JP2023553851A - マイクロledビームコリメーション - Google Patents

マイクロledビームコリメーション Download PDF

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Publication number
JP2023553851A
JP2023553851A JP2023532774A JP2023532774A JP2023553851A JP 2023553851 A JP2023553851 A JP 2023553851A JP 2023532774 A JP2023532774 A JP 2023532774A JP 2023532774 A JP2023532774 A JP 2023532774A JP 2023553851 A JP2023553851 A JP 2023553851A
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JP
Japan
Prior art keywords
light emitting
layer
gap
dielectric layer
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023532774A
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English (en)
Japanese (ja)
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JP2023553851A5 (https=
Inventor
メゾウアリ,サミル
ブレイクスピア,ロバート,レスリー
イブスタッフ,コリン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Semiconductors Ltd
Original Assignee
Plessey Semiconductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Semiconductors Ltd filed Critical Plessey Semiconductors Ltd
Publication of JP2023553851A publication Critical patent/JP2023553851A/ja
Publication of JP2023553851A5 publication Critical patent/JP2023553851A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0363Manufacture or treatment of packages of optical field-shaping means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2023532774A 2020-12-01 2021-11-25 マイクロledビームコリメーション Pending JP2023553851A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB2018920.5 2020-12-01
GB2018920.5A GB2601495B (en) 2020-12-01 2020-12-01 Micro LED beam collimation
PCT/GB2021/053060 WO2022117995A1 (en) 2020-12-01 2021-11-25 Micro led beam collimation

Publications (2)

Publication Number Publication Date
JP2023553851A true JP2023553851A (ja) 2023-12-26
JP2023553851A5 JP2023553851A5 (https=) 2024-11-21

Family

ID=74099731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023532774A Pending JP2023553851A (ja) 2020-12-01 2021-11-25 マイクロledビームコリメーション

Country Status (8)

Country Link
US (1) US12615901B2 (https=)
EP (1) EP4256609B1 (https=)
JP (1) JP2023553851A (https=)
KR (1) KR102950377B1 (https=)
CN (1) CN116529897A (https=)
GB (1) GB2601495B (https=)
TW (1) TW202236591A (https=)
WO (1) WO2022117995A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230361242A1 (en) * 2022-05-04 2023-11-09 Applied Materials, Inc. Dry treatment for surface loss removal in micro-led structures
WO2024238753A1 (en) * 2023-05-18 2024-11-21 Applied Materials, Inc. Circuitry and processing techniques for improved displays
US20240413280A1 (en) * 2023-06-06 2024-12-12 Viavi Solutions Inc. Optical element of an emitter
CN119419203B (zh) * 2024-09-26 2025-10-31 厦门大学 微型发光二极管发光单元、器件及器件的制备方法

Citations (5)

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JPH1178115A (ja) * 1997-09-12 1999-03-23 Ricoh Co Ltd 光学装置
US20030095751A1 (en) * 2001-11-17 2003-05-22 Rogers David Carnegie Semiconductor optical devices and methods of making them
US20140131836A1 (en) * 2006-05-05 2014-05-15 Invensas Corporation Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques
JP2016503958A (ja) * 2012-12-10 2016-02-08 ルクスビュー テクノロジー コーポレイション 発光素子反射バンク構造
US20200343230A1 (en) * 2018-01-24 2020-10-29 Apple Inc. Micro led based display panel

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US6577332B2 (en) * 1997-09-12 2003-06-10 Ricoh Company, Ltd. Optical apparatus and method of manufacturing optical apparatus
US20020074522A1 (en) * 2000-12-15 2002-06-20 Zakar Eugene S. Scene projector apparatus
TW200941758A (en) * 2008-03-25 2009-10-01 Bright Led Electronics Corp LED-based surface light-source device
US20110062470A1 (en) * 2009-09-17 2011-03-17 Koninklijke Philips Electronics N.V. Reduced angular emission cone illumination leds
US8729581B2 (en) * 2010-01-13 2014-05-20 Apple Inc. Light guide for LED source
US10500770B2 (en) * 2010-03-02 2019-12-10 So-Semi Technologies, Llc LED packaging with integrated optics and methods of manufacturing the same
US8742655B2 (en) * 2011-07-22 2014-06-03 Guardian Industries Corp. LED lighting systems with phosphor subassemblies, and/or methods of making the same
WO2013061228A1 (en) * 2011-10-28 2013-05-02 Koninklijke Philips Electronics N.V. Light emitting device with integral shaped reflector
US10304375B2 (en) * 2016-09-23 2019-05-28 Hong Kong Beida Jade Bird Display Limited Micro display panels with integrated micro-reflectors
US10658558B2 (en) * 2017-10-10 2020-05-19 Lumileds Llc LED package including converter confinement
WO2020000184A1 (zh) * 2018-06-26 2020-01-02 苏州晶湛半导体有限公司 半导体结构及其制造方法
CN109270698A (zh) * 2018-11-22 2019-01-25 合肥京东方光电科技有限公司 光线准直薄膜及其应用
EP3664151A1 (en) * 2018-12-06 2020-06-10 Nexperia B.V. Bipolar transistor with polysilicon emitter and method of manufacturing
EP3956925A1 (en) * 2019-04-18 2022-02-23 Lumileds Holding B.V. Lighting device
KR102779280B1 (ko) * 2019-05-03 2025-03-12 삼성전자주식회사 Led 디스플레이 모듈, led 디스플레이 모듈의 제조 방법, 그리고 led 디스플레이 모듈을 포함하는 디스플레이 장치
CN110400519A (zh) * 2019-07-29 2019-11-01 京东方科技集团股份有限公司 背光模组及其制作方法、显示装置
CN110729282B (zh) * 2019-10-08 2021-02-19 武汉大学 一种Micro-LED显示芯片及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1178115A (ja) * 1997-09-12 1999-03-23 Ricoh Co Ltd 光学装置
US20030095751A1 (en) * 2001-11-17 2003-05-22 Rogers David Carnegie Semiconductor optical devices and methods of making them
US20140131836A1 (en) * 2006-05-05 2014-05-15 Invensas Corporation Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques
JP2016503958A (ja) * 2012-12-10 2016-02-08 ルクスビュー テクノロジー コーポレイション 発光素子反射バンク構造
US20200343230A1 (en) * 2018-01-24 2020-10-29 Apple Inc. Micro led based display panel

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GARCIA-GANCEDO, L. ET AL.: "Ultrafast sputtered ZnO thin films with high kT for acoustic wave device applications", 2010 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM, JPN6025037126, November 2010 (2010-11-01), ISSN: 0005822476 *

Also Published As

Publication number Publication date
US20240021656A1 (en) 2024-01-18
GB2601495A (en) 2022-06-08
WO2022117995A1 (en) 2022-06-09
GB2601495B (en) 2023-08-02
KR102950377B1 (ko) 2026-04-09
US12615901B2 (en) 2026-04-28
TW202236591A (zh) 2022-09-16
KR20230113558A (ko) 2023-07-31
GB202018920D0 (en) 2021-01-13
EP4256609A1 (en) 2023-10-11
EP4256609B1 (en) 2025-07-23
CN116529897A (zh) 2023-08-01

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