JP2023125683A - Heat treatment equipment and heat treatment method - Google Patents

Abstract

To provide heat treatment equipment and a heat treatment method that enable secure prevention of flowing of atmosphere including oxygen gas into chambers having low-oxygen atmosphere.SOLUTION: A transfer chamber 170 and a film thickness measurement chamber 301 are connected together through a gate valve 302. A gate valve 302 opens and closes an opening 350 in which the transfer chamber 170 and film thickness measurement chamber 301 are communicated with each other. A gas supply port 501 is provided nearby one longitudinal end portion of the opening 350, and an exhaust port 502 is provided nearby the other end portion. When the gate valve 302 opens the opening 350, a nitrogen gas jetted from the gas supply port 501 is sucked into the exhaust port 502, and as a result, curtain of the nitrogen gas covering the opening 350 is formed. A flow of the curtain of the nitrogen gas is parallel to a semiconductor wafer W transferred at the opening 350.SELECTED DRAWING: Figure 9

Description

The present invention relates to a heat treatment apparatus and a heat treatment method for performing heat treatment such as flash lamp annealing on a substrate. Substrates to be processed include, for example, semiconductor wafers, liquid crystal display substrates, flat panel display (FPD) substrates, optical disk substrates, magnetic disk substrates, solar cell substrates, and the like.

In the manufacturing process of semiconductor devices, flash lamp annealing (FLA), which heats semiconductor wafers in an extremely short period of time, is attracting attention. Flash lamp annealing is a process in which only the surface of a semiconductor wafer is extremely polished by irradiating the surface of the semiconductor wafer with flash light using a xenon flash lamp (hereinafter simply referred to as "flash lamp"). This is a heat treatment technology that raises the temperature in a short period of time (several milliseconds or less).

The radiation spectral distribution of a xenon flash lamp ranges from the ultraviolet region to the near-infrared region, which has a shorter wavelength than that of conventional halogen lamps and roughly matches the fundamental absorption band of silicon semiconductor wafers. Therefore, when a semiconductor wafer is irradiated with flash light from a xenon flash lamp, the amount of transmitted light is small and it is possible to rapidly raise the temperature of the semiconductor wafer. It has also been found that by irradiating flash light for an extremely short period of several milliseconds or less, it is possible to selectively raise the temperature only in the vicinity of the surface of the semiconductor wafer.

Such flash lamp annealing is used for processes that require very short heating times, such as typically for activating impurities implanted into semiconductor wafers. By irradiating the surface of a semiconductor wafer into which impurities have been implanted using the ion implantation method with flash light from a flash lamp, the surface of the semiconductor wafer can be heated to the activation temperature for a very short period of time, allowing the impurities to be deeply diffused. Therefore, only impurity activation can be performed without activating the impurity.

Generally, a processing chamber that performs heat treatment such as flash lamp annealing requires an atmosphere with a low oxygen concentration. Furthermore, an atmosphere with a low oxygen concentration is required in a transfer chamber that handles high-temperature semiconductor wafers immediately after heat treatment. For this reason, not only the processing chamber and the transfer chamber are maintained at a low oxygen concentration, but also the chambers adjacent thereto are kept in a sealed structure and nitrogen gas is constantly supplied to create a low oxygen concentration atmosphere.

However, depending on the type of chamber, it is difficult to make the structure airtight, and therefore, there are some chambers in which it is difficult to maintain a low oxygen concentration above a certain level. As a technique for preventing oxygen gas from being drawn into a chamber having a relatively low oxygen concentration atmosphere from a relatively high oxygen concentration atmosphere, Patent Document 1 proposes forming an inert gas curtain in front of the opening of the chamber. ing.

JP2002-75888A

However, in the technique disclosed in Patent Document 1, since a curtain is formed that extends in the vertical direction, the curtain may be blocked by an object to be processed such as a semiconductor wafer. In this case, a problem arises in that the curtain cannot provide the effect of blocking the atmosphere, and it becomes impossible to prevent oxygen gas from flowing into the chamber having a low oxygen concentration atmosphere.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a heat treatment apparatus and a heat treatment method that can reliably prevent the inflow of an atmosphere containing oxygen gas.

In order to solve the above problem, the invention according to claim 1 provides a heat treatment apparatus that performs heat treatment on a substrate, including a first chamber provided with a transfer robot that transfers the substrate, and a second chamber connected to the first chamber. a chamber; a gate valve provided at a connecting portion between the first chamber and the second chamber to open and close an opening communicating the first chamber and the second chamber; and a gate valve configured to cover the opening. The exhaust section includes a gas supply section that spouts active gas, and an exhaust section that sucks and exhausts the inert gas spouted from the gas supply section, and the exhaust section sucks and exhausts the inert gas spouted from the gas supply section. By suctioning, a curtain of inert gas is formed covering the opening, and the flow of the curtain from the gas supply section to the exhaust section is directed by the transport robot through the opening and into the first The gas supply unit is parallel to the substrate being transferred between the chamber and the second chamber, and the gas supply unit blows out the inert gas only when the gate valve opens the opening.

Further, the invention of claim 2 is the heat treatment apparatus according to the invention of claim 1, wherein the gas supply section includes a first gas supply port provided in the first chamber and a first gas supply port provided in the second chamber. The exhaust section includes a second gas supply port, and the exhaust section includes a first exhaust port provided in the first chamber and a second exhaust port provided in the second chamber. A first curtain of inert gas is formed on the first chamber side by suction of the inert gas ejected from the second gas supply port, and the inert gas ejected from the second gas supply port is sucked by the first exhaust port. A second curtain of inert gas is formed on the second chamber side by suction from the second exhaust port.

Further, the invention of claim 3 is characterized in that, in the heat treatment apparatus according to the invention of claim 2, the flow direction of the first curtain and the flow direction of the second curtain are opposite to each other. .

Further, the invention according to claim 4 is the heat treatment apparatus according to any one of claims 1 to 3, wherein the length of the opening parallel to the flow of the curtain is equal to the length of the opening perpendicular to the flow of the curtain. It is characterized by being longer than the width of the opening.

Further, the invention according to claim 5 is the heat treatment apparatus according to any one of claims 1 to 4, wherein the second chamber is a film thickness measurement unit that measures the thickness of a thin film formed on a substrate. Alternatively, the present invention is characterized by having a backside inspection unit that inspects flaws on the backside of the substrate.

Further, the invention according to claim 6 is the heat treatment apparatus according to any one of claims 1 to 5, wherein the first chamber includes a processing chamber for performing heat treatment on the substrate by irradiating the substrate with light. are further connected.

Moreover, the invention according to claim 7 is the heat treatment apparatus according to any one of claims 1 to 6, characterized in that the curtain flows in a horizontal direction.

Moreover, the invention according to claim 8 is characterized in that, in the heat treatment apparatus according to any one of claims 1 to 7, the inert gas ejected by the gas supply section is nitrogen gas.

Further, the invention according to claim 9 provides a heat treatment method for performing heat treatment on a substrate, in which a connecting portion between a first chamber provided with a transfer robot for conveying the substrate and a second chamber connected to the first chamber is provided. an opening step in which a gate valve provided in the opening opens an opening that communicates the first chamber and the second chamber; and an inert gas that covers the opening only when the gate valve opens the opening. a curtain forming step of forming a curtain of It is characterized by being parallel to the substrates being transported between them.

Further, the invention of claim 10 is the heat treatment method according to the invention of claim 9, wherein in the curtain forming step, a first curtain of inert gas is formed on the first chamber side, and a first curtain of inert gas is formed on the second chamber side. forming a second curtain of inert gas.

Further, the invention of claim 11 is characterized in that in the heat treatment method according to the invention of claim 10, the flow direction of the first curtain and the flow direction of the second curtain are opposite to each other. .

Further, the invention of claim 12 is the heat treatment method according to any one of claims 9 to 11, wherein the length of the opening parallel to the flow of the curtain is the length of the opening perpendicular to the flow of the curtain. It is characterized by being longer than the width of the opening.

Further, the invention according to claim 13 is the heat treatment method according to any one of claims 9 to 12, in which the second chamber measures the thickness of a thin film formed on the substrate or scratches on the back surface of the substrate. It is characterized by the following tests being carried out.

In addition, the invention of claim 14 is the heat treatment method according to any one of claims 9 to 13, wherein the first chamber includes a processing chamber for heating the substrate by irradiating the substrate with light. are further connected.

Moreover, the invention according to claim 15 is the heat treatment method according to any one of claims 9 to 14, characterized in that the curtain flows in a horizontal direction.

Moreover, the invention of claim 16 is characterized in that in the heat treatment method according to any one of claims 9 to 15, the inert gas forming the curtain is nitrogen gas.

According to the invention of claims 1 to 8, an inert gas curtain is formed that covers the opening that communicates the first chamber and the second chamber, and the flow of the curtain is parallel to the substrate being transported. , the flow of the curtain is not obstructed by the substrate, and the inflow of atmosphere containing oxygen gas can be reliably prevented.

In particular, according to the invention of claim 2, the first curtain of inert gas is formed on the first chamber side, and the second curtain of inert gas is formed on the second chamber side, so that oxygen gas is It is possible to more reliably prevent the inflow of the containing atmosphere.

In particular, according to the invention of claim 3, since the direction of flow of the first curtain and the direction of flow of the second curtain are opposite, the first curtain and the second curtain have mutual atmospheres. The blocking effects will complement each other, and the inflow of an atmosphere containing oxygen gas can be more reliably prevented.

According to the invention of claims 9 to 16, an inert gas curtain is formed that covers the opening that communicates the first chamber and the second chamber, and the flow of the curtain is parallel to the substrate being transported. , the flow of the curtain is not obstructed by the substrate, and the inflow of atmosphere containing oxygen gas can be reliably prevented.

In particular, according to the tenth aspect of the invention, the first curtain of inert gas is formed on the first chamber side, and the second curtain of inert gas is formed on the second chamber side, so that oxygen gas is It is possible to more reliably prevent the inflow of the containing atmosphere.

In particular, according to the eleventh aspect of the invention, since the direction of flow of the first curtain and the direction of flow of the second curtain are opposite, the first curtain and the second curtain have mutually different atmospheres. The blocking effects will complement each other, and the inflow of an atmosphere containing oxygen gas can be more reliably prevented.

FIG. 1 is a plan view showing a heat treatment apparatus according to the present invention. FIG. 3 is a longitudinal cross-sectional view showing the configuration of a heat treatment section. It is a perspective view showing the whole appearance of a holding part. FIG. 3 is a plan view of a susceptor. It is a sectional view of a susceptor. It is a top view of a transfer mechanism. It is a side view of a transfer mechanism. FIG. 3 is a plan view showing the arrangement of a plurality of halogen lamps. FIG. 3 is a diagram showing a mechanism for supplying inert gas to a film thickness measurement chamber and a transfer chamber. FIG. 3 is a view of the opening viewed from the transfer chamber side. It is a figure which shows the curtain formation mechanism in 2nd Embodiment.

