JP2024041854A - Reverse connection damage prevention circuit - Google Patents

Abstract

An object of the present invention is to provide a reverse connection damage prevention circuit that does not require a separate circuit for detecting the voltage of an input power source and has low voltage drop and power loss.
[Solution] A reverse connection damage prevention circuit A includes a first electric path 11 connected to a power source at one end and a load 30 connected to the other end; A second electrical path 12 is connected, a third electrical path 13 is connected at one end to the first electrical circuit 11 and the other end is connected to the FET 21; A fifth electric line 15 connected to the electric line 12 has one end connected to the third electric line 13, is electrically connected to and intersects with the fifth electric line 15 in the middle, and the other end is connected to the second electric line 12. On the second electrical path 12, a FET 21 is provided, on the third electrical path 13, a first resistor is provided, and on the fifth electrical path 15, a diode 23, a second resistor 24, a constant A voltage diode 25 is provided, and on the sixth electric path 16, a third resistor 26 is provided.
[Selection diagram] Figure 1

Description

The present invention relates to a reverse connection damage prevention circuit that prevents damage to a load and protects the load when the polarity of an input power source is reversed.

Since the input power source that supplies power to a load such as a DC power distribution LED lighting device has polarity, there is a risk that the load will be damaged if the input power source is reversely connected.

Therefore, in order to prevent damage to the load and protect the load when the polarity of the input power supply is connected in reverse, the voltage of the input power supply is detected, and if it is appropriate, it is turned ON (= conduction of the electric circuit). A configuration is disclosed in which a voltage detection circuit using a comparator or the like is provided, or if it is inappropriate, turns it off (=cuts off the electric path).

Further, a configuration is disclosed in which a diode is provided in series with the electric path so that no current flows when the polarity of the input power source is reversed.

For example, Patent Document 1 discloses, as a prior art, a configuration in which a diode and an electric circuit to be protected are connected in series between a positive power terminal and a negative power terminal. In this configuration, when the power supplies are reversely connected and the potential of the negative power terminal is higher than the potential of the positive power terminal, the diode blocks current flow.

Japanese Patent Application Publication No. 2001-314032

However, in the case of a configuration in which a voltage detection circuit is provided, it is necessary to configure a separate circuit for voltage detection, which is inconvenient.

Further, in the case of a configuration in which a diode is provided in series with the electric path, a typical PN junction diode causes a voltage drop and power loss of about 0.6 (V) due to the voltage drop VF. When the amount of current flowing in the circuit is large or the voltage is large, a voltage drop and power loss of about 0.6 (V) does not pose much of a problem. However, if the amount of current flowing in the circuit is small or the voltage is small, even if it is about 0.6 (V), it will result in a large loss and become a problem.

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention aims to provide a reverse connection damage prevention circuit that eliminates the need to configure a separate circuit for detecting the voltage of the input power source and has low voltage drop and power loss. This is the purpose.

The invention of claim 1 is:
A reverse connection damage prevention circuit that prevents damage to a load due to reverse connection of a power supply,
a first electric path to which the positive electrode of the power source is connected to one end and one end of the load is connected to the other end;
a second electric path having one end connected to the negative electrode of the power source and the other end connected to the other end of the load;
a third electric path whose one end is connected to the first electric path and whose other end is connected to the gate of the field effect transistor;
a fifth electric path, one end of which is connected to the first electric path at a location farther from the one end of the first electric path than one end of the third electric path, and the other end of which is connected to the second electric path;
a sixth electric path, one end of which is connected to the third electric path, electrically connected to and intersects with the fifth electric path in the middle, and the other end of which is connected to the second electric path;
On the second electric circuit, the field effect transistor is provided by connecting a drain to the negative electrode side of the power source and connecting a source to the other end side of the load,
On the third electrical circuit, a first resistor is provided at a location closer to the one end connected to the first electrical circuit than at a location where it is connected to the sixth electrical circuit,
On the fifth electrical circuit, in the order of proximity to the one end connected to the first electrical circuit, a diode with the cathode on the first electrical circuit side, a second resistor, and a constant voltage diode with the cathode on the first electrical circuit side. provided,
On the sixth electric path, a third resistor is provided at a location closer to the other end connected to the second electric path than at a point where it intersects with the fifth electric path, to provide a reverse connection damage prevention circuit.

