JP2023132206A - Substrate processing device and substrate processing method - Google Patents

Abstract

To provide a substrate processing device and a substrate processing method that effectively perform surface treatment on a substrate, effectively remove impurities remaining on a substrate, and effectively improve substrate surface damage and roughness.SOLUTION: In a substrate processing apparatus including a process chamber, a substrate support portion, a gas supply portion, a microwave application unit, and a controller, a substrate processing method includes a first processing step of processing the substrate by transferring hydrogen radicals to the substrate controlled at a first temperature, and a second processing step of processing the substrate by transmitting hydrogen radicals to the substrate controlled at a second temperature that is different from the first temperature.SELECTED DRAWING: Figure 2

Description

The present invention relates to a substrate processing apparatus and a substrate processing method.

As semiconductor devices become more highly integrated, the size of active regions also decreases. This also reduces the channel length of the MOS transistor formed in the active region. As the channel length of a MOS transistor becomes smaller, the operating performance of the transistor deteriorates due to a short channel effect. Various research efforts are underway to maximize the performance of devices while reducing the size of devices formed on a substrate.

Among these, a typical example is a fin-FET element having a fin structure. Such a FinPet element can be formed by etching a substrate such as a wafer containing silicon (Si). At this time, roughness of the substrate surface generated during the etching process may cause deterioration of transistor performance. Generally, damage and roughness on the substrate surface are improved through an annealing process that transfers radicals to the substrate surface. However, if an annealing process is performed on the substrate without properly removing impurities from the substrate, the impurities remaining on the substrate may cause performance deterioration of the semiconductor device.

Korean Patent Publication No. 10-2015-0061163

One object of the present invention is to provide a substrate processing apparatus and a substrate processing method that efficiently process a substrate.

Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can effectively perform surface treatment on a substrate.

Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can effectively remove impurities remaining on a substrate.

Another object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can effectively improve substrate surface damage and roughness.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned will be clearly understood by a person having ordinary knowledge in the technical field to which the present invention pertains from this specification and the attached drawings. be able to be understood.

The present invention provides an apparatus for processing a substrate. An apparatus for processing a substrate includes a process chamber having a process space, a substrate support part having a heater that supports the substrate in the process space and adjusts the temperature of the substrate, and a gas supply supplying a process gas to the process space. a gas excitation unit that excites the process gas to generate radicals; and a controller, the controller supplies the process gas to the processing space and controls the gas supply to generate the radicals. and controlling the gas excitation unit to adjust the temperature of the substrate at a first temperature while the radicals are transferred to the substrate, and thereafter adjust the temperature of the substrate at a temperature different from the first temperature. The substrate support can be controlled to adjust at a certain second temperature.

According to one embodiment, the controller may control the substrate support so that the second temperature is higher than the first temperature.

According to one embodiment, the controller may control the substrate support so that the first temperature is between 50 degrees and 300 degrees.

According to one embodiment, the controller may control the substrate support so that the second temperature is between 400 degrees and 700 degrees.

According to one embodiment, at least one exhaust hole is formed in the process chamber and is connected to an exhaust line for exhausting the process space, and the controller controls the process chamber so that the pressure in the process space is between 10 mTorr and 4 Torr. A pressure reducing member connected to the exhaust line can be controlled so that the pressure becomes .

According to one embodiment, impurities including germanium (Ge) may be attached to the substrate to be treated with the radicals, and the substrate may be made of a material including silicon (Si).

According to an embodiment, the process gas supplied by the gas supply unit may include at least one gas selected from hydrogen and an inert gas.

According to one embodiment, the gas excitation unit may include a microwave power source and a microwave antenna that receives the power applied by the microwave power source and applies microwaves to the processing space.

The present invention also provides a substrate processing apparatus that processes the surface of a substrate to which germanium (Ge) is attached. The substrate processing apparatus includes a process chamber having a process space, a substrate support part having a temperature control member that supports a substrate in the process space and adjusts the temperature of the substrate, and supplies a process gas containing hydrogen in the process space. The controller includes a gas supply unit, a gas excitation unit that excites the process gas to generate hydrogen radicals, and a controller, and the controller transfers the hydrogen radicals to the substrate to remove the germanium. The gas supply unit and the gas excitation unit may be controlled to perform a second treatment step of transferring the hydrogen radicals to the substrate to improve surface roughness of the substrate.

According to an embodiment, the controller may control the temperature of the substrate to be a first temperature in the first processing step, and the temperature of the substrate to be a second temperature different from the first temperature in the second processing step. The substrate support may be controlled to have a temperature.

According to one embodiment, the controller may control the substrate support so that the second temperature is higher than the first temperature.

According to one embodiment, the controller controls the substrate so that the first temperature is between 50 degrees and 300 degrees, and the second temperature is between 400 degrees and 700 degrees. The support can be controlled.

According to one embodiment, the substrate may be made of a material containing silicon (Si).

The invention also provides a method of processing a substrate. The substrate processing method includes a first processing step of transferring hydrogen radicals to the substrate, which is controlled at a first temperature, and processing the substrate, and a second processing step, which is controlled at a second temperature that is different from the first temperature. The method may include a second treatment step of transmitting the hydrogen radicals to the substrate to treat the substrate.

According to one embodiment, the second temperature may be higher than the first temperature.

According to one embodiment, the first temperature may be greater than or equal to 50 degrees and less than or equal to 300 degrees.

