JP2024041698A - Sensors and electronic devices - Google Patents

Abstract

[Problem] To provide a sensor and electronic device capable of improving characteristics. [Solution] According to an embodiment, the sensor includes a base, a first support portion fixed to the base, and a first member supported by the first support portion. The first member includes a first beam electrode and a second beam electrode. The mass of the second beam electrode is different from the mass of the first beam electrode. The thickness of the second beam electrode is different from the thickness of the first beam electrode. At least a portion of the material included in the second beam electrode is different from at least a portion of the material included in the first beam electrode. The size of the second holes included in the second beam electrode is different from the size of the first holes included in the first beam electrode. The density of the second holes is different from the density of the first holes. The number of the second holes is different from the number of the first holes. The shape of the second holes is different from the shape of the first holes. The layer structure of the second beam electrode is different from the layer structure of the first beam electrode. [Selected Figure] FIG.

Description

Embodiments of the invention relate to sensors and electronic devices.

For example, there are sensors that utilize a MEMS structure. It is desired to improve the characteristics of sensors.

US Patent No. 1,056,258

Embodiments provide sensors and electronic devices with improved properties.

According to an embodiment, the sensor includes a base, a first support fixed to the base, and a first member supported by the first support. A gap is provided between the base and the first member. The first member includes a first support region, a first connection structure, a second connection structure, a first beam, a second beam, a first beam electrode, and a second beam electrode. The first support part is between the base body and the first support area in a first direction from the base body to the first support part. The first support region is supported by the first support section. The first beam and the second beam extend along a second direction that intersects the first direction. A direction from the first connection structure to the second connection structure is along the second direction. The first support region is between the first connection structure and the second connection structure in the second direction. The first beam includes a first end and a first other end. The first end is connected to the first connection structure. The first other end is connected to the first support region. The second beam includes a second end and a second other end. The second end is connected to the second connection structure. The second other end is connected to the first support region. The first beam electrode is connected to the first beam. A third direction from the first beam to the first beam electrode intersects a plane including the first direction and the second direction. The second beam electrode is connected to the second beam. A direction from the second beam to the second beam electrode is along the third direction. The first beam electrode and the second beam electrode satisfy at least one of the first condition, the second condition, the third condition, the fourth condition, the fifth condition, the sixth condition, the seventh condition, and the eighth condition. . In the first condition, the second mass of the second beam electrode is different from the first mass of the first beam electrode. In the second condition, a second thickness of the second beam electrode along the first direction is different from a first thickness of the first beam electrode along the first direction. In the third condition, at least a portion of the second material contained in the second beam electrode is different from at least a portion of the first material contained in the first beam electrode. In the fourth condition, the second size of the second hole included in the second beam electrode is different from the first size of the first hole included in the first beam electrode. In the fifth condition, the second density of the second holes is different from the first density of the first holes. In the sixth condition, the second number of the second holes is different from the first number of the first holes. In the seventh condition, the second shape of the second hole is different from the first shape of the first hole. In the eighth condition, the second layer structure of the second beam electrode is different from the first layer structure of the first beam electrode.

FIG. 1 is a schematic plan view illustrating a sensor according to a first embodiment. FIG. 2 is a schematic cross-sectional view illustrating the sensor according to the first embodiment. FIG. 3 is a schematic plan view illustrating a part of the sensor according to the first embodiment. FIGS. 4A and 4B are schematic cross-sectional views illustrating a part of the sensor according to the first embodiment. FIGS. 5A and 5B are schematic cross-sectional views illustrating a part of the sensor according to the first embodiment. FIGS. 6A and 6B are schematic cross-sectional views illustrating a part of the sensor according to the first embodiment. FIGS. 7A and 7B are schematic cross-sectional views illustrating a part of the sensor according to the first embodiment. FIG. 8 is a schematic plan view illustrating the sensor according to the first embodiment. FIGS. 9A and 9B are schematic plan views illustrating the sensor according to the first embodiment. FIG. 10 is a schematic plan view illustrating the sensor according to the first embodiment. FIGS. 11(a) and 11(b) are schematic plan views illustrating the sensor according to the first embodiment. FIG. 12 is a schematic diagram illustrating an electronic device according to the second embodiment. FIGS. 13(a) to 13(h) are schematic diagrams illustrating applications of the electronic device according to the embodiment. 14A and 14B are schematic diagrams illustrating applications of the sensor according to the embodiment. FIG. 15 is a schematic plan view illustrating the sensor according to the first embodiment. FIG. 16 is a schematic plan view illustrating the sensor according to the first embodiment. FIG. 17 is a schematic plan view illustrating a sensor according to the third embodiment. FIG. 18 is a schematic cross-sectional view illustrating a sensor according to the third embodiment. FIG. 19 is a schematic plan view illustrating a sensor according to the third embodiment. FIG. 20 is a schematic plan view illustrating a sensor according to the third embodiment. FIG. 21 is a schematic plan view illustrating a sensor according to the third embodiment.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Each embodiment of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as the reality. Even when the same part is shown, the dimensions and ratios may be shown differently depending on the drawing.
In the specification of this application and each figure, the same elements as those described above with respect to the existing figures are given the same reference numerals, and detailed explanations are omitted as appropriate.

(First embodiment)
FIG. 1 is a schematic plan view illustrating a sensor according to a first embodiment.
FIG. 2 is a schematic cross-sectional view illustrating the sensor according to the first embodiment.
FIG. 2 is a sectional view taken along line A1-A2 in FIG.

As shown in FIGS. 1 and 2, the sensor 110 according to the embodiment includes a base body 50S, a first support portion 10S, and a first member 10M.

As shown in FIG. 2, the first support portion 10S is fixed to the base 50S. The first member 10M is supported by the first support section 10S. A gap g1 is provided between the base body 50S and the first member 10M. At least a portion of the first member 10M may be electrically conductive.

The first direction D1 from the base body 50S to the first support portion 10S is defined as the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

As shown in FIG. 1, the first member 10M includes a first support region 10Ms, a first movable region 10Ma, a second movable region 10Mb, a first connection structure 21c, a second connection structure 22c, a first beam 31, It includes a second beam 32, a first beam electrode 31E, and a second beam electrode 32E.

As shown in FIG. 2, the first support portion 10S is located between the base body 50S and the first support region 10Ms in the first direction D1.

As shown in FIG. 1, the first beam 31 and the second beam 32 extend along the second direction D2. The second direction D2 intersects the first direction D1. The second direction D2 is, for example, the X-axis direction.

In the second direction D2, the first support area 10Ms is between the first movable area 10Ma and the second movable area 10Mb.

The first connection structure 21c is supported by the first movable region 10Ma. The first connection structure 21c is located between the first movable area 10Ma and the first support area 10Ms in the second direction D2.

The first beam 31 includes a first end 31e and a first other end 31f. The first end 31e is connected to the first connection structure 21c. The first other end 31f is connected to the first support region 10Ms.

The second connection structure 22c is supported by the second movable region 10Mb. The second connection structure 22c is located between the first support area 10Ms and the second movable area 10Mb in the second direction D2.

The second beam 32 includes a second end 32e and a second other end 32f. The second end 32e is connected to the second connection structure 22c. The second other end 32f is connected to the first support region 10Ms.

The first beam electrode 31E is connected to the first beam 31. The third direction D3 from the first beam 31 to the first beam electrode 31E intersects with a plane including the first direction D1 and the second direction D2.

The second beam electrode 32E is connected to the second beam 32. The direction from the second beam 32 to the second beam electrode 32E is along the third direction D3.

In the embodiment, the second beam electrode 32E is asymmetrical with respect to the first beam electrode 31E. For example, the first beam electrode 31E and the second beam electrode 32E differ in at least one of mass, thickness, shape, layer structure, material, and hole. As a result, for example, a difference in resonance frequency occurs between the first beam 31 and the second beam 32. This expands the dynamic range of detection. A sensor with improved characteristics can be provided.

FIG. 3 is a schematic plan view illustrating a part of the sensor according to the first embodiment.
FIG. 3 shows a part of FIG. 1 in an enlarged manner.
As shown in FIG. 3, the sensor 110 may include a first electrode 51 and a second electrode 52. The first electrode 51 and the second electrode 52 are fixed to the base 50S.

As described above, the first member 10M includes the first beam electrode 31E and the second beam electrode 32E. The first electrode 51 faces the first beam electrode 31E. The second electrode 52 faces the second beam electrode 32E.

As shown in FIG. 3, a control section 70 may be provided. The control unit 70 may be included in the sensor 110. The control unit 70 may be provided separately from the sensor 110.

The control unit 70 is electrically connected to the first electrode 51, the second electrode 52, the first beam electrode 31E, and the second beam electrode 32E. For example, the first beam electrode 31E and the second beam electrode 32E are electrically connected to, for example, the first support region 10Ms of the first member 10M.

The control unit 70 can apply a drive signal including an AC component between the first electrode 51 and the first beam electrode 31E. The control unit 70 can apply a drive signal including an AC component between the second electrode 52 and the second beam electrode 32E. The first beam 31 can vibrate according to the drive signal. The second beam 32 can vibrate according to the drive signal.

For example, when force (acceleration) is applied to the first member 10M from the outside, the first member 10M can be displaced along the second direction D2. For example, the first movable region 10Ma and the second movable region 10Mb are displaced along the second direction D2. The displacement is transmitted to the first connection structure 21c and the second connection structure 22c. Thereby, the first connection structure 21c and the second connection structure 22c are displaced along the second direction D2. Based on this displacement, compressive stress or tensile stress is applied to the first beam 31 and the second beam 32. Due to the stress, the resonant frequency of the first beam 31 changes, and the resonant frequency of the second beam 32 changes. The magnitude of the change in resonance frequency is opposite between the first beam 31 and the second beam 32. By detecting the difference between the resonant frequency of the first beam 31 and the resonant frequency of the second beam 32, the force (acceleration) applied from the outside can be detected with high accuracy.

As described above, in the embodiment, the first beam electrode 31E and the second beam electrode 32E are asymmetrical with respect to each other. This causes a difference in resonance frequency between the first beam 31 and the second beam 32. This expands the dynamic range of detection.

The difference in resonance frequency between the first beam 31 and the second beam 32 may be detected by any method. For example, the difference in resonance frequency may be detected using an optical method. For example, the difference in resonance frequency may be detected using an electrical method. Below, an example of a configuration in which a difference in resonance frequency is detected using an electrical method will be described.

As shown in FIG. 3, the sensor 110 may include a first opposing electrode 51A and a second opposing electrode 52A. The first opposing electrode 51A and the second opposing electrode 52A are fixed to the base 50S. The first member 10M may include a first opposing beam electrode 31AE and a second opposing beam electrode 32AE. The first opposing beam electrode 31AE is connected to the first beam 31. In the third direction D3, the first beam 31 is between the first opposing beam electrode 31AE and the first beam electrode 31E. The second opposing beam electrode 32AE is connected to the second beam 32. In the third direction D3, the second beam 32 is between the second opposing beam electrode 32AE and the second beam electrode 32E.

The first electrode 51 faces the first beam electrode 31E. The first opposing electrode 51A faces the first opposing beam electrode 31AE. The second electrode 52 faces the second beam electrode 32E. The second opposing electrode 52A faces the second opposing beam electrode 32AE.

As shown in FIG. 3, the control unit 70 can apply a drive signal including an AC component between the first electrode 51 and the first beam electrode 31E. The control unit 70 can detect an electrical signal generated between the first opposing electrode 51A and the first opposing beam electrode 31AE. The control unit 70 can apply a drive signal including an AC component between the second electrode 52 and the second beam electrode 32E. The control unit 70 can detect an electrical signal generated between the second opposing electrode 52A and the second opposing beam electrode 32AE.

The first beam is The difference between the resonant frequency of the second beam 31 and the resonant frequency of the second beam 32 is detected. By detecting the frequency difference, external force (acceleration) can be detected with high accuracy.