By applying and using the reverse connection damage prevention circuit according to the present invention, damage to a load such as an LED lighting device for DC power distribution due to reverse connection of an input power source can be prevented and the load can be protected.

In addition, there is no need to configure a separate circuit for detecting the voltage of the input power supply in order to detect whether the polarity of the input power supply is properly connected. This is convenient because it can prevent damage to the load due to reverse connection of the input power supply and protect the load.

In addition, the reverse connection damage prevention circuit according to the present invention has a voltage drop and a lower voltage drop compared to a configuration in which a diode is provided in series in the electric circuit to prevent current from flowing in the circuit when the polarity of the input power source is reversed. This configuration minimizes power loss. Particularly when the amount of current flowing in the circuit is small or when the voltage is small, the advantage of minimizing this voltage drop and power loss is significant.

1 is a configuration diagram of a reverse connection damage prevention circuit according to Embodiment 1 of the present invention. FIG. 1 is a conceptual configuration diagram of a field effect transistor according to a reverse connection damage prevention circuit according to Embodiment 1 of the present invention; FIG. FIG. 3 is an explanatory diagram showing the operation of the field effect transistor according to the reverse connection damage prevention circuit of Embodiment 1 of the present invention. FIG. 3 is an explanatory diagram showing the operation of the field effect transistor according to the reverse connection damage prevention circuit of Embodiment 1 of the present invention. FIG. 2 is an explanatory diagram showing the operation of the reverse connection damage prevention circuit according to Embodiment 1 of the present invention. FIG. 3 is an explanatory diagram showing the operation of the field effect transistor according to the reverse connection damage prevention circuit of Embodiment 1 of the present invention. FIG. 2 is an explanatory diagram showing the operation of the reverse connection damage prevention circuit according to Embodiment 1 of the present invention. FIG. 7 is a configuration diagram of a reverse connection damage prevention circuit according to another embodiment of the present invention.

(Embodiment 1)
First, the configuration of a reverse connection damage prevention circuit A according to Embodiment 1 of the present invention will be explained based on FIG. 1. If a DC input power source is connected to a load such as an LED lighting device for DC power distribution with the polarity reversed by mistake, the load may be damaged. Therefore, the reverse connection damage prevention circuit A of the first embodiment of the present invention is a protection circuit that prevents damage to the load and protects the load even when a DC input power source is connected with the polarity reversed. It is.

As shown in FIG. 1, one end of the first electric path 11 is connected to a positive electrode of a DC input power source (not shown), and the other end is connected to one end of a load 30. One end of the second electric path 12 is connected to the negative pole of the DC input power source, and the other end is connected to the other end of the load 30. One end of the third electric path 13 is connected to the first electric path 11, and the other end is connected to the gate (G) of a field effect transistor (FET) 21.

One end of the fifth electric line 15 is connected to the first electric line 11 at a location farther from one end of the first electric line 11 than one end of the third electric line 13, and the other end is connected to the second electric line 12. One end of the sixth electric path 16 is connected to the third electric path 13 , electrically connected to and intersects with the fifth electric path 15 on the way, and the other end is connected to the second electric path 12 .

On the second electric path 12, the drain (D) is connected to one end to which the negative electrode of the input power source is connected, and the source (S) is connected to the other end to which the other end of the load 30 is connected. An effect transistor (FET) 21 is provided.

On the third electric path 13 , the first resistor 22 is provided at a position closer to one end connected to the first electric path 11 than the connection point with the sixth electric path 16 . Note that the resistance value of the first resistor 22 is, for example, 1M (Ω).

On the fifth electric path 15, in order of proximity to the connection point of the first electric path 11, a diode 23 with the first electric path 11 side as the cathode (K), a second resistor 24, and a cathode (K) on the first electric path 11 side. A constant voltage diode 25 is provided. Note that the resistance value of the second resistor 24 is, for example, 10 (Ω). Further, a voltage regulator diode normally outputs a constant voltage when a predetermined voltage is applied in the opposite direction to the pn junction. The constant voltage diode 25 outputs a constant voltage of 10 (V) or 20 (V).

