JP2024004499A - Radiation device, radiative cooling device, and method for manufacturing radiation device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a radiation device that can be bent, a radiative cooling device, and a method for manufacturing a radiation device.

SOLUTION: This radiation device 100 comprises a flexible film 110, an electroconductive layer 120 provided on the flexible film 110, a semiconductor layer 130 provided on the electroconductive layer 120, and a plurality of electroconductive discs 150 that are provided on the semiconductor layer 130 and that are positioned so as to be set apart from each other.

SELECTED DRAWING: Figure 1

COPYRIGHT: (C)2024,JPO&INPIT

Description

The present disclosure relates to a radiant device, a radiant cooling device, and a method for manufacturing a radiant device.

US Pat. No. 5,300,301 discloses a selective radiative cooling structure comprising a selective emissive layer comprising a polymer and a plurality of dielectric particles dispersed within the polymer. When producing a structure in which microspheres are dispersed, the microspheres may aggregate.

Patent Document 2 discloses a radiation device using a plasmonic metamaterial. Since the radiation device is manufactured using lithography technology, it is formed on a silicon substrate having a smooth surface.

Special table 2019-515967 publication International Publication No. 2020/026345

Patent Document 2 does not disclose mounting a radiation device on a member having a curved surface.

The present disclosure provides a radiant device that can be curved, a radiant cooling apparatus, and a method of manufacturing a radiant device.

A radiation device according to one aspect of the present disclosure includes a flexible film, a conductor layer provided on the flexible film, a semiconductor layer provided on the conductor layer, and a semiconductor layer provided on the semiconductor layer. a plurality of conductor disks provided and spaced apart from each other.

According to the present disclosure, a radiant device that can be curved, a radiant cooling device, and a method for manufacturing a radiant device can be provided.

FIG. 1 is a cross-sectional view schematically showing a radiation device according to an embodiment. FIG. 2 is a plan view showing a plurality of unit constituent areas arranged in an array. FIG. 3 is a plan view showing an arrangement pattern of conductor disks in each unit configuration region. FIG. 4 is a cross-sectional view schematically showing the curved radiating device of FIG. FIG. 5 is a diagram showing a schematic configuration of a radiation cooling device according to an embodiment. FIG. 6 is a graph showing an example of an absorption spectrum of a radiating device according to an embodiment. FIGS. 7A and 7B are cross-sectional views schematically showing each step of a method for manufacturing a radiation device according to an embodiment.

[Description of embodiments of the present disclosure]
A radiation device according to one embodiment includes a flexible film, a conductive layer provided on the flexible film, a semiconductor layer provided on the conductive layer, and a semiconductor layer provided on the semiconductor layer. , and a plurality of conductor disks spaced apart from each other.

According to the above radiation device, the radiation device can be curved by curving the flexible film.

The conductor layer may be provided on the main surface of the flexible film, and the flexible film may be curved so that the main surface has a radius of curvature of 60 mm or less. In this case, the radiating device can be curved to a relatively large extent.

When the flexible film is curved so that the main surface has a radius of curvature of 60 mm, the absolute value of the dimensional change rate of each of the plurality of conductor disks and the distance between the plurality of adjacent conductor disks. The absolute value of the dimensional change rate of the interval may be 10% or less. In this case, even if the radiation device is largely curved, the dimensional change rate of each conductor disk and each interval can be reduced. Thereby, the absolute value of the shift in absorption wavelength due to dimensional change can be reduced to, for example, 5 μm or less.

The flexible film may include resin. The flexible membrane may include polyimide.

The plurality of conductor disks are arranged such that each of the plurality of unit constituent regions having the same area and the same shape has the same arrangement pattern on the main surface of the semiconductor layer, and each of the plurality of unit constituent regions has a It has a rectangular shape with each side having a length of .5 μm or more and 5.5 μm or less, and the plurality of unit constituent regions are adjacent unit constituent regions in each of two mutually orthogonal directions along the main surface. may be arranged in an array such that they have a common edge. In this case, the radiation device can selectively emit electromagnetic waves in the "atmospheric window" corresponding to a wavelength range of 4.5 μm or more and 5.5 μm or less.

