JP2023142322A - Non-polar circuit in direct-current power distribution system - Google Patents

Abstract

To provide a non-polar circuit with restricted loss due to a voltage drop.SOLUTION: A non-polar circuit in a direct-current power distribution system comprises a first cable way 31 and a third cable way 33 having one end connected with a power source 1 and the other end connected with a load 2, a first LED 4 is provided on the first cable way 31 and the third cable way 33, a second LED 5 is provided in parallel to the first LED 4, a first FETNch 61 is provided in series at a position where the voltage is lower than the first LED 4 on the first cable way 13, a source of a second FETPch 71 is connected with the first cable way 31 at a position where the voltage is lower than the first LED 4, a drain of a second FETPch 71 is connected with the third cable way 33 at a position where the voltage is lower than the load 2, a fourth FETPch 91 is provided in series at a position where the voltage is lower than the load on the third cable way 33, a source of a third FETNch 81 is connected with the third cable way 33 at a position where the voltage is higher than the first LED 4 and a drain of the third FETNch 81 is connected with the first cable way 31 at a position where the voltage is higher than the load 2.SELECTED DRAWING: Figure 1

Description

The present invention relates to a non-polar circuit that operates even when the polarities of the power supplies are connected in the forward direction or in the reverse direction.

Since a power supply that supplies power to a load such as a DC power distribution LED lighting device has polarity, there is a risk that the load will be damaged if the power supply is reversely connected.

Therefore, in order to prevent damage to the load and protect the load when the polarity of the power supply is reversed, it is conventional to detect the voltage of the power supply and, if appropriate, turn it on (=conduct the electric circuit). Alternatively, a configuration is disclosed in which a voltage detection circuit using a comparator or the like is provided, which turns off (=cuts off the electric circuit) if it is inappropriate.

Further, a configuration is disclosed in which a diode is provided in series with the electric path so that no current flows even when the polarity of the power source is reversed.

For example, Patent Document 1 discloses, as a prior art, a configuration in which a diode and an electric circuit to be protected are connected in series between a positive power terminal and a negative power terminal. In this configuration, when the power supplies are reversely connected and the potential of the negative power terminal is higher than the potential of the positive power terminal, the diode blocks current flow.

Japanese Patent Application Publication No. 2001-314032

However, in the case of a configuration in which a voltage detection circuit is provided, it is necessary to configure a separate circuit for voltage detection, which is inconvenient.

Further, in the case of a configuration in which a diode is provided in series with the electric path, a typical PN junction diode causes a voltage drop and power loss of about 0.6 (V) due to the voltage drop _VF . When the amount of current flowing in the circuit is large or the voltage is large, a voltage drop and power loss of about 0.6 (V) does not pose much of a problem. However, if the amount of current flowing in the circuit is small or the voltage is small, even if it is about 0.6 (V), it will result in a large loss and become a problem.

By the way, as a measure to prevent damage to the load when the power supply is connected in reverse, it is necessary to create a non-polar circuit so that the circuit will operate even if the power supply polarity is connected in the forward or reverse direction. There is also a strategy. For non-polarization, a configuration in which a diode bridge is provided in the circuit is known.

However, in the case of a configuration in which a diode bridge is provided in the circuit, a loss due to the voltage drop V _F (2 V _F ) due to the diode will occur, and the heat treatment must be considered and dealt with.

SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, it is an object of the present invention to provide a non-polar circuit that suppresses loss due to voltage drop.