According to one embodiment, the second temperature may be greater than or equal to 400 degrees and less than or equal to 700 degrees.

According to one embodiment, the pressure within a vacuum chamber providing a space in which the substrate is processed may be greater than or equal to 10 mTorr and less than or equal to 4 Torr.

According to an embodiment, the first treatment step may include removing impurities including germanium (Ge) deposited on the substrate, and the second treatment step may be performed after the first treatment step. It can be provided with a material containing silicon (Si).

According to an embodiment, the plasma containing hydrogen radicals may be one of direct plasma and remote plasma.

According to one embodiment of the present invention, substrates can be processed efficiently.

Further, according to an embodiment of the present invention, the electric field generated in the peripheral region of the substrate may be adjusted to minimize the transfer of impurities to the substrate.
It should be understood that the effects of the present invention are not limited to the above-mentioned effects, but include all effects that can be inferred from the detailed description of the present invention or the structure of the invention described in the claims. There must be.

1 is a diagram showing a substrate processing apparatus according to an embodiment of the present invention. 1 is a flowchart showing a method for processing a substrate according to an embodiment of the present invention. 3 is a diagram illustrating a substrate processing apparatus that performs a first processing step of FIG. 2; FIG. 3 is a diagram showing the appearance of a substrate after the second processing step of FIG. 2 is performed; FIG. 3 is a diagram illustrating a substrate processing apparatus that performs a second processing step of FIG. 2. FIG. 3 is a diagram showing the appearance of a substrate after the second processing step of FIG. 2 is performed; FIG. 5 is a graph showing the efficiency with which impurities attached to a substrate are removed by radicals depending on the temperature of the substrate. 2 is a diagram illustrating a substrate on which a first processing step is performed when fins are formed on the substrate. 5 is a diagram showing a substrate after a first processing step is performed when fins are formed on the substrate. 5 is a diagram illustrating a substrate subjected to a second processing step when fins are formed on the substrate. FIG. 7 is a diagram showing a substrate after a second processing step is performed when fins are formed on the substrate. FIG. 1 is a diagram showing a substrate on which a first processing step is performed when a sheet structure is formed on the substrate. FIG. 2 is a diagram showing a substrate after a first processing step is performed when a sheet structure is formed on the substrate. FIG. FIG. 2 is a diagram showing a substrate on which a second processing step is performed when a sheet structure is formed on the substrate. FIG. FIG. 2 is a diagram showing a substrate after a second processing step is performed when a sheet structure is formed on the substrate. FIG.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention. However, the present invention can be implemented in various forms and is not limited to the embodiments described herein. In addition, in describing the preferred embodiments of the present invention in detail, if it is determined that a specific explanation of related known functions or configurations may unnecessarily obscure the gist of the present invention, the detailed explanation will be omitted. The explanation will be omitted. Further, the same reference numerals are used throughout the drawings for parts having similar functions and actions.

'Including' an element does not exclude other elements unless specifically stated to the contrary, but means that the other elements can also be included. Specifically, the words "comprising" and "having" are used to indicate the presence of features, numbers, steps, acts, components, parts, or combinations thereof described in the specification. However, it is to be understood that this does not exclude in advance the existence or possibility of addition of one or more other features, figures, steps, acts, components, parts or combinations thereof.

The singular term includes the plural term unless the context clearly dictates otherwise. In addition, the shapes and sizes of elements in the drawings may be exaggerated for clearer explanation.

Although terms such as first and second may be used to describe various components, the components should not be limited by the terms. These terms can be used to distinguish one component from another component. For example, a first component can be named a second component, and a similar second component can also be named a first component without departing from the scope of the present invention.

When a component is referred to as being "coupled" or "connected" to a different component, it may also be directly coupled or connected to other components. , it should be understood that there may be other components in between. On the other hand, when a component is referred to as being "directly coupled" or "directly connected" to a different component, it must be understood that there are no intervening components. Probably. Other expressions describing relationships with components, such as “between” and “immediately between” or “adjacent to” and “directly adjacent to,” should be interpreted similarly. .

Unless otherwise defined, all terms used herein, including technical or scientific terms, are defined as commonly understood by one of ordinary skill in the art to which this invention pertains. It means the same thing. Terms such as those commonly used and previously defined shall be construed with meanings consistent with the meanings they have in the context of the relevant art, and unless expressly defined in this application, terms such as ideal or overly is not interpreted in a formal sense.

Embodiments of the present invention will be described in detail below with reference to FIGS. 1 to 15.

FIG. 1 is a diagram showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a substrate processing apparatus performs a plasma process on a substrate (W). The substrate processing apparatus includes a process chamber 100, a substrate support part 200, a gas supply part 300, a microwave application unit 400, and a controller 500.

The process chamber 100 may have a processing space 101 . The processing space 101 may be a space in which a substrate (W) is processed. An opening (not shown) may be formed in one side wall of the process chamber 100 . The opening is provided as a passage through which the substrate (W) can enter and exit the process chamber 100. The opening is opened and closed by a door (not shown). An exhaust hole 102 is formed at the bottom of the process chamber 100 . The exhaust hole 102 is connected to an exhaust line 121. The exhaust line 121 may be connected to a pressure reducing member 123. The pressure reducing member 123 may be a pump. Reaction byproducts generated during the process and gas remaining inside the process chamber 100 may be exhausted to the outside through the exhaust line 121.