The arrangement pattern is a 3×3 matrix in which three conductive disks are arranged along a first side of the rectangular shape and three conductive disks are arranged along a second side perpendicular to the first side. The nine conductor disks may include four or more types of conductor disks having different diameters. In this case, nine conductor disks can be appropriately arranged within a rectangular shape having each side having a length of 4.5 μm or more and 5.5 μm or less.

A radiation cooling device according to one embodiment includes a member having a curved surface and the radiation device, and the radiation device is provided on the member so that the flexible film faces the curved surface. . In this case, the flexible membrane can be curved to follow the curved surface.

A method for manufacturing a radiation device according to an embodiment includes the step of providing a flexible film on a substrate, and on the flexible film, a conductor layer, a semiconductor layer, and a plurality of layers arranged at a distance from each other. and a step of peeling the flexible film from the substrate.

According to the method for manufacturing a radiation device described above, a radiation device including a flexible film can be obtained.

The step of providing the flexible membrane may include adhering the flexible membrane to the substrate with an adhesive layer. In this case, misalignment of the flexible film with respect to the substrate can be suppressed.

[Details of embodiments of the present disclosure]
Embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. In the description of the drawings, the same reference numerals are used for the same or equivalent elements, and redundant description will be omitted. In the drawings, an X-axis direction, a Y-axis direction, and a Z-axis direction that intersect with each other are shown as necessary. For example, the X-axis direction, the Y-axis direction, and the Z-axis direction are orthogonal to each other.

FIG. 1 is a cross-sectional view schematically showing a radiation device according to an embodiment. The radiation device 100 shown in FIG. 1 includes a flexible film 110, a conductive layer 120 provided on the flexible film 110, a semiconductor layer 130 provided on the conductive layer 120, and and a plurality of conductor disks 150 provided thereon.

The flexible film 110 has a lower surface 110a and an upper surface 110b (principal surface) that are arranged on opposite sides in the Z-axis direction. The Z-axis direction corresponds to the thickness direction of the flexible film 110. Conductor layer 120 is provided on top surface 110b of flexible membrane 110. The conductor layer 120 has a lower surface 120a facing the upper surface 110b, and an upper surface 120b opposite to the lower surface 120a. The semiconductor layer 130 is provided on the upper surface 120b of the conductor layer 120. The semiconductor layer 130 has a lower surface 130a facing the upper surface 120b, and an upper surface 130b (principal surface) opposite to the lower surface 130a. The plurality of conductor disks 150 are provided on the upper surface 120b of the semiconductor layer 130 and are spaced apart from each other. Each conductor disk 150 has, for example, a circular shape when viewed from the Z-axis direction. A surface protection layer 140 may be provided on the upper surface 130b of the semiconductor layer 130 to cover the plurality of conductive disks 150 in order to protect the plurality of conductive disks 150 and prevent light from entering from the outside. good. The surface protection layer 140 can also function as a reflective film.

Flexible membrane 110 may include resin. Examples of resins include polyimide. The flexible film 110 may include a material having a Young's modulus of, for example, 0.5 GPa or more and 100 GPa or less. The thickness of the flexible film 110 is, for example, 1 μm or more and 3000 μm or less. The flexible film 110 may be a thin glass plate (eg, G-Leaf (registered trademark) manufactured by Nippon Electric Glass Co., Ltd.) having a thickness of, for example, 20 μm or more and 500 μm or less. The flexible film 110 can have heat resistance of, for example, 300° C. or more, and can have high resistance to organic solvents and strong acids. The average surface roughness Ra in a region of about 50 μm on the upper surface 130b of the flexible film 110 may be 5 nm or less. If needle-like protrusions with a height of about 100 nm are provided on the upper surface 130b of the flexible film 110, the needle-like protrusions can be removed by oxygen plasma treatment (ashing) or the like. In addition, the average surface roughness Ra over the entire area of the upper surface 130b of the flexible film 110 may be 500 nm or less.