The invention of claim 1 is:
It is a non-polar circuit that operates even if the power supply is connected in the forward or reverse direction.
a first electric path to which the positive pole of the power supply is connected to one end and one end of the load is connected to the other end;
a third electrical path, one end of which is connected to the negative electrode of the power supply, and the other end of which is connected to the other end of the load;
A first semiconductor light-emitting element is provided in series on the first electric circuit with a cathode facing in a lower voltage direction,
The first semiconductor light-emitting devices are arranged in series on the third electric current so that the anodes thereof are directed in the direction of lower voltage.
A second semiconductor light emitting element is provided in parallel with the first semiconductor light emitting element in a direction opposite to that of the first semiconductor light emitting element,
A first field effect transistor Nch is provided in series at a position on the first conductor at a lower voltage than the first semiconductor light emitting element, with a drain connected in a lower voltage direction and a source connected in a higher voltage direction. ,
The source of the second field effect transistor Pch is connected to the first electric path at a position where the voltage is lower than that of the first semiconductor light emitting element,
The drain of the second field effect transistor Pch is connected to the third electric path at a position where the voltage is lower than the load,
The gates of the first field effect transistor Nch and the second field effect transistor Pch are connected to the first electric path at a position where the voltage is higher than that of the first semiconductor light emitting element,
A fourth field effect transistor Pch is provided in series at a position on the third electric circuit at a lower voltage than the load, with a drain connected to an upper voltage direction and a source connected to a lower voltage direction,
A source of the third field effect transistor Nch is connected to the third electric path at a position where the voltage is higher than that of the first semiconductor light emitting element,
The drain of the third field effect transistor Nch is connected to the first electric path at a position where the voltage is higher than the load,
The gates of the third field effect transistor Nch and the fourth field effect transistor Pch are nonpolar circuits connected to the third electric path at a position where the voltage is lower than that of the first semiconductor light emitting element.

Moreover, the invention of claim 2 is:
It is a non-polar circuit that operates even if the power supply is connected in the forward or reverse direction.
a first electric path to which the positive pole of the power supply is connected to one end and one end of the load is connected to the other end;
a third electrical path, one end of which is connected to the negative electrode of the power supply, and the other end of which is connected to the other end of the load;
A first semiconductor light-emitting element is provided in series on the first electric circuit with a cathode facing in a lower voltage direction,
The first semiconductor light-emitting devices are arranged in series on the third electric current so that the anodes thereof are directed in the direction of lower voltage.
A second semiconductor light emitting element is provided in parallel with the first semiconductor light emitting element in a direction opposite to that of the first semiconductor light emitting element,
A first field effect transistor Nch is provided in series at a position on the first conductor at a lower voltage than the first semiconductor light emitting element, with a drain connected in a lower voltage direction and a source connected in a higher voltage direction. ,
The gate of the first field effect transistor Nch is connected to the first electric path at a position where the voltage is higher than that of the first semiconductor light emitting element,
A drain of the second field effect transistor Nch is connected to the first electric path at a position where the voltage is lower than that of the first semiconductor light emitting element,
The source of the second field effect transistor Nch is connected to the third electric path through a second electric path at a position where the voltage is lower than that of the load,
The gate of the second field effect transistor Nch is connected to the second electric path through a fifth electric path,
The fifth electric path is connected to the third electric path at a position where the voltage is higher than the first semiconductor light emitting element and at a position where the voltage is lower than the drain of the third field effect transistor Nch,
Constant voltage semiconductor elements are provided in series on the fifth electric circuit so that the anode faces in the direction of the second electric circuit,
The third field effect transistor Nch is provided in series at a position on the third electric circuit at a lower voltage than the load, with a source connected to an upper voltage direction and a drain connected to a lower voltage direction,
The gate of the third field effect transistor Nch is connected to the third electric path through a fourth electric path,
The fourth electric path is connected to the first electric path at a position where the voltage is lower than the first semiconductor light emitting element and at a position where the voltage is higher than the source of the first field effect transistor Nch,
Constant voltage semiconductor elements are provided in series on the fourth electrical circuit so that the anode faces in the direction of the third electrical circuit,
The source of the fourth field effect transistor Nch is connected to the third electric path at a position where the voltage is higher than that of the first semiconductor light emitting element,
The drain of the fourth field effect transistor Nch is connected to the first electric path at a position where the voltage is higher than the load,
The gate of the fourth field effect transistor Nch is a non-polar circuit connected to the third electric path at a position where the voltage is lower than that of the first semiconductor light emitting element.

By applying and using the non-polar circuit according to the present invention, there is no need to pay attention to polarity when connecting a power source, which is convenient.

By using a configuration in which a field effect transistor (FET) is provided in the circuit instead of a configuration in which a diode bridge is provided in the circuit, voltage drop and power loss can be minimized.

In order to turn a field effect transistor "ON", the potential at the gate must be higher than the potential at the source. In the non-polar circuit according to the present invention, the source potential is lowered by using the forward voltage (V _F ) and the voltage drop of the semiconductor light emitting device, so that the load connected to the non-polar circuit is lowered by the voltage drop of the semiconductor light emitting device. In the case of substrates, efficiency is good.

