JP2023530125A - Ｒｆ信号のパラメータのパルス化周波数およびデューティサイクルの制御 - Google Patents

Ｒｆ信号のパラメータのパルス化周波数およびデューティサイクルの制御 Download PDF

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JP2023530125A
JP2023530125A JP2022577087A JP2022577087A JP2023530125A JP 2023530125 A JP2023530125 A JP 2023530125A JP 2022577087 A JP2022577087 A JP 2022577087A JP 2022577087 A JP2022577087 A JP 2022577087A JP 2023530125 A JP2023530125 A JP 2023530125A
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parameter
signal
level
generator
cycle
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Japanese (ja)
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JP2023530125A5 (https=
JPWO2021257331A5 (https=
Inventor
カンプ・トム・エー．
ワン・ユーホウ
マーティン・マイケル・ジョン
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Lam Research Corp
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Lam Research Corp
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Priority to JP2025169826A priority Critical patent/JP2026010023A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2022577087A 2020-06-15 2021-06-08 Ｒｆ信号のパラメータのパルス化周波数およびデューティサイクルの制御 Pending JP2023530125A (ja)

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JP2025169826A JP2026010023A (ja) 2020-06-15 2025-10-08 Ｒｆ信号のパラメータのパルス化周波数およびデューティサイクルの制御

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063039335P 2020-06-15 2020-06-15
US63/039,335 2020-06-15
PCT/US2021/036477 WO2021257331A1 (en) 2020-06-15 2021-06-08 Control of pulsing frequencies and duty cycles of parameters of rf signals

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JP2025169826A Division JP2026010023A (ja) 2020-06-15 2025-10-08 Ｒｆ信号のパラメータのパルス化周波数およびデューティサイクルの制御

Publications (3)

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JP2023530125A true JP2023530125A (ja) 2023-07-13
JP2023530125A5 JP2023530125A5 (https=) 2024-06-14
JPWO2021257331A5 JPWO2021257331A5 (https=) 2024-06-14

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JP2022577087A Pending JP2023530125A (ja) 2020-06-15 2021-06-08 Ｒｆ信号のパラメータのパルス化周波数およびデューティサイクルの制御
JP2025169826A Pending JP2026010023A (ja) 2020-06-15 2025-10-08 Ｒｆ信号のパラメータのパルス化周波数およびデューティサイクルの制御

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JP2025169826A Pending JP2026010023A (ja) 2020-06-15 2025-10-08 Ｒｆ信号のパラメータのパルス化周波数およびデューティサイクルの制御

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US (1) US12609283B2 (https=)
JP (2) JP2023530125A (https=)
KR (1) KR20230021751A (https=)
WO (1) WO2021257331A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12609283B2 (en) * 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
KR20260048616A (ko) * 2020-07-15 2026-04-10 램 리써치 코포레이션 플라즈마 챔버의 rf 코일들의 역 동기화된 펄싱
KR20260042206A (ko) * 2023-08-02 2026-03-30 램 리써치 코포레이션 더 높은 주파수 신호를 사용하여 내부 코일에 전력을 공급하고 더 높은 주파수 신호 및 더 낮은 주파수 신호의 혼합 신호를 사용하여 외부 코일에 전력을 공급하여 개선된 플라즈마 균일성

Citations (8)

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US20100130018A1 (en) * 2008-11-24 2010-05-27 Samsung Electronics Co., Ltd. Synchronous pulse plasma etching equipment and method of fabricating a semiconductor device
CN103021783A (zh) * 2012-12-24 2013-04-03 中微半导体设备(上海)有限公司 半导体结构的刻蚀方法
JP2014107363A (ja) * 2012-11-27 2014-06-09 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2015501518A (ja) * 2011-10-28 2015-01-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 位相制御による高効率トリプルコイル誘導結合プラズマ源
JP2015503223A (ja) * 2011-11-15 2015-01-29 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ハイブリッドパルス化プラズマ処理システム
JP2017143059A (ja) * 2016-01-11 2017-08-17 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマエッチングチャンバのための高速インピーダンス切り替えを備えた変圧器結合容量性同調回路
WO2018226468A1 (en) * 2017-06-08 2018-12-13 Lam Research Corporation Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching
WO2019046093A1 (en) * 2017-08-31 2019-03-07 Lam Research Corporation SYSTEMS AND METHODS FOR ENHANCED ION ENERGY IMPROVEMENT WITH LOW ANGULAR SIZE

