TW202219134A - Radiation device, radiative cooling device, and method for manufacturing radiation device - Google Patents

Abstract

This radiation device comprises a flexible film, an electroconductive layer provided on the flexible film, a semiconductor layer provided on the electroconductive layer, and a plurality of electroconductive discs that are provided on the semiconductor layer and that are positioned so as to be set apart from each other.

Description

Radiation device, radiation cooling device and method of making radiation device

The present disclosure relates to a radiation device, a radiation cooling device, and a method of manufacturing the radiation device. This application claims priority based on Japanese Patent Application No. 2020-185732 for which it applied on November 6, 2020, and uses all the contents described in the above Japanese Patent Application.

Patent Document 1 discloses a selective radiation cooling structure including a selective emission layer including a polymer and a plurality of dielectric particles dispersed in the polymer. In the case of making a structure in which the microspheres are dispersed, there are cases where the microspheres agglomerate.

Patent Document 2 discloses a radiation device using a plasmonic metamaterial. Since the radiation device is fabricated using lithography, it is formed on a silicon substrate with a smooth surface. [Prior Art Literature] [Patent Literature]

Patent Document 1: Japanese Patent Publication No. 2019-515967 Patent Document 2: International Publication No. 2020/026345

A radiation device according to one aspect of the present disclosure includes: a flexible film; a conductor layer provided on the flexible film; a semiconductor layer provided on the conductor layer; and a plurality of conductive disks, etc. provided on the above-mentioned semiconductor layer, and are arranged apart from each other.

[Problems to be solved by this disclosure] International Publication No. 2020/026345 does not disclose that the radiation device is mounted on a member having a curved surface.

The present disclosure provides a bendable radiation device, a radiation cooling device, and a method of manufacturing the radiation device.

[Effect of this disclosure] According to the present disclosure, a bendable radiation device, a radiation cooling device, and a method of manufacturing the radiation device can be provided.

[Description of Embodiments of the Present Disclosure] A radiation device according to an embodiment includes: a flexible film; a conductor layer provided on the flexible film; a semiconductor layer provided on the conductor layer; and a plurality of conductor disks provided on the semiconductor layers, and are arranged spaced apart from each other.

According to the above radiation device, the radiation device can be bent by bending the flexible film.

The conductor layer may be provided on the main surface of the flexible film, and the flexible film may be curved so that the main surface has a radius of curvature of 60 mm or less. In this case, the radiation device can be bent more.

In the case where the flexible film is bent so that the main surface has a radius of curvature of 60 mm, the absolute value of the dimensional change rate of each of the plurality of conductive discs and the adjacent plurality of The absolute value of the dimensional change rate of the spacing between the conductor discs is below 10%. In this case, even if the radiation device is made to bend more, the dimensional change rate of each conductor disk and each space can be made small. Thereby, the absolute value of the deviation of the absorption wavelength due to the dimensional change can be reduced to, for example, 5 μm or less.

The above-mentioned flexible film may contain resin. The above-mentioned flexible film may also contain polyimide.

The plurality of conductor disks may be arranged in such a manner that each of the plurality of unit constituent regions having the same area and the same shape has the same arrangement pattern on the principal surface of the above-mentioned semiconductor layer, and each of the plurality of unit constituent regions may be arranged in the same arrangement pattern. It has a rectangular shape with each side having a length of 4.5 μm or more and 5.5 μm or less, and the plurality of unit constituting regions are adjacent to each other in each of the two directions along the above-mentioned main surfaces that are orthogonal to each other. Arrays are arranged in such a way that they have a common edge with each other. In this case, the radiation device can selectively emit electromagnetic waves in the "atmospheric window" corresponding to the wavelength range of 4.5 μm to 5.5 μm.

The above-mentioned arrangement pattern may be formed by a 3×3 matrix in which three conductor disks are arranged along the first side of the rectangular shape and three conductor disks are arranged along the second side orthogonal to the first side. It is composed of 9 conductor disks arranged in a corresponding manner, and the 9 conductor disks include 4 or more types of conductor disks having mutually different diameters. In this case, nine conductor disks can be appropriately arranged in a rectangular shape having a length of 4.5 μm or more and 5.5 μm or less on each side.