Embodiments of the present invention will be described in detail below with reference to the drawings. In the following, expressions indicating relative or absolute positional relationships (for example, "in one direction", "along one direction", "parallel", "orthogonal", "centered", "concentric", "coaxial") , etc.), unless otherwise specified, not only strictly represent their positional relationship, but also represent a state in which they are relatively displaced in terms of angle or distance within a range that allows tolerance or equivalent functionality to be obtained. Furthermore, unless otherwise specified, expressions indicating equal conditions (e.g., "same," "equal," "homogeneous," etc.) do not only refer to quantitatively strictly equal conditions, but also to tolerances or the same condition. It also represents a state in which there is a difference in the degree of function obtained. Furthermore, unless otherwise specified, expressions that indicate shapes (e.g., "circular shape," "square shape," "cylindrical shape," etc.) do not only strictly represent the shape geometrically; It represents the shape of the range in which the effect can be obtained, and may have, for example, unevenness or chamfering. In addition, expressions such as "comprising," "comprising," "equipment," "containing," and "having" a component are not exclusive expressions that exclude the presence of other components. In addition, the expression "at least one of A, B, and C" includes "only A," "only B," "only C," "any two of A, B, and C," and " All of A, B and C" are included.

<First embodiment>
FIG. 1 is a plan view showing a heat treatment apparatus 100 according to the present invention. The heat treatment apparatus 100 is a flash lamp annealing apparatus that irradiates a disk-shaped semiconductor wafer W as a substrate with flash light to heat the semiconductor wafer W. The size of the semiconductor wafer W to be processed is not particularly limited, but is, for example, φ300 mm or φ450 mm. Note that in FIG. 1 and the subsequent figures, the dimensions and numbers of each part are exaggerated or simplified as necessary for easy understanding. Further, in order to clarify the directional relationship between them, an XYZ orthogonal coordinate system is shown in FIGS. 1 and 2 in which the Z-axis direction is the vertical direction and the XY plane is the horizontal plane.

The heat treatment apparatus 100 includes an indexer section 110 for carrying unprocessed semiconductor wafers W into the apparatus from the outside and carrying processed semiconductor wafers W out of the apparatus, and an alignment section for positioning the unprocessed semiconductor wafers W. 230, a warp measuring unit 290 that measures the warp of the semiconductor wafer W, two cooling units 130 and 140 that performs the cooling process of the semiconductor wafer W after the heat treatment, a film that measures the thickness of the thin film formed on the semiconductor wafer W; It includes a thickness measurement section 300, an inspection section 400 that inspects the back surface of the semiconductor wafer W, and a heat treatment section 160 that performs flash heat treatment on the semiconductor wafer W. The heat treatment apparatus 100 also includes a transfer robot 150 that transfers the semiconductor wafer W to and from the cooling units 130 and 140, the film thickness measurement unit 300, the inspection unit 400, and the heat treatment unit 160. Further, the heat treatment apparatus 100 includes a control section 3 that controls the operating mechanisms and the transfer robot 150 provided in each of the processing sections described above to advance the flash heat treatment of the semiconductor wafer W.

The indexer section 110 is arranged at an end of the heat treatment apparatus 100. The indexer unit 110 includes three load ports 111 and a delivery robot 120. The three load ports 111 are arranged side by side along the Y-axis direction at the end of the heat treatment apparatus 100. One carrier C can be placed in each load port 111. Therefore, a maximum of three carriers C are placed on the indexer section 110. The carrier C containing unprocessed semiconductor wafers W is transported by an automatic guided vehicle (AGV, OHT) or the like and placed on the load port 111 . Further, the carrier C containing the processed semiconductor wafer W is also removed from the load port 111 by the automatic guided vehicle. Note that a dummy carrier containing a dummy wafer may be placed in one of the three load ports 111.

Further, in the load port 111, the carrier C is configured to be movable up and down so that the delivery robot 120 can load or unload any semiconductor wafer W from the carrier C. Note that the carrier C can take the form of a FOUP (front opening unified pod) that stores the semiconductor wafer W in a closed space, a SMIF (standard mechanical interface) pod, or an OC (open open pod) that exposes the stored semiconductor wafer W to the outside air. cassette).

The delivery robot 120 is configured to be able to slide along the Y-axis direction, rotate around the Z-axis, and move up and down along the Z-axis. Further, the delivery robot 120 moves the hand 121 back and forth. Thereby, the delivery robot 120 takes the semiconductor wafer W in and out of the carrier C placed on any load port 111, and also delivers the semiconductor wafer W to the alignment section 230 and the warpage measurement section 290. . The delivery robot 120 takes the semiconductor wafer W into and out of the carrier C by sliding the hand 121 and moving the carrier C up and down. Further, the semiconductor wafer W is transferred between the transfer robot 120 and the alignment section 230 or the warp measurement section 290 by sliding the hand 121 and moving the transfer robot 120 up and down.

The alignment section 230 and the warpage measurement section 290 are installed so as to be sandwiched between the indexer section 110 and the transfer chamber 170 and connect them. The alignment unit 230 is a processing unit that rotates the semiconductor wafer W in a horizontal plane to orient it in an appropriate direction for flash heating. The alignment unit 230 includes a mechanism that supports and rotates the semiconductor wafer W in a horizontal position, and a notch, an orientation flat, etc. formed on the periphery of the semiconductor wafer W, inside an alignment chamber 231 that is a housing made of aluminum alloy. It is constructed by providing a mechanism for optically detecting.

A gate valve 232 is provided at a connecting portion between the alignment chamber 231 and the indexer section 110. The opening that communicates the alignment chamber 231 and the indexer section 110 can be opened and closed by a gate valve 232. On the other hand, a gate valve 233 is provided at a connecting portion between the alignment chamber 231 and the transfer chamber 170. An opening that communicates the alignment chamber 231 and the transfer chamber 170 can be opened and closed by a gate valve 233. That is, the alignment chamber 231 and the indexer section 110 are connected through a gate valve 232, and the alignment chamber 231 and the transfer chamber 170 are connected through a gate valve 233.

When transferring the semiconductor wafer W between the indexer section 110 and the alignment chamber 231, the gate valve 232 is opened. Further, when transferring the semiconductor wafer W between the alignment chamber 231 and the transfer chamber 170, the gate valve 233 is opened. When the gate valve 232 and the gate valve 233 are closed, the inside of the alignment chamber 231 becomes a sealed space.

In the alignment section 230, the semiconductor wafer W received from the delivery robot 120 of the indexer section 110 is rotated around a vertical axis with the center of the semiconductor wafer W as a rotation center, and the semiconductor wafer W is rotated by optically detecting a notch or the like. Adjust the orientation. The semiconductor wafer W whose orientation has been adjusted is taken out from the alignment section 230 by the transfer robot 150.

The warpage measuring section 290 is a processing section that measures the warpage of the semiconductor wafer W after the heat treatment. The warpage measurement unit 290 is configured by providing a mechanism for holding the semiconductor wafer W, a mechanism for optically detecting the warpage of the semiconductor wafer W, etc. inside a warpage measurement chamber 291 which is a housing made of aluminum alloy. Ru.

A gate valve 292 is provided at a connecting portion between the warp measurement chamber 291 and the indexer section 110. An opening that communicates the warp measurement chamber 291 and the indexer section 110 can be opened and closed by a gate valve 292. On the other hand, a gate valve 293 is provided at a connecting portion between the warpage measurement chamber 291 and the transfer chamber 170. An opening that communicates the warp measurement chamber 291 and the transfer chamber 170 can be opened and closed by a gate valve 293. That is, the warp measurement chamber 291 and the indexer section 110 are connected through a gate valve 292, and the warp measurement chamber 291 and the transfer chamber 170 are connected through a gate valve 293.

When transferring the semiconductor wafer W between the indexer section 110 and the warpage measurement chamber 291, the gate valve 292 is opened. Further, when transferring the semiconductor wafer W between the warpage measurement chamber 291 and the transfer chamber 170, the gate valve 293 is opened. When the gate valve 292 and the gate valve 293 are closed, the inside of the warp measurement chamber 291 becomes a sealed space.

The warpage measurement unit 290 optically measures the wafer warpage occurring in the heat-treated semiconductor wafer W received from the transfer robot 150. The semiconductor wafer W whose warpage has been measured is taken out from the warp measurement section 290 by the delivery robot 120 of the indexer section 110.

The transfer robot 150 is housed within the transfer chamber 170. Around the transfer chamber 170, there is an alignment chamber 231, a warp measurement chamber 291, a cool chamber 131 of the cooling section 130, a cool chamber 141 of the cooling section 140, a film thickness measurement chamber 301 of the film thickness measurement section 300, and an inspection section 400. The chamber 401 and the processing chamber 6 of the heat treatment section 160 are connected.

The transfer robot 150 provided in the transfer chamber 170 is capable of rotating around an axis (Z-axis) along the vertical direction as shown by an arrow 150R. The transfer robot 150 has two link mechanisms made up of a plurality of arm segments, and transfer hands 151a and 151b that hold semiconductor wafers W are provided at the tips of these two link mechanisms, respectively. These transport hands 151a, 151b are arranged vertically apart from each other by a predetermined pitch, and are capable of independently sliding linearly in the same horizontal direction by a link mechanism. Further, the transfer robot 150 moves the two transfer hands 151a and 151b up and down while maintaining a predetermined pitch apart by moving up and down a base provided with two link mechanisms.

The transfer robot 150 transfers (takes in and out of) the semiconductor wafer W as the alignment chamber 231, warp measurement chamber 291, cool chambers 131, 141, film thickness measurement chamber 301, inspection chamber 401, or the processing chamber 6 of the heat treatment section 160. In this case, first, both transfer hands 151a and 151b turn so as to face the delivery partner. Thereafter (or while the transfer robot 150 is rotating), the transfer robot 150 moves the transfer hands 151a and 151b up and down to position one of the transfer hands at the same height as the opening of the delivery partner. Then, the transfer robot 150 linearly slides the transfer hand 151a (151b) in the horizontal direction to transfer the semiconductor wafer W to the transfer partner.

The heat treatment section 160, which is the main part of the heat treatment apparatus 100, is a substrate processing section that performs flash heat treatment by irradiating flash light (flash light) from a xenon flash lamp FL onto a preheated semiconductor wafer W. A gate valve 185 is provided between the transfer chamber 170 and the processing chamber 6 of the heat processing section 160. When transferring the semiconductor wafer W between the processing chamber 6 of the heat processing section 160 and the transfer chamber 170, the gate valve 185 is opened. The detailed configuration of the heat treatment section 160 will be described further later.