Conductive layer 120 may include metal. Examples of metals include aluminum (Al), gold (Au), silver (Ag) and copper (Cu). The thickness of the conductor layer 120 may be greater than the thickness of the conductor disk 150, and may be greater than or equal to 100 nm and less than or equal to 200 nm. When the thickness of the conductor layer 120 is increased, transmission of electromagnetic waves can be suppressed.

The semiconductor layer 130 may include at least one of silicon (Si) and germanium (Ge). In this case, the absorption rate of the semiconductor layer 130 becomes small in a wavelength range shorter than 8 μm in the mid-infrared wavelength range. The thickness of the semiconductor layer 130 may be 100 nm or more and 1000 nm or less.

Each of the plurality of conductor disks 150 may include metal. Examples of metals include the same materials as the example materials of conductor layer 120. The thickness of each conductor disk 150 may be 30 nm or more and 100 nm or less in order to improve shape controllability and suppress manufacturing costs. In this case, even if the radiation characteristics change due to a change in the thickness of the conductor disk 150, a sufficient emissivity can be obtained in the wavelength range of 8 μm or more and 13 μm or less. The dimensions (diameter) of each conductive disk 150 are determined by repeated analysis using the FDTD method (Finite-difference time-domain) in the range of 0.8 μm or more and 1.5 μm or less, and the wavelength of 8 μm or more and 13 μm or less. can be selected to provide a high emissivity in the area.

FIG. 2 is a plan view showing a plurality of unit constituent areas arranged in an array. FIG. 3 is a plan view showing an arrangement pattern of conductor disks in each unit configuration area. Although the examples shown in FIGS. 2 and 3 will be described below, the arrangement pattern of the conductor disks is not limited to this example.

The plurality of conductive disks 150 may be arranged so that each of the plurality of unit constituent regions R having the same area and the same shape on the upper surface 130b of the semiconductor layer 130 has the same arrangement pattern. Each of the plurality of unit constituent regions R may have a rectangular shape with each side having a length of 4.5 μm or more and 5.5 μm or less. The lengths of two adjacent sides with one interior angle in between may be different from each other or may be equal to each other. In this example, each of the plurality of unit constituent regions R has a square shape with each side having a length of 4.5 μm or more and 5.5 μm or less. The plurality of unit constituent regions R may be arranged in an array such that adjacent unit constituent regions R have a common side in each of the mutually orthogonal X-axis direction and Y-axis direction along the upper surface 130b. The plurality of unit constituent regions R are arranged without gaps. As a result, a two-dimensional periodic structure of the arrangement pattern of the plurality of conductor disks 150 is formed on the upper surface 130b. The two-dimensional periodic structure is an infrared plasmon periodic structure that generates electromagnetic waves in the mid-infrared wavelength range. The length of one side of the unit constituent region R corresponds to the periodic pitch P of the two-dimensional periodic structure. In this example, the arrangement pattern in each unit configuration region R is that three conductor disks 150 are lined up along the first side of the rectangular shape, and three conductor disks 150 are lined up along the second side orthogonal to the first side. It is composed of nine conductor disks 150 arranged so as to correspond to a 3×3 matrix in which the disks 150 are lined up. Each of nine intersection points (lattice points) C between lines a1, a2, and a3 set at equal intervals parallel to the X-axis direction and lines b1, b2, and b3 set at equal intervals parallel to the Y-axis direction A corresponding conductor disk 150 is disposed at. The center of each conductor disk 150 coincides with each intersection point C. Lines a1, a2, and a3 are arranged in order in the Y-axis direction. Lines b1, b2, and b3 are arranged in order in the X-axis direction.

