TW202338900A - Apparatus and method of treating substrate - Google Patents

Abstract

The present invention provides a method of treating a substrate. The method may include: a first treatment operation in which hydrogen radicals are transferred to a substrate adjusted to have a first temperature to treat the substrate; and a second treatment operation in which the hydrogen radicals are transferred to the substrate adjusted to have a second temperature that is different from the first temperature to treat the substrate.

Description

Equipment and methods for processing substrates

The present invention relates to an equipment and method for processing a substrate.

Since the semiconductor device is highly integrated, the size of the active area is also reduced. Therefore, the channel length of the MOS transistor formed in the active region can also be reduced. When the channel length of a MOS transistor decreases, the operating efficiency of the transistor decreases due to the short channel effect. Therefore, various studies are conducted to maximize the performance of the device while reducing the size of the device formed on the substrate.

A typical example of the device is a Fin Field-Effect Transistor (Fin-FET) device with a fin structure. Such Fin-FET devices may be formed by etching a substrate including silicon (Si), such as a wafer. In this case, the surface roughness of the substrate produced during the etching process may lead to degradation of the performance of the transistor. Therefore, the damage and roughness of the substrate surface are generally improved by the annealing process, in which free radicals are transferred to the substrate surface. However, when an annealing process is performed on a substrate without properly removing impurities from the substrate, impurities remaining in the substrate cause performance degradation of the semiconductor device.

An object of the present invention is to provide an apparatus and method for processing a substrate, which can efficiently process the substrate.

Another object of the present invention is to provide an apparatus and method for processing a substrate, which apparatus and method can efficiently perform surface treatment on the substrate.

Another object of the present invention is to provide an equipment and method for processing a substrate, which equipment and method can efficiently remove remaining impurities on the substrate.

Another object of the present invention is to provide an equipment and method for processing a substrate, which equipment and method can effectively improve the surface damage and roughness of the substrate.

The effects of the present invention are not limited to the aforementioned effects, and those skilled in the art to which the present invention belongs will clearly understand the unmentioned effects based on this description and the accompanying drawings.

Exemplary embodiments of the present invention provide an apparatus for processing a substrate, the apparatus including: a process chamber having a processing space; a substrate support unit configured to support the substrate in the processing space and including a heater for regulating the temperature of the substrate; a gas supply unit configured to supply process gas to the processing space; a gas excitation unit configured to excite the process gas and generate free radicals; and control unit, wherein the control unit controls the gas supply unit and the gas excitation unit to generate free radicals by supplying process gas to the processing space, and controls the substrate support unit to adjust the temperature of the substrate to the first temperature, and then in The free radicals are transferred to the substrate while adjusting the temperature of the substrate to a second temperature that is different from the first temperature.

According to an exemplary embodiment, the control unit may control the substrate supporting unit such that the second temperature is higher than the first temperature.

According to an exemplary embodiment, the control unit may control the substrate supporting unit such that the first temperature is between 50°C and 300°C.

According to an exemplary embodiment, the control unit may control the substrate supporting unit such that the second temperature is between 400°C and 700°C.

According to an exemplary embodiment, in the process chamber, at least one exhaust hole connected to an exhaust line for discharging the processing space may be formed, and the control unit may control a decompression member connected to the exhaust line so that the processing space The pressure is between 10 mTorr and 4 Torr.

According to exemplary embodiments, impurities containing germanium (Ge) may be attached to the substrate treated by free radicals, and the substrate may be made of a material containing silicon (Si).

According to an exemplary embodiment, the process gas supplied through the gas supply unit may include at least one selected from hydrogen and inert gas.

According to an exemplary embodiment, the gas excitation unit may include: a microwave power supply; and a microwave antenna configured to receive power supplied by the microwave power supply and apply microwaves to the processing space.

Another exemplary embodiment of the present invention provides a substrate processing equipment for processing a substrate with germanium (Ge) attached to the surface. The substrate processing equipment includes: a process chamber having a processing space; a substrate support unit through configured to support the substrate in the processing space and including a temperature regulating member for regulating the temperature of the substrate; a gas supply unit with an aperture configured to supply a process gas containing hydrogen to the processing space; a gas excitation unit, the gas the excitation unit is configured to excite the process gas and generate hydrogen radicals; and a control unit, wherein the control unit controls the gas supply unit and the gas excitation unit to perform a first processing operation and a second processing operation, in which hydrogen Free radicals are transferred to the substrate to remove germanium, and hydrogen radicals are transferred to the substrate to improve the surface roughness of the substrate during the second processing operation.

According to an exemplary embodiment, the control unit may control the substrate supporting unit such that the temperature of the substrate becomes a first temperature in the first processing operation, and the temperature of the substrate becomes a second temperature different from the first temperature in the second processing operation. temperature.

According to an exemplary embodiment, the control unit may control the substrate supporting unit such that the second temperature is higher than the first temperature.

According to an exemplary embodiment, the control unit may control the substrate supporting unit such that the first temperature is between 50°C and 300°C, and the second temperature is between 400°C and 700°C.

According to exemplary embodiments, the substrate may be made of a material containing silicon (Si).

Another exemplary embodiment of the present invention provides a method of processing a substrate, the method including: a first processing operation in which hydrogen radicals are transferred to a substrate whose temperature is adjusted to a first temperature to process the substrate ; and a second processing operation in which the hydrogen radicals are transferred to the substrate whose temperature is adjusted to a second temperature different from the first temperature to process the substrate.

According to an exemplary embodiment, the second temperature may be higher than the first temperature.

According to exemplary embodiments, the first temperature may be 50°C or higher and 300°C or lower.

According to exemplary embodiments, the second temperature may be 400°C or higher and 700°C or lower.