1 is a configuration diagram of a non-polar circuit according to Embodiment 1 of the present invention. FIG. 1 is a conceptual configuration diagram of a field effect transistor according to a non-polar circuit according to Embodiment 1 of the present invention; FIG. FIG. 2 is an explanatory diagram showing the operation of a field effect transistor according to a non-polar circuit according to Embodiment 1 of the present invention. FIG. 2 is an explanatory diagram showing the operation of a field effect transistor according to a non-polar circuit according to Embodiment 1 of the present invention. FIG. 3 is an explanatory diagram showing the operation of the non-polar circuit according to the first embodiment of the present invention. FIG. 3 is an explanatory diagram showing the operation of the non-polar circuit according to the first embodiment of the present invention. FIG. 2 is a configuration diagram of a non-polar circuit according to a second embodiment of the present invention. FIG. 7 is an explanatory diagram showing the operation of a non-polar circuit according to Embodiment 2 of the present invention. FIG. 7 is an explanatory diagram showing the operation of a non-polar circuit according to Embodiment 2 of the present invention.

(Embodiment 1)
First, the configuration of a non-polar circuit A according to Embodiment 1 of the present invention will be explained based on FIG. 1. The non-polar circuit A is a circuit that operates even when the polarities of the power supplies are connected in the forward direction or in the reverse direction.

<Configuration of non-polar circuit A>
As shown in FIG. 1, the non-polar circuit A includes a first electrical path 31 to which the positive pole of the DC power source 1 is connected to one end, one end of the load 2 to the other end, and a negative pole of the power source 1 to one end. and has a third electric path 33 to which the other end of the load 2 is connected. Note that FIG. 1 shows a case where the polarities of the power supply 1 are connected in order, and the arrangement of each element will also be explained based on this.

On the first electric path 31, first semiconductor light emitting elements (LEDs) 4 are provided in series so that the cathodes (indicated by "K" in FIG. 1) are directed toward the lower voltage direction. Further, the first semiconductor light emitting elements 4 are provided in series on the third electric path 33 so that the anodes (indicated by "A" in FIG. 1) face in the lower voltage direction. In addition, second semiconductor light emitting devices (LEDs) are arranged in parallel with the first semiconductor light emitting devices 4 on the first electrical path 31 and the third electrical path 33, respectively, so that the direction is opposite to that of the first semiconductor light emitting device 4. 5 is provided.

A first field effect transistor Nch (N channel) 61 is located at a lower voltage position than the first semiconductor light emitting element 4 on the first electric path 31, and has a drain (indicated as "D" in FIG. 1) in the lower voltage direction. ) are connected, and a source (indicated by "S" in FIG. 1) is connected in the upward direction of the voltage.

The source of the second field effect transistor Pch (P channel) 71 is connected to the first electric path 31 at a lower voltage than the first semiconductor light emitting element 4, and the drain of the second field effect transistor Pch71 is connected to the first electric path 31 at a lower voltage than the load 2. It is connected to the third electric path 33 at the position.

The gates of the first field effect transistor Nch61 and the second field effect transistor Pch71 (indicated by "G" in FIG. 1) are connected to the first electric path 31 at a position where the voltage is higher than that of the first semiconductor light emitting element 4. ing.

A fourth field effect transistor Pch91 is provided in series at a position on the third electric path 33 where the voltage is lower than the load 2, with the drain connected to the higher voltage direction and the source connected to the lower voltage direction.

The source of the third field effect transistor Nch81 is connected to the third electric path 33 at a position where the voltage is higher than that of the first semiconductor light emitting element 4, and the drain of the third field effect transistor Nch81 is connected to the third electric path 33 at a position where the voltage is higher than the load 2. It is connected to the electric line 31.

The gates of the third field effect transistor Nch81 and the fourth field effect transistor Pch91 are connected to the third electric path 33 at a position where the voltage is lower than that of the first semiconductor light emitting element 4.