A radiation cooling device according to an embodiment includes a member having a curved surface, and the radiation device, and the radiation device is provided on the member so that the flexible film faces the curved surface. In this case, the flexible membrane can be bent in such a way as to follow the curved surface.

The method of manufacturing the radiation device of one embodiment includes the following steps: disposing a flexible film on a substrate; forming a conductor layer, a semiconductor layer, and a plurality of conductor disks spaced apart from each other in sequence on the flexible film; And peeling the said flexible film from the said board|substrate.

According to the above-described method of manufacturing a radiation device, a radiation device provided with a flexible film can be obtained.

The step of disposing the above-mentioned flexible film may also include bonding the above-mentioned flexible film to the above-mentioned substrate through an adhesive layer. In this case, positional displacement of the flexible film with respect to the substrate can be suppressed.

[Details of Embodiments of the Present Disclosure] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same symbols are used for the same or equivalent elements, and repeated descriptions are omitted. In the drawings, the X-axis direction, the Y-axis direction, and the Z-axis direction which intersect with each other are shown as needed. The X-axis direction, the Y-axis direction, and the Z-axis direction are, for example, orthogonal to each other.

FIG. 1 is a cross-sectional view schematically showing a radiation device according to an embodiment. The radiation device 100 shown in FIG. 1 includes: a flexible film 110; a conductor layer 120 disposed on the flexible film 110; a semiconductor layer 130 disposed on the conductor layer 120; and a plurality of conductor disks 150, They are disposed on the semiconductor layer 130 .

The flexible film 110 has a lower surface 110a and an upper surface 110b (main surface) which are arranged on the opposite sides to each other in the Z-axis direction. The Z-axis direction corresponds to the thickness direction of the flexible film 110 . The conductor layer 120 is disposed on the upper surface 110b of the flexible film 110 . The conductor layer 120 has a lower surface 120a facing the upper surface 110b, and an upper surface 120b opposite to the lower surface 120a. The semiconductor layer 130 is disposed on the upper surface 120b of the conductor layer 120 . The semiconductor layer 130 has a lower surface 130a facing the upper surface 120b, and an upper surface 130b (main surface) opposite to the lower surface 130a. A plurality of conductive disks 150 are disposed on the upper surface 120b of the semiconductor layer 130 and are spaced apart from each other. Each conductor disk 150 has, for example, a circular shape when viewed from the Z-axis direction. On the upper surface 130b of the semiconductor layer 130, a surface protection layer 140 can also be provided to cover the plurality of conductor disks 150 to protect the plurality of conductor disks 150 and prevent light from being incident from the outside. The surface protective layer 140 can also function as a reflective film.

The flexible film 110 may also contain resin. Examples of resins include polyimides. The flexible film 110 may also include, for example, a material having a Young's modulus of 0.5 GPa or more and 100 GPa or less. The thickness of the flexible film 110 is, for example, 1 μm or more and 300 μm or less. The flexible film 110 may also include inorganic materials. The flexible film 110 may be, for example, a thin glass plate having a thickness of not less than 20 μm and not more than 500 μm (eg, G-Leaf (registered trademark) manufactured by Nippon Denki Glass Co., Ltd.). The flexible film 110 may have higher resistance to organic solvents and strong acids. The average surface roughness Ra (arithmetic average roughness) of the region (reference length) of the upper surface 130b of the flexible film 110 about 50 μm may be 5 nm or less. When the upper surface 130b of the flexible film 110 is provided with needle-like protrusions with a height of about 100 nm, the needle-like protrusions can be removed by oxygen plasma treatment (ashing). In addition, the average surface roughness Ra of the entire area of the upper surface 130b of the flexible film 110 (the reference length over the entirety) may be 500 nm or less.

The conductor layer 120 may also include metal. Examples of metals include aluminum (Al), gold (Au), silver (Ag), and copper (Cu). The thickness of the conductor layer 120 may also be greater than the thickness of the conductor disk 150 . The thickness of the conductor layer 120 may be not less than 100 nm and not more than 200 nm. If the thickness of the conductor layer 120 is increased, the transmission of electromagnetic waves can be suppressed.