The two cooling units 130 and 140 have substantially the same configuration. The cooling units 130 and 140 each include a metal cooling plate and a quartz plate placed on the top surface of the cool chamber 131 and 141, which are aluminum alloy housings (both not shown). . The temperature of the cooling plate is controlled to room temperature (approximately 23° C.) by a Peltier device or constant temperature water circulation. The semiconductor wafer W subjected to the flash heat treatment in the heat treatment section 160 is carried into the cool chamber 131 or the cool chamber 141, placed on the quartz plate, and cooled.

Gate valves 132 and 142 are provided at the connection portions between the cool chamber 131 and the cool chamber 141 and the transfer chamber 170, respectively. An opening that communicates between the cool chamber 131 and the transfer chamber 170 can be opened and closed by a gate valve 132. On the other hand, an opening that communicates between the cool chamber 141 and the transfer chamber 170 can be opened and closed by a gate valve 142. That is, the cool chamber 131 and the transfer chamber 170 are connected via the gate valve 132, and the cool chamber 141 and the transfer chamber 170 are connected via the gate valve 142.

When transferring the semiconductor wafer W between the cool chamber 131 of the cooling unit 130 and the transfer chamber 170, the gate valve 132 is opened. Further, when transferring the semiconductor wafer W between the cool chamber 141 of the cooling unit 140 and the transfer chamber 170, the gate valve 142 is opened. When the gate valves 132, 142 are closed, the interiors of the cool chambers 131, 141 become sealed spaces.

The film thickness measurement unit 300 measures the thickness of a thin film formed on the semiconductor wafer W using, for example, a spectroscopic ellipsometry analysis technique. The film thickness measurement unit 300 includes a mounting table that supports the semiconductor wafer W, an optical unit, and the like inside a film thickness measurement chamber 301 that is a housing made of aluminum alloy. The optical unit of the spectroscopic ellipsometer allows light to enter the surface of the semiconductor wafer W supported on the mounting table, and receives reflected light reflected from the surface. The optical unit measures the amount of change in polarization of the reflected light for each wavelength, and determines the thickness of the thin film formed on the surface of the semiconductor wafer W based on the obtained measurement data. Note that the film thickness measuring section 300 is not limited to the above spectroscopic ellipsometer, but may be an optical interference type film thickness measuring device.

A gate valve 302 is provided at a connecting portion between the film thickness measurement chamber 301 and the transfer chamber 170. An opening (opening 350 in FIG. 9) that communicates the film thickness measurement chamber 301 and the transfer chamber 170 can be opened and closed by a gate valve 302. That is, the film thickness measurement chamber 301 and the transfer chamber 170 are connected via the gate valve 302. When transferring the semiconductor wafer W between the film thickness measurement chamber 301 of the film thickness measurement section 300 and the transfer chamber 170, the gate valve 302 is opened.

The inspection unit 400 inspects the back surface of the semiconductor wafer W for flaws. The inspection section 400 includes a predetermined inspection unit inside an inspection chamber 401 that is a housing made of aluminum alloy. The inspection unit is equipped with, for example, an imaging camera, and performs predetermined image analysis processing on the image data obtained by imaging the backside of the semiconductor wafer W with the imaging camera, thereby inspecting the backside of the semiconductor wafer W for flaws. .

A gate valve 402 is provided at a connecting portion between the inspection chamber 401 and the transfer chamber 170 of the inspection section 400 . An opening that communicates the inspection chamber 401 and the transfer chamber 170 can be opened and closed by a gate valve 402. That is, the inspection chamber 401 and the transfer chamber 170 are connected via the gate valve 402. When transferring the semiconductor wafer W between the inspection chamber 401 of the inspection section 400 and the transfer chamber 170, the gate valve 402 is opened.

The heat treatment apparatus 100 has a so-called cluster tool structure in which a plurality of chambers are arranged around a transfer chamber 170. The transport robot 150 and the delivery robot 120 constitute a transport mechanism that transports the semiconductor wafer W from the carrier C to each processing section such as the heat processing section 160. The transport robot 150 is also a central robot that is located at the center of the cooling units 130, 140, the film thickness measurement unit 300, the inspection unit 400, and the heat treatment unit 160 and transports the semiconductor wafer W to each of these processing units. The semiconductor wafer W is transferred between the transfer robot 150 and the delivery robot 120 via the alignment section 230 and the warp measurement section 290. Specifically, the transfer robot 150 receives the unprocessed semiconductor wafer W that the transfer robot 120 has passed to the alignment chamber 231, and the transfer robot 120 receives the processed semiconductor wafer W that the transfer robot 150 has transferred to the warp measurement chamber 291. receives. That is, the alignment chamber 231 functions as a pass for the semiconductor wafer W on its outward journey, and the warpage measurement chamber 291 functions as a pass for the semiconductor wafer W on its return journey.

Next, the configuration of the heat treatment section 160 will be explained. FIG. 2 is a longitudinal cross-sectional view showing the configuration of the heat treatment section 160. The heat treatment section 160 includes a processing chamber 6 that accommodates a semiconductor wafer W and performs heat treatment, a flash lamp house 5 that contains a plurality of flash lamps FL, and a halogen lamp house 4 that contains a plurality of halogen lamps HL. Be prepared. A flash lamp house 5 is provided on the upper side of the processing chamber 6, and a halogen lamp house 4 is provided on the lower side. The heat treatment section 160 also includes a holding section 7 that holds the semiconductor wafer W in a horizontal position inside the processing chamber 6, and a transfer mechanism 10 that transfers the semiconductor wafer W between the holding section 7 and the transfer robot 150. and.

The processing chamber 6 is constructed by mounting chamber windows made of quartz on the upper and lower sides of a cylindrical chamber side part 61. The chamber side part 61 has a generally cylindrical shape with an open top and bottom, and the upper opening is fitted with an upper chamber window 63 and closed, and the lower opening is fitted with a lower chamber window 64 and closed. ing. The upper chamber window 63 configuring the ceiling of the processing chamber 6 is a disk-shaped member made of quartz, and functions as a quartz window that transmits flash light emitted from the flash lamp FL into the processing chamber 6 . Further, the lower chamber window 64 configuring the floor of the processing chamber 6 is also a disc-shaped member made of quartz, and functions as a quartz window that transmits light from the halogen lamp HL into the processing chamber 6 .

Further, a reflection ring 68 is attached to the upper part of the inner wall surface of the chamber side part 61, and a reflection ring 69 is attached to the lower part. The reflection rings 68 and 69 are both formed in an annular shape. The upper reflective ring 68 is attached by fitting it into the chamber side part 61 from above. On the other hand, the lower reflective ring 69 is attached by fitting it from the lower side of the chamber side part 61 and fastening it with a screw (not shown). That is, the reflection rings 68 and 69 are both removably attached to the chamber side part 61. The inner space of the processing chamber 6 , that is, the space surrounded by the upper chamber window 63 , the lower chamber window 64 , the chamber side portion 61 , and the reflective rings 68 and 69 is defined as a heat processing space 65 .

By attaching the reflective rings 68 and 69 to the chamber side portion 61, a recess 62 is formed in the inner wall surface of the processing chamber 6. That is, a recess 62 is formed, which is surrounded by the central portion of the inner wall surface of the chamber side portion 61 where the reflective rings 68 and 69 are not attached, the lower end surface of the reflective ring 68, and the upper end surface of the reflective ring 69. . The recess 62 is formed in an annular shape along the horizontal direction on the inner wall surface of the processing chamber 6, and surrounds the holding part 7 that holds the semiconductor wafer W. The chamber side portion 61 and the reflection rings 68, 69 are made of a metal material (for example, stainless steel) with excellent strength and heat resistance.

Furthermore, a transport opening (furnace opening) 66 for carrying in and out of the processing chamber 6 the semiconductor wafer W is formed in the chamber side part 61 . The transport opening 66 can be opened and closed by a gate valve 185. The conveyance opening 66 is connected to the outer peripheral surface of the recess 62 . Therefore, when the gate valve 185 opens the transfer opening 66, the semiconductor wafer W is carried into the heat treatment space 65 from the transfer opening 66 through the recess 62, and the semiconductor wafer W is carried out from the heat treatment space 65. It can be performed. Further, when the gate valve 185 closes the transfer opening 66, the heat treatment space 65 in the processing chamber 6 becomes a sealed space.

Further, the chamber side portion 61 is provided with a through hole 61a and a through hole 61b. The through hole 61a is a cylindrical hole for guiding infrared light emitted from the upper surface of a semiconductor wafer W held by a susceptor 74, which will be described later, to the infrared sensor 29 of the upper radiation thermometer 25. On the other hand, the through hole 61b is a cylindrical hole for guiding infrared light emitted from the lower surface of the semiconductor wafer W to the infrared sensor 24 of the lower radiation thermometer 20. The through holes 61a and the through holes 61b are provided to be inclined with respect to the horizontal direction so that the axes of the through holes intersect with the main surface of the semiconductor wafer W held by the susceptor 74. A transparent window 26 made of calcium fluoride material that transmits infrared light in a wavelength range that can be measured by the upper radiation thermometer 25 is attached to the end of the through hole 61a facing the heat treatment space 65. Furthermore, a transparent window 21 made of barium fluoride material that transmits infrared light in a wavelength range that can be measured by the lower radiation thermometer 20 is attached to the end of the through hole 61b facing the heat treatment space 65. .

Further, a gas supply hole 81 for supplying a processing gas to the heat treatment space 65 is formed in the upper part of the inner wall of the processing chamber 6 . The gas supply hole 81 is formed above the recess 62 and may be provided in the reflection ring 68. The gas supply hole 81 is connected to a gas supply pipe 83 via a buffer space 82 formed in an annular shape inside the side wall of the processing chamber 6 . Gas supply pipe 83 is connected to processing gas supply source 85 . Further, a valve 84 is inserted in the middle of the gas supply pipe 83. When the valve 84 is opened, processing gas is supplied from the processing gas supply source 85 to the buffer space 82 . The processing gas that has flowed into the buffer space 82 flows to expand within the buffer space 82 , which has a lower fluid resistance than the gas supply hole 81 , and is supplied from the gas supply hole 81 into the heat treatment space 65 . Processing gases include inert gases such as nitrogen (N ₂ ), argon (Ar), and helium (He), or hydrogen (H ₂ ), ammonia (NH ₃ ), oxygen (O ₂ ), and ozone (O _{3 )} . ), nitric oxide (NO), nitrous oxide (N ₂ O), and nitrogen dioxide (NO ₂ ) (in this embodiment, nitrogen) can be used.