According to exemplary embodiments, the pressure within the vacuum chamber providing a space in which the substrate is processed may be 10 mTorr or more and 4 Torr or less.

According to an exemplary embodiment, in the first processing operation, impurities containing germanium (Ge) attached to the substrate may be removed, and the second processing operation may be performed after the first processing operation, and in the second processing operation, It can improve the surface roughness of substrates made of materials containing silicon (Si).

According to an exemplary embodiment, the plasma including hydrogen radicals may be any of a direct plasma and a remote plasma.

According to exemplary embodiments of the present invention, it is possible to process substrates efficiently.

Furthermore, according to exemplary embodiments of the present invention, it is possible to minimize the transfer of impurities to the substrate by adjusting the electric field generated in the peripheral region of the substrate.

The effects of the present invention are not limited to the aforementioned effects, and those skilled in the art to which the present invention belongs will clearly understand the unmentioned effects based on this description and the accompanying drawings.

Exemplary embodiments of the invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. However, the present invention may be implemented variously and is not limited to the following embodiments. In the following description of the present invention, detailed descriptions of known functions and configurations incorporated herein are omitted to avoid making the subject matter of the present invention unclear. Additionally, the same reference numerals are used throughout the drawings for parts having similar functions and actions.

Unless expressly described to the contrary, the word "comprise" and variations such as "comprises" or "comprising" will be understood to imply the inclusion of stated elements but not the exclusion of any other elements. It will be understood that the terms "including" and "having" are intended to designate the presence of the characteristics, numbers, steps, operations, constituent elements and components, or combinations thereof described in this specification, and do not exclude the pre-existence or addition of one or more other Possibilities beyond the characteristics, number, steps, operations, constituent elements and subassemblies, or combinations thereof.

As used herein, singular expressions include plural expressions unless the context has an exact opposite meaning. Accordingly, the shapes, sizes and the like of elements in the drawings may be exaggerated for clearer description.

Terms such as first and second are used to describe various constituent elements, but the constituent elements are not limited by the terms. Terms are only used to distinguish one component element from another component element. For example, a first component element may be named a second component element, and similarly, a second component element may be named a first component element, without departing from the scope of the present invention.

It will be understood that when an element is referred to as being "coupled" or "connected to" another element, it can be directly coupled or connected to the other element, but intervening elements may also be present. In contrast, when one component element is "directly coupled to" or "directly connected to" another component element, it will be understood that there are no intervening elements present. Other expressions describing the relationship between elements, such as "between" and "just between" or "adjacent to" and "Directly adjacent to" should be interpreted similarly.

All terms, including technical or scientific terms, used herein have the same meaning as commonly understood by one skilled in the art unless they are defined differently. Terms defined in commonly used dictionaries should be interpreted as having meanings that match those in the context of the relevant field, and should not be interpreted as ideal or overly formal meanings unless they are clearly defined in this application.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to FIGS. 1 to 15 .

FIG. 1 is a diagram illustrating a substrate processing apparatus according to an exemplary embodiment of the present invention.

Referring to FIG. 1 , a substrate processing apparatus performs plasma processing on a substrate W. The substrate processing equipment includes a process chamber 100, a substrate supporting unit 200, a gas supply unit 300, a microwave application unit 400 and a control unit 500.

Process chamber 100 may have a processing space 101 . Processing space 101 may be a space in which substrate W is processed. An opening (not shown) may be formed in one side wall of the process chamber 100 . The opening is provided as a path through which the substrate W can enter the process chamber 100 . The opening is opened/closed by a door (not shown). An exhaust hole 102 is formed in the bottom surface of the process chamber 100 . The exhaust hole 102 is connected to the exhaust line 121 . The exhaust line 121 may be connected to the pressure reducing member 123 . The pressure reducing member 123 may be a pump. Reaction by-products generated during the process and gas remaining inside the process chamber 100 can be discharged to the outside through the exhaust line 121 .

In addition, the pressure of the processing space 101 can be maintained at the set pressure by the pressure reduction provided by the pressure reducing member 123 through the exhaust line 121 . The pressure of the processing space 101 can be maintained at a pressure close to vacuum. That is, the process chamber 100 may be a vacuum chamber in which the pressure of the processing space 101 is maintained at a pressure close to vacuum while the substrate W is being processed. For example, the control unit 500 to be described below may control the pressure reducing member so that the pressure of the processing space 101 is a pressure between 10 mTorr and 4 Torr (eg, 10 mTorr or more and 4 Torr or less).

The substrate supporting unit 200 is located inside the process chamber 100 . The substrate supporting unit 200 supports the substrate W. The substrate support unit 200 includes an electrostatic chuck for absorbing the substrate W by using electrostatic force.

The electrostatic chuck 200 includes a dielectric plate 210, a lower electrode 220, a heater 230, a support plate 240, an insulating plate 270 and a focusing ring 280.

Dielectric plate 210 is positioned at an upper portion of electrostatic chuck 200 . The dielectric plate 210 is configured as a dish-shaped dielectric substance. The substrate W is placed on the upper surface of the dielectric plate 210 . The upper surface of the dielectric plate 210 has a smaller radius than the radius of the substrate W. Therefore, the edge area of the substrate W is positioned outside the dielectric plate 210 . The first supply path 211 is formed in the dielectric plate 210 . The first supply path 211 is provided from the upper surface to the bottom surface of the dielectric plate 210 . A plurality of first supply paths 211 are formed simultaneously and spaced apart from each other, and are provided as channels through which the heat transfer medium is supplied to the bottom surface of the substrate W.