The semiconductor layer 130 may also include at least one of silicon (Si) and germanium (Ge). In this case, in the mid-infrared wavelength region, that is, in the wavelength region shorter than 8 μm, the absorptivity of the semiconductor layer 130 becomes small. The thickness of the semiconductor layer 130 may also be 100 nm or more and 1000 nm or less.

Each of the plurality of conductor disks 150 may also include metal. The example of the metal includes the same material as the example of the material of the conductor layer 120 . In order to improve the controllability of the shape and reduce the manufacturing cost, the thickness of each conductor disk 150 may be not less than 30 nm and not more than 100 nm. In this case, even if the radiation characteristics vary due to the thickness of the conductor disk 150, a sufficient emissivity can be obtained in the wavelength region of 8 μm to 13 μm. The size (diameter) of each conductor disk 150 can repeat the analysis of the FDTD method (Finite-difference time-domain: finite difference time domain method) in the range of 0.8 μm to 1.5 μm, and the wavelength of 8 μm to 13 μm. The choice of way to obtain high emissivity in the domain.

FIG. 2 is a top view showing a plurality of unit constituent regions of an array configuration. FIG. 3 is a plan view showing the arrangement pattern of the conductor disks in each unit constituting region. Hereinafter, the example of FIG. 2 and FIG. 3 is demonstrated. The arrangement pattern of the conductor disks is not limited to this example.

The plurality of conductor disks 150 may be arranged in such a manner that each of the plurality of unit constituent regions R having the same area and the same shape has the same arrangement pattern on the upper surface 130b of the semiconductor layer 130 . Each of a plurality of units constituting R may also have a rectangular shape having each side with a length of 4.5 μm or more and 5.5 μm or less. The lengths of the two adjacent sides sandwiching an interior angle can be different from each other, and can also be equal to each other. In this example, each of the plurality of unit constituting regions R has a square shape, and each side of the square shape has a length of 4.5 μm or more and 5.5 μm or less. The plurality of unit constituent regions R may be arranged in an array such that adjacent unit constituent regions R in each of the X-axis direction and the Y-axis direction orthogonal to each other along the upper surface 130b have a common side. A plurality of units constituting the region R are arranged without gaps. Thereby, a two-dimensional periodic structure of the arrangement pattern of the plurality of conductor disks 150 is formed on the upper surface 130b. The two-dimensional periodic structure is an infrared plasmon sub-periodic structure that generates electromagnetic waves in the mid-infrared wavelength domain. The length of one side of the unit constituent region R corresponds to the periodic pitch P of the two-dimensional periodic structure. In this example, the arrangement pattern of each unit constituting region R is constituted by nine conductor disks 150 arranged in a matrix corresponding to 3×3. In a 3×3 matrix, three conductor disks 150 are arranged along a first side of the rectangular shape and three conductor disks 150 are arranged along a second side orthogonal to the first side. Corresponding conductor disks 150 are arranged on each of the lines a1 , a2 and a3 and the nine intersection points (grid points) C of the lines b1 , b2 and b3 . The center of each conductor disk 150 coincides with each intersection point C. Lines a1, a2, and a3 extend parallel to the X-axis direction, and are set at equal intervals in the Y-axis direction. The lines b1, b2, and b3 extend parallel to the Y-axis direction, and are set at equal intervals in the X-axis direction. Lines a1, a2, and a3 are sequentially arranged in the Y-axis direction. The lines b1, b2, and b3 are arranged in order in the X-axis direction.

