JP2023133730A - Semiconductor light-emitting device - Google Patents

Abstract

To provide a semiconductor light-emitting device which has a resin part that prevents climbing up of the semiconductor light-emitting device to an upper surface, covers the whole element side face and has a smooth curved surface, and can obtain emission light having good light distribution characteristics with high efficiency.SOLUTION: A semiconductor light-emitting device has: a plurality of plate-like leads; a frame body 12 which is formed integrally with the plurality of leads and has a first opening to which the plurality of leads are exposed; a semiconductor light-emitting element 31 which is mounted on the leads exposed from the first opening; and resin parts 21 which cover the side face of the semiconductor light-emitting element. The frame body has a step part 12D which is separated at an interval from the semiconductor light-emitting element, and is provided on the bottom part of the first opening so as to surround the semiconductor light-emitting element, and an inclined surface 12R having an opening surface expanding in a light-emitting direction of the semiconductor light-emitting element from the step part, and the resin part is made to fill a space between the side face of the semiconductor light-emitting element and the side face of the step part.SELECTED DRAWING: Figure 2

Description

The present invention relates to a semiconductor light emitting device, and particularly to a semiconductor light emitting device in which a semiconductor light emitting element such as a light emitting diode (LED) is mounted on a lead frame.

2. Description of the Related Art Conventionally, a light emitting device is known in which a resin body is provided on a lead frame by insert molding and then cut with a dicer. Generally, in such a light emitting device, a recess of a resin body is filled with resin, and a light emitting element placed on the bottom of the recess is sealed.

For example, Patent Document 1 describes a light emitting element placed on the bottom surface of a recessed part of a package, a first reflective layer covering the side surfaces of the recessed part, a first reflective layer in contact with the side surfaces of the light emitting element and the first reflective layer, and a first reflective layer covering the side surfaces of the recessed part. A light-emitting device is disclosed that includes a second reflective layer that covers the entire bottom surface of the recess that is exposed from the second reflective layer, and a light-transmitting layer that is disposed on the second reflective layer and the light-emitting element.

Japanese Patent Application Publication No. 2010-62272

However, when covering the side surface of the element with resin in order to block the light emitted from the side surface of the light emitting element placed in the recess of the package, there are inconveniences such as the resin creeping up to the top surface, which is the light emitting surface of the element. There is a problem in that resin injection is difficult to control when forming a curved surface with the resin. In particular, when the depth of the recess is deep, there is a problem in that it is difficult to inject resin with good controllability.

The present invention has been made in view of the above points, and has a resin portion that does not creep up onto the top surface of a semiconductor light emitting device, covers the entire side surface of the device, and has a smooth curved surface, thereby increasing efficiency. It is an object of the present invention to provide a semiconductor light emitting device that can obtain emitted light with high and favorable light distribution characteristics.

A light emitting device according to an embodiment of the present invention includes:
Multiple plate-shaped leads,
a frame that is integrally formed with the plurality of leads and has a first opening through which the plurality of leads are exposed;
a semiconductor light emitting element mounted on the lead exposed from the first opening;
a resin part that covers a side surface of the semiconductor light emitting element,
The frame body is spaced apart from the semiconductor light emitting element, and includes a step part provided at the bottom of the first opening so as to surround the semiconductor light emitting element, and a step part that extends from the step part to the semiconductor light emitting element. and an inclined surface with an aperture expanding in the light emission direction,
The resin portion is a semiconductor light emitting device that is filled in a space between a side surface of the semiconductor light emitting element and a side surface of the stepped portion.

FIG. 1 is a plan view of the light emitting device 10 according to the first embodiment of the present invention, viewed from above. FIG. 2 is a plan view showing the top surface of the light emitting device 10 filled with sealing resin. FIG. 1B is a cross-sectional view taken along line AA of FIG. 1B. FIG. 1B is a cross-sectional view taken along line BB in FIG. 1B. 3 is a diagram showing details of a cross section of a recess 11A that accommodates a semiconductor light emitting element 31. FIG. FIG. 5 is a plan view of a light emitting device 50 according to a second embodiment of the present invention, viewed from above. 5A is a cross-sectional view taken along line AA in FIG. 5A. FIG. FIG. 6 is a cross-sectional view schematically showing a cross section of a light emitting device 60 according to a third embodiment of the present invention.

Although preferred embodiments of the present invention will be described below, they may be modified and combined as appropriate. Further, in the following description and the accompanying drawings, substantially the same or equivalent parts are designated by the same reference numerals.

[First embodiment]
FIG. 1A is a plan view of the semiconductor light emitting device 10 according to the first embodiment of the present invention, viewed from above. Note that FIG. 1A schematically shows the internal structure without being filled with sealing resin. Further, FIG. 1B is a plan view showing the top surface of the light emitting device 10 filled with sealing resin.