On the other hand, a gas exhaust hole 86 is formed in the lower part of the inner wall of the processing chamber 6 to exhaust the gas in the heat treatment space 65. The gas exhaust hole 86 is formed at a lower position than the recess 62 and may be provided in the reflective ring 69. The gas exhaust hole 86 is connected to a gas exhaust pipe 88 via a buffer space 87 formed in an annular shape inside the side wall of the processing chamber 6 . Gas exhaust pipe 88 is connected to exhaust mechanism 190. Further, a valve 89 is inserted in the middle of the gas exhaust pipe 88. When the valve 89 is opened, the gas in the heat treatment space 65 is discharged from the gas exhaust hole 86 through the buffer space 87 to the gas exhaust pipe 88 . Note that a plurality of gas supply holes 81 and gas exhaust holes 86 may be provided along the circumferential direction of the processing chamber 6, or may be slit-shaped. Further, the processing gas supply source 85 and the exhaust mechanism 190 may be mechanisms provided in the heat treatment apparatus 100, or may be utilities of a factory where the heat treatment apparatus 100 is installed.

Further, a gas exhaust pipe 191 for exhausting gas in the heat treatment space 65 is also connected to the tip of the transport opening 66 . Gas exhaust pipe 191 is connected to exhaust mechanism 190 via valve 192. By opening the valve 192, the gas in the processing chamber 6 is evacuated via the transfer opening 66.

FIG. 3 is a perspective view showing the overall appearance of the holding section 7. As shown in FIG. The holding section 7 includes a base ring 71, a connecting section 72, and a susceptor 74. The base ring 71, the connecting portion 72, and the susceptor 74 are all made of quartz. That is, the entire holding portion 7 is made of quartz.

The base ring 71 is a quartz member having an arcuate shape with a portion missing from the annular shape. This missing portion is provided to prevent interference between the transfer arm 11 of the transfer mechanism 10 and the base ring 71, which will be described later. By being placed on the bottom of the recess 62, the base ring 71 is supported by the wall of the processing chamber 6 (see FIG. 2). A plurality of connecting portions 72 (four in this embodiment) are erected on the upper surface of the base ring 71 along the circumferential direction of the annular shape. The connecting portion 72 is also a quartz member and is fixed to the base ring 71 by welding.

The susceptor 74 is supported by four connecting parts 72 provided on the base ring 71. FIG. 4 is a plan view of the susceptor 74. Further, FIG. 5 is a cross-sectional view of the susceptor 74. The susceptor 74 includes a holding plate 75, a guide ring 76, and a plurality of substrate support pins 77. The holding plate 75 is a substantially circular flat plate member made of quartz. The diameter of the holding plate 75 is larger than the diameter of the semiconductor wafer W. That is, the holding plate 75 has a larger planar size than the semiconductor wafer W.

A guide ring 76 is installed at the upper peripheral edge of the holding plate 75. The guide ring 76 is an annular member having an inner diameter larger than the diameter of the semiconductor wafer W. For example, when the diameter of the semiconductor wafer W is 300 mm, the inner diameter of the guide ring 76 is 320 mm. The inner periphery of the guide ring 76 has a tapered surface that becomes wider upward from the holding plate 75. The guide ring 76 is made of quartz like the holding plate 75. The guide ring 76 may be welded to the upper surface of the holding plate 75, or may be fixed to the holding plate 75 using a separately machined pin or the like. Alternatively, the holding plate 75 and the guide ring 76 may be processed as an integral member.

A region of the upper surface of the holding plate 75 inside the guide ring 76 is a planar holding surface 75a that holds the semiconductor wafer W. A plurality of substrate support pins 77 are provided upright on the holding surface 75a of the holding plate 75. In this embodiment, a total of 12 substrate support pins 77 are provided upright every 30° along a circumference concentric with the outer circumference of the holding surface 75a (inner circumference of the guide ring 76). The diameter of the circle in which the 12 substrate support pins 77 are arranged (the distance between the opposing substrate support pins 77) is smaller than the diameter of the semiconductor wafer W, and if the diameter of the semiconductor wafer W is φ300 mm, it is φ270 mm to φ280 mm (in this implementation). The shape is φ270mm). Each substrate support pin 77 is made of quartz. The plurality of substrate support pins 77 may be provided on the upper surface of the holding plate 75 by welding, or may be processed integrally with the holding plate 75.

Returning to FIG. 3, the four connecting parts 72 erected on the base ring 71 and the peripheral edge of the holding plate 75 of the susceptor 74 are fixed by welding. That is, the susceptor 74 and the base ring 71 are fixedly connected by the connecting portion 72. By supporting the base ring 71 of the holding section 7 on the wall surface of the processing chamber 6, the holding section 7 is attached to the processing chamber 6. When the holding unit 7 is attached to the processing chamber 6, the holding plate 75 of the susceptor 74 is in a horizontal position (a position in which the normal line coincides with the vertical direction). That is, the holding surface 75a of the holding plate 75 is a horizontal surface.

The semiconductor wafer W carried into the processing chamber 6 is placed and held in a horizontal position on the susceptor 74 of the holding section 7 attached to the processing chamber 6. At this time, the semiconductor wafer W is supported by twelve substrate support pins 77 erected on the holding plate 75 and held by the susceptor 74. More precisely, the upper ends of the twelve substrate support pins 77 contact the lower surface of the semiconductor wafer W to support the semiconductor wafer W. Since the height of the 12 substrate support pins 77 (the distance from the upper end of the substrate support pin 77 to the holding surface 75a of the holding plate 75) is uniform, the semiconductor wafer W is held in a horizontal position by the 12 substrate support pins 77. can be supported.

Further, the semiconductor wafer W is supported by a plurality of substrate support pins 77 at a predetermined distance from the holding surface 75a of the holding plate 75. The thickness of the guide ring 76 is greater than the height of the substrate support pin 77. Therefore, the guide ring 76 prevents the semiconductor wafer W supported by the plurality of substrate support pins 77 from shifting in the horizontal direction.

Further, as shown in FIGS. 3 and 4, an opening 78 is formed in the holding plate 75 of the susceptor 74 so as to pass through the holding plate 75 vertically. The opening 78 is provided so that the lower radiation thermometer 20 receives radiation light (infrared light) emitted from the lower surface of the semiconductor wafer W. That is, the lower radiation thermometer 20 receives the light emitted from the lower surface of the semiconductor wafer W through the transparent window 21 installed in the opening 78 and the through hole 61b of the chamber side 61, and the temperature of the semiconductor wafer W is measured. Measure. Furthermore, four through holes 79 are formed in the holding plate 75 of the susceptor 74, through which lift pins 12 of a transfer mechanism 10, which will be described later, pass through to transfer the semiconductor wafer W.

FIG. 6 is a plan view of the transfer mechanism 10. Moreover, FIG. 7 is a side view of the transfer mechanism 10. The transfer mechanism 10 includes two transfer arms 11. The transfer arm 11 has an arcuate shape along the generally annular recess 62 . Two lift pins 12 are provided upright on each transfer arm 11. Each transfer arm 11 is rotatable by a horizontal movement mechanism 13. The horizontal movement mechanism 13 moves the pair of transfer arms 11 to a transfer operation position (solid line position in FIG. 6) where the semiconductor wafer W is transferred to the holding part 7 and a position where the semiconductor wafer W held by the holding part 7 is moved. It is horizontally moved between the retracted positions (positions indicated by two-dot chain line in FIG. 6) where they do not overlap in plan view. The transfer operation position is below the susceptor 74, and the retracted position is outside the susceptor 74. The horizontal movement mechanism 13 may be one in which each transfer arm 11 is rotated by an individual motor, or one in which a pair of transfer arms 11 are rotated in conjunction with one motor using a link mechanism. It may be something that moves.

Further, the pair of transfer arms 11 are moved up and down together with the horizontal movement mechanism 13 by the lifting mechanism 14 . When the lifting mechanism 14 raises the pair of transfer arms 11 to the transfer operation position, a total of four lift pins 12 pass through the through holes 79 (see FIGS. 3 and 4) drilled in the susceptor 74, and the lift pins The upper end of 12 protrudes from the upper surface of susceptor 74. On the other hand, when the lifting mechanism 14 lowers the pair of transfer arms 11 at the transfer operation position and extracts the lift pin 12 from the through hole 79, and the horizontal movement mechanism 13 moves the pair of transfer arms 11 to open, each The transfer arm 11 moves to the retreat position. The retracted position of the pair of transfer arms 11 is directly above the base ring 71 of the holding section 7 . Since the base ring 71 is placed on the bottom surface of the recess 62, the retracted position of the transfer arm 11 is inside the recess 62. Note that an exhaust mechanism (not shown) is also provided near the parts where the drive parts (horizontal movement mechanism 13 and lifting mechanism 14) of the transfer mechanism 10 are provided, and the atmosphere around the drive parts of the transfer mechanism 10 is is configured to be discharged to the outside of the processing chamber 6.

As shown in FIG. 2, the processing chamber 6 is provided with two radiation thermometers (pyrometers in this embodiment): an upper radiation thermometer 25 and a lower radiation thermometer 20. The upper radiation thermometer 25 is installed obliquely above the semiconductor wafer W held by the susceptor 74, and measures the temperature of the upper surface by receiving infrared light emitted from the upper surface of the semiconductor wafer W. The infrared sensor 29 of the upper radiation thermometer 25 is equipped with an InSb (indium antimony) optical element so as to be able to cope with rapid temperature changes on the upper surface of the semiconductor wafer W at the moment when the flash light is irradiated. On the other hand, the lower radiation thermometer 20 is provided diagonally below the semiconductor wafer W held by the susceptor 74, and measures the temperature of the lower surface by receiving infrared light emitted from the lower surface of the semiconductor wafer W.

The flash lamp house 5 provided above the processing chamber 6 has a light source consisting of a plurality of (30 in this embodiment) xenon flash lamps FL inside a housing 51, and a light source that covers the upper part of the light source. A reflector 52 is provided. Furthermore, a lamp light emitting window 53 is attached to the bottom of the casing 51 of the flash lamp house 5. The lamp light emitting window 53 constituting the floor of the flash lamp house 5 is a plate-shaped quartz window made of quartz. By installing the flash lamp house 5 above the processing chamber 6, the lamp light emission window 53 faces the upper chamber window 63. The flash lamp FL irradiates the heat processing space 65 with flash light from above the processing chamber 6 through the lamp light emission window 53 and the upper chamber window 63.