The nine conductor disks 150 arranged in one unit configuration region R include four or more types of conductor disks 150 having mutually different diameters. In this example, in the unit configuration region R, the nine conductor disks 150a to 150i are arranged in a state of being spaced apart from each other at the intersection C of the lines a1 to a3 and the lines b1 to b3. The first conductor disk 150a is arranged at the intersection C of the line a3 and the line b1. The second conductor disk 150b is arranged at the intersection C of the line a3 and the line b2. The third conductor disk 150c is arranged at the intersection point C of the line a3 and the line b3. The fourth conductor disk 150d is arranged at the intersection point C of the line a2 and the line b1. The fifth conductor disk 150e is arranged at the intersection point C of the line a2 and the line b2. The sixth conductor disk 150f is arranged at the intersection point C of the line a2 and the line b3. The seventh conductor disk 150g is arranged at the intersection point C of the line a1 and the line b1. The eighth conductor disk 150h is disposed at the intersection point C of the line a1 and the line b2. The ninth conductor disk 150i is arranged at the intersection point C of the line a1 and the line b3. The diameter of the first conductor disk 150a is 0.9 μm. The diameter of the second conductor disk 150b is 1.1 μm. The diameter of the third conductor disk 150c is 0.9 μm. The diameter of the fourth conductor disk 150d is 1.4 μm. The diameter of the fifth conductor disk 150e is 1.5 μm. The diameter of the sixth conductor disk 150f is 1.2 μm. The diameter of the seventh conductor disk 150g is 0.9 μm. The diameter of the eighth conductor disk 150h is 1.3 μm. The diameter of the ninth conductor disk 150i is 1.0 μm. Therefore, in this example, the nine conductor disks 150 arranged in one unit configuration region R include three conductor disks 150a, 150c, and 150g having the smallest diameter (0.9 μm). The 9 conductor disks 150 include 7 kinds (0.9 μm, 1.0 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm) of conductor disks 150a, 150b, 150d, 150e, 150f having different diameters from each other , 150h, 150i. In this example, the center-to-center interval (ie, the interval between the intersections C) of the conductive disks 150 adjacent to each other is 1.7 μm. In this example, the length of one side of the unit constituting region R corresponding to the period pitch P is 5.1 μm.

FIG. 4 is a cross-sectional view of the radiation device of FIG. 1 schematically showing bending. As shown in FIG. 4 , the flexible film 110 may also be bent such that the upper surface 110 b of the flexible film 110 has a curvature radius CR of 60 mm or less. In FIG. 4, the flexible film 110 may be bent in such a manner that the upper surface 110b is convex. The flexible film 110 can also be curved in a way that the upper surface 110b is concave, and the upper surface 110b can also be curved in a way of including both a convex area and a concave area. The flexible film 110 can be bent so as to surround the central axis CN along the upper surface 110b. When the flexible film 110 is bent so as to surround the central axis CN along the Y-axis direction, the curvature radius CR corresponds to the distance from the central axis CN to the upper surface 110b. When the flexible film 110 is bent in such a way that the upper surface 110b has a radius of curvature CR of 60 mm, the absolute value of the dimensional change rate of each of the plurality of conductor disks 150 and the adjacent plurality of conductor disks 150 The absolute value of the dimensional change rate of the interval may be 10% or less. The size of each conductor disk 150 and the change of each interval can also be irreversible.

Dn1表示於單位構成區域R內配置之k個導電體碟150中之第n個導電體碟150彎曲前之尺寸(參照圖1)。Dn1係於正交於Y軸方向之剖面中，第n個導電體碟150之未彎曲之上表面之長度。Dn2表示第n個導電體碟150之彎曲後之尺寸(參照圖4)。Dn2係於正交於中心軸CN之剖面中，第n個導電體碟150之彎曲之上表面之長度。k係2以上之自然數。n係自然數。於圖2及圖3之例中，k係9。第n個導電體碟150之例係具有最小直徑(0.9 μm)之第1導電體碟150a。於以上表面110凸出之方式彎曲可撓性膜110之情形時，尺寸變化率RT1(%)為正值。另一方面，於上表面110b以凹窪之方式彎曲可撓性膜110之情形時，尺寸變化率RT1(%)為負值。 The dimensional change rate RT1 (%) of each of the plurality of conductive disks 150 can be calculated by the following formula.