<Current flow in field effect transistor>
Next, the flow of current in the first to fourth field effect transistors will be explained. In the first embodiment, the first field effect transistor Nch61 and the third field effect transistor Nch81 are n-channel MOS-FETs (insulated gate field effect transistors). Further, the second field effect transistor Pch71 and the third field effect transistor Pch91 are p-channel MOS-FETs. In the following, the flow of current in a field effect transistor will be explained using the first field effect transistor Nch61, which is an n-channel MOS-FET, as an example. Note that the third field effect transistor Nch81 has the same configuration as the first field effect transistor Nch61, so a description thereof will be omitted.

As shown in FIG. 2, the first field effect transistor Nch 61 is generally configured by joining a p-type semiconductor 611 and an n-type semiconductor 612. Specifically, between the source (S) and the drain (D), it is configured by connecting "n-type semiconductor 612→p-type semiconductor 611→n-type semiconductor 612". The first field effect transistor Nch61 has three electrodes: a drain (D), a source (S), and a gate (G). The drain (D) and source (S) are each connected to an n-type semiconductor 612. Further, the source (S) is connected not only to the n-type semiconductor 612 but also to the p-type semiconductor 611. The gate (G) is made of metal, for example, and is connected to the p-type semiconductor 611 via an oxide insulating film 613.

A voltage with drain (D) + polarity (positive polarity) is applied between the drain (D) and source (S), and a voltage with gate (G) + polarity (positive polarity) is applied between the gate (G) and source (S). Apply voltage with polarity). Then, as shown in FIG. 3, electrons are attracted to the p-type semiconductor 611 (inversion layer 614) directly under the oxide insulating film 613, and the p-type semiconductor 611 changes (inverts) to an n-type semiconductor. Then, current flows from the drain (D) to the source (S).

On the other hand, in the second field effect transistor Pch71 and the fourth field effect transistor Pch91, which are p-channel MOS-FETs, the relationship between the source (S) and the drain (D) is "p-type semiconductor → n-type semiconductor → p-type semiconductor". It is constructed by joining. A voltage with source (S) + polarity (positive polarity) is applied between the drain (D) and source (S), and a voltage with gate (G) - polarity (negative polarity) is applied between the gate (G) and source (S). When a voltage is applied depending on the polarity (polarity), a current flows from the source (S) to the drain (D).

By the way, as described above, the first field effect transistor Nch61 is configured by joining a p-type semiconductor 611 and an n-type semiconductor 612. Further, the source (S) is connected not only to the n-type semiconductor 612 but also to the p-type semiconductor 611. Therefore, when a voltage is applied between the drain (D) and the source (S) with source (S) + polarity (positive polarity), a current flows from the source (S) to the drain (D) as shown in Figure 4. . This is because a field effect transistor (FET) has a body diode (parasitic diode) formed between the drain (D) and source (S) due to the structure where a p-type semiconductor and an n-type semiconductor are connected. This is due to the function of

On the other hand, in the second field effect transistor Pch71 and the fourth field effect transistor Pch91, which are p-channel MOS-FETs, a voltage is applied between the drain (D) and the source (S) with the drain (D) + polarity (positive polarity). Then, current flows from the drain (D) to the source (S) due to the action of the body diode.

<Operation of non-polar circuit A (in case of forward connection)>
Next, the operation of the non-polar circuit A according to the first embodiment of the present invention will be explained. As shown in FIG. 5, when the power supply 1 is connected to the non-polar circuit A in order, "power supply 1 → first semiconductor light emitting element 4 on the first electric path 31 → first field effect transistor Nch 61 → load 2 → fourth electric field A current flows through the path of "effect transistor Pch91→second semiconductor light emitting element 5→power supply 1".

In addition, in the first field effect transistor Nch 61, since a voltage is applied between the drain (D) and the source (S) by the power source 1 with source (S) + polarity (positive polarity), by the flickering of the body diode, Current flows from the source (S) to the drain (D).

In addition, in the fourth field effect transistor Pch91, a voltage is applied between the drain (D) and the source (S) by the power supply 1 with the drain (D) + polarity (positive polarity), so that by the flickering of the body diode, Current flows from the drain (D) to the source (S).

<Operation of non-polar circuit A (in case of reverse connection)>
Next, as shown in FIG. 6, when the power supply 1 is reversely connected to the non-polar circuit A, "power supply 1 → first semiconductor light emitting element 4 on the third electric path 33 → third field effect transistor Nch 81 → load 2 → A current flows through a path of "second field effect transistor Pch71→second semiconductor light emitting element 5→power supply 1".

