JP2023156155A - Vacuum processing apparatus and vacuum processing method - Google Patents

Abstract

To improve the yield of sputtering film deposition.SOLUTION: A vacuum processing apparatus includes a rotary target, a magnetic field generation mechanism, a substrate holder, an anti-adhesion plate, a plurality of first sensors and a plurality of second sensors. The magnetic field generation mechanism includes: a plurality of magnetic circuit parts facing a second main surface, arranged in the uniaxial direction and rotatable around the central axis; and a movement mechanism capable of changing a distance between each of the plurality of magnetic circuit parts and the rotary target. The plurality of first sensors measure the decrement of the thickness of the rotary target after discharging the sputtering particles from a first main surface. The plurality of second sensors measure a magnetic force leaking through the first main surface of the rotary target from any of the plurality of magnetic circuit parts when any of the plurality of magnetic circuit parts faces the anti-adhesion plate.SELECTED DRAWING: Figure 1

Description

The present invention relates to a vacuum processing apparatus and a vacuum processing method.

Among sputtering film formation methods, there is a magnetron sputtering method in which a magnet is placed on the back surface of a sputtering target and sputtering film formation is performed. In magnetron sputtering, it is desired that the quality (for example, film thickness) of a sputtered film formed on a substrate be more uniform within the plane of the substrate.

Under these circumstances, in order to obtain a sputtered film with uniform film quality, a technology is being developed that uses a rotary target as a sputtering target and periodically changes the direction of the magnet placed inside the rotary target during sputtering film formation. (For example, see Patent Document 1).

Patent No. 6385487

However, in order to mass produce sputtered films, if sputtering film formation is performed continuously over a long period of time, the sputtering target may be partially dug out, and the magnets may receive heat from the plasma, causing damage to the support base that supports the magnets. deforms, resulting in a phenomenon in which the film formation rate changes over time. As a result, a situation arises in which the yield of sputtering film formation does not improve.

In view of the above circumstances, an object of the present invention is to provide a vacuum processing apparatus and a vacuum processing method that improve the yield of sputtering film formation.

In order to achieve the above object, a vacuum processing apparatus according to one embodiment of the present invention includes a cylindrical rotary target, a magnetic field generation mechanism, a substrate holder, an adhesion prevention plate, a plurality of first sensors, and a plurality of first sensors. 2 sensors.
The rotary target includes a first main surface that emits sputtered particles and a second main surface opposite to the first main surface, and has a central axis extending in a uniaxial direction. rotate around.
The magnetic field generation mechanism includes a plurality of magnetic circuit sections facing the second main surface, arranged in parallel in the uniaxial direction, and rotatable around the central axis, each of the plurality of magnetic circuit sections and the rotary and a movement mechanism that changes the distance between the target and the target.
The substrate holder can support a substrate facing the first main surface and on which the sputtered particles are deposited.
The adhesion prevention plate is disposed on the opposite side of the rotary target from the substrate holder.
The plurality of first sensors are provided on the deposition prevention plate so as to face the first main surface of the rotary target, and are configured to measure the thickness of the rotary target after the sputtered particles are released from the first main surface. Measure the amount of decrease.
The plurality of second sensors are provided on the adhesion prevention plate so as to face the first main surface of the rotary target, and when any of the plurality of magnetic circuit parts faces the adhesion prevention plate, A magnetic force leaking from any one of the plurality of magnetic circuit sections through the first main surface of the rotary target is measured.

According to such a vacuum processing apparatus, the yield of sputtering film formation is improved.

The vacuum processing apparatus may further include a control unit that controls operations of the rotary target, the magnetic field generation mechanism, the first sensor, and the second sensor.
In the above control section,
The relationship between the distance between any one of the plurality of first sensors and the first main surface and the amount of decrease in the thickness of the rotary target facing one of the plurality of first sensors;
A relationship between a magnetic field intensity detected by any one of the plurality of second sensors and a distance between one of the plurality of second sensors and the magnetic circuit section may be stored.
The control unit is configured to connect one of the plurality of second sensors and the plurality of second sensors so that the magnetic field intensity formed on the first main surface from any of the plurality of magnetic circuit units becomes a target value. The distance between one of the opposing magnetic circuit parts may be adjusted.

According to such a vacuum processing apparatus, the yield of sputtering film formation is improved.

In the vacuum processing apparatus, a plurality of the rotary targets may be arranged in parallel in a direction intersecting the uniaxial direction.

According to such a vacuum processing apparatus, the yield of sputtering film formation is improved.

In order to achieve the above object, in a vacuum processing method according to one embodiment of the present invention,
A cylinder that includes a first main surface that emits sputtered particles and a second main surface opposite to the first main surface, has a central axis extending in a uniaxial direction, and rotates around the central axis. A rotary target shaped like
a plurality of magnetic circuit sections facing the second principal surface, arranged in parallel in the uniaxial direction, and rotatable around the central axis; and a distance between each of the plurality of magnetic circuit sections and the rotary target. a magnetic field generating mechanism having a moving mechanism for changing the
a substrate holder that faces the first main surface and is capable of supporting a substrate on which the sputtered particles are deposited;
The substrate holder includes an anti-adhesion plate placed on the opposite side of the rotary target,
A plurality of electrodes are provided on the adhesion prevention plate so as to face the first main surface of the rotary target, and are configured to measure the amount of decrease in the thickness of the rotary target after the sputtered particles are released from the first main surface. 1 sensor and
The adhesion prevention plate is provided so as to face the first main surface of the rotary target, and when any of the plurality of magnetic circuit parts faces the adhesion prevention plate, any one of the plurality of magnetic circuit parts A plurality of second sensors are prepared to measure magnetic force leaking through the first main surface of the rotary target, and the sputtered particles are deposited on the substrate.

According to such a vacuum processing method, the yield of sputtering film formation is improved.

In the above vacuum processing method,
The relationship between the distance between any one of the plurality of first sensors and the first main surface and the amount of decrease in the thickness of the rotary target facing one of the plurality of first sensors;
The relationship between the magnetic field strength detected by any one of the plurality of second sensors and the distance between one of the plurality of second sensors and the magnetic circuit section facing each of the plurality of second sensors is may be obtained.
One of the plurality of second sensors faces one of the plurality of second sensors so that the magnetic field intensity formed on the first main surface from one of the plurality of magnetic circuit parts becomes a target value. The distance between the magnetic circuit section and the magnetic circuit section may be adjusted.

According to such a vacuum processing method, the yield of sputtering film formation is improved.

In the vacuum processing method, a plurality of rotary targets may be arranged in parallel in a direction intersecting the uniaxial direction, and the sputtered particles may be deposited on the substrate.

According to such a vacuum processing method, the yield of sputtering film formation is improved.

As described above, the present invention provides a vacuum processing apparatus and a vacuum processing method that improve the yield of sputtering film formation.

FIG. 1 is a schematic cross-sectional view showing an example of a vacuum processing apparatus according to the present embodiment. FIG. 2 is a schematic cross-sectional view taken along the line A1-A2 in FIG. 1. FIG. FIG. 2 is a schematic cross-sectional view showing an example of sputtering film formation. FIG. 2 is a schematic cross-sectional view showing an example of sputtering film formation. FIG. 2 is a schematic cross-sectional view showing an example of sputtering film formation. It is a typical sectional view showing the definition of distance between members. FIG. 3 is a flowchart summarizing the operation procedure of the magnetic circuit section listed in Tables 1 to 3. FIG. FIG. 3 is a schematic cross-sectional view showing another example of the vacuum processing apparatus of the present embodiment.

Embodiments of the present invention will be described below with reference to the drawings. In each drawing, XYZ axis coordinates may be introduced. In addition, the same members or members having the same function may be given the same reference numerals, and the description may be omitted as appropriate after the member has been described. Further, the numerical values shown below are just examples, and are not limited to these examples.

FIG. 1 is a schematic cross-sectional view showing an example of the vacuum processing apparatus of this embodiment. As the vacuum processing apparatus 1 illustrated in FIG. 1, a sputtering film forming apparatus is shown.

The vacuum processing apparatus 1 includes a cylindrical rotary target 20, a magnetic field generation mechanism 30, a substrate holder 91, a plurality of distance sensors 41, 42, 43, 44, 45 (first sensors), and a plurality of magnetic sensors 51. , 52, 53, 54, 55 (first sensors), and an adhesion prevention plate 60. The rotary target 20, the magnetic field generation mechanism 30, the substrate holder 91, the plurality of distance sensors 41 to 45, the plurality of magnetic sensors 51 to 55, and the adhesion prevention plate 60 are housed in a vacuum chamber (not shown) that can maintain reduced pressure. . The vacuum chamber is connected to an exhaust mechanism (not shown). A discharge gas such as Ar is supplied to the vacuum chamber from a gas supply mechanism (not shown). The vacuum processing apparatus 1 also includes a rotation mechanism (not shown) that rotates the rotary target 20 and the magnetic field generation mechanism 30. The vacuum processing apparatus 1 also includes a control unit 70 that controls the operations of the rotary target 20, the magnetic field generation mechanism 30, the distance sensors 41 to 45, the magnetic sensors 51 to 55, the exhaust mechanism, the gas supply mechanism, and the rotation mechanism. Be equipped.

The rotary target 20 is, for example, a cylindrical sputtering target. Predetermined power (DC power, AC power, etc.) is supplied to the rotary target 20 from a power source (not shown). The rotary target 20 includes a cylindrical target material 21 and a cylindrical backing tube 22 that supports the target material 21. Further, the rotary target 20 has a central axis 20c extending in one axis direction (X-axis direction). The rotary target 20 rotates around a central axis 20c. The rotary target 20 includes a sputtering surface 201 (first main surface) that emits sputtered particles, and a back surface 202 (second main surface) opposite to the sputtering surface 201.

The magnetic field generation mechanism 30 is provided inside the rotary target 20. The magnetic field generation mechanism 30 includes a plurality of magnetic circuit sections 311 , 312 , 313 , 314 , and 315 , a plurality of moving mechanisms 331 , 332 , 333 , 334 , and 335 , and a support plate 32 .

Each of the plurality of magnetic circuit sections 311 to 315 faces the back surface 202 of the rotary target 20. Each of the plurality of magnetic circuit sections 311 to 315 is arranged in parallel in a uniaxial direction (direction of the central axis 20c). Each of the plurality of magnetic circuit sections 311 to 315 includes, for example, a permanent magnet. As a result, a leakage magnetic field is formed on the sputtering surface 201 from each of the magnetic circuit sections 311 to 315. Each of the plurality of magnetic circuit sections 311 to 315 is configured to be rotatable around the central axis 20c.

Each of the moving mechanisms 331 to 335 supports one of the plurality of magnetic circuit sections 311 to 315. For example, the moving mechanism 331 supports the magnetic circuit section 311. The moving mechanism 332 supports the magnetic circuit section 312. The moving mechanism 333 supports the magnetic circuit section 313. The moving mechanism 334 supports the magnetic circuit section 314. The moving mechanism 335 supports the magnetic circuit section 315.

Each of the moving mechanisms 331 to 335 can change the distance between any one of the plurality of magnetic circuit parts 311 to 315 and the rotary target 20. For example, the moving mechanism 331 can change the distance between the magnetic circuit section 311 and the rotary target 20. The moving mechanism 332 can change the distance between the magnetic circuit section 312 and the rotary target 20. The moving mechanism 333 can change the distance between the magnetic circuit section 313 and the rotary target 20. The moving mechanism 334 can change the distance between the magnetic circuit section 314 and the rotary target 20. The moving mechanism 335 can change the distance between the magnetic circuit section 315 and the rotary target 20.

The number of the plurality of magnetic circuit sections is not limited to the number shown in the drawings, but may be changed as appropriate depending on the length of the rotary target 20. The number of moving mechanisms is also changed according to the number of multiple magnetic circuit sections.

The support plate 32 supports each of the moving mechanisms 331 to 335. The support plate 32 supports the magnetic circuit section 311 via the moving mechanism 331. The support plate 32 supports the magnetic circuit section 312 via a moving mechanism 332. The support plate 32 supports the magnetic circuit section 313 via a moving mechanism 333. The support plate 32 supports the magnetic circuit section 314 via a moving mechanism 334. The support plate 32 supports the magnetic circuit section 315 via a moving mechanism 335. Further, the support plate 32 extends in a uniaxial direction. The support plate 32 can rotate around the central axis 20c. This allows each of the plurality of magnetic circuit sections 311 to 315 to rotate around the central axis 20c.

The adhesion prevention plate 60 is arranged on the opposite side of the substrate holder 91 with the rotary target 20 interposed therebetween. The rotary target 20 is arranged between the adhesion prevention plate 60 and the substrate holder 91. The adhesion prevention plate 60 is provided with a plurality of distance sensors 41 to 45 and a plurality of magnetic sensors 51 to 55 facing the rotary target 20. The adhesion prevention plate 60 is connected to, for example, a ground potential.

Each of the plurality of distance sensors 41 to 45 is provided on the adhesion prevention plate 60 so as to face the sputtering surface 201 of the rotary target 20. Each of the plurality of distance sensors 41 to 45 is arranged in parallel in one axis direction. For example, the distance sensor 41 is provided on the adhesion prevention plate 60 so as to be adjacent to the magnetic sensor 51. The distance sensor 42 is provided on the adhesion prevention plate 60 so as to be adjacent to the magnetic sensor 52 . The distance sensor 43 is provided on the adhesion prevention plate 60 so as to be adjacent to the magnetic sensor 53. The distance sensor 44 is provided on the adhesion prevention plate 60 so as to be adjacent to the magnetic sensor 54 . The distance sensor 45 is provided on the adhesion prevention plate 60 so as to be adjacent to the magnetic sensor 55 . The direction in which they are adjacent to each other may be a uniaxial direction or the direction of rotation of the rotary target 20.

Each of the plurality of distance sensors 41 to 45 includes, for example, optical measuring means such as a laser distance meter. Each of the plurality of distance sensors 41 to 45 measures the amount of decrease in the thickness of the rotary target 20 after sputtering particles are released from the sputtering surface 201.

Each of the plurality of magnetic sensors 51 to 55 is provided on the adhesion prevention plate 60 so as to face the sputtering surface 201 of the rotary target 20. Each of the plurality of magnetic sensors 51 to 55 is arranged in parallel in one axis direction. Each of the plurality of magnetic sensors 51 to 55 is configured such that when any one of the plurality of magnetic circuit parts 311 to 315 faces the adhesion prevention plate 60 by a rotational movement about the central axis 20c, the plurality of magnetic circuit parts 311 to 315 respectively 315, the magnetic field strength (magnetic force) leaking through the sputtering surface 201 of the rotary target 20 is measured.

For example, when the magnetic circuit section 311 faces the adhesion prevention plate 60, the magnetic sensor 51 opposes the magnetic circuit section 311 and measures the magnetic force leaking from the magnetic circuit section 311 through the sputtering surface 201 of the rotary target 20. do. The magnetic sensor 52 faces the magnetic circuit part 312 when the magnetic circuit part 312 faces the adhesion prevention plate 60, and measures the magnetic force leaking from the magnetic circuit part 312 through the sputtering surface 201 of the rotary target 20. The magnetic sensor 53 faces the magnetic circuit part 313 when the magnetic circuit part 313 faces the adhesion prevention plate 60, and measures the magnetic force leaking from the magnetic circuit part 313 through the sputtering surface 201 of the rotary target 20. The magnetic sensor 54 faces the magnetic circuit part 314 when the magnetic circuit part 314 faces the adhesion prevention plate 60, and measures the magnetic force leaking from the magnetic circuit part 314 through the sputtering surface 201 of the rotary target 20. The magnetic sensor 55 faces the magnetic circuit part 315 when the magnetic circuit part 315 faces the adhesion prevention plate 60 and measures the magnetic force leaking from the magnetic circuit part 315 through the sputtering surface 201 of the rotary target 20.

The substrate holder 91 can support a substrate 90 that is a target of vacuum processing. Substrate 90 faces sputtering surface 201 . Sputtered particles emitted from the sputtering surface 201 are deposited on the substrate 90 . The substrate holder 91 may be a fixed type substrate holder in which the relative distance between the substrate holder 91 and the rotary target 20 does not change during sputtering film formation, or a sliding type substrate holder in which the relative distance between the substrate holder 91 and the rotary target 20 changes. But that's fine. For example, when the substrate holder 91 is a sliding type substrate holder, the substrate 90 and the substrate holder 91 move in a direction perpendicular to the uniaxial direction (Y-axis direction) during sputtering film formation.

The operation of the vacuum processing apparatus 1 and the vacuum processing method will be described with reference to the A1-A2 cross section in FIG.

2(a) and 2(b) are schematic cross-sectional views taken along the line A1-A2 in FIG. In the following, the magnetic circuit section 311 is shown among the magnetic circuit sections 311 to 315, and the moving mechanism 331 is shown among the moving mechanisms 331 to 335. The cross-sectional structure and operation shown using the magnetic circuit section 311 and the moving mechanism 331 include the magnetic circuit sections 312 to 315 other than the magnetic circuit section 311, the moving mechanisms 332 to 335 other than the moving mechanism 331, and the distances other than the distance sensor 41. The present invention is also applied to magnetic sensors 52 to 55 other than the sensors 42 to 45 and the magnetic sensor 51.

FIG. 2A shows an example when the vacuum processing apparatus 1 is performing sputtering film formation. During sputtering film formation, the magnetic circuit section 311 is directed toward the substrate 90 side or the substrate holder 91 side. The rotary target 20 rotates at a predetermined angular velocity during sputtering film formation. In FIG. 2A, a state in which the magnetic circuit portion 311 (for example, the center magnet 311a) is closest to the substrate 90 is illustrated. In this embodiment, the rotation angle θ of the magnetic circuit section 311 in this state is set to 0 degrees (reference value). Furthermore, clockwise rotation from 0 degrees (reference value) is defined as a positive angle, and counterclockwise rotation is defined as a negative angle. During sputtering film formation, the rotation angle θ does not need to be set to 0 degrees, and may be shifted to the positive or negative side. This example will be discussed later.

The magnetic circuit section 311 includes a magnet 311a placed at the center and magnets 311b and 311c placed on both sides of the magnet 311a. The magnets 311a, 311b, and 311c are supported by, for example, a base material (yoke plate) 311p. The polarity of the magnetic circuit section 311 is configured such that the central magnet 311a has an S pole, and the magnets 311b and 311c on both sides have an N pole. With this configuration, the magnetic field leaked from the magnetic circuit section 311 through the sputtering surface 201 and formed on the sputtering surface 201 efficiently converges electrons and charged particles.

By rotating the magnetic circuit section 311 around the central axis 20c of the rotary target 20, plasma is concentrated near the sputtering surface 201 that the magnetic circuit section 311 faces during magnetron discharge. As a result, sputtered particles can be preferentially emitted from the sputtering surface 201 facing the magnetic circuit section 311. Furthermore, the direction in which sputtered particles are emitted from the sputtering surface 201 can be changed depending on the rotation angle θ of the magnetic circuit section 311.

The moving mechanism 331 supported by the support plate 32 has a slide mechanism (extendable rod) 331r. As the slide mechanism 331r expands and contracts in the longitudinal direction of the slide mechanism 331r, the magnetic circuit section 311 approaches or moves away from the rotary target 20. Thereby, the magnetic field formed on the sputtering surface 201 can be pushed out toward the substrate 90 or pulled toward the central axis 20c. In other words, the magnetic field formed on the sputtering surface 201 can be strengthened or weakened by expanding and contracting the slide mechanism 331r.

FIG. 2(b) shows an example when the vacuum processing apparatus 1 stops sputtering film formation. When sputtering film formation is stopped, the magnetic circuit section 311 rotates to the side opposite to the substrate 90 or the substrate holder 91, and the magnetic circuit section 311 (for example, the center magnet 311a) is attached to the adhesion prevention plate 60. Located closest to each other. At this time, the magnetic sensor 51 measures the magnetic field strength (for example, horizontal magnetic field strength (gauss)) leaking from the sputtering surface 201 that the magnetic sensor 51 faces.

The magnetic field intensity detected by the magnetic sensor 51 changes depending on the distance between the magnetic sensor 51 and the magnetic circuit section 311 that the magnetic sensor 51 faces. For example, the longer the distance between the magnetic sensor 51 and the magnetic circuit section 311 that the magnetic sensor 51 faces, the weaker the magnetic field strength detected by the magnetic sensor 51 becomes.

For example, the control unit 70 includes the magnetic field intensity detected by any one of the plurality of magnetic sensors 51 to 55, and the magnetic circuit in which one of the plurality of magnetic sensors 51 to 55 faces one of the plurality of magnetic sensors 51 to 55. The relationship between the distance and the parts 311 to 315 is stored. For example, the relationship between the magnetic field strength detected by any one of the plurality of magnetic sensors 51 to 55 and the distance between any one of the magnetic sensors and the magnetic circuit section facing the one magnetic sensor is stored. has been done. This correlation has been determined in advance through experiments, simulations, and the like. For example, the relationship between the magnetic field strength detected by any one of the plurality of magnetic sensors 51 to 55 and the distance between the magnetic circuit section facing any of the magnetic sensors is (magnetic field strength)=A×exp( −B×(distance)) (A and B are coefficients). In other words, the distance between the magnetic sensor 51 and the magnetic circuit section 311 can be calculated by the magnetic sensor 51 detecting the magnetic field strength of the magnetic circuit section 311 that the magnetic sensor 51 faces.

Further, when sputtering film formation is stopped, the distance sensor 41 measures the distance (mm) between the distance sensor 41 and the sputtering surface 201 that the distance sensor 41 faces. The correlation between the distance (mm) between the distance sensor 41 and the sputtering surface 201 and the thickness (mm) of the target material 21 is determined in advance through experiments, simulations, etc. The correlation is stored in the control unit 70.

For example, the initial thickness of the target material 21 (before starting sputtering film formation) is T ₀ (mm), and the initial distance between the distance sensor 41 and the sputtering surface 201 is D ₀ (mm). In this case, if the target material 21 is reduced by t (mm) due to sputtering film formation, the thickness of the target material 21 becomes T ₀ - t (mm) (t≦T ₀ ), and the distance sensor 41 and the sputtering surface 201 is D ₀ +t (mm). That is, by measuring the distance between the distance sensor 41 and the sputtering surface 201, the thickness T ₀ -t (mm) of the target material 21 after the start of sputtering film formation can be determined.

The control unit 70 determines the distance (D ₀ +t (mm)) between any one of the plurality of distance sensors 41 to 45 and the sputtering surface 201, and the distance between the rotary target 20 (target The relationship with the amount of decrease (-t (mm)) in the thickness of the material 21) is stored. For example, the relationship between the distance between any one of the plurality of distance sensors 41 to 45 and the sputtering surface 201 and the amount of decrease in the thickness of the target material 21 facing any one of the distance sensors is stored. The control unit 70 determines the amount of decrease (-t (mm)) from the distance (D ₀ +t (mm)), and further calculates the thickness (T ₀ -t (mm)) of the target material 21.

When the magnetic sensor 51 measures the strength of the magnetic field leaking from the sputtering surface 201 or when the distance sensor 41 detects the thickness of the target material 21, the rotary target 20 may be rotated. The rotation may be stopped. However, when the distance sensor 41 detects the average thickness of one circumference of the target material 21, it is desirable to detect the thickness of the target material 21 while rotating the rotary target 20.

3(a) to 5(b) are schematic cross-sectional views showing an example of sputtering film formation. In FIGS. 3(a) to 5(b), the adhesion prevention plate 60, the distance sensor 41, and the magnetic sensor 51 are omitted, and the substrate 90 and the substrate holder 91 are omitted.

First, before starting sputtering film formation, as shown in FIG. 3A, the magnetic circuit section 311 is made to face the adhesion prevention plate 60. The magnetic sensor 51 measures the magnetic field strength in a state where the magnetic circuit section 311 is opposed to the adhesion prevention plate 60. Here, the control unit 70 stores the relationship between the magnetic field intensity detected by the magnetic sensor 51 and the distance between the magnetic sensor 51 and the magnetic circuit unit 311 facing the magnetic sensor 51. Therefore, from the magnetic field intensity detected by the magnetic sensor 51, the distance between the magnetic sensor 51 and the magnetic circuit section 311 before starting sputtering film formation can be determined. Note that in the next sputtering film formation, the detection shown in FIG. 3(a) may be omitted as appropriate.

Next, as shown in FIG. 3B, a predetermined power is supplied to the rotary target 20 while the rotation angle θ of the magnetic circuit section 311 is shifted from the reference value to a predetermined rotation angle, and sputtering film formation is performed. will be started. Here, since electrons and charged particles are focused on the magnetic field formed on the sputtering surface 201, plasma with high plasma density is formed near the magnetic field formed on the sputtering surface 201. Therefore, the sputtered film formed on the substrate 90 may be damaged by the plasma. To avoid this, for example, sputtering film formation is performed with the rotation angle θ shifted clockwise (eg, +20 to +40 degrees). By shifting the rotation angle θ clockwise by a predetermined angle, the distance between the substrate 90 and the plasma is greater than when the rotation angle θ is 0 degrees, and the sputtered film is less likely to be damaged by the plasma.

However, if sputtering film formation is continued in this state, the support plate 32 will receive heat from the plasma. As a result, the support plate 32 and the base material 311p may be deformed. For example, the support plate 32 and the base material 311p may warp, or the support plate 32 and the base material 311p may partially bend. Hereinafter, deformation will be explained using warp as an example.

For example, if the support plate 32 shown in FIG. 1 is warped downward in a convex manner as a whole due to the thermal history received from plasma, the support plate 32 is in a state before receiving heat (for example, a straight state in a uniaxial direction). Both ends of the support plate 32 move toward the anti-adhesion plate 60 , and the center portion of the support plate 32 moves toward the substrate 90 . As a result, for example, the magnetic circuit portions 311 disposed near both ends of the support plate 32 are separated from the back surface 202 of the rotary target 20. This state is shown in FIG. 4(a).

As shown in FIG. 4A, when the magnetic circuit section 311 separates from the back surface 202 of the rotary target 20, the magnetic field strength on the sputtering surface 201 decreases, and the amount of sputtered particles emitted from the sputtering surface 201 decreases. Change. This may cause a phenomenon in which the film formation rate is not stable over time.

In order to avoid this phenomenon, in this embodiment, the movement mechanism 331 corrects the variation in distance when the magnetic circuit section 311 moves away from or approaches the back surface 202 of the rotary target 20. By this modification, the distance between the magnetic sensor 51 and the magnetic circuit section 311 is maintained constant during sputtering film formation. In other words, even if the magnetic circuit section 311 moves away from or approaches the back surface 202 of the rotary target 20, the magnetic field strength formed on the sputtering surface 201 by the moving mechanism 331 is adjusted to be the same. The method will be explained below.

For example, during sputtering film formation, power supply to the rotary target 20 is periodically stopped, and the magnetic circuit section 311 is made to face the deposition prevention plate 60 as shown in FIG. 4(b). After the magnetic circuit portion 311 is opposed to the adhesion prevention plate 60, the support plate 32 temporarily maintains the warped state during sputtering film formation. The magnetic sensor 51 measures the magnetic field strength in a state where the magnetic circuit section 311 is opposed to the adhesion prevention plate 60. Here, the control unit 70 stores the relationship between the magnetic field intensity detected by the magnetic sensor 51 and the distance between the magnetic sensor 51 and the magnetic circuit unit 311 facing the magnetic sensor 51. Therefore, the distance between the magnetic sensor 51 and the magnetic circuit section 311 when the support plate 32 is warped can be determined from the magnetic field intensity detected by the magnetic sensor 51.

Thereafter, the distance between the magnetic sensor 51 and the magnetic circuit section 311 is returned to the distance between the magnetic sensor 51 and the magnetic circuit section 311 before the support plate 32 warps by the slide mechanism 331r of the moving mechanism 331. . This state is shown in FIG. 5(a).

Next, as shown in FIG. 5(b), the rotation angle θ of the magnetic circuit section 311 is set to the same rotation angle θ as in the state shown in FIG. 3(b). Then, power is applied to the rotary target 20 and sputtering film formation is started. At this time, since the magnetic field strength on the sputtering surface 201 is about the same as that shown in FIG. 3(b), the amount of sputtered particles emitted from the sputtering surface 201 is as shown in FIG. 3(b). The state will be the same as that of the previous state. Thereby, even if sputtering film formation is performed for a long time, the film formation rate of sputtering film formation is stabilized.

Note that when sputtering film formation is performed for a long time, not only the support plate 32 may warp, but also erosion may be formed in the target material 21 of the rotary target 20. In this case, the thickness of the target material 21 is calculated by the distance sensor 41 using the method described above. If the thickness of the target material 21 is calculated as (T ₀ - t (mm)) by this measurement, then the sputtering surface 201 will be on the side of the magnetic circuit section 311 by t (mm) of the decrease in the thickness of the rotary target 20. It can be judged that it is close to . In other words, on the sputtering surface 201, the magnetic field leaking from the magnetic circuit section 311 to the sputtering surface 201 becomes stronger, and even if the magnetic field intensity detected by the magnetic sensor 51 remains unchanged, the magnetic field strength on the sputtering surface 201 increases. becomes stronger by the amount of decrease t (mm).

Therefore, if the sputtering surface 201 is dug by t (mm) due to erosion, by separating the magnetic circuit section 311 from the magnetic sensor 51 (or rotary target 20) by t (mm), the sputtering surface 201 is The strength of the magnetic field to be formed can be set to the same level as the state before erosion is formed.

In this way, the control unit 70 of the vacuum processing apparatus 1 uses a distance sensor in addition to the magnetic sensor to adjust the magnetic field intensity formed on the sputtering surface 201 from any of the plurality of magnetic circuit units 311 to 315 to a target value. The distance between any one of the plurality of magnetic sensors 51 to 55 and the magnetic circuit portion facing any one of the plurality of magnetic sensors 51 to 55 is adjusted so that the distance between the plurality of magnetic sensors 51 to 55 and the magnetic circuit section facing the plurality of magnetic sensors 51 to 55 is adjusted. For example, the control section 70 uses a magnetic sensor and a distance sensor to control one of the plurality of magnetic circuit sections 311 to 315 so that the intensity of the magnetic field formed on the sputtering surface 201 reaches a target value. The distance between the magnetic sensor and the magnetic circuit portion facing the magnetic sensor is adjusted.

As a result of sputtering film formation over a long period of time, even if the support plate 32 warps due to thermal history or erosion is formed in the target material 21, the strength of the magnetic field formed on the sputtering surface 201 will be lower than that of the support plate 32. It can be set to the same level as the state before the target material 32 is warped due to thermal history or the state before erosion is formed in the target material 21. As a result, a stable film formation rate can be obtained even if sputtering film formation is performed for a long time, and variations in the thickness of the sputtered film formed on the substrate 90 are less likely to occur. That is, the yield of sputtering film formation is improved.

Next, an example of a procedure for operating the magnetic circuit sections 311 to 315 will be described. This procedure is automatically performed by the control unit 70. FIG. 6 shows a schematic cross-sectional view showing the definition of the distance between members. In FIG. 6, the magnetic circuit section 311 is shown among the magnetic circuit sections 311 to 315. The definitions shown in FIG. 6 also apply to the magnetic circuit sections 312-315.

For example, the distance between the magnetic circuit section 311 and the central axis 20c is defined by the distance L (mm) between the tip of the magnet 311a of the magnetic circuit section 311 and the central axis 20c. The distance between the magnetic sensor 51 and the magnetic circuit section 311 is defined by the distance M (mm) between the magnetic sensor 51 and the tip of the magnet 311a of the magnetic circuit section 311. The distance between the target member 21 and the magnetic circuit section 311 is defined by the distance N (mm) between the sputtering surface 201 of the target member 21 and the tip of the magnet 311a of the magnetic circuit section 311. The thickness of the target material 21 is defined by the thickness T between the sputtering surface 201 and the back surface 202 of the target material 21. The thickness T corresponds to (T ₀ -t (mm)) described above. Moreover, the distance L+distance M corresponds to the distance between the magnetic sensor 51 and the central axis 20c, and thus becomes a fixed value.

(Operation 1)

In the table, a set of distance sensor 41 and magnetic sensor 51, a set of distance sensor 42 and magnetic sensor 52, a set of distance sensor 43 and magnetic sensor 53, a set of distance sensor 44 and magnetic sensor 54, and a set of distance sensor 45 are shown. and the magnetic sensor 55 (see FIG. 1), the measured values of each sensor, the initial setting values between the members at the positions of each set, and the calculated values of the distances between the members at the positions of each set are shown. There is. Note that the distance and thickness between the members in the initial state (before the start of sputtering film formation) have been measured in advance.

For example, how the magnetic circuit section 311 operates based on detection by the distance sensor 41 and the magnetic sensor 51 will be explained below.

For example, the distance L (mm) between the magnetic circuit section 311 and the central axis 20c is set to 48.5 (mm) as the initial setting value _L0 (step 1a).

Next, the distance M (mm) between the magnetic sensor 51 and the magnetic circuit section 311 is set to _59.0 (mm) as an initial setting value M0 (step 2a).

The target magnetic field strength at the position of the magnetic sensor 51 at this time is set to 38 (Gauss) as an initial setting value _B0 (step 3a). In other words, when the distance L (mm) and the distance M (mm) are set to the above values as initial values, the magnetic circuit section 311 whose magnetic field strength is 38 (Gauss) at the position of the magnetic sensor 51 is used. It will be done.

Next, the magnetic field strength is measured by the magnetic sensor 51 (step 4a). The measured value B here is naturally 38 (Gauss).

Next, a calculated value M1 is calculated as the distance M (mm) between the magnetic sensor 51 and the magnetic circuit section 311 from the measured value of the magnetic field strength detected by the magnetic sensor ₅₁ (step 5a). For example, from the magnetic field strength of 38 (Gauss), the calculated value M ₁ is calculated to be 59.0 (mm). This is calculated from the relational expression (1) between the magnetic field strength detected by the magnetic sensor 51 and the distance between the magnetic sensor 51 and the magnetic circuit section 311, which is stored in the control section 70.

Next, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is calculated, taking into account the decrease in magnetic field strength due to warpage of the support plate 32, etc. (step 6a). Here, in step 5a, the calculated value _M1 matches the initial setting value _M0 , so it can be determined that the support plate 32 is not warped but straight. Therefore, there is no need to change the distance L, and the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is 0.0 (mm).

On the other hand, in this embodiment, in addition to fluctuations in magnetic field strength, reduction in the target material 21 is also taken into consideration. For example, the initial thickness (mm) of the target material 21 is set (step 7a). The initial setting value (T ₀ ) of the thickness is, for example, 20.0 (mm).

Next, an initial setting value (N ₀ ) is set as the distance N (mm) between the target material 21 and the magnetic circuit section 311 (step 8a). The initial setting value N ₀ corresponds to the value obtained by subtracting the distance between the distance sensor 41 and the sputtering surface 201 from the initial setting value M ₀ . The initial setting value N ₀ is 39.0 (mm).

Next, the distance sensor 41 measures the thickness T (mm) of the target material 21 (step 9a). The measured value T ₁ of the thickness of the target material 21 remains at the initial setting value T ₀ and becomes 20.0 (mm).

Next, as the distance N (mm) between the target material 21 and the magnetic circuit section 311, the calculated value of the distance between the target material 21 and the magnetic circuit section ₃₁₁ is calculated from the measured value T1 of the thickness of the target material 21. N ₁ is calculated (step 10a). Here, since the measured value T ₁ of the thickness of the target material 21 remains the initial setting value T ₀ , the calculated value N ₁ is 39.0 (mm).

Next, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is calculated, taking into account the reduction in the thickness of the target material (step 11a). Here, in step 9a, since the measured value _T1 of the target material 21 coincides with the initial setting value _T0 , there is no need to change the distance N (mm) between the target material 21 and the magnetic circuit part 311, and therefore , there is no need to change the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c. Therefore, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is 0.0 (mm).

Next, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is calculated, taking into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21 (step 12a). Here, the change amount (mm) of the distance L between the magnetic circuit section 311 and the central axis 20c in consideration of the decrease in magnetic field strength, and the change amount (mm) between the magnetic circuit section 311 and the central axis in consideration of the decrease in the thickness of the target material. Since the amount of change (mm) in the distance L between the magnetic circuit section 311 and the center axis 20c is 0.0 (mm), the magnetic circuit section 311 and the central axis 20c are adjusted in consideration of a decrease in the magnetic field strength and a decrease in the thickness of the target material 21. The amount of change (mm) in the distance L between the two is 0.0 (mm).

Next, how the magnetic circuit unit 312 operates based on detection by the distance sensor 42 and the magnetic sensor 52 will be described below.

For example, the distance L (mm) between the magnetic circuit section 312 and the central axis 20c is set to 47.5 (mm) as the initial setting value _L0 (step 1a).

Next, the distance M (mm) between the magnetic sensor 52 and the magnetic circuit section 312 is set to 60.0 (mm) as an initial setting value _M0 (step 2a).

The target magnetic field strength at the position of the magnetic sensor 52 at this time is set to 35 (Gauss) as an initial setting value _B0 (step 3a).

Next, the magnetic field strength is measured by the magnetic sensor 52 (step 4a). The measured value B here is naturally 35 (Gauss).

Next, from the measured value of the magnetic field strength detected by the magnetic sensor 52, a calculated value _M1 of 60.0 (mm) is calculated as the distance M (mm) between the magnetic sensor 52 and the magnetic circuit section 312. Ru.

Next, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is calculated, taking into account the decrease in magnetic field strength due to warpage of the support plate 32, etc. (step 6a). Here, in step 5a, the calculated value _M1 matches the initial setting value _M0 , so it can be determined that the support plate 32 is not warped but straight. Therefore, there is no need to change the distance L, and the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is 0.0 (mm).

Next, the initial thickness (mm) of the target material 21 is set (step 7a). The initial setting value (T ₀ ) of the thickness is, for example, 20.0 (mm).

Next, an initial setting value (N ₀ ) is set as the distance N (mm) between the target material 21 and the magnetic circuit section 312 (step 8a). The initial setting value N ₀ is 40.0 (mm).

Next, the distance sensor 42 measures the thickness T (mm) of the target material 21 (step 9a). The measured value T ₁ of the thickness of the target material 21 remains at the initial setting value T ₀ and becomes 20.0 (mm).

Next, as the distance N (mm) between the target material 21 and the magnetic circuit section 312, the calculated value of the distance between the target material 21 and the magnetic circuit section ₃₁₂ is calculated from the measured value T1 of the thickness of the target material 21. N ₁ is calculated (step 10a). Here, since the measured value T ₁ of the thickness of the target material 21 remains the initial setting value T ₀ , the calculated value N ₁ is 40.0 (mm).

Next, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is calculated, taking into account the reduction in the thickness of the target material (step 11a). Here, in step 9a, since the measured value _T1 of the target material 21 coincides with the initial setting value _T0 , there is no need to change the distance N (mm) between the target material 21 and the magnetic circuit section 312, and therefore , there is no need to change the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c. Therefore, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is 0.0 (mm).

Next, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is calculated, taking into account the decrease in the magnetic field strength and the decrease in the thickness of the target material 21 (step 12a). Here, the change amount (mm) of the distance L between the magnetic circuit section 312 and the central axis 20c in consideration of the decrease in magnetic field strength, and the change amount (mm) between the magnetic circuit section 312 and the central axis in consideration of the decrease in the thickness of the target material. Since the amount of change (mm) in the distance L between the magnetic circuit section 312 and the center axis 20c is both 0.0 (mm), the magnetic circuit section 312 and the central axis 20c are adjusted in consideration of a decrease in magnetic field strength and a decrease in the thickness of the target material 21. The amount of change (mm) in the distance L between the two is 0.0 (mm).

In this way, if the support plate 32 is not warped due to thermal history and the target material 21 is not reduced, sputtering can be performed without changing the distance between the magnetic circuit section and the central axis from the initial state. Execute film deposition.

(Operation 2)

Next, Table 2 shows how the magnetic circuit section 311 operates based on detection by the distance sensor 41 and the magnetic sensor 51 when the support plate 32 is warped due to thermal history after starting sputtering film formation. Explain using.

First, from step 1b to step 3b, the same processing as from step 1a to step 3a is performed.

Next, the magnetic field strength is measured by the magnetic sensor 51 (step 4b). Here, it is assumed that the measured value B is not the initial value of 38 (Gauss) but 20 (Gauss).

Next, from the measured value of the magnetic field strength detected by the magnetic sensor 51, a calculated value _M1 is calculated from relational expression (1) as the distance M (mm) between the magnetic sensor 51 and the magnetic circuit section 311 ( Step 5b). For example, from the magnetic field strength of 20 (Gauss), the calculated value M ₁ is calculated to be 67.1 (mm).

Next, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is calculated, taking into account the decrease in magnetic field strength due to warpage of the support plate 32, etc. (step 6b). Here, since the calculated value _M1 does not match the initial setting value _M0 , it can be determined that the support plate 32 is warped. Therefore, the amount of change in the distance L is 8.1 (mm), which is the difference between the calculated value _M1 and the initial setting value _M0 . That is, even if the distance L between the magnetic circuit section 311 and the central axis 20c becomes farther than the initial state, by returning the distance of 8.1 (mm) from the central axis 20c in the direction toward the rotary target 20, The strength of the magnetic field formed on the sputtering surface 201 by the magnetic circuit section 311 becomes approximately the same as that in the initial state.

Next, the reduction in target material 21 is taken into consideration. Here, it is assumed that the target material 21 does not decrease, so the processes from step 7b to step 11b are the same as the processes from step 7a to step 11a.

Next, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is calculated, taking into account the decrease in the magnetic field strength and the thickness of the target material 21 (step 12b). Here, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is 8.1 (mm), taking into account the reduction in the magnetic field strength, and the reduction in the thickness of the target material. Since the amount of change (mm) in the distance L between the magnetic circuit part 311 and the central axis 20c is 0.0 (mm), the magnetic circuit part 311 takes into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21. The amount of change (mm) in the distance L between and the central axis 20c is 8.1 (mm).

Next, how the magnetic circuit unit 312 operates based on detection by the distance sensor 42 and the magnetic sensor 52 will be described below.

First, from step 1b to step 3b, the same processing as from step 1a to step 3a is performed.

Next, the magnetic field strength is measured by the magnetic sensor 52 (step 4b). Here, assume that the measured value B is not the initial value of 35 (Gauss) but 20 (Gauss).

Next, from the measured value of the magnetic field strength detected by the magnetic sensor 52, a calculated value _M1 is calculated from relational expression (1) as the distance M (mm) between the magnetic sensor 52 and the magnetic circuit section 312 ( Step 5b). For example, from the magnetic field strength of 20 (Gauss), the calculated value M ₁ is calculated to be 67.1 (mm).

Next, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is calculated, taking into account the decrease in magnetic field strength due to warping of the support plate 32, etc. (step 6b). The amount of change in the distance L is 7.1 (mm), which is the difference between the calculated value _M1 and the initial setting value _M0 . That is, by returning a distance of 7.1 (mm) from the central axis 20c in the direction toward the rotary target 20, the magnetic field intensity formed on the sputtering surface 201 by the magnetic circuit section 312 becomes comparable to the initial state.

Next, the reduction in target material 21 is taken into consideration. Here, it is assumed that the target material 21 does not decrease, so the processes from step 7b to step 11b are the same as the processes from step 7a to step 11a.

Next, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is calculated, taking into account the decrease in magnetic field strength and the thickness of the target material 21 (step 12b). Here, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is 8.1 (mm), taking into account the reduction in the magnetic field strength, and the reduction in the thickness of the target material. Since the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is 0.0 (mm), the magnetic circuit section 312 takes into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21. The amount of change (mm) in the distance L between the center axis 20c and the central axis 20c is 7.1 (mm).

In this way, when the support plate 32 is warped due to thermal history, the distance between the magnetic circuit section and the central axis is returned from the initial state by a predetermined distance in the direction from the central axis 20c toward the rotary target 20, and the sputtering film is formed. Execute.

(Operation 3)

Next, after starting sputtering film formation, if the support plate 32 is warped due to thermal history and the thickness of the target material 21 is reduced, for example, the magnetic circuit section 311 is detected by the distance sensor 41 and the magnetic sensor 51. How it operates will be explained using Table 3.

First, from step 1c to step 6c, the same processing as from step 1b to step 6b is performed. That is, a process is performed in which the distance L between the magnetic circuit section 311 and the central axis 20c is returned by 8.1 (mm) in the direction from the central axis 20c toward the rotary target 20.

Next, the reduction in target material 21 is taken into consideration. First, steps 7c to 8c are the same processes as steps 7a to 8a.

Next, the distance sensor 41 measures the thickness T (mm) of the target material 21 (step 9c). Here, the measured value _T1 of the thickness of the target material 21 is 18.0 (mm). That is, it is assumed that the thickness of the target material 21 is reduced by 2.0 (mm) due to sputtering film formation.

Next, as the distance N (mm) between the target material 21 and the magnetic circuit section 311, the calculated value of the distance between the target material 21 and the magnetic circuit section ₃₁₁ is calculated from the measured value T1 of the thickness of the target material 21. N ₁ is calculated (step 10c). Here, the calculated value _N1 is 37.0 (mm).

Next, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is calculated, taking into account the reduction in the thickness of the target material (step 11c). Here, in step 9c, the measured value _T1 of the target material 21 is decreased by 2.0 (mm) from the initial setting value _T0 . Therefore, since the sputtering surface 201 has moved closer to the magnetic circuit section 311 by this 2.0 (mm), it is necessary to change the distance N (mm) between the target material 21 and the magnetic circuit section 311. Therefore, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is -2.0 (mm). That is, a process is performed in which the distance L between the magnetic circuit section 311 and the central axis 20c is returned by 2.0 (mm) in the direction opposite to the direction from the central axis 20c toward the rotary target 20.

Next, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is calculated, taking into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21 (step 12a). Here, the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is 8.1 (mm), taking into account the reduction in the magnetic field strength, and the reduction in the thickness of the target material. Since the amount of change (mm) in the distance L between the magnetic circuit section 311 and the central axis 20c is -2.0 (mm), the magnetic circuit takes into account the decrease in magnetic field strength and the decrease in the thickness of the target material 21. The amount of change (mm) in the distance L between the portion 311 and the central axis 20c is 6.1 (mm).

Next, how the magnetic circuit unit 312 operates based on detection by the distance sensor 42 and the magnetic sensor 52 will be described below.

First, from step 1c to step 6c, the same processing as from step 1b to step 6b is performed.

Next, the reduction in target material 21 is taken into consideration. First, steps 7c to 8c are the same processes as steps 7a to 8a.

Next, the distance sensor 42 measures the thickness T (mm) of the target material 21 (step 9c). Here, the measured value _T1 of the thickness of the target material 21 is 19.0 (mm). That is, it is assumed that the thickness of the target material 21 is reduced by 1.0 (mm) due to sputtering film formation.

Next, as the distance N (mm) between the target material 21 and the magnetic circuit section 312, the calculated value of the distance between the target material 21 and the magnetic circuit section ₃₁₂ is calculated from the measured value T1 of the thickness of the target material 21. N ₁ is calculated (step 10c). Here, the calculated value _N1 is 39.0 (mm).

Next, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is calculated, taking into account the reduction in the thickness of the target material (step 11c). Here, in step 9c, the measured value _T1 of the target material 21 is decreased by 1.0 (mm) from the initial setting value _T0 . Therefore, since the sputtering surface 201 has moved closer to the magnetic circuit section 312 by this 1.0 (mm), it is necessary to change the distance N (mm) between the target material 21 and the magnetic circuit section 312. Therefore, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is -1.0 (mm). That is, a process is performed in which the distance L between the magnetic circuit section 312 and the central axis 20c is returned by 1.0 (mm) in the direction opposite to the direction from the central axis 20c toward the rotary target 20.

Next, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is calculated, taking into account the decrease in the magnetic field strength and the decrease in the thickness of the target material 21 (step 12a). Here, the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is 7.1 (mm), taking into account the reduction in the magnetic field strength, and the reduction in the thickness of the target material. Since the amount of change (mm) in the distance L between the magnetic circuit section 312 and the central axis 20c is -1.0 (mm), the magnetic circuit is designed in consideration of a decrease in magnetic field strength and a decrease in the thickness of the target material 21. The amount of change (mm) in the distance L between the portion 312 and the central axis 20c is 6.1 (mm).

Note that the detection by the distance sensor 43 and the magnetic sensor 53 determines how the magnetic circuit unit 313 operates, or the detection by the distance sensor 44 and the magnetic sensor 54 determines how the magnetic circuit unit 314 operates. This is carried out in the same manner as the procedure for operating the magnetic circuit section 312 by detection by the distance sensor 42 and the magnetic sensor 52. Furthermore, how the magnetic circuit unit 315 is operated based on the detection by the distance sensor 45 and the magnetic sensor 55 is the same as the procedure for operating the magnetic circuit unit 311 based on the detection by the distance sensor 41 and the magnetic sensor 51. conduct.

Further, the magnetic circuit section 311 corresponding to the position of the distance sensor 41 and the magnetic sensor 51 and the magnetic circuit section 315 corresponding to the position of the distance sensor 45 and the magnetic sensor 55 are rotary compared to other magnetic circuit sections. It is brought closer to target 20. This is because magnetic circuit sections are not arranged on both sides of each of the magnetic circuit sections 311 and 315. By bringing the magnetic circuit section 311 and the magnetic circuit section 315 closer to the rotary target 20 than other magnetic circuit sections, the magnetic field strength formed on the sputtering surface 201 becomes more uniform. This makes the film thickness distribution in the uniaxial direction of the rotary target 20 more uniform.

FIG. 7 is a flowchart summarizing the operation procedure of the magnetic circuit section listed in Tables 1 to 3.

First, the magnetic field strength is measured by one of the magnetic sensors 51 to 55 (S100). Next, it is determined whether the magnetic field strength measured by any of the magnetic sensors 51 to 55 needs to be changed (S200). Here, if it is determined that it is necessary, the amount of change in the distance between any one of the magnetic circuit sections 311 to 315 and the central axis 20c is calculated, taking into account the variation in magnetic field strength (S300). Note that if it is determined in S200 that it is unnecessary, the process advances to S400.

Next, the thickness of the target material 21 is measured by one of the distance sensors 41 to 45 (S400). Next, it is determined whether the distance between the target material 21 and any of the magnetic circuit sections 311 to 315 needs to be changed (S500). Here, if it is determined that it is necessary, the amount of change in the distance between any one of the magnetic circuit parts 311 to 315 and the central axis 20c is calculated, taking into account the variation in the thickness of the target material 21 (S600). Note that if it is determined in S500 that it is unnecessary, the distance between any one of the magnetic circuit sections 311 to 315 and the central axis 20c is not changed and the process ends.

Next, the distance between any one of the magnetic circuit parts 311 to 315 and the central axis 20c is changed based on the respective change amounts taking into account the variation in magnetic field strength and the variation in target material thickness (S700), and the process ends. .

For example, if sputtering film formation is started and the film thickness distribution in the uniaxial direction (X-axis direction) of the sputtered film formed on the substrate 90 temporarily drops to 6.8%, as shown in FIG. It has been found that by controlling the magnetic circuit section, when the target value of the film thickness distribution in the uniaxial direction is set to 5% or less, it can be recovered to, for example, 4.6% or less. Note that the film thickness distribution is defined as ((maximum film thickness−minimum film thickness)/(maximum film thickness+minimum film thickness))×100(%).

FIG. 8 is a schematic cross-sectional view showing another example of the vacuum processing apparatus of this embodiment.

In the vacuum processing apparatus 2, a plurality of rotary targets 20 are used to perform sputtering film formation (magnetron sputtering) on the substrate 90. The number of multiple rotary targets is changed as appropriate depending on the size of the substrate 90. The plurality of rotary targets 20 are housed in a vacuum chamber 10 that can maintain reduced pressure.

The vacuum chamber 10 is connected to an exhaust mechanism (not shown). A discharge gas such as Ar is supplied to the vacuum chamber 10 from a gas supply mechanism (not shown). The vacuum processing apparatus 2 also includes a rotation mechanism (not shown) that rotates the plurality of rotary targets 20 and the respective magnetic field generation mechanisms 30. The vacuum processing apparatus 2 also controls the operation of the rotary target 20, the magnetic field generation mechanism 30, the sensor group S1 including the distance sensors 41 to 45 and the magnetic sensors 51 to 55, the exhaust mechanism, the gas supply mechanism, and the rotation mechanism. The control unit 70 is equipped with a control unit 70 that performs the following operations. Note that each of the distance sensors 41 to 45 and each of the magnetic sensors 51 to 55 included in the sensor group S1 are arranged in parallel in the direction of the central axis 20c.

The plurality of rotary targets 20 are arranged so that the central axes 20c are parallel to each other and the central axes 20c are parallel to the substrate 90. For example, the plurality of rotary targets 20 are arranged in parallel at equal intervals so that the sputtering surfaces 201 face each other in a direction intersecting the direction of the central axis 20c (uniaxial direction). The direction in which the plurality of rotary targets 20 are arranged in parallel corresponds to the longitudinal direction of the substrate 90. In FIG. 8, this direction is the Y-axis direction. Note that, if necessary, the direction in which the plurality of rotary targets 20 are arranged in parallel may be the lateral direction of the substrate 90.

The potential of the substrate holder 91 is, for example, a floating potential, a ground potential, or the like. The sputtering surface 201 of each of the plurality of rotary targets 20 faces the substrate 90.

Further, in the Y-axis direction, a pair of rotary targets 20 arranged at both ends are arranged so as to protrude from the substrate 90. For example, the plurality of rotary targets 20 are arranged such that at least a portion of each of the pair of rotary targets 20 and the substrate 90 overlap in the Z-axis direction (direction perpendicular to the X-axis direction and the Y-axis direction).

In the Y-axis direction, the pitches of the plurality of rotary targets 20 are set to be substantially equal. Further, the relative distance between the plurality of rotary targets 20 and the substrate 90 during sputtering film formation may be a fixed distance, or may be varied in the Y-axis direction.

Discharge power is applied to each of the plurality of rotary targets 20, and the magnetic circuit sections 311 to 315 of each of the plurality of rotary targets 20 are rotated around the central axis 20c, and the rotation angle θ is fixed at a predetermined rotation angle. After that, sputtering film formation is performed on the substrate 90.

The same electric power is applied to each of the plurality of rotary targets 20, for example, in order to make the consumption of each rotary target approximately equal. The input power may be DC power or AC power in the RF band, VHF band, etc. Further, each of the plurality of rotary targets 20 rotates clockwise or counterclockwise.

Sputtering film formation is performed at least once when the rotation angle θ of the magnetic circuit parts 311 to 315 is on the positive side (for example, +20 to +40 degrees), and once when the rotation angle θ of the magnetic circuit parts 311 to 315 is on the negative side (for example, -20 degrees). -40 degrees) at least once. By performing such processing, damage to the sputtered film is suppressed, and film thickness unevenness in the Y-axis direction is compensated for by multiple sputtering films, rather than one-time sputtering film formation. The film thickness distribution in the axial direction becomes better.

Furthermore, in this embodiment, the film thickness distribution in the X-axis direction (uniaxial direction) is improved by the above-described method. As a result, in this embodiment, the film thickness distribution over the entire area of the substrate 90 becomes better.

Moreover, in this embodiment, in addition to the vacuum processing apparatuses 1 and 2, a processing method using the vacuum processing apparatuses 1 and 2 is provided. For example, in the vacuum processing method, a rotary target 20, a magnetic field generation mechanism 30, a substrate holder 91, an adhesion prevention plate 60, a plurality of distance sensors 41 to 45, and a plurality of magnetic sensors 51 to 55 are prepared. , sputtered particles are deposited on substrate 90 .

Here, the relationship between the distance between one of the plurality of distance sensors 41 to 45 and the sputtering surface 201 and the amount of decrease in the thickness of the rotary target 20 facing one of the plurality of distance sensors 41 to 45 is obtained in advance. be done. Further, between the magnetic field intensity detected by any one of the plurality of magnetic sensors 51 to 55 and the magnetic circuit portions 311 to 315, which each of the plurality of magnetic sensors 51 to 55 faces, The relationship between the distance and the distance is obtained in advance.

Next, one of the plurality of magnetic sensors 51 to 55 is connected to one of the plurality of magnetic sensors 51 to 55 so that the magnetic field intensity formed on the sputtering surface 201 from any of the plurality of magnetic circuit parts 311 to 315 becomes the target value. The distance between the opposing magnetic circuit sections 311 to 315 is adjusted.

Alternatively, sputtered particles may be deposited on the substrate 90 by arranging a plurality of rotary targets 20 in parallel in a direction intersecting the uniaxial direction.

Although the embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to the above-described embodiments and can be modified in various ways. Each embodiment is not necessarily an independent form, and can be combined to the extent technically possible.

1, 2... Vacuum processing device 10... Vacuum chamber 20... Rotary target 20c... Central axis 21... Target material 22... Backing tube 30... Magnetic field generation mechanism 32... Support plate 41, 42, 43, 44, 45... Distance sensor 51, 52, 53, 54, 55...Magnetic sensor 60...Adhesion prevention plate 70...Control unit 90...Substrate 91...Substrate holder 201...Sputtering surface 202...Back surface 311a, 311b, 311c...Magnet 311p...Base material 331r...Slide mechanism 311, 312, 313, 314, 315...Magnetic circuit section 331, 332, 333, 334, 335...Movement mechanism

Claims (6)

A cylinder that includes a first main surface that emits sputtered particles and a second main surface opposite to the first main surface, has a central axis extending in a uniaxial direction, and rotates around the central axis. A rotary target shaped like
a plurality of magnetic circuit sections facing the second principal surface, arranged in parallel in the uniaxial direction, and rotatable around the central axis; and a distance between each of the plurality of magnetic circuit sections and the rotary target. a magnetic field generating mechanism having a moving mechanism for changing the
a substrate holder that faces the first main surface and is capable of supporting a substrate on which the sputtered particles are deposited;
an adhesion prevention plate disposed on the opposite side of the rotary target from the substrate holder;
A plurality of first main surfaces are provided on the adhesion prevention plate so as to face the first main surface of the rotary target, and are configured to measure the amount of decrease in the thickness of the rotary target after the sputtering particles are released from the first main surface. 1 sensor and
The adhesion prevention plate is provided so as to face the first main surface of the rotary target, and when any of the plurality of magnetic circuit parts faces the adhesion prevention plate, any one of the plurality of magnetic circuit parts and a plurality of second sensors that measure magnetic force leaking through the first main surface of the rotary target. The vacuum processing apparatus according to claim 1,
further comprising a control unit that controls the operation of each of the rotary target, the magnetic field generation mechanism, the first sensor, and the second sensor,
The control section includes:
a relationship between the distance between any one of the plurality of first sensors and the first main surface and the amount of decrease in the thickness of the rotary target that any one of the plurality of first sensors faces;
A relationship between a magnetic field intensity detected by any one of the plurality of second sensors and a distance between one of the plurality of second sensors and the magnetic circuit section is stored,
The control unit controls one of the plurality of second sensors and one of the plurality of second sensors so that the magnetic field intensity formed on the first main surface from any one of the plurality of magnetic circuit units becomes a target value. A vacuum processing apparatus in which the distance between one of the opposed magnetic circuit parts is adjusted. The vacuum processing apparatus according to claim 1 or 2,
A vacuum processing apparatus in which a plurality of the rotary targets are arranged in parallel in a direction intersecting the uniaxial direction. A cylinder that includes a first main surface that emits sputtered particles and a second main surface opposite to the first main surface, has a central axis extending in a uniaxial direction, and rotates around the central axis. A rotary target shaped like
a plurality of magnetic circuit sections facing the second principal surface, arranged in parallel in the uniaxial direction, and rotatable around the central axis; and a distance between each of the plurality of magnetic circuit sections and the rotary target. a magnetic field generating mechanism having a moving mechanism for changing the
a substrate holder that faces the first main surface and is capable of supporting a substrate on which the sputtered particles are deposited;
an adhesion prevention plate disposed on the opposite side of the rotary target from the substrate holder;
A plurality of first main surfaces are provided on the adhesion prevention plate so as to face the first main surface of the rotary target, and are configured to measure the amount of decrease in the thickness of the rotary target after the sputtering particles are released from the first main surface. 1 sensor and
The adhesion prevention plate is provided so as to face the first main surface of the rotary target, and when any of the plurality of magnetic circuit parts faces the adhesion prevention plate, any one of the plurality of magnetic circuit parts and a plurality of second sensors that measure magnetic force leaking through the first main surface of the rotary target, and depositing the sputtered particles on the substrate. The vacuum processing method according to claim 4,
a relationship between the distance between any one of the plurality of first sensors and the first main surface and the amount of decrease in the thickness of the rotary target that any one of the plurality of first sensors faces;
The relationship between the magnetic field strength detected by any one of the plurality of second sensors and the distance between one of the plurality of second sensors and the magnetic circuit section facing each of the plurality of second sensors. Acquired,
Any one of the plurality of second sensors faces one of the plurality of second sensors so that the magnetic field intensity formed on the first main surface from any one of the plurality of magnetic circuit parts becomes a target value. A vacuum processing method, comprising adjusting the distance between the magnetic circuit section and the magnetic circuit section. The vacuum processing method according to claim 4 or 5,
A vacuum processing method, wherein a plurality of the rotary targets are arranged in parallel in a direction intersecting the uniaxial direction, and the sputtered particles are deposited on the substrate.