JP2023141507A - Polishing method and polishing device - Google Patents

Abstract

To provide a polishing method in which, by polishing a peripheral edge of a substrate by using a plurality of polishing heads, warpage of the substrate can be suppressed while the overall polishing processing time is reduced.SOLUTION: In a polishing method, a substrate W is held by a substrate holding part 5 and the substrate W is rotated. The polishing method includes polishing a second polishing region of a peripheral edge of the substrate W by moving or inclining a second polishing head 10B in a second direction D2 in a state where the second polishing head 10B presses a second polishing tape 2B against the peripheral edge of the substrate W while polishing a first polishing region of the peripheral edge of the substrate W by moving or inclining a first polishing head 10A in a first direction D1 in a state where the first polishing head 10A presses a first polishing tape 2A against the peripheral edge of the substrate W. The first direction D1 and the second direction D2 are opposite directions.SELECTED DRAWING: Figure 6

Description

The present invention relates to a polishing method and a polishing apparatus for polishing a peripheral portion of a substrate such as a wafer.

BACKGROUND ART In recent years, management of the surface condition of a substrate has attracted attention from the viewpoint of improving yield in the manufacture of semiconductor devices. In the manufacturing process of semiconductor devices, various materials are deposited on silicon wafers. Therefore, unnecessary films and surface roughness are formed on the peripheral edge of the substrate. In recent years, a method of transporting a substrate by holding only the peripheral edge of the substrate with an arm has become common. Under such circumstances, unnecessary films remaining on the periphery peel off during various steps and adhere to devices formed on the substrate, reducing yield. Therefore, in order to remove unnecessary films formed on the peripheral edge of the substrate, the peripheral edge of the substrate is polished using a polishing device.

As such a polishing device, a device that polishes the peripheral edge of a substrate using a polishing tape is known. The peripheral edge of the substrate is polished by pressing the polishing tape against the peripheral edge of the rotating substrate using the polishing head while feeding the polishing tape in a predetermined direction. As conventional polishing apparatuses, there are known ones equipped with a single polishing head, and those equipped with a plurality of polishing heads in order to shorten the overall polishing processing time, as shown in Patent Document 1. .

Patent No. 5274993

FIG. 24 is a diagram showing how the peripheral edge of the substrate W is being polished by the two polishing heads 110A and 110B. The peripheral edge of the substrate W is polished by pressing the polishing tape 102A against the peripheral edge of the substrate W with the polishing head 110A and simultaneously pressing the polishing tape 102B against the peripheral edge of the substrate W with the polishing head 110B. When the substrate W is polished with two polishing heads, the overall polishing processing time is shorter than when the substrate W is polished with only one polishing head.

However, as shown in FIG. 24, when the pressing force F by the two polishing heads 110A and 110B is applied to the periphery of the substrate W, the periphery of the substrate W is An excessive load may be applied, and the substrate W may warp. Due to such deformation of the substrate W, the pressing force by the polishing heads 110A and 110B is not applied uniformly to the peripheral edge of the substrate W, and as a result, the peripheral edge of the substrate W cannot be uniformly polished.

Therefore, the present invention provides a polishing method and a polishing apparatus that can reduce the overall polishing time and suppress warpage of the substrate by polishing the peripheral edge of the substrate using a plurality of polishing heads. .

In one aspect, there is provided a method for polishing a peripheral edge of a substrate, wherein the substrate is held by a substrate holder, the substrate is rotated, and a first polishing tape is pressed against the peripheral edge by a first polishing head. While moving or tilting the first polishing head in a first direction to polish the first polishing area of the peripheral edge, the second polishing head presses the second polishing tape against the peripheral edge, and the second polishing tape is pressed against the peripheral edge. polishing a second polishing area of the peripheral edge by moving or tilting a second polishing head in a second direction, the first direction and the second direction being opposite directions; A method is provided.
In one aspect, the first polishing region is one of the top edge portion and the bottom edge portion of the peripheral portion, and the second polishing region is one of the top edge portion and the bottom edge portion of the peripheral portion. In the radial direction of the substrate, the first direction is one of a direction toward the center of the substrate and a direction away from the center of the substrate, and the second direction is the other direction. , in the radial direction of the substrate, the other of the direction toward the center of the substrate and the direction away from the center of the substrate.

In one aspect, the moving speed of the first polishing head and the moving speed of the second polishing head are equal.
In one aspect, the first polishing region and the second polishing region are beveled portions of the peripheral edge, and the first direction is a direction from an upper side to a lower side of the beveled portion and a direction below the beveled portion. The second direction is one of the directions from the side to the top, and the second direction is the other of the direction from the top to the bottom of the beveled portion and the direction from the bottom to the top of the beveled portion. be.
In one embodiment, the tilting speed of the first polishing head and the tilting speed of the second polishing head are equal.

In one aspect, an angle between a line connecting the first polishing head and the center of the substrate and a line connecting the second polishing head and the center of the substrate is within a range of 0 degrees to 90 degrees. .
In one aspect, when polishing the first polishing region, after moving or tilting the first polishing head in the first direction, the first polishing head is further moved or tilted in the second direction. to polish the first polishing area back and forth at least once, and when polishing the second polishing area, after moving or tilting the second polishing head in the second direction, the second polishing head is further moved or tilted in the first direction to reciprocate and polish the second polishing area at least once.

In one aspect, the apparatus for polishing a peripheral edge of a substrate includes a substrate holding part that holds the substrate and rotates the substrate around a predetermined rotation axis, and a first polishing tape that presses a first polishing tape against the peripheral edge. a first polishing head, a second polishing head that presses a second polishing tape against the peripheral edge, a first polishing head moving mechanism that moves or tilts the first polishing head, and a second polishing head that moves or tilts the second polishing head. 2, a polishing head movable mechanism, and an operation control unit that controls the operation of the polishing device, and the operation control unit is configured to move the first polishing tape in a state where the first polishing head presses the first polishing tape against the peripheral edge. The first polishing head is moved or tilted in a first direction by the first polishing head movable mechanism, and while polishing the first polishing area of the peripheral edge, the second polishing head moves the second polishing tape to the peripheral edge. The second polishing head is moved or tilted in a second direction by the second polishing head movable mechanism in a state where the second polishing head is pressed against the second polishing area, and the second polishing area of the peripheral edge part is polished. A polishing apparatus is provided, wherein the first direction and the second direction are opposite directions.

In one aspect, the first polishing head moving mechanism is a first polishing head translation mechanism that translates the first polishing head, and the second polishing head moving mechanism translates the second polishing head. a second polishing head translational movement mechanism, the first polishing region is one of a top edge portion and a bottom edge portion of the peripheral portion, and the second polishing region is a top edge portion of the peripheral portion. and a bottom edge portion, the first direction is either one of a direction approaching the predetermined rotation axis and a direction away from the predetermined rotation axis, and the second The direction is the other of the direction toward the predetermined rotation axis and the direction away from the predetermined rotation axis.

In one aspect, the moving speed of the first polishing head and the moving speed of the second polishing head are equal.
In one aspect, the first polishing head movable mechanism is a first polishing head tilting mechanism that tilts the first polishing head, and the second polishing head movable mechanism is a second polishing head tilting mechanism that tilts the second polishing head. a head tilting mechanism, the first polishing region and the second polishing region are bevel portions of the peripheral edge portion, and the first direction is a direction from an upper side to a lower side of the bevel portion and a direction from the top to the bottom of the bevel portion; The second direction is one of the directions from the bottom to the top of the beveled portion and the direction from the bottom to the top of the beveled portion. On the other hand.
In one embodiment, the tilting speed of the first polishing head and the tilting speed of the second polishing head are equal.

In one aspect, an angle between a line connecting the first polishing head and the center of the substrate and a line connecting the second polishing head and the center of the substrate is within a range of 0 degrees to 90 degrees. .
In one aspect, the operation control unit issues a command to the first polishing head movable mechanism to move or tilt the first polishing head in the first direction, and then moves the first polishing head to the second polishing head. further moving or tilting the first polishing area in the second direction to reciprocate the first polishing area at least once, and issuing a command to the second polishing head movable mechanism to move or tilt the second polishing head in the second direction. After tilting, the second polishing head is further moved or tilted in the first direction to reciprocate and polish the second polishing area at least once.

According to the present invention, while the first polishing head is moved or tilted in the first direction to polish the first polishing area on the peripheral edge of the substrate, the second polishing head is moved or tilted in the second direction opposite to the first direction. By moving or tilting the second polishing region in the peripheral edge of the substrate in the direction of , it is possible to reduce the overall polishing time and suppress warpage of the substrate.
Further, according to the present invention, the first polishing head and the second polishing head polish the substrate while moving in the first direction and the second direction, which are opposite directions. 2. When the polishing head is moved by pressing it from both the top edge side and the bottom edge side of the substrate, the substrate moves together with the first polishing head and the second polishing head, and becomes misaligned with respect to the substrate holding part. can be prevented.

FIGS. 1(a) and 1(b) are enlarged cross-sectional views showing the peripheral portion of the substrate. FIG. 1 is a plan view showing one embodiment of a polishing device. 3 is a side view seen from the direction indicated by arrow A in FIG. 2. FIG. 3 is a side view seen from the direction indicated by arrow B in FIG. 2. FIG. FIG. 3 is a diagram showing a state in which a bevel portion of a substrate is being polished by a first polishing head. FIG. 6(a) is a diagram showing one embodiment of the polishing operation of the first polishing head, and FIG. 6(b) is a diagram showing one embodiment of the polishing operation of the second polishing head. FIGS. 7A and 7B are diagrams showing other embodiments of polishing operations of the first polishing head and the second polishing head. FIGS. 8A and 8B are diagrams showing other embodiments of polishing operations of the first polishing head and the second polishing head. FIGS. 9A and 9B are diagrams showing other embodiments of polishing operations of the first polishing head and the second polishing head. FIG. 10(a) is a diagram showing an embodiment of the polishing operation of the first polishing head when polishing the beveled portion of the substrate, and FIG. 10(b) is a diagram showing an embodiment of the polishing operation of the first polishing head when polishing the beveled portion of the substrate. FIG. 2 is a diagram illustrating an embodiment of a polishing operation of two polishing heads. FIGS. 11A and 11B are diagrams illustrating polishing operations of a first polishing head and a second polishing head according to another embodiment. FIGS. 12(a) and 12(b) are diagrams illustrating polishing operations of a first polishing head and a second polishing head according to another embodiment. 13(a) and 13(b) are diagrams illustrating polishing operations of a first polishing head and a second polishing head according to another embodiment. FIG. 3 is a plan view showing another embodiment of the polishing device. FIGS. 15(a) to 15(d) are diagrams showing one embodiment of the polishing operation of the first to fourth polishing heads. FIGS. 16(a) to 16(d) are diagrams showing an example of another embodiment of the polishing operation of the first to fourth polishing heads. FIGS. 17(a) to 17(d) are diagrams showing an example of another embodiment of the polishing operation of the first to fourth polishing heads. FIGS. 18(a) to 18(d) are diagrams showing an example of another embodiment of the polishing operation of the first to fourth polishing heads. FIGS. 19(a) to 19(d) are diagrams showing one embodiment of the polishing operations of the first to fourth polishing heads when polishing a beveled portion of a substrate. FIGS. 20(a) to 20(d) are diagrams showing an example of another embodiment of the polishing operation of the first to fourth polishing heads. FIGS. 21(a) to 21(d) are diagrams showing an example of another embodiment of the polishing operation of the first to fourth polishing heads. FIGS. 22(a) to 22(d) are diagrams showing an example of another embodiment of the polishing operation of the first to fourth polishing heads. FIGS. 23(a) and 23(b) are diagrams for explaining yet another embodiment in which the peripheral edge of a substrate is polished using four polishing heads. FIG. 3 is a diagram showing how the peripheral edge of a substrate is polished with two polishing heads.