In the embodiment, the second opposing beam electrode 32AE may be asymmetrical with respect to the first opposing beam electrode 31AE. For example, the first opposing beam electrode 31AE and the second opposing beam electrode 32AE differ in at least one of mass, thickness, shape, layer structure, material, and hole. This increases the difference in resonance frequency between the first beam 31 and the second beam 32, for example. This expands the dynamic range of detection.

FIGS. 4A and 4B are schematic cross-sectional views illustrating a part of the sensor according to the first embodiment.
FIG. 4(a) is a sectional view taken along the line B1-B2 in FIG. FIG. 4(b) is a sectional view taken along the line C1-C2 in FIG.

As shown in FIG. 4(a), the first beam electrode 31E includes a first hole 31h. The second beam electrode 32E includes a second hole 32h. In this example, the number of second holes 32h is different from the number of first holes 31h. For example, the second density of the second holes 32h is different from the first density of the first holes 31h.

As shown in FIG. 4(b), the first opposing beam electrode 31AE includes a first opposing hole 31Ah. The second opposing beam electrode 32AE includes a second opposing hole 32Ah. In this example, the number of second opposing holes 32Ah is different from the number of first opposing holes 31Ah. For example, the second opposing density of the second opposing holes 32Ah is different from the first opposing density of the first opposing holes 31Ah.

FIGS. 5A and 5B are schematic cross-sectional views illustrating a part of the sensor according to the first embodiment.
FIG. 5(a) is a cross-sectional view corresponding to the line B1-B2 in FIG. FIG. 5(b) is a cross-sectional view corresponding to the line C1-C2 in FIG.

As shown in FIG. 5(a), in the sensor 111 according to the embodiment, the first beam electrode 31E includes a first hole 31h. The second beam electrode 32E includes a second hole 32h. In this example, the size of the second hole 32h (in this example, the length along the second direction D2) is different from the size of the first hole 31h (in this example, the length along the second direction D2). For example, the second size of the second hole 32h is different from the first size of the first hole 31h.

As shown in FIG. 5(b), the first opposing beam electrode 31AE includes a first opposing hole 31Ah. The second opposing beam electrode 32AE includes a second opposing hole 32Ah. In this example, the size of the second facing hole 32Ah (in this example, the length along the second direction D2) is the size of the first facing hole 31Ah (in this example, the length along the second direction D2). It is different from. For example, the second opposing size of the second opposing hole 32Ah is different from the first opposing size of the first opposing hole 31Ah.

FIGS. 6A and 6B are schematic cross-sectional views illustrating a part of the sensor according to the first embodiment.
FIG. 6(a) is a cross-sectional view corresponding to the line B1-B2 in FIG. FIG. 6(b) is a cross-sectional view corresponding to line C1-C2 in FIG.

As shown in FIG. 6A, in the sensor 112 according to the embodiment, the thickness of the first beam electrode 31E is different from the thickness of the second beam electrode 32E. For example, the second thickness of the second beam electrode 32E along the first direction D1 is different from the first thickness of the first beam electrode 31E along the first direction D1.

As shown in FIG. 6(b), the thickness of the first opposing beam electrode 31AE is different from the thickness of the second opposing beam electrode 32AE. For example, the second opposing thickness of the second opposing beam electrode 32AE along the first direction D1 is different from the first opposing thickness of the first opposing beam electrode 31AE along the first direction D1.

FIGS. 7A and 7B are schematic cross-sectional views illustrating a part of the sensor according to the first embodiment.
FIG. 7(a) is a cross-sectional view corresponding to the line B1-B2 in FIG. FIG. 7(b) is a cross-sectional view corresponding to line C1-C2 in FIG.

As shown in FIG. 7A, in the sensor 113 according to the embodiment, the second beam electrode 32E includes a metal layer 32F. The first beam electrode 31E does not include the metal layer 32F. For example, at least a portion of the second material contained in the second beam electrode 32E is different from at least a portion of the first material contained in the first beam electrode 31E.

As shown in FIG. 7(b), the second opposing beam electrode 32AE includes a metal layer 32F. The first opposing beam electrode 31AE does not include the metal layer 32F. For example, at least a portion of the second opposing material included in the second opposing beam electrode 32AE is different from at least a portion of the first opposing material included in the first opposing beam electrode 31AE.

For example, the first beam electrode 31E and the second beam electrode 32E may have different masses.

The first beam electrode 31E and the second beam electrode 32E may satisfy at least one of the following conditions: first condition, second condition, third condition, fourth condition, fifth condition, sixth condition, seventh condition, and eighth condition.

In the first condition, the second mass of the second beam electrode 32E is different from the first mass of the first beam electrode 31E. In the second condition, the second thickness of the second beam electrode 32E along the first direction D1 is different from the first thickness of the first beam electrode 31E along the first direction D1. In the third condition, at least a portion of the second material contained in the second beam electrode 32E is different from at least a portion of the first material contained in the first beam electrode 31E.

In the fourth condition, the second size of the second hole 32h included in the second beam electrode 32E is different from the first size of the first hole 31h included in the first beam electrode 31E. In the fifth condition, the second density of the second holes 32h is different from the first density of the first holes 31h. In the sixth condition, the second number of the second holes 32h is different from the first number of the first holes 31h. In the seventh condition, the second shape of the second hole 32h is different from the first shape of the first hole 31h. In the eighth condition, the second layer structure of the second beam electrode 32E is different from the first layer structure of the first beam electrode 31E. Under these conditions, a difference in resonance frequency may be formed between the first beam 31 and the second beam 32.

The first opposing beam electrode 31AE and the second opposing beam electrode 32AE meet the following 9th condition, 10th condition, 11th condition, 12th condition, 13th condition, 14th condition, 15th condition, and 16th condition. It is good to satisfy at least one of the following.

In the ninth condition, the second opposing mass of the second opposing beam electrode 32AE is different from the first opposing mass of the first opposing beam electrode 31AE. In the tenth condition, the second opposing thickness of the second opposing beam electrode 32AE along the first direction D1 is different from the first opposing thickness of the first opposing beam electrode 31AE along the first direction D1. In the eleventh condition, at least a portion of the second opposing material included in the second opposing beam electrode 32AE is different from at least a portion of the first opposing material included in the first opposing beam electrode 31AE.

In the twelfth condition, the second opposing size of the second opposing hole 32Ah included in the second opposing beam electrode 32AE is different from the first opposing size of the first opposing hole 31Ah included in the first opposing beam electrode 31AE. In the thirteenth condition, the second opposing density of the second opposing holes 32Ah is different from the first opposing density of the first opposing holes 31Ah. In the fourteenth condition, the second number of opposing holes 32Ah is different from the first number of opposing holes 31Ah. In the fifteenth condition, the second opposing shape of the second opposing hole 32Ah is different from the first opposing shape of the first opposing hole 31Ah. In the 16th condition, the second opposing layer structure of the second opposing beam electrode 32AE is different from the first opposing layer structure of the first opposing beam electrode 31AE. Under these conditions, a difference in resonance frequency may be formed between the first beam 31 and the second beam 32.

In the embodiment, the planar outer shape of the first beam electrode 31E may be the same as the planar outer shape of the second beam electrode 32E. The planar outer shape of the first opposing beam electrode 31AE may be the same as the planar outer shape of the second opposing beam electrode 32AE. For example, the same heat dissipation properties can be obtained. For example, the difference in temperature between the first beam electrode 31E and the second beam electrode 32E can be suppressed. For example, the difference in temperature between the first opposing beam electrode 31AE and the second opposing beam electrode 32AE can be suppressed.

For example, the first external shape of the first planar shape of the first beam electrode 31E in the first plane (XY plane) including the second direction D2 and the third direction D3 is the same as that of the second beam electrode 32E in the first plane. It is substantially the same as the second outer shape of the biplanar shape.

For example, the first opposing beam electrode 31AE is preferably line-symmetrical with the first beam electrode 31E with respect to an axis passing through the first connection structure 21c and the second connection structure 22c and along the second direction D2. . For example, the second opposing beam electrode 32AE is preferably line-symmetrical with the second beam electrode 32E with respect to an axis passing through the first connection structure 21c and the second connection structure 22c and along the second direction D2. . Stable vibration can be obtained.

As shown in FIG. 1, the first member 10M may further include a first structure 21 and a first support structure 11S. The first structure position of the first structure body 21 in the second direction D2 is the first movable area position of the first movable area 10Ma in the second direction D2, and the first beam position of the first beam 31 in the second direction D2. It is between.

The first connected structure position of the first connected structure 21c in the second direction D2 is between the first structure position and the first beam position. The first support structure position of the first support structure 11S in the second direction D2 is between the first structure position and the first support area position of the first support area 10Ms in the second direction D2.

The first structure 21 includes a first portion 21e, a first other portion 21f, and a first intermediate portion 21m. The direction from the first portion 21e to the first other portion 21f is along the third direction D3. The first intermediate portion 21m is between the first portion 21e and the first other portion 21f. The first portion 21e is connected to the first connection structure 21c. The first other portion 21f is connected to the first movable region 10Ma. The first intermediate portion 21m is connected to the first support structure 11S.

As shown in FIG. 1, the first member 10M may further include a third structure 23 and a third support structure 13S. The third structure position of the third structure body 23 in the second direction D2 is the second beam position of the second beam 32 in the second direction D2, and the second movable area position of the second movable area 10Mb in the second direction D2. It is between.

The second connected structure position of the second connected structure 22c in the second direction D2 is between the second beam position and the third structure position. The third support structure position of the third support structure 13S in the second direction D2 is between the first support area position and the third structure position.

The third structure 23 includes a third portion 23e, a third other portion 23f, and a third intermediate portion 23m. The direction from the third portion 23e to the third other portion 23f is along the third direction D3. The third intermediate portion 23m is between the third portion 23e and the third other portion 23f. The third portion 23e is connected to the second connection structure 22c. The third other portion 23f is connected to the second movable region 10Mb. The third intermediate portion 23m is connected to the third support structure 13S.

As shown in FIG. 1, the first member 10M may further include a second structure 22 and a second support structure 12S. The second structure position of the second structure body 22 in the second direction D2 is between the first movable region position and the first beam position. The second support structure position of the second support structure 12S in the second direction D2 is between the second structure position and the first support area position.

The second structure 22 includes a second portion 22e, a second other portion 22f, and a second intermediate portion 22m. The direction from the second other portion 22f to the second portion 22e is along the third direction D3. The second intermediate portion 22m is located between the second other portion 22f and the second portion 22e. The second portion 22e is connected to the first connection structure 21c. The second other portion 22f is connected to the first movable region 10Ma. The second intermediate portion 22m is connected to the second support structure 12S. In the third direction D3, the first connection structure 21c is between at least a portion of the second support structure 12S and at least a portion of the first support structure 11S.

As shown in FIG. 1, the first member 10M may further include a fourth structure 24 and a fourth support structure 14S. The fourth structure body position in the second direction D2 of the fourth structure body 24 is between the second beam position and the second movable region position. The fourth support structure position of the fourth support structure 14S in the second direction D2 is between the first support area position and the fourth structure position.

The fourth structure 24 includes a fourth portion 24e, a fourth other portion 24f, and a fourth intermediate portion 24m. The direction from the fourth other portion 24f to the fourth portion 24e is along the third direction D3. The fourth intermediate portion 24m is located between the fourth other portion 24f and the fourth portion 24e. The fourth portion 24e is connected to the second connection structure 22c. The fourth other portion 24f is connected to the second movable region 10Mb. The fourth intermediate portion 24m is connected to the fourth support structure 14S. In the third direction D3, the second connection structure 22c is between at least a portion of the fourth support structure 14S and at least a portion of the third support structure 13S.