The nine conductor disks 150 arranged in one unit configuration region R include four or more types of conductor disks 150 having mutually different diameters. In this example, nine conductor disks 150a to 150i are arranged in a unit configuration region R on an intersection C of lines a1 to a3 and lines b1 to b3 so as to be spaced apart from each other. The first conductive disk 150a is arranged at the intersection C of the line a3 and the line b1. The second conductive disk 150b is arranged at the intersection C of the line a3 and the line b2. The third conductor disk 150c is arranged at the intersection C of the line a3 and the line b3. The fourth conductor disk 150d is arranged at the intersection C of the line a2 and the line b1. The fifth conductive disk 150e is arranged at the intersection C of the line a2 and the line b2. The sixth conductive disk 15Of is arranged at the intersection C of the line a2 and the line b3. The seventh conductor disk 150g is arranged at the intersection C of the line a1 and the line b1. The eighth conductor disk 150h is arranged at the intersection C of the line a1 and the line b2. The ninth conductive disk 150i is arranged at the intersection C of the line a1 and the line b3. The diameter of the first conductor disk 150a is 0.9 μm. The diameter of the second conductor disk 150b is 1.1 μm. The diameter of the third conductor disk 150c is 0.9 μm. The diameter of the fourth conductor disk 150d is 1.4 μm. The diameter of the fifth conductor disk 150e is 1.5 μm. The diameter of the sixth conductor disk 150f is 1.2 μm. The diameter of the seventh conductor disk 150g is 0.9 μm. The diameter of the eighth conductor disk 150h is 1.3 μm. The diameter of the ninth conductor disk 150i is 1.0 μm. Therefore, in this example, the nine conductive disks 150 arranged within one unit configuration region R include three conductive disks 150a, 150c, and 150g having the minimum diameter (0.9 μm). The nine conductor disks 150 are conductor disks 150a of seven types (0.9 μm, 1.0 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm) having different diameters. , 150b, 150d, 150e, 150f, 150h, and 150i. In this example, the distance between the centers of the conductor disks 150 adjacent to each other (that is, the distance between the intersection points C) is 1.7 μm, and the length of one side of the unit constituent region R corresponding to the periodic pitch P is 5.1 μm. be.

FIG. 4 is a cross-sectional view schematically showing the curved radiating device of FIG. As shown in FIG. 4, the flexible membrane 110 may be bendable such that the upper surface 110b of the flexible membrane 110 has a radius of curvature CR of 60 mm or less. In FIG. 4, the flexible film 110 is curved so that the upper surface 110b is convex, but it may be curved so that the upper surface 110b is concave, or the upper surface 110b has a convex region and a concave region. It may be curved to include both. When the flexible membrane 110 is curved around the central axis CN along the Y-axis direction, the radius of curvature CR corresponds to the distance from the central axis CN to the upper surface 110b. When the flexible membrane 110 is curved so that the upper surface 110b has a radius of curvature CR of 60 mm, the absolute value of the dimensional change rate of each of the plurality of conductor disks 150 and the distance between the plurality of adjacent conductor disks 150 The absolute value of the dimensional change rate of the interval may be 10% or less. Changes in the dimensions and spacing of each conductor disk 150 may be irreversible.

The dimensional change rate RT1 (%) of each of the plurality of conductor disks 150 can be calculated using the following formula.
RT1=(Dn2-Dn1)/Dn1×100
Dn1 represents the dimension before bending of the n-th conductor disk 150 among the k conductor disks 150 arranged in the unit configuration region R (see FIG. 1). Dn2 represents the dimension of the n-th conductor disk 150 after bending (see FIG. 4). k and n are natural numbers of 2 or more. In the example of FIGS. 2 and 3, k is 9. When the flexible film 110 is curved so that the upper surface 110b is convex, the dimensional change rate RT1 (%) becomes a positive value. On the other hand, when the flexible film 110 is curved so that the upper surface 110b is concave, the dimensional change rate RT1 (%) takes a negative value.

The dimensional change rate RT2 (%) of the spacing between a plurality of adjacent conductor disks 150 can be calculated using the following formula.
RT2=(Gn2-Gn1)/Gn1×100
Gn1 represents the dimension before bending at the n-th interval among the m intervals within the unit configuration region R (see FIG. 1). Gn2 represents the dimension after curving at the nth interval (see FIG. 4). m and n are natural numbers. In the example of FIGS. 2 and 3, m is 12. When the flexible film 110 is curved so that the upper surface 110b is convex, the dimensional change rate RT2 (%) becomes a positive value. On the other hand, when the flexible film 110 is curved so that the upper surface 110b is concave, the dimensional change rate RT2 (%) takes a negative value.