The lower electrode 220 and the heater 230 are embedded in the dielectric plate 210 . Lower electrode 220 is positioned above heater 230. The lower electrode 220 is electrically connected to the lower power supply 221 . The lower power supply 221 includes a DC power supply. The lower power switch 222 is installed between the lower electrode 220 and the lower power supply 221 . The lower electrode 220 can be electrically connected to the lower power supply 221 by turning on/off the lower power switch 222 . When the lower power switch 222 is turned on, DC current is supplied to the lower electrode 220 . Electric power acts between the lower electrode 220 and the substrate W by the current applied to the lower electrode 220, and the substrate W is absorbed to the dielectric plate 210 by the electric power.

The heater 230 may be a temperature adjustment component that adjusts the temperature of the substrate W to a set temperature. In addition, the substrate W is maintained at a predetermined temperature by the heat generated by the heater 230 . Heater 230 includes a helical coil. The heaters 230 may be embedded in the dielectric plate 210 at regular intervals. The heater 230 may heat by receiving power from the heater power supply 231 . In addition, a heater power switch 232 may be installed between the heater 230 and the heater power supply 231 . The heater 230 can be electrically connected to the heater power supply 231 by turning on/off the heater power switch 232 . In addition, the temperature of the heater 230 may change according to the amount of power applied to the heater 230 through the heater power supply 231. For example, the temperature of heater 230 may also increase in proportion to the amount of power applied to heater 230. In addition, the heater 230 may be connected to a heater sensor (not illustrated) that senses the temperature of the heater 230 . The heater sensor can detect the temperature of the heater 230 in real time, and transfer the detected real-time temperature of the heater 230 to the control unit 500 . The control unit 500 may change the amount of power transferred to the heater 230 based on the temperature of the heater 230 detected by the heater sensor.

The support plate 240 is located below the dielectric plate 210 . The bottom surface of the dielectric plate 210 and the upper surface of the support plate 240 can be bonded by an adhesive 236 . The support plate 240 may be made of aluminum. The upper surface of the support plate 240 may be stepped, so that the central area is higher than the edge area. The central area of the upper surface of the support plate 240 has an area corresponding to the bottom surface of the dielectric plate 210 and is coupled to the bottom surface of the dielectric plate 210 . The first circulation flow path 241 , the second circulation flow path 242 and the second supply flow path 243 are formed in the support plate 240 .

The first circulation flow path 241 is provided as a channel in which the heat transfer medium circulates. The first circulation flow path 241 may be formed in a spiral shape inside the support plate 240 . On the other hand, the first circulating flow path 241 may be configured such that annular flow paths with different radii have the same center. Each of the first circulating flow paths 241 may be connected to each other. The first circulation flow path 241 is formed at the same height.

The second circulation flow path 242 is provided as a channel in which the cooling fluid circulates. The second circulation flow path 242 may be formed in a spiral shape inside the support plate 240 . On the other hand, the second circulating flow path 242 may be configured such that annular flow paths with different radii have the same center. Each of the second circulating flow paths 242 may be in communication with each other. The second circulating flow path 242 may have a larger cross-sectional area than the first circulating flow path 241 . The second circulation flow path 242 is formed at the same height. The second circulating flow path 242 may be positioned below the first circulating flow path 241 .

The second supply flow path 243 extends from the first circulation flow path 241 in the upper direction and is provided to the upper surface of the support plate 240 . The second supply flow paths 243 are provided in a number corresponding to the number of the first supply flow paths 211 and connect the first circulation flow path 241 and the first supply flow path 211 .

The first circulation flow path 241 is connected to the heat transfer medium storage unit 252 via the heat transfer medium supply line 251 . The heat transfer medium is stored in the heat transfer medium storage unit 252 . Heat transfer media include inert gases. According to an exemplary embodiment, the heat transfer medium includes helium (He) gas. Helium gas is supplied to the first circulation flow path 241 through the supply line 251, and is supplied to the bottom surface of the substrate W by sequentially passing through the second supply flow path 243 and the first supply flow path 211. The helium gas acts as a medium through which the heat transferred from the plasma to the substrate W is transferred to the electrostatic chuck 200 . The ion particles contained in the plasma region are attracted to the electrostatic force formed in the electrostatic chuck 200 and move to the electrostatic chuck 200, and collide with the substrate W during the moving process, and perform the etching process. During the process of collision between ion particles and the substrate W, heat is generated in the substrate W. The heat generated in the substrate W is transferred to the electrostatic chuck 200 via helium gas supplied between the bottom surface of the substrate W and the upper surface of the dielectric plate 210 . Therefore, the substrate W can be maintained at the set temperature.

The second circulation flow path 242 is connected to the heat transfer medium storage unit 262 via the cooling fluid supply line 261 . Cooling fluid is stored in cooling fluid storage unit 262 . The cooler 263 may be provided inside the cooling fluid storage unit 262. The cooler 263 cools the cooling fluid to a predetermined temperature. In contrast, the cooler 263 may be mounted on the cooling fluid supply line 261 . The cooling fluid supplied to the second circulation flow path 242 via the cooling fluid supply line 261 cools the support plate 240 while circulating along the second circulation flow path 242 . The cooling of the support plate 240 cools the dielectric plate 210 and the substrate W together to maintain the substrate W at a predetermined temperature.

The insulating plate 270 is provided below the support plate 240. The size of the insulating plate 270 is set to correspond to the size of the support plate 240 . The insulating plate 270 is positioned between the support plate 240 and the bottom surface of the process chamber 100 . The insulating plate 270 is made of insulating material and electrically insulates the supporting plate 240 from the process chamber 100 .