The first structure 21, the second structure 22, the third structure 23, and the fourth structure 24 are, for example, levers. The first portion 21e is, for example, a point of action. The first other portion 21f is, for example, a point of emphasis. The first intermediate portion 21m is, for example, a fulcrum. The second portion 22e is, for example, a point of action. The second other portion 22f is, for example, a point of emphasis. The second intermediate portion 22m is, for example, a fulcrum. The third portion 23e is, for example, a point of action. The third other portion 23f is, for example, a point of emphasis. The third intermediate portion 23m is, for example, a fulcrum. The fourth portion 24e is, for example, a point of action. The fourth other portion 24f is, for example, a point of emphasis. The fourth intermediate portion 24m is, for example, a fulcrum.

The first structure 21 and the second structure 22 efficiently transmit the displacement of the first movable region 10Ma to the first connection structure 21c. The third structure 23 and the fourth structure 24 efficiently transmit the displacement of the second movable region 10Mb to the second connection structure 22c.

The distance along the third direction D3 between the first portion 21e and the first intermediate portion 21m is defined as a first distance. The distance along the third direction D3 between the first intermediate portion 21m and the first other portion 21f is defined as a second distance. For example, the first distance is shorter than the second distance. With such a first structure 21, for example, displacement of the first movable region 10Ma along the second direction D2 is efficiently transmitted to the first connection structure 21c. The configuration regarding the first structure 21 can be applied to the second structure 22, the third structure 23, and the fourth structure 24.

As shown in FIG. 1, the first member 10M may include a third movable region 10Mc and a fourth movable region 10Md. The direction from the fourth movable region 10Md to the third movable region 10Mc is along the third direction D3. The third movable region 10Mc and the fourth movable region 10Md are continuous with the first movable region 10Ma and the second movable region 10Mb. There is a first support area 10Ms between the third movable area 10Mc and the fourth movable area 10Md.

As shown in FIG. 3, the first member 10M may further include a first movable region connecting portion 11A. The position of the first support structure 11S in the third direction D3 is between the position of the first support region 10Ms in the third direction D3 and the position of the third movable region 10Mc in the third direction D3. The first movable region connecting portion 11A connects the first support structure 11S to the third movable region 10Mc. By providing the first movable region connecting portion 11A, displacement of the first support structure 11S in the third direction D3 is suppressed. The displacement of the first support structure 11S along the second direction D2 becomes stable.

As shown in FIG. 3, the first member 10M may further include a second movable region connecting portion 12A. The position of the second support structure 12S in the third direction D3 is between the position of the fourth movable region 10Md in the third direction D3 and the position of the first support region 10Ms in the third direction D3. The second movable region connecting portion 12A connects the second support structure 12S to the fourth movable region 10Md. By providing the second movable region connecting portion 12A, displacement of the second support structure 12S in the third direction D3 is suppressed. The displacement of the second support structure 12S along the second direction D2 becomes stable.

As shown in FIG. 3, the first member 10M may further include a third movable region connecting portion 13A. The position of the third support structure 13S in the third direction D3 is between the position of the first support region 10Ms in the third direction D3 and the position of the third movable region 10Mc in the third direction D3. The third movable region connecting portion 13A connects the third support structure 13S to the third movable region 10Mc. By providing the third movable region connecting portion 13A, displacement of the third support structure 13S in the third direction D3 is suppressed. The displacement of the third support structure 13S along the second direction D2 becomes stable.

As shown in FIG. 3, the first member 10M may further include a fourth movable region connecting portion 14A. The position of the fourth support structure 14S in the third direction D3 is between the position of the fourth movable region 10Md in the third direction D3 and the position of the first support region 10Ms in the third direction D3. The fourth movable region connecting portion 14A connects the fourth support structure 14S to the fourth movable region 10Md. By providing the fourth movable region connecting portion 14A, displacement of the fourth support structure 14S in the third direction D3 is suppressed. The displacement of the fourth support structure 14S along the second direction D2 becomes stable.

The configuration described above with respect to sensor 110 may be applied to sensors 111-113.

As shown in FIG. 1, the first beam electrode 31E includes a first extending portion 31Ea and a first connecting portion 31Ex. The first extending portion 31Ea extends along the second direction D2. The first connecting portion 31Ex connects the first extending portion 31Ea to the first beam 31. The configuration of the first beam electrode 31E may be applied to the first opposing beam electrode 31AE, the second beam electrode 32E, and the second opposing beam electrode 32AE.

FIG. 8 is a schematic plan view illustrating the sensor according to the first embodiment.
FIGS. 9A and 9B are schematic plan views illustrating the sensor according to the first embodiment.
9(a) and 9(b) illustrate a part of FIG. 8. FIG.

As shown in FIG. 8, in the sensor 114 according to the embodiment, the first beam electrode 31E has a first extending portion 31Ea extending along the second direction D2, and a first extending portion 31Ea is connected to the first beam 31. A first connecting portion 31Ex for connection is included. In the sensor 114, the first beam electrode 31E includes a plurality of first extension portions 31Ea.

As shown in FIG. 9(a), a plurality of first extension parts 31Ea are provided. The first connection part 31Ex connects the plurality of first extension parts 31Ea to each other. One of the plurality of first extension parts 31Ea is between the first beam 31 and another of the plurality of first extension parts 31Ea. The length of the one of the plurality of first extension parts 31Ea along the second direction D2 is longer than the length of the other of the plurality of first extension parts 31Ea along the second direction D2. The length of the plurality of first extension parts 31Ea along the second direction D2 becomes shorter as it moves away from the first beam 31.

For example, one of the plurality of first extension parts 31Ea may be provided between a part of the first electrode 51 and a part of the first counter electrode 51A. By providing the plurality of first extending portions 31Ea, the first beam 31 can be vibrated more effectively. By providing the plurality of first extension portions 31Ea, the resonance frequency of the first beam 31 can be detected more effectively.

As shown in FIG. 9(a), the first opposing beam electrode 31AE connects the first opposing extending portion 31AEa extending along the second direction D2 and the first opposing extending portion 31AEa to the first beam 31. The first opposing connection portion 31AEx may be included. In this example, a plurality of first opposing extensions 31AEa are provided. The first opposing connecting portion 31AEx connects the plurality of first opposing extending portions 31AEa to each other. One of the plurality of first opposed extension parts 31AEa is between the first beam 31 and another one of the plurality of first opposed extension parts 31AEa. The length of one of the plurality of first opposing extensions 31AEa along the second direction D2 is longer than the length of another one of the plurality of first opposing extensions 31AEa along the second direction D2. It's also long. The length of the plurality of first opposing extensions 31AEa along the second direction D2 becomes shorter as the distance from the first beam 31 increases.

As shown in FIG. 9(b), the second beam electrode 32E includes a second extending portion 32Ea extending along the second direction D2, and a second connection connecting the second extending portion 32Ea to the second beam 32. 32Ex. A plurality of second extension portions 32Ea are provided. The second connecting portion 32Ex connects the plurality of second extending portions 32Ea to each other. One of the plurality of second extension parts 32Ea is between the second beam 32 and another one of the plurality of second extension parts 32Ea. The length of one of the plurality of second extension parts 32Ea along the second direction D2 is longer than the length of another one of the plurality of second extension parts 32Ea along the second direction D2. . The length of the plurality of second extension portions 32Ea along the second direction D2 becomes shorter as the distance from the second beam 32 increases.

9(b), the second opposing beam electrode 32AE may include a second opposing extension portion 32AEa extending along the second direction D2 and a second opposing connection portion 32AEx that connects the second opposing extension portion 32AEa to the second beam 32. In this example, a plurality of second opposing extension portions 32AEa are provided. The second opposing connection portion 32AEx connects the plurality of second opposing extension portions 32AEa to each other. One of the plurality of second opposing extension portions 32AEa is between the second beam 32 and another one of the plurality of second opposing extension portions 32AEa. The length of the one of the plurality of second opposing extension portions 32AEa along the second direction D2 is longer than the length of the other one of the plurality of second opposing extension portions 32AEa along the second direction D2. The length of the multiple second opposing extensions 32AEa along the second direction D2 becomes shorter as they move away from the second beam 32.

A wide dynamic range can also be obtained in the sensors 111-114. A sensor with improved characteristics can be provided.

FIG. 10 is a schematic plan view illustrating the sensor according to the first embodiment.
As shown in FIG. 10, in the sensor 120 according to the embodiment, in addition to the first beam 31 and the second beam 32, a first opposing beam 31A and a second opposing beam 32A are provided. The configuration of the sensor 120 other than this may be the same as the configuration of the sensor 110.

In the sensor 120, the first member 10M includes a first opposing beam 31A, a second opposing beam 32A, a first opposing beam electrode 31AE, and a second opposing beam electrode 32AE. The first opposing beam 31A and the second opposing beam 32A extend along the second direction D2.

The first opposing beam 31A includes a first opposing end 31Ae and a first opposing end 31Af. The first opposing end 31Ae is connected to the first connection structure 21c. The first opposite end 31Af is connected to the first support region 10Ms.

The second opposing beam 32A includes a second opposing end 32Ae and a second opposing end 32Af. The second opposing end 32Ae is connected to the second connection structure 22c. The second opposite end 32Af is connected to the first support region 10Ms.

The first opposing beam electrode 31AE is connected to the first opposing beam 31A. In the third direction D3, the first opposing beam 31A is between the first opposing beam electrode 31AE and the first beam electrode 31E. In the third direction D3, the first beam 31 is between the first opposing beam 31A and the first beam electrode 31E.

The second opposing beam electrode 32AE is connected to the second opposing beam 32A. In the third direction D3, the second opposing beam 32A is between the second opposing beam electrode 32AE and the second beam electrode 32E. In the third direction D3, the second beam 32 is between the second opposing beam 32A and the second beam electrode 32E.

The first opposing beam electrode 31AE and the second opposing beam electrode 32AE satisfy at least the above-mentioned 9th condition, 10th condition, 11th condition, 12th condition, 13th condition, 14th condition, 15th condition, and 16th condition. Satisfy either. Sensor 120 also provides a wide dynamic range. A sensor with improved characteristics can be provided.

In the sensor 120, a first electrode 51 and a first opposing electrode 51A may be provided (see FIG. 3). The first electrode 51 faces the first beam electrode 31E. The first opposing electrode 51A faces the first opposing beam electrode 31AE. A second electrode 52 and a second counter electrode 52A may be provided (see FIG. 3). The second electrode 52 faces the second beam electrode 32E. The second opposing electrode 52A faces the second opposing beam electrode 32AE.

In the sensor 120, the control unit 70 (see FIG. 3) can apply a drive signal including an AC component between the first electrode 51 and the first beam electrode 31E. The control unit 70 can detect an electrical signal generated between the first opposing electrode 51A and the first opposing beam electrode 31AE. The control unit 70 (see FIG. 3) can apply a drive signal including an AC component between the second electrode 52 and the second beam electrode 32E. The control unit 70 can detect an electrical signal generated between the second opposing electrode 52A and the second opposing beam electrode 32AE.

11A and 11B are schematic plan views illustrating the sensor according to the first embodiment.
11A, the sensor 121 according to the embodiment is provided with a plurality of first extension parts 31Ea. One of the plurality of first extension parts 31Ea is between the first beam 31 and another of the plurality of first extension parts 31Ea. The length of the one of the plurality of first extension parts 31Ea along the second direction D2 is longer than the length of the other one of the plurality of first extension parts 31Ea along the second direction D2.

As shown in FIG. 11(a), a plurality of first opposing extensions 31AEa may be provided. One of the plurality of first opposing extensions 31AEa is between the first beam 31 and another of the plurality of first opposing extensions 31AEa. The length of the one of the plurality of first opposing extensions 31AEa along the second direction D2 is longer than the length of the other of the plurality of first opposing extensions 31AEa along the second direction D2.

As shown in FIG. 11(b), a plurality of second extending portions 32Ea may be provided. One of the plurality of second extension parts 32Ea is between the second beam 32 and another one of the plurality of second extension parts 32Ea. The length of one of the plurality of second extension parts 32Ea along the second direction D2 is longer than the length of another one of the plurality of second extension parts 32Ea along the second direction D2. .