The plurality of flash lamps FL are rod-shaped lamps each having an elongated cylindrical shape, and each of the flash lamps FL has its longitudinal direction along the main surface of the semiconductor wafer W held by the holding part 7 (that is, along the horizontal direction). They are arranged in a plane so that they are parallel to each other. Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane.

The xenon flash lamp FL consists of a rod-shaped glass tube (discharge tube) that is filled with xenon gas and has an anode and a cathode connected to a condenser at both ends, and a tube that is attached to the outer circumferential surface of the glass tube. and a trigger electrode. Since xenon gas is an electrical insulator, no electricity will flow inside the glass tube under normal conditions even if a charge is stored in the capacitor. However, when a high voltage is applied to the trigger electrode to break down the insulation, the electricity stored in the capacitor instantly flows into the glass tube, and the excitation of xenon atoms or molecules at that time causes light to be emitted. In such a xenon flash lamp FL, the electrostatic energy previously stored in the capacitor is converted into extremely short light pulses of 0.1 milliseconds to 100 milliseconds, so it cannot be lit continuously like a halogen lamp HL. It has the characteristic of being able to emit extremely strong light compared to a light source. That is, the flash lamp FL is a pulsed light emitting lamp that emits light instantaneously in an extremely short period of less than one second. Note that the light emission time of the flash lamp FL can be adjusted by the coil constant of the lamp power supply that supplies power to the flash lamp FL.

Further, the reflector 52 is provided above the plurality of flash lamps FL so as to cover them entirely. The basic function of the reflector 52 is to reflect the flash light emitted from the plurality of flash lamps FL toward the heat treatment space 65 side. The reflector 52 is formed of an aluminum alloy plate, and its surface (the surface facing the flash lamp FL) is roughened by blasting.

The halogen lamp house 4 provided below the processing chamber 6 houses a plurality of (40 in this embodiment) halogen lamps HL inside a housing 41. The plurality of halogen lamps HL irradiate light from below the processing chamber 6 to the heat processing space 65 through the lower chamber window 64 .

FIG. 8 is a plan view showing the arrangement of a plurality of halogen lamps HL. In this embodiment, 20 halogen lamps HL are arranged in each of the upper and lower two stages. Each halogen lamp HL is a rod-shaped lamp having an elongated cylindrical shape. The 20 halogen lamps HL in both the upper and lower stages are arranged so that their longitudinal directions are parallel to each other along the main surface of the semiconductor wafer W held by the holding part 7 (that is, along the horizontal direction). There is. Therefore, the plane formed by the arrangement of the halogen lamps HL in both the upper and lower stages is a horizontal plane.

Furthermore, as shown in FIG. 8, the arrangement density of the halogen lamps HL in the region facing the peripheral portion of the semiconductor wafer W held by the holding portion 7 is higher than that in the region facing the center portion of the semiconductor wafer W held by the holding portion 7 in both the upper and lower stages. There is. That is, in both the upper and lower stages, the arrangement pitch of the halogen lamps HL is shorter at the periphery than at the center of the lamp array. Therefore, a larger amount of light can be irradiated onto the peripheral edge of the semiconductor wafer W, where the temperature tends to drop during heating by light irradiation from the halogen lamp HL.

Further, a lamp group consisting of the upper stage halogen lamps HL and a lamp group consisting of the lower stage halogen lamps HL are arranged so as to intersect in a grid pattern. That is, a total of 40 halogen lamps HL are arranged so that the longitudinal direction of each halogen lamp HL in the upper stage is perpendicular to the longitudinal direction of each halogen lamp HL in the lower stage.

The halogen lamp HL is a filament-type light source that generates light by energizing a filament disposed inside a glass tube to make the filament incandescent and emit light. The inside of the glass tube is filled with a gas made by introducing a small amount of halogen elements (iodine, bromine, etc.) into an inert gas such as nitrogen or argon. By introducing a halogen element, it becomes possible to set the temperature of the filament to a high temperature while suppressing breakage of the filament. Therefore, the halogen lamp HL has a longer lifespan than a normal incandescent light bulb and has the characteristics of being able to continuously emit intense light. That is, the halogen lamp HL is a continuously lit lamp that emits light continuously for at least one second or more. Further, since the halogen lamp HL is a rod-shaped lamp, it has a long life, and by arranging the halogen lamp HL along the horizontal direction, the radiation efficiency toward the semiconductor wafer W above becomes excellent.

Further, a reflector 43 is also provided within the housing 41 of the halogen lamp house 4 below the two-stage halogen lamp HL (FIG. 2). The reflector 43 reflects the light emitted from the plurality of halogen lamps HL toward the heat treatment space 65 side.

The control unit 3 controls the various operating mechanisms described above provided in the heat treatment apparatus 100. The hardware configuration of the control unit 3 is similar to that of a general computer. That is, the control unit 3 includes a CPU, which is a circuit that performs various calculation processes, a ROM, which is a read-only memory that stores basic programs, a RAM, which is a readable and writable memory that stores various information, and control software and data. It has a magnetic disk for storing data. Processing in the heat treatment apparatus 100 progresses as the CPU of the control unit 3 executes a predetermined processing program. Although the control section 3 is shown in the indexer section 110 in FIG. 1, the control section 3 is not limited to this, and the control section 3 can be placed at any position within the heat treatment apparatus 100.

In addition to the above configuration, the heat treatment section 160 prevents excessive temperature rise in the halogen lamp house 4, flash lamp house 5, and processing chamber 6 due to thermal energy generated from the halogen lamp HL and flash lamp FL during heat treatment of the semiconductor wafer W. Therefore, it is equipped with various cooling structures. For example, a water cooling pipe (not shown) is provided on the wall of the processing chamber 6 . Further, the halogen lamp house 4 and the flash lamp house 5 have an air-cooled structure that forms a gas flow inside to exhaust heat. Furthermore, air is also supplied to the gap between the upper chamber window 63 and the lamp light emission window 53 to cool the flash lamp house 5 and the upper chamber window 63.

An atmosphere with a low oxygen concentration is required within the processing chamber 6 in which the semiconductor wafer W is subjected to heat treatment. For this reason, high-purity nitrogen gas is supplied into the processing chamber 6 through the gas supply hole 81, and exhaust is performed through the gas exhaust hole 86 to maintain the inside of the processing chamber 6 in a low oxygen concentration atmosphere.

Further, since the transfer robot 150 receives the semiconductor wafer W at a relatively high temperature after the heat treatment from the processing chamber 6 and transfers it, an atmosphere with a low oxygen concentration is required within the transfer chamber 170 as well. Therefore, when the gate valves 132, 142, 302, 402 are opened, the cool chambers 131, 141, film thickness measurement chamber 301, and inspection chamber 401, which are in communication with the transfer chamber 170, have a low oxygen concentration atmosphere. Desired.

Of these, the cool chambers 131 and 141 are sealed chambers, so they maintain a low oxygen concentration atmosphere inside the chambers by supplying high-purity clean nitrogen gas into the chambers and exhausting the chambers. be able to. On the other hand, since the film thickness measurement chamber 301 and the inspection chamber 401 are provided with an optical unit, an imaging camera, etc., it is difficult to make them into sealed chambers. Therefore, it is difficult to maintain a low oxygen concentration atmosphere inside the chambers simply by supplying high-purity nitrogen gas to the film thickness measurement chamber 301 and the inspection chamber 401. As a result, when the gate valve 302 or the gate valve 402 is opened, an atmosphere containing oxygen gas flows into the transfer chamber 170 from the film thickness measurement chamber 301 or the inspection chamber 401, and the oxygen concentration in the transfer chamber 170 increases. is assumed. In this case, there is a possibility that unintended oxidation may occur in the relatively high temperature semiconductor wafer W after the heat treatment. Therefore, in this embodiment, the openings that communicate the film thickness measurement chamber 301 and the inspection chamber 401 with the transfer chamber 170 are covered with an inert gas curtain.

FIG. 9 is a diagram showing a mechanism for supplying inert gas to the film thickness measurement chamber 301 and the transfer chamber 170. The transfer chamber (first chamber) 170 and the film thickness measurement chamber (second chamber) 301 are connected via a gate valve 302. That is, a gate valve 302 is provided at a connecting portion between the transfer chamber 170 and the film thickness measurement chamber 301. An opening that communicates between the transport chamber 170 and the film thickness measurement chamber 301 by an opening 175 formed in the transport chamber 170 (an opening facing the film thickness measurement chamber 301) and an opening 305 formed in the film thickness measurement chamber 301. 350 are configured. Gate valve 302 opens and closes opening 350.

FIG. 10 is a diagram of the opening 350 viewed from the transfer chamber 170 side. As shown in FIG. 10, the shape of the opening 350 when viewed from the front is a horizontally long rectangular shape in which the length in the horizontal direction is longer than the width in the vertical direction. A gas supply port 501 is provided near one end in the longitudinal direction of the opening 350, and an exhaust port 502 is provided near the other end. In the first embodiment, a gas supply port 501 and an exhaust port 502 are provided in the transfer chamber 170. That is, the gas supply port 501 and the exhaust port 502 are provided on the transfer chamber 170 side of both sides of the opening 350 .

Returning to FIG. 9, the tip of the pipe 610 is connected to the film thickness measurement chamber 301, and the base end is connected to the inert gas supply source 601. A mass flow controller 611 and an air supply valve 612 are provided along the route of the piping 610. When the air supply valve 612 is opened, nitrogen gas (N ₂ ) as an inert gas is supplied from the inert gas supply source 601 to the film thickness measurement chamber 301 . The flow rate of the supplied nitrogen gas is adjusted by a mass flow controller 611.

Furthermore, the exhaust line 690 and the film thickness measurement chamber 301 are connected by a pipe 618. The gas discharged from the film thickness measurement chamber 301 into the pipe 618 is exhausted to the exhaust equipment via the exhaust line 690.

The tip of the pipe 620 is connected to the transfer chamber 170, and the base end is connected to the inert gas supply source 601. A mass flow controller 621 and an air supply valve 622 are provided along the route of the piping 620. When the air supply valve 622 is opened, nitrogen gas is supplied from the inert gas supply source 601 to the transfer chamber 170. The flow rate of the supplied nitrogen gas is adjusted by a mass flow controller 621.

Further, the exhaust line 690 and the transfer chamber 170 are connected by a pipe 628. The gas discharged from the transfer chamber 170 into the pipe 628 is exhausted to the exhaust equipment via the exhaust line 690.

Further, the tip of the pipe 630 is connected to the gas supply port 501, and the base end is connected to the inert gas supply source 601. A mass flow controller 631 and an air supply valve 632 are provided along the route of the piping 630. When the air supply valve 632 is opened, nitrogen gas is supplied from the inert gas supply source 601 to the gas supply port 501. The flow rate of the supplied nitrogen gas is adjusted by a mass flow controller 631.