In addition, the pressure in the processing space 101 can be maintained at a set pressure by the reduced pressure provided by the pressure reducing member 123 through the exhaust line 121. The pressure in the processing space 101 can be maintained at a pressure close to vacuum. That is, the process chamber 100 may be a vacuum chamber in which the pressure in the process space 101 is maintained close to vacuum while processing the substrate (W). For example, the controller 500 described below can control the pressure reducing member 123 so that the pressure in the processing space 101 is between 10 mTorr and 4 Torr (eg, 10 mTorr or more and 4 Torr or less).

A substrate support unit 200 is located inside the process chamber 100 . The substrate support section 200 supports the substrate (W). The substrate support unit 200 includes an electrostatic chuck that attracts the substrate (W) using electrostatic force.

The electrostatic chuck 200 includes a dielectric plate 210, a lower electrode 220, a heater 230, a support plate 240, an insulating plate 270, and a focus ring 280.

The dielectric plate 210 is located at the upper end of the electrostatic chuck 200. The dielectric plate 210 is a disc-shaped dielectric substance. A substrate (W) is placed on the upper surface of the dielectric plate 210. The upper surface of the dielectric plate 210 has a smaller radius than the substrate (W). Therefore, the edge region of the substrate (W) is located outside the dielectric plate 210. A first supply channel 211 is formed in the dielectric plate 210 . The first supply channel 211 is provided from the top surface to the bottom surface of the dielectric plate 210 . A plurality of first supply passages 211 are formed spaced apart from each other, and are provided as passages through which a heat transfer medium is supplied to the bottom surface of the substrate (W).

A lower electrode 220 and a heater 230 are embedded inside the dielectric plate 210 . The lower electrode 220 is located above the heater 230. The lower electrode 220 is electrically connected to a lower power source 221 . Lower power supply 221 includes a DC power supply. A lower power switch 222 is installed between the lower electrode 220 and the lower power source 221 . The lower electrode 220 may be electrically connected to a lower power source 221 by turning a lower power switch 222 on/off. When the lower power switch 222 is turned on, a direct current is applied to the lower electrode 220. An electric force acts between the lower electrode 220 and the substrate (W) due to the current applied to the lower electrode 220, and the substrate (W) is attracted to the dielectric plate 210 by the electric force.

The heater 230 may be a temperature adjusting member that adjusts the temperature of the substrate (W) to a set temperature. Further, the substrate (W) is maintained at a predetermined temperature by the heat generated by the heater 230. Heater 230 includes a helical coil. The heaters 230 may be embedded in the dielectric plate 210 at uniform intervals. The temperature of the heater 230 may be increased by receiving power from the heater power source 231. Additionally, a heater power switch 232 may be installed between the heater 230 and the heater power source 231. The heater 230 can be electrically connected to a heater power source 231 by turning on/off a heater power switch 232 . Further, the temperature of the heater 230 may change depending on the amount of power applied to the heater 230 by the heater power source 231. For example, the temperature of the heater 230 may increase in proportion to the amount of power applied to the heater 230. Also, the heater 230 may be connected to a heater sensor (not shown) that senses the temperature of the heater 230. The heater sensor may sense the temperature of the heater 230 in real time, and may transmit the sensed real time temperature of the heater 230 to a controller 500, which will be described later. The controller 500 can vary the amount of power transmitted to the heater 230 based on the temperature of the heater 230 detected by the heater sensor.

A support plate 240 is located below the dielectric plate 210 . The bottom surface of the dielectric plate 210 and the top surface of the support plate 240 may be bonded together using an adhesive 236. The support plate 240 may be made of aluminum. The upper surface of the support plate 240 may be stepped such that the center area is located higher than the edge area. The center region of the upper surface of the support plate 240 has an area corresponding to the bottom surface of the dielectric plate 210 and is bonded to the bottom surface of the dielectric plate 210 . A first circulation channel 241, a second circulation channel 242, and a second supply channel 243 are formed in the support plate 240.

The first circulation passage 241 is provided as a passage through which a heat transfer medium circulates. The first circulation channel 241 may be formed inside the support plate 240 in a spiral shape. Alternatively, the first circulation channel 241 may be arranged such that ring-shaped channels having different radii have the same center. The respective first circulation channels 241 can be communicated with each other. The first circulation channels 241 are formed to have the same height.

The second circulation passage 242 is provided as a passage through which cooling fluid circulates. The second circulation channel 242 may be formed inside the support plate 240 in a spiral shape. Alternatively, the second circulation channel 242 may be arranged such that ring-shaped channels having different radii have the same center. The respective second circulation channels 242 can be communicated with each other. The second circulation passage 242 may have a larger cross-sectional area than the first circulation passage 241 . The second circulation channels 242 are formed to have the same height. The second circulation channel 242 may be located below the first circulation channel 241 .

The second supply channel 243 extends upward from the first circulation channel 241 and is provided on the upper surface of the support plate 240 . The second supply channels 243 are provided in a number corresponding to the number of first supply channels 211 and connect the first circulation channel 241 and the first supply channel 211 .