FIG. 5 is a diagram showing a schematic configuration of a radiation cooling device according to an embodiment. The radiation cooling device 10 shown in FIG. 5 is, for example, a sky radiator. The radiation cooling device 10 includes the radiation device 100 and the member 300 of this embodiment. Member 300 has a curved surface 300a. Radiating device 100 is provided on member 300 such that flexible membrane 110 faces curved surface 300a. The radiant cooling device 10 may be a radiant panel or the like having a spectrum with high emissivity in the atmospheric window wavelength band. The radiation cooling device 10 has a front surface 10a that emits electromagnetic waves in a specific wavelength range, and a back surface 10b opposite to the front surface 10a. The radiating device 100 located on the front surface 10a is located far from the building 200, while the member 300 located on the back surface 10b is located close to the building 200. The radiant cooling device 10 may be placed in the building 200 so as to be in direct or indirect contact with the air warmed by the heat source 210.

The radiation cooling device 10 can absorb the heat of the air heated by the heat source 210 within the building 200, convert it into electromagnetic waves 230 in the atmospheric window wavelength range, and emit it to the outside of the building 200. The radiative cooling device 10 loses thermal energy as thermal equilibrium with space takes place through the atmospheric window wavelength range. This lowers the temperature of the radiation cooling device 10. Since the warmed air in the building 200 is in contact with the back surface 10b of the radiation cooling device 10, the warmed air is cooled by transferring the stored thermal energy to the radiation cooling device 10. Since the cooled air is returned indoors by natural convection 220 or forced circulation within the building 200, the radiation cooling device 10 according to this embodiment can function as an air conditioner.

FIG. 6 is a graph showing an example of an absorption spectrum of a radiating device according to an embodiment. In FIG. 6, the horizontal axis indicates wavelength (μm), and the vertical axis indicates absorption rate. The absorption rate values on the vertical axis are normalized with the maximum value being 1. The graph in FIG. 6 shows the results of calculating the absorption spectrum for an example of a radiation device having the following structure. The radiating device of this example includes a 100 nm thick aluminum layer, a 500 nm thick silicon layer, and a plurality of 50 nm thick conductor disks stacked in sequence on a polyimide film. The arrangement pattern of the plurality of conductor disks is the same as the arrangement pattern in the example of FIGS. 2 and 3. From FIG. 6, it can be seen that a high absorption rate is obtained in the "atmospheric window" corresponding to the wavelength range of 8 μm or more and 13 μm or less.

According to the radiation device 100 of this embodiment, the radiation device 100 can be curved by curving the flexible film 110 as shown in FIG. Therefore, according to the radiation cooling device 10 of this embodiment, the flexible film 110 can be curved to follow the curved surface 300a of the member 300, as shown in FIG. 5, for example.

When flexible membrane 110 is bendable such that upper surface 110b has a radius of curvature CR of 60 mm or less, radiating device 100 can be curved relatively largely.

When the flexible film 110 is curved so that the upper surface 110b has a radius of curvature CR of 60 mm, the absolute value of the dimensional change rate RT1 of each of the plurality of conductor disks 150 and the plurality of adjacent conductor disks 150 The absolute value of the dimensional change rate RT2 of the interval may be 10% or less. In this case, even if the radiation device 100 is largely curved, the dimensional change rate of each conductor disk 150 and each interval can be reduced. Thereby, the absolute value of the shift in absorption wavelength due to dimensional change can be reduced to, for example, 5 μm or less. Therefore, if each conductor disk 150 and each interval are set so that the absorption wavelength is 5 μm, even if the flexible film 110 is curved, the absorption wavelength within the wavelength range of 4.5 μm or more and 5.5 μm or less can be obtained. It will be done.

