JP2023502634A - スパッタ堆積の方法と装置 - Google Patents
スパッタ堆積の方法と装置 Download PDFInfo
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims description 41
- 239000000758 substrate Substances 0.000 claims abstract description 209
- 239000013077 target material Substances 0.000 claims abstract description 195
- 238000000151 deposition Methods 0.000 claims abstract description 87
- 230000008021 deposition Effects 0.000 claims abstract description 75
- 229910052744 lithium Inorganic materials 0.000 claims description 17
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 16
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- 238000009616 inductively coupled plasma Methods 0.000 claims description 7
- 229910000625 lithium cobalt oxide Inorganic materials 0.000 claims description 7
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001947 lithium oxide Inorganic materials 0.000 claims description 6
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 162
- 239000000463 material Substances 0.000 description 27
- 150000002500 ions Chemical class 0.000 description 12
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- 230000008569 process Effects 0.000 description 10
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- 238000004146 energy storage Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000003908 quality control method Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000009827 uniform distribution Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 3
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910001416 lithium ion Inorganic materials 0.000 description 3
- BFZPBUKRYWOWDV-UHFFFAOYSA-N lithium;oxido(oxo)cobalt Chemical compound [Li+].[O-][Co]=O BFZPBUKRYWOWDV-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000012805 post-processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 229910012305 LiPON Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000009831 deintercalation Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000002687 intercalation Effects 0.000 description 2
- 238000009830 intercalation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910012820 LiCoO Inorganic materials 0.000 description 1
- 229910032387 LiCoO2 Inorganic materials 0.000 description 1
- 229910012258 LiPO Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- CKFRRHLHAJZIIN-UHFFFAOYSA-N cobalt lithium Chemical compound [Li].[Co] CKFRRHLHAJZIIN-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002065 inelastic X-ray scattering Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910000398 iron phosphate Inorganic materials 0.000 description 1
- WBJZTOZJJYAKHQ-UHFFFAOYSA-K iron(3+) phosphate Chemical compound [Fe+3].[O-]P([O-])([O-])=O WBJZTOZJJYAKHQ-UHFFFAOYSA-K 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
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- 230000003685 thermal hair damage Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000002424 x-ray crystallography Methods 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H01J37/32082—Radio frequency generated discharge
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Abstract
Description
湾曲経路に沿って基板を導くように配置される、基板ガイドと、
基板ガイドから距離を空け、ターゲット材料を支持するように配置される、ターゲット部であって、ターゲット部と基板ガイドがそれらの間に堆積領域を画定する、ターゲット部と、
電気バイアスをターゲット材料に印加するためのバイアス手段と、
を含む、ターゲットアセンブリと、