The first circulation channel 241 is connected to a heat transfer medium storage unit 252 through a heat transfer medium supply line 251 . The heat transfer medium storage unit 252 stores a heat transfer medium. The heat transfer medium includes an inert gas. According to an embodiment, the heat transfer medium includes helium (He) gas. The helium gas is supplied to the first circulation channel 241 through the supply line 251, passes sequentially through the second supply channel 243 and the first supply channel 211, and is supplied to the bottom surface of the substrate (W). The helium gas acts as a medium through which heat transferred from the substrate (W) due to plasma is transferred to the electrostatic chuck 200. The ion particles contained in the plasma are attracted by the electric force generated in the electrostatic chuck 200 and move to the electrostatic chuck 200, and during the movement, they collide with the substrate (W) to perform an etching process. Heat is generated in the substrate (W) during the process in which the ion particles collide with the substrate (W). Heat generated by the substrate (W) is transferred to the electrostatic chuck 200 through helium gas supplied to the space between the bottom surface of the substrate (W) and the top surface of the dielectric plate 210. This allows the substrate (W) to be maintained at the set temperature.

The second circulation channel 242 is connected to a cooling fluid storage unit 262 through a cooling fluid supply line 261 . The cooling fluid storage unit 262 stores cooling fluid. A cooler 263 may be provided within the cooling fluid storage unit 262 . The cooler 263 cools the cooling fluid to a predetermined temperature. Alternatively, the cooler 263 can be installed on the cooling fluid supply line 261. The cooling fluid supplied to the second circulation path 242 through the cooling fluid supply line 261 circulates along the second circulation path 242 to cool the support plate 240 . Cooling of the support plate 240 cools both the dielectric plate 210 and the substrate (W), thereby maintaining the substrate (W) at a predetermined temperature.

An insulating plate 270 is provided below the support plate 240 . The insulating plate 270 has a size corresponding to the supporting plate 240. The insulating plate 270 is located between the support plate 240 and the bottom surface of the chamber 100. The insulating plate 270 is made of an insulating material and electrically insulates the support plate 240 and the chamber 100.

A focus ring 280 is located in the edge region of the electrostatic chuck 200. The focus ring 200 has a ring shape and is arranged around the dielectric plate 210. The upper surface of the focus ring 280 may be stepped such that the outer portion 280a is higher than the inner portion 280b. The inner upper surface 280b of the focus ring 280 is located at the same height as the upper surface of the dielectric plate 210. The upper inner portion 280b of the focus ring 280 supports the edge region of the substrate (W) located outside the dielectric plate 210. An outer portion 280a of the focus ring 280 is provided to surround the edge area of the substrate (W). The focus ring 280 expands the electric field formation region so that the substrate (W) is located at the center of the plasma formation region. As a result, plasma is uniformly formed over the entire area of the substrate (W), and each area of the substrate (W) can be uniformly etched.

The gas supply unit 300 supplies process gas to the process space 101 of the process chamber 100 . The gas supply unit 300 can supply a process gas into the process chamber 100 through a gas supply hole 105 formed in a side wall of the process chamber 100 . The process gas supplied to the processing space 101 by the gas supply unit 300 may include hydrogen and at least one gas selected from inert gases. Inert gases may include helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and radon (Rn).

The microwave application unit 400 may be a gas excitation unit that applies microwaves to the processing space 101 of the process chamber 100 to excite process gas. For example, the microwave application unit 400 may generate plasma by exciting a process gas. The plasma excited from the process gas may contain hydrogen radicals. The hydrogen radicals can be transferred to the substrate (W) to remove impurities attached to the substrate (W) or improve the roughness of the surface of the substrate (W).

The microwave application unit 400 includes a microwave power source 410, a waveguide 420, a microwave antenna 430, a dielectric block 450, a front plate 460, a dielectric plate 470, and a cooling plate 480.

Microwave power source 410 generates microwaves. The waveguide 420 is connected to the microwave power source 410 and provides a path through which microwaves generated by the microwave power source 410 are transmitted.

A microwave antenna 430 is located inside the tip of the waveguide 420. The microwave antenna 430 applies the microwave transmitted through the waveguide 420 to the inside of the process chamber 100 . For example, the microwave antenna 430 may receive the power applied by the microwave power source 410 and apply microwaves to the processing space 101 .

The microwave antenna 430 includes an antenna 431, an antenna load 433, an outer conductor 434, a microwave adapter 436, a connector 441, a cooling plate 443, and an antenna height adjuster 445.

The antenna 431 is provided in the form of a thin disk, and has a plurality of slot holes 432 formed therein. The slot holes 432 provide a passage for microwaves to pass through. The slot holes 432 may be provided in various shapes. The slot holes 432 may be provided in the shape of 'x', '+', '-', etc. The slot holes 432 may be combined with each other and arranged in a plurality of ring shapes. The rings have the same center and different radii.

The antenna rod 433 is provided as a conical rod. The length direction of the antenna road 433 is arranged in the vertical direction. The antenna load 433 is located above the antenna 431, and its lower end is inserted and fixed into the center of the antenna 431. Antenna load 433 transmits microwaves to antenna 431.

The outer conductor 434 is located below the tip of the waveguide 420 . A space connected to the inner space of the waveguide 420 is vertically formed inside the outer conductor 434 . A part of the antenna load 433 is located inside the outer conductor 434 .

A microwave adapter 436 is located inside the tip of the waveguide 420 . The microwave adapter 436 has a cone shape with an upper end having a larger radius than a lower end. A housing space 437 with an open bottom is formed at the lower end of the microwave adapter 436 . The entrance portion 438 of the receiving space 437 is provided with a relatively smaller radius than the inner region.