In addition, in the third field effect transistor Nch81, since a voltage is applied between the drain (D) and the source (S) by the power supply 1 with the source (S) + polarity (positive polarity), by the flickering of the body diode, Current flows from the source (S) to the drain (D).

In addition, in the second field effect transistor Pch71, a voltage is applied between the drain (D) and the source (S) by the power supply 1 with the drain (D) + polarity (positive polarity), so that by the flickering of the body diode, Current flows from the drain (D) to the source (S).

Note that, as described above, when the polarities of the power supply 1 are connected in order, the gate of the first field effect transistor Nch 61 (indicated by "G" in FIG. 1) is connected to the first semiconductor light emitting device on the first electric path 31. It is connected to the first electric path 31 at a position where the voltage is higher than that of the element 4. Further, the gate of the fourth field effect transistor Pch91 is connected to the third electric path 33 at a position where the voltage is lower than that of the first semiconductor light emitting element 4 on the third electric path 33. Further, when the polarity of the power source 1 is reversely connected, the gate of the third field effect transistor Nch81 is connected to the third electric path 33 at a position where the voltage is higher than that of the first semiconductor light emitting element 4. Further, the gate of the second field effect transistor Pch71 is connected to the first electric path 31 at a position where the voltage is lower than that of the first semiconductor light emitting element 4 on the first electric path 31. That is, when the power supply 1 applies a voltage, the gate of the first field effect transistor Nch61 or the gate of the third field effect transistor Nch81 is closer to the first semiconductor light emitting element 4 and the second semiconductor light emitting element 5 than the corresponding source. The potential increases by the voltage drop. On the other hand, the gate of the second field effect transistor Pch71 or the gate of the fourth field effect transistor Pch91 has a lower potential than the corresponding source by the voltage drop of the first semiconductor light emitting element 4 and the second semiconductor light emitting element 5. Become. Therefore, when the power supplies 1 are sequentially connected, the first field effect transistor Nch61 and the fourth field effect transistor Pch91 are turned "ON", and conduction occurs between the drain (D) and the source (S). Further, when the power supply 1 is reversely connected, the second field effect transistor Pch71 and the third field effect transistor Nch81 are turned "ON", and conduction occurs between the drain (D) and the source (S).

By configuring the non-polar circuit A of Embodiment 1 of the present invention in this manner, there is no need to pay attention to the polarity when connecting the power source 1, which is convenient.

In addition, voltage drop and power loss can be minimized by using a configuration in which a field effect transistor is provided in the circuit instead of a configuration in which a diode bridge is provided in the circuit.

Furthermore, in order to turn on the field effect transistor and establish conduction between the drain (D) and source (S), the gate potential must be higher than the source potential. In the non-polar circuit A according to the first embodiment, the forward voltage (V _F ) and the voltage drop of the first semiconductor light emitting element 4 and the second semiconductor light emitting element 5 are used to lower the potential of the source. Therefore, when the load 2 connected to the non-polar circuit A is a substrate of a semiconductor light emitting device, efficiency is good.

(Embodiment 2)
Although the non-polar circuit A of the first embodiment of the present invention described above has a configuration using an Nch field effect transistor and a Pch field effect transistor, the present invention is not limited to this configuration. In Embodiment 2 of the present invention below, a non-polar circuit B configured using only Nch field effect transistors will be described.

<Configuration of non-polar circuit B>
As shown in FIG. 7, the non-polar circuit B includes a first electrical path 31 to which the positive electrode of the power source 1 is connected to one end, one end of the load 2 to the other end, and the negative electrode of the power source 1 to one end, A third electric path 33 is provided at the other end to which the other end of the load 2 is connected. Note that FIG. 7 shows a case where the polarities of the power supply 1 are connected in order, and the arrangement of each element will also be explained based on this.

