JP2024003147A - Substrate for semiconductor device, method of manufacturing the same, and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate for a semiconductor device capable of manufacturing a semiconductor device that can be mounted with a good reliability on a mounting substrate having wires formed densely, and to provide a semiconductor device manufactured by using the substrate for a semiconductor device.

SOLUTION: A substrate for a semiconductor device comprises: a recessed part 20 formed on a matrix substrate 10 and that is smaller than a bottom face size of a semiconductor device; and a metal part 11 that is at least to be an electrode part 11b, being formed with a step at a predetermined position over an inner surface of one recessed part 20 and an outside surface of the concerned recessed part 20.

SELECTED DRAWING: Figure 2

COPYRIGHT: (C)2024,JPO&INPIT

Description

The present invention relates to a semiconductor device substrate in which a metal portion is formed on a mother substrate, and a semiconductor device using this semiconductor device substrate.

The conventional structure is to mount a semiconductor element on a substrate for supporting the semiconductor element, connect the semiconductor element with metal terminals for external lead-out, and then cover the entire substrate including the semiconductor element with a protective material such as resin. Due to the structure of semiconductor devices, there is a limit to miniaturization of semiconductor devices. On the other hand, a metal part that will become a semiconductor element mounting part or an electrode part is formed, and after mounting the semiconductor element on this metal part and processing wiring, etc., the surface side of the metal part where the semiconductor element and wiring are located is coated with resin, etc. Semiconductor devices are encapsulated with an encapsulating material with a part of the metal part exposed at the bottom, and the height can be lowered to save space, making it suitable for use in the field of ultra-small semiconductor devices such as chip sizes. Its use is progressing.

These semiconductor devices are mainly formed by plating (electroforming) metal parts that will serve as semiconductor element mounting parts and electrode parts on a conductive motherboard, and then forming the desired number of semiconductor devices. A manufacturing process that involves sealing the front side of the metal part with a sealant after it has been mounted and processed with wiring, etc., then removing only the mother board and cutting into individual semiconductor devices. Manufactured through. An example of a method for manufacturing such a semiconductor device is disclosed in Japanese Unexamined Patent Publication No. 2002-9196.

Japanese Patent Application Publication No. 2002-9196 Japanese Patent Application Publication No. 2004-214265

Patent Document 1 discloses a semiconductor device configured so that when one or both of the back surfaces of a semiconductor element mounting part and an electrode part are sealed with resin, they are slightly protruded (standoff) from the back surface of the sealing material. has been done. In this way, by making the back side of the semiconductor element mounting part and the electrode part protrude from the back side of the sealing material, when mounting the semiconductor device on the mounting board, the electrode part (lead) of the semiconductor device and the electrode part of the mounting board can be easily separated. (pad) can be bonded well.

In recent years, in order to achieve miniaturization of electronic devices, the electrodes and wiring portions of mounting boards are becoming densely packed together. Since it protrudes from the back surface of the retaining material, there is a risk that the semiconductor element mounting portion (die pad) or electrode portion (lead) of the semiconductor device may come into contact with the electrode portion (pad) or wiring portion of the mounting board at an undesired location.

An object of the present invention is to provide a substrate for a semiconductor device, which allows a semiconductor device to be manufactured with a protruding portion partially protruding from the back surface of a metal portion, and which can be reliably mounted even on a mounting board where wiring is formed densely. An object of the present invention is to provide a semiconductor device manufactured using a device substrate.

In the semiconductor device substrate according to the present invention, at least a metal portion 11 serving as an electrode portion 11b is formed on a mother substrate 10, and a protruding portion 11d partially protrudes from the surface of the mother substrate 11 of the metal portion 11. It is characterized by being provided with.

Further, a feature is that a recessed portion 11e is provided on the surface of the metal portion 11 opposite to the mother board surface side.

Further, the protruding portion 11d and the recessed portion 11e are provided at positions that overlap in the thickness direction of the metal portion 11.

Further, the protruding shape of the protruding portion 11d and the recessed shape of the recessed portion 11 are similar in shape.