A connector 441 is located in the housing space 437 . Connector 441 is provided in a ring shape. The outer surface of the connector 441 has a radius corresponding to the inner surface of the receiving space 437. The outer surface of the connector 441 is in contact with the inner surface of the housing space 437 and is fixed therein. The connector 441 may be made of a conductive material. The upper end of the antenna load 433 is located within the accommodation space 437 and is sandwiched between the inner regions of the connectors 441 . The upper end of the antenna load 433 is pressed into the connector 441 and electrically connected to the microwave adapter 436 through the connector 441 .

Cooling plate 443 is coupled to the upper end of microwave adapter 436. The cooling plate 443 may be a plate having a radius larger than the upper end of the microwave adapter 436. The cooling plate 443 may be made of a material with better thermal conductivity than the microwave adapter 436. The cooling plate 443 may be made of copper (Cu) or aluminum (Al). The cooling plate 443 facilitates cooling of the microwave adapter 436 and prevents the microwave adapter 436 from being thermally deformed.

The antenna height adjustment part 445 connects the microwave adapter 436 and the antenna load 433. Then, the antenna height adjustment unit 445 moves the antenna load 433 so that the relative height of the antenna 431 with respect to the microwave adapter 436 is changed. Antenna height adjustment section 445 includes a bolt. The bolt 445 is inserted into the microwave adapter 436 in the vertical direction from the top to the bottom of the microwave adapter 436, and its lower end is located in the housing space 437. Bolt 445 is inserted into the central region of microwave adapter 436. The lower end of the bolt 445 is inserted into the upper end of the antenna load 433. A thread groove is formed at a predetermined depth at the upper end of the antenna load 433 into which the lower end of the bolt 445 is inserted and fastened. The antenna load 433 is moved in the vertical direction by rotation of the bolt 445. For example, when the bolt 445 is rotated clockwise, the antenna load 433 can rise, and when the bolt 445 is rotated counterclockwise, the antenna load 433 can be lowered. As the antenna load 433 moves, the antenna 431 can be moved up and down.

Dielectric plate 470 is located above antenna 431 . The dielectric plate 470 is made of a dielectric material such as alumina or quartz. The microwaves transmitted in the vertical direction from the microwave antenna 430 are transmitted in the radial direction of the dielectric plate 470. The wavelength of the microwave transmitted to the dielectric plate 470 is compressed and resonated. The resonated microwaves are transmitted through the slot holes 432 of the antenna 431.

A cooling plate 480 is provided on top of the dielectric plate 470 . Cooling plate 480 cools dielectric plate 470. The cooling plate 480 may be made of aluminum. The cooling plate 480 may cool the dielectric plate 470 by flowing a cooling fluid through a cooling channel (not shown) formed therein. Cooling methods include water cooling and air cooling.

A dielectric block 450 is provided below the antenna 431 . The dielectric block 450 is made of a dielectric material such as alumina or quartz. The microwaves transmitted through the slot hole 432 of the antenna 431 are radiated into the process chamber 100 through the dielectric block 450. The process gas supplied into the process chamber 100 is excited into a plasma state by the electric field of the radiated microwaves. The top surface of the dielectric block 450 may be spaced apart from the bottom surface of the antenna 431 by a predetermined distance.

In the structure of the microwave antenna 430 described above, the antenna height adjustment part 445 limits the movement of the antenna load 433 in the left and right direction. Heat is generated in the microwave adapter 436 and the connector 441 during the microwave transmission process. The generated heat deforms the microwave adapter 436 and the connector 441, and due to the deformation, the antenna load 433 is no longer caught between the connector 441 and the antenna load 433 can be moved in the left and right direction. When the antenna load 433 moves in the left-right direction, the distance between the microwave adapter 436 and the antenna load 433 varies depending on the region. Such a gap difference makes the microwaves transmitted to the antenna load 433 non-uniform. Further, when the antenna load 433 and the microwave adapter 436 come into contact with each other due to the movement of the antenna load 433, an arc may be induced. Since the antenna height adjustment part 445 restricts the horizontal movement of the antenna load 433 with respect to the microwave adapter 436, the above-mentioned problems due to thermal deformation of the microwave adapter 436 and the connector 441 can be prevented.

Further, the antenna height adjustment unit 445 can move the antenna load 433 in the vertical direction so that the relative height of the antenna 431 with respect to the microwave adapter 436 is changed. If the antenna load 433 becomes less jammed due to thermal deformation of the microwave adapter 436 and the connector 441, the antenna 431 may come into contact with the dielectric block 450 while the antenna load 433 hangs down. Contact between the antenna 431 and the dielectric block 450 may also be caused by the thermal shape of the antenna 431. Contact between antenna 431 and dielectric block 450 induces loss of transmitted microwaves. When contact occurs between the antenna 431 and the dielectric block 450 as described above, the antenna height adjustment unit 445 may move the antenna load 433 upward so that the antenna 431 and the dielectric block 450 maintain a predetermined distance. . In addition, the antenna height adjustment unit 445 can maintain an appropriate distance between the antenna 431 and the dielectric block 450 by moving the antenna load 433 in the vertical direction.