On the sixth electric line 16, a third resistor 26 is provided at a position closer to the other end connected to the second electric line 12 than the intersection with the fifth electric line 15. Note that the resistance value of the third resistor 26 is, for example, 1M (Ω).

Also, the field effect transistor (FET) 21 will be explained. The field effect transistor (FET) 21 in the first embodiment is an n-channel MOS-FET (insulated gate field effect transistor).

As shown in FIG. 2, a field effect transistor (FET) 21 is generally configured by joining a p-type semiconductor 211 and an n-type semiconductor 212. The field effect transistor (FET) 21 has three electrodes: a drain (D), a source (S), and a gate (G). The drain (D) and source (S) are each connected to an n-type semiconductor 212. Further, the source (S) is connected not only to the n-type semiconductor 212 but also to the p-type semiconductor 211. The gate (G) is made of metal, for example, and is connected to the p-type semiconductor 211 via an oxide insulating film 213.

A voltage with drain (D) + polarity (positive polarity) is applied between the drain (D) and source (S), and a voltage with gate (G) + polarity (positive polarity) is applied between the gate (G) and source (S). Apply voltage with polarity). Then, as shown in FIG. 3, electrons are attracted to the p-type semiconductor 211 (inversion layer 214) directly under the oxide insulating film 213, and the p-type semiconductor 211 changes (inverts) to an n-type semiconductor. Then, a current flows from the drain (D) to the source (S).

By the way, as described above, the field effect transistor (FET) 21 is configured by joining a p-type semiconductor 211 and an n-type semiconductor 212. Further, the source (S) is connected not only to the n-type semiconductor 212 but also to the p-type semiconductor 211. Therefore, when a voltage is applied between the drain (D) and the source (S) with source (S) + polarity (positive polarity), a current flows from the source (S) to the drain (D) as shown in Figure 4. . This is because a field effect transistor (FET) has a body diode (parasitic diode) formed between the drain (D) and source (S) due to the structure where a p-type semiconductor and an n-type semiconductor are connected. This is due to the function of

<Operation of reverse connection damage prevention circuit A (in case of forward connection)>
Next, the operation of the reverse connection damage prevention circuit A according to the first embodiment of the present invention will be described. As shown in FIG. 5, when the input power source is sequentially connected to the reverse connection damage prevention circuit A, a current flows through the path of "first electric circuit 11→load 30→second electric circuit 12." Note that in the field effect transistor (FET) 21 on the second electric path 12, a current flows from "source (S) to drain (D)". This will be explained in detail below.

Since the resistance value of the first resistor 22 is as large as 1M (Ω), a small amount of current flows through the third electric path 13. The current that has flowed through the path of "third electric path 13 → sixth electric path 16" flows into the second electric path 12, and due to the function of the body diode of the field effect transistor (FET) 21 on the same electric path, the current flows through the source (S) and drain. (D) Flows between. Further, the current flowing through the path "third electric path 13→sixth electric path 16" causes the constant voltage diode 25 to output a constant voltage (for example, 10V).

Note that the first resistor 22 plays a role of adjusting the amount of current flowing through the constant voltage diode 25 in order to cause the constant voltage diode 25 to output a constant voltage. Furthermore, the current that has flowed through the path of "third electric path 13→sixth electric path 16" tries to flow to the third resistor 26, but since the resistance value of the third resistor 26 is large, the current that flows is small. Therefore, most of the current flowing through the path “third electric path 13→sixth electric path 16” flows to the constant voltage diode 25.

Further, although the current flowing on the third electric path 13 flows to the sixth current path 16, some of the current flows directly on the third electric path 13. As a result, charges accumulate at the gate (G) of the field effect transistor (FET) 21.

When charges are accumulated on the gate (G) of the field effect transistor (FET) 21 and a voltage of + polarity (positive polarity) is applied, the p-type semiconductor 211 (inversion layer 214) directly under the oxide insulating film 213 becomes an n-type semiconductor. The field effect transistor (FET) 21 turns on. When the field effect transistor (FET) 21 turns on, it becomes a mere resistance (R), and current flows in either direction. Currently, as shown in FIG. 6, a voltage is applied with source (S) + polarity (positive polarity), so a current flows from "source (S) to drain (D)."