In the method for manufacturing a substrate for a semiconductor device according to the present invention, at least a metal portion 11 serving as an electrode portion 11b is formed on a mother substrate 10, and the metal portion 11 partially protrudes from the surface of the mother substrate. A method for manufacturing a semiconductor device substrate provided with a protrusion 11d, which includes the steps of forming a first resist layer 12 on a mother substrate 10, and covering the mother substrate 10 with the first resist layer 12. a step of forming a recess 20 in an exposed area that is not exposed, a step of removing the first resist layer 12, a step of forming a second resist layer 16 on the mother substrate 10, and a step of removing the second resist layer 16 of the mother substrate 10. The method is characterized by comprising a step of forming the metal portion 11 in an exposed region not covered with the layer 16, and a step of removing the second resist layer 16.

Further, in the step of forming the metal part 11, the metal part 11 is grown by plating on the surfaces of the mother mold substrate 10 and the recessed part 20. Furthermore, in the step of forming the metal part 11, the metal part 11 is grown by plating to exceed the thickness of the second resist layer 16.

The semiconductor device according to the present invention has a metal part 11 that becomes an electrode part 11b that is electrically connected to a semiconductor element 14. This is a semiconductor device that is electrically connected and sealed with a sealing material 19, and the back surface of the metal part 11 is exposed from the back surface of the sealing material 19. It is characterized in that a protruding portion 11d is provided to protrude from the back surface, and the back surface of the metal portion 11 excluding the protruding portion 11d and the back surface of the sealing material 19 are substantially on the same plane.

Further, the metal part 11 is characterized in that a recessed part 11e is provided on the surface thereof.

Further, the protruding portion 11d and the recessed portion 11e are provided at positions that overlap in the thickness direction of the metal portion 11.

Further, the protruding shape of the protruding portion 11d and the recessed shape of the recessed portion 11 are similar in shape.

According to the present invention, only the protruding portion 11d is formed to partially protrude from the back surface of the metal portion 11, and a semiconductor device including such a metal portion 11 can be mounted on a mounting board with dense electrodes and wiring. It also enables easy, accurate, and reliable implementation. Further, even if the diameter and width of the protrusion 11d must be made small to correspond to the electrodes of the mounting board, the surface (surface area) of the metal part 11 can be made larger than the protrusion 11d, and the mounting The degree of freedom in selecting the semiconductor element 14 to be used can be expanded.

FIG. 1 is a partial plan view of a semiconductor device substrate according to a first embodiment of the present invention. 1 is a cross-sectional view and a plan view of a semiconductor device substrate according to a first embodiment of the present invention. FIG. 1 is a cross-sectional view and a bottom view of a semiconductor device according to a first embodiment of the present invention. FIG. FIG. 3 is a process explanatory diagram of a method for manufacturing a semiconductor device substrate according to a first embodiment of the present invention. FIG. 3 is a process explanatory diagram of a method for manufacturing a semiconductor device substrate according to a first embodiment of the present invention. FIG. 3 is a process explanatory diagram of a method for manufacturing a semiconductor device according to a first embodiment of the present invention. FIG. 6 is a cross-sectional view and a bottom view of a semiconductor device according to another embodiment of the present invention.

(First embodiment)
DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device substrate and a semiconductor device according to a first embodiment of the present invention will be described below with reference to FIGS. 1 to 6. As shown in FIG. 2, the semiconductor device substrate 1 according to the present embodiment includes a mother substrate 10 made of a conductive material, and is formed on the mother substrate 10 and manufactured using the present substrate. This configuration includes a metal portion 11 serving as an electrode portion 11b in the semiconductor device 70.

The mother board 10 is made of a conductive metal plate (approximately 0.1 mm thick) made of stainless steel (SUS430, etc.), aluminum, copper, etc., and is used as the semiconductor device substrate 1 until it is removed in the semiconductor device manufacturing process. It forms the main part of

The metal part 11 is made of nickel, copper, or a nickel alloy such as nickel-cobalt, and is formed by plating, and as shown in FIG. As one unit, as many semiconductor devices as the number of semiconductor devices to be manufactured are arranged in an array.