The controller 500 can control the substrate processing apparatus. The controller 500 controls at least one of the substrate support section 200, gas supply section 300, and microwave application unit 400 of the substrate processing apparatus so that the substrate processing apparatus can perform the substrate processing method described below. can be controlled. The controller 500 also includes a process controller made by a microprocessor (computer) that executes control of the substrate processing apparatus, a keyboard through which an operator inputs commands to manage the substrate processing apparatus, and the operating status of the substrate processing apparatus. A user interface such as a display that visualizes and displays the process, a control program that controls the processing executed by the substrate processing equipment under the control of the process controller, and various data and processing conditions that cause each component to execute processing. A storage unit may be provided in which a program for processing, that is, a processing recipe is stored. The user interface and storage may also be connected to the process controller. The processing recipe may be stored in a storage medium in the storage unit, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as a flash memory. be.

Furthermore, as described above, the controller 500 can maintain the temperature of the substrate (W) at a set temperature by adjusting the amount of power transmitted from the heater power source 231 to the heater 230. For example, the controller 500 can recognize the temperature of the heater 230 sensed by the heater sensor in real time. In addition, parameters for changing the temperature of the substrate (W) depending on the temperature of the heater 230, which are experimental data performed in advance, may be input to the controller 500.

FIG. 2 is a flowchart illustrating a method for processing a substrate according to one embodiment of the present invention. Referring to FIG. 2, a substrate processing method according to an embodiment of the present invention may include a first processing step (S10) and a second processing step (S20). The first processing step (S10) and the second processing step (S20) may be performed sequentially. For example, after the first processing step (S10) is performed, the second processing step (S20) may be performed. In addition, the substrate (W) processed through the first processing step (S10) and the second processing step (S20) may be provided with a material containing silicon (Si).

FIG. 3 is a diagram showing a substrate processing apparatus that performs the first processing step of FIG. 2. Referring to FIG. Referring to FIG. 3, the first processing step (S10) may be an impurity removal step for removing impurities (I) remaining on the substrate (W). The impurity (I) to be removed in the first processing step (S10) is a by-product generated while etching the substrate (W).The film formed on the substrate (W) has not yet been removed through the etching process. It may be a residual membrane. For example, the impurity (I) deposited on the substrate (W) may be a compound containing germanium (Ge). For example, impurity (I) may include SiGe or GeO.

In the first processing step (S10), the controller 500 may control the substrate support unit 200 to maintain the temperature of the substrate (W) at a first temperature. The first temperature may be between 50 degrees Celsius and 300 degrees Celsius (eg, a temperature of 50 degrees Celsius or more and 300 degrees Celsius or less). Also, while the hydrogen radicals excited from the process gas are transferred to the surface of the substrate (W), the temperature of the substrate (W) is maintained at the first temperature to remove impurities (I) remaining on the substrate (W). can do.

Once the first processing step (S10) is completed, the impurity (I) deposited on the substrate (W) may be removed from the substrate (W), as shown in FIG.
FIG. 5 is a diagram showing a substrate processing apparatus that performs the second processing step of FIG. 2. Referring to FIG. Referring to FIG. 5, the second processing step (S20) may be a surface roughness improvement step to reduce the surface roughness of the substrate (W). The substrate (W) can be provided with a material containing silicon (Si) as described above.

In the second processing step (S20), the controller 500 controls the substrate support unit 200 to maintain the temperature of the substrate (W) at a second temperature that is different from the first temperature. The second temperature can be higher than the first temperature. The second temperature may be between 400 and 700 degrees Celsius (eg, above 400 degrees Celsius and below 700 degrees Celsius). Further, while the hydrogen radicals excited from the process gas are transferred to the surface of the substrate (W), the temperature of the substrate (W) is changed from the first temperature to the second temperature and maintained at the second temperature. surface roughness can be improved.

Once the second processing step (S20) is completed, the impurity (I) deposited on the substrate (W) may be removed, as shown in FIG. Also, the second processing step (S20) is performed after the first processing step (S10) is performed. That is, since the second processing step (S20) is performed after impurities have been removed from the substrate (W), the aforementioned problem of performance deterioration of the semiconductor device can be minimized.

FIG. 7 is a graph showing the efficiency with which impurities deposited on a substrate are removed by radicals depending on the temperature of the substrate. Specifically, in Figure 7, when the impurity (I) attached to the substrate (W) is a compound containing germanium (Ge), the impurity (I) removal efficiency (Etch Rate) by hydrogen radicals due to temperature change of the substrate (W) This is a graph that shows.

Referring to FIG. 7, the removal efficiency of compounds containing germanium (Ge) by hydrogen radicals is high between the first temperature (T1) and the third temperature (T3), and is particularly efficient at the second temperature (T3). Maximum efficiency is shown at temperature (T2). The first temperature (T1) may be approximately 50 degrees and the third temperature may be approximately 300 degrees. Further, the second temperature (T2) may be approximately 180 degrees. In other words, when the impurity (I) deposited on the substrate (W) is a compound containing germanium (Ge), when the temperature of the substrate (W) is adjusted to approximately 180 degrees, the removal efficiency of the impurity (I) by hydrogen radicals is is the highest. In addition, in the first processing step (S10), the temperature of the substrate (W) is changed from the 2-1 temperature (T2-1, for example, approximately 160 degrees) to the 2-2 temperature (T2-2, for example, approximately 200 degrees). ) may be desirable.

That is, in the first processing step (S10) and the second processing step (S20) of the present invention, the temperature of the substrate (W) is maintained at a first temperature and a second temperature, respectively. As mentioned above, the first temperature is 50 degrees to 300 degrees, and the second temperature is 400 degrees to 700 degrees.