Embodiments of the present invention will be described below with reference to the drawings.
FIGS. 1(a) and 1(b) are enlarged cross-sectional views showing the peripheral portion of the substrate W. FIG. More specifically, FIG. 1(a) is a sectional view of a so-called straight type substrate, and FIG. 1(b) is a sectional view of a so-called round type substrate. The bevel portion B has a chamfered shape or a rounded shape.

In the substrate W of FIG. 1(a), the bevel portion B is composed of an upper inclined surface (upper bevel portion) B1, a lower inclined surface (lower bevel portion) B2, and a side portion (apex) B3. This is the outermost surface of the In the substrate W of FIG. 1(b), the bevel portion B is a portion that constitutes the outermost peripheral surface of the substrate W and has a curved cross section. The top edge portion E1 is an annular flat portion located inside the bevel portion B in the radial direction. The bottom edge portion E2 is an annular flat portion located on the opposite side from the top edge portion E1 and located inside the bevel portion B in the radial direction. The top edge portion E1 may include a region where a device is formed. In this specification, the peripheral portion of the substrate W refers to a region including any one of the top edge portion E1, the bevel portion B, and the bottom edge portion E2.

FIG. 2 is a plan view showing one embodiment of a polishing apparatus. FIG. 3 is a side view seen from the direction indicated by arrow A in FIG. FIG. 4 is a side view seen from the direction indicated by arrow B in FIG. The polishing device is a device for polishing the peripheral edge of a substrate W such as a semiconductor wafer. The polishing apparatus includes a substrate holder 5, a first polishing head 10A, a second polishing head 10B, a first polishing tape supply mechanism 20A, a second polishing tape supply mechanism 20B, a lower supply nozzle 31, and an upper supply nozzle 32. ing.

The substrate holding unit 5 includes a holding stage 7 that holds the substrate W by vacuum suction, a shaft 8 connected to the center of the holding stage 7, and a holding stage drive mechanism 9 that rotates and moves the holding stage 7 up and down. We are prepared. The holding stage drive mechanism 9 is configured to rotate the holding stage 7 around a predetermined rotation axis Cr and to be movable in the vertical direction along the predetermined rotation axis Cr. The axis passing through the center O1 of the substrate W and the predetermined rotation axis Cr substantially coincide with each other.

The first polishing head 10A is configured to press the first polishing tape 2A against the peripheral edge of the substrate W to polish the peripheral edge of the substrate W. The second polishing head 10B is configured to press the second polishing tape 2B against the peripheral edge of the substrate W to polish the peripheral edge of the substrate W. Since the first polishing head 10A and the second polishing head 10B basically have the same configuration, the first polishing head 10A will be described below.

The first polishing head 10A includes a pressing member 12 that presses the polishing surface of the first polishing tape 2A against the peripheral edge of the substrate W, and an air cylinder (drive mechanism) that moves the pressing member 12 toward the peripheral edge of the substrate W. It is equipped with 15. By controlling the air pressure supplied to the air cylinder 15, the pressing force of the first polishing tape 2A against the substrate W is adjusted. The pressing member 12 is arranged on the back side of the first polishing tape 2A (on the back side of the polishing surface having abrasive grains). When the pressing member 12 is moved toward the substrate W by the air cylinder 15, the pressing member 12 presses the first polishing tape 2A against the peripheral edge of the substrate W from the back side thereof. Thereby, the first polishing head 10A polishes the peripheral portion of the substrate W.

As shown in FIG. 2, an angle α1 between a line L1 connecting the first polishing head 10A and the center O1 of the substrate W and a line L2 connecting the second polishing head 10B and the center O1 of the substrate W is 0 degrees. It is within 90 degrees from. The angle α1 may be any angle smaller than 180 degrees, and may be, for example, 130 degrees, 50 degrees, or 0 degrees (i.e., a position where the first polishing head 10A and the second polishing head 10B overlap vertically). good.

The first polishing tape supply mechanism 20A is configured to supply the first polishing tape 2A to the first polishing head 10A and to collect the first polishing tape 2A from the first polishing head 10A. The second polishing tape supply mechanism 20B is configured to supply the second polishing tape 2B to the second polishing head 10B and to collect it from the second polishing head 10B. Since the first polishing tape supply mechanism 20A and the second polishing tape supply mechanism 20B basically have the same configuration, the first polishing tape supply mechanism 20A will be described below.

The first polishing tape supply mechanism 20A includes a tape unwinding reel 21, a tape take-up reel 22, and a plurality of guide rollers 24, 25, 26, and 27. The tape unwinding reel 21, the tape take-up reel 22, and the plurality of guide rollers 24, 25, 26, 27 are fixed to a reel base 28. The first polishing tape 2A is supplied to the first polishing head 10A so that the polishing surface of the first polishing tape 2A faces the peripheral edge of the substrate W. The traveling direction of the first polishing tape 2A is guided by guide rollers 24, 25, 26, and 27.

A tension motor (not shown) is connected to the tape take-off reel 21 and the tape take-up reel 22, respectively. The tape unwinding reel 21 and the tape take-up reel 22 are fixed to a reel base 28 via a tension motor. Each tension motor is configured to apply a predetermined torque to the tape unwinding reel 21 and the tape take-up reel 22, and to apply a predetermined tension to the first polishing tape 2A.

The lower supply nozzle 31 is configured to supply liquid to the lower surface of the substrate W. The upper supply nozzle 32 is configured to supply liquid to the upper surface of the substrate W. An example of the liquid supplied to the substrate W is pure water. During polishing of the substrate W, liquid is supplied from the lower supply nozzle 31 to the lower surface of the substrate W, and liquid is supplied from the upper supply nozzle 32 to the upper surface of the substrate W.

The polishing apparatus further includes a first polishing head translational movement mechanism 40A as a first polishing head movement mechanism and a second polishing head translational movement mechanism 40B as a second polishing head movement mechanism. The first polishing head translation mechanism 40A is configured to translate the first polishing head 10A along the radial direction of the substrate W. The second polishing head translation mechanism 40B is configured to translate the second polishing head 10B along the radial direction of the substrate W. Since the first polishing head translational movement mechanism 40A and the second polishing head translational movement mechanism 40B basically have the same configuration, the first polishing head translational movement mechanism 40A will be described below.

The first polishing head translation mechanism 40A includes a connecting member 43, a guide rail 44, a connecting shaft 46, and an air cylinder (drive mechanism) 47. The first polishing head translation mechanism 40A is connected to the first polishing head 10A and the first polishing tape supply mechanism 20A via a movable plate 41. More specifically, the polishing head support member 18 connected to the first polishing head 10A and the reel base 28 of the first polishing tape supply mechanism 20A are connected to the upper surface of the movable plate 41, and the first polishing head is translated. The moving mechanism 40A is connected to the lower surface of the movable plate 41. The entire first polishing head 10A and first polishing tape supply mechanism 20A are movable together with the movable plate 41.

The guide rail 44 extends in the same direction as the line connecting the predetermined rotation axis Cr on the holding stage 7 (i.e., the center O1 of the substrate W) and the first polishing head 10A, and is fixed to the base plate 48. . The air cylinder 47 is connected to the movable plate 41 via a connecting member 43 and a connecting shaft 46, and is fixed to a base plate 48. The first polishing head translation mechanism 40A drives the air cylinder 47 to move the movable plate 41 along the guide rail 44 at a predetermined movement speed, thereby moving the first polishing head 10A and the first polishing tape supply mechanism 20A. is moved at a predetermined moving speed in a direction approaching a predetermined rotational axis Cr of the substrate W (i.e., the center O1 of the substrate W) and in a direction away from the predetermined rotational axis Cr (i.e., the center O1 of the substrate W). I can do it.

Note that the first polishing head 10A is moved in the direction approaching the predetermined rotation axis Cr of the substrate W (i.e., the center O1 of the substrate W) and in the direction away from the predetermined rotation axis Cr (i.e., the center O1 of the substrate W). The specific configuration of the first polishing head translation mechanism 40A is not limited to the present embodiment, as long as it is possible to do so.

The polishing apparatus further includes a first polishing head tilting mechanism 50A as a first polishing head moving mechanism and a second polishing head tilting mechanism 50B as a second polishing head moving mechanism. The first polishing head tilting mechanism 50A is connected to the first polishing head 10A, and the second polishing head tilting mechanism 50B is connected to the second polishing head 10B. The first polishing head tilting mechanism 50A is configured to tilt the first polishing head 10A with respect to the substrate holding surface of the holding stage 7. The second polishing head tilting mechanism 50B is configured to tilt the second polishing head 10B with respect to the substrate holding surface of the holding stage 7. Since the first polishing head tilting mechanism 50A and the second polishing head tilting mechanism 50B basically have the same configuration, the first polishing head tilting mechanism 50A will be described below.

The first polishing head tilting mechanism 50A includes a crank arm 52 connected to the first polishing head 10A, and an arm rotation device 53 that rotates the crank arm 52. One end of the crank arm 52 is located at substantially the same height as the substrate holding surface of the holding stage 7 and is connected to an arm rotation device 53. The other end of the crank arm 52 is connected to the first polishing head 10A. The arm rotation device 53 is disposed inside the polishing head support member 18 , and the crank arm 52 extends through the polishing head support member 18 .

When the arm rotation device 53 rotates the crank arm 52, the first polishing head tilting mechanism 50A tilts the entire first polishing head 10A with respect to the substrate W on the substrate holding surface of the holding stage 7 at a predetermined tilting speed. can be done. Furthermore, the first polishing head tilting mechanism 50A is configured to be able to maintain the first polishing head 10A at a predetermined inclination angle. Note that the specific configuration of the first polishing head tilting mechanism 50A is not limited to this embodiment, as long as the first polishing head 10A can be tilted with respect to the substrate holding surface of the holding stage 7 and the substrate W.

The first polishing head 10A shown in FIG. 3 is tilted so that the top edge portion E1 of the substrate W (see FIGS. 1(a) and 1(b)) can be polished by the first polishing head tilting mechanism 50A. It is in a state of The second polishing head 10B shown in FIG. 4 is tilted so that the bottom edge portion E2 of the substrate W (see FIGS. 1(a) and 1(b)) can be polished by the second polishing head tilting mechanism 50B. It is in a state of

FIG. 5 is a diagram showing how the bevel portion B of the substrate W (see FIGS. 1(a) and 1(b)) is being polished by the first polishing head 10A. The first polishing head tilting mechanism 50A can polish the bevel portion B of the substrate W by continuously changing the inclination angle of the first polishing head 10A. In this way, the first polishing head 10A and the second polishing head 10B are tilted by the first polishing head tilting mechanism 50A and the second polishing head tilting mechanism 50B, so that the top edge portion E1, which is the peripheral edge of the substrate W, , the bottom edge portion E2, and the bevel portion B can be polished.