As shown in FIG. 11(b), a plurality of second opposing extensions 32AEa may be provided. One of the plurality of second opposing extensions 32AEa is between the second beam 32 and another one of the plurality of second opposing extensions 32AEa. The length of one of the plurality of second opposed extension parts 32AEa along the second direction D2 is longer than the length of another one of the plurality of second opposed extension parts 32AEa along the second direction D2. It's also long.

As already explained, at least a portion of the first member 10M may be electrically conductive. The first member 10M may include, for example, conductive silicon. The first member 10M may include, for example, a metal layer. For example, high heat dissipation can be obtained.

(Second embodiment)
The second embodiment relates to an electronic device.
FIG. 12 is a schematic diagram illustrating an electronic device according to the second embodiment.
As shown in FIG. 12, an electronic device 310 according to the embodiment includes the sensor according to the first embodiment and a circuit control section 170. In the example of FIG. 12, a sensor 110 is depicted as the sensor. The circuit control unit 170 can control the circuit 180 based on the signal S1 obtained from the sensor. The circuit 180 is, for example, a control circuit for the drive device 185. According to the embodiment, for example, the circuit 180 for controlling the drive device 185 and the like can be controlled with high precision.

FIGS. 13(a) to 13(h) are schematic diagrams illustrating applications of the electronic device according to the embodiment.
As shown in FIG. 13(a), the electronic device 310 may be at least part of a robot. As shown in FIG. 13(b), the electronic device 310 may be at least a part of a machine robot installed in a manufacturing factory or the like. As shown in FIG. 13(c), the electronic device 310 may be at least a part of an automatic guided vehicle in a factory or the like. As shown in FIG. 13(d), the electronic device 310 may be at least a part of a drone (unmanned aerial vehicle). As shown in FIG. 13(e), electronic device 310 may be at least part of an airplane. As shown in FIG. 13(f), the electronic device 310 may be at least part of a ship. As shown in FIG. 13(g), electronic device 310 may be at least part of a submarine. As shown in FIG. 13(h), the electronic device 310 may be at least a part of an automobile. Electronic device 310 may include, for example, at least one of a robot and a moving object.

FIGS. 14(a) and 14(b) are schematic diagrams illustrating applications of the sensor according to the embodiment.
As shown in FIG. 14A, a sensor 430 according to the embodiment includes the sensor according to the first embodiment and a transmitting/receiving section 420. In the example of FIG. 14(a), a sensor 110 is depicted as the sensor. The transmitting/receiving unit 420 can transmit the signal obtained from the sensor 110, for example, by at least one of wireless and wired methods. The sensor 430 is provided, for example, on a slope surface 410 of the road 400 or the like. Sensors 430 can, for example, monitor conditions such as facilities (eg, infrastructure). Sensor 430 may be, for example, a condition monitoring device.

For example, the sensor 430 detects a change in the state of the slope surface 410 of the road 400 with high accuracy. The change in the state of the slope surface 410 includes, for example, at least one of a change in the inclination angle and a change in the vibration state. A signal (inspection result) obtained from the sensor 110 is transmitted by the transmitting/receiving section 420. The condition of a facility (eg, infrastructure) can be monitored, eg, continuously.

As shown in FIG. 14(b), the sensor 430 is provided on a part of a bridge 460, for example. Bridge 460 is provided over river 470. For example, the bridge 460 includes at least one of a main girder 450 and a bridge pier 440. The sensor 430 is provided on at least one of the main girder 450 and the pier 440. For example, the angle of at least one of the main girder 450 and the pier 440 may change due to deterioration or the like. For example, the vibration state of at least one of the main girder 450 and the pier 440 may change. Sensor 430 detects these changes with high accuracy. The detection results can be transmitted to any location by the transmitter/receiver 420. Abnormalities can be detected effectively.

Embodiments include the following configurations (eg, technical proposals).
(Configuration 1)
A base body;
a first support portion fixed to the base;
a first member supported by the first support part;
Equipped with
a gap is provided between the base body and the first member,
The first member includes a first support region, a first movable region, a second movable region, a first connection structure, a second connection structure, a first beam, a second beam, a first beam electrode, and a second beam electrode. including;
The first support part is between the base body and the first support area in a first direction from the base body to the first support part,
The first support area is supported by the first support part,
The first beam and the second beam extend along a second direction intersecting the first direction,
In the second direction, the first support area is between the first movable area and the second movable area,
the first connection structure is supported by the first movable region,
the first connection structure is between the first movable region and the first support region in the second direction;
The first beam includes a first end and a first other end, the first end is connected to the first connection structure, and the first other end is connected to the first support area,
the second connection structure is supported by the second movable region;
the second connection structure is between the first support area and the second movable area in the second direction;
The second beam includes a second end and a second other end, the second end is connected to the second connection structure, and the second other end is connected to the first support area,
the first beam electrode is connected to the first beam,
a third direction from the first beam to the first beam electrode intersects a plane including the first direction and the second direction;
the second beam electrode is connected to the second beam,
The direction from the second beam to the second beam electrode is along the third direction,
The first beam electrode and the second beam electrode satisfy at least one of the first condition, the second condition, the third condition, the fourth condition, the fifth condition, the sixth condition, the seventh condition, and the eighth condition. ,
In the first condition, the second mass of the second beam electrode is different from the first mass of the first beam electrode,
In the second condition, a second thickness of the second beam electrode along the first direction is different from a first thickness of the first beam electrode along the first direction,
In the third condition, at least a portion of the second material contained in the second beam electrode is different from at least a portion of the first material contained in the first beam electrode,
In the fourth condition, the second size of the second hole included in the second beam electrode is different from the first size of the first hole included in the first beam electrode,
In the fifth condition, the second density of the second hole is different from the first density of the first hole,
In the sixth condition, the second number of the second holes is different from the first number of the first holes,
In the seventh condition, the second shape of the second hole is different from the first shape of the first hole,
In the eighth condition, the second layer structure of the second beam electrode is different from the first layer structure of the first beam electrode.

(Configuration 2)
a first electrode fixed to the base;
a first counter electrode fixed to the base;
Furthermore,
The first member further includes a first opposing beam electrode connected to the first beam,
In the third direction, the first beam is between the first opposing beam electrode and the first beam electrode,
the first electrode faces the first beam electrode,
The sensor according to configuration 1, wherein the first opposing electrode faces the first opposing beam electrode.

(Configuration 3)
further comprising a control section,
The control unit is capable of applying a drive signal including an AC component between the first electrode and the first beam electrode,
The sensor according to configuration 2, wherein the control unit is capable of detecting an electric signal generated between the first opposing electrode and the first opposing beam electrode.

(Configuration 4)
The first member includes a first opposing beam electrode and a second opposing beam electrode,
the first opposing beam electrode is connected to the first beam,
In the third direction, the first beam is between the first opposing beam electrode and the first beam electrode,
the second opposing beam electrode is connected to the second beam,
In the third direction, the second beam is between the second opposing beam electrode and the second beam electrode,
The first opposing beam electrode and the second opposing beam electrode meet at least one of the 9th condition, the 10th condition, the 11th condition, the 12th condition, the 13th condition, the 14th condition, the 15th condition, and the 16th condition. The filling,
In the ninth condition, the second opposing mass of the second opposing beam electrode is different from the first opposing mass of the first opposing beam electrode,
In the tenth condition, a second opposing thickness of the second opposing beam electrode along the first direction is different from a first opposing thickness of the first opposing beam electrode along the first direction,
In the eleventh condition, at least a portion of the second opposing material included in the second opposing beam electrode is different from at least a portion of the first opposing material included in the first opposing beam electrode,
In the twelfth condition, the second opposing size of the second opposing hole included in the second opposing beam electrode is different from the first opposing size of the first opposing hole included in the first opposing beam electrode,
In the thirteenth condition, the second opposing density of the second opposing holes is different from the first opposing density of the first opposing holes,
In the fourteenth condition, the second number of facing holes of the second facing hole is different from the first number of facing holes of the first facing hole,
In the fifteenth condition, the second opposing shape of the second opposing hole is different from the first opposing shape of the first opposing hole,
The sensor according to configuration 1, wherein in the sixteenth condition, the second opposing layer structure of the second opposing beam electrode is different from the first opposing layer structure of the first opposing beam electrode.

(Configuration 5)
a first electrode fixed to the base;
a first counter electrode fixed to the base;
Furthermore,
the first electrode faces the first beam electrode,
The sensor according to configuration 4, wherein the first opposing electrode faces the first opposing beam electrode.

(Configuration 6)
A control unit is further provided.
the control unit is capable of applying a drive signal including an AC component between the first electrode and the first beam electrode,
6. The sensor of claim 5, wherein the controller is capable of detecting an electrical signal generated between the first opposing electrode and the first opposing beam electrode.

(Configuration 7)
The first member further includes a first structure and a first support structure,
The first structure position of the first structure in the second direction is the first movable area position of the first movable area in the second direction, and the first beam position of the first beam in the second direction. It is between
The first connected structure position of the first connected structure in the second direction is between the first structure position and the first beam position,
The first support structure position of the first support structure in the second direction is between the first structure position and the first support area position of the first support area in the second direction. ,
The first structure includes a first part, a first other part, and a first intermediate part,
The direction from the first part to the first other part is along the third direction,
the first intermediate portion is between the first portion and the first other portion;
the first portion is connected to the first connection structure,
the first other portion is connected to the first movable region,
5. The sensor of configuration 4, wherein the first intermediate portion is connected to the first support structure.

(Configuration 8)
The first member further includes a third structure and a third support structure,
The third structure position of the third structure in the second direction is the second beam position of the second beam in the second direction, and the second movable area position of the second movable area in the second direction. It is between
The second connected structure position of the second connected structure in the second direction is between the second beam position and the third structure position,
a third support structure position of the third support structure in the second direction is between the first support area position and the third structure position;
The third structure includes a third portion, a third other portion, and a third intermediate portion,
The direction from the third portion to the third other portion is along the third direction,
The third intermediate portion is between the third portion and the third other portion,
the third portion is connected to the second connection structure,
the third other portion is connected to the second movable region,
8. The sensor according to configuration 7, wherein the third intermediate portion is connected to the third support structure.

(Configuration 9)
The first member further includes a second structure and a second support structure,
The second structure position of the second structure in the second direction is between the first movable region position and the first beam position,
a second support structure position of the second support structure in the second direction is between the second structure position and the first support area position;
The second structure includes a second portion, a second other portion, and a second intermediate portion,
The direction from the second other portion to the second portion is along the third direction,
the second intermediate portion is between the second other portion and the second portion;
the second portion is connected to the first connection structure,
the second other portion is connected to the first movable region,
the second intermediate portion is connected to the second support structure;
9. The sensor of configuration 8, wherein in the third direction, the first connection structure is between at least a portion of the second support structure and at least a portion of the first support structure.

(Configuration 10)
The first member includes a fourth structure and a fourth support structure,
a fourth structure position of the fourth structure in the second direction is between the second beam position and the second movable region position;
a fourth support structure position of the fourth support structure in the second direction is between the first support area position and the fourth structure position;
The fourth structure includes a fourth portion, a fourth other portion, and a fourth intermediate portion,
The direction from the fourth other portion to the fourth portion is along the third direction,
The fourth intermediate portion is between the fourth other portion and the fourth portion,
the fourth portion is connected to the second connection structure,
the fourth other portion is connected to the second movable region,
the fourth intermediate portion is connected to the fourth support structure;
10. The sensor according to configuration 9, wherein in the third direction, the second connection structure is between at least a portion of the fourth support structure and at least a portion of the third support structure.