Dn1 represents the dimension before bending of the n-th conductor disk 150 among the k conductor disks 150 arranged in the unit configuration region R (refer to FIG. 1 ). Dn1 is the length of the unbent upper surface of the n-th conductor disk 150 in a cross-section perpendicular to the Y-axis direction. Dn2 represents the dimension of the n-th conductor disk 150 after bending (refer to FIG. 4 ). Dn2 is the length of the curved upper surface of the n-th conductor disk 150 in a section orthogonal to the central axis CN. k is a natural number greater than or equal to 2. n is a natural number. In the example of FIG. 2 and FIG. 3 , k is 9. An example of the nth conductor disk 150 is the first conductor disk 150a having the smallest diameter (0.9 μm). In the case where the flexible film 110 is bent in such a manner that the upper surface 110 protrudes, the dimensional change rate RT1 (%) is a positive value. On the other hand, in the case where the upper surface 110b bends the flexible film 110 in a concave manner, the dimensional change rate RT1 (%) is a negative value.

Gn1表示單位構成區域R內之m個間隔中之第n個間隔之彎曲前之尺寸(參照圖1)。Gn1係於正交於Y軸方向之剖面中，相鄰之複數個導電體碟150之未彎曲之上表面間之間隔。Gn2表示第n個間隔之彎曲後之尺寸(參照圖4)。Gn2係於正交於中心軸CN之剖面中，相鄰之複數個導電體碟150之彎曲之上表面間之間隔。m及n係自然數。於圖2及圖3之例中，m係6。第n個間隔之例係m個間隔中最小之間隔。於以上表面110b凸出之方式彎曲可撓性膜110之情形時，尺寸變化率RT2(%)為正值。另一方面，於以上表面110b凹窪之方式彎曲可撓性膜110之情形時，尺寸變化率RT2(%)為負值。 The dimensional change rate RT2 (%) of the interval between the adjacent plurality of conductive disks 150 can be calculated by the following formula.

Gn1 represents the dimension before bending of the n-th space among the m spaces in the unit configuration region R (refer to FIG. 1 ). Gn1 is the interval between the unbent upper surfaces of the plurality of adjacent conductive disks 150 in the cross section orthogonal to the Y-axis direction. Gn2 represents the dimension after bending of the n-th interval (refer to FIG. 4 ). Gn2 is the interval between the curved upper surfaces of the adjacent plurality of conductor disks 150 in the section orthogonal to the central axis CN. m and n are natural numbers. In the example of FIG. 2 and FIG. 3, m is 6. FIG. The example of the nth interval is the smallest interval among the m intervals. In the case where the flexible film 110 is bent in such a manner that the upper surface 110b protrudes, the dimensional change rate RT2 (%) is a positive value. On the other hand, when the flexible film 110 is bent so that the upper surface 110b is concave, the dimensional change rate RT2 (%) is a negative value.

FIG. 5 is a diagram showing a schematic configuration of a radiation cooling apparatus according to an embodiment. The radiation cooling device 10 shown in FIG. 5 is, for example, a sky radiator. The radiation cooling device 10 includes the radiation device 100 and the member 300 of the present embodiment. The member 300 has a curved surface 300a. The radiation device 100 is disposed on the member 300 in such a manner that the flexible film 110 faces the curved surface 300a. The radiation cooling device 10 may also be a radiation panel or the like having a spectrum with a high emissivity in the window wavelength band of the atmosphere. The radiation cooling device 10 has a surface 10a that emits electromagnetic waves in a specific wavelength range, and a back surface 10b that is opposite to the surface 10a. The radiation device 100 on the surface 10a is arranged away from the building 200 . On the other hand, the member 300 located in the back surface 10b is arrange|positioned in the vicinity of the building 200. Radiative cooling device 10 may be configured to be in direct or indirect contact with air heated by heat source 210 within building 200 .

The radiation cooling device 10 can absorb the heat of the air heated by the heat source 210 in the building 200 , convert the heat into electromagnetic waves 230 in the window wavelength region of the atmosphere, and release the heat to the outside of the building 200 . The radiation cooling device 10 loses thermal energy because the thermal balance between the radiation cooling device 10 and the universe is performed through the atmospheric window wavelength region. Thereby, the temperature of the radiation cooling apparatus 10 falls. The heated air in the building 200 is in contact with the back surface 10b of the radiation cooling device 10 . Therefore, the heated air is cooled by transferring the temporarily accumulated thermal energy to the radiation cooling device 10 . The cooled air is returned to the house by natural convection 220 or forced circulation in the building 200 . Therefore, the radiation cooling device 10 of the present embodiment can function as a refrigerator.