The first semiconductor light emitting elements 4 are provided in series on the first electric path 31 so that the cathodes (indicated by "K" in FIG. 7) are directed toward the lower voltage direction. The first semiconductor light emitting elements 4 are provided in series on the third electric path 33 so that the anodes (indicated by "A" in FIG. 7) are oriented in the lower voltage direction. Further, a second semiconductor light emitting device 5 is provided in parallel with the first semiconductor light emitting device 4 on the first electric path 31 and the third electric path 33 so that the direction is opposite to that of the first semiconductor light emitting device 4. It is being

A first field effect transistor Nch 61 is provided in series at a position on the first electric path 31 at a lower voltage than the first semiconductor light emitting element 4, with the drain connected in the lower voltage direction and the source connected in the higher voltage direction. ing.

The gate of the first field effect transistor Nch61 is connected to the first electric path 31 at a position where the voltage is higher than that of the first semiconductor light emitting element 4.

The drain of the second field effect transistor Nch101 is connected to the first electric path 31 at a position where the voltage is lower than that of the first semiconductor light emitting device 4, and the source of the second field effect transistor Nch101 is connected to the voltage lower than the load 2 through the second electric path 32. is connected to the third electric path 33 at a lower position.

The gate of the second field effect transistor Nch101 is connected to the second electric path 32 through the fifth electric path 35.

The fifth electric path 35 is connected to the third electric path 33 at a position where the voltage is higher than that of the first semiconductor light emitting element 4 and at a position where the voltage is lower than the drain of a third field effect transistor Nch81, which will be described later.

On the fifth electric path 35, a resistor 131 and a constant voltage element 121 are provided in series in order of proximity to the third electric path 33. Note that the constant voltage element 121 is provided so that the anode (indicated by "A" in FIG. 7) is directed toward the second electric path 32. The resistance value of the resistor 131 on this fifth electric path 35 is, for example, 1 (MΩ). Then, the constant voltage element 121 provided on the fifth electric path 35 applies an appropriate voltage to the gate of the second field effect transistor 101 without applying an excessive voltage to the gate of the second field effect transistor 101. It plays the role of turning it on. In order to generate a constant voltage in the constant voltage element 121, it is necessary to flow a weak current through the constant voltage element 121. Therefore, the resistor 131 plays a role of consuming the current flowing on the fifth electric path 35.

A constant voltage between a point on the second electric path 32 between the connection point of the source of the second field effect transistor 101 and the fifth electric path 35 and a connection point of the gate of the second field effect transistor 101 on the fifth electric path 35 A resistor 141 is provided on the sixth electric path 36 that connects the points between the elements 121 . The resistance value of this resistor 141 is, for example, 1 (MΩ). This resistor 141 serves to consume the charge accumulated in the second field effect transistor 101. By consuming the charge, it is possible to prevent the second field effect transistor 101 from being erroneously turned on and conducting between the drain and source.

A third field effect transistor Nch81 is provided in series at a position on the third electric path 33 where the voltage is lower than the load 2, with the source connected to the higher voltage direction and the drain connected to the lower voltage direction.

The gate of the third field effect transistor Nch81 is connected to the third electric path 33 through the fourth electric path 34.

The fourth electric path 34 is connected to the first electric path 31 at a position where the voltage is lower than that of the first semiconductor light emitting element 4 and at a position where the voltage is higher than the source of the first field effect transistor Nch61.

On the fourth electric path 34, a resistor 131 and a constant voltage element 121 are provided in series in the order of proximity to the first electric path 31. Note that the constant voltage element 121 is provided so that the anode (indicated by "A" in FIG. 7) is directed toward the third electric path 33. The resistance value of the resistor 131 on this fourth electric path 34 is, for example, 1 (MΩ). Then, the constant voltage element 121 provided on the fourth electric path 34 applies an appropriate voltage to the gate of the third field effect transistor 81 without applying an excessive voltage to the gate of the third field effect transistor 81. It plays the role of turning it on. In order to generate a constant voltage in the constant voltage element 121, it is necessary to flow a weak current through the constant voltage element 121. Therefore, the resistor 131 serves to consume the current flowing on the fourth electric path 34.

A constant voltage between a point on the third electric path 33 between the connection point of the source of the third field effect transistor 81 and the fourth electric path 34 and a connection point of the gate of the third field effect transistor 81 on the fourth electric path 34 A resistor 141 is provided on the seventh electric path 37 that connects the points between the elements 121 . The resistance value of this resistor 141 is, for example, 1 (MΩ). This resistor 141 serves to consume the charge accumulated in the third field effect transistor 81. By consuming the charge, it is possible to prevent the third field effect transistor 81 from being erroneously turned on and conducting between the drain and source.