The polishing apparatus of this embodiment includes a first polishing head translation mechanism 40A and a first polishing head tilting mechanism 50A as a first polishing head movable mechanism, and a second polishing head translation mechanism as a second polishing head movable mechanism. Although the polishing apparatus includes the moving mechanism 40B and the second polishing head tilting mechanism 50B, in one embodiment, the polishing apparatus includes only the first polishing head translation mechanism 40A as the first polishing head movable mechanism, and the second polishing head movable mechanism 40B. It may be configured to include only the second polishing head translation mechanism 40B as a mechanism and to polish only the top edge portion E1 or the bottom edge portion B2 of the peripheral edge portion of the substrate W.

The polishing apparatus further includes an operation control section 80 that controls the operation of the polishing apparatus. Substrate holder 5, first polishing head 10A, second polishing head 10B, first polishing tape supply mechanism 20A, second polishing tape supply mechanism 20B, lower supply nozzle 31, upper supply nozzle 32, first polishing head translational movement The mechanism 40A, the second polishing head translation mechanism 40B, the first polishing head tilting mechanism 50A, and the second polishing head tilting mechanism 50B are electrically connected to the operation control section 80. Substrate holder 5, first polishing head 10A, second polishing head 10B, first polishing tape supply mechanism 20A, second polishing tape supply mechanism 20B, lower supply nozzle 31, upper supply nozzle 32, first polishing head translational movement The operations of the mechanism 40A, the second polishing head translation mechanism 40B, the first polishing head tilting mechanism 50A, and the second polishing head tilting mechanism 50B are controlled by the operation control unit 80.

The operation control unit 80 includes at least one computer. The operation control unit 80 includes a storage device 80a that stores programs, and an arithmetic device 80b that executes calculations according to the programs. The storage device 80a includes a main storage device (for example, random access memory) that can be accessed by the arithmetic device 80b, and an auxiliary storage device (for example, a hard disk drive or solid state drive) that stores programs. The arithmetic device 80b includes a CPU (central processing unit), a GPU (graphic processing module), or the like that performs arithmetic operations according to instructions included in a program stored in the storage device 80a. However, the specific configuration of the operation control section 80 is not limited to these examples.

The polishing apparatus of this embodiment simultaneously drives the first polishing head 10A and the second polishing head 10B to simultaneously polish the peripheral portion of the substrate W. Polishing of the peripheral edge of the substrate W is performed as follows. When the substrate W is transported to the polishing apparatus, the operation control section 80 issues a command to the holding stage drive mechanism 9 of the substrate holding section 5 to raise the holding stage 7. The substrate W is placed on the substrate holding surface of the holding stage 7 and held by vacuum suction. The operation control unit 80 issues a command to the holding stage drive mechanism 9 of the substrate holding unit 5 to lower the substrate W to the polishing position and rotate the holding stage 7 and the substrate W. Further, the operation control unit 80 issues a command to the lower supply nozzle 31 and the upper supply nozzle 32 to supply liquid from the lower supply nozzle 31 and the upper supply nozzle 32.

Next, the operation control unit 80 issues a command to the first polishing tape supply mechanism 20A to start supplying the first polishing tape 2A to the first polishing head 10A, and issues a command to the second polishing tape supply mechanism 20B. Then, supply of the second polishing tape 2B to the second polishing head 10B is started. Thereafter, the operation control unit 80 issues a command to the air cylinder 15 of the first polishing head 10A to press the first polishing tape 2A against the peripheral edge of the substrate W with the pressing member 12 of the first polishing head 10A, and A command is issued to the air cylinder 15 of the polishing head 10B to press the second polishing tape 2B against the peripheral edge of the substrate W using the pressing member 12 of the second polishing head 10B.

When polishing the top edge portion E1 and bottom edge portion E2 of the substrate W, the operation control unit 80 issues a command to the first polishing head translation mechanism 40A to move the first polishing tape 2A to the substrate with the first polishing head 10A. While moving the first polishing head 10A while being pressed against either the top edge portion E1 or the bottom edge portion E2 of the W, a command is issued to the second polishing head translation mechanism 40B to perform the second polishing. The second polishing head 10B is moved with the head 10B pressing the second polishing tape 2B against the other of the top edge portion E1 and bottom edge portion E2 of the substrate W.

When polishing the bevel portion B of the substrate W, the operation control unit 80 issues a command to the first polishing head tilting mechanism 50A to press the first polishing tape 2A against the bevel portion B of the substrate W with the first polishing head 10A. In this state, while tilting the first polishing head 10A, a command is issued to the second polishing head tilting mechanism 50B so that the second polishing tape 2B is pressed against the bevel portion B of the substrate W by the second polishing head 10B. , tilting the second polishing head 10B.

After the peripheral edge of the substrate W is polished according to a predetermined polishing recipe, the operation control unit 80 issues a command to the polishing apparatus to finish polishing the substrate W. Specifically, the operation control unit 80 stops the operations of the first polishing head translation mechanism 40A and the second polishing head translation mechanism 40B, or the first polishing head tilting mechanism 50A and the second polishing head tilting mechanism 50B. , the driving of the air cylinder 15 of the first polishing head 10A and the air cylinder 15 of the second polishing head 10B is stopped, and the pressing member 12 of the first polishing head 10A and the pressing member 12 of the second polishing head 10B are removed from the substrate W. Separate. After that, the operation control unit 80 stops the operations of the substrate holding unit 5, the first polishing tape supply mechanism 20A, the second polishing tape supply mechanism 20B, the lower supply nozzle 31, and the upper supply nozzle 32, and removes the substrate W. Finish polishing.

FIG. 6(a) is a diagram showing one embodiment of the polishing operation of the first polishing head 10A, and FIG. 6(b) is a diagram showing one embodiment of the polishing operation of the second polishing head 10B. The polishing apparatus of this embodiment polishes the bottom edge portion E2 of the substrate W using the second polishing head 10B while polishing the top edge portion E1 of the substrate W using the first polishing head 10A. FIGS. 6A and 6B are enlarged schematic views of the contact portions between the top edge portion E1 of the substrate W and the first polishing tape 2A, and between the bottom edge portion E2 and the second polishing tape 2B.

The first polishing region polished by the first polishing head 10A is an area between the first polishing point P1 and the second polishing point P2 within the top edge portion E1 of the substrate W. The first polishing point P1 is located closer to the center O1 of the substrate W (that is, the predetermined rotation axis Cr) than the second polishing point P2. The second polishing region polished by the second polishing head 10B is an area between the third polishing point P3 and the fourth polishing point P4 within the bottom edge portion E2 of the substrate W. The third polishing point P3 is located further from the center O1 of the substrate W (ie, the predetermined rotation axis Cr) than the fourth polishing point P4.

In this embodiment, the first polishing area and the second polishing area are located on opposite sides. That is, the first polishing point P1 and the second polishing point P2, which are both ends of the first polishing area, and the third polishing point P3, and fourth polishing point P4, which are both ends of the second polishing area, are located on opposite sides. ing. The distance from the center O1 of the substrate W (i.e., the predetermined rotational axis Cr) of the first polishing point P1 and the distance from the center O1 (i.e., the predetermined rotational axis Cr) of the substrate W of the fourth polishing point P4 are equal. The distance from the center O1 of the substrate W (i.e., the predetermined rotational axis Cr) of the second polishing point P2 and the distance from the center O1 (i.e., the predetermined rotational axis Cr) of the substrate W of the third polishing point P3 are equal. That is, the lengths of the first polishing region and the second polishing region in the radial direction of the substrate W are equal.

As shown in FIG. 6(a), the first polishing head 10A presses the first polishing tape 2A against the first polishing point P1 and starts polishing the first polishing area. Next, with the first polishing head 10A pressing the first polishing tape 2A against the substrate W, the first polishing head translation mechanism 40A moves the first polishing head 10A in the first direction D1 to the second polishing point P2. move it to The first direction D1 is a direction away from the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction away from the predetermined rotation axis Cr.

Further, with the first polishing head 10A pressing the first polishing tape 2A against the substrate W, the first polishing head translation mechanism 40A moves the first polishing head 10A in the second direction D2 to the first polishing point P1. move it. The second direction D2 is a direction approaching the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction approaching the predetermined rotation axis Cr. The first direction D1 and the second direction D2 are opposite directions. Thereby, the first polishing head 10A reciprocates the first polishing area once. In one embodiment, the first polishing head 10A may be further moved in the first direction D1 and the polishing operation shown in FIG. 6(a) may be repeated to reciprocate and polish the first polishing region multiple times. Alternatively, the first polishing area may be polished one way without moving the first polishing head 10A in the second direction D2.

As shown in FIG. 6(b), the second polishing head 10B presses the second polishing tape 2B against the third polishing point P3 and starts polishing the second polishing area. Next, with the second polishing head 10B pressing the second polishing tape 2B against the substrate W, the second polishing head translation mechanism 40B moves the second polishing head 10B in the second direction D2 to the fourth polishing point P4. move it to The second direction D2 is the same as the second direction D2 described with reference to FIG. 6(a).

Further, with the second polishing head 10B pressing the second polishing tape 2B against the substrate W, the second polishing head translation mechanism 40B moves the second polishing head 10B in the first direction D1 to the third polishing point P3. move it. The first direction D1 is the same as the first direction D1 described with reference to FIG. 6(a). Thereby, the second polishing head 10B reciprocates the second polishing area once. In one embodiment, the second polishing head 10B may be further moved in the second direction D2 and the polishing operation shown in FIG. 6(b) may be repeated to polish the second polishing region back and forth multiple times. Alternatively, the second polishing area may be polished one way without moving the second polishing head 10B in the first direction D1.

The first polishing head 10A and the second polishing head 10B simultaneously polish the first polishing region of the top edge portion E1 and the second polishing region of the bottom edge portion E2. The timing at which the first polishing head 10A presses the first polishing tape 2A against the first polishing point P1 to start polishing the first polishing area, and the timing at which the second polishing head 10B presses the second polishing tape 2B against the third polishing point P3. The timing of pressing and starting polishing of the second polishing area may be simultaneous. The moving speeds of the first polishing head 10A and the second polishing head 10B are equal, and the timing when the first polishing head 10A reaches the second polishing point P2 and the timing when the second polishing head 10B reaches the fourth polishing point P4 are different. , may be simultaneous. Further, the timing at which the first polishing head 10A and the second polishing head 10B turn back and the first polishing head 10A returns to the first polishing point P1 and the timing at which the second polishing head 10B returns to the third polishing point P3 are at the same time. It may be. Furthermore, at the end of polishing, the timing at which the pressing member 12 of the first polishing head 10A is separated from the substrate W and the timing at which the pressing member 12 of the second polishing head 10B is separated from the substrate W may be the same.

According to the present embodiment, the first polishing head 10A and the second polishing head 10B simultaneously polish the first polishing region of the top edge portion E1 and the second polishing region of the bottom edge portion E2, so that a single polishing head is used. Compared to the case where the top edge portion E1 and the bottom edge portion E2 are polished, the overall polishing processing time can be shortened.