In this case, the field effect transistor (FET) 21 is on, so the resistance value is low and there is almost no voltage drop. Therefore, due to the function of the body diode, current does not flow from the p-type semiconductor 211 to the n-type semiconductor 212 in the field-effect transistor (FET) 21, but instead flows from the source (S) to the n-type semiconductor connected to the source (S). A current flows through the n-type semiconductor 212 → the inversion layer 214 (n-type semiconductor) → the n-type semiconductor 212 connected to the drain (D) → the drain (D).

When the input power source and the reverse connection damage prevention circuit A are disconnected, the electric charge accumulated in the gate (G) of the field effect transistor (FET) 21 is transferred to the second resistor 24 with a small resistance value and the reverse connection damage prevention circuit A. It is quickly consumed (discharged) by the diode 23 and the load 30. Note that when the load 30 is not connected to the reverse connection damage prevention circuit A, the power is consumed (discharged) by the "third resistor 26". However, since the resistance value of the third resistor 26 is large, the consumption (discharge) time becomes long.

By the way, since the fifth electric path 15 is provided with a diode 23 whose cathode (K) is on the first electric path 11 side, the current flowing on the first electric path 11 does not flow on the fifth electric path 15. .

<Operation of reverse connection damage prevention circuit A (in case of reverse connection)>
Next, as shown in FIG. 7, when the input power source is reversely connected to the reverse connection damage prevention circuit A, in the field effect transistor (FET) 21 on the second electric path 12, the drain (D) and source (S) A voltage is applied to the drain (D) + polarity (positive polarity). However, when the drain (D) is used as a reference, the gate (G) has - polarity (minus polarity), so the p-type semiconductor 211 directly under the oxide insulating film 213 does not change into an n-type semiconductor (does not invert). ), no current flows between the drain (D) and source (S) in the field effect transistor (FET) 21 on the second electric path 12. Therefore, no current flows to the load 30 either.

In addition, the field effect transistor (FET) 21 on the second electric path 12 is in the ON state (= the p-type semiconductor 211 directly under the oxide insulating film 213 changes to an n-type semiconductor, and the , current is flowing), the drain (D) and source (S) of the field effect transistor (FET) 21 on the second electric path 12, such as when the input power source is reversely connected to the reverse connection damage prevention circuit A. Even if a current flows between them, the constant voltage diode 25 is provided on the fifth electric path 15 and the third resistor 26 is provided on the sixth electric path 26, so that the field effect transistor (FET) The charge directed toward the gate (G) of 21 is consumed, thereby preventing the gate (G) from turning on (=changing the p-type semiconductor 211 directly under the oxide insulating film 213 into an n-type semiconductor). Furthermore, the charge remaining at the gate (G) of the field effect transistor (FET) 21 is consumed by the "second resistor 24 with a small resistance value", "diode 23", and "load 30 (or input power supply)". (discharge). In particular, by providing the second resistor 24 and the diode 23 with a small resistance value on the fifth electric path 15, the consumption of electric charges is promoted.

By configuring the reverse connection damage prevention circuit A of Embodiment 1 of the present invention in this way, damage to the load such as an LED lighting device for DC power distribution due to reverse connection of the input power source can be prevented and the load can be protected. be able to.

In addition, there is no need to configure a separate circuit for detecting the voltage of the input power supply in order to detect whether the polarity of the input power supply is properly connected. This is convenient because it can prevent damage to the load due to reverse connection of the input power supply and protect the load.

Further, according to the reverse connection damage prevention circuit A according to the present invention, compared to a configuration in which a diode is provided in series in the electric circuit so that current does not flow in the circuit when the polarity of the input power source is reversed, This configuration minimizes voltage drop and power loss. Particularly when the amount of current flowing in the circuit is small or when the voltage is small, the advantage of minimizing this voltage drop and power loss is significant.

<Modified example>
Although the configuration of the reverse connection damage prevention circuit A according to the first embodiment of the present invention has been described above, the configuration is not limited to this configuration. For example, as shown in FIG. 8, the reverse connection damage prevention circuit B according to the present invention may be configured with the minimum necessary elements.

