JP2023180486A5 - - Google Patents

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JP2023180486A5
JP2023180486A5 JP2022093842A JP2022093842A JP2023180486A5 JP 2023180486 A5 JP2023180486 A5 JP 2023180486A5 JP 2022093842 A JP2022093842 A JP 2022093842A JP 2022093842 A JP2022093842 A JP 2022093842A JP 2023180486 A5 JP2023180486 A5 JP 2023180486A5
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film
crystal
axis
crystal grains
scaln
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JP2023180486A (ja
JP7896358B2 (ja
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Priority to CN202310646405.1A priority patent/CN117222301A/zh
Priority to US18/330,988 priority patent/US20230413675A1/en
Publication of JP2023180486A publication Critical patent/JP2023180486A/ja
Publication of JP2023180486A5 publication Critical patent/JP2023180486A5/ja
Priority to JP2026036585A priority patent/JP2026077959A/ja
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JP2022093842A 2022-06-09 2022-06-09 圧電膜積層体およびその製造方法 Active JP7896358B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2022093842A JP7896358B2 (ja) 2022-06-09 2022-06-09 圧電膜積層体およびその製造方法
CN202310646405.1A CN117222301A (zh) 2022-06-09 2023-06-02 压电膜层叠体及其制造方法
US18/330,988 US20230413675A1 (en) 2022-06-09 2023-06-07 Piezoelectric film laminated body and manufacturing method of the same
JP2026036585A JP2026077959A (ja) 2022-06-09 2026-03-06 圧電膜積層体およびその製造方法

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JP2022093842A JP7896358B2 (ja) 2022-06-09 2022-06-09 圧電膜積層体およびその製造方法

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JP2026036585A Division JP2026077959A (ja) 2022-06-09 2026-03-06 圧電膜積層体およびその製造方法

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JP2023180486A JP2023180486A (ja) 2023-12-21
JP2023180486A5 true JP2023180486A5 (cg-RX-API-DMAC7.html) 2024-08-02
JP7896358B2 JP7896358B2 (ja) 2026-07-29

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JP2026036585A Pending JP2026077959A (ja) 2022-06-09 2026-03-06 圧電膜積層体およびその製造方法

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US (1) US20230413675A1 (cg-RX-API-DMAC7.html)
JP (2) JP7896358B2 (cg-RX-API-DMAC7.html)
CN (1) CN117222301A (cg-RX-API-DMAC7.html)

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* Cited by examiner, † Cited by third party
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DE10035423C1 (de) * 2000-07-20 2001-11-22 Infineon Technologies Ag Halbleiterbauelement mit einer Schichtenfolge zum ineinander Umwandeln von akustischen oder thermischen Signalen und elektrischen Spannungsänderungen und Verfahren zu dessen Herstellung
JP2005179167A (ja) * 2003-06-30 2005-07-07 Kenichiro Miyahara 薄膜形成用基板、薄膜基板及び発光素子
US8114307B2 (en) * 2006-09-15 2012-02-14 Canon Kabushiki Kaisha Piezoelectric body and liquid discharge head
JP5190841B2 (ja) * 2007-05-31 2013-04-24 独立行政法人産業技術総合研究所 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー
JP5598948B2 (ja) * 2009-07-01 2014-10-01 独立行政法人産業技術総合研究所 圧電体薄膜の製造方法および当該製造方法により製造される圧電体薄膜
JP5510403B2 (ja) * 2011-07-04 2014-06-04 株式会社デンソー 結晶軸傾斜膜の製造方法
JP6551059B2 (ja) * 2015-08-27 2019-07-31 国立研究開発法人物質・材料研究機構 ＳｉＣ繊維を含むハイブリッド複合材料およびその製造方法
KR20180107212A (ko) * 2016-03-25 2018-10-01 엔지케이 인슐레이터 엘티디 접합 방법
JP2019161634A (ja) * 2018-03-07 2019-09-19 住友金属鉱山株式会社 表面弾性波素子用複合基板とその製造方法
JP7061752B2 (ja) * 2018-08-31 2022-05-02 Tdk株式会社 強誘電性薄膜、強誘電性薄膜素子、圧電アクチュエータ、圧電センサ、ヘッドアセンブリ、ヘッドスタックアセンブリ、ハードディスクドライブ、プリンタヘッド、及びインクジェットプリンタ装置
JP7359169B2 (ja) * 2020-11-03 2023-10-11 株式会社デンソー 圧電素子、圧電装置、および圧電素子の製造方法

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