A protruding portion 11d is formed on the mother board surface side (back surface) of this metal portion 11. The protruding portion 11d is formed so as to partially protrude from the back surface of the metal portion 11. Further, a recess 11e is formed on the surface of the metal portion 11, which is the surface opposite to the mother board surface, more specifically, at a position directly above the protrusion 11d. A projecting portion 11c projecting like an eave is formed at the upper end of the metal portion 11.

The metal part 11 is mostly made of a material suitable for electrolytic plating, such as nickel or a nickel alloy, but the back side of the metal part 11 is made of a metal material suitable for electrolytic plating, and the back side of the metal part 11 is made of a material suitable for soldering when a semiconductor device is mounted. Therefore, a thin film 17 of a metal having better solder wettability than the main material such as nickel, such as gold, silver, tin, palladium, or solder, is disposed. This thin film 17 can also have a function of preventing erosion and deterioration of the metal portion 11 caused by the etching solution when the mother substrate 10 is removed by etching. The thickness of this thin film 17 is preferably about 0.01 to 1 μm.

Further, a surface metal layer 13 is formed on the surface of the metal portion 11 . This surface metal layer 13 is formed as a plating film made of gold, silver, palladium, etc., which has excellent bonding properties with the electrodes of the semiconductor element 14, and is coated on the surface of the metal part 11 with a predetermined thickness by plating each mother board 10. For example, in the case of gold plating, the thickness is approximately 0.1 to 1 μm, and in the case of silver plating, the thickness is approximately 1 to 10 μm.

As shown in FIG. 3, a semiconductor device 70 manufactured using this semiconductor device substrate 1 includes, in addition to the metal portion 11 obtained from the semiconductor device substrate 1, an electrode portion 11b of the metal portion 11. The configuration includes a semiconductor element 14 that is electrically connected to the semiconductor element 14 , and a sealing material 19 that covers and seals the semiconductor element 14 and the surface side of the metal part 11 .

In this semiconductor device 70, the back side of the metal part 11 is exposed at the bottom as an electrode, a heat dissipation pad, etc., and a protrusion 11d is formed protruding from the back surface of the exposed metal part 11, and the metal part other than the protrusion 11d is The configuration is such that the back side of the portion 11 and the back side of the sealing material 19 appearing as part of the device exterior are located on substantially the same plane. Each surface of the semiconductor device 70 other than the bottom is in a state where only the sealing material 19 forming the device exterior is exposed (see FIG. 3(B)).

The semiconductor element 14 is a so-called chip on which a fine electronic circuit is formed, and an electrode provided on the surface of the semiconductor element 14 is directly bonded to the electrode part 11b to electrically connect the semiconductor element 14 and the electrode part 11b. It happens.

The sealing material 19 is a thermosetting epoxy resin or the like with high physical strength, and covers and seals the metal part 11 and the semiconductor element 14 to protect the structurally weak parts from the outside. It is something. Note that when the semiconductor element 14 is a light emitting element such as an LED, a light-transmitting material is used.

This sealing material 19 has sufficient physical strength and functions as a part of the exterior of the semiconductor device 70 to sufficiently protect the inside, and can be used to remove the mother substrate 10 from the semiconductor device side, etc. Even when it is physically removed by applying force, the state of integration with the metal part 11 is maintained without any damage such as cracking.

Next, each step of the method of manufacturing a semiconductor device substrate and the method of manufacturing a semiconductor device using the semiconductor device substrate according to the present embodiment will be described.

As a manufacturing process for a semiconductor device substrate, first, a mother substrate 10 is prepared, and a first cavity 20 corresponding to the concave portion 20 for forming the protruding portion 11d of the metal portion 11 (electrode portion 11b) is formed on the mother substrate 10. A resist layer 12 is provided (see FIG. 4(A)). Specifically, a photosensitive resist material is provided on the front surface side of the mother substrate 10, and a mask film with a predetermined pattern corresponding to the formation position of the recessed portion 20 (projection portion 11d) is applied to the photosensitive resist material. In this state, the first resist layer 12 is cured by exposure to ultraviolet rays, developed to remove the resist agent in non-irradiated areas, and the first resist layer 12 is formed so that the formation position of the recess 20 (protrusion 11d) is exposed. Form. The first resist layer 12 is formed of an insulating material that is resistant to dissolution in the etching solution used when forming the recesses 20 on the surface of the mother substrate 10. A resist material is closely attached to the master substrate 10 to a predetermined thickness, for example in the range of 5 to 50 μm, and in this embodiment, 20 μm.