The source of the fourth field effect transistor Nch111 is connected to the third electric path 33 at a position where the voltage is higher than that of the first semiconductor light emitting element 4, and the drain of the fourth field effect transistor Nch111 is connected to the third electric path 33 at a position where the voltage is higher than the load 2. It is connected to the electric line 31.

The gate of the fourth field effect transistor Nch111 is connected to the third electric path 33 at a position where the voltage is lower than that of the first semiconductor light emitting element 4.

<Operation of non-polar circuit B (in case of forward connection)>
Next, the operation of the non-polar circuit B according to the second embodiment of the present invention will be explained. As shown in FIG. 8, when the power supply 1 is sequentially connected to the non-polar circuit B, "power supply 1 → first semiconductor light emitting element 4 on the first electric path 31 → first field effect transistor Nch 61 → load 2 → third electric field A current flows through the path of "effect transistor Nch81→second semiconductor light emitting element 5→power supply 1".

Note that in the first field effect transistor Nch61 and the third field effect transistor Nch81, a voltage is applied between the drain (D) and the source (S) by the power supply 1 with the source (S) + polarity (positive polarity). , a current flows from the source (S) to the drain (D) due to the action of the body diode.

Further, since the gate of the first field effect transistor Nch61 is connected to the first electric path 31 at a position where the voltage is higher than that of the first semiconductor light emitting element 4, the potential is higher than the source, and the first field effect transistor Nch61 , turns "ON".

Further, the third field effect transistor Nch81 is turned "ON" by the constant voltage diode 121 applying a voltage to the gate of the third field effect transistor Nch81 when a current flows on the fourth electric path 34.

<Operation of non-polar circuit B (in case of reverse connection)>
Next, as shown in FIG. 9, when the power supply 1 is reversely connected to the non-polar circuit B, "power supply 1 → first semiconductor light emitting element 4 on the third electric path 33 → fourth field effect transistor Nch111 → load 2 → A current flows through a path of "second field effect transistor Nch101→second semiconductor light emitting element 5→power supply 1".

In addition, in the fourth field effect transistor Nch111, since a voltage of source (S) + polarity (positive polarity) is applied between the drain (D) and source (S) by the power supply 1, the voltage of the source (S) + polarity (positive polarity) is Current flows from the source (S) to the drain (D).

In addition, in the second field effect transistor Nch101, since a voltage is applied between the drain (D) and the source (S) by the power source 1 with the source (S) + polarity (positive polarity), due to the flickering of the body diode, Current flows from the source (S) to the drain (D).

Furthermore, when the polarity of the power source 1 is reversely connected, the gate of the fourth field effect transistor Nch111 is connected to the third electric path 33 at a position where the voltage is higher than that of the first semiconductor light emitting element 4. The potential becomes higher, and the fourth field effect transistor Nch111 turns "ON".

In addition, the second field effect transistor Nch101 is turned "ON" by the constant voltage diode 121 applying a voltage to the gate of the second field effect transistor Nch101 when a current flows through the fifth electric path 35.

Although preferred embodiments of the present invention have been described above, the non-polar circuit according to the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the present invention. Needless to say, there is.

1: power supply, 2: load,
31: first electric path, 32: second electric path, 33: third electric path, 34: fourth electric path, 35: fifth electric path, 36: sixth electric path, 37: seventh electric path,
4: first semiconductor light emitting device, 5: second semiconductor light emitting device,
61: first field effect transistor Nch, 611: p-type semiconductor, 612: n-type semiconductor, 613: oxide insulating film, 614: inversion layer,
71: Second field effect transistor Pch, 81: Third field effect transistor Nch, 91: Fourth field effect transistor Pch
101: Second field effect transistor Nch, 111: Fourth field effect transistor Nch,
121: Constant voltage semiconductor element,
131: Resistance,
141: Resistance

Claims (2)