The focus ring 280 is arranged in the edge region of the electrostatic chuck 200 . The focus ring 280 has a ring shape and is arranged along the circumference of the dielectric plate 210 . The upper surface of focus ring 280 may be stepped such that outer portion 280a is higher than inner portion 280b. The inner portion 280b of the focus ring 280 is positioned at the same height as the upper surface of the dielectric plate 210. The inner portion 280b of the focus ring 280 supports an edge region of the substrate W positioned outside the dielectric plate 210. The outer portion 280a of the focus ring 280 is disposed so as to surround the edge region of the substrate W. The focus ring 280 expands the electric field formation area so that the substrate W is positioned at the center of the area where plasma is formed. Therefore, plasma is formed uniformly throughout the entire area of the substrate W, and each area of the substrate W can be etched uniformly.

The gas supply unit 300 supplies process gas to the processing space 101 of the process chamber 100 . The gas supply unit 300 may supply process gas into the process chamber 100 through the gas supply hole 105 formed in the side wall of the process chamber 100 . The process gas supplied to the processing space 101 through the gas supply unit 300 may contain at least one gas selected from hydrogen and an inert gas. Inert gases may include helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn), and the like.

The microwave application unit 400 may be a gas excitation unit that applies microwaves to the processing space 101 of the process chamber 100 to excite the process gas. For example, the microwave application unit 400 can generate plasma by exciting process gases. The plasma excited from this process may contain hydrogen radicals. Hydrogen radicals may be transferred to the substrate W to remove impurities attached to the substrate W or to improve the roughness of the surface of the substrate W.

The microwave application unit 400 includes a microwave power supply 410, a waveguide 420, a microwave antenna 430, a dielectric block 450, an electrode plate 460, a dielectric plate 470 and a cooling plate 480.

The microwave power supply 410 generates microwaves. Waveguide 420 is connected to microwave power supply 410 and provides a path through which microwaves generated in microwave power supply 410 are transferred.

Microwave antenna 430 is positioned inside the front end of waveguide 420. Microwave antenna 430 applies microwaves transferred via waveguide 420 to process chamber 100 . For example, microwave antenna 430 may receive power applied by microwave power supply 410 and apply microwaves to processing space 101 .

The microwave antenna 430 includes an antenna 431, an antenna rod 433, an external conductor 434, a microwave adapter 436, a connector 441, a cooling plate 443 and an antenna height adjustment unit 445.

The antenna 431 is provided as a thin dish, and a plurality of slot holes 432 are formed. Slotted aperture 432 provides passage for microwaves therethrough. Slot hole 432 may be provided in various shapes. The slotted holes 432 may be configured in a shape such as "×", "+", and "-". The slotted holes 432 may be combined with each other and arranged into a plurality of ring shapes. Rings have the same center and different radii.

The antenna rod 433 is provided as a cylindrical rod. The longitudinal direction of the antenna rod 433 is arranged in the vertical direction. The antenna rod 433 is positioned in the upper part of the antenna 431, and the lower end of the antenna rod 433 is inserted and fixed to the center of the antenna 431. Antenna mast 433 propagates microwaves to antenna 431.

The outer conductor 434 is positioned below the front end of the waveguide 420. A space connected to the inner space of the waveguide 420 is formed inside the outer conductor 434 in the vertical direction. A partial area of the antenna mast 433 is positioned inside the outer conductor 434 .

Microwave adapter 436 is located inside the front end of waveguide 420. The microwave adapter 436 has a conical shape with an upper end having a larger radius than the lower end. At the lower end of the microwave adapter 436, a receiving space 437 with an open bottom is formed. The entrance 438 of the receiving space 437 has a relatively smaller radius than the radius of the interior area.

Connector 441 is positioned in receiving space 437 . The connector 441 is provided in a ring shape. The outer surface of the connector 441 has a radius corresponding to the radius of the inner surface of the receiving space 437 . The outer surface of the connector 441 is in contact with the inner surface of the receiving space 437 and is fixedly positioned. Connector 441 may be formed of conductive material. The upper end of the antenna rod 433 is positioned inside the receiving space 437 and fits into the inner area of the connector 441 . The upper end of the antenna rod 433 is forcibly fitted to the connector 441 and is electrically connected to the microwave adapter 436 via the connector 441 .

A cooling plate 443 is coupled to the upper end of the microwave adapter 436. The cooling plate 443 may be provided as a plate having a radius larger than the radius of the upper end of the microwave adapter 436. Cooling plate 443 may have a material that has superior thermal conductivity than microwave adapter 436 . The cooling plate 443 may be formed of copper (Cu) or aluminum (Al) material. The cooling plate 443 promotes cooling of the microwave adapter 436 to prevent thermal deformation of the microwave adapter 436.

The antenna height adjustment unit 445 connects the microwave adapter 436 and the antenna mast 433 . In addition, the antenna height adjustment unit 445 moves the antenna pole 433 so that the relative height of the antenna 431 and the microwave adapter 436 changes. The antenna height adjustment unit 445 includes bolts. The bolt is inserted into the microwave adapter 436 from the bottom of the top of the microwave adapter 436 in the vertical direction, and the lower end is located in the receiving space 437 . The bolt is inserted into the central area of the microwave adapter 436. The lower end of the bolt is inserted into the upper end of the antenna rod 433. In the upper end of the antenna rod 433, a screw groove into which the lower end of the bolt is inserted and fastened is formed to a predetermined length. The antenna rod 433 moves in the vertical direction along the rotation of the bolt. For example, when the bolt is rotated in a clockwise direction, the antenna rod 433 may move upward, and when the bolt is rotated in a counterclockwise direction, the antenna rod 433 may move downward. The antenna 431 can move in the vertical direction together with the movement of the antenna mast 433 .

Dielectric plate 470 is located above antenna 431. Dielectric plate 470 has a dielectric material such as alumina and quartz. The microwave propagating from the microwave antenna 430 in the vertical direction propagates in the radial direction of the dielectric plate 470 . The microwaves propagating to the dielectric plate 470 have compressed microwaves and are resonant. The resonant microwaves are transmitted to the slot hole 432 of the antenna 431.