Subsequently, a recess 20 is formed in a region of the mother substrate 10 exposed from the first resist layer 12 (see FIG. 4(B)). Specifically, the recess 20 is formed by etching an exposed region of the front surface of the mother substrate 10 that is not covered with the first resist layer 12 . The shape of the recess 20 may be circular or polygonal, and the depth of the recess 20 is preferably 5 to 30 μm. Note that the method for forming the recesses 20 is not limited to etching, and may be formed by laser processing or blasting.

Subsequently, the first resist layer 12 formed on the mother substrate 10 is removed (dissolved, removed by swelling) to obtain the mother substrate 10 in which the recesses 20 are formed (see FIG. 4C).

Subsequently, a second resist layer 16 for forming the metal portion 11 (electrode portion 11b) is provided on the mother substrate 10 (see FIG. 5(A)). Specifically, a photosensitive resist material is provided on the front surface side of the mother board 10, and a mask film with a predetermined pattern corresponding to the formation position of the metal part 11 (electrode part 11b) is applied to the photosensitive resist material. With the metal part 11 (electrode part 11b) placed thereon, treatments such as curing by exposure to ultraviolet rays and development to remove the resist agent in non-irradiated areas are carried out so that the formation position of the metal part 11 (electrode part 11b) including the recessed part is exposed. A second resist layer 16 is formed. The second resist layer 16 is made of an insulating material that is resistant to dissolution in the plating solution used when forming the metal part 11 and the surface metal layer 13. A resist material is closely attached to the mother mold substrate 10 to a predetermined thickness, for example, in the range of 10 to 80 μm, and in this embodiment, 50 μm. Note that the first resist layer 12 and the second resist layer 16 are not limited to photosensitive resists, and paints that do not change in quality with etching solutions or plating solutions and can provide a strong coating film can be used on the mother substrate. It can also be formed by electro-deposition coating or the like to a required thickness so that the concave portion 20 and the metal portion 11 are exposed.

Subsequently, a metal portion 11 (electrode portion 11b) is formed in a region of the mother substrate 10 exposed from the second resist layer 16 (see FIG. 5(B)). Specifically, the exposed area of the front surface of the mother board 10 that is not covered with the second resist layer 16 is subjected to degreasing, acid immersion, chemical etching, electrolytic treatment, strike plating, etc. as a plating pretreatment. After selective application, a thin film 17 is formed by plating with a metal having excellent solder wettability, and metal is laminated on this thin film 17 by plating (electroforming) to form the metal part 11 (electrode part 11b). In this example, after chemically etching the exposed area of the stainless steel master substrate 10, a thin gold film 17 with a thickness of 0.01 to 1 μm is grown by plating, and then the thin film 17 is plated ( The metal portion 11 (electrode portion 11b) is formed by laminating nickel with a thickness of 20 to 100 μm, for example, 70 μm in this embodiment, by electroforming. The plating pre-treatment is selectively performed depending on the materials of the mother substrate 10 and the metal part 11 (thin film 17), and chemical etching is performed by dissolving the mother substrate 10 itself. The oxide film (inactive film) on the surface is removed, and the surface of the mother substrate 10 becomes rough. Further, when the purpose of forming the thin film 17 is to prevent soldering of a semiconductor device, the formation of the thin film 17 is not limited to before forming the main material part of the metal part 11 by plating, but after the completion of the semiconductor device 70 ( 10), the thin film 17 may be formed by plating on the back surface of the metal portion 11 exposed from the sealing material 19.