使用中、基板にターゲット材料のスパッタ堆積をもたらすために、堆積領域にプラズマを閉じ込めるための閉じ込め磁場を供給するように配置される、一以上の磁性素子を備える閉じ込め配列であって、閉じ込め磁場が、湾曲経路の曲線の周りに、前記プラズマを閉じ込めるために、少なくとも堆積領域において、湾曲経路の曲線に実質的に追従するように配置される磁力線により特徴づけられる、閉じ込め配列と、
を備える。
電気バイアスをターゲット材料に印加することと、
基板上にターゲット材料をスパッタ堆積させるために、堆積領域にプラズマを閉じ込める磁場を供給することと、を含み、
該磁場が、湾曲経路周りに前記プラズマを閉じ込めるために、少なくとも堆積領域内において、湾曲経路の曲線に実質的に追従するように配置される磁力線により特徴づけられる。
以下のシェラーの式により、材料の結晶子サイズτが得られる。
ここで、τは、材料の規則的な(結晶性の)ドメインの平均サイズとされ、材料の粒子サイズ以下になり得る結晶子サイズ、Kは無次元の形状係数、λはX線の波長、βはラジアンを単位とする、(装置の回折線幅を差し引いた後の)X線回折パターンにおけるピークの回折線幅の広がり、θはブラッグ角である。
に属するものであり得る。
の構造は、層状構造であり、及び層状酸化物構造であり得、例えば、ターゲット材料は、LiCoO2である。この構造は、(LiCoO2のFd3m空間群に属する)低エネルギー構造と比較して、使用可能容量が大きいことや、充電及び放電が高速である等の多数の利点がある。
は、可逆性が高く、リチウムのインターカレーションとデインターカレーションにおいて構造変化が小さいため、典型的な電池用途において良い性能を有すると考えられる。したがって、堆積されるターゲット材料108として
に属する結晶性LiCoO2を堆積させることは、固体電池用途に有利に働く。しかし、これは単なる一例であり、他の例、例えば他の用途については、堆積されるターゲット材料108が、異なる化学構造及び/又は結晶構造を有してもよい。
Claims (25)
- スパッタ堆積装置であって、
湾曲経路に沿って基板を導くように配置される、基板ガイドと、
基板ガイドから距離を空け、ターゲット材料を支持するように配置される、ターゲット部であって、ターゲット部と基板ガイドがそれらの間に堆積領域を画定する、ターゲット部と、
電気バイアスをターゲット材料に印加するためのバイアス手段と、
を備える、ターゲットアセンブリと、
使用中、基板にターゲット材料のスパッタ堆積をもたらすために、堆積領域にプラズマを閉じ込めるための閉じ込め磁場を供給するように配置される、一以上の磁性素子を備える閉じ込め配列であって、閉じ込め磁場が、湾曲経路の曲線の周りに、前記プラズマを閉じ込めるために、少なくとも堆積領域において、湾曲経路の曲線に実質的に追従するように配置される磁力線により特徴づけられる、閉じ込め配列と、
を備える、スパッタ堆積装置。 - バイアス手段が、負極性の電気バイアスをターゲット材料に印加するように構成される、請求項1に記載の装置。
- バイアス手段が、直流電圧から成る電気バイアスをターゲット材料に印加するように構成される、請求項1又は2に記載の装置。
- 装置が、プラズマを発生させるように構成される、プラズマ生成配列をさらに備える、請求項1から3のいずれか一項に記載の装置。
- バイアス手段が、第一電力値で、電気バイアスをターゲット材料に印加するように構成され、
プラズマ生成配列が、第一電力値に対する第二電力値の比率が1より大きくなるような、第二電力値で、プラズマを発生させるように構成される、請求項4に記載の装置。 - 第一電力値に対する第二電力値の比率が、3.5未満又は1.5未満である、請求項5に記載の装置。
- 第一電力値が、1平方センチメートル当たり少なくとも1ワット(1W cm-2)である、請求項5又は6に記載の装置。
- 第一電力値が、1平方センチメートル当たり最大で15ワット(15W cm-2)、1平方センチメートル当たり最大で70ワット(70W cm-2)である、請求項5から7のいずれか一項に記載の装置。
- プラズマ生成配列が、誘導結合プラズマ源を備える、請求項4から8のいずれか一項に記載の装置。
- プラズマ生成配列が、基板ガイドの長手方向軸に実質的に垂直な方向に延在する、一以上の細長いアンテナを備える、請求項4から9のいずれか一項に記載の装置。
- プラズマ生成配列が、基板ガイドの長手方向軸に実質的に平行な方向に延在する、一以上の細長いアンテナを備える、請求項4から9のいずれか一項に記載の装置。
- ターゲット部が、複数のターゲット材料を支持するように配置され、
バイアス手段が、複数のターゲット材料の一以上の各ターゲット材料に電気バイアスを独立して印加するように構成される、請求項1から11のいずれか一項に記載の装置。 - 一以上の磁性素子が、プラズマを湾曲シート状に閉じ込めるための閉じ込め磁場を供給するように配置される、請求項1から12のいずれか一項に記載の装置。
- 一以上の磁性素子が、少なくとも堆積領域において、実質的に均一な密度を有するプラズマを、湾曲シート状に閉じ込めるための閉じ込め磁場を供給するように配置される、請求項1から13のいずれか一項に記載の装置。
- 一以上の磁性素子が、電磁石である、請求項1から14のいずれか一項に記載の装置。
- 装置が、一以上の電磁石により供給される磁場を制御するように配置されるコントローラーを備える、請求項17に記載の装置。
- 閉じ込め配列が、閉じ込め磁場を供給するように配置される、少なくとも二つの磁性素子を備える、請求項1から16のいずれか一項に記載の装置。
- 少なくとも二つの磁性素子が、磁性素子間で供給される比較的強い磁場強度の領域が、湾曲経路の曲線に実質的に追従するように配置される、請求項17に記載の装置。
- ターゲット部が、ターゲット部の少なくとも一部分が、ターゲット部の他の一部分の支持面に対して鈍角を形成する支持面を画定するように配置されるか、又は配置されるように構成可能である、請求項1から18のいずれか一項に記載の装置。
- ターゲット部が、実質的に湾曲している、請求項1から19のいずれか一項に記載の装置。
- ターゲット部が、湾曲経路の曲線に実質的に追従するように又は近似するように配置される、請求項1から20のいずれか一項に記載の装置。
- 基板ガイドが、湾曲経路に沿って基板を導く湾曲部材により提供される、請求項1から21のいずれか一項に記載の装置。
- 基板にターゲット材料をスパッタ堆積する方法であって、基板が、基板ガイドにより湾曲経路に沿って導かれ、堆積領域が基板ガイドとターゲット材料を支持するターゲット部の間に画定され、
電気バイアスをターゲット材料に印加することと、
基板にターゲット材料をスパッタ堆積させるために、堆積領域でプラズマを閉じ込めるための磁場を供給することと、を含み、
該磁場が、湾曲経路の周りに前記プラズマを閉じ込めるように、少なくとも堆積領域において、湾曲経路の曲線に実質的に追従するように配置される磁力線により特徴づけられる、
方法。 - リチウム、コバルト、リチウム酸化物、コバルト酸化物、及びコバルト酸リチウムのうち少なくとも一つを含むターゲット材料を提供することを含む、請求項23に記載の方法。
- 電気バイアスをターゲットに印加することが、第一電力値で電気バイアスを印加することを含み、
方法が、第一電力値に対する第二電力値の比率が1より大きくなるような、第二電力値でプラズマを発生させることを含む、請求項23又は24に記載の方法。
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