The cooling plate 480 is provided above the dielectric plate 470. Cooling plate 480 cools dielectric plate 470. The cooling plate 480 may be made of aluminum material. The cooling plate 480 may cool the dielectric plate 470 by flowing a cooling fluid through a cooling flow path (not illustrated) formed therein. Cooling methods include water cooling and air cooling.

Dielectric block 450 is provided below antenna 431. Dielectric block 450 has a dielectric such as alumina and quartz. The microwaves passing through the slot hole 432 of the antenna 431 are radiated into the process chamber 100 through the dielectric block 450 . By the electric field irradiated with microwaves, the process gas supplied to the process chamber 100 is excited into a plasma state. The upper surface of the dielectric block 450 may be spaced apart from the bottom surface of the antenna 431 at a predetermined interval.

In the structure of the microwave antenna 430, the antenna height adjustment unit 445 limits the horizontal movement of the antenna rod 433. During the process of propagating microwaves, heat is generated in the microwave adapter 436 and the connector 441. The heat generated deforms the microwave adapter 436 and the connector 441, and the coupling between the antenna rod 433 and the connector 441 is loosened by the deformation, so that the antenna rod 433 can move in the horizontal direction. When the antenna mast 433 moves in the horizontal direction, the spacing between the microwave adapter 436 and the antenna mast 433 may vary depending on the zone. The difference in spacing makes the microwaves propagated to the antenna rod 433 uneven. In addition, when the antenna rod 433 contacts the microwave adapter 436 due to the movement of the antenna rod 433, an arc may be formed. The antenna height adjustment unit 445 limits the horizontal movement of the antenna rod 433 relative to the microwave adapter 436, thereby preventing the aforementioned problems caused by thermal deformation of the microwave adapter 436 and the connector 441.

In addition, the antenna height adjustment unit 445 can move the antenna rod 433 in the vertical direction, so that the relative height of the antenna 431 and the microwave adapter 436 changes. When the fit of the antenna rod 433 is loosened by thermal deformation of the microwave adapter 436 and the connector 441, the antenna 431 can contact the dielectric block 450 when the antenna rod 433 hangs down. Contact between antenna 431 and dielectric block 450 may also occur through the thermal shape of antenna 431. Contact between antenna 431 and dielectric block 450 results in loss of propagated microwaves. As described above, when contact between the antenna 431 and the dielectric block 450 occurs, the antenna height adjustment unit 445 may move the antenna rod 433 in the upper direction so that the antenna 431 and the dielectric block 450 maintain a predetermined distance. In addition, the antenna height adjustment unit 445 can maintain an appropriate distance between the antenna 431 and the dielectric block 450 by moving the antenna rod 433 in the vertical direction.

The control unit 500 may control the substrate processing equipment. The control unit 500 can control at least one of the substrate supporting unit 200, the gas supply unit 300, and the microwave application unit 400 of the substrate processing equipment, so that the substrate processing equipment performs the substrate processing method described below. In addition, the control unit 500 may include: a process controller formed by a microprocessor (computer) that performs control of the substrate processing equipment; and a user interface formed by a keyboard through which an operator performs operations Command input control and the like for managing substrate processing equipment; a display for visualizing and displaying the operation status of the substrate processing equipment or the like; and a storage unit for controlling the process controller or various data and programs A control program for executing processing performed in the substrate processing apparatus, that is, a processing program library for executing processing for each configuration according to processing conditions is stored in the storage unit. In addition, the user interface and storage unit can be connected to the process controller. The processing library may be stored in a storage medium in a storage unit, and the storage medium may be a hard disk, and may also be a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as a flash memory.

In addition, the control unit 500 can maintain the temperature of the substrate W at a set temperature by adjusting the amount of power transferred to the heater 230 through the heater power supply 231 . For example, the control unit 500 may identify the temperature of the heater 230 detected in real time by a heater sensor. In addition, parameters for changing the temperature of the substrate W according to the temperature of the heater 230 (these parameters are experimental data performed in advance) may be input to the control unit 500.

FIG. 2 is a flowchart illustrating a substrate processing method according to an exemplary embodiment of the present invention. Referring to FIG. 2 , a substrate processing method according to an exemplary embodiment of the present invention may include a first processing operation S10 and a second processing operation S20. The first processing operation S10 and the second processing operation S20 may be performed sequentially. For example, after the first processing operation S10 is performed, the second processing operation S20 may be performed. In addition, the substrate W processed through the first processing operation S10 and the second processing operation S20 may be made of a material including silicon (Si).

FIG. 3 is a diagram illustrating a substrate processing apparatus performing the first processing operation of FIG. 2 . Referring to FIG. 3 , the first processing operation S10 may be an impurity removal operation in which the remaining impurities I on the substrate W are removed. The impurity I removed in the first processing operation S10 may be a by-product produced when etching the substrate W, or a residual film formed on the substrate W that has not been removed by the etching process. For example, the impurity I attached to the substrate W may be a compound including germanium (Ge). For example, impurity I may include SiGe or GeO.

In the first processing operation S10, the control unit 500 may maintain the temperature of the substrate W at the first temperature by controlling the substrate supporting unit 200. The first temperature may be a temperature between 50°C and 300°C (eg, 50°C or higher and 300°C or lower). In addition, the remaining impurities I on the substrate W can be removed by maintaining the temperature of the substrate W at the first temperature while hydrogen radicals H excited by the process gas are transferred to the surface of the substrate W.

When the execution of the first processing operation S10 is completed, the impurities I attached to the substrate W can be removed from the substrate W, as shown in FIG. 4 .