Further, the first polishing region and the second polishing region are located on opposite sides, and the first polishing head 10A and the second polishing head 10B are arranged in the first direction D1 and the second direction D1, which are opposite directions. Since the substrate W is polished while moving in the direction D2, the pressing force by the first polishing head 10A and the pressing force by the second polishing head 10B are applied in opposite directions. Therefore, as described with reference to FIG. 24, the pressing force by the first polishing head 10A and the second polishing head 10B is not excessively applied to the peripheral edge of the substrate W, and warpage of the substrate W is suppressed. be able to.

Furthermore, according to the present embodiment, the first polishing head 10A and the second polishing head 10B polish the substrate W while moving in the first direction D1 and the second direction D2, which are opposite directions. When moving the first polishing head 10A and the second polishing head 10B by pressing them from both sides of the top edge and bottom edge of the substrate W, the substrate W moves together with the first polishing head 10A and the second polishing head 10B. As a result, positional displacement with respect to the substrate holder 5 can be prevented.

FIGS. 7A to 9B are diagrams showing other embodiments of the polishing operation of the first polishing head 10A and the second polishing head 10B. The configurations and operations of these embodiments, which are not particularly described, are the same as those of the embodiments described with reference to FIGS. 6(a) and 6(b), and thus redundant explanation thereof will be omitted.

In the embodiment described with reference to FIGS. 6(a) and 6(b), the first polishing region is the top edge portion E1 of the peripheral portion of the substrate W, and the second polishing region is the top edge portion E1 of the peripheral portion of the substrate W. However, as shown in FIGS. 7(a) to 9(b), the first polishing region is either the top edge portion E1 or the bottom edge portion E2. , the second polishing region may be the other of the top edge portion E1 and the bottom edge portion E2.

In the embodiment described with reference to FIGS. 6(a) and 6(b), the first direction D1 is the center O1 of the substrate W (i.e., the predetermined rotation axis) in the radial direction of the substrate W. Cr), and the second direction D2 was a direction approaching the center O1 of the substrate W (i.e., the predetermined rotation axis Cr) in the radial direction of the substrate W. As shown in FIG. 9(b), the first direction D1 is a direction approaching the center O1 of the substrate W (that is, a predetermined rotation axis Cr) in the radial direction of the substrate W, and a direction approaching the center O1 of the substrate W (i.e., a predetermined rotation axis Cr). That is, the second direction D2 may be any direction away from the center O1 of the substrate W (i.e., the predetermined rotation axis Cr) in the radial direction of the substrate W. Cr) and the direction away from the center O1 of the substrate W (that is, the predetermined rotation axis Cr).

In the embodiment shown in FIGS. 7(a) and 7(b), the first polishing area polished by the first polishing head 10A is the top edge portion E1, and the first polishing point P1 and the second polishing point P2 are , within the top edge portion E1. The first polishing point P1 is located further from the center O1 of the substrate W (ie, the predetermined rotation axis Cr) than the second polishing point P2. The second polishing region polished by the second polishing head 10B is the bottom edge portion E2, and the third polishing point P3 and the fourth polishing point P4 are located within the bottom edge portion E2. The third polishing point P3 is located closer to the center O1 of the substrate W (ie, the predetermined rotational axis Cr) than the fourth polishing point P4. The first direction D1 is a direction approaching the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction approaching a predetermined rotation axis Cr. The second direction D2 is a direction away from the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction away from the predetermined rotation axis Cr.

In the embodiment shown in FIGS. 8(a) and 8(b), the first polishing area polished by the first polishing head 10A is the bottom edge portion E2, and the first polishing point P1 and the second polishing point P2 are , within the bottom edge portion E2. The first polishing point P1 is located further from the center O1 of the substrate W (ie, the predetermined rotation axis Cr) than the second polishing point P2. The second polishing region polished by the second polishing head 10B is the top edge portion E1, and the third polishing point P3 and the fourth polishing point P4 are located within the top edge portion E1. The third polishing point P3 is located closer to the center O1 of the substrate W (ie, the predetermined rotational axis Cr) than the fourth polishing point P4. The first direction D1 is a direction approaching the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction approaching a predetermined rotation axis Cr. The second direction D2 is a direction away from the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction away from the predetermined rotation axis Cr.

In the embodiment shown in FIGS. 9(a) and 9(b), the first polishing area polished by the first polishing head 10A is the bottom edge portion E2, and the first polishing point P1 and the second polishing point P2 are , within the bottom edge portion E2. The first polishing point P1 is located closer to the center O1 of the substrate W (that is, the predetermined rotation axis Cr) than the second polishing point P2. The second polishing region polished by the second polishing head 10B is the top edge portion E1, and the third polishing point P3 and the fourth polishing point P4 are located within the top edge portion E1. The third polishing point P3 is located further from the center O1 of the substrate W (ie, the predetermined rotation axis Cr) than the fourth polishing point P4. The first direction D1 is a direction away from the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction away from the predetermined rotation axis Cr. The second direction D2 is a direction approaching the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction approaching the predetermined rotation axis Cr.

Next, the polishing operations of the first polishing head 10A and the second polishing head 10B when polishing the bevel portion B of the substrate W will be described. FIG. 10(a) is a diagram showing an embodiment of the polishing operation of the first polishing head 10A when polishing the bevel portion B of the substrate W, and FIG. FIG. 6 is a diagram illustrating an embodiment of a polishing operation of the second polishing head 10B during polishing. The configuration and operation of this embodiment, which are not particularly described, are the same as those of the embodiment described with reference to FIGS. 6(a) and 6(b), and therefore, redundant explanation thereof will be omitted.

The first polishing region polished by the first polishing head 10A is an area between the first polishing point P1 and the second polishing point P2 in the bevel portion B of the substrate W. The first polishing point P1 is located above the second polishing point P2 in the bevel portion B. The second polishing area polished by the second polishing head 10B is an area between the third polishing point P3 and the fourth polishing point P4 in the bevel portion B of the substrate W. The third polishing point P3 is located lower in the bevel portion B than the fourth polishing point P4.

In this embodiment, the first polishing point P1 is one of both ends of the first polishing area where polishing is started by the first polishing head 10A, and the second polishing area is where polishing is started by the second polishing head 10B. The third polishing point P3, which is one end of both ends, is located on the opposite side of the bevel portion B. Further, the second polishing point P2, which is the other end of the first polishing region, and the fourth polishing point P4, which is the other end of the second polishing region, are located on opposite sides of the bevel portion B. positioned. The first polishing area polished by the first polishing head 10A and the second polishing area polished by the second polishing head 10B substantially match. That is, the first polishing point P1 and the fourth polishing point P4 substantially match, and the second polishing point P2 and the third polishing point P3 substantially match.

As shown in FIG. 10(a), the first polishing head 10A presses the first polishing tape 2A against the first polishing point P1 and starts polishing the first polishing area. Next, with the first polishing tape 2A pressed against the substrate W by the first polishing head 10A, the first polishing head tilting mechanism 50A moves the first polishing head 10A in the first direction D1 to the second polishing point P2. Tilt it. The first direction D1 is a direction from the upper side of the bevel portion B to the lower side.

Furthermore, with the first polishing head 10A pressing the first polishing tape 2A against the substrate W, the first polishing head tilting mechanism 50A tilts the first polishing head 10A in the second direction D2 to the first polishing point P1. let The second direction D2 is a direction from the lower side of the bevel portion B to the upper side. The first direction D1 and the second direction D2 are opposite directions. Thereby, the first polishing head 10A reciprocates the first polishing area once. In one embodiment, the first polishing head 10A may be further tilted in the first direction D1 and the polishing operation shown in FIG. 10(a) may be repeated to polish the first polishing region back and forth a plurality of times. Alternatively, the first polishing area may be polished one way without tilting the first polishing head 10A in the second direction D2.

As shown in FIG. 10(b), the second polishing head 10B presses the second polishing tape 2B against the third polishing point P3 and starts polishing the second polishing area. Next, with the second polishing head 10B pressing the second polishing tape 2B against the substrate W, the second polishing head tilting mechanism 50B moves the second polishing head 10B in the second direction D2 to the fourth polishing point P4. Tilt it. The second direction D2 is the same as the second direction D2 described with reference to FIG. 10(a).

Further, with the second polishing head 10B pressing the second polishing tape 2B against the substrate W, the second polishing head tilting mechanism 50B tilts the second polishing head 10B in the first direction D1 to the third polishing point P3. let The first direction D1 is the same as the first direction D1 described with reference to FIG. 10(a). Thereby, the second polishing head 10B reciprocates the second polishing area once. In one embodiment, the second polishing head 10B may be further tilted in the second direction D2 and the polishing operation shown in FIG. 10(b) may be repeated to polish the second polishing region back and forth a plurality of times. Alternatively, the second polishing area may be polished one way without tilting the second polishing head 10B in the first direction D1.

The first polishing head 10A and the second polishing head 10B simultaneously polish the first polishing area and the second polishing area of the bevel portion B. The timing at which the first polishing head 10A presses the first polishing tape 2A against the first polishing point P1 to start polishing the first polishing area, and the timing at which the second polishing head 10B presses the second polishing tape 2B against the third polishing point P3. The timing of pressing and starting polishing of the second polishing area may be simultaneous. The tilting speeds of the first polishing head 10A and the second polishing head 10B are equal, and the timing when the first polishing head 10A reaches the second polishing point P2 and the timing when the second polishing head 10B reaches the fourth polishing point P4 are different. , may be simultaneous. Further, the timing at which the first polishing head 10A and the second polishing head 10B turn back and the first polishing head 10A returns to the first polishing point P1 and the timing at which the second polishing head 10B returns to the third polishing point P3 are at the same time. It may be. Furthermore, at the end of polishing, the timing at which the pressing member 12 of the first polishing head 10A is separated from the substrate W and the timing at which the pressing member 12 of the second polishing head 10B is separated from the substrate W may be the same.

According to the present embodiment, the first polishing head 10A and the second polishing head 10B simultaneously polish the bevel portion B, so the overall polishing processing time is shorter than when polishing the bevel portion B with one polishing head. can be shortened.

Further, the first polishing point P1 where polishing is started by the first polishing head 10A and the third polishing point P3 where polishing is started by the second polishing head 10B are located on opposite sides in the bevel portion B, Since the first polishing head 10A and the second polishing head 10B polish the substrate W while tilting in the first direction D1 and the second direction D2, which are opposite directions, the pressing force by the first polishing head 10A and The pressing force by the second polishing head 10B is applied to the bevel portion B in the opposite direction. Therefore, as described with reference to FIG. 24, the pressing force by the first polishing head 10A and the second polishing head 10B is not excessively applied to the peripheral edge of the substrate W, and warpage of the substrate W is suppressed. be able to.

FIGS. 11(a) to 13(b) are diagrams showing other embodiments of the polishing operation of the first polishing head 10A and the second polishing head 10B. The configurations and operations of these embodiments, which are not particularly described, are the same as those of the embodiments described with reference to FIGS. 10(a) and 10(b), and thus redundant explanation thereof will be omitted.