2 is a cross-sectional view taken along line AA in FIG. 1B, and FIG. 3 is a cross-sectional view taken along line BB in FIG. 1B.

As shown in FIG. 1A, a semiconductor light emitting device (hereinafter simply referred to as a light emitting device) 10 includes a resin package 11, a semiconductor light emitting element 31 placed inside the resin package 11, and a semiconductor integrated circuit element (hereinafter referred to as an IC element). ) 32.

The semiconductor light emitting device 31 is a light emitting device such as a light emitting diode (LED) or a light emitting diode (LD). Further, the IC element 32 is a semiconductor electronic element for driving or controlling the semiconductor light emitting element 31.

As shown in FIGS. 2 and 3, the resin package 11 has a resin frame 12 and a lead frame 14 made up of a plurality of plate-shaped leads. Further, the resin package 11 has a recess 11A (first recess) and a recess 11B (second recess), which are openings of the resin frame 12.

More specifically, the resin frame 12 is integrally formed with the lead frame 14 to form the resin package 11. Specifically, the resin package 11 is formed by insert molding a resin frame. That is, the lead frame 14 is sandwiched between an upper mold and a lower mold, and a thermosetting resin is injected to form a resin molded body.

The resin frame 12 is made of resin such as silicone resin or epoxy resin, and contains light reflective particles such as titanium oxide particles (so-called white resin). Further, the resin frame 12 may contain a light absorbing material such as carbon black. That is, the resin frame 12 is preferably made of a light-shielding resin that has light-reflecting or light-absorbing properties. Further, the resin frame 12 may be made of a resin different from the sealing resin 22 described later, such as a resin such as a colored resin.

The leads of the lead frame 14 are exposed at the bottoms of the recesses 11A and 11B of the resin package 11. The semiconductor light emitting element 31 is placed on the lead 14C exposed at the bottom of the recess 11A, and is electrically connected to the lead 14A (first electrode) and the lead 14B (second electrode) by a bonding wire BW. Emitted light LE is emitted from the semiconductor light emitting element 31 by applying a voltage between the leads 14A and 14B.

The IC element 32 is placed on the lead 14Q exposed at the bottom of the recess 11B, and is electrically connected to the plurality of leads 14P. Further, any one of the plurality of leads 14P is electrically connected to the lead 14A or the lead 14B, and the semiconductor light emitting element 31 is driven or controlled.

The plurality of leads of the lead frame 14 are made of, for example, Cu (copper), and the surfaces thereof are plated with nickel/gold (Ni/Au) or the like. The plurality of leads are formed on substantially the same plane and spaced apart from each other by a spacing portion (slit).

As shown in FIG. 1B, the recess 11A and the recess 11B of the resin package 11 are filled with a sealing resin 22 and a sealing resin 23, respectively, and are sealed.

In this embodiment, the sealing resin 22 filled in the recess 11A is made of a light-transmitting resin, for example, a transparent resin or a transparent resin containing phosphor particles (filler). Further, the sealing resin 23 filled in the recess 11B is a light-shielding resin, for example, a white resin or a black resin.

As shown in FIG. 2, the height H2 of the IC element 32 from the surface of the lead frame 14 is greater than the height H1 of the semiconductor light emitting element 31 (H2>H1). For example, the height H1 of the semiconductor light emitting device 31 is approximately 100 μm to 200 μm.

On the other hand, the height H2 of the IC element 32 is about several times the height H1 of the semiconductor light emitting element 31, and is typically about 300 μm to 400 μm. Note that, as shown in FIGS. 2 and 3, the resin frame 12 has substantially the same height H over the entire surface of the resin package 11.

The resin frame 12 surrounding the recess 11A in which the semiconductor light emitting device 31 is mounted has a step portion 12D whose height from the surface of the lead frame 14 is HD, and a step portion 12D that allows the emitted light LE from the semiconductor light emitting device 31 to be emitted from the step portion 12D. It has an inner surface 12R that is an inclined surface with an opening that expands in the emission direction (perpendicular direction of the lead frame 14).

The resin frame 12 surrounding the recess 11A in which the semiconductor light emitting element 31 is mounted has a stepped portion 12D having a height HD from the surface of the lead frame 14 at the bottom of the recess 11A. The stepped portion 12D is spaced apart from the semiconductor light emitting element 31 and is formed so as to surround the semiconductor light emitting element 31. Furthermore, it is preferable that the stepped portion 12D be formed to have a constant width when viewed from above.

Further, the recessed portion 11A of the resin frame 12 has an inner surface 12R that is an inclined surface with an opening surface that expands from the stepped portion 12D in the emission direction of the emitted light LE of the semiconductor light emitting element 31 (that is, in the vertical direction of the lead frame 14). .

Further, the inner surface 12R of the resin frame 12 surrounding the recess 11A functions as a reflective surface that reflects the emitted light LE from the semiconductor light emitting element 31.