(Configuration 11)
The first member further includes a first structure and a first support structure,
The first structure position of the first structure in the second direction is the first movable area position of the first movable area in the second direction, and the first beam position of the first beam in the second direction. It is between
The first connected structure position of the first connected structure in the second direction is between the first structure position and the first beam position,
The first support structure position of the first support structure in the second direction is between the first structure position and the first support area position of the first support area in the second direction. ,
The first structure includes a first part, a first other part, and a first intermediate part,
The direction from the first part to the first other part is along the third direction,
the first intermediate portion is between the first portion and the first other portion;
the first portion is connected to the first connection structure,
the first other portion is connected to the first movable region,
the first intermediate portion is connected to the first support structure;
The first member includes a first opposing beam, a second opposing beam, a first opposing beam electrode, and a second opposing beam electrode,
The first opposing beam and the second opposing beam extend along the second direction,
The first opposing beam includes a first opposing end and a first opposing end, the first opposing end is connected to the first connection structure, and the first opposing end is connected to the first supporting area. connected,
The second opposing beam includes a second opposing end and a second opposing end, the second opposing end is connected to the second connection structure, and the second opposing end is connected to the first support area. connected,
the first opposing beam electrode is connected to the first opposing beam,
In the third direction, the first opposing beam is between the first opposing beam electrode and the first beam electrode,
In the third direction, the first beam is between the first opposing beam and the first beam electrode,
the second opposing beam electrode is connected to the second opposing beam;
In the third direction, the second opposing beam is between the second opposing beam electrode and the second beam electrode,
In the third direction, the second beam is between the second opposing beam and the second beam electrode,
The first opposing beam electrode and the second opposing beam electrode meet at least one of the ninth condition, the tenth condition, the eleventh condition, the twelfth condition, the thirteenth condition, the fourteenth condition, the fifteenth condition, and the sixteenth condition. The filling,
In the ninth condition, the second opposing mass of the second opposing beam electrode is different from the first opposing mass of the first opposing beam electrode,
In the tenth condition, a second opposing thickness of the second opposing beam electrode along the first direction is different from a first opposing thickness of the first opposing beam electrode along the first direction,
In the eleventh condition, at least a portion of the second opposing material included in the second opposing beam electrode is different from at least a portion of the first opposing material included in the first opposing beam electrode,
In the twelfth condition, the second opposing size of the second opposing hole included in the second opposing beam electrode is different from the first opposing size of the first opposing hole included in the first opposing beam electrode,
In the thirteenth condition, the second opposing density of the second opposing holes is different from the first opposing density of the first opposing holes,
In the fourteenth condition, the second number of facing holes of the second facing hole is different from the first number of facing holes of the first facing hole,
In the fifteenth condition, the second opposing shape of the second opposing hole is different from the first opposing shape of the first opposing hole,
The sensor according to Configuration 1, wherein in the sixteenth condition, the second opposing layer structure of the second opposing beam electrode is different from the first opposing layer structure of the first opposing beam electrode.

(Configuration 12)
The first member further includes a third structure and a third support structure,
The third structure position of the third structure in the second direction is the second beam position of the second beam in the second direction, and the second movable area position of the second movable area in the second direction. It is between
The second connected structure position of the second connected structure in the second direction is between the second beam position and the third structure position,
a third support structure position of the third support structure in the second direction is between the first support area position and the third structure position;
The third structure includes a third portion, a third other portion, and a third intermediate portion,
The direction from the third portion to the third other portion is along the third direction,
The third intermediate portion is between the third portion and the third other portion,
the third portion is connected to the second connection structure,
the third other portion is connected to the second movable region,
the third intermediate portion is connected to the third support structure;
The first member further includes a second structure and a second support structure,
The second structure position of the second structure in the second direction is between the first movable region position and the first beam position,
a second support structure position of the second support structure in the second direction is between the second structure position and the first support area position;
The second structure includes a second portion, a second other portion, and a second intermediate portion,
The direction from the second other portion to the second portion is along the third direction,
the second intermediate portion is between the second other portion and the second portion;
the second portion is connected to the first connection structure,
the second other portion is connected to the first movable region,
the second intermediate portion is connected to the second support structure;
12. The sensor of configuration 11, wherein in the third direction, the first connecting structure is between at least a portion of the second support structure and at least a portion of the first support structure.

(Configuration 13)
The first member includes a fourth structure and a fourth support structure,
a fourth structure position of the fourth structure in the second direction is between the second beam position and the second movable region position;
a fourth support structure position of the fourth support structure in the second direction is between the first support area position and the fourth structure position;
The fourth structure includes a fourth portion, a fourth other portion, and a fourth intermediate portion,
The direction from the fourth other portion to the fourth portion is along the third direction,
The fourth intermediate portion is between the fourth other portion and the fourth portion,
the fourth portion is connected to the second connection structure,
the fourth other portion is connected to the second movable region,
the fourth intermediate portion is connected to the fourth support structure;
13. The sensor of configuration 12, wherein in the third direction, the second connection structure is between at least a portion of the fourth support structure and at least a portion of the third support structure.

(Configuration 14)
a first electrode fixed to the base;
a first counter electrode fixed to the base;
Furthermore,
the first electrode faces the first beam electrode,
14. The sensor according to configuration 13, wherein the first opposing electrode faces the first opposing beam electrode.

(Configuration 15)
further comprising a control section,
The control unit is capable of applying a drive signal including an AC component between the first electrode and the first beam electrode,
15. The sensor according to configuration 14, wherein the control unit is capable of detecting an electrical signal generated between the first opposing electrode and the first opposing beam electrode.

(Configuration 16)
The first beam electrode is
a first extending portion extending along the second direction;
a first connection part that connects the first extension part to the first beam;
The sensor according to any one of configurations 1 to 15, comprising:

(Configuration 17)
A plurality of the first extension portions are provided,
the first connection portion connects the first extension portions to each other;
one of the plurality of first extension portions is between the first beam and another of the plurality of first extension portions;
The sensor of configuration 16, wherein the length of one of the plurality of first extension portions along the second direction is longer than the length of another of the plurality of first extension portions along the second direction.

(Configuration 18)
The first outer shape of the first planar shape of the first beam electrode in the first plane including the second direction and the third direction is the second outer shape of the second planar shape of the second beam electrode in the first plane. 18. The sensor according to any one of configurations 1-17, substantially the same as.

(Configuration 19)
According to configuration 2, the first opposing beam electrode is line symmetrical to the first beam electrode with respect to an axis passing through the first connection structure and the second connection structure and extending in the second direction. sensor.

(Configuration 20)
The sensor according to any one of configurations 1 to 19,
a circuit control unit capable of controlling a circuit based on a signal obtained from the sensor;
Electronic equipment with.

(Configuration 21)
A base body;
a first support portion fixed to the base;
a second support fixed to the base;
a third support portion fixed to the base;
a first member supported by the first support part, the second support part, and the third support part;
Equipped with
a gap is provided between the base body and the first member,
The first member includes a first beam, a second beam, a first beam electrode, and a second beam electrode,
The first beam and the second beam extend along a second direction intersecting the first direction from the base to the first support,
The first support part is between the second support part and the third support part in the second direction,
the first beam is supported by the second support part and the first support part,
The second beam is supported by the first support part and the third support part,
the first beam electrode is connected to the first beam,
a third direction from the first beam to the first beam electrode intersects a plane including the first direction and the second direction;
the second beam electrode is connected to the second beam,
The direction from the second beam to the second beam electrode is along the third direction,
The first beam electrode and the second beam electrode satisfy at least one of the first condition, the second condition, the third condition, the fourth condition, the fifth condition, the sixth condition, the seventh condition, and the eighth condition. ,
In the first condition, the second mass of the second beam electrode is different from the first mass of the first beam electrode,
In the second condition, a second thickness of the second beam electrode along the first direction is different from a first thickness of the first beam electrode along the first direction,
In the third condition, at least a portion of the second material contained in the second beam electrode is different from at least a portion of the first material contained in the first beam electrode,
In the fourth condition, the second size of the second hole included in the second beam electrode is different from the first size of the first hole included in the first beam electrode,
In the fifth condition, the second density of the second hole is different from the first density of the first hole,
In the sixth condition, the second number of the second holes is different from the first number of the first holes,
In the seventh condition, the second shape of the second hole is different from the first shape of the first hole,
In the eighth condition, the second layer structure of the second beam electrode is different from the first layer structure of the first beam electrode.

(Configuration 22)
The first member further includes a first support region, a second support region, a third support region, a first movable region, a second movable region, a first connection structure, and a second connection structure,
The first support part is between the base body and the first support area in the first direction,
The second support part is between the base body and the second support area in the first direction,
The third support part is between the base body and the third support area in the first direction,
The first support area is supported by the first support part,
The second support area is supported by the second support part,
The third support area is supported by the third support part,
In the second direction, the second support area is between the first movable area and the first beam,
In the second direction, the first support region is between the first beam and the second beam,
In the second direction, the third support area is between the second beam and the second movable area,
the first connection structure is supported by the second support area;
The first beam is supported by the first connection structure and the first support area,
the second connection structure is supported by the third support area;
22. The sensor according to configuration 21, wherein the second beam is supported by the first support region and the second connection structure.

(Configuration 23)
a first electrode fixed to the base;
a first counter electrode fixed to the base;
Furthermore,
The first member further includes a first opposing beam electrode connected to the first beam,
In the third direction, the first beam is between the first opposing beam electrode and the first beam electrode,
the first electrode faces the first beam electrode,
23. The sensor according to configuration 22, wherein the first opposing electrode faces the first opposing beam electrode.

(Configuration 24)
further comprising a control section,
The control unit is capable of applying a drive signal including an AC component between the first electrode and the first beam electrode,
24. The sensor according to configuration 23, wherein the control unit is capable of detecting an electrical signal generated between the first opposing electrode and the first opposing beam electrode.

(Configuration 25)
The first member includes a first opposing beam electrode and a second opposing beam electrode,
the first opposing beam electrode is connected to the first beam,
In the third direction, the first beam is between the first opposing beam electrode and the first beam electrode,
the second opposing beam electrode is connected to the second beam,
In the third direction, the second beam is between the second opposing beam electrode and the second beam electrode,
The first opposing beam electrode and the second opposing beam electrode meet at least one of the ninth condition, the tenth condition, the eleventh condition, the twelfth condition, the thirteenth condition, the fourteenth condition, the fifteenth condition, and the sixteenth condition. The filling,
In the ninth condition, the second opposing mass of the second opposing beam electrode is different from the first opposing mass of the first opposing beam electrode,
In the tenth condition, a second opposing thickness of the second opposing beam electrode along the first direction is different from a first opposing thickness of the first opposing beam electrode along the first direction,
In the eleventh condition, at least a portion of the second opposing material included in the second opposing beam electrode is different from at least a portion of the first opposing material included in the first opposing beam electrode,
In the twelfth condition, the second opposing size of the second opposing hole included in the second opposing beam electrode is different from the first opposing size of the first opposing hole included in the first opposing beam electrode,
In the thirteenth condition, the second opposing density of the second opposing holes is different from the first opposing density of the first opposing holes,
In the fourteenth condition, the second number of facing holes of the second facing hole is different from the first number of facing holes of the first facing hole,
In the fifteenth condition, the second opposing shape of the second opposing hole is different from the first opposing shape of the first opposing hole,
23. The sensor according to configuration 22, wherein in the sixteenth condition, the second opposing layer structure of the second opposing beam electrode is different from the first opposing layer structure of the first opposing beam electrode.