The first temperature and the second temperature can be specified according to the predominant temperature range in which silicon (Si) and germanium (Ge) become volatile species (SiH4, GeH4). When silicon (Si) and germanium (Ge) become volatile species in response to hydrogen radicals, they can be removed from the surface of the substrate (W).

The temperature range in which germanium (Ge) is removed by hydrogen radicals may range from 50 degrees to 300 degrees. In particular, as mentioned above, the temperature at which germanium (Ge) removal efficiency is highest by hydrogen radicals is about 180 degrees. Therefore, in the first processing step (S10), impurities (I) containing germanium (Ge) can be effectively removed from the substrate (W).

Further, it is desirable that the temperature of the substrate (W) does not exceed 300 degrees in the first processing step (S10). In the case of silicon (Si) forming the substrate (W), the temperature range in which it is removed by hydrogen radicals is approximately 300 to 400 degrees, but the temperature of the substrate (W) is If the temperature exceeds 300 degrees, it is not appropriate because only the impurity (I) containing germanium (Ge) is removed and the substrate (W) itself may be damaged.

Further, in the second processing step (S20), as described above, it is desirable that the temperature of the substrate (W) is maintained at about 400 to 700 degrees. In the case of silicon (Si), when the temperature of the substrate (W) is maintained at about 400 to 700 degrees in a hydrogen radical atmosphere, silicon (Si) diffuses on the surface and improves the surface roughness of the substrate (W). It's for a reason.

Further, it is desirable that the temperature of the substrate (W) exceeds 400 degrees in the second processing step (S10). In the case of silicon (Si) forming the substrate (W), the temperature range in which it is removed by hydrogen radicals is approximately 300 to 400 degrees, but in the second processing step (S20), the temperature of the substrate (W) increases. If the temperature falls below 400 degrees, the surface roughness of the substrate (W) will not be improved and the substrate (W) itself may be damaged, which is not appropriate.

That is, in the substrate processing method according to an embodiment of the present invention, after the first processing step (S10) is performed to remove impurities (I) from the substrate (W), the second processing step (S20) is performed. Since the surface roughness of the substrate (W) is improved by using the method, the surface roughness of the substrate (W) can be improved more effectively. In addition, in the first processing step (S10), the temperature of the substrate (W) is adjusted to a temperature at which the impurity (I) is easily removed, and in the second processing step (S20), the temperature of the substrate (W) is adjusted to the temperature on the surface of the substrate (W). The substrate (W) processing efficiency can be performed more effectively by controlling the temperature to improve the roughness.

Hereinafter, application examples of the first processing step (S10) and the second processing step (S20) of the present invention will be described. As shown in FIG. 8, a pattern (P) having a fin structure may be formed on the substrate (W) through patterning and etching processes. Impurities (I) containing germanium (Ge) may be attached to the pattern (P).

When the first processing step (S10) is performed, hydrogen radicals are transferred to the substrate (W), and the temperature of the substrate (W) can be maintained at the first temperature (see FIG. 8). Once the first processing step (S10) is completed, the impurities (I) attached to the pattern (P) of the substrate (W) can be removed (see FIG. 9). At this time, the angle formed between the top surface and the side surface of the pattern (P) may be a first angle (A1).

When the second processing step (S20) is performed, hydrogen radicals are transferred to the substrate (W), and the temperature of the substrate (W) can be maintained at the second temperature (see FIG. 10). Once the second processing step (S20) is completed, the surface roughness of the pattern (P) of the substrate (W) can be improved (see FIG. 11). At this time, the angle formed by the top surface and the side surface of the pattern (P) may be a second angle (A2) that is close to a right angle. That is, the shape of the pattern (P) formed on the substrate (W) through the second processing step (S20) can also be improved.

Furthermore, hydrogen radicals do not have aromatic properties. In addition, when a sheet structure pattern (P) having a space separated from the substrate (W) is formed on the substrate (W) as shown in FIG. The processing step (S10) and the second processing step (S20) may be applied in the same or similar manner.

When the first processing step (S10) is performed, hydrogen radicals are transferred to the substrate (W), and the temperature of the substrate (W) can be maintained at the first temperature (see FIG. 10). Once the first processing step (S10) is completed, the impurities (I) attached to the pattern (P) of the substrate (W) can be removed (see FIG. 11).

When the second processing step (S20) is performed, hydrogen radicals are transferred to the substrate (W), and the temperature of the substrate (W) can be maintained at the second temperature (see FIG. 12). Once the second processing step (S20) is completed, the surface roughness of the pattern (P) of the substrate (W) can be improved (see FIG. 12).

In the above embodiment, the substrate support part 200 is an electrostatic chuck, but the substrate support part 200 can support the substrate in various ways. For example, the substrate support unit 200 may be provided with a vacuum chuck that holds the substrate under vacuum.

The plasma containing hydrogen radicals described above can be a direct plasma or a remote plasma. Direct plasma is a method in which plasma is directly generated within the processing space 101, and remote plasma is a method in which plasma is generated outside the processing space 101 and is caused to flow into the reaction chamber. On the other hand, methods for generating plasma containing hydrogen radicals include RF (Radio frequency) plasma, microwave plasma, inductively coupled plasma, capacitively coupled plasma, and electron cyclotron resonance (electron cyclotron resonance). There may be various methods such as Cyclotron Resonance (Cyclotron Resonance) plasma method.