FIG. 5 is a diagram illustrating a substrate processing apparatus performing the second processing operation of FIG. 2 . Referring to FIG. 5 , the second processing operation S20 may be a surface roughness improvement operation that reduces the surface roughness of the substrate W. The substrate W may be made of a material including silicon (Si) as described above.

In the second processing operation S20, the control unit 500 may maintain the temperature of the substrate W at a second temperature different from the first temperature by controlling the substrate supporting unit 200. The second temperature can be higher than the first temperature. The second temperature may be a temperature between 400°C and 700°C (eg, 400°C or higher and 700°C or lower). In addition, the surface roughness of the substrate W can be improved by changing the temperature of the substrate W from the first temperature to the second temperature, and by transferring the hydrogen radicals H excited by the process gas to the surface of the substrate W. At the same time, the temperature of the substrate W is maintained at the second temperature.

When the execution of the second processing operation S20 is completed, the impurities attached to the substrate W may be removed as shown in FIG. 6 . Furthermore, after the first processing operation S10 is performed, the second processing operation S20 is performed. That is, performing the second processing operation S20 in a state where the impurities are removed from the substrate W makes it possible to minimize the problem of performance degradation of the semiconductor device.

FIG. 7 is a graph showing the efficiency of removing impurities attached to a substrate by radicals according to the temperature of the substrate. Specifically, FIG. 7 is a graph showing the removal efficiency (etching rate) of the impurity I by hydrogen radical removal according to the temperature change of the substrate W when the impurity (I) attached to the substrate W is a compound containing germanium (Ge). .

Referring to FIG. 7 , the etching rate of a compound containing germanium (Ge) by hydrogen radicals is high between the first temperature T ₁ and the third temperature T ₃ , and is particularly highest at the second temperature T ₂ . The first temperature _T1 may be about 50°C, and the third temperature may be about 300°C. Additionally, the second temperature _T2 may be about 180°C. That is, in the case where the impurity I attached to the substrate W is a compound containing germanium (Ge), when the temperature of the substrate W is adjusted to about 180°C, the etching rate of the impurity I by hydrogen radicals is Highest. Therefore, in the first processing operation S10, it may be preferable that the temperature of the substrate W is maintained at about the 2-1 temperature (T _2-1 , for example, about 160° C.) or the 2-2 temperature (T _2-2 , for example, about 200°C).

That is, in the first processing operation S10 and the second processing operation S20 of the present invention, the temperature of the substrate W is maintained at the first temperature and the second temperature respectively. As mentioned above, the first temperature ranges from 50°C to 300°C, and the second temperature ranges from 400°C to 700°C.

The first temperature and the second temperature can be classified according to the dominant temperature zone in which silicon (Si) and germanium (Ge) become volatile species (SiH ₄ , GeH ₄ ). When silicon (Si) and germanium (Ge) react with hydrogen radicals to become volatile species, silicon (Si) and germanium (Ge) can be removed from the surface of the substrate W.

The temperature range in which germanium (Ge) is removed by hydrogen radicals can be from 50°C to 300°C. Specifically, the maximum temperature for the etching rate of germanium (Ge) by hydrogen radicals is about 180°C. Now, in the first processing operation S10, the impurity I including germanium (Ge) can be effectively removed from the substrate W.

In addition, in the first processing operation S10, it is preferable that the temperature of the substrate W does not exceed 300°C. For silicon (Si) forming the substrate W, the temperature range in which impurities are removed by hydrogen radicals H is about 300°C to 400°C, and when the temperature of the substrate W is not only due to the inclusion of germanium in the first processing operation S10 When the impurities of (Ge) are removed and the substrate W itself may be damaged and exceeds 300°C, the temperature of the substrate W exceeding 300°C is inappropriate.

In addition, in the second processing operation S20, the temperature of the substrate W is preferably maintained at about 400°C to about 700°C. As for silicon (Si), when the temperature of the substrate W is maintained at approximately 400°C to 700°C in a hydrogen radical H atmosphere, silicon (Si) improves the surface roughness of the substrate W through surface diffusion.

In addition, in the second processing operation S20, it is preferable that the temperature of the substrate W exceeds 400°C. For silicon (Si) forming the substrate W, the temperature range in which impurities are removed by hydrogen radicals H is about 300°C to 400°C, and when the temperature of the substrate W drops below At 400°C, the surface roughness of the substrate W will not be improved, but it may cause damage to the substrate W itself, making the temperature of the substrate W lower than 300°C inappropriate.

That is, in the method of processing a substrate according to an exemplary embodiment of the present invention, after performing the first processing operation S10 to remove impurities from the substrate W, the second processing operation S20 is performed to improve the surface roughness of the substrate W, This makes it possible to improve the surface roughness of the substrate W more efficiently. In addition, it is possible to process the substrate W more efficiently and effectively by adjusting the temperature of the substrate W to a temperature at which impurities are easily removed in the first processing operation S10; and adjusting the temperature of the substrate W to a temperature at which impurities are easily removed in the second processing operation S10. The temperature at which the surface roughness of the substrate W is easily improved in the processing operation S20.

In the following, application examples of the first processing operation S10 and the second processing operation S20 of the present invention will be described. As shown in FIG. 8 , a pattern P having a pin structure can be formed on the substrate W through patterning and etching processes. Impurity I containing germanium (Ge) may be attached to the pattern P.

When the first processing operation S10 is performed, the hydrogen radicals H are transferred to the substrate W, and the temperature of the substrate W can be maintained at the first temperature (see FIG. 8 ). When the execution of the first processing operation S10 is completed, the impurities I attached to the pattern P may be removed (see FIG. 9 ). In this case, the angle formed between the upper surface and the side surface of the pattern P may be the first angle A ₁ .