(Configuration 26)
The first member further includes a third movable region and a first structure,
the first beam electrode is between the first beam and the third movable region in the third direction;
The first structure includes a first part, a first other part, and a first intermediate part,
The direction from the first part to the first other part is along the third direction,
the first intermediate portion is between the first portion and the first other portion;
the first portion is connected to the first connection structure,
the first other portion is connected to the third movable region,
the first intermediate portion is connected to the third support region;
The first member further includes a third structure,
The third structure includes a third portion, a third other portion, and a third intermediate portion,
The direction from the third portion to the third other portion is along the third direction,
The third intermediate portion is between the third portion and the third other portion,
the third portion is connected to the second connection structure,
the third other portion is connected to the third movable region,
the third intermediate portion is connected to the third support region;
The first member further includes a fourth movable region and a second structure,
the first opposing beam electrode is between the fourth movable region and the first beam in the third direction,
The second structure includes a second portion, a second other portion, and a second intermediate portion,
The direction from the second other portion to the second portion is along the third direction,
the second intermediate portion is between the second other portion and the second portion;
the second portion is connected to the first connection structure,
the second other portion is connected to the fourth movable region,
the second intermediate portion is connected to the second support region;
The first member further includes a fourth structure,
The fourth structure includes a fourth portion, a fourth other portion, and a fourth intermediate portion,
The direction from the fourth other portion to the fourth portion is along the third direction,
The fourth intermediate portion is between the fourth other portion and the fourth portion,
the fourth portion is connected to the second connection structure,
the fourth other portion is connected to the fourth movable region,
26. The sensor of configuration 25, wherein the fourth intermediate portion is connected to the third support region.

(Configuration 27)
The first member further includes a first support structure, a second support structure, a third support structure, and a fourth support structure,
the first support structure and the second support structure are connected to the second support region;
The second support region is between the first support structure and the second support structure in the third direction,
The first movable region is supported by the first support structure and the second support structure,
the third support structure and the fourth support structure are connected to the third support region,
The third support region is between the third support structure and the fourth support structure in the third direction,
27. The sensor according to configuration 26, wherein the second movable region is supported by the third support structure and the fourth support structure.

(Configuration 28)
The first member further includes a first opposing beam, a second opposing beam, a first opposing beam electrode, and a second opposing beam electrode,
The first opposing beam and the second opposing beam extend along the second direction,
the first opposing beam is supported by the second support part and the first support part,
The second opposing beam is supported by the first support part and the third support part,
the first opposing beam electrode is connected to the first opposing beam,
The direction from the first opposing beam electrode to the first opposing beam is along the third direction,
the second opposing beam electrode is connected to the second opposing beam;
22. The sensor according to configuration 21, wherein the direction from the second opposing beam electrode to the second opposing beam is along the third direction.

(Configuration 29)
The first beam electrode is
a first extending portion extending along the second direction;
a first connection part that connects the first extension part to the first beam;
29. The sensor according to any one of configurations 21-28, comprising:

(Configuration 30)
A plurality of the first extension parts are provided,
The first connecting portion connects the plurality of first extending portions to each other,
One of the plurality of first extension parts is between the first beam and another one of the plurality of first extension parts,
The length of the one of the plurality of first extending parts along the second direction is longer than the length of the other one of the plurality of first extending parts along the second direction. 29. The sensor according to 29.

(Configuration 31)
The sensor according to any one of configurations 21 to 30;
a circuit control unit capable of controlling a circuit based on a signal obtained from the sensor;
Electronic equipment with.

FIG. 15 is a schematic plan view illustrating the sensor according to the first embodiment.
As shown in FIG. 15, in the sensor 110A according to the embodiment, at least a portion of the first electrode 51 is located between the first beam 31 and the first beam electrode 31E in the third direction D3. At least a portion of the second electrode 52 is located between the second beam 32 and the second beam electrode 32E in the third direction D3. At least a portion of the first opposing electrode 51A is located between the first beam 31 and the first opposing beam electrode 31AE in the third direction D3. At least a portion of the second opposing electrode 52A is located between the second beam 32 and the second opposing beam electrode 32AE in the third direction D3. The configuration of the sensor 110A other than this may be the same as the configuration of the sensor 110.

For example, in the sensor 120 (see FIG. 10), at least a portion of the first electrode 51 may be provided between the first beam 31 and the first beam electrode 31E in the third direction D3. At least a portion of the second electrode 52 may be provided between the second beam 32 and the second beam electrode 32E in the third direction D3. At least a portion of the first opposing electrode 51A may be provided between the first beam 31 and the first opposing beam electrode 31AE in the third direction D3. At least a portion of the second opposing electrode 52A may be provided between the second beam 32 and the second opposing beam electrode 32AE in the third direction D3.

FIG. 16 is a schematic plan view illustrating the sensor according to the first embodiment.
As shown in FIG. 16, in the sensor 114A according to the embodiment, the first extending part electrode 51P, the second extending part electrode 52P, the first opposing extending part electrode 51AP, and the second opposing extending part electrode 52AP It's good that it is provided. The configuration of the sensor 114A other than this may be the same as the configuration of the sensor 114.

At least a portion of the first extension electrode 51P is located between the plurality of parts (the plurality of first extension parts 31Ea) included in the first beam electrode 31E in the third direction D3. At least a portion of the second extension electrode 52P is located between the plurality of portions included in the second beam electrode 32E in the third direction D3. At least a portion of the first opposing extension electrode 51AP is located between a plurality of portions included in the first opposing beam electrode 31AE in the third direction D3. At least a portion of the second opposing extension electrode 52AP is located between a plurality of portions included in the second opposing beam electrode 32AE in the third direction D3.

Each of the first extension electrode 51P, the second extension electrode 52P, the first opposing extension electrode 51AP, and the second opposing extension electrode 52AP may be electrically connected to the control unit 70. .

(Third embodiment)
FIG. 17 is a schematic plan view illustrating a sensor according to the third embodiment.
FIG. 18 is a schematic cross-sectional view illustrating a sensor according to the third embodiment.
FIG. 18 is a sectional view taken along line A1-A2 in FIG. 17.

As shown in FIGS. 17 and 18, the sensor 130 according to the embodiment includes a base 50S, a first support section 10S, a second support section 20S, a third support section 30S, and a first member 10M. The first support part 10S, the second support part 20S, and the third support part 30S are fixed to the base body 50S. The first member 10M is supported by the first support section 10S, the second support section 20S, and the third support section 30S. A gap g1 is provided between the base body 50S and the first member 10M.

As shown in FIG. 17, the first member 10M includes a first beam 31, a second beam 32, a first beam electrode 31E, and a second beam electrode 32E.

The first beam 31 and the second beam 32 extend along the second direction D2. The second direction D2 intersects the first direction D1 from the base 50S to the first support portion 10S.

The first support section 10S is located between the second support section 20S and the third support section 30S in the second direction D2. The first beam 31 is supported by the second support section 20S and the first support section 10S. The second beam 32 is supported by the first support section 10S and the third support section 30S.

The first beam electrode 31E is connected to the first beam 31. The third direction D3 from the first beam 31 to the first beam electrode 31E intersects a plane including the first direction D1 and the second direction D2. The second beam electrode 32E is connected to the second beam 32. The direction from the second beam 32 to the second beam electrode 32E is along the third direction D3.

The first beam electrode 31E and the second beam electrode 32E meet at least one of the first condition, second condition, third condition, fourth condition, fifth condition, sixth condition, seventh condition, and eighth condition. satisfy.

In the sensor 130, this causes a difference in resonance frequency, for example, between the first beam 31 and the second beam 32. This expands the dynamic range of detection. A sensor with improved characteristics can be provided.

As shown in FIG. 17, in the sensor 130, the first member 10M includes a first support area 10Ms, a second support area 20Ms, a third support area 30Ms, a first movable area 10Ma, a second movable area 10Mb, and a first connection. It may further include a structure 21c and a second connection structure 22c.

The first support portion 10S is located between the base body 50S and the first support region 10Ms in the first direction D1. The second support portion 20S is located between the base body 50S and the second support region 20Ms in the first direction D1. The third support portion 30S is located between the base body 50S and the third support region 30Ms in the first direction D1. The first support region 10Ms is supported by the first support section 10S. The second support region 20Ms is supported by the second support section 20S. The third support region 30Ms is supported by the third support section 30S.

In the second direction D2, the second support area 20Ms is between the first movable area 10Ma and the first beam 31. In the second direction D2, the first support region 10Ms is between the first beam 31 and the second beam 32. In the second direction D2, the third support region 30Ms is between the second beam 32 and the second movable region 10Mb.

The first connection structure 21c is supported by the second support region 20Ms. The first beam 31 is supported by the first connection structure 21c and the first support region 10Ms. The second connection structure 22c is supported by the third support region 30Ms. The second beam 32 is supported by the first support region 10Ms and the second connection structure 22c.

The sensor 130 may include a first electrode 51 and a first opposing electrode 51A. The first electrode 51 and the first opposing electrode 51A are fixed to the base 50S.

The first member 10M includes a first opposing beam electrode 31AE. The first opposing beam electrode 31AE is connected to the first beam 31. In the third direction D3, the first beam 31 is between the first opposing beam electrode 31AE and the first beam electrode 31E. The first electrode 51 faces the first beam electrode 31E. The first opposing electrode 51A faces the first opposing beam electrode 31AE.

The sensor 130 may include a controller 70 (see FIG. 3). The control unit 70 can apply a drive signal including an AC component between the first electrode 51 and the first beam electrode 31E. For example, the control unit 70 can detect an electrical signal generated between the first opposing electrode 51A and the first opposing beam electrode 31AE.

The first member 10M may include a first opposing beam electrode 31AE and a second opposing beam electrode 32AE. The first opposing beam electrode 31AE is connected to the first beam 31. In the third direction D3, the first beam 31 is between the first opposing beam electrode 31AE and the first beam electrode 31E. The second opposing beam electrode 32AE is connected to the second beam 32. In the third direction D3, the second beam 32 is between the second opposing beam electrode 32AE and the second beam electrode 32E.

The first opposing beam electrode 31AE and the second opposing beam electrode 32AE, for example, satisfy at least one of the above 9th condition, 10th condition, 11th condition, 12th condition, 13th condition, 14th condition, 15th condition, and 16th condition.

In the sensor 130, the first member 10M further includes a third movable region 10Mc and a first structure 21. The first beam electrode 31E is located between the first beam 31 and the third movable region 10Mc in the third direction D3.

The first structure 21 includes a first portion 21e, a first other portion 21f, and a first intermediate portion 21m. The direction from the first portion 21e to the first other portion 21f is along the third direction D3. The first intermediate portion 21m is between the first portion 21e and the first other portion 21f. The first portion 21e is connected to the first connection structure 21c. The first other portion 21f is connected to the third movable region 10Mc. The first intermediate portion 21m is connected to the second support region 20Ms.

The first member 10M may further include a third structure 23. The third structure 23 includes a third portion 23e, a third other portion 23f, and a third intermediate portion 23m. The direction from the third portion 23e to the third other portion 23f is along the third direction D3. The third intermediate portion 23m is between the third portion 23e and the third other portion 23f. The third portion 23e is connected to the second connection structure 22c. The third other portion 23f is connected to the third movable region 10Mc. The third intermediate portion 23m is connected to the third support region 30Ms.

The first member 10M may further include a fourth movable region 10Md and a second structure 22. The first opposing beam electrode 31AE is located between the fourth movable region 10Md and the first beam 31 in the third direction D3.

The second structure 22 includes a second portion 22e, a second other portion 22f, and a second intermediate portion 22m. The direction from the second other portion 22f to the second portion 22e is along the third direction D3. The second intermediate portion 22m is located between the second other portion 22f and the second portion 22e. The second portion 22e is connected to the first connection structure 21c. The second other portion 22f is connected to the fourth movable region 10Md. The second intermediate portion 22m is connected to the second support region 20Ms.

The first member 10M may further include a fourth structure 24. The fourth structure 24 includes a fourth portion 24e, a fourth other portion 24f, and a fourth intermediate portion 24m. The direction from the fourth other portion 24f to the fourth portion 24e is along the third direction D3. The fourth intermediate portion 24m is located between the fourth other portion 24f and the fourth portion 24e. The fourth portion 24e is connected to the second connection structure 22c. The fourth other portion 24f is connected to the fourth movable region 10Md. The fourth intermediate portion 24m is connected to the third support region 30Ms.