On the other hand, the exhaust port 502 is connected to an exhaust line 690 by a pipe 638. An exhaust valve 639 is provided along the route of the pipe 638. When the exhaust valve 639 is opened, gas is exhausted from the exhaust port 502 to the exhaust line 690 via the piping 638.

When both the air supply valve 632 and the exhaust valve 639 are opened, nitrogen gas is ejected from the gas supply port 501 in the horizontal direction so as to cover the opening 350, and the nitrogen gas ejected from the gas supply port 501 is Gas is drawn through exhaust port 502. When the exhaust port 502 sucks nitrogen gas ejected from the gas supply port 501, a curtain of nitrogen gas covering the opening 350 is formed. This curtain of nitrogen gas flows along the horizontal direction. Therefore, the length of the opening 350 parallel to the flow of the nitrogen gas curtain is longer than the width of the opening 350 perpendicular to the flow of the curtain.

By forming a nitrogen gas curtain to cover the opening 350, the atmosphere inside the film thickness measurement chamber 301 and the atmosphere inside the transfer chamber 170 are cut off. Thereby, it is possible to prevent an atmosphere containing oxygen gas from flowing into the transfer chamber 170 from inside the film thickness measurement chamber 301, and it is possible to suppress an increase in the oxygen concentration in the transfer chamber 170. Note that although the above description has been made regarding the atmosphere isolation between the film thickness measurement chamber 301 and the transfer chamber 170, the atmosphere isolation is also achieved between the inspection chamber 401 and the transfer chamber 170 using a similar configuration.

Next, the processing operation of the heat processing apparatus 100 according to the present invention will be explained. The processing procedure of the semiconductor wafer W described below proceeds as the control unit 3 controls each operating mechanism of the heat treatment apparatus 100.

First, a plurality of unprocessed silicon semiconductor wafers W housed in a carrier C are placed on one of the three load ports 111 of the indexer section 110. Then, the delivery robot 120 takes out the unprocessed semiconductor wafer W from the carrier C. The delivery robot 120 carries the semiconductor wafer W taken out from the carrier C into the alignment chamber 231 of the alignment section 230. At this time, by opening the gate valve 232, the atmosphere flows into the alignment chamber 231 from the indexer section 110, and the oxygen concentration in the alignment chamber 231 temporarily increases. After the semiconductor wafer W is carried into the alignment chamber 231, the gate valve 232 is closed to supply nitrogen into the alignment chamber 231 and exhaust the internal atmosphere, thereby creating a nitrogen atmosphere in the alignment chamber 231 and reducing the oxygen concentration. descend. Note that the gate valve 233 remains closed.

The alignment unit 230 rotates the semiconductor wafer W carried into the alignment chamber 231 around a vertical axis in a horizontal plane with its center as the rotation center, and optically detects a notch or the like to determine the orientation of the semiconductor wafer W. Adjust.

Next, the gate valve 233 is opened and the transfer robot 150 carries out the semiconductor wafer W from the alignment chamber 231 to the transfer chamber 170. Then, the gate valve 302 opens the opening 350, and the transfer robot 150 carries the semiconductor wafer W into the film thickness measurement chamber 301.

When the gate valve 302 closes the opening 350, the air supply valve 632 and the exhaust valve 639 are closed, so that no nitrogen gas is ejected from the gas supply port 501, and no nitrogen gas curtain is formed. Then, only when the gate valve 302 opens the opening 350, the control unit 3 opens the air supply valve 632 and the exhaust valve 639 to blow out nitrogen gas from the gas supply port 501. Nitrogen gas ejected from the gas supply port 501 is sucked by the exhaust port 502. As a result, a curtain of nitrogen gas covering the opening 350 is formed only when the gate valve 302 opens the opening 350. Note that regardless of whether the gate valve 302 is opened or closed, the air supply valve 612 and the air supply valve 622 are normally always open, and the inside of the film thickness measurement chamber 301 and the inside of the transfer chamber 170 are constantly purged with nitrogen.

Even if it is purged with nitrogen, the film thickness measurement chamber 301 cannot have a closed chamber structure, so the oxygen concentration in the film thickness measurement chamber 301 is higher than the oxygen concentration in the transfer chamber 170. When the gate valve 302 opens the opening 350, a nitrogen gas curtain covering the opening 350 is formed, thereby preventing an atmosphere containing oxygen gas from flowing into the transfer chamber 170 from inside the film thickness measurement chamber 301. be able to. Thereby, an increase in oxygen concentration within the transfer chamber 170 can be suppressed.

The transport robot 150 transports the semiconductor wafer W from the transport chamber 170 into the film thickness measurement chamber 301 with a nitrogen gas curtain covering the opening 350 formed. The transport robot 150 transports the semiconductor wafer W in a horizontal position. A curtain of nitrogen gas also flows along the horizontal direction. Therefore, as shown in FIG. 10, the flow of the nitrogen gas curtain is parallel to the semiconductor wafer W transferred by the transfer robot 150 from the transfer chamber 170 to the film thickness measurement chamber 301 via the opening 350.

If a nitrogen gas curtain is formed that flows in the vertical direction (vertical direction), the flow of the nitrogen gas curtain will be perpendicular to the semiconductor wafer W, and the nitrogen gas curtain will be transported. It will be blocked by the semiconductor wafer W. Then, a part of the opening 350 is no longer covered by the nitrogen gas curtain, and the atmosphere containing oxygen gas in the film thickness measurement chamber 301 flows into the transfer chamber 170 from that part. In this embodiment, the flow of the nitrogen gas curtain is parallel to the semiconductor wafer W transported from the transport chamber 170 to the film thickness measurement chamber 301, so that the nitrogen gas curtain is not blocked by the semiconductor wafer W being transported. There isn't. As a result, the opening 350 is reliably covered by the nitrogen gas curtain even when the semiconductor wafer W is being transported, and it is possible to more reliably prevent an atmosphere containing oxygen gas from flowing into the transport chamber 170.

The film thickness measurement unit 300 measures the thickness of the thin film formed on the surface of the semiconductor wafer W carried into the film thickness measurement chamber 301. In this step, the film thickness measurement unit 300 measures the film thickness of the semiconductor wafer W before being subjected to heat treatment in the heat treatment unit 160. A natural oxide film is formed on the surface of the silicon semiconductor wafer W even before the heat treatment, and the film thickness measurement section 300 measures the thickness of the natural oxide film. Note that during film thickness measurement, since the gate valve 302 closes the opening 350, the atmosphere does not flow into the transfer chamber 170 from the film thickness measurement chamber 301, and the nitrogen gas blowout from the gas supply port 501 is stopped. ing.

After the pre-processing film thickness measurement is completed, the gate valve 302 opens the opening 350 again, and the transport robot 150 transports the semiconductor wafer W from the film thickness measurement chamber 301 to the transport chamber 170. At this time as well, a curtain of nitrogen gas is formed to cover the opening 350, thereby preventing an atmosphere containing oxygen gas from flowing into the transfer chamber 170 from within the film thickness measurement chamber 301.

Next, the gate valve 402 is opened, and the transfer robot 150 carries the semiconductor wafer W from the transfer chamber 170 into the inspection chamber 401. Also at this time, when the gate valve 402 opens the opening that communicates the transfer chamber 170 and the inspection chamber 401, a curtain of nitrogen gas is formed to cover the opening. This can prevent an atmosphere containing oxygen gas from flowing into the transfer chamber 170 from the inspection chamber 401.

The inspection unit 400 inspects the back surface of the semiconductor wafer W carried into the inspection chamber 401 for flaws. Gate valve 402 is closed during backside inspection. After the backside inspection of the semiconductor wafer W is completed, the gate valve 402 is opened again and the transfer robot 150 carries out the semiconductor wafer W from the inspection chamber 401 to the transfer chamber 170. At this time as well, a nitrogen gas curtain is formed to prevent an atmosphere containing oxygen gas from flowing into the transfer chamber 170 from inside the inspection chamber 401. Then, the gate valve 185 is opened and the transfer robot 150 carries the semiconductor wafer W into the processing chamber 6 of the heat processing section 160.

Prior to carrying the semiconductor wafer W into the processing chamber 6, the air supply valve 84 is opened, and the exhaust valves 89 and 192 are opened to start supplying and exhausting air into the processing chamber 6. When the valve 84 is opened, nitrogen gas is supplied from the gas supply hole 81 to the heat treatment space 65 . Further, when the valve 89 is opened, the gas inside the processing chamber 6 is exhausted from the gas exhaust hole 86. As a result, the nitrogen gas supplied from the upper part of the heat treatment space 65 in the processing chamber 6 flows downward and is exhausted from the lower part of the heat treatment space 65. Furthermore, by opening the valve 192, the gas in the processing chamber 6 is also exhausted from the transfer opening 66. Further, the atmosphere around the drive section of the transfer mechanism 10 is also exhausted by an exhaust mechanism (not shown).

Subsequently, the gate valve 185 is opened to open the transfer opening 66, and the semiconductor wafer W to be processed is carried into the heat treatment space 65 in the processing chamber 6 by the transfer robot 150 via the transfer opening 66. The transfer robot 150 advances the transfer hand 151a (or transfer hand 151b) holding the unprocessed semiconductor wafer W to a position directly above the holding section 7 and stops it. When the pair of transfer arms 11 of the transfer mechanism 10 horizontally move from the retracted position to the transfer operation position and rise, the lift pins 12 pass through the through holes 79 and protrude from the upper surface of the holding plate 75 of the susceptor 74. and receives the semiconductor wafer W. At this time, the lift pins 12 rise above the upper ends of the substrate support pins 77.

After the unprocessed semiconductor wafer W is placed on the lift pins 12, the transfer robot 150 moves the transfer hand 151a out of the heat treatment space 65, and the gate valve 185 closes the transfer opening 66. Then, by lowering the pair of transfer arms 11, the semiconductor wafer W is transferred from the transfer mechanism 10 to the susceptor 74 of the holding section 7, and is held from below in a horizontal position. The semiconductor wafer W is supported by a plurality of substrate support pins 77 erected on the holding plate 75 and held by the susceptor 74 . Further, the semiconductor wafer W is held by the holding unit 7 with the surface to be processed as the upper surface. A predetermined distance is formed between the back surface (main surface opposite to the front surface) of the semiconductor wafer W supported by the plurality of substrate support pins 77 and the holding surface 75a of the holding plate 75. The pair of transfer arms 11 that have descended below the susceptor 74 are moved to a retracted position, that is, inside the recess 62, by the horizontal movement mechanism 13.