In addition, in the above-mentioned example, the explanation was given as an example of generating plasma containing hydrogen radicals using microwaves, but the invention is not limited to this, and the above-mentioned embodiment adjusts the temperature of the substrate (W). The same or similar application may be made to an apparatus having a temperature control member for generating plasma and a plasma source for generating plasma from a process gas.

The foregoing detailed description is illustrative of the invention. Moreover, the foregoing description illustrates and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications can be made within the scope of the inventive concept disclosed in this specification, within the scope of equivalency to the contents of the author's disclosure, and/or within the scope of technology or knowledge in the art. The described embodiments are intended to explain the best way to implement the technical idea of the present invention, and various modifications may be made as required by the specific application field and use of the present invention. Therefore, the foregoing detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Additionally, the appended claims should be construed to include other implementations.

100 Process chamber 200 Substrate support section 220 Lower electrode 221 Lower power source 222 Lower power switch 230 Heater 231 Heater power source 232 Heater power switch 300 Gas supply section 400 Microwave application unit 500 Controller
S10 First processing stage
S20 Second processing stage

Claims (20)

A process chamber having a processing space in an apparatus for processing a substrate;
a substrate support unit that supports the substrate in the processing space and includes a heater that adjusts the temperature of the substrate;
a gas supply unit that supplies process gas to the processing space;
a gas excitation unit that excites the process gas to generate radicals; and a controller;
The controller is
supplying the process gas to the processing space and controlling the gas supply unit and the gas excitation unit to generate the radicals;
The substrate is supported so that the temperature of the substrate is adjusted to a first temperature while the radicals are transferred to the substrate, and thereafter the temperature of the substrate is adjusted to a second temperature that is different from the first temperature. Substrate processing equipment that controls the parts. The controller is
The substrate processing apparatus according to claim 1, wherein the substrate support section is controlled so that the second temperature is higher than the first temperature. The controller is
The substrate processing apparatus according to claim 1, wherein the substrate support section is controlled so that the first temperature is between 50 degrees and 300 degrees. The controller is
The substrate processing apparatus according to claim 3, wherein the substrate support section is controlled so that the second temperature is between 400 degrees and 700 degrees. The process chamber includes:
at least one exhaust hole connected to an exhaust line for exhausting the processing space;
The controller is
The substrate processing apparatus according to claim 1, wherein a pressure reducing member connected to the exhaust line is controlled so that the pressure in the processing space is between 10 mTorr and 4 Torr. The substrate treated with the radicals includes:
Impurities containing germanium (Ge) are attached,
The substrate is
6. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is made of a material containing silicon (Si). The process gas supplied by the gas supply unit is
7. The substrate processing apparatus according to claim 6, comprising at least one gas selected from hydrogen and an inert gas. The gas excitation part is
Any one of claims 1 to 5 characterized by comprising a microwave power source and a microwave antenna that receives the power applied by the microwave power source and applies microwaves to the processing space. The substrate processing apparatus described in one of the above. In a substrate processing device that processes the surface of a substrate to which germanium (Ge) is attached,
a process chamber having a processing space;
a substrate support section having a temperature adjustment member that supports the substrate in the processing space and adjusts the temperature of the substrate;
a gas supply unit that supplies a process gas containing hydrogen to the processing space;
a gas excitation unit that excites the process gas to generate hydrogen radicals; and a controller;
The controller is
a first processing step of transferring the hydrogen radicals to the substrate to remove the germanium; and a second processing step of transferring the hydrogen radicals to the substrate to improve surface roughness of the substrate. A substrate processing apparatus that controls the gas supply section and the gas excitation section. The controller is
The substrate support unit is controlled such that the temperature of the substrate becomes a first temperature in the first processing step, and the temperature of the substrate becomes a second temperature different from the first temperature in the second processing step. 10. The substrate processing apparatus according to claim 9. The controller is
11. The substrate processing apparatus according to claim 10, wherein the substrate support section is controlled so that the second temperature is higher than the first temperature. The controller is
The substrate supporting part is controlled so that the first temperature is between 50 degrees and 300 degrees, and the second temperature is between 400 degrees and 700 degrees. 12. The substrate processing apparatus according to 11. The substrate is
13. The substrate processing apparatus according to claim 12, wherein the substrate processing apparatus is made of a material containing silicon (Si). In a method of processing a substrate,
a first processing step of transferring hydrogen radicals to a substrate controlled at a first temperature to treat the substrate; and transferring the hydrogen radicals to the substrate controlled at a second temperature different from the first temperature. A substrate processing method comprising: a second processing step of processing the substrate by transmitting the same. The second temperature is
15. The substrate processing method according to claim 14, wherein the temperature is higher than the first temperature. The first temperature is
16. The substrate processing method according to claim 15, wherein the temperature is 50 degrees or more and 300 degrees or less. The second temperature is
17. The substrate processing method according to claim 16, wherein the temperature is 400 degrees or more and 700 degrees or less. The pressure within the vacuum chamber providing the space in which the substrate is processed is
The substrate processing method according to any one of claims 14 to 17, characterized in that the temperature is 10 mTorr or more and 4 Torr or less. The first processing step includes:
removing impurities including germanium (Ge) deposited on the substrate;
The second processing step includes:
Any one of claims 14 to 17, which is performed after the first treatment step and is characterized in that the surface roughness of the substrate provided with a material containing silicon (Si) is improved. The substrate processing method described in . The plasma containing hydrogen radicals is
18. The substrate processing method according to claim 14, wherein the substrate processing method is one of direct plasma and remote plasma.

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