FIG. 6 is a graph showing an example of the absorption spectrum of the radiation device of one embodiment. In FIG. 6 , the horizontal axis shows the wavelength (μm). The vertical axis shows the absorption rate. The value of the absorptivity on the vertical axis is the maximum value normalized to 1. The graph of FIG. 6 shows the calculated results of absorption spectra associated with an example of a radiation device having the following configuration. The radiation device of this example includes an aluminum layer with a thickness of 100 nm, a silicon layer with a thickness of 500 nm, and a plurality of conductive disks with a thickness of 50 nm, which are sequentially laminated on the polyimide film. The arrangement pattern of the plurality of conductor disks is the same as the arrangement pattern of the example of FIG. 2 and FIG. 3 . It can be seen from Fig. 6 that a high absorption rate can be obtained in the "atmospheric window" corresponding to the wavelength range of 8 μm to 13 μm.

According to the radiation device 100 of the present embodiment, the radiation device 100 can be bent by bending the flexible film 110 as shown in FIG. 4 . Therefore, according to the radiation cooling device 10 of the present embodiment, for example, as shown in FIG.

In the case where the flexible film 110 can be bent in such a manner that the upper surface 110b has a curvature radius CR of 60 mm or less, the radiation device 100 can be greatly bent.

In the case where the upper surface 110b of the flexible film 110 is bent in such a way that the radius of curvature CR of 60 mm, the absolute value of the dimensional change rate RT1 of each of the plurality of conductive disks 150 and the adjacent plurality of conductive disks 150 The absolute value of the dimensional change rate RT2 of the interval may be 10% or less. In this case, even if the radiation device 100 is greatly bent, the dimensional change rate of each conductor disk 150 and each space can be reduced. Thereby, the absolute value of the deviation of the absorption wavelength due to the dimensional change can be reduced to, for example, 0.5 μm or less. Therefore, as long as each conductor disk 150 and each space are set so that the absorption wavelength is 5 μm, even if the flexible film 110 is bent, the absorption wavelength in the wavelength range of 4.5 μm or more and 5.5 μm or less can be obtained.

In the case where each of the plurality of unit constituting regions R has a rectangular shape with each side having a length of 4.5 μm or more and 5.5 μm or less, the radiation device 100 can emit an “atmospheric window” equivalent to a wavelength range of 4.5 μm or more and 5.5 μm or less. The electromagnetic waves are selectively emitted.

In the case where the nine conductor disks 150 include four or more types of conductor disks 150 which are arranged in a manner corresponding to a 3×3 matrix and have mutually different diameters, the nine conductor disks 150 can be appropriately arranged to have Within the rectangular shape of each side with a length of 4.5 μm or more and 5.5 μm or less.

Each of FIGS. 7A and 7B is a cross-sectional view schematically showing a step of a method of making a radiation device of one embodiment. The radiation device 100 of this embodiment can be manufactured as follows.

First, as shown in FIG. 7A , the flexible film 110 is provided on the substrate 400 . The substrate 400 is, for example, a silicon substrate. The flexible film 110 is disposed in such a manner that the lower surface 110 a faces the substrate 400 . The flexible film 110 can also be adhered to the substrate 400 through the adhesive layer 410 . In this case, the positional displacement of the flexible film 110 with respect to the substrate 400 can be suppressed. The adhesive layer 410 may have, for example, a heat resistance of 300° C. or higher. The adhesive layer 410 may also have high resistance to organic solvents and strong acids. The adhesive layer 410 may also contain, for example, a silicon-based adhesive (pressure-sensitive adhesive). An example of the flexible film 110 provided with the adhesive layer 410 is an adhesive tape (KAPTON (registered trademark) adhesive tape by Teraoka Seisakusho Co., Ltd.). The flexible film 110 has, for example, a rectangular shape when viewed from the thickness direction of the flexible film 110 .