After the semiconductor wafer W is carried into the processing chamber 6 and held by the susceptor 74, the 40 halogen lamps HL are turned on all at once to start preheating (assist heating). The halogen light emitted from the halogen lamp HL passes through the lower chamber window 64 and the susceptor 74 formed of quartz, and is irradiated from the lower surface of the semiconductor wafer W. By receiving light irradiation from the halogen lamp HL, the semiconductor wafer W is preheated and its temperature increases. Note that since the transfer arm 11 of the transfer mechanism 10 is retracted inside the recess 62, it does not interfere with the heating by the halogen lamp HL.

When performing preheating with the halogen lamp HL, the temperature of the semiconductor wafer W is measured by the lower radiation thermometer 20. That is, the lower radiation thermometer 20 receives infrared light emitted from the lower surface of the semiconductor wafer W held by the susceptor 74 through the opening 78 to measure the temperature of the wafer being heated. The measured temperature of the semiconductor wafer W is transmitted to the control section 3. The control unit 3 controls the output of the halogen lamp HL while monitoring whether the temperature of the semiconductor wafer W, which is heated by light irradiation from the halogen lamp HL, has reached a predetermined preheating temperature T1. That is, the control unit 3 feedback-controls the output of the halogen lamp HL based on the measurement value by the lower radiation thermometer 20 so that the temperature of the semiconductor wafer W becomes the preheating temperature T1.

After the temperature of the semiconductor wafer W reaches the preheating temperature T1, the control section 3 maintains the semiconductor wafer W at the preheating temperature T1 for a while. Specifically, when the temperature of the semiconductor wafer W measured by the lower radiation thermometer 20 reaches the preheating temperature T1, the control unit 3 adjusts the output of the halogen lamp HL to bring the temperature of the semiconductor wafer W to about the same level. The preheating temperature is maintained at T1.

By performing preheating using the halogen lamp HL, the entire semiconductor wafer W is uniformly heated to the preheating temperature T1. At the stage of preheating by the halogen lamps HL, the temperature at the periphery of the semiconductor wafer W, where heat radiation is more likely to occur, tends to be lower than that at the center, but the density of the halogen lamps HL in the halogen lamp house 4 is The area facing the peripheral edge of the semiconductor wafer W is higher than the area facing the center. Therefore, the amount of light irradiated onto the peripheral edge of the semiconductor wafer W, where heat radiation is likely to occur, increases, and the in-plane temperature distribution of the semiconductor wafer W during the preheating stage can be made uniform.

When the temperature of the semiconductor wafer W reaches the preheating temperature T1 and a predetermined time has elapsed, the flash lamp FL irradiates the surface of the semiconductor wafer W with flash light. At this time, a part of the flash light emitted from the flash lamp FL goes directly into the processing chamber 6, and the other part is once reflected by the reflector 52 and then heads into the processing chamber 6. Flash heating of the semiconductor wafer W is performed by irradiating the light.

Since flash heating is performed by irradiating flash light from the flash lamp FL, the surface temperature of the semiconductor wafer W can be raised in a short time. In other words, the flash light emitted from the flash lamp FL is generated by converting electrostatic energy stored in a capacitor in advance into an extremely short light pulse, and the irradiation time is extremely short, ranging from 0.1 milliseconds to 100 milliseconds. It's a strong flash. Then, the surface temperature of the semiconductor wafer W, which is flash-heated by the flash light irradiation from the flash lamp FL, instantaneously rises to the processing temperature T2, and then rapidly falls.

After the flash heat treatment is completed, the halogen lamp HL is turned off after a predetermined period of time has elapsed. As a result, the temperature of the semiconductor wafer W is rapidly lowered from the preheating temperature T1. The temperature of the semiconductor wafer W during cooling is measured by the lower radiation thermometer 20, and the measurement result is transmitted to the control section 3. The control unit 3 monitors whether the temperature of the semiconductor wafer W has decreased to a predetermined temperature based on the measurement result of the lower radiation thermometer 20. After the temperature of the semiconductor wafer W falls below a predetermined temperature, the pair of transfer arms 11 of the transfer mechanism 10 move horizontally again from the retracted position to the transfer operation position and rise, so that the lift pins 12 move toward the susceptor. It protrudes from the upper surface of the susceptor 74 and receives the heat-treated semiconductor wafer W from the susceptor 74 . Subsequently, the transfer opening 66 that had been closed by the gate valve 185 is opened, and the processed semiconductor wafer W placed on the lift pin 12 is carried out by the transfer hand 151b (or transfer hand 151a) of the transfer robot 150. Ru. Specifically, the transfer robot 150 advances the transfer hand 151b to a position directly below the semiconductor wafer W pushed up by the lift pins 12 and stops it. Then, by lowering the pair of transfer arms 11, the flash-heated semiconductor wafer W is transferred to and placed on the transfer hand 151b. Thereafter, the transfer robot 150 moves the transfer hand 151b out of the processing chamber 6 and transfers the heat-treated semiconductor wafer W to the transfer chamber 170.

Next, the gate valve 132 is opened, and the transfer robot 150 carries the heat-treated semiconductor wafer W into the cool chamber 131 of the cooling section 130. The cooling unit 130 cools the semiconductor wafer W, which is at a relatively high temperature immediately after the heat treatment, to around room temperature. Note that the cooling process of the semiconductor wafer W may be performed in the cool chamber 141 of the cooling section 140.

After the cooling process is completed, the transfer robot 150 carries out the cooled semiconductor wafer W from the cool chamber 131 to the transfer chamber 170. Then, the gate valve 302 opens the opening 350 again, and the transfer robot 150 carries the semiconductor wafer W into the film thickness measurement chamber 301. Also at this time, when the gate valve 302 opens the opening 350, a curtain of nitrogen gas is formed covering the opening 350, so that an atmosphere containing oxygen gas flows from the film thickness measurement chamber 301 to the transfer chamber 170. This can prevent it from flowing in.

The film thickness measurement unit 300 measures the thickness of the thin film formed on the surface of the semiconductor wafer W carried into the film thickness measurement chamber 301. In this step, the film thickness measurement section 300 measures the film thickness of the semiconductor wafer W after being heat-treated in the heat treatment section 160. When a film formation process is performed by flash heat treatment in the heat treatment section 160, the thickness of the formed thin film is calculated by subtracting the film thickness measured before the process from the film thickness measured after the process. can do.

After the film thickness measurement after processing is completed, the transport robot 150 carries out the semiconductor wafer W from the film thickness measurement chamber 301 to the transport chamber 170. Then, the gate valve 293 is opened, and the transfer robot 150 carries the semiconductor wafer W into the warp measurement chamber 291 of the warp measurement section 290. After the semiconductor wafer W is carried into the warp measurement chamber 291, the gate valve 293 is closed and the warp measurement section 290 measures the warp occurring in the semiconductor wafer W after the heat treatment.

After the measurement of wafer warpage is completed, the gate valve 292 is opened. Then, the delivery robot 120 takes out the semiconductor wafer W from the warpage measurement chamber 291. The delivery robot 120 stores the semiconductor wafer W taken out from the warp measurement chamber 291 into the original carrier C. As described above, the heat treatment of one semiconductor wafer W is completed.

In the first embodiment, a film thickness measurement chamber 301 and an inspection chamber 401 having a relatively high oxygen concentration are connected to a transfer chamber 170 that requires an atmosphere with a low oxygen concentration. Note that the oxygen concentration in the cool chambers 131 and 141 connected to the transfer chamber 170 is approximately the same as the oxygen concentration in the transfer chamber 170. Furthermore, the oxygen concentration in the processing chamber 6 of the heat treatment section 160 is lower than the oxygen concentration in the transfer chamber 170.

When the gate valve 302 opens the opening 350, an atmosphere containing oxygen gas may flow into the transfer chamber 170 from inside the film thickness measurement chamber 301, so a curtain of nitrogen gas is formed to cover the opening 350. Thereby, it is possible to prevent an atmosphere containing oxygen gas from flowing into the transfer chamber 170 from inside the film thickness measurement chamber 301, and it is possible to suppress an increase in the oxygen concentration in the transfer chamber 170.

In particular, in the first embodiment, the flow of the nitrogen gas curtain is parallel to the semiconductor wafer W transported between the transport chamber 170 and the film thickness measurement chamber 301, so that the nitrogen gas curtain is transported. It is not obstructed by the semiconductor wafer W. Therefore, the opening 350 is reliably covered by the nitrogen gas curtain even when the semiconductor wafer W is being transported, thereby more reliably preventing the atmosphere containing oxygen gas from flowing into the transport chamber 170 from the film thickness measurement chamber 301. be able to. Similarly, since a nitrogen gas curtain is formed to cover the opening that communicates the transfer chamber 170 and the inspection chamber 401, it is possible to prevent an atmosphere containing oxygen gas from flowing into the transfer chamber 170 from inside the inspection chamber 401. I can do it.

<Second embodiment>
Next, a second embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus of the second embodiment is generally the same as that of the first embodiment (FIG. 1). Further, the processing procedure for the semiconductor wafer W in the second embodiment is also the same as that in the first embodiment. In the first embodiment, a nitrogen gas curtain was formed on the transfer chamber 170 side, whereas in the second embodiment, a nitrogen gas curtain was formed on both the transfer chamber 170 and the film thickness measurement chamber 301. Form.

FIG. 11 is a diagram showing a curtain forming mechanism in the second embodiment. In FIG. 11, the same elements as in the first embodiment (FIG. 9) are given the same reference numerals. A gate valve 302 is provided at a connecting portion between the transfer chamber 170 and the film thickness measurement chamber 301. The gate valve 302 opens and closes an opening 350 that communicates the transfer chamber 170 and the film thickness measurement chamber 301.

In the second embodiment, a first gas supply port 701 is provided near one longitudinal end of the opening 350 on the transfer chamber 170 side of both sides of the opening 350, and a first gas supply port 701 is provided near the other end. 1 exhaust port 702 is provided. Further, on the film thickness measurement chamber 301 side of both sides of the opening 350, a second exhaust port 712 is provided near one end in the longitudinal direction of the opening 350, and a second gas is supplied near the other end. A port 711 is provided. That is, both the transfer chamber 170 and the film thickness measurement chamber 301 are provided with a gas supply port and an exhaust port.

In the transfer chamber 170, nitrogen gas is ejected from the first gas supply port 701 in the horizontal direction so as to cover the opening 350, and the nitrogen gas ejected from the first gas supply port 701 is ejected from the first exhaust port. 702. When the first exhaust port 702 sucks the nitrogen gas ejected from the first gas supply port 701, a first curtain of nitrogen gas covering the opening 350 is formed. The first curtain of nitrogen gas flows horizontally from the top to the bottom of the paper in FIG.