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US20020044316A1 (en) * 2000-10-16 2002-04-18 Myers Michael H. Signal power allocation apparatus and method
US20030072051A1 (en) * 2000-10-16 2003-04-17 Myers Michael H. Orthogonal-code, photonic multiplexing
US8404598B2 (en) 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
US10325759B2 (en) * 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9365924B2 (en) * 2013-05-23 2016-06-14 Asm Ip Holding B.V. Method for forming film by plasma-assisted deposition using two-frequency combined pulsed RF power
US9761459B2 (en) * 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
US10546724B2 (en) * 2017-05-10 2020-01-28 Mks Instruments, Inc. Pulsed, bidirectional radio frequency source/load
US10950454B2 (en) * 2017-08-04 2021-03-16 Lam Research Corporation Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method
US11538713B2 (en) * 2017-12-05 2022-12-27 Lam Research Corporation System and method for edge ring wear compensation
US10224183B1 (en) 2018-03-21 2019-03-05 Lam Research Corporation Multi-level parameter and frequency pulsing with a low angular spread
US10854427B2 (en) 2018-08-30 2020-12-01 Applied Materials, Inc. Radio frequency (RF) pulsing impedance tuning with multiplier mode
TWM602283U (zh) * 2019-08-05 2020-10-01 美商蘭姆研究公司 基板處理系統用之具有升降銷溝槽的邊緣環
WO2021118862A2 (en) * 2019-12-13 2021-06-17 Lam Research Corporation Multi-state pulsing for achieving a balance between bow control and mask selectivity
KR20230010712A (ko) * 2020-05-14 2023-01-19 램 리써치 코포레이션 정전 척들 (electrostatic chucks) 의 증발 냉각 (evaporative cooling)
US12609283B2 (en) * 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
KR20260048616A (ko) * 2020-07-15 2026-04-10 램 리써치 코포레이션 플라즈마 챔버의 rf 코일들의 역 동기화된 펄싱
WO2022072234A1 (en) * 2020-09-29 2022-04-07 Lam Research Corporation Synchronization of rf generators
KR20230114184A (ko) * 2020-12-08 2023-08-01 램 리써치 코포레이션 저 주파수 RF 생성기 및 연관된 정전 척 (electrostatic chuck)

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100130018A1 (en) * 2008-11-24 2010-05-27 Samsung Electronics Co., Ltd. Synchronous pulse plasma etching equipment and method of fabricating a semiconductor device
JP2015501518A (ja) * 2011-10-28 2015-01-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 位相制御による高効率トリプルコイル誘導結合プラズマ源
JP2015503223A (ja) * 2011-11-15 2015-01-29 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ハイブリッドパルス化プラズマ処理システム
JP2014107363A (ja) * 2012-11-27 2014-06-09 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
CN103021783A (zh) * 2012-12-24 2013-04-03 中微半导体设备(上海)有限公司 半导体结构的刻蚀方法
JP2017143059A (ja) * 2016-01-11 2017-08-17 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマエッチングチャンバのための高速インピーダンス切り替えを備えた変圧器結合容量性同調回路
WO2018226468A1 (en) * 2017-06-08 2018-12-13 Lam Research Corporation Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching
WO2019046093A1 (en) * 2017-08-31 2019-03-07 Lam Research Corporation SYSTEMS AND METHODS FOR ENHANCED ION ENERGY IMPROVEMENT WITH LOW ANGULAR SIZE

Also Published As

Publication number Publication date
WO2021257331A1 (en) 2021-12-23
KR20230021751A (ko) 2023-02-14
US12609283B2 (en) 2026-04-21
US20230223236A1 (en) 2023-07-13
JP2026010023A (ja) 2026-01-21

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