When the second processing operation S20 is performed, the hydrogen radicals H are transferred to the substrate W, and the temperature of the substrate W can be maintained at the second temperature (see FIG. 10 ). When the execution of the second processing operation S20 is completed, the surface roughness of the substrate W may be improved (see FIG. 11 ). In this case, the angle formed between the upper surface and the side surface of the pattern P may be a second angle A ₂ that is close to a right angle. That is, the form of the pattern P formed on the substrate W can also be improved through the second processing operation S20.

In addition, the hydrogen radical H has no directionality. Therefore, even in the case where the pattern P in the sheet-like structure having a space separated from the substrate W is formed on the substrate W as shown in FIG. 12 , the first processing operation S10 and the second processing operation S20 can be the same or Apply similarly.

When the first processing operation S10 is performed, the hydrogen radicals H are transferred to the substrate W, and the temperature of the substrate W can be maintained at the first temperature (see FIG. 10 ). When the execution of the first processing operation S10 is completed, the impurities I attached to the pattern P may be removed (see FIG. 11 ).

When the second processing operation S20 is performed, the hydrogen radicals H are transferred to the substrate W, and the temperature of the substrate W can be maintained at the second temperature (see FIG. 12 ). When the execution of the second processing operation S20 is completed, the surface roughness of the substrate W may be improved (see FIG. 12 ).

In the exemplary embodiment, the substrate support unit 200 is described as an electrostatic chuck, but in contrast, the substrate support unit may support the substrate through various methods. For example, the substrate support unit 200 may be configured as a vacuum chuck that absorbs the substrate and maintains the substrate in a vacuum.

The plasma including the hydrogen radical H can be a direct plasma or a remote plasma. The direct plasma can be generated directly within the processing space 101 and the remote plasma is generated outside the processing space 101 and introduced into the reaction chamber. In contrast, the method of generating plasma including hydrogen radical H can be various, such as radiofrequency (RF) plasma method, microwave plasma method, inductively coupled plasma method, capacitively coupled plasma method or electronic method. Cyclotron resonant plasma methods.

Furthermore, in the foregoing examples, the case where plasma including hydrogen radicals H is generated via microwaves has been described as an example, but the present invention is not limited thereto, and the foregoing exemplary embodiments can be applied to a device identically or similarly, The device includes a temperature regulating component that regulates the temperature of the substrate and a plasma source that generates plasma from process gas.

The foregoing detailed description illustrates the invention. Furthermore, the above shows and describes exemplary embodiments of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, the foregoing content may be modified or corrected within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the scope of the present disclosure, and/or the skill or knowledge in the art. The foregoing exemplary embodiments describe the best state of the technical spirit for implementing the present invention, and various changes required in the specific application fields and uses of the present invention are possible. Accordingly, the above detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should be construed to include other exemplary embodiments as well.

100: Process chamber 101: Processing space 102: Exhaust hole 105: Gas supply hole 121: Exhaust line 123: Pressure reducing member 210: Dielectric plate 211: First supply path 220: Lower electrode 221: Lower power supply 222 : Lower power switch 230: Heater 231: Heater power supply 232: Heater power switch 240: Support plate 241: First circulation flow path 242: Second circulation flow path 243: Second supply flow path 251: Heat transfer Medium supply line 252: heat transfer medium storage unit 261: cooling fluid supply line 262: cooling fluid storage unit 263: cooler 270: insulating plate 280: focus ring 280: outer part 280a: outer part 280b: outer part 300: gas supply Unit 410: Microwave power supply 420: Waveguide 430: Microwave antenna 431: Antenna 432: Slot hole 433: Antenna rod 434: External conductor 436: Microwave adapter 441: Connector 443: Cooling plate 445: Antenna height adjustment unit 470: Dielectric plate 480: cooling plate 500: control unit A ₁ : first angle A ₂ : second angle H: hydrogen radical I: impurity P: pattern S10: first processing operation S20: second processing operation T ₁ : second processing operation First temperature T ₂ : Second temperature T _2-1 : 2-1 temperature T _2-2 : 2-2 temperature T ₃ : Third temperature W: Substrate

FIG. 1 is a diagram illustrating a substrate processing apparatus according to an exemplary embodiment of the present invention. FIG. 2 is a flowchart illustrating a substrate processing method according to an exemplary embodiment of the present invention. FIG. 3 is a diagram illustrating a substrate processing apparatus performing the first processing operation of FIG. 2 . FIG. 4 is a view of the substrate after performing the second processing operation of FIG. 2 . FIG. 5 is a diagram illustrating a substrate processing apparatus performing the second processing operation of FIG. 2 . FIG. 6 is a view of the substrate after performing the second processing operation of FIG. 2 . FIG. 7 is a graph showing the efficiency of removing impurities attached to the substrate by radicals according to the temperature of the substrate. Figure 8 is a diagram illustrating a substrate on which a first processing operation is performed with fins formed on the substrate. Figure 9 is a diagram illustrating a substrate on which a first processing operation has been performed with fins formed on the substrate. Figure 10 is a diagram illustrating a substrate on which a second processing operation is performed with fins formed on the substrate. Figure 11 is a diagram illustrating a substrate on which a second processing operation has been performed with fins formed on the substrate. Figure 12 is a diagram illustrating a substrate on which a first processing operation is performed with sheet-like structures formed on the substrate. Figure 13 is a diagram illustrating a substrate on which a first processing operation has been performed with a sheet-like structure formed on the substrate. Figure 14 is a diagram illustrating a substrate on which a second processing operation is performed with sheet-like structures formed on the substrate. Figure 15 is a diagram illustrating a substrate on which a second processing operation has been performed with a sheet-like structure formed on the substrate.