As shown in FIGS. 2 and 3, a resin portion 21 made of a reflective white resin is provided between the side surface of the semiconductor light emitting element 31 and the side surface of the stepped portion 12D. Furthermore, a sealing resin 22 is formed on the semiconductor light emitting element 31 and the resin portion 21 and is made of a translucent resin and fills the recess 11A.

As described above, the difference in height between the semiconductor light emitting element 31 and the IC element 32 is large. As described above, in the case of a semiconductor light emitting element mounted at the bottom of a deep recess, it is difficult to form a resin part that covers the side surface of the semiconductor light emitting element so that the resin does not creep up onto the top surface of the semiconductor light emitting element.

In the semiconductor light emitting device 31 of this embodiment, although the resin portion 21 reaches the upper end (edge) of the semiconductor light emitting device 31, it does not creep up to the upper surface (emission surface) and is formed to cover the entire side surface. has been done. The same applies to the stepped portion 12D of the resin frame 12, and although the resin portion 21 reaches the upper end of the stepped portion 12D, it does not rise to the top surface and is formed to cover the entire side surface. That is, the resin portion 21 is filled in the space between the side surface of the semiconductor light emitting element 31 and the side surface of the stepped portion 12D.

This is because the height HD of the stepped portion 12D of the resin frame 12 is smaller than the height H1 of the semiconductor light emitting element 31 by the amount D (HD<H1, H1-HD=D). . That is, when the resin of the resin portion 21 is injected, the resin is prevented from creeping up onto the upper surface of the semiconductor light emitting element 31 even though the resin covers the entire side surface. That is, the anchor effect of the upper end of the semiconductor light emitting element 31 prevents the injected resin from creeping up.

Further, the surface (upper surface) of the resin portion 21 has a smooth concave shape. Therefore, diffused reflection of the emitted light from the semiconductor light emitting element 31 within the recess 11A, and a decrease in the intensity of the emitted light and an adverse effect on the light distribution characteristics due to the diffused reflection are prevented.

Therefore, light emitted from the side surface of the semiconductor light emitting element 31 can be efficiently extracted from the surface of the light emitting device 10. Furthermore, since the light reflected within the sealing resin 22 is reflected by the smooth surface of the resin portion 21, output light with high efficiency and good light distribution characteristics can be obtained.

FIG. 4 is a diagram showing a detailed cross section of the recess 11A that accommodates the semiconductor light emitting device 31. As shown in FIG. In this embodiment, the recessed portion 11A of the resin package 11 is preferably formed to have an opening having a half-value angle of orientation θ or more so as not to block the light emitted from the semiconductor light emitting element 31.

In FIG. 4, the semiconductor light emitting device 31 has a half-value angle of orientation of 120°, and is formed with an aperture of 120° in the emission direction. In accordance with the directivity characteristics of the semiconductor light emitting element 31, it is preferable that the angle is at least 90°.

[Second embodiment]
FIG. 5A is a plan view of a light emitting device 50 according to the second embodiment of the present invention, viewed from above. Note that FIG. 1A schematically shows the internal structure when the sealing resin is not filled. Further, FIG. 5B is a cross-sectional view showing a cross section taken along line AA in FIG. 5A.

The light emitting device 50 of this embodiment is configured as a device that mounts a semiconductor light emitting element 31, and differs from the light emitting device 10 of the first embodiment in that it does not mount an IC element 32.

More specifically, the light emitting device 50 includes a resin package 51 and a semiconductor light emitting element 31 placed in a recess 51A of the resin package 51. The resin package 51 has a resin frame 52 and a lead frame 54 made up of a plurality of leads.

In the light emitting device 50, the semiconductor light emitting element 31 is placed on the lead 54C exposed at the bottom of the recess 51A of the resin package 51. The semiconductor light emitting element 31 is electrically connected to a lead 54A (first electrode) and a lead 54B (second electrode) by a bonding wire BW. Emitted light LE is emitted from the semiconductor light emitting element 31 by applying a voltage between the leads 54A and 54B.

As shown in FIG. 5B, the height of the semiconductor light emitting element 31 from the surface of the lead frame 54 is H1, and the stepped portion 52D of the resin frame 52 within the recess 51A has a height HD, and HD<H1. be. Further, the height of the resin frame 52 surrounding the recessed portion 51A is H.

Therefore, the resin portion 21 between the side surface of the semiconductor light emitting element 31 and the stepped portion 52D does not creep up onto the upper surface of the semiconductor light emitting element 31, although it covers the entire side surface of the semiconductor light emitting element 31. Further, the surface (upper surface) of the resin portion 21 has a smooth curved shape (concave shape). The same applies to the stepped portion 52D of the resin frame 12.