As shown in FIG. 17, the first member 10M may further include a first support structure 11S, a second support structure 12S, a third support structure 13S, and a fourth support structure 14S. The first support structure 11S and the second support structure 12S are connected to the second support region 20Ms. The second support region 20Ms is located between the first support structure 11S and the second support structure 12S in the third direction D3. The first movable region 10Ma is supported by the first support structure 11S and the second support structure 12S.

The third support structure 13S and the fourth support structure 14S are connected to the third support region 30Ms. The third support region 30Ms is located between the third support structure 13S and the fourth support structure 14S in the third direction D3. The second movable region 10Mb is supported by the third support structure 13S and the fourth support structure 14S.

As shown in FIG. 17, the first beam electrode 31E includes a first extending portion 31Ea and a first connecting portion 31Ex. The first extending portion 31Ea extends along the second direction D2. The first connecting portion 31Ex connects the first extending portion 31Ea to the first beam 31. The configuration of the first beam electrode 31E may be applied to the first opposing beam electrode 31AE, the second beam electrode 32E, and the second opposing beam electrode 32AE.

FIG. 19 is a schematic plan view illustrating a sensor according to the third embodiment.
As shown in FIG. 19, in the sensor 131 according to the embodiment, a plurality of first extending portions 31Ea are provided. The configuration of the sensor 131 other than this may be the same as the configuration of the sensor 130.

The first connecting portion 31Ex connects the plurality of first extending portions 31Ea to each other. One of the plurality of first extension parts 31Ea is between the first beam 31 and another one of the plurality of first extension parts 31Ea. The length of one of the plurality of first extension parts 31Ea along the second direction D2 is longer than the length of another one of the plurality of first extension parts 31Ea along the second direction D2. .

FIG. 20 is a schematic plan view illustrating a sensor according to the third embodiment.
As shown in FIG. 20, in the sensor 132 according to the embodiment, the first member 10M further includes a first opposing beam 31A, a second opposing beam 32A, a first opposing beam electrode 31AE, and a second opposing beam electrode 32AE. The configuration of the sensor 132 other than this may be the same as the configuration of the sensor 130.

The first opposing beam 31A and the second opposing beam 32A extend along the second direction D2. The first opposing beam 31A is supported by the second support portion 20S (second support region 20Ms) and the first support portion 10S (first support region 10Ms). The second opposing beam 32A is supported by the first support portion 10S (first support region 10Ms) and the third support portion 30S (third support region 30Ms).

The first opposing beam electrode 31AE is connected to the first opposing beam 31A. The direction from the first opposing beam electrode 31AE to the first opposing beam 31A is along the third direction D3. The second opposing beam electrode 32AE is connected to the second opposing beam 32A. The direction from the second opposing beam electrode 32AE to the second opposing beam 32A is along the third direction D3.

FIG. 21 is a schematic plan view illustrating a sensor according to the third embodiment.
As shown in FIG. 21, in the sensor 133 according to the embodiment, a plurality of first extending portions 31Ea are provided. The configuration of the sensor 133 other than this may be the same as the configuration of the sensor 132.

It is also possible to provide sensors 131 to 133 with improved characteristics. Sensors 130-133 may be applied to electronic device 310 (FIG. 12).

In the embodiment, the first layer structure may be a layer structure of the first hole 31h. The second layer structure may be a layer structure of the second hole 32h. The first opposing layer structure may be a layer structure of the first opposing hole 31Ah. The second opposing layer structure may be a layer structure of the second opposing hole 32Ah.

According to embodiments, a sensor and an electronic device with improved characteristics are provided.

The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, with regard to the specific configuration of each element included in the sensor, such as the base, the support section, the first member, and the control section, those skilled in the art can carry out the present invention in the same manner by appropriately selecting from the known range, and It is included in the scope of the present invention as long as the above effects can be obtained.

Further, a combination of any two or more elements of each specific example to the extent technically possible is also included within the scope of the present invention as long as it encompasses the gist of the present invention.

In addition, all other sensors and electronic devices that can be implemented by appropriately changing the design by those skilled in the art based on the sensors and electronic devices described above as embodiments of the present invention are also included in the present invention, as long as they include the gist of the present invention. belongs to the range of

In addition, within the scope of the concept of this invention, a person skilled in the art may conceive of various modifications and alterations, and it is understood that these modifications and alterations also fall within the scope of this invention.

Although several embodiments of the invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included within the scope and gist of the invention, as well as within the scope of the invention described in the claims and its equivalents.

10M: first member,
10 Ma to 10 Md: first to fourth movable areas,
10Ms, 20Ms, 30Ms: first to third support areas,
10S, 20S, 30S: first to third support parts,
11A to 14A: first to fourth movable area connection parts,
11S to 14S: first to fourth support structures,
21 to 24: first to fourth structures,
21c, 22c: first and second connection structures,
21e to 24e: 1st to 4th parts,
21f to 24f: 1st to 4th other parts,
21m to 24m: 1st to 4th intermediate part,
31, 32: first and second beams,
31A, 32A: first and second opposing beams,
31AE, 32AE: first and second opposing beam electrodes,
31AEa, 32AEa: first and second opposing extension parts,
31AEx, 32AEx: first and second opposing connection parts,
31Ae, 32Ae: first and second opposing ends,
31Af, 32Af: first and second opposite ends,
31Ah, 32Ah: first and second opposing holes,
31E, 32E: first and second beam electrodes,
31Ea, 32Ea: first and second extension parts,
31Ex, 32Ex: first and second connection parts,
31e, 32e: first and second ends,
31f, 32f: first and second other ends,
31h, 32h: first hole, second hole,
32F: metal layer,
50S: Substrate,
51, 52: first and second electrodes,
51A, 52A: first and second opposing electrodes,
51P, 52P: first and second extension part electrodes 51AP, 52AP: first and second opposing extension part electrodes 70: control part,
110-114, 110A, 114A, 120, 121, 130-133: sensor,
170: circuit control section,
180: circuit,
185: Drive device,
310: Electronic device,
400: road,
410: slope surface,
420: Transmission/reception unit,
430: sensor,
440: Pier,
450: Main digit,
460: Bridge,
470: River,
D1 to D3: first to third directions,
S1: signal,
g1: Gap

Claims (20)