In the embodiment described with reference to FIGS. 10(a) and 10(b), the first direction D1 is a direction from the upper side of the bevel part B to the lower side, and the second direction D2 is a direction from the upper side of the bevel part B to the lower side. The first direction D1 is the direction from the bottom to the top of the beveled portion B, but as shown in FIGS. 11(a) to 13(b), the first direction D1 is the direction from the top to the bottom of the beveled portion B and The second direction D2 may be either one of the directions from the bottom to the top of the beveled portion B, and the second direction D2 is the direction from the top to the bottom of the beveled portion B and the direction from the bottom to the top of the beveled portion B. It suffices if it is the other direction.

In the embodiment shown in FIGS. 11(a) and 11(b), the first polishing area polished by the first polishing head 10A is the bevel portion B, and the first polishing point P1 and the second polishing point P2 are: It is located inside the bevel part B. The first polishing point P1 is located lower in the bevel portion B than the second polishing point P2. The second polishing region polished by the second polishing head 10B is the bevel portion B, and the third polishing point P3 and the fourth polishing point P4 are within the bevel portion B. The third polishing point P3 is located above the fourth polishing point P4 in the bevel portion B. The first direction D1 is a direction from the lower side of the bevel portion B to the upper side. The second direction D2 is a direction from the upper side of the bevel portion B to the lower side.

In the embodiment shown in FIGS. 12(a) and 12(b), the first polishing region polished by the first polishing head 10A is the upper region of the bevel portion B, and the first polishing point P1 and the second The polishing point P2 is within the bevel portion B. The first polishing point P1 is located above the second polishing point P2 in the bevel portion B, and the second polishing point P2 is located in the center of the bevel portion B. The second polishing region polished by the second polishing head 10B is the lower region of the bevel portion B, and the third polishing point P3 and the fourth polishing point P4 are located within the bevel portion B. The third polishing point P3 is located lower in the bevel portion B than the fourth polishing point P4, and the fourth polishing point P4 is located in the center of the bevel portion B. The first direction D1 is a direction from the upper side of the bevel portion B to the lower side. The second direction D2 is a direction from the lower side of the bevel portion B to the upper side. In this way, the first polishing head 10A and the second polishing head 10B may polish different areas within the bevel portion B.

In the embodiment shown in FIGS. 13(a) and 13(b), the first polishing region polished by the first polishing head 10A is the lower region of the bevel portion B, and the first polishing point P1 and The second polishing point P2 is located within the bevel portion B. The first polishing point P1 is located lower in the bevel portion B than the second polishing point P2, and the second polishing point P2 is located in the center of the bevel portion B. The second polishing region polished by the second polishing head 10B is the upper region of the bevel portion B, and the third polishing point P3 and the fourth polishing point P4 are within the bevel portion B. The third polishing point P3 is located above the fourth polishing point P4 in the bevel portion B, and the fourth polishing point P4 is located in the center of the bevel portion B. The first direction D1 is a direction from the lower side of the bevel portion B to the upper side. The second direction D2 is a direction from the upper side of the bevel portion B to the lower side. In this way, the first polishing head 10A and the second polishing head 10B may polish different areas within the bevel portion B.

FIG. 14 is a plan view showing another embodiment of the polishing apparatus. The polishing apparatus of this embodiment includes a third polishing head 10C and a fourth polishing head 10D in addition to a first polishing head 10A and a second polishing head 10B. The configuration of the polishing apparatus of this embodiment, which is not particularly described, is the same as the configuration of the polishing apparatus described with reference to FIGS. 2 to 5, and therefore, the redundant explanation will be omitted.

The polishing apparatus of this embodiment includes a third polishing tape supply mechanism (not shown) that supplies the third polishing tape 2C to the third polishing head 10C and collects the third polishing tape 2C from the third polishing head 10C, and a fourth polishing tape 2D. A fourth polishing tape supply mechanism (not shown) that supplies the tape to and collects it from the fourth polishing head 10D, and a third polishing head translation mechanism (not shown) that serves as a third polishing head movable mechanism. and a third polishing head tilting mechanism (not shown), and a fourth polishing head translational movement mechanism (not shown) as a fourth polishing head moving mechanism and a fourth polishing head tilting mechanism (not shown). There is.

The third polishing head translation mechanism is configured to translate the third polishing head 10C along the radial direction of the substrate W. The fourth polishing head translation mechanism is configured to translate the fourth polishing head 10D along the radial direction of the substrate W. The third polishing head tilting mechanism is configured to tilt the third polishing head 10C with respect to the substrate holding surface of the holding stage 7. The fourth polishing head tilting mechanism is configured to tilt the fourth polishing head 10D with respect to the substrate holding surface of the holding stage 7.

The third polishing head 10C and the fourth polishing head 10D have basically the same configuration as the first polishing head 10A. The third polishing tape supply mechanism and the fourth polishing tape supply mechanism have basically the same configuration as the first polishing tape supply mechanism 20A. The third polishing head translation mechanism and the fourth polishing head translation mechanism basically have the same configuration as the first polishing head translation mechanism 40A. The third polishing head tilting mechanism and the fourth polishing head tilting mechanism basically have the same configuration as the first polishing head tilting mechanism 50A. Therefore, these redundant explanations will be omitted.

As shown in FIG. 14, an angle α1 formed by a line L1 connecting the first polishing head 10A and the center O1 of the substrate W and a line L2 connecting the second polishing head 10B and the center O1 of the substrate W is 0 degrees. It is within 90 degrees from. The angle α2 formed by the line L3 connecting the third polishing head 10C and the center O1 of the substrate W and the line L4 connecting the fourth polishing head 10D and the center O1 of the substrate W is within the range of 0 degrees to 90 degrees. be.

The first polishing head 10A and the fourth polishing head 10D are arranged symmetrically with respect to a line Lc passing through the center O1 of the substrate W and perpendicular to a predetermined rotation axis Cr. The second polishing head 10B and the third polishing head 10C are arranged symmetrically with respect to a line Lc passing through the center O1 of the substrate W and perpendicular to a predetermined rotation axis Cr. However, the positional relationship between the first polishing head 10A, the second polishing head 10B, the third polishing head 10C, and the fourth polishing head 10D is true as long as the angle α1 and the angle α2 are within the range of 0 degrees to 90 degrees. It is not limited to the embodiment.

FIGS. 15(a) to 15(d) are diagrams showing one embodiment of the polishing operation of the first polishing head 10A to the fourth polishing head 10D. In this embodiment, while the top edge portion E1 of the substrate W is polished by the first polishing head 10A and the fourth polishing head 10D, the bottom edge portion E2 of the substrate W is polished by the second polishing head 10B and the third polishing head 10C. do.

The polishing operations of the first polishing head 10A and the second polishing head 10B shown in FIGS. 15(a) and 15(b) are similar to those of the first polishing head described with reference to FIGS. 6(a) and 6(b). Since the polishing operation is the same as that of the polishing head 10A and the second polishing head 10B, a redundant explanation thereof will be omitted.

The third polishing region polished by the third polishing head 10C is an area between the fifth polishing point P5 and the sixth polishing point P6 in the bottom edge portion E2 of the substrate W. The fifth polishing point P5 is located further from the center O1 of the substrate W (that is, the predetermined rotation axis Cr) than the sixth polishing point P6. The fourth polishing region polished by the fourth polishing head 10D is an area between the seventh polishing point P7 and the eighth polishing point P8 within the top edge portion E1 of the substrate W. The seventh polishing point P7 is located closer to the center O1 of the substrate W (ie, the predetermined rotation axis Cr) than the eighth polishing point P8.

In this embodiment, the third polishing area polished by the third polishing head 10C and the fourth polishing area polished by the fourth polishing head 10D are located on opposite sides. That is, the fifth polishing point P5 and the sixth polishing point P6, which are both ends of the third polishing area, and the seventh polishing point P7, and the eighth polishing point P8, which are both ends of the fourth polishing area, are located on the opposite side. ing. The distance from the center O1 of the substrate W (i.e., the predetermined rotation axis Cr) of the fifth polishing point P5 and the distance from the center O1 of the substrate W (i.e., the predetermined rotation axis Cr) of the eighth polishing point P8 are equal. The distance from the center O1 of the substrate W (i.e., the predetermined rotation axis Cr) of the sixth polishing point P6 and the distance from the center O1 (i.e., the predetermined rotation axis Cr) of the substrate W of the seventh polishing point P7 are equal. That is, the lengths of the third polishing region and the fourth polishing region in the radial direction of the substrate W are equal.

As shown in FIG. 15(c), the third polishing head 10C presses the third polishing tape 2C against the fifth polishing point P5 and starts polishing the third polishing area. Next, with the third polishing tape 2C pressed against the substrate W by the third polishing head 10C, the third polishing head translation mechanism moves the third polishing head 10C in the third direction D3 to the sixth polishing point P6. move it. The third direction D3 is a direction approaching the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction approaching the predetermined rotation axis Cr.

Furthermore, with the third polishing tape 2C pressed against the substrate W by the third polishing head 10C, the third polishing head 10C is moved in the fourth direction D4 to the fifth polishing point P5 by the third polishing head translation mechanism. let The fourth direction D4 is a direction away from the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction away from the predetermined rotation axis Cr. The third direction D3 and the fourth direction D4 are opposite directions. Thereby, the third polishing head 10C reciprocates the third polishing area once. In one embodiment, the third polishing head 10C may be further moved in the third direction D3 and the polishing operation shown in FIG. 15(c) may be repeated to reciprocate and polish the third polishing region multiple times. Alternatively, the third polishing region may be polished one way without moving the third polishing head 10C in the fourth direction D4.

As shown in FIG. 15(d), the fourth polishing head 10D presses the fourth polishing tape 2D against the seventh polishing point P7 and starts polishing the fourth polishing area. Next, with the fourth polishing tape 2D pressed against the substrate W by the fourth polishing head 10D, the fourth polishing head translation mechanism moves the fourth polishing head 10D in the fourth direction D4 to the eighth polishing point P8. move it. The fourth direction D4 is the same as the fourth direction D4 described with reference to FIG. 15(c).

Further, with the fourth polishing head 10D pressing the fourth polishing tape 2D against the substrate W, the fourth polishing head translation mechanism moves the fourth polishing head 10D in the third direction D3 to the seventh polishing point P7. let The third direction D3 is the same as the third direction D3 described with reference to FIG. 15(c). Thereby, the fourth polishing head 10D reciprocates the fourth polishing region once. In one embodiment, the fourth polishing head 10D may be further moved in the fourth direction D4 and the polishing operation shown in FIG. 15(d) may be repeated to reciprocate and polish the fourth polishing region multiple times. Alternatively, the fourth polishing region may be polished one way without moving the fourth polishing head 10D in the third direction D3.

The first polishing area polished by the first polishing head 10A and the fourth polishing area polished by the fourth polishing head 10D substantially match, and the second polishing area polished by the second polishing head 10B The area and the third polishing area polished by the third polishing head 10C substantially match. Further, the first direction D1 and the fourth direction D4 substantially match, and the second direction D2 and the third direction D3 substantially match.