Here, when forming the metal part 11, the overhang part 11c is formed at the upper end of the metal part 11 by growing the plating to exceed the thickness of the second resist layer 16. Due to the presence of the overhanging portion 11c, when sealing with the encapsulant 19 is performed in the manufacturing process of a semiconductor device, the encapsulant 19 is hardened in a state where it is embedded in the overhanging portion 11c. Even when the mother board 10 is peeled off and removed from the metal layer 11 and the sealing material 19, the metal part 11 is reliably inserted into the sealing material 19 due to the biting effect of the sealing material 19 and the overhanging part 11c. The metal layer 11 remains, sticks together with the mother board 10, and is not separated, thereby preventing the metal layer 11 from shifting or missing. Note that when forming the metal part 11, if the plating is grown within a range that does not exceed the thickness of the second resist layer 16, a straight metal part 11 without an overhang at the upper end can be obtained.

Furthermore, a protrusion 11d is formed on the back surface of the metal part 11, and a protrusion 11d that partially protrudes from a part of the back surface, and a recess 11e is formed on the top surface of the metal part 11. The recess 11e is formed directly above the protrusion 11d, that is, at a position where the protrusion 11d and the recess 11e overlap in the thickness direction of the metal portion 11. This is because when forming the metal part 11 by plating, the metal constituting the metal part 11 is applied to the mother mold substrate 10 including the bottom surface (inner surface) of the recess 20 which is an exposed area not covered with the second resist layer 16 of the mother mold substrate 10. The protrusion 11d is formed by plating and growing the metal forming the metal part 11 in the recess 20 from the surface of the substrate 10, while the metal located directly above the protrusion 11d (recess 20) This is because a recessed portion 11e is formed on the surface of the portion 11, following the shape of the recessed portion 20. Note that the protrusion 11d and the recess 11e are similar, that is, the protrusion shape of the protrusion 11d and the recess shape of the recess 11e are similar, and the height dimension of the protrusion 11d and the recess 11e (recess 20) are similar. The depth dimension is in the relationship: height dimension of the protruding portion 11d≧depth dimension of the depressed portion 11e (recessed portion 20).

Subsequently, after obtaining the metal part 11 in the desired shape, a surface metal layer 13 is formed on the surface of the metal part 11 (electrode part 11b) (see FIG. 5(B)). Specifically, a silver surface metal layer 13 having a thickness of 1 to 10 μm is plated on the surface of the metal portion 11 (electrode portion 11b). When forming the surface metal layer 13 by plating, for example, if the metal part 11 is made of nickel and it is difficult to form the surface metal layer 13 in close contact, the surface of the metal part 11 may be plated before plating the surface metal layer 13. It is desirable to perform base plating (copper strike, nickel strike, silver strike, or gold strike) to improve the adhesion of the surface metal layer 13 to the metal part 11.

Subsequently, the second resist layer 16 formed on the mother substrate 10 is removed (dissolved, removed by swelling), thereby producing a semiconductor device substrate in which the metal portion 11 (electrode portion 11b) is formed on the mother substrate 10. is obtained (see FIG. 5(C)). Such metal parts 11 are formed on the surface of the mother substrate 10 in a form in which one or more electrode parts 11b are arranged as one unit, and a number of metal parts 11 are arranged in an array corresponding to the number of semiconductor devices to be manufactured. In this embodiment, six electrode parts 11b are used as one unit.

Although the first resist layer 12 and the second resist layer 16 are formed on the front side of the mother substrate 10, a resist layer may also be formed on the back side of the mother substrate 10. The resist layer on the back side is made of a material that is resistant to etching solutions and plating solutions in the hardened state, and can be easily dissolved and removed when no longer needed, such as a photosensitive alkaline developable type with a thickness of about 50 μm. A film resist can be disposed by thermocompression bonding or the like, and then subjected to a treatment such as exposure to ultraviolet rays without a mask to be cured over the entire back surface. The resist layer on the back side is not limited to a resist, and may be a cover film, for example, as long as it has dissolution resistance and insulation properties.