When each of the plurality of unit constituent regions R has a rectangular shape with each side having a length of 4.5 μm or more and 5.5 μm or less, the radiation device 100 corresponds to a wavelength range of 4.5 μm or more and 5.5 μm or less. It is possible to selectively emit electromagnetic waves from the "atmospheric window."

When the nine conductor disks 150 are arranged to correspond to a 3×3 matrix and include four or more types of conductor disks 150 having mutually different diameters, the length is 4.5 μm or more and 5.5 μm or less Nine conductor disks 150 can be appropriately arranged within a rectangular shape having sides of .

FIGS. 7A and 7B are cross-sectional views schematically showing each step of a method for manufacturing a radiation device according to an embodiment. The radiation device 100 of this embodiment can be manufactured as follows.

First, as shown in FIG. 7(a), a flexible film 110 is provided on a substrate 400. The substrate 400 is, for example, a silicon substrate. Flexible film 110 is provided such that lower surface 110a faces substrate 400. Flexible membrane 110 may be adhered to substrate 400 by an adhesive layer 410. In this case, displacement of the flexible film 110 with respect to the substrate 400 can be suppressed. The adhesive layer 410 may have heat resistance of, for example, 300° C. or higher, and may have high resistance to organic solvents and strong acids. The adhesive layer 410 may include, for example, a silicone adhesive. An example of the flexible film 110 provided with the adhesive layer 410 is an adhesive tape (Kapton (registered trademark) adhesive tape manufactured by Teraoka Seisakusho Co., Ltd.). The flexible film 110 has, for example, a rectangular shape when viewed from the thickness direction of the flexible film 110.

After providing the flexible film 110 on the substrate 400, the upper surface 110b of the flexible film 110 may be cleaned with an alcohol-based cleaning solution. As a result, organic substances on the upper surface 110b are removed. Thereafter, the upper surface 110b may be subjected to oxygen plasma treatment. As a result, the needle-like protrusions and remaining organic matter on the upper surface 110b are removed.

Next, as shown in FIG. 7B, a conductor layer 120, a semiconductor layer 130, and a plurality of conductor disks 150 spaced apart from each other are sequentially placed on the flexible film 110. Form. The plurality of conductor disks 150 may be formed by photolithography and etching. First, a conductor layer 120 (eg, 100 nm thick) and a semiconductor layer 130 (eg, 500 nm thick) are successively deposited on the flexible film 110 by, for example, magnetron sputtering. Deposition may be performed while adjusting the temperature of the substrate 400 within a range of 150° C. or higher and 300° C. or lower. Thereby, the effect of making the conductor layer 120 and the semiconductor layer 130 denser and flattening the surface can be obtained. After that, a resist film is formed on the upper surface 130b of the semiconductor layer 130, and then stepper exposure and development are performed to form an opening pattern in the resist film. Thereafter, a conductive layer (for example, 50 nm thick) is deposited on the resist film and within the opening pattern by, for example, magnetron sputtering. Thereafter, a plurality of conductor disks 150 are obtained by removing the resist film and the conductor layer on the resist film using an organic solvent.

Next, flexible film 110 is peeled off from substrate 400. The flexible membrane 110 may be peeled from the substrate 400 by mechanically pulling from the corners of the flexible membrane 110. In this way, a radiating device 100 is obtained.

According to the method for manufacturing the radiation device 100 of this embodiment, the radiation device 100 (see FIG. 1) including the flexible film 110 is obtained. Since the plurality of conductor disks 150 are supported by the substrate 400 when forming the plurality of conductor disks 150, the dimensional accuracy of each conductor disk 150 can be increased. When the flexible film 110 is bonded to the substrate 400 by the adhesive layer 410, displacement of the flexible film 110 with respect to the substrate 400 can be suppressed. Therefore, the dimensional accuracy of each conductor disk 150 is further improved.

Although the preferred embodiments of the present disclosure have been described in detail above, the present disclosure is not limited to the above embodiments.