After the flexible film 110 is provided on the substrate 400, the upper surface 110b of the flexible film 110 may also be cleaned with an alcohol-based cleaning solution. Thereby, the organic matter on the upper surface 110b is removed. Thereafter, oxygen plasma treatment may also be performed on the upper surface 110b. Thereby, the needle-like protrusions on the upper surface 110b and the remaining organic matter are removed.

Next, as shown in FIG. 7B , on the flexible film 110 , a conductor layer 120 , a semiconductor layer 130 , and a plurality of conductor disks 150 arranged to be spaced apart from each other are sequentially formed. The plurality of conductor disks 150 may be formed by photolithography and etching. First, on the flexible film 110, the conductor layer 120 (for example, the thickness of 100 nm) and the semiconductor layer 130 (for example, the thickness of 500 nm) are successively deposited, for example, by magnetron sputtering. The temperature of the substrate 400 may be adjusted within a range of 150° C. or higher and 300° C. or lower, and the deposition may be performed. Thereby, the effects of densification of the conductor layer 120 and the semiconductor layer 130 and flattening of the surface can be obtained. After that, after forming a resist film on the upper surface 130b of the semiconductor layer 130, stepper exposure and development are performed, thereby forming an opening pattern in the resist film. Thereafter, a conductor layer (eg, thickness 50 nm) is deposited on the resist film and in the opening pattern, for example, by magnetron sputtering. After that, by using an organic solvent to remove the resist film and the conductor layer on the resist film, a plurality of conductor disks 150 can be obtained.

Next, the flexible film 110 is peeled off from the substrate 400 . The flexible film 110 can be peeled off from the substrate 400 by mechanically pulling from the corners of the flexible film 110 . In this way, the radiation device 100 can be obtained.

According to the method of manufacturing the radiation device 100 of the present embodiment, the radiation device 100 provided with the flexible film 110 can be obtained (see FIG. 1 ). When the plurality of conductor disks 150 are formed, since the plurality of conductor disks 150 are supported by the substrate 400 , the dimensional accuracy of each conductor disk 150 can be improved. When the flexible film 110 is adhered to the substrate 400 by the adhesive layer 410 , the positional displacement of the flexible film 110 relative to the substrate 400 can be suppressed. Therefore, the dimensional accuracy of each conductor disk 150 is further improved.

The preferred embodiment of the present disclosure has been described above in detail, but the present disclosure is not limited to the above-described embodiment.

For example, in the above-described embodiment, each unit configuration region R has the same arrangement pattern, but a plurality of unit configuration regions R may have mutually different arrangement patterns. For example, the first unit configuration region R may have a first arrangement pattern. The second unit configuration region R may have a second arrangement pattern obtained by rotating the first arrangement pattern by 90°.

In the above-described embodiment, the arrangement pattern of each unit configuration region R is constituted by nine conductor disks 150 arranged in a manner corresponding to a 3×3 matrix. The arrangement pattern of each unit constituting region R can also be formed by 16 conductor disks 150 arranged in a matrix corresponding to 4×4, or by 25 conductive disks 150 arranged in a matrix corresponding to 5×5. The conductor disks 150 may be formed by 100 conductor disks 150 arranged in a matrix corresponding to 10×10. If the number of the conductor disks 150 in each unit constituting region R is increased, the characteristics of the absorption spectrum can be controlled with high precision.

It should be understood that the embodiments disclosed herein are all illustrative and not restrictive. The scope of the present invention does not mean the above, but is shown by the scope of the patent application, and is intended to cover all changes within the meaning and scope equivalent to the scope of the patent application.