100:Process room

101: Processing space

102:Exhaust hole

105:Gas supply hole

121:Exhaust line

123: Pressure reducing components

210:Dielectric board

211:First supply path

220:Lower electrode

221:Lower power supply

222:Lower power switch

230:Heater

231:Heater power supply

232: Heater power switch

240:Support plate

241: First circulation flow path

242: Second circulation flow path

243: Second supply flow path

251:Heat transfer medium supply line

252:Heat transfer medium storage unit

261: Cooling fluid supply line

262: Cooling fluid storage unit

263:Cooler

270:Insulation board

280:External part

280a: External part

280b:External part

300:Gas supply unit

410:Microwave power supply

420:Waveguide

430:Microwave antenna

431:antenna

432:Slotted hole

433:Antenna mast

434:External conductor

436:Microwave adapter

441:Connector

443:Cooling plate

445: Antenna height adjustment unit

470:Dielectric board

480:Cooling plate

500:Control unit

W: substrate

Claims (20)

An equipment for processing substrates. The aforementioned equipment includes: Process room, the aforementioned process room has processing space; A substrate support unit, the substrate support unit is configured to support the substrate in the processing space, and the substrate support unit includes a heater for adjusting the temperature of the substrate; a gas supply unit, the aforementioned gas supply unit being configured to supply process gas to the aforementioned processing space; a gas excitation unit configured to excite the process gas and generate free radicals; and control unit, wherein the aforementioned control unit controls the aforementioned gas supply unit and the aforementioned gas excitation unit so as to generate the aforementioned free radicals by supplying the aforementioned process gas to the aforementioned processing space, and The control unit controls the substrate support unit to adjust the temperature of the substrate to a first temperature, and then adjusts the temperature of the substrate to a third temperature different from the first temperature when the free radicals are transferred to the substrate. 2. Temperature. The apparatus according to claim 1, wherein the control unit controls the substrate support unit so that the second temperature is higher than the first temperature. The device according to claim 1, wherein the control unit controls the substrate support unit so that the first temperature is between 50°C and 300°C. The device according to claim 3, wherein the control unit controls the substrate support unit so that the second temperature is between 400°C and 700°C. The equipment of claim 1, wherein in the process chamber, at least one exhaust hole connected to an exhaust line for discharging the processing space is formed, and The control unit controls the pressure reducing component connected to the exhaust line so that the pressure of the processing space is between 10 mTorr and 4 Torr. The device according to any one of claims 1 to 5, wherein impurities containing germanium (Ge) are attached to the aforementioned substrate that has been subjected to the aforementioned radical treatment, and The aforementioned substrate is made of material containing silicon (Si). The equipment of claim 6, wherein the process gas supplied through the gas supply unit includes at least one selected from hydrogen and inert gas. The equipment according to any one of claims 1 to 5, wherein the aforementioned gas excitation unit includes: Microwave power supply; and A microwave antenna configured to receive power applied by the microwave power supply and apply microwaves to the processing space. A kind of substrate processing equipment. The aforementioned substrate processing equipment processes substrates with germanium (Ge) attached to the surface. The aforementioned substrate processing equipment includes: Process room, the aforementioned process room has processing space; A substrate support unit, the substrate support unit being configured to support the substrate in the processing space and including a temperature adjustment member for adjusting the temperature of the substrate; a gas supply unit, the aforementioned gas supply unit being configured to supply process gas containing hydrogen to the aforementioned processing space; A gas excitation unit configured to excite the process gas and generate hydrogen radicals; and control unit, Wherein the aforementioned control unit controls the aforementioned gas supply unit and the aforementioned gas excitation unit in order to perform the first processing operation and the second processing operation. In the aforementioned first processing operation, the aforementioned hydrogen radicals are transferred to the aforementioned substrate to remove the aforementioned germanium. In the aforementioned In the second treatment operation, the hydrogen radicals are transferred to the substrate to improve the surface roughness of the substrate. The substrate processing equipment of claim 9, wherein the control unit controls the substrate support unit so that the temperature of the substrate changes to the first temperature in the first processing operation, and the temperature of the substrate changes to the second temperature in the second processing operation. During the processing operation, a second temperature different from the aforementioned first temperature is obtained. The substrate processing equipment of claim 10, wherein the control unit controls the substrate support unit so that the second temperature is higher than the first temperature. The substrate processing equipment of claim 11, wherein the control unit controls the substrate support unit such that the first temperature is between 50°C and 300°C, and the second temperature is between 400°C and 700°C. . The substrate processing equipment according to claim 12, wherein, The aforementioned substrate is made of material containing silicon (Si). A method of processing a substrate. The method includes the following steps: A first processing operation, in which hydrogen radicals are transferred to a substrate whose temperature is adjusted to a first temperature to process the aforementioned substrate; and In the second processing operation, the hydrogen radicals are transferred to the substrate before the temperature is adjusted to a second temperature different from the first temperature to process the substrate. The method of claim 14, wherein the second temperature is higher than the first temperature. The method of claim 15, wherein the aforementioned first temperature is 50°C or higher and 300°C or lower. The method of claim 16, wherein the aforementioned second temperature is 400°C or higher and 700°C or lower. The method of any one of claims 14 to 17, wherein the pressure within the vacuum chamber providing the space in which the substrate is processed is 10 mTorr or more and 4 Torr or less. The method according to any one of claims 14 to 17, wherein in the first processing operation, impurities containing germanium (Ge) attached to the substrate are removed, and The second processing operation is performed after the first processing operation, and in the second processing operation, the surface roughness of the substrate made of a material containing silicon (Si) is improved. The method according to any one of claims 14 to 17, wherein the plasma including the hydrogen radicals is any one of direct plasma and remote plasma.