Next, manufacturing of a semiconductor device using the obtained semiconductor device substrate 1 will be described. First, the semiconductor element 14 is placed on the electrode portion 11b (metal portion 11) of the semiconductor device substrate 1. The electrodes of the semiconductor element 14 and the corresponding electrode portions 11b (metal portions 11) are electrically connected (see FIG. 6A). This electrical connection is made by soldering. Note that when mounting the semiconductor element 14, it is preferable that the electrodes of the semiconductor element 14 be electrically connected at a position that avoids the recessed part of the electrode part 11b (metal part 11). Further, in this embodiment, the electrical connection between the semiconductor element 14 and the electrode part 11b is performed by a flip-chip method, but of course, it is also performed by a wire bonding method using a wire made of conductive wire material such as gold or copper. It's okay.

Subsequently, the front side of the mother board 10 is sealed with a sealing material 19 such as a thermosetting epoxy resin, and the semiconductor element 14 is placed in a protected state isolated from the outside (see FIG. 6(B)). In detail, the front side of the mother board 10 is attached to a mold that will serve as an upper mold, and while the mother board 10 is made to play the role of a lower mold, an epoxy resin that will be a sealing material 19 is placed in the mold. Sealing is performed in the process of press-fitting, and on the mother board 10, a large number of electrode parts 11b forming one semiconductor device are uniformly sealed while remaining aligned, and a large number of semiconductor devices are connected. It will appear in the state.

Subsequently, the mother substrate 10 is removed to obtain a state in which the electrode portion 11b (metal portion 11) is exposed at the bottom of each semiconductor device (see FIG. 6C). To remove the motherboard 10 made of stainless steel, a method is used in which the motherboard 10 is physically peeled off from the semiconductor device side. By using stainless steel, which has excellent strength and removability, for the mother substrate 10, the mother substrate 10 can be peeled off from the semiconductor device side and quickly separated and removed.

In addition, as a method for removing the mother substrate 10, a method of etching (dissolving) the mother substrate 10 can also be used. In the case of this etching, an etching solution having a selective etching property that dissolves the mother substrate 10 but does not damage the materials of the thin film 17 and the metal portion 11 is used. In the case of removing by melting, excessive force is not applied to the semiconductor device side, so that the probability that an adverse effect will occur due to the removal of the mother substrate 10 can be reduced. When removing the mother substrate 10 by etching, it is desirable to form the thin film 17 prior to forming the metal portion 11 in order to obtain corrosion resistance.

At the bottom of the semiconductor device from which the mother substrate 10 has been removed, the protrusion 11d partially protrudes from the back side of the sealing material 19, and the back surface of the metal part 11 excluding the protrusion 11d and the sealing material 19 The rear surface of the holder and the back surface of the holder are located on substantially the same plane. After the mother substrate 10 is removed, a large number of connected semiconductor devices are separated one by one to form a completed semiconductor device 70.

As described above, since the semiconductor device substrate 1 according to the present embodiment has the protruding portion 11d on the electrode portion 11b formed on the mother substrate 10, the semiconductor device 70 using this semiconductor device substrate 1 can be At the bottom, a wiring escape structure is obtained by protruding from the back surface of the sealing material 19 by the height of the protruding portion 11d, so that it is easier to achieve desired mounting than when the entire back surface of the electrode portion 11b is protruded. Contact and bonding of the electrode portion 11b at areas other than the electrode portions and wiring portions of the substrate can be avoided, and a highly reliable semiconductor device can be obtained. Further, since the protruding portion 11d is partially formed to protrude from a part of the electrode portion 11b (metal portion 11), the degree of freedom in mounting the semiconductor device on the mounting board can be increased.