10: Radiation cooling device 10a: Surface 10b: Back 100: Radiation Device 110: Flexible membrane 110a: Lower surface 110b: Upper surface (main surface) 120: Conductor layer 120a: lower surface 120b: lower surface 130: Semiconductor layer 130a: Lower surface 130b: Upper surface (main surface) 140: Surface protection layer 150: Conductor disc 150a: 1st conductor plate 150b: 2nd conductor plate 150c: 3rd Conductor Disc 150d: 4th Conductor Disc 150e: 5th Conductor Disc 150f: 6th Conductor Disc 150g: 7th conductor plate 150h: 8th conductor plate 150i: 9th Conductor Disc 200: Buildings 210: Heat Source 220: Natural Convection 230: Electromagnetic waves 300: Components 300a: Curved Surface 400: Substrate 410: Adhesive layer a1～a3: Line b1～b3: line C: intersection CN:Central axis CR: Radius of Curvature Dn1: size Dn2: size Gn1: size Gn2: size P: period pitch R: unit composition area

FIG. 1 is a cross-sectional view schematically showing a radiation device according to an embodiment. FIG. 2 is a top view showing a plurality of unit constituent regions of an array configuration. FIG. 3 is a plan view showing the arrangement pattern of the conductor disks in each unit constituting region. FIG. 4 is a cross-sectional view of the radiation device of FIG. 1 schematically showing bending. FIG. 5 is a diagram showing a schematic configuration of a radiation cooling apparatus according to an embodiment. FIG. 6 is a graph showing an example of the absorption spectrum of the radiation device of one embodiment. 7A is a cross-sectional view schematically showing a step of a method of manufacturing a radiation device of one embodiment. 7B is a cross-sectional view schematically showing a step of a method of manufacturing a radiation device of one embodiment.

100: Radiation Device

110: Flexible membrane

110a: Lower surface

110b: Upper surface (main surface)

120: Conductor layer

120a: lower surface

120b: lower surface

130: Semiconductor layer

130a: Lower surface

130b: Upper surface (main surface)

140: Surface protection layer

150: Conductor disc

Dn1: size

Gn1: size

Claims (10)

A radiation device comprising: flexible membrane; a conductor layer, which is arranged on the above-mentioned flexible film; a semiconductor layer disposed on the above-mentioned conductor layer; and A plurality of conductor disks are arranged on the above-mentioned semiconductor layer and are arranged apart from each other. The radiation device of claim 1, wherein The conductor layer is arranged on the main surface of the flexible film; The flexible film may be bent so that the main surface has a radius of curvature of 60 mm or less. The radiation device of claim 2, wherein In the case where the above-mentioned flexible film is bent in such a way that the above-mentioned main surface has a radius of curvature of 60 mm, the absolute value of the dimensional change rate of each of the above-mentioned plurality of conductive discs and the distance between the adjacent plurality of conductive discs The absolute value of the dimensional change rate of the interval is less than 10%. The radiation device of any one of claims 1 to 3, wherein The above-mentioned flexible film contains resin. The radiation device of claim 4, wherein The above-mentioned flexible film contains polyimide. The radiation device of any one of claims 1 to 5, wherein The plurality of conductor disks are arranged in such a manner that each of the plurality of unit constituent regions having the same area and the same shape in the main surface of the semiconductor layer has the same arrangement pattern; Each of the above-mentioned plurality of unit constituting regions has a rectangular shape, and each side of the rectangular shape has a length of not less than 4.5 μm and not more than 5.5 μm; The plurality of unit configuration regions are arranged in an array such that adjacent unit configuration regions have a common side in each of the two directions along the main surfaces orthogonal to each other. The radiation device of claim 6, wherein The arrangement pattern is arranged in a manner corresponding to a 3×3 matrix in which three conductor plates are arranged along the first side of the rectangular shape and three conductor plates are arranged along the second side orthogonal to the first side. It consists of 9 conductor discs; The above-mentioned nine conductor disks include four or more types of conductor disks having mutually different diameters. A radiation cooling device comprising: a member having a curved surface; and A radiation device as claimed in any one of claims 1 to 7; and The above-mentioned radiation device is disposed on the above-mentioned member in such a manner that the above-mentioned flexible film faces the above-mentioned curved surface. A method of manufacturing a radiation device, comprising the steps of: disposing the flexible film on the substrate; On the above-mentioned flexible film, a conductor layer, a semiconductor layer, and a plurality of conductor disks spaced apart from each other are sequentially formed; and The said flexible film is peeled from the said board|substrate. The method of claim 9, wherein The step of disposing the flexible film includes attaching the flexible film to the substrate through an adhesive layer.

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