The first polishing head 10A to the fourth polishing head 10D simultaneously polish the first polishing region and fourth polishing region of the top edge portion E1, and the second polishing region and third polishing region of the bottom edge portion E2. The timing at which the first polishing head 10A presses the first polishing tape 2A against the first polishing point P1 to start polishing the first polishing area, and the timing at which the second polishing head 10B presses the second polishing tape 2B against the third polishing point P3. The timing at which the third polishing head 10C presses the third polishing tape 2C to start polishing the second polishing area, the timing at which the third polishing head 10C presses the third polishing tape 2C against the fifth polishing point P5 and starts polishing the third polishing area, and the fourth polishing head The timing at which the polishing tape 10D presses the fourth polishing tape 2D against the seventh polishing point P7 and starts polishing the fourth polishing area may be at the same time.

The moving speeds of the first polishing head 10A, the second polishing head 10B, the third polishing head 10C, and the fourth polishing head 10D are equal, and the timing at which the first polishing head 10A reaches the second polishing point P2 and the timing at which the second polishing The timing at which the head 10B reaches the fourth polishing point P4, the timing at which the third polishing head 10C reaches the sixth polishing point P6, and the timing at which the fourth polishing head 10D reaches the eighth polishing point P8 are simultaneous. There may be. Furthermore, the timing at which the first polishing head 10A, the second polishing head 10B, the third polishing head 10C, and the fourth polishing head 10D turn back and the first polishing head 10A returns to the first polishing point P1, and the timing at which the second polishing head The timing at which the polishing head 10B returns to the third polishing point P3, the timing at which the third polishing head 10C returns to the fifth polishing point P5, and the timing at which the fourth polishing head 10D returns to the seventh polishing point P7 may be the same. . Further, at the end of polishing, the timing of separating the pressing member 12 of the first polishing head 10A from the substrate W, the timing of separating the pressing member 12 of the second polishing head 10B from the substrate W, and the pressing member of the third polishing head 10C are further determined. The timing at which the polishing head 12 is separated from the substrate W and the timing at which the pressing member 12 of the fourth polishing head 10D is separated from the substrate W may be the same.

According to the present embodiment, the first polishing head 10A and the fourth polishing head 10D simultaneously polish the top edge portion E1, and the second polishing head 10B and the third polishing head 10C simultaneously polish the bottom edge portion E2. In comparison with the case where the top edge portion E1 and the bottom edge portion E2 are polished using two polishing heads, the first polishing head 10A and the second polishing head 10B, as described with reference to FIGS. 6(a) to 9(b). As a result, the overall polishing processing time can be further shortened.

Further, the third polishing region and the fourth polishing region are located on opposite sides, and the third polishing head 10C and the fourth polishing head 10D are arranged in the third direction D3 and the fourth direction, which are opposite directions. Since the substrate W is polished while moving in the direction D4, the pressing force by the third polishing head 10C and the pressing force by the fourth polishing head 10D are applied in opposite directions. Therefore, similar to the pressing force by the first polishing head 10A and the second polishing head 10B, the pressing force by the third polishing head 10C and the fourth polishing head 10D is not excessively applied to the peripheral edge of the substrate W. Warpage of the substrate W can be suppressed.

Furthermore, according to the present embodiment, similarly to the first polishing head 10A and the second polishing head 10B, the third polishing head 10C and the fourth polishing head 10D are arranged in the third direction D3 and the third direction D3, which are opposite directions. In order to polish the substrate W while moving in the direction D4 of FIG. It is possible to prevent W from moving together with the third polishing head 10C and the fourth polishing head 10D and being misaligned with respect to the substrate holder 5.

When simultaneously polishing the top edge portion E1 and the bottom edge portion E2 of the substrate W with four polishing heads 10A to 4th polishing head 10D, the adjacent first polishing head 10A and second polishing head 10B polish As for the operation, the four patterns of polishing operation of the first polishing head 10A and the second polishing head 10B described with reference to FIGS. 6(a) to 9(b) can be applied. Further, the polishing operations of the adjacent third polishing head 10C and fourth polishing head 10D are as follows: A patterned polishing operation can be applied.

FIGS. 16(a) to 18(d) are diagrams showing an example of another embodiment of the polishing operation of the first polishing head 10A to fourth polishing head 10D. The configuration and operation of these embodiments, which are not particularly described, are the same as those of the embodiment described with reference to FIG. The polishing operation of the first polishing head 10A shown in FIGS. 16(a), 17(a), and 18(a) is the same as the polishing operation of the first polishing head 10A shown in FIG. 6(a), The polishing operation of the second polishing head 10B shown in FIG. 16(b), FIG. 17(b), and FIG. 18(b) is the same as the polishing operation of the second polishing head 10B shown in FIG. 6(b). , the redundant explanation will be omitted.

In the embodiment shown in FIGS. 16(a) to 16(d), the third polishing area polished by the third polishing head 10C is the bottom edge portion E2, and the fifth polishing point P5 and the sixth polishing point P6 are , within the bottom edge portion E2. The fifth polishing point P5 is located closer to the center O1 of the substrate W (ie, the predetermined rotational axis Cr) than the sixth polishing point P6. The fourth polishing region polished by the fourth polishing head 10D is the top edge portion E1, and the seventh polishing point P7 and the eighth polishing point P8 are located within the top edge portion E1. The seventh polishing point P7 is located further from the center O1 of the substrate W (ie, the predetermined rotation axis Cr) than the eighth polishing point P8. The third direction D3 is a direction away from the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction away from the predetermined rotation axis Cr. The fourth direction D4 is a direction approaching the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction approaching the predetermined rotation axis Cr.

The first polishing area polished by the first polishing head 10A and the fourth polishing area polished by the fourth polishing head 10D substantially match, and the second polishing area polished by the second polishing head 10B The area and the third polishing area polished by the third polishing head 10C substantially coincide with each other. Further, the first direction D1 and the third direction D3 substantially match, and the second direction D2 and the fourth direction D4 substantially match.

In the embodiment shown in FIGS. 17(a) to 17(d), the third polishing region polished by the third polishing head 10C is the top edge portion E1, and the fifth polishing point P5 and the sixth polishing point P6 are , within the top edge portion E1. The fifth polishing point P5 is located closer to the center O1 of the substrate W (ie, the predetermined rotational axis Cr) than the sixth polishing point P6. The fourth polishing region polished by the fourth polishing head 10D is the bottom edge portion E2, and the seventh polishing point P7 and the eighth polishing point P8 are located within the bottom edge portion E2. The seventh polishing point P7 is located further from the center O1 of the substrate W (ie, the predetermined rotation axis Cr) than the eighth polishing point P8. The third direction D3 is a direction away from the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction away from the predetermined rotation axis Cr. The fourth direction D4 is a direction approaching the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction approaching the predetermined rotation axis Cr.

The first polishing area polished by the first polishing head 10A and the third polishing area polished by the third polishing head 10C substantially match, and the second polishing area polished by the second polishing head 10B The area and the fourth polishing area polished by the fourth polishing head 10D substantially match. Further, the first direction D1 and the third direction D3 substantially match, and the second direction D2 and the fourth direction D4 substantially match.

In the embodiment shown in FIGS. 18(a) to 18(d), the third polishing region polished by the third polishing head 10C is the top edge portion E1, and the fifth polishing point P5 and the sixth polishing point P6 are , within the top edge portion E1. The fifth polishing point P5 is located further from the center O1 of the substrate W (that is, the predetermined rotation axis Cr) than the sixth polishing point P6. The fourth polishing region polished by the fourth polishing head 10D is the bottom edge portion E2, and the seventh polishing point P7 and the eighth polishing point P8 are located within the bottom edge portion E2. The seventh polishing point P7 is located closer to the center O1 of the substrate W (ie, the predetermined rotation axis Cr) than the eighth polishing point P8. The third direction D3 is a direction approaching the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction approaching the predetermined rotation axis Cr. The fourth direction D4 is a direction away from the center O1 of the substrate W in the radial direction of the substrate W, that is, a direction away from the predetermined rotation axis Cr.

The first polishing area polished by the first polishing head 10A and the third polishing area polished by the third polishing head 10C substantially match, and the second polishing area polished by the second polishing head 10B The area and the fourth polishing area polished by the fourth polishing head 10D substantially match. Further, the first direction D1 and the fourth direction D4 substantially match, and the second direction D2 and the third direction D3 substantially match.

Next, regarding the polishing operations of the first polishing head 10A to fourth polishing head 10D when simultaneously polishing the bevel portion B of the substrate W using four polishing heads, first polishing head 10A to fourth polishing head 10D. explain. 19(a) to 19(d) are diagrams showing one embodiment of the polishing operation of the first polishing head 10A to the fourth polishing head 10D when polishing the bevel portion B of the substrate W. In this embodiment, the bevel portion B of the substrate W is simultaneously polished by the first polishing head 10A to the fourth polishing head 10D. The polishing operation of the first polishing head 10A and the second polishing head 10B shown in FIGS. 19(a) and 19(b) is similar to that of the first polishing head 10A and the second polishing head 10B shown in FIGS. Since the polishing operation is the same as that of the polishing head 10A and the second polishing head 10B, a redundant explanation thereof will be omitted.

The third polishing region polished by the third polishing head 10C is an area between the fifth polishing point P5 and the sixth polishing point P6 in the bevel portion B of the substrate W. The fifth polishing point P5 is located lower in the bevel portion B than the sixth polishing point P6. The fourth polishing region polished by the fourth polishing head 10D is an area between the seventh polishing point P7 and the eighth polishing point P8 in the bevel portion B of the substrate W. The seventh polishing point P7 is located above the eighth polishing point P8 in the bevel portion B.

In this embodiment, the third polishing area polished by the third polishing head 10C and the fourth polishing area polished by the fourth polishing head 10D substantially match. That is, the fifth polishing point P5 and the eighth polishing point P8 substantially match, and the sixth polishing point P6 and the seventh polishing point P7 substantially match. The fifth polishing point P5 is one of both ends of the third polishing area where polishing is started by the third polishing head 10C, and the fifth polishing point P5 is one of both ends of the fourth polishing area where polishing is started by the fourth polishing head 10D. The seventh polishing point P7, which is one end, is located on the opposite side of the bevel portion B. Further, the sixth polishing point P6, which is the other end of the third polishing region, and the eighth polishing point P8, which is the other end of the fourth polishing region, are located on opposite sides of the bevel portion B. positioned.

As shown in FIG. 19(c), the third polishing head 10C presses the third polishing tape 2C against the fifth polishing point P5 and starts polishing the third polishing area. Next, with the third polishing head 10C pressing the third polishing tape 2C against the substrate W, the third polishing head tilting mechanism tilts the third polishing head 10C in the third direction D3 to the sixth polishing point P6. let The third direction D3 is a direction from the lower side of the bevel portion B to the upper side.

Further, with the third polishing head 10C pressing the third polishing tape 2C against the substrate W, the third polishing head tilting mechanism tilts the third polishing head 10C in the fourth direction D4 to the fifth polishing point P5. . The fourth direction D4 is a direction from the upper side of the bevel portion B to the lower side. The third direction D3 and the fourth direction D4 are opposite directions. Thereby, the third polishing head 10C reciprocates the third polishing area once. In one embodiment, the third polishing head 10C may be further tilted in the third direction D3 and the polishing operation shown in FIG. 19(c) may be repeated to reciprocate and polish the third polishing region multiple times. Alternatively, the third polishing area may be polished one way without tilting the third polishing head 10C in the fourth direction D4.

