JP2024003741A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 111
- 238000002347 injection Methods 0.000 claims abstract description 137
- 239000007924 injection Substances 0.000 claims abstract description 137
- 238000006243 chemical reaction Methods 0.000 claims abstract description 90
- 238000009434 installation Methods 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 40
- 238000003780 insertion Methods 0.000 claims abstract description 38
- 230000037431 insertion Effects 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 158
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 238000010926 purge Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Polarising Elements (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】複数の基板1が収容され、基板処理が行われる処理空間S1が形成される反応管100と、前記反応管100側面の一部から外側方向に突出して設けられ、前記反応管100外面一部を形成するノズル設置部200と、前記ノズル設置部200に垂直方向に前記基板1の周りに沿って配置され、前記反応管100内にプロセスガスを噴射する複数のガス噴射ノズル300と、を含み、前記ノズル設置部200は、前記ガス噴射ノズル300のそれぞれが挿入されて設けられるように、前記ガス噴射ノズル300に対応する複数の挿入部が形成される基板処理装置を開示する。
【選択図】図3
Description
前記ガス噴射ノズルは、対応するそれぞれの前記挿入部の内壁面から離隔して挿入して設けられる。
平面上、前記排気口の中心と前記ノズル設置部の中心とを結ぶ仮想の水平線に対して線対称に配置される。
200 ノズル設置部
300 ガス噴射ノズル
Claims (19)
- 複数の基板が収容され、基板処理が行われる処理空間が形成される反応管と、
前記反応管の側面の一部から外側方向に突出して設けられ、前記反応管の外面の一部を形成するノズル設置部と、
前記ノズル設置部に垂直方向に前記基板の周りに沿って配置され、前記反応管内にプロセスガスを噴射する複数のガス噴射ノズルと、
を含み、
前記ノズル設置部は、
前記ガス噴射ノズルがそれぞれ挿入されて設けられるように、前記ガス噴射ノズルに対応する複数の挿入部が形成されることを特徴とする基板処理装置。 - 前記挿入部は、
前記ガス噴射ノズルが挿入されて設けられるように、前記処理空間側の内壁面に前記ガス噴射ノズルの外面と対応する形状に形成される複数の挿入溝であることを特徴とする請求項1に記載の基板処理装置。 - 前記挿入部は、
垂直方向に貫通形成され、前記ガス噴射ノズルがそれぞれ設けられる貫通口であることを特徴とする請求項1に記載の基板処理装置。 - 前記ノズル設置部は、
前記処理空間と前記貫通口とが連通するように形成される噴射口を含むことを特徴とする請求項3に記載の基板処理装置。 - 前記噴射口は、
前記ガス噴射ノズルに形成されるガス噴射孔に対応する位置に形成される複数の噴射孔であることを特徴とする請求項4に記載の基板処理装置。 - 前記噴射口は、
前記ガス噴射ノズルに垂直方向に複数形成されるガス噴射孔に対応する位置に、前記ガス噴射ノズルの直径より小さい幅の垂直方向に形成される噴射スリットであることを特徴とする請求項4に記載の基板処理装置。 - 前記貫通口は、
前記ガス噴射ノズルの外面と対応する形状に形成されることを特徴とする請求項3に記載の基板処理装置。 - 前記ガス噴射ノズルは、
対応するそれぞれの前記挿入部の内壁面から離隔して挿入して設けられることを特徴とする請求項1に記載の基板処理装置。 - 前記ノズル設置部は、
内面が前記反応管の内面と延びて同じ曲率で形成されることを特徴とする請求項1に記載の基板処理装置。 - 前記ノズル設置部の内面と前記反応管の中心との間の最短水平距離である第1距離が、前記反応管の内面のうち前記ノズル設置部を除いた位置で前記中心間の最短水平距離である第2距離と同じであることを特徴とする請求項1に記載の基板処理装置。
- 前記ノズル設置部は、
前記反応管の側面から外側に突出して設けられる一対の突出面と、前記突出面との間に形成される外面部とを含むことを特徴とする請求項1に記載の基板処理装置。 - 前記ノズル設置部は、
前記一対の突出面と前記外面部で囲まれた領域に設けられ、前記処理空間側の内面に複数の前記挿入部が形成される設置部材を含むことを特徴とする請求項11に記載の基板処理装置。 - 前記ノズル設置部は、
外面に前記一対の突出面と前記外面部が形成され、前記処理空間側の内面に複数の前記挿入部が一体に形成されることを特徴とする請求項11に記載の基板処理装置。 - 前記外面部は、
前記反応管の外面と同じ曲率で形成されることを特徴とする請求項11に記載の基板処理装置。 - 前記反応管は、
前記ノズル設置部に対向する位置に形成される排気口を含むことを特徴とする請求項1に記載の基板処理装置。 - 平面上、前記排気口の中心と前記ノズル設置部の中心とを結ぶ仮想の水平線に対して線対称に配置されることを特徴とする請求項15に記載の基板処理装置。
- 前記ガス噴射ノズルは、
垂直方向に形成される複数のガス噴射孔が互いに平行に前記プロセスガスを噴射するように配置されることを特徴とする請求項1に記載の基板処理装置。 - 前記反応管が収容され、内部の前記反応管との間に排気空間を形成するアウターチューブをさらに含むことを特徴とする請求項1に記載の基板処理装置。
- 前記アウターチューブの側面、前記ノズル設置部の内面及び前記反応管の側面は、互いに同じ曲率で形成されることを特徴とする請求項18に記載の基板処理装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020220078339A KR20240001548A (ko) | 2022-06-27 | 2022-06-27 | 기판처리장치 |
KR10-2022-0078339 | 2022-06-27 |
Publications (1)
Publication Number | Publication Date |
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JP2024003741A true JP2024003741A (ja) | 2024-01-15 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2022199701A Pending JP2024003741A (ja) | 2022-06-27 | 2022-12-14 | 基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230416917A1 (ja) |
JP (1) | JP2024003741A (ja) |
KR (1) | KR20240001548A (ja) |
CN (1) | CN117305809A (ja) |
TW (1) | TW202401569A (ja) |
-
2022
- 2022-06-27 KR KR1020220078339A patent/KR20240001548A/ko unknown
- 2022-12-14 US US18/081,263 patent/US20230416917A1/en active Pending
- 2022-12-14 CN CN202211606377.2A patent/CN117305809A/zh active Pending
- 2022-12-14 TW TW111148007A patent/TW202401569A/zh unknown
- 2022-12-14 JP JP2022199701A patent/JP2024003741A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US20230416917A1 (en) | 2023-12-28 |
CN117305809A (zh) | 2023-12-29 |
KR20240001548A (ko) | 2024-01-03 |
TW202401569A (zh) | 2024-01-01 |
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