The height H of the resin frame 52 is preferably at least twice the height H1 of the semiconductor light emitting element 31. For example, the height H1 of the semiconductor light emitting device 31 is approximately 100 μm to 200 μm.

Although the light emitting device 50 does not have an element higher in height than the semiconductor light emitting element 31 like the first embodiment, the semiconductor light emitting element 31 has a directivity half angle of 120 degrees, and the recess 51A of the resin package 51 is It is formed as an aperture of 120° in the emission direction.

That is, even if the height of the resin package 51 is high (the recess 51A is deep), the light emitted from the semiconductor light emitting element 31 at an angle of 120° (±60°) or more will be transmitted to the inner surface 52R of the recess 51A. Since the light is reflected in the optical axis direction, the intensity of the emitted light can be increased.

According to this embodiment, it is possible to provide a light emitting device that has the same advantages as the embodiments described above. Further, according to the light emitting device of this embodiment, the light with a large emission angle from the semiconductor light emitting element 31 is reflected in the optical axis direction by the inner surface 52R of the recess 51A, so that efficiency is high and good light distribution characteristics can be achieved. Output light is obtained.

[Third embodiment]
FIG. 6 is a sectional view schematically showing a cross section of a light emitting device 60 according to a third embodiment of the present invention. This embodiment differs from the light emitting device according to the above embodiments in that a plurality of semiconductor light emitting elements 65 are mounted side by side on a lead frame 64.

Also in the light emitting device of this embodiment, the height of the semiconductor light emitting element 65 from the surface of the lead frame 64 is H1, and the stepped portion 62D of the resin frame 62 within the recess 61A has a height HD, and HD< It is H1. Further, the height of the resin frame 52 surrounding the recessed portion 61A is H.

Therefore, the resin portion 21 between the side surface of the semiconductor light emitting element 65 and the stepped portion 62D does not creep up onto the upper surface of the semiconductor light emitting element 65, although it covers the entire side surface of the semiconductor light emitting element 65. Further, the surface of the resin portion 21 has a smooth concave shape. The same applies to the stepped portion 12D of the resin frame 12.

Furthermore, since the flow of the injected resin between the plurality of semiconductor light emitting elements 65 is suppressed by the adjacent semiconductor light emitting elements 65, the resin portion 21A between the semiconductor light emitting elements 65 covers the entire side surface of the semiconductor light emitting elements 65. This also prevents the semiconductor light emitting element 65 from creeping up onto the upper surface. Further, the surface of the resin portion 21A has a smooth concave shape.

As described in detail above, according to the present invention, there is no creeping up to the top surface of the semiconductor light emitting device, and there is a resin portion that covers the entire side surface and has a smooth curved shape, resulting in high efficiency and good performance. Accordingly, it is possible to provide a semiconductor light emitting device that can obtain emitted light with a light distribution characteristic.

10, 50, 60: Light emitting device, 11: Resin package, 11A, 51A, 61A: First recess (opening), 11B: Second recess, 12, 52, 62: Frame, 12R. 52R, 62R: Inner surface of recess, 14, 54, 64: Lead frame, 14A, 14B, 14C, 14P, 14Q, 54A, 54B, 54C: Lead, 21, 21A: Resin part, 22: Sealing resin, 23 : Sealing resin, 31, 65: Semiconductor light emitting element, 32: IC element

Claims (7)

Multiple plate-shaped leads,
a frame that is integrally formed with the plurality of leads and has a first opening through which the plurality of leads are exposed;
a semiconductor light emitting element mounted on the lead exposed from the first opening;
a resin part that covers a side surface of the semiconductor light emitting element,
The frame body is spaced apart from the semiconductor light emitting element, and includes a step part provided at the bottom of the first opening so as to surround the semiconductor light emitting element, and a step part that extends from the step part to the semiconductor light emitting element. and an inclined surface with an aperture expanding in the light emission direction,
In the semiconductor light emitting device, the resin portion is filled in a space between a side surface of the semiconductor light emitting element and a side surface of the stepped portion. the frame has a second opening through which the lead is exposed;
A semiconductor integrated circuit element is mounted on the lead exposed from the second opening,
2. The semiconductor light emitting device according to claim 1, wherein the height of the semiconductor integrated circuit element from the surface of the lead is greater than the height of the semiconductor light emitting element. 3. The semiconductor light emitting device according to claim 1, wherein the resin portion reaches an upper edge of a side surface of the semiconductor light emitting element and covers the entire side surface. 4. The semiconductor light emitting device according to claim 1, wherein the resin portion has a smooth curved shape. 5. The semiconductor light emitting device according to claim 1, wherein the resin portion is made of a light-shielding resin. 6. The semiconductor light emitting device according to claim 1, wherein the first opening is filled with a transparent resin. 7. The semiconductor light emitting device according to claim 1, wherein the light-transmitting resin contains phosphor particles.

Images