Further, inside the semiconductor device 70, the upper end periphery of the metal part 11 is formed to protrude into a substantially eave-like shape as a protruding part 11c, and the protruding part 11c is surrounded by the encapsulant 19 in a sealed state with the encapsulant 19. By being fixed (anchor effect), the overhanging part 11c bites into the sealing material 19, which is tightly integrated with the resins, and plays the role of a resistor against external force applied to the metal part 11. When the mother substrate 10 is made of stainless steel or the like and the mother substrate 10 is physically peeled off and removed from the semiconductor device side, even if an external force is applied to the back side of the metal part 11 to separate it from the device exterior, The protruding portion 11c prevents the metal portion 11 from moving and eliminates misalignment of the metal portion 11 with respect to other portions, improving the yield during manufacturing, increasing the strength of the semiconductor device, and increasing the strength of the semiconductor device during use. The durability of the semiconductor device and the reliability of the operation of the semiconductor device can also be improved. Moreover, by having the recessed part 11e on the surface of the metal part 11, the sealing material 19 enters into the recessed part 11e, so that, combined with the biting effect of the overhanging part 11c, the sealing material 19 and the metal part 11 are sealed. The adhesion with the material 19 can be made stronger, the strength of the semiconductor device can be increased, and the semiconductor element 14 can be protected more reliably.

In the above embodiment, the shape of the protrusion 11d includes round, circular, polygonal, spherical, pyramidal, and columnar shapes, and the boundary between the protrusion 11d and the metal part 11 (back surface) is It is preferable that the surface be formed into a gently continuous surface. Further, in the above embodiment, the semiconductor element 14 is mounted on the electrode part 11b, but a semiconductor element mounting part may be provided as the metal part 11 and the semiconductor element 14 may be mounted on this semiconductor element mounting part. good. Note that the adhesive for mounting the semiconductor element 14 on the metal part 11 (semiconductor element mounting part, electrode part 11b) may be solid, viscous, or liquid, such as solder, silver paste, Examples include resin paste and die attach film.

In the above embodiment, as shown in FIG. 3, by forming the metal part 11 (electrode part 11b) in a straight line, the effective usable area (metal part 11 (excluding the formation area) can be maximized, so even if the wiring on the mounting board is arranged in a complicated manner, the risk of causing a problem can be reduced. Further, as shown in FIG. 7, at the bottom of the semiconductor device (the back surface of the sealing material 19), one end of the metal part 11 is arranged in the outer peripheral part, and the other end of the metal part 11 is arranged in the central part. If provided, the spacing between adjacent metal parts 11 can be made constant. Such a configuration is effective when a large number of electrodes of the semiconductor element 14 (electrodes of the mounting board) are provided.

Reference Signs List 1 Semiconductor device substrate 10 Mother substrate 11 Metal portion 11b Electrode portion 11c Projection portion 11d Projection portion 11e Recessed portion 12 First resist layer 13 Surface metal layer 14 Semiconductor element 15 Wire 16 Second resist layer 17 Thin film 19 Sealing material 20 recess 70 semiconductor device

Claims (5)

A recess (20) smaller than the bottom size of the semiconductor device formed on the mother substrate (10), and a step at a predetermined position spanning the inner surface of one of the recesses (20) and the outer surface of the recess (20). 1. A substrate for a semiconductor device, comprising: a metal portion (11) which is formed by attaching at least a metal portion (11) to serve as an electrode portion (11b). The substrate for a semiconductor device according to claim 1, characterized in that a metal thin film (17) is formed on the back surface of the metal part (11). The substrate for a semiconductor device according to claim 1 or 2, wherein the depth of the recess (20) is 5 to 30 μm. forming a first resist layer (12) having an exposed area smaller than the bottom surface size of the semiconductor device on the mother substrate (10);
etching the mother substrate (10) to form a recess (20);
removing the first resist layer (12) formed on the mother substrate (10);
forming, on the mother substrate (10), a second resist layer (16) having an exposed area corresponding to a predetermined position spanning the inner surface of one of the recesses (20) and the outer surface of the recess (20); and,
forming a stepped metal part (11) by plating on an exposed area of the mother substrate (10) that is not covered with the second resist layer (16);
A method for manufacturing a substrate for a semiconductor device, comprising the step of removing the second resist layer (16) formed on the mother substrate (10). A semiconductor device in which a semiconductor element (14) and a metal part (11) serving as an electrode part (11b) electrically connected to the semiconductor element (14) are sealed with a sealing material (19),
A protrusion (11d) is provided on the back surface of the metal part (11), and is partially protruded and joined to the mounting board;
A semiconductor device characterized in that the back surface of the metal part (11) is formed in a shape with a step.

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