A base body;
a first support portion fixed to the base;
a first member supported by the first support part;
Equipped with
a gap is provided between the base body and the first member,
The first member includes a first support region, a first connection structure, a second connection structure, a first beam, a second beam, a first beam electrode, and a second beam electrode,
The first support part is between the base body and the first support area in a first direction from the base body to the first support part,
The first support area is supported by the first support part,
The first beam and the second beam extend along a second direction intersecting the first direction,
The direction from the first connection structure to the second connection structure is along the second direction,
The first support region is between the first connection structure and the second connection structure in the second direction,
The first beam includes a first end and a first other end, the first end is connected to the first connection structure, and the first other end is connected to the first support area,
The second beam includes a second end and a second other end, the second end is connected to the second connection structure, and the second other end is connected to the first support area,
the first beam electrode is connected to the first beam,
a third direction from the first beam to the first beam electrode intersects a plane including the first direction and the second direction;
the second beam electrode is connected to the second beam,
The direction from the second beam to the second beam electrode is along the third direction,
The first beam electrode and the second beam electrode satisfy at least one of the first condition, the second condition, the third condition, the fourth condition, the fifth condition, the sixth condition, the seventh condition, and the eighth condition. ,
In the first condition, the second mass of the second beam electrode is different from the first mass of the first beam electrode,
In the second condition, a second thickness of the second beam electrode along the first direction is different from a first thickness of the first beam electrode along the first direction,
In the third condition, at least a portion of the second material contained in the second beam electrode is different from at least a portion of the first material contained in the first beam electrode,
In the fourth condition, the second size of the second hole included in the second beam electrode is different from the first size of the first hole included in the first beam electrode,
In the fifth condition, the second density of the second hole is different from the first density of the first hole,
In the sixth condition, the second number of the second holes is different from the first number of the first holes,
In the seventh condition, the second shape of the second hole is different from the first shape of the first hole,
In the eighth condition, the second layer structure of the second beam electrode is different from the first layer structure of the first beam electrode. The first member further includes a first movable region and a second movable region,
In the second direction, the first support region is between the first movable region and the second movable region,
the first connection structure is supported by the first movable region,
the first connection structure is located between the first movable region and the first support region in the second direction,
the second connection structure is supported by the second movable region;
The sensor of claim 1 , wherein the second connection structure is between the first support region and the second movable region in the second direction. a first electrode fixed to the base;
a first counter electrode fixed to the base;
Furthermore,
The first member further includes a first opposing beam electrode connected to the first beam,
In the third direction, the first beam is between the first opposing beam electrode and the first beam electrode,
the first electrode faces the first beam electrode,
The sensor according to claim 2, wherein the first opposing electrode faces the first opposing beam electrode. further comprising a control section,
The control unit is capable of applying a drive signal including an AC component between the first electrode and the first beam electrode,
The sensor according to claim 3, wherein the control section is capable of detecting an electric signal generated between the first opposing electrode and the first opposing beam electrode. The first member includes a first opposing beam electrode and a second opposing beam electrode,
the first opposing beam electrode is connected to the first beam,
In the third direction, the first beam is between the first opposing beam electrode and the first beam electrode,
the second opposing beam electrode is connected to the second beam,
In the third direction, the second beam is between the second opposing beam electrode and the second beam electrode,
The first opposing beam electrode and the second opposing beam electrode meet at least one of the ninth condition, the tenth condition, the eleventh condition, the twelfth condition, the thirteenth condition, the fourteenth condition, the fifteenth condition, and the sixteenth condition. The filling,
In the ninth condition, the second opposing mass of the second opposing beam electrode is different from the first opposing mass of the first opposing beam electrode,
In the tenth condition, a second opposing thickness of the second opposing beam electrode along the first direction is different from a first opposing thickness of the first opposing beam electrode along the first direction,
In the eleventh condition, at least a portion of the second opposing material included in the second opposing beam electrode is different from at least a portion of the first opposing material included in the first opposing beam electrode,
In the twelfth condition, the second opposing size of the second opposing hole included in the second opposing beam electrode is different from the first opposing size of the first opposing hole included in the first opposing beam electrode,
In the thirteenth condition, the second opposing density of the second opposing holes is different from the first opposing density of the first opposing holes,
In the fourteenth condition, the second number of facing holes of the second facing hole is different from the first number of facing holes of the first facing hole,
In the fifteenth condition, the second opposing shape of the second opposing hole is different from the first opposing shape of the first opposing hole,
3. The sensor according to claim 2, wherein in the sixteenth condition, the second opposing layer structure of the second opposing beam electrode is different from the first opposing layer structure of the first opposing beam electrode. The first member further includes a first structure and a first support structure,
The first structure position of the first structure in the second direction is the first movable area position of the first movable area in the second direction, and the first beam position of the first beam in the second direction. It is between
The first connected structure position of the first connected structure in the second direction is between the first structure position and the first beam position,
The first support structure position of the first support structure in the second direction is between the first structure position and the first support area position of the first support area in the second direction. ,
The first structure includes a first part, a first other part, and a first intermediate part,
The direction from the first part to the first other part is along the third direction,
the first intermediate portion is between the first portion and the first other portion;
the first portion is connected to the first connection structure,
the first other portion is connected to the first movable region,
6. The sensor of claim 5, wherein the first intermediate portion is connected to the first support structure. The first member further includes a third structure and a third support structure,
The third structure position of the third structure in the second direction is the second beam position of the second beam in the second direction, and the second movable area position of the second movable area in the second direction. It is between
The second connected structure position of the second connected structure in the second direction is between the second beam position and the third structure position,
a third support structure position of the third support structure in the second direction is between the first support area position and the third structure position;
The third structure includes a third portion, a third other portion, and a third intermediate portion,
The direction from the third portion to the third other portion is along the third direction,
The third intermediate portion is between the third portion and the third other portion,
the third portion is connected to the second connection structure,
the third other portion is connected to the second movable region,
7. The sensor of claim 6, wherein the third intermediate portion is connected to the third support structure. The first member further includes a second structure and a second support structure,
The second structure position of the second structure in the second direction is between the first movable region position and the first beam position,
a second support structure position of the second support structure in the second direction is between the second structure position and the first support area position;
The second structure includes a second portion, a second other portion, and a second intermediate portion,
The direction from the second other portion to the second portion is along the third direction,
the second intermediate portion is between the second other portion and the second portion;
the second portion is connected to the first connection structure,
the second other portion is connected to the first movable region,
the second intermediate portion is connected to the second support structure;
8. The sensor of claim 7, wherein in the third direction, the first connection structure is between at least a portion of the second support structure and at least a portion of the first support structure. . The first member includes a fourth structure and a fourth support structure,
a fourth structure position of the fourth structure in the second direction is between the second beam position and the second movable region position;
a fourth support structure position of the fourth support structure in the second direction is between the first support area position and the fourth structure position;
The fourth structure includes a fourth portion, a fourth other portion, and a fourth intermediate portion,
The direction from the fourth other portion to the fourth portion is along the third direction,
The fourth intermediate portion is between the fourth other portion and the fourth portion,
the fourth portion is connected to the second connection structure,
the fourth other portion is connected to the second movable region,
the fourth intermediate portion is connected to the fourth support structure;
9. The sensor according to claim 8, wherein in the third direction, the second connection structure is between at least a portion of the fourth support structure and at least a portion of the third support structure. . The first beam electrode is
a first extending portion extending along the second direction;
a first connection part that connects the first extension part to the first beam;
The sensor according to any one of claims 1 to 9, comprising: The first member further includes a first structure and a first support structure,
The first structure position of the first structure in the second direction is the first movable area position of the first movable area in the second direction, and the first beam position of the first beam in the second direction. It is between
The first connected structure position of the first connected structure in the second direction is between the first structure position and the first beam position,
The first support structure position of the first support structure in the second direction is between the first structure position and the first support area position of the first support area in the second direction. ,
The first structure includes a first part, a first other part, and a first intermediate part,
The direction from the first part to the first other part is along the third direction,
the first intermediate portion is between the first portion and the first other portion;
the first portion is connected to the first connection structure,
the first other portion is connected to the first movable region,
the first intermediate portion is connected to the first support structure;
The first member includes a first opposing beam, a second opposing beam, a first opposing beam electrode, and a second opposing beam electrode,
The first opposing beam and the second opposing beam extend along the second direction,
The first opposing beam includes a first opposing end and a first opposing end, the first opposing end is connected to the first connection structure, and the first opposing end is connected to the first supporting area. connected,
The second opposing beam includes a second opposing end and a second opposing end, the second opposing end is connected to the second connection structure, and the second opposing end is connected to the first support area. connected,
the first opposing beam electrode is connected to the first opposing beam,
In the third direction, the first opposing beam is between the first opposing beam electrode and the first beam electrode,
In the third direction, the first beam is between the first opposing beam and the first beam electrode,
the second opposing beam electrode is connected to the second opposing beam;
In the third direction, the second opposing beam is between the second opposing beam electrode and the second beam electrode,
In the third direction, the second beam is between the second opposing beam and the second beam electrode,
The first opposing beam electrode and the second opposing beam electrode meet at least one of the ninth condition, the tenth condition, the eleventh condition, the twelfth condition, the thirteenth condition, the fourteenth condition, the fifteenth condition, and the sixteenth condition. The filling,
In the ninth condition, the second opposing mass of the second opposing beam electrode is different from the first opposing mass of the first opposing beam electrode,
In the tenth condition, a second opposing thickness of the second opposing beam electrode along the first direction is different from a first opposing thickness of the first opposing beam electrode along the first direction,
In the eleventh condition, at least a portion of the second opposing material included in the second opposing beam electrode is different from at least a portion of the first opposing material included in the first opposing beam electrode,
In the twelfth condition, the second opposing size of the second opposing hole included in the second opposing beam electrode is different from the first opposing size of the first opposing hole included in the first opposing beam electrode,
In the thirteenth condition, the second opposing density of the second opposing holes is different from the first opposing density of the first opposing holes,
In the fourteenth condition, the second number of facing holes of the second facing hole is different from the first number of facing holes of the first facing hole,
In the fifteenth condition, the second opposing shape of the second opposing hole is different from the first opposing shape of the first opposing hole,
3. The sensor according to claim 2, wherein in the sixteenth condition, the second opposing layer structure of the second opposing beam electrode is different from the first opposing layer structure of the first opposing beam electrode. A base body;
a first support portion fixed to the base;
a second support fixed to the base;
a third support portion fixed to the base;
a first member supported by the first support part, the second support part, and the third support part;
Equipped with
a gap is provided between the base body and the first member,
The first member includes a first beam, a second beam, a first beam electrode, and a second beam electrode,
The first beam and the second beam extend along a second direction intersecting the first direction from the base to the first support,
The first support part is between the second support part and the third support part in the second direction,
the first beam is supported by the second support part and the first support part,
The second beam is supported by the first support part and the third support part,
the first beam electrode is connected to the first beam,
a third direction from the first beam to the first beam electrode intersects a plane including the first direction and the second direction;
the second beam electrode is connected to the second beam,
The direction from the second beam to the second beam electrode is along the third direction,
The first beam electrode and the second beam electrode satisfy at least one of the first condition, the second condition, the third condition, the fourth condition, the fifth condition, the sixth condition, the seventh condition, and the eighth condition. ,
In the first condition, the second mass of the second beam electrode is different from the first mass of the first beam electrode,
In the second condition, a second thickness of the second beam electrode along the first direction is different from a first thickness of the first beam electrode along the first direction,
In the third condition, at least a portion of the second material contained in the second beam electrode is different from at least a portion of the first material contained in the first beam electrode,
In the fourth condition, the second size of the second hole included in the second beam electrode is different from the first size of the first hole included in the first beam electrode,
In the fifth condition, the second density of the second hole is different from the first density of the first hole,
In the sixth condition, the second number of the second holes is different from the first number of the first holes,
In the seventh condition, the second shape of the second hole is different from the first shape of the first hole,
In the eighth condition, the second layer structure of the second beam electrode is different from the first layer structure of the first beam electrode. The first member further includes a first support region, a second support region, a third support region, a first movable region, a second movable region, a first connection structure, and a second connection structure,
The first support part is between the base body and the first support area in the first direction,
The second support part is between the base body and the second support area in the first direction,
The third support part is between the base body and the third support area in the first direction,
The first support area is supported by the first support part,
The second support area is supported by the second support part,
The third support area is supported by the third support part,
In the second direction, the second support area is between the first movable area and the first beam,
In the second direction, the first support region is between the first beam and the second beam,
In the second direction, the third support area is between the second beam and the second movable area,
the first connection structure is supported by the second support area;
The first beam is supported by the first connection structure and the first support area,
the second connection structure is supported by the third support area;
The sensor according to claim 12, wherein the second beam is supported by the first support area and the second connection structure. a first electrode fixed to the base;
a first counter electrode fixed to the base;
Furthermore,
The first member further includes a first opposing beam electrode connected to the first beam,
In the third direction, the first beam is between the first opposing beam electrode and the first beam electrode,
the first electrode faces the first beam electrode,
The sensor according to claim 13, wherein the first opposing electrode faces the first opposing beam electrode. further comprising a control section,
The control unit is capable of applying a drive signal including an AC component between the first electrode and the first beam electrode,
The sensor according to claim 14, wherein the control section is capable of detecting an electrical signal generated between the first opposing electrode and the first opposing beam electrode. The first member includes a first opposing beam electrode and a second opposing beam electrode,
the first opposing beam electrode is connected to the first beam,
In the third direction, the first beam is between the first opposing beam electrode and the first beam electrode,
the second opposing beam electrode is connected to the second beam,
In the third direction, the second beam is between the second opposing beam electrode and the second beam electrode,
The first opposing beam electrode and the second opposing beam electrode meet at least one of the ninth condition, the tenth condition, the eleventh condition, the twelfth condition, the thirteenth condition, the fourteenth condition, the fifteenth condition, and the sixteenth condition. The filling,
In the ninth condition, the second opposing mass of the second opposing beam electrode is different from the first opposing mass of the first opposing beam electrode,
In the tenth condition, a second opposing thickness of the second opposing beam electrode along the first direction is different from a first opposing thickness of the first opposing beam electrode along the first direction,
In the eleventh condition, at least a portion of the second opposing material included in the second opposing beam electrode is different from at least a portion of the first opposing material included in the first opposing beam electrode,
In the twelfth condition, the second opposing size of the second opposing hole included in the second opposing beam electrode is different from the first opposing size of the first opposing hole included in the first opposing beam electrode,
In the thirteenth condition, the second opposing density of the second opposing holes is different from the first opposing density of the first opposing holes,
In the fourteenth condition, the second number of facing holes of the second facing hole is different from the first number of facing holes of the first facing hole,
In the fifteenth condition, the second opposing shape of the second opposing hole is different from the first opposing shape of the first opposing hole,
14. The sensor according to claim 13, wherein in the sixteenth condition, the second opposing layer structure of the second opposing beam electrode is different from the first opposing layer structure of the first opposing beam electrode. The first member further includes a third movable region and a first structure,
the first beam electrode is between the first beam and the third movable region in the third direction;
The first structure includes a first part, a first other part, and a first intermediate part,
The direction from the first part to the first other part is along the third direction,
the first intermediate portion is between the first portion and the first other portion;
the first portion is connected to the first connection structure,
the first other portion is connected to the third movable region,
the first intermediate portion is connected to the second support region;
The first member further includes a third structure,
The third structure includes a third portion, a third other portion, and a third intermediate portion,
The direction from the third portion to the third other portion is along the third direction,
The third intermediate portion is between the third portion and the third other portion,
the third portion is connected to the second connection structure,
the third other portion is connected to the third movable region,
the third intermediate portion is connected to the third support region;
The first member further includes a fourth movable region and a second structure,
the first opposing beam electrode is between the fourth movable region and the first beam in the third direction,
The second structure includes a second portion, a second other portion, and a second intermediate portion,
The direction from the second other portion to the second portion is along the third direction,
the second intermediate portion is between the second other portion and the second portion;
the second portion is connected to the first connection structure,
the second other portion is connected to the fourth movable region,
the second intermediate portion is connected to the second support region;
The first member further includes a fourth structure,
The fourth structure includes a fourth portion, a fourth other portion, and a fourth intermediate portion,
The direction from the fourth other portion to the fourth portion is along the third direction,
The fourth intermediate portion is between the fourth other portion and the fourth portion,
the fourth portion is connected to the second connection structure,
the fourth other portion is connected to the fourth movable region,
17. The sensor of claim 16, wherein the fourth intermediate portion is connected to the third support area. The first member further includes a first support structure, a second support structure, a third support structure, and a fourth support structure,
the first support structure and the second support structure are connected to the second support region;
The second support region is between the first support structure and the second support structure in the third direction,
The first movable region is supported by the first support structure and the second support structure,
the third support structure and the fourth support structure are connected to the third support region,
The third support region is between the third support structure and the fourth support structure in the third direction,
The sensor according to claim 17, wherein the second movable region is supported by the third support structure and the fourth support structure. The first member further includes a first opposing beam, a second opposing beam, a first opposing beam electrode, and a second opposing beam electrode,
The first opposing beam and the second opposing beam extend along the second direction,
the first opposing beam is supported by the second support part and the first support part,
The second opposing beam is supported by the first support part and the third support part,
the first opposing beam electrode is connected to the first opposing beam,
The direction from the first opposing beam electrode to the first opposing beam is along the third direction,
the second opposing beam electrode is connected to the second opposing beam;
The sensor according to claim 12, wherein the direction from the second opposing beam electrode to the second opposing beam is along the third direction. The sensor according to claim 1;
a circuit control unit capable of controlling a circuit based on a signal obtained from the sensor;
Electronic equipment with.

Images