On the other hand, in the film thickness measurement chamber 301, nitrogen gas is ejected from the second gas supply port 711 in the horizontal direction so as to cover the opening 350, and the nitrogen gas ejected from the second gas supply port 711 is The air is sucked through the second exhaust port 712. A second curtain of nitrogen gas covering the opening 350 is formed by the second exhaust port 712 sucking the nitrogen gas ejected from the second gas supply port 711 . The second curtain of nitrogen gas flows horizontally from the bottom to the top of the paper in FIG. That is, the flow direction of the first curtain formed in the transfer chamber 170 and the flow direction of the second curtain formed in the film thickness measurement chamber 301 are opposite.

Also in the second embodiment, the first and second curtains are formed only when the gate valve 302 opens the opening 350. Further, the semiconductor wafer W being transported between the transport chamber 170 and the film thickness measurement chamber 301 by the transport robot 150 via the opening 350 is parallel to the flows of the first and second curtains of nitrogen gas. be. Therefore, the first and second curtains of nitrogen gas are not blocked by the semiconductor wafer W being transported.

Further, in the second embodiment, nitrogen gas curtains are formed on both sides of the opening 350. That is, a first curtain is formed on one side of the opening 350, and a second curtain is formed on the other side. As a result, the opening 350 is reliably covered from both sides by the first and second curtains of nitrogen gas, which more reliably prevents the atmosphere containing oxygen gas from flowing from the film thickness measurement chamber 301 into the transfer chamber 170. can do.

In particular, in the second embodiment, the flow direction of the first curtain formed in the transfer chamber 170 and the flow direction of the second curtain formed in the film thickness measurement chamber 301 are opposite. Since the first curtain of nitrogen gas is formed parallel to the longitudinal direction of the opening 350, the atmosphere blocking effect is weaker in the vicinity of the first exhaust port 702 than in the vicinity of the first gas supply port 701. Similarly, since the second curtain of nitrogen gas is also formed parallel to the longitudinal direction of the opening 350, the effect of blocking the atmosphere near the second exhaust port 712 is greater than that near the second gas supply port 711. become weak. If the flow direction of the first curtain and the flow direction of the second curtain are set to be opposite to each other, the atmosphere shielding effect of the second curtain will be reduced where the atmosphere shielding effect of the first curtain is weakened. On the other hand, where the atmosphere blocking effect of the second curtain is weak, the atmosphere blocking effect of the first curtain is strong. That is, the first curtain and the second curtain complement each other in their atmosphere blocking effects, and it is possible to more reliably prevent the atmosphere containing oxygen gas from flowing from the film thickness measurement chamber 301 into the transfer chamber 170. .

<Modified example>
The embodiments of the present invention have been described above, but the present invention can be modified in various ways other than those described above without departing from the spirit thereof. For example, in the first embodiment, a curtain of nitrogen gas was formed on the transfer chamber 170 side of both sides of the opening 350, but instead of this, a nitrogen gas curtain was formed on the side of the film thickness measurement chamber 301. It is also possible to form a curtain. Even in this case, the opening 350 is covered with a curtain of nitrogen gas, and it is possible to prevent an atmosphere containing oxygen gas from flowing into the transfer chamber 170 from inside the film thickness measurement chamber 301. However, when a nitrogen gas curtain is formed on the side of the film thickness measurement chamber 301, an atmosphere with a relatively high oxygen concentration that remains between the curtain and the gate valve 302 (an atmosphere that remains in the opening 305) Since the nitrogen gas flows into the transfer chamber 170, it is preferable to form a curtain of nitrogen gas on the transfer chamber 170 side as in the first embodiment.

Further, in the above embodiment, the curtain of nitrogen gas flows along the horizontal direction, but it is not limited to this, and can flow in other directions as long as it is parallel to the semiconductor wafer W being transported by the transport robot 150. The curtain may be made to flow along the For example, when the transport robot 150 transports the semiconductor wafer W in an upright position (a position in which the normal line coincides with the horizontal direction), a curtain of nitrogen gas may be made to flow along the vertical direction.

In addition, in the above embodiment, a curtain of nitrogen gas was formed to cover the openings of the transfer chamber 170, the film thickness measurement chamber 301, and the inspection chamber 401, but the curtain of nitrogen gas was formed to cover the openings of the transfer chamber 170, the film thickness measurement chamber 301, and the inspection chamber 401. 141, the alignment chamber 231, and the warp measurement chamber 291), a curtain of nitrogen gas may be formed to cover the openings. In this way, it is possible to prevent an atmosphere containing oxygen gas from flowing into the transfer chamber 170 from each chamber. However, as mentioned above, it is difficult to make the film thickness measurement chamber 301 and the inspection chamber 401 airtight chambers, so it is difficult to maintain a low oxygen concentration atmosphere inside the chambers. Preferably, a curtain of nitrogen gas is formed covering the openings of the measurement chamber 301 and the inspection chamber 401.

Further, in the above embodiment, a curtain of nitrogen gas is formed, but the present invention is not limited to this, and a curtain of other inert gas such as argon or helium may be formed.

Further, in the above embodiment, the flash lamp house 5 is equipped with 30 flash lamps FL, but the number is not limited to this, and the number of flash lamps FL can be any number. . Further, the flash lamp FL is not limited to a xenon flash lamp, but may be a krypton flash lamp. Furthermore, the number of halogen lamps HL provided in the halogen lamp house 4 is not limited to 40, but may be any number.

Further, in the above embodiment, the semiconductor wafer W is preheated using a filament type halogen lamp HL as a continuously lit lamp that emits light continuously for 1 second or more, but the present invention is not limited to this. Instead of the halogen lamp HL, a discharge type arc lamp (for example, a xenon arc lamp) or an LED lamp may be used as a continuously lit lamp to perform preheating.

3 Control section 4 Halogen lamp house 5 Flash lamp house 6 Processing chamber 7 Holding section 10 Transfer mechanism 65 Heat treatment space 74 Susceptor 100 Heat treatment device 110 Indexer section 111 Load port 120 Delivery robot 131,141 Cool chamber 150 Transfer robot 160 Heat treatment section 170 Transfer chamber 231 Alignment chamber 291 Warp measurement chamber 301 Film thickness measurement chamber 302, 402 Gate valve 350 Opening 401 Inspection chamber 501 Gas supply port 502 Exhaust port 632 Air supply valve 639 Exhaust valve 701 First gas supply port 702 First exhaust port 711 Second gas supply port 712 Second exhaust port C Carrier FL Flash lamp HL Halogen lamp W Semiconductor wafer

Claims (16)

A heat treatment apparatus that performs heat treatment on a substrate,
a first chamber provided with a transport robot that transports the substrate;
a second chamber connected to the first chamber;
a gate valve that is provided at a connecting portion between the first chamber and the second chamber and opens and closes an opening that communicates the first chamber and the second chamber;
a gas supply unit that blows out an inert gas so as to cover the opening;
an exhaust section that sucks and exhausts the inert gas ejected from the gas supply section;
Equipped with
A curtain of inert gas covering the opening is formed by the exhaust section sucking inert gas ejected from the gas supply section,
The flow of the curtain from the gas supply part to the exhaust part is parallel to the substrate being transported between the first chamber and the second chamber by the transport robot via the opening,
The heat treatment apparatus is characterized in that the gas supply unit spouts inert gas only when the gate valve opens the opening. The heat treatment apparatus according to claim 1,
The gas supply unit includes a first gas supply port provided in the first chamber and a second gas supply port provided in the second chamber,
The exhaust section includes a first exhaust port provided in the first chamber and a second exhaust port provided in the second chamber,
A first curtain of inert gas is formed on the first chamber side by the first exhaust port sucking inert gas ejected from the first gas supply port,
A heat treatment apparatus characterized in that a second curtain of inert gas is formed on the second chamber side by the second exhaust port sucking inert gas ejected from the second gas supply port. . The heat treatment apparatus according to claim 2,
A heat treatment apparatus characterized in that the flow direction of the first curtain and the flow direction of the second curtain are opposite to each other. The heat treatment apparatus according to any one of claims 1 to 3,
A heat treatment apparatus characterized in that the length of the opening parallel to the flow of the curtain is longer than the width of the opening perpendicular to the flow of the curtain. The heat treatment apparatus according to any one of claims 1 to 4,
The heat treatment apparatus is characterized in that the second chamber has a film thickness measurement unit that measures the thickness of a thin film formed on the substrate, or a backside inspection unit that inspects flaws on the backside of the substrate. The heat treatment apparatus according to any one of claims 1 to 5,
The heat treatment apparatus is characterized in that the first chamber is further connected to a processing chamber that heats the substrate by irradiating the substrate with light. The heat treatment apparatus according to any one of claims 1 to 6,
A heat treatment apparatus characterized in that the curtain flows in a horizontal direction. The heat treatment apparatus according to any one of claims 1 to 7,
A heat treatment apparatus characterized in that the inert gas ejected from the gas supply section is nitrogen gas. A heat treatment method for heat-treating a substrate, the method comprising:
A gate valve provided at a connecting portion between a first chamber provided with a transport robot for transporting a substrate and a second chamber connected to the first chamber is an opening that communicates the first chamber and the second chamber. an opening step of opening the part;
a curtain forming step of forming an inert gas curtain covering the opening only when the gate valve opens the opening;
Equipped with
The flow of the curtain formed in the curtain forming step is parallel to the substrate being transported between the first chamber and the second chamber by the transport robot via the opening. Heat treatment method. The heat treatment method according to claim 9,
In the curtain forming step, a first curtain of inert gas is formed on the first chamber side, and a second curtain of inert gas is formed on the second chamber side. The heat treatment method according to claim 10,
A heat treatment method characterized in that the flow direction of the first curtain and the flow direction of the second curtain are opposite to each other. The heat treatment method according to any one of claims 9 to 11,
A heat treatment method characterized in that the length of the opening parallel to the flow of the curtain is longer than the width of the opening perpendicular to the flow of the curtain. The heat treatment method according to any one of claims 9 to 12,
The heat treatment method is characterized in that, in the second chamber, a thickness measurement of a thin film formed on the substrate or an inspection for scratches on the back surface of the substrate is performed. The heat treatment method according to any one of claims 9 to 13,
The heat treatment method is characterized in that the first chamber is further connected to a processing chamber that heats the substrate by irradiating the substrate with light. The heat treatment method according to any one of claims 9 to 14,
A heat treatment method characterized in that the curtain flows in a horizontal direction. The heat treatment method according to any one of claims 9 to 15,
A heat treatment method characterized in that the inert gas forming the curtain is nitrogen gas.

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