JP2023121619A - semiconductor light emitting device - Google Patents

Abstract

To provide a semiconductor light emitting device that is capable of shading light emitted from the sides of the semiconductor light emitting element and light guide, and protecting the semiconductor light emitting element and light guide from the outside world, while being highly reliable and easy to manufacture.SOLUTION: It has a light emitting device assembly 10A having a support substrate having a first and second electrode on the bottom, a semiconductor light emitting element 11 having a light emitting semiconductor layer provided on the support substrate and connected to the first and second electrodes, and a light guide 13 bonded on the emitting surface of the semiconductor light emitting element by an adhesive layer 12, and a cylindrical heat shrinkable covering member 14 made of heat shrinkable resin covering the sides of the light emitting device assembly.SELECTED DRAWING: Figure 1C

Description

The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device having a semiconductor light emitting element such as a light emitting diode (LED).

2. Description of the Related Art In recent years, semiconductor light emitting elements such as light emitting diodes (LEDs) are arranged and used in a plurality of devices in order to increase output power and control light distribution.

For example, among automobile headlights, a variable light distribution headlamp (ADB: Adaptive Driving Beam) that controls light distribution in accordance with the driving environment is known. Also known are high-output lighting LED packages and LED packages for information communication equipment in which LEDs are arranged at high density.

Generally, however, in a semiconductor light-emitting device in which a plurality of semiconductor light-emitting elements are arranged side by side, part of the light emitted from the conducting element may propagate to the non-conducting element. Such leakage light and light crosstalk have been problems in various application fields in which a plurality of semiconductor light emitting devices are arranged and used.

For example, Japanese Laid-Open Patent Publication No. 2004-100001 discloses that a light reflecting layer made of a dielectric multilayer film is provided on the side surfaces of a substrate and a light emitting element. Further, Patent Document 2 discloses a light-emitting element that is made of a dielectric multilayer film, has a reflective member that covers the side surface of the semiconductor laminate, and suppresses light leakage from the upper end of the side surface of the semiconductor laminate to the side. there is

Patent Document 3 discloses that a reflective layer made of an optical multilayer film is provided on the side surface of a sealing resin in which a fluorescent substance is dispersed and which seals a light-emitting diode.

Further, Patent Document 4 discloses a semiconductor electronic component in which a semiconductor chip is surrounded by a heat-shrinkable tube and an insulating coating is applied to prevent short-circuiting of the semiconductor chip due to contact of bonding wires in the manufacturing process.

JP 2015-225862 A JP 2015-119063 A JP-A-2006-351808 JP 2001-168132 A

The present invention has been made in view of the above points, and is capable of blocking light emitted from the side surface of a semiconductor light emitting element and a light guide, and protecting the semiconductor light emitting element and the light guide from the outside world. It is possible to provide a highly reliable semiconductor light-emitting device that is also excellent in hermeticity. In addition, it is possible to provide a semiconductor light-emitting device that is easy to manufacture, inexpensive, and has a simple structure.

A semiconductor light emitting device according to one embodiment of the present invention comprