JP2023142449A - Substrate processing apparatus - Google Patents

Abstract

To provide a substrate processing apparatus in which a substrate can be rotated while a processing liquid is stored on the substrate.SOLUTION: A substrate processing apparatus 10 for processing a substrate using a processing liquid includes a substrate holding portion 11 that holds a substrate W, substrate rotation means 12 that rotates the substrate holding portion, a processing liquid supply portion 13 that discharges the processing liquid onto the substrate, a frame member 20 whose inner enclosing shape is smaller than the outer shape of the substrate in a plan view, and which can be placed on the outer periphery of the substrate to form a reservoir for the processing liquid together with the substrate, and frame member holding means 30 capable of holding or releasing the frame member and movable vertically relative to the substrate holding portion.SELECTED DRAWING: Figure 1

Description

The present invention relates to an apparatus for processing a substrate such as a semiconductor wafer using a processing liquid.

In single-wafer processing in the semiconductor industry, various treatments such as etching and cleaning are performed by supplying a processing liquid to the surface of a semiconductor wafer while holding it approximately horizontally and rotating it. The processing liquid supplied onto the wafer moves toward the outer edge of the wafer due to centrifugal force and is discharged from the outer edge of the wafer, and a processing liquid film is formed on the wafer surface with a thickness such that the amount of supply and the amount of discharge are balanced. As described above, in the conventional single-wafer processing method, the substrate is processed while the processing liquid is being poured over the substrate, so it is necessary to use a large amount of the processing liquid.

On the other hand, Patent Document 1 discloses that a ring-shaped chemical stopper with the diameter of the semiconductor wafer is brought into close contact with the wafer, the chemical is stored on the wafer, and the temperature of the chemical is raised using a microwave generator or a heating lamp. A semiconductor wafer cleaning apparatus is described. Further, Patent Document 2 discloses a method in which a liquid pool forming member is provided, the bottom of the liquid pool is formed on the surface of the substrate, and the surface of the substrate is treated with the liquid stored in the liquid pool. Disclosed.

Japanese Patent Application Publication No. 4-357836 Japanese Patent Application Publication No. 9-162153

According to the apparatus or method described in Patent Document 1 or 2, since the processing liquid is stored on the substrate and the substrate is processed, the amount of processing liquid used can be reduced. However, in the apparatuses or methods described in Patent Documents 1 and 2, the substrate cannot be rotated at the stage of storing the processing liquid on the substrate, so there is a risk that bubbles may be drawn into the processing liquid, causing the processing liquid to spread. is not desirable. Further, if there is unevenness in the wafer surface condition, the processing liquid may not spread well in that area. Furthermore, since the substrate cannot be rotated with the processing liquid stored on the substrate, there is a problem that the reaction rate during substrate processing is low.

The present invention has been made in consideration of the above, and provides a substrate processing apparatus that processes a substrate by storing a processing liquid on the substrate, and in which the substrate can be rotated while the processing liquid is stored. That is the issue.

A substrate processing apparatus of the present invention is a substrate processing apparatus for processing a substrate using a processing liquid, and includes a substrate holding part for holding the substrate, a substrate rotation means for rotating the substrate holding part, and a substrate processing apparatus for processing a substrate using a processing liquid. a processing liquid supply unit that discharges the processing liquid onto the top; and a processing liquid supply unit that has an inner enclosing shape smaller than the outer shape of the substrate in plan view, and is placed on the outer periphery of the substrate to store the processing liquid together with the substrate. It has a frame member that can be formed, and a frame member holding means that can hold or open the frame member and is movable vertically relative to the substrate holding part.

Another substrate processing apparatus of the present invention is a substrate processing apparatus for processing a disk-shaped substrate using a processing liquid, the apparatus comprising: a substrate holder for holding the substrate; and a substrate for rotating the substrate holder. a rotating means, a processing liquid supply section that discharges the processing liquid onto the substrate, a frame member that forms a storage section for the processing liquid together with the substrate, and a frame that supports the frame member and rotates the frame member. If the inner diameter of the frame member is smaller than the diameter of the substrate, the inner diameter of the frame member is smaller than that of the substrate in a range that includes at least a position where the lower surface of the frame member is close to the upper surface of the substrate. If the frame member is larger than the diameter, the inner wall surface of the frame member includes a frame member supporting means that is movable in the vertical direction relative to the substrate holding portion in a range that includes at least a position close to the outer peripheral end surface of the substrate.

According to the substrate processing apparatus of the present invention, the amount of processing liquid used can be reduced by storing the processing liquid on the substrate using the frame member and processing the substrate. Further, the substrate can be rotated with the processing liquid stored therein.

FIG. 1 is a diagram showing the configuration of a substrate processing apparatus according to a first embodiment. It is a figure which shows the shape of the frame member of 1st Embodiment. A: Plan view, B: XX sectional view of FIG. 2A, C: Enlarged view of the part surrounded by the broken line circle of FIG. 2B. It is a figure showing the composition of frame member holding means of a 1st embodiment. A: Top view, B: Side view. FIG. 3 is a process flow diagram of a method of using the substrate processing apparatus of the first embodiment. A to F: Diagrams for explaining how to use the substrate processing apparatus of the first embodiment. FIG. 3 is a diagram showing the configuration of a substrate processing apparatus according to a second embodiment. It is a figure which shows the shape of the frame member of 2nd Embodiment. A: Plan view, B: XX cross-sectional view of FIG. 2A (when the inner diameter is smaller than the wafer), C: XX cross-sectional view of FIG. 2A (when the inner diameter is larger than the wafer), D: Y-arrow view of FIG. 2C. It is a figure which shows the structure of the frame member support means of 2nd Embodiment. A: A plan view of the inside of the case, B: A side view showing a partial cross section. FIG. 7 is a process flow diagram of a method of using the substrate processing apparatus of the second embodiment. A to F: Diagrams for explaining how to use the substrate processing apparatus of the second embodiment.

A first embodiment of the substrate processing apparatus will be described based on FIGS. 1 to 5.

Referring to FIG. 1, a substrate processing apparatus 10 according to the present embodiment includes a substrate holder 11 that holds a wafer (substrate) W, a substrate rotation means 12 that rotates the substrate holder 11, and a processing liquid that is placed on the wafer W. It has a plurality of nozzles (processing liquid supply section) 13 for discharging liquid, a frame member 20, and a frame member holding means 30.

The substrate holding unit 11 holds the wafer W substantially horizontally by vacuum suctioning the wafer W or by supporting the wafer W at several locations around the periphery with holding pins. It is preferable that the substrate holder not only hold the wafer horizontally, but also be able to hold the wafer at a slightly inclined angle from the horizontal, for example within a range of 10 degrees from the horizontal. The substrate rotation means 12 rotates the substrate holder so that the wafer rotates around the center within its plane. The nozzle 13 discharges the processing liquid onto the wafer. The number of nozzles is not particularly limited.

The type of processing liquid supplied onto the wafer W from the nozzle 13 is not particularly limited. Examples of processing liquids include ammonia/hydrogen peroxide mixtures used in various cleaning treatments, sulfuric acid/hydrogen peroxide mixtures, hydrochloric acid/hydrogen peroxide mixtures, dilute hydrofluoric acid and ozone water, and ozone water used in various etching treatments. Examples include hydrofluoric acid, nitric acid, acetic acid, phosphoric acid, and mixed acids of these acids, pure water used for rinsing, and IPA used for drying. By providing a nozzle for each treatment liquid, a series of treatments using different treatment liquids, such as a cleaning treatment with a chemical solution, a rinsing treatment with pure water, and a drying treatment with IPA, can be performed continuously.

Referring to FIG. 2, frame member 20 is a ring-shaped member. The inner diameter of the frame member is slightly smaller than the diameter of the wafer W. A recess 22 is formed in the lower part of the frame member 20 on the inner wall surface 21 side of the lower surface, and the recess 22 can be fitted to the outer periphery of the wafer W, so that the frame member can be placed on the outer periphery of the wafer. When the frame member is placed on the outer periphery of the wafer, the inner wall surface 21 of the frame member and the upper surface of the wafer W form a reservoir 24 in which processing liquid can be stored. Further, a flange portion 23 is formed on the outer periphery of the frame member, and the frame member 20 can be held by the frame member holding means 30 gripping the flange portion.

The inner diameter of the frame member 20 is preferably d-20 mm or more, more preferably d-6 mm or more, and less than d, where d is the diameter of the wafer W. If the wafer has a notch (orientation flat or notch) for indicating the crystal orientation, the shape of the frame member in plan view is matched to the outer shape of the wafer. If the substrate is rectangular or otherwise non-circular, the shape enclosed inside the frame member is made smaller than the outer shape of the substrate in plan view. In other words, the size of the frame member is such that when the frame member is stacked on the outer periphery of the substrate, the outline of the substrate does not appear inside the frame in plan view. At this time, the area of the outer periphery of the substrate that is hidden by the frame member is preferably within 10 mm from the outer periphery of the substrate, and more preferably within 3 mm.

The frame member 20 is manufactured using a fluororesin such as PFA/PTFE that has chemical resistance, an engineering plastic such as PEEK that has good dimensional accuracy, a glass material such as quartz that has little elution/particles, a crystalline material such as sapphire, etc. be able to. The frame member is preferably made using fluororesin or quartz.

Referring to FIG. 3, the frame member holding means 30 has a vertically standing pivot shaft 31, an arm 32 that can pivot around the pivot shaft 31, and a holding portion 33 provided at the tip of the arm 32. The holding part 33 can hold the frame member 20 and open it. By pivoting around the pivot shaft 31, the arm 32 can reciprocate the frame member between a side standby position (the position indicated by the broken line in FIG. 2A) and a position directly above the substrate holder 11. The arm 32 can move up and down along the rotation axis 31, and can place the frame member 20 on the wafer W or lift it off the wafer. Alternatively, the arm 32 and the pivot shaft 31 may be able to move up and down integrally. Note that since it is sufficient that the frame member holding means 30 and the substrate holding section 11 are relatively movable in the vertical direction, the substrate holding section may be capable of being raised and lowered. The pivot shaft 31 is also movable in the horizontal direction (left and right directions in FIGS. 3A and 3B) so that the distance from the substrate holding part 11 can be changed.

Next, a method of using the substrate processing apparatus of this embodiment will be described with reference to FIG. 5, using RCA cleaning processing of a semiconductor wafer as an example, along the process flow of FIG. 4.

(S1) With the wafer W fixed to the substrate holding part 11 and not rotating, the frame member 20 is set on the wafer W by the frame member holding means 30 (FIG. 5A). Specifically, the holding portion 33 of the frame member holding means 30 holds the frame member 20 at the standby position, the arm 32 is rotated around the pivot shaft 31, the frame member 20 is moved to directly above the wafer W, and the arm 32 is lowered to fit the frame member 20 to the outer periphery of the wafer and place it on the outer periphery of the wafer, and the holding section 33 releases the frame member and raises the arm, thereby completing the setting of the frame member. Whether or not the frame member 20 is correctly placed on the wafer W can be confirmed by, for example, a position sensor.

(S2) A predetermined amount (0.3 L) of SC-1 liquid (ammonia hydrogen peroxide water mixture) at 70° C. is discharged onto the wafer from the nozzle 13a at 0.9 L/min for 20 seconds (S2a, Figure 5B). After stopping the discharge of the SC-1 liquid, the wafer W is rotated at a low speed of about 30 rpm for about 10 seconds to spread the SC-1 liquid evenly throughout the storage section 24. Note that the SC-1 liquid may be discharged while rotating the wafer.

With the supply of the SC-1 liquid stopped, the cleaning process is performed for about 120 seconds with the rotation of the wafer W stopped or while the wafer W is rotated (S2b, FIG. 5C). Preferably, by performing the cleaning process while rotating the wafer at a low speed, the circulation of the treatment liquid can be improved and the reaction rate during the cleaning process can be increased. By storing the SC-1 liquid on the substrate and performing the process, the amount of SC-1 liquid used can be significantly reduced compared to the conventional method of pouring the process liquid over the substrate.

After the cleaning process is completed, the frame member 20 is held by the frame member holding means 30 and lifted by about 50 mm. The wafer W is rotated at 600 rpm to shake off the SC-1 liquid from the outer periphery of the wafer (S2c, FIG. 5D).

(S3) The rotational speed of the wafer W is lowered to 30 rpm, and the frame member 20 is lowered until the distance from the wafer is approximately 1 mm. Pure water (DIW) at 25° C. is discharged onto the wafer from the nozzle 13b at, for example, 1 L/min for 60 seconds (S3a, FIG. 5E). The pure water not only rinses the wafer surface, but also washes away the SC-1 liquid remaining on the frame member surface. The amount of pure water supplied is preferably large enough that the pure water overflows over the upper end of the frame member. This allows the entire surface of the frame member to be evenly washed. By raising the entire frame member 20 to a higher position than the upper surface of the wafer, the entire surface of the frame member can be easily cleaned.

When the rinsing process is completed, the frame member 20 is held by the frame member holding means 30 and lifted by about 50 mm, and the wafer W is rotated at 600 rpm to shake off the pure water from the outer periphery of the wafer (S3b, FIG. 5F).

(S4) Stop the rotation of the wafer W, and set the frame member 20 again in the same manner as in step S1. Note that the same frame member used in the SC-1 cleaning may be used as the frame member 20, but in consideration of contamination of the frame member, it is preferable to use a different frame member.
(S5) SC-2 liquid (hydrochloric acid/hydrogen peroxide mixed solution) is discharged onto the wafer from the nozzle 13a, and thereafter SC-2 cleaning is performed in the same manner as in step S2.
(S6) Perform rinsing treatment in the same manner as step S3.
(S7) After the rinsing process is completed, a drying process is performed to complete the RCA cleaning.

A second embodiment of the substrate processing apparatus will be described based on FIGS. 6 to 10. The substrate processing apparatus of this embodiment is an apparatus for processing a disk-shaped substrate, and unlike the first embodiment in which the frame member is placed on the substrate, the frame member is placed close to the substrate. Process the substrate in the correct condition.

Referring to FIG. 6, the substrate processing apparatus 40 of the present embodiment includes a substrate holding section 11 that holds a wafer (substrate) W, a substrate rotation means 12 that rotates the substrate holding section 11, and a processing liquid on the wafer W. It has a plurality of nozzles (processing liquid supply section) 13 for discharging the liquid, a frame member 50, and a frame member support means 60.

The substrate holder 11 is the same as in the first embodiment. However, if the wafer W has a notch to indicate the crystal orientation, the substrate holder 11 should be a circular vacuum suction table with the same diameter as the wafer, so that no suction holes appear in the notched part of the wafer. use something The substrate rotation means 12 and nozzle 13 are the same as in the first embodiment. Furthermore, the type of treatment liquid is not particularly limited, as in the first embodiment.

Referring to FIG. 7, frame member 50 is a ring-shaped member. The inner diameter of the frame member is approximately the same as the diameter of the wafer W. A flange portion 53 is formed on the outer periphery of the frame member 50, and the frame member is supported by connecting the flange portion to the frame member support means 60.

Referring to FIG. 7B, if the inner diameter of the frame member 50 is smaller than the diameter of the wafer W, the lower surface 52 of the frame member should be brought close to the upper surface of the wafer W, leaving a gap G between the frame member 50 and the upper surface of the wafer W. Accordingly, a reservoir 54 for storing the processing liquid can be formed between the inner wall surface 51 of the frame member and the upper surface of the wafer. The size of the gap G at this time is selected depending on the supply amount and viscosity of the processing liquid and the rotational speed of the wafer, but is preferably 1 mm or less, more preferably 0.1 mm or less. This is because the narrower the gap G, the smaller the amount of processing liquid leaking from the reservoir. On the other hand, as will be described later, the frame member 50 of this embodiment is rotatable independently of the wafer, so when rotating the frame member, the size of the gap G is preferably 1 μm or more. This is to avoid interference with the wafer when the frame member is rotated. Further, the inner diameter of the frame member 50 is preferably d-20 mm or more, more preferably d-6 mm or more, and less than d, where d is the diameter of the wafer W. If the wafer has a notch to indicate the crystal orientation, the substrate holder 11 should be a circular vacuum suction table with the same diameter as the wafer, and no suction holes will appear in the notched part of the wafer. Use. As a result, the top surface of the wafer and the top surface of the table of the substrate holding section constitute the bottom surface of the storage section 54 .

Referring to FIG. 7C, when the inner diameter of the frame member 50 is larger than the diameter of the wafer W, the inner wall surface 51 of the frame member is moved close to the outer circumferential end surface of the wafer, leaving a gap H between the frame member 50 and the outer circumferential edge surface of the wafer. By doing so, a reservoir 54 for storing the processing liquid can be formed between the inner wall surface 51 of the frame member and the upper surface of the wafer. The size of the gap H at this time is preferably 1 mm or less, more preferably 0.1 mm or less, and preferably 1 μm or more for the same reason as in the case of FIG. 7B. The inner diameter of the frame member 50 is the sum of d and twice the gap H, where d is the diameter of the wafer W. Therefore, the preferable range of the inner diameter of the frame member 50 depends on the preferable range of the gap H. Determined. If the wafer has a notch to indicate the crystal orientation, the substrate holder 11 should be a circular vacuum suction table with the same diameter as the wafer, and no suction holes will appear in the notched part of the wafer. Use. As a result, the top surface of the wafer and the top surface of the table of the substrate holding section constitute the bottom surface of the storage section 54 .

Further, referring to FIG. 7D, when the inner diameter of the frame member 50 is larger than the diameter of the wafer W, it is preferable that the frame member is formed with an outflow hole 55 through which the processing liquid flows out from the storage section 54. As will be described later, this is to stabilize the flow of the processing liquid during substrate processing.

Referring to FIG. 8, frame member support means 60 includes two vertically standing columns 61, a case 62, and a support member 65. The case 62 is provided with guide holes on the top and bottom surfaces at two locations corresponding to the two pillars, and is supported by the pillars by inserting the pillars into the guide holes. A hole 63 of approximately the same size as the wafer vertically passes through a portion of the case 62 above the wafer W, and a ball bearing 64 is mounted on the inner wall surface of the hole 63. As the ball bearing 64, a ceramic ball bearing having excellent acid resistance and chemical resistance can be suitably used.

The support member 65 has a substantially cylindrical shape, has an upper portion inscribed in the ball bearing 64, and is suspended from the case. A collar portion 53 of the frame member 50 is connected to the lower end of the support member so that the support member and the frame member 50 are concentric. The nozzle 13 for supplying the processing liquid, wiring for various sensors, and the like can be inserted into the substantially cylindrical interior of the support member 65.

A motor 66 is installed inside the case 62, and the support member can be rotated around its central axis by a belt 67 wrapped around the shaft of the motor and the upper part of the support member. By rotating the support member, the frame member 50 connected to the lower end of the support member rotates. In this embodiment, the motor 66 is a frame member rotating means.

Further, by housing the motor 66 and the belt 67 in the case 62, contamination of the wafer due to dust generated from the belt or the like can be prevented. Preferably, internal air is sucked through an exhaust port 68 provided in the case 62 to create a negative pressure inside the case, thereby more reliably preventing dust and particles from leaking out of the case.

The case 62, the support member 65, and the frame member 50 can be moved up and down along the support column 61. Alternatively, the entire case 62, support member 65, frame member 50, and support column 61 may be movable up and down. When the inner diameter of the frame member 50 is smaller than the diameter of the wafer W (FIG. 7B), the frame member can be raised and lowered within a range that includes at least a position where the lower surface 52 of the frame member 50 is close to the upper surface of the wafer. When the inner diameter of the frame member 50 is larger than the diameter of the wafer W (FIG. 7C), the frame member can be moved up and down within a range that includes at least a position where the inner wall surface 51 of the frame member 50 is close to the outer peripheral end surface of the wafer. Incidentally, since it is sufficient that the frame member support means 60 and the substrate holding section 11 are relatively movable in the vertical direction, the substrate holding section 11 may be able to be moved up and down.

When the substrate holder 11 can hold the wafer W at an angle from the horizontal, the frame member support means 60 can also hold the wafer W while keeping the support member 65 coaxial with the substrate holder 11 by, for example, tilting the support 61. It can be tilted according to the inclination of the portion 11.

Next, a method of using the substrate processing apparatus of this embodiment will be described with reference to FIG. 10, using hydrofluoric acid etching of a silicon wafer as an example, along the process flow of FIG. 9. In the following, a case where the inner diameter of the frame member is larger than the diameter of the wafer (FIG. 7C) will be explained as an example.

(S8) With the wafer W fixed to the substrate holder 11 and not rotating, the frame member 50 is lowered to a position where the inner wall surface 51 of the frame member 50 and the outer peripheral end surface of the wafer are close to each other (FIG. 10A). At this time, the frame member 50 is lowered to a position where the outflow hole 55 formed in the frame member 50 is hidden below the upper surface of the wafer (FIG. 10B).

(S9) The HF liquid is discharged onto the wafer from the nozzle 13a at a predetermined flow rate (S9a, FIG. 10C). The wafer W and the frame member 50 are rotated in the same direction at a low speed of about 30 rpm for about 10 seconds to spread the HF liquid evenly throughout the storage section 54.

The rotation of the wafer W and the frame member 50 is stopped, and the etching process is performed while the rotation is stopped for about 60 seconds (S9b). The wafer W and the frame member 50 are rotated at about 60 rpm, and the frame member 50 is slightly raised while supplying the HF liquid from the nozzle 13a at a predetermined flow rate, so that the outflow hole 55 is exposed above the upper surface of the wafer (FIG. 10D). ). As a result, the HF liquid in the reservoir 54 flows out of the wafer from the outflow hole 55 in addition to the gap H. The reason why the HF liquid is also allowed to flow out from the outflow hole 55 is to stabilize the flow of the processing liquid. Furthermore, by controlling the position of the frame member 50 in the height direction in units of several tens of micrometers, the amount of HF liquid flowing out from the storage section 54 can be adjusted depending on the amount by which the outflow hole 55 protrudes above the wafer. When the HF liquid supply amount and outflow amount are balanced and the film thickness of the HF liquid on the wafer surface becomes constant, etching processing is performed for another 60 seconds (S9b).

When the etching process is completed, the supply of the HF liquid is stopped (S9c). During the etching process, the temperature of the liquid, the thickness of the liquid film, the HF concentration of the liquid, the concentration of hydrofluorosilicic acid, the thickness of the silicon oxide film on the wafer, etc. are measured by sensors installed above the wafer, and the specified values are measured. Using the value as a threshold, the time of rotation and HF liquid discharge may be extended or stopped, the rotation speed may be changed, or control may be performed according to the sensor value.

(S10) At the same time as stopping the supply of the HF liquid, discharge of pure water is started from the nozzle 13b to clean the wafer and the frame member 50 (S10a, FIG. 10E). Next, the frame member 50 is raised to a height of 50 mm from the top surface of the wafer, the rotation of the frame member is stopped, and the wafer is rotated at about 500 rpm to shake off the pure water from the outer periphery of the wafer (S10b, FIG. 10F).

(S11) After the rinsing process is completed, a drying process is performed to complete the HF etching process.

In this embodiment, the substrate is processed while continuing to supply the HF liquid, but since the flow rate of the HF liquid discharged from the outer periphery of the wafer by the frame member 50 is lower than that of the conventional continuous flow method, the amount of HF liquid used is reduced. can.

Note that in the above method, the wafer W and the frame member 50 are always rotated in the same direction and at the same speed, but the rotation direction and rotation speed of the wafer and the frame member may be the same or different.

Moreover, although the above method has been described for the case where the inner diameter of the frame member 50 is larger than the diameter of the wafer W, the same method can be performed when the inner diameter of the frame member 50 is smaller than the diameter of the wafer W.

The present invention is not limited to the above-described embodiments and examples, and various modifications can be made within the scope of the technical idea.

For example, in the above embodiment, the wafer is held horizontally and processed, but the wafer may be slightly tilted from the horizontal and processed. In this case, it is possible to create a state in which the liquid is present on the wafer and a state in which it is not present in the reservoirs 24 and 54 for each rotation period, so that the cleaning conditions can be varied. Furthermore, processing can be performed while changing the inclination angle of the wafer.

10 Substrate processing apparatus 11 Substrate holding section 12 Substrate rotation means 13 Nozzle (processing liquid supply section)
20 Frame member 21 Inner wall surface 22 Recessed portion 23 Flange portion 24 Storage portion 30 Frame member holding means 31 Rotating shaft 32 Arm 33 Holding portion 40 Substrate processing apparatus 50 Frame member 51 Inner wall surface 52 Lower surface 53 Flange portion 54 Storage portion 55 Outflow hole 60 Frame Member support means 61 Support column 62 Case 63 Hole 64 Ball bearing 65 Support member 66 Motor 67 Belt 68 Exhaust port G, H Gap W Wafer (substrate)

Claims (2)

A substrate processing apparatus for processing a substrate using a processing liquid,
a substrate holding part that holds the substrate;
substrate rotation means for rotating the substrate holding section;
a processing liquid supply unit that discharges the processing liquid onto the substrate;
a frame member whose inner enclosing shape is smaller than the outer shape of the substrate in a plan view, and which can be placed on the outer periphery of the substrate to form a reservoir for the processing liquid together with the substrate;
a frame member holding means capable of holding or opening the frame member and movable vertically relative to the substrate holding section;
A substrate processing apparatus having: A substrate processing apparatus for processing a disk-shaped substrate using a processing liquid,
a substrate holding part that holds the substrate;
substrate rotation means for rotating the substrate holding section;
a processing liquid supply unit that discharges the processing liquid onto the substrate;
a frame member that forms a reservoir for the processing liquid together with the substrate;
A frame member rotating means for supporting the frame member and rotating the frame member is provided, and when the inner diameter of the frame member is smaller than the diameter of the substrate, the lower surface of the frame member is positioned close to the upper surface of the substrate. If the inner diameter of the frame member is larger than the diameter of the substrate, the inner wall surface of the frame member is vertically connected to the substrate holder at least in a range that includes at least a position close to the outer peripheral end surface of the substrate. a relatively movable frame member support means;
A substrate processing apparatus having:

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