It is a non-polar circuit that operates even if the power supply is connected in the forward or reverse direction.
a first electric path to which the positive pole of the power supply is connected to one end and one end of the load is connected to the other end;
a third electrical path, one end of which is connected to the negative electrode of the power supply, and the other end of which is connected to the other end of the load;
A first semiconductor light-emitting element is provided in series on the first electric circuit with a cathode facing in a lower voltage direction,
The first semiconductor light-emitting devices are arranged in series on the third electric current so that the anodes thereof are directed in the direction of lower voltage.
A second semiconductor light emitting element is provided in parallel with the first semiconductor light emitting element in a direction opposite to that of the first semiconductor light emitting element,
A first field effect transistor Nch is provided in series at a position on the first conductor at a lower voltage than the first semiconductor light emitting element, with a drain connected in a lower voltage direction and a source connected in a higher voltage direction. ,
The source of the second field effect transistor Pch is connected to the first electric path at a position where the voltage is lower than that of the first semiconductor light emitting element,
The drain of the second field effect transistor Pch is connected to the third electric path at a position where the voltage is lower than the load,
The gates of the first field effect transistor Nch and the second field effect transistor Pch are connected to the first electric path at a position where the voltage is higher than that of the first semiconductor light emitting element,
A fourth field effect transistor Pch is provided in series at a position on the third electric circuit at a lower voltage than the load, with a drain connected to an upper voltage direction and a source connected to a lower voltage direction,
A source of the third field effect transistor Nch is connected to the third electric path at a position where the voltage is higher than that of the first semiconductor light emitting element,
The drain of the third field effect transistor Nch is connected to the first electric path at a position where the voltage is higher than the load,
A non-polar circuit characterized in that gates of the third field effect transistor Nch and the fourth field effect transistor Pch are connected to the third electric path at a position lower in voltage than the first semiconductor light emitting element. . It is a non-polar circuit that operates even if the power supply is connected in the forward or reverse direction.
a first electric path to which the positive pole of the power supply is connected to one end and one end of the load is connected to the other end;
a third electrical path, one end of which is connected to the negative electrode of the power supply, and the other end of which is connected to the other end of the load;
A first semiconductor light-emitting element is provided in series on the first electric circuit with a cathode facing in a lower voltage direction,
The first semiconductor light-emitting devices are arranged in series on the third electric current so that the anodes thereof are directed in the direction of lower voltage.
A second semiconductor light emitting element is provided in parallel with the first semiconductor light emitting element in a direction opposite to that of the first semiconductor light emitting element,
A first field effect transistor Nch is provided in series at a position on the first conductor at a lower voltage than the first semiconductor light emitting element, with a drain connected in a lower voltage direction and a source connected in a higher voltage direction. ,
The gate of the first field effect transistor Nch is connected to the first electric path at a position where the voltage is higher than that of the first semiconductor light emitting element,
A drain of the second field effect transistor Nch is connected to the first electric path at a position where the voltage is lower than that of the first semiconductor light emitting element,
The source of the second field effect transistor Nch is connected to the third electric path through a second electric path at a position where the voltage is lower than that of the load,
The gate of the second field effect transistor Nch is connected to the second electric path through a fifth electric path,
The fifth electric path is connected to the third electric path at a position where the voltage is higher than the first semiconductor light emitting element and at a position where the voltage is lower than the drain of the third field effect transistor Nch,
Constant-voltage semiconductor elements are provided in series on the fifth electrical circuit so that the anode faces in the direction of the second electrical circuit,
The third field effect transistor Nch is provided in series at a position on the third electric circuit at a lower voltage than the load, with a source connected to an upper voltage direction and a drain connected to a lower voltage direction,
The gate of the third field effect transistor Nch is connected to the third electric path through a fourth electric path,
The fourth electric path is connected to the first electric path at a position where the voltage is lower than the first semiconductor light emitting element and at a position where the voltage is higher than the source of the first field effect transistor Nch,
Constant voltage semiconductor elements are provided in series on the fourth electrical circuit so that the anode faces in the direction of the third electrical circuit,
The source of the fourth field effect transistor Nch is connected to the third electric path at a position where the voltage is higher than that of the first semiconductor light emitting element,
The drain of the fourth field effect transistor Nch is connected to the first electric path at a position where the voltage is higher than the load,
A non-polar circuit, wherein the gate of the fourth field effect transistor Nch is connected to the third electric path at a position lower in voltage than the first semiconductor light emitting element.

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