The reverse connection damage prevention circuit B includes a first electrical circuit 11 to which the positive pole of a DC input power source is connected to one end and one end of the load 30 to the other end, and a first electrical circuit 11 to which the negative pole of the power source is connected to one end and the load to the other end. 30 is connected to the second electric path 12, and one end is connected to the first electric path 11, and the other end is connected to the gate (G) of a field effect transistor (FET) 21. ing.

Further, a fourth electric path 14 is provided, one end of which is connected to the third electric path 13 and the other end of which is connected to the second electric path 12 . Note that one end of the fourth electric path 14 is connected to the third electric path 13 at a location between the first resistor 22 and the field effect transistor (FET) 21 on the third electric path 13 .

On the fourth electric path 14, a constant voltage diode 25 is provided with the first electric path side as a cathode (K).

When the input power source is sequentially connected to the reverse connection damage prevention circuit B, a current flows through the path of "first electric circuit 11 → load 30 → second electric circuit 12". As described above, in the field effect transistor (FET) 21 on the second electric path 12, a current flows from "source (S) to drain (D)" due to the function of the body diode (parasitic diode).

When charge accumulates on the gate (G) of the field effect transistor (FET) 21, the field effect transistor (FET) 21 turns on, and the p-type semiconductor 211 (inversion layer 214) directly under the oxide insulating film 213 becomes an n-type semiconductor. change to (reverse). Then, the "source (S) of the field effect transistor (FET) 21 → n-type semiconductor 212 connected to the source (S) → inversion layer 214 (n-type semiconductor) → n-type connected to the drain (D) A current flows from the semiconductor 212 to the drain (D).

Next, when the input power source is reversely connected to the reverse connection damage prevention circuit B, in the field effect transistor (FET) 21 on the second electric path 12, between the drain (D) and the source (S), the drain (D) + A voltage will be applied with polarity (positive polarity). However, if the drain (D) is used as a reference, the gate (G) has - polarity (minus polarity), so the p-type semiconductor 211 directly under the oxide insulating film 213 does not change into an n-type semiconductor (does not invert). ), no current flows between the drain (D) and source (S) in the field effect transistor (FET) 21 on the second electric path 12. Therefore, no current flows to the load 30 either.

Although preferred embodiments of the present invention have been described above, the reverse connection damage prevention circuit according to the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the present invention. Needless to say, it is possible.

11: first electric path, 12: second electric path, 13: third electric path, 14: fourth electric path, 15: fifth electric path, 16: sixth electric path,
21: Field effect transistor (FET), 211: P-type semiconductor, 212: N-type semiconductor, 213: Oxide insulating film, 214: Inversion layer, 22: First resistor, 23: Diode, 24: Second resistor, 25: Constant voltage diode, 26: third resistor,
30: Load

Claims (1)

A reverse connection damage prevention circuit that prevents damage to a load due to reverse connection of a power supply,
a first electric path to which the positive electrode of the power source is connected to one end and one end of the load is connected to the other end;
a second electric path having one end connected to the negative electrode of the power source and the other end connected to the other end of the load;
a third electric path whose one end is connected to the first electric path and whose other end is connected to the gate of the field effect transistor;
a fifth electric path, one end of which is connected to the first electric path at a location farther from the one end of the first electric path than one end of the third electric path, and the other end of which is connected to the second electric path;
a sixth electric path, one end of which is connected to the third electric path, electrically connected to and intersects with the fifth electric path in the middle, and the other end of which is connected to the second electric path;
On the second electric circuit, the field effect transistor is provided by connecting a drain to the negative electrode side of the power source and connecting a source to the other end side of the load,
On the third electrical circuit, a first resistor is provided at a location closer to the one end connected to the first electrical circuit than at a location where it is connected to the sixth electrical circuit,
On the fifth electrical circuit, in the order of proximity to the one end connected to the first electrical circuit, a diode with the cathode on the first electrical circuit side, a second resistor, and a constant voltage diode with the cathode on the first electrical circuit side. provided,
Reverse connection damage, characterized in that a third resistor is provided on the sixth electric path at a location closer to the other end connected to the second electric path than at a point where it intersects with the fifth electric path. prevention circuit.

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