As shown in FIG. 19(d), the fourth polishing head 10D presses the fourth polishing tape 2D against the seventh polishing point P7 and starts polishing the fourth polishing area. Next, with the fourth polishing head 10D pressing the fourth polishing tape 2D against the substrate W, the fourth polishing head tilting mechanism tilts the fourth polishing head 10D in the fourth direction D4 to the eighth polishing point P8. let The fourth direction D4 is the same as the fourth direction D4 described with reference to FIG. 19(c).

Further, with the fourth polishing tape 2D pressed against the substrate W by the fourth polishing head 10D, the fourth polishing head tilting mechanism tilts the fourth polishing head 10D in the third direction D3 to the seventh polishing point P7. . The third direction D3 is the same as the third direction D3 described with reference to FIG. 19(c). Thereby, the fourth polishing head 10D reciprocates the fourth polishing region once. In one embodiment, the fourth polishing head 10D may be further tilted in the fourth direction D4 and the polishing operation shown in FIG. 19(d) may be repeated to reciprocate and polish the fourth polishing region multiple times. Alternatively, the fourth polishing area may be polished one way without tilting the fourth polishing head 10D in the third direction D3.

A first polishing area polished by the first polishing head 10A, a second polishing area polished by the second polishing head 10B, a third polishing area polished by the third polishing head 10C, and a fourth polishing head 10D. The fourth polishing area polished by is substantially coincident. Further, the first direction D1 and the fourth direction D4 substantially match, and the second direction D2 and the third direction D3 substantially match.

The first polishing head 10A to the fourth polishing head 10D simultaneously polish the first polishing region to the fourth polishing region of the bevel portion B. The timing at which the first polishing head 10A presses the first polishing tape 2A against the first polishing point P1 to start polishing the first polishing area, and the timing at which the second polishing head 10B presses the second polishing tape 2B against the third polishing point P3. The timing at which the third polishing head 10C presses the third polishing tape 2C to start polishing the second polishing area, the timing at which the third polishing head 10C presses the third polishing tape 2C against the fifth polishing point P5 and starts polishing the third polishing area, and the fourth polishing head The timing at which the polishing tape 10D presses the fourth polishing tape 2D against the seventh polishing point P7 and starts polishing the fourth polishing area may be at the same time.

The tilting speeds of the first polishing head 10A, the second polishing head 10B, the third polishing head 10C, and the fourth polishing head 10D are equal, and the timing at which the first polishing head 10A reaches the second polishing point P2 and the timing at which the second polishing The timing at which the head 10B reaches the fourth polishing point P4, the timing at which the third polishing head 10C reaches the sixth polishing point P6, and the timing at which the fourth polishing head 10D reaches the eighth polishing point P8 are simultaneous. There may be. Furthermore, the timing at which the first polishing head 10A, the second polishing head 10B, the third polishing head 10C, and the fourth polishing head 10D turn back and the first polishing head 10A returns to the first polishing point P1, and the timing at which the second polishing head The timing at which the polishing head 10B returns to the third polishing point P3, the timing at which the third polishing head 10C returns to the fifth polishing point P5, and the timing at which the fourth polishing head 10D returns to the seventh polishing point P7 may be the same. . Further, at the end of polishing, the timing of separating the pressing member 12 of the first polishing head 10A from the substrate W, the timing of separating the pressing member 12 of the second polishing head 10B from the substrate W, and the pressing member of the third polishing head 10C are further determined. The timing at which the polishing head 12 is separated from the substrate W and the timing at which the pressing member 12 of the fourth polishing head 10D is separated from the substrate W may be the same.

According to this embodiment, the first polishing head 10A to the fourth polishing head 10D simultaneously polish the bevel portion B, so the first polishing head 10A described with reference to FIGS. 10(a) to 11(b) Compared to the case where the bevel portion B is polished using two polishing heads, ie, the second polishing head 10B and the second polishing head 10B, the overall polishing processing time can be further shortened.

Further, the fifth polishing point P5 where polishing is started by the third polishing head 10C and the seventh polishing point P7 where polishing is started by the fourth polishing head 10D are located on opposite sides in the bevel portion B, Since the third polishing head 10C and the fourth polishing head 10C polish the substrate W while tilting in the third direction D3 and the fourth direction D4, which are opposite directions, the pressing force by the third polishing head 10C and The pressing force by the fourth polishing head 10D is applied to the bevel portion B in the opposite direction. Therefore, similarly to the pressing force by the first polishing head 10A and the second polishing head 10B, the pressing force by the third polishing head 10C and the fourth polishing head 10D is not excessively applied to the peripheral edge of the substrate W. Therefore, warping of the substrate W can be suppressed.

When simultaneously polishing the bevel portion B of the substrate W with four polishing heads 10A to 4th polishing head 10D, the polishing operations of the adjacent first polishing head 10A and second polishing head 10B are as shown in FIG. The four patterns of polishing operations of the first polishing head 10A and the second polishing head 10B described with reference to a) to FIG. 13(b) can be applied. Further, the polishing operations of the adjacent third polishing head 10C and fourth polishing head 10D are as follows: A patterned polishing operation can be applied.

FIGS. 20(a) to 22(d) are diagrams showing an example of another embodiment of the polishing operation of such first polishing head 10A to fourth polishing head 10D. The configurations and operations of these embodiments, which are not particularly described, are the same as those of the embodiments described with reference to FIGS. 19(a) to 19(d), and thus redundant explanations thereof will be omitted.

The polishing operations of the first polishing head 10A and the second polishing head 10B shown in FIGS. 20(a) and 20(b) are similar to those of the first polishing head described with reference to FIGS. 10(a) and 10(b). Since the polishing operation is the same as that of the polishing head 10A and the second polishing head 10B, a redundant explanation thereof will be omitted. In the embodiment shown in FIGS. 20(a) to 20(d), the third polishing region polished by the third polishing head 10C is the bevel portion B, and the fifth polishing point P5 and the sixth polishing point P6 are It is located inside the bevel part B. The fifth polishing point P5 is located above the sixth polishing point P6 in the bevel portion B. The fourth polishing region polished by the fourth polishing head 10D is the bevel portion B, and the seventh polishing point P7 and the eighth polishing point P8 are within the bevel portion B. The seventh polishing point P7 is located lower in the bevel portion B than the eighth polishing point P8. The third direction D3 is a direction from the upper side of the bevel portion B to the lower side. The fourth direction D4 is a direction from the lower side of the bevel portion B to the upper side.

A first polishing area polished by the first polishing head 10A, a second polishing area polished by the second polishing head 10B, a third polishing area polished by the third polishing head 10C, and a fourth polishing head 10D. The fourth polishing area polished by the fourth polishing region is substantially coincident. Further, the first direction D1 and the third direction D3 substantially match, and the second direction D2 and the fourth direction D4 substantially match.

The polishing operation of the first polishing head 10A shown in FIGS. 21(a) and 22(a) and the polishing operation of the second polishing head 10B shown in FIGS. 21(b) and 22(b) are as shown in FIG. 12(a). ), and the polishing operation of the second polishing head 10B described with reference to FIG.

In the embodiment shown in FIGS. 21(a) to 21(d), the third polishing region polished by the third polishing head 10C is the lower region of the bevel portion B, and the fifth polishing point P5 and Six polishing points P6 are located within the bevel portion B. The fifth polishing point P5 is located lower in the bevel portion B than the sixth polishing point P6, and the sixth polishing point P6 is located in the center of the bevel portion B. The fourth polishing region polished by the fourth polishing head 10D is the upper region of the bevel portion B, and the seventh polishing point P7 and the eighth polishing point P8 are within the bevel portion B. The seventh polishing point P7 is located above the eighth polishing point P8 in the bevel portion B, and the eighth polishing point P8 is located in the center of the bevel portion B. The third direction D3 is a direction from the lower side of the bevel portion B to the upper side. The fourth direction D4 is a direction from the upper side of the bevel portion B to the lower side.

The first polishing area polished by the first polishing head 10A and the fourth polishing area polished by the fourth polishing head 10D substantially match, and the second polishing area polished by the second polishing head 10B The area and the third polishing area polished by the third polishing head 10C substantially match. Further, the first direction D1 and the fourth direction D4 substantially match, and the second direction D2 and the third direction D3 substantially match.

In the embodiment shown in FIGS. 22(a) to 22(d), the third polishing region polished by the third polishing head 10C is the upper region of the bevel portion B, and the fifth polishing point P5 and the sixth polishing point The polishing point P6 is within the bevel portion B. The fifth polishing point P5 is located above the sixth polishing point P6 in the bevel portion B, and the sixth polishing point P6 is located in the center of the bevel portion B. The fourth polishing region polished by the fourth polishing head 10D is the lower region of the bevel portion B, and the seventh polishing point P7 and the eighth polishing point P8 are within the bevel portion B. The seventh polishing point P7 is located lower in the bevel portion B than the eighth polishing point P8, and the eighth polishing point P8 is located in the center of the bevel portion B. The third direction D3 is a direction from the upper side of the bevel portion B to the lower side. The fourth direction D4 is a direction from the lower side of the bevel portion B to the upper side.

The first polishing area polished by the first polishing head 10A and the third polishing area polished by the third polishing head 10C substantially match, and the second polishing area polished by the second polishing head 10B The area and the fourth polishing area polished by the fourth polishing head 10D substantially match. Further, the first direction D1 and the third direction D3 substantially match, and the second direction D2 and the fourth direction D4 substantially match.

The polishing operations of the first polishing head 10A to fourth polishing head 10D described with reference to FIGS. 15(a) to 22(d) are merely examples, and in one embodiment, the first polishing head 10A and the second The head 10B applies the polishing operations of the first polishing head 10A and the second polishing head 10B described with reference to FIGS. 6(a) to 9(b) to polish the top edge portion E1 and bottom edge of the substrate W. While simultaneously polishing the portion E2, the third polishing head 10C and the fourth polishing head 10D perform the polishing of the first polishing head 10A and the second polishing head 10B described with reference to FIGS. 10(a) to 13(b). The polishing operation may be applied to simultaneously polish the bevel portion B of the substrate W. In this way, the first polishing head 10A to the fourth polishing head 10D can perform the polishing operations shown in FIGS. 6(a) to 13(b) in combination.

FIGS. 23(a) and 23(b) are diagrams for explaining yet another embodiment in which the peripheral edge of the substrate W is polished using four polishing heads. The configuration of the polishing apparatus of this embodiment, which is not particularly described, is the same as the configuration of the polishing apparatus described with reference to FIG. 14, and therefore, the redundant explanation will be omitted. In this embodiment, after the first polishing head 10A and the second polishing head 10B among the first polishing head 10A to the fourth polishing head 10D simultaneously polish the peripheral portion of the substrate W, the other third polishing head 10C and The peripheral edge of the substrate W is simultaneously polished by the fourth polishing head 10D.

FIG. 23(a) shows the peripheral edge of the substrate W being polished by the first polishing head 10A and the second polishing head 10B. The first polishing head 10A is arranged at a position where it can polish the top edge part E1 of the substrate W, and the second polishing head 10B is arranged at a position where it can polish the bottom edge part E2 of the substrate W. ing. The third polishing head 10C and the fourth polishing head 10D are arranged at non-polishing positions outside the substrate W in the radial direction.