For example, in the embodiment described above, each unit constituent region R has the same arrangement pattern, but a plurality of unit constituent regions R may have mutually different arrangement patterns. For example, the first unit constituent region R may have a first arrangement pattern, and the second unit constituent region R may have a second arrangement pattern obtained by rotating the first arrangement pattern by 90 degrees.

In the above embodiment, the arrangement pattern in each unit configuration region R is composed of nine conductor disks 150 arranged to correspond to a 3 x 3 matrix, but the arrangement pattern corresponds to a 4 x 4 matrix. It may be composed of 16 conductive disks 150 arranged in a matrix of 5×5, 25 conductive disks 150 arranged so as to correspond to a 5×5 matrix, or a matrix of 10× It may be composed of 100 conductor disks 150 arranged to correspond to 10 matrices. When the number of conductor disks 150 in each unit constituent region R increases, the characteristics of the absorption spectrum can be controlled with high precision.

10...Radiation cooling device 10a...Front surface 10b...Back surface 100...Radiation device 110...Flexible film 110a...Bottom surface 110b...Top surface (principal surface)
120...Conductor layer 120a...Lower surface 120b...Upper surface 130...Semiconductor layer 130a...Lower surface 130b...Upper surface (principal surface)
140...Surface protection layer 150...Conductor disk 150a...First conductor disk 150b...Second conductor disk 150c...Third conductor disk 150d...Fourth conductor disk 150e...Fifth conductor disk 150f...Sixth conductor Body disk 150g...Seventh conductor disk 150h...Eighth conductor disk 150i...Ninth conductor disk 200...Building 210...Heat source 220...Natural convection 230...Electromagnetic waves 300...Member 300a...Curved surface 400...Substrate 410...Adhesive Layer a1...Line a2...Line a3...Line b1...Line b2...Line b3...Line C...Intersection CN...Central axis CR...Curvature radius P...Periodic pitch R...Unit configuration area

Claims (10)

a flexible membrane;
a conductor layer provided on the flexible film;
a semiconductor layer provided on the conductor layer;
a plurality of conductor disks provided on the semiconductor layer and spaced apart from each other;
A radiation device comprising: The conductor layer is provided on the main surface of the flexible film,
The radiating device according to claim 1, wherein the flexible membrane is bendable such that the main surface has a radius of curvature of 60 mm or less. When the flexible film is curved so that the main surface has a radius of curvature of 60 mm, the absolute value of the dimensional change rate of each of the plurality of conductor disks and the distance between the plurality of adjacent conductor disks. 3. The radiation device according to claim 2, wherein the absolute value of the dimensional change rate of the interval is 10% or less. The radiation device according to any one of claims 1 to 3, wherein the flexible film contains resin. 5. The radiating device of claim 4, wherein the flexible membrane comprises polyimide. The plurality of conductive disks are arranged such that each of the plurality of unit constituent regions having the same area and the same shape has the same arrangement pattern on the main surface of the semiconductor layer,
Each of the plurality of unit constituent regions has a rectangular shape with each side having a length of 4.5 μm or more and 5.5 μm or less,
The plurality of unit constituent regions are arranged in an array such that adjacent unit constituent regions have a common side in each of two mutually orthogonal directions along the main surface. Radiating device according to any one of the items. The arrangement pattern is a 3×3 matrix in which three conductive disks are arranged along a first side of the rectangular shape and three conductive disks are arranged along a second side perpendicular to the first side. Consisting of nine conductor disks arranged to correspond to the
7. The radiation device according to claim 6, wherein the nine conductive disks include four or more types of conductive disks having different diameters. a member having a curved surface;
The radiation device according to any one of claims 1 to 7,
Equipped with
The radiant device is a radiant cooling device, wherein the radiant device is provided on the member so that the flexible film faces the curved surface. providing a flexible film on the substrate;
a step of sequentially forming a conductor layer, a semiconductor layer, and a plurality of conductor disks spaced apart from each other on the flexible film;
Peeling the flexible film from the substrate;
A method of manufacturing a radiant device, including: 10. The method of manufacturing a radiation device according to claim 9, wherein the step of providing the flexible film includes adhering the flexible film to the substrate with an adhesive layer.

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