The first polishing tape 2A supplied to the first polishing head 10A and the second polishing tape 2B supplied to the second polishing head 10B have coarse abrasive grains on their polishing surfaces. The first polishing head 10A and the second polishing head 10B simultaneously roughly polish a first polishing region within the top edge portion E1 of the substrate W and a second polishing region within the bottom edge portion E2 of the substrate W, respectively. The polishing operation of the first polishing head 10A and the second polishing head 10B is the same as the polishing operation of the first polishing head 10A and the second polishing head 10B described with reference to FIGS. 6(a) and 6(b). Since there are many, the redundant explanation will be omitted.

Thereafter, as shown in FIG. 23(b), the first polishing head 10A and the second polishing head 10B are placed at a non-polishing position outside the substrate W in the radial direction. The third polishing head 10C is arranged at a position where it can polish the bottom edge part E2 of the substrate W, and the fourth polishing head 10D is arranged at a position where it can polish the top edge part E1 of the substrate W. . The third polishing tape 2C supplied to the third polishing head 10C and the fourth polishing tape 2D supplied to the fourth polishing head 10D have fine abrasive grains on their polishing surfaces.

The third polishing head 10C and the fourth polishing head 10D simultaneously finish polish a third polishing area within the bottom edge portion E2 of the substrate W and a fourth polishing area within the top edge portion E1 of the substrate W, respectively. The polishing operations of the third polishing head 10C and the fourth polishing head 10D are the same as the polishing operations of the first polishing head 10A and the second polishing head 10B described with reference to FIGS. 8(a) and 8(b). Since there are many, the redundant explanation will be omitted. The third polishing head 10C polishes the second polishing region that has already been polished by the second polishing head 10B. That is, the third polishing area and the second polishing area are the same area. The fourth polishing head 10D polishes the first polishing region that has already been polished by the first polishing head 10A. That is, the fourth polishing area and the first polishing area are the same area.

According to this embodiment, after rough polishing the first polishing region of the top edge portion E1 and the second polishing region of the bottom edge portion E2 by the two polishing heads, the first polishing head 10A and the second polishing head 10B, Immediately, two polishing heads, the third polishing head 10C and the fourth polishing head 10D, polish the first polishing area (fourth polishing area) of the top edge portion E1 and the second polishing area (third polishing area) of the bottom edge portion E2. ) for final polishing. Therefore, compared to the case where the top edge portion E1 and the bottom edge portion E2 are polished with one polishing head, the overall polishing processing time can be shortened. Furthermore, since it is not necessary to change the polishing tape having coarse abrasive grains for rough polishing to the polishing tape having fine abrasive grains for final polishing, the overall polishing processing time can be shortened.

Further, the first polishing region and the second polishing region are located on opposite sides, and the first polishing head 10A and the second polishing head 10B are arranged in the first direction D1 and the second direction D1, which are opposite directions. Since the substrate W is polished while moving in the direction D2, the pressing force by the first polishing head 10A and the pressing force by the second polishing head 10B are applied in opposite directions. Therefore, as described with reference to FIG. 24, the pressing force by the first polishing head 10A and the second polishing head 10B is not excessively applied to the peripheral edge of the substrate W, and warpage of the substrate W is suppressed. be able to. Similar effects can be obtained when the third polishing area and the fourth polishing area are polished by the third polishing head 10C and the fourth polishing head 10D.

Furthermore, according to the present embodiment, the first polishing head 10A and the second polishing head 10B polish the substrate W while moving in the first direction D1 and the second direction D2, which are opposite directions. When moving the first polishing head 10A and the second polishing head 10B by pressing them from both sides of the top edge and bottom edge of the substrate W, the substrate W moves together with the first polishing head 10A and the second polishing head 10B. As a result, positional displacement with respect to the substrate holder 5 can be prevented. Similar effects can be obtained when the third polishing area and the fourth polishing area are polished by the third polishing head 10C and the fourth polishing head 10D.

The polishing operations of the first polishing head 10A and the second polishing head 10B and the polishing operations of the third polishing head 10C and the fourth polishing head 10D are not limited to this embodiment, and are shown in FIGS. 6(a) to 9(b). Any pattern of the polishing operation for the top edge portion E1 and the bottom edge portion E2 described with reference to FIG. In another embodiment, the polishing operation of the first polishing head 10A and the second polishing head 10B and the polishing operation of the third polishing head 10C and the fourth polishing head 10D are also performed when polishing the bevel portion B of the substrate W. Can be applied. For example, the polishing operation of the first polishing head 10A and the second polishing head 10B, and the polishing operation of the third polishing head 10C and the fourth polishing head 10D will be described with reference to FIGS. 10(a) and 10(b). The polishing operation of the bevel portion B may also be performed.

The polishing apparatus according to the embodiment described above may include six or more polishing heads including two or more polishing heads in addition to the first polishing head 10A to the fourth polishing head 10D.

The embodiments described above have been described to enable those skilled in the art to carry out the invention. Various modifications of the above embodiments can be naturally made by those skilled in the art, and the technical idea of the present invention can be applied to other embodiments. Therefore, the invention is not limited to the described embodiments, but is to be construed in the broadest scope according to the spirit defined by the claims.

2A First polishing tape 2B Second polishing tape 2C Third polishing tape 2D Fourth polishing tape 5 Substrate holder 7 Holding stage 8 Shaft 9 Holding stage drive mechanism 10A First polishing head 10B Second polishing head 10C Third polishing head 10D Fourth polishing head 12 Pressing member 15 Air cylinder (drive mechanism)
18 Polishing head support member 20A First polishing tape supply mechanism 20B First polishing tape supply mechanism 21 Tape unwinding reel 22 Tape take-up reel 24, 25, 26, 27 Guide roller 28 Reel base 31 Lower supply nozzle 32 Upper supply nozzle 40A First polishing head translational movement mechanism 40B Second polishing head translational movement mechanism 41 Movable plate 43 Connection member 44 Guide rail 46 Connection shaft 47 Air cylinder (drive mechanism)
48 Base plate 50A First polishing head tilting mechanism 50B Second polishing head tilting mechanism 52 Crank arm 53 Arm rotation device 80 Operation control section 80a Storage device 80b Arithmetic device

Claims (14)

A method for polishing a peripheral portion of a substrate, the method comprising:
holding the substrate by a substrate holder and rotating the substrate;
With the first polishing head pressing the first polishing tape against the peripheral edge, the first polishing head is moved or tilted in a first direction to polish the first polishing area of the peripheral edge, while the second polishing tape is pressed against the peripheral edge. Polishing a second polishing area of the peripheral edge by moving or tilting the second polishing head in a second direction while pressing a second polishing tape against the peripheral edge with the polishing head,
The polishing method, wherein the first direction and the second direction are opposite directions. The first polishing region is one of a top edge portion and a bottom edge portion of the peripheral edge portion,
The second polishing region is the other of the top edge portion and the bottom edge portion of the peripheral edge portion,
The first direction is either a direction approaching the center of the substrate or a direction away from the center of the substrate in the radial direction of the substrate,
The polishing method according to claim 1, wherein the second direction is the other of a direction toward the center of the substrate and a direction away from the center of the substrate in the radial direction of the substrate. The polishing method according to claim 2, wherein the moving speed of the first polishing head and the moving speed of the second polishing head are equal. The first polishing region and the second polishing region are beveled portions of the peripheral edge,
The first direction is either a direction from the upper side of the bevel portion to the lower side or a direction from the lower side of the bevel portion to the upper side,
The polishing method according to claim 1, wherein the second direction is the other of a direction from the upper side of the bevel portion to a lower side and a direction from a lower side to the upper side of the bevel portion. 5. The polishing method according to claim 4, wherein the tilting speed of the first polishing head and the tilting speed of the second polishing head are equal. Claim 1: An angle between a line connecting the first polishing head and the center of the substrate and a line connecting the second polishing head and the center of the substrate is within a range of 0 degrees to 90 degrees. 6. The polishing method according to any one of items 5 to 5. When polishing the first polishing area, after moving or tilting the first polishing head in the first direction, the first polishing head is further moved or tilted in the second direction to polish the first polishing area. reciprocating polishing one polishing area at least once;
When polishing the second polishing area, after moving or tilting the second polishing head in the second direction, the second polishing head is further moved or tilted in the first direction to polish the second polishing area. The polishing method according to any one of claims 1 to 6, wherein the two polishing regions are polished back and forth at least once. A polishing device for a peripheral edge of a substrate,
a substrate holder that holds the substrate and rotates the substrate around a predetermined rotation axis;
a first polishing head that presses a first polishing tape against the peripheral edge;
a second polishing head that presses a second polishing tape against the peripheral edge;
a first polishing head moving mechanism that moves or tilts the first polishing head;
a second polishing head moving mechanism that moves or tilts the second polishing head;
comprising an operation control unit that controls the operation of the polishing device,
The operation control unit moves or tilts the first polishing head in a first direction using the first polishing head moving mechanism while the first polishing head presses the first polishing tape against the peripheral edge. Then, while polishing the first polishing area of the peripheral edge, the second polishing head is moved by the second polishing head movable mechanism while pressing the second polishing tape against the peripheral edge with the second polishing head. configured to move or tilt in a second direction to polish a second polishing area of the peripheral edge;
The polishing apparatus, wherein the first direction and the second direction are opposite directions. The first polishing head moving mechanism is a first polishing head translational movement mechanism that translates the first polishing head,
The second polishing head moving mechanism is a second polishing head translational movement mechanism that translates the second polishing head,
The first polishing region is one of a top edge portion and a bottom edge portion of the peripheral edge portion,
The second polishing region is the other of the top edge portion and the bottom edge portion of the peripheral edge portion,
The first direction is either a direction approaching the predetermined rotation axis or a direction away from the predetermined rotation axis,
The polishing device according to claim 8, wherein the second direction is the other of a direction approaching the predetermined rotation axis and a direction away from the predetermined rotation axis. The polishing apparatus according to claim 9, wherein the moving speed of the first polishing head and the moving speed of the second polishing head are equal. The first polishing head movable mechanism is a first polishing head tilting mechanism that tilts the first polishing head,
The second polishing head movable mechanism is a second polishing head tilting mechanism that tilts the second polishing head,
The first polishing region and the second polishing region are beveled portions of the peripheral edge,
The first direction is either a direction from the upper side of the bevel portion to the lower side or a direction from the lower side of the bevel portion to the upper side,
The polishing apparatus according to claim 8, wherein the second direction is the other of a direction from the upper side of the bevel part to a lower side and a direction from the lower side to the upper side of the bevel part. The polishing apparatus according to claim 11, wherein the tilting speed of the first polishing head and the tilting speed of the second polishing head are equal. 8. An angle between a line connecting the first polishing head and the center of the substrate and a line connecting the second polishing head and the center of the substrate is within a range of 0 degrees to 90 degrees. 13. The polishing apparatus according to any one of 12 to 12. The operation control unit issues a command to the first polishing head movable mechanism to move or tilt the first polishing head in the first direction, and then further moves the first polishing head in the second direction. After moving or tilting the first polishing area to reciprocate at least once, and issuing a command to the second polishing head movable mechanism to move or tilt the second polishing head in the second direction. , wherein the second polishing head is further moved or tilted in the first direction to reciprocate and polish the second polishing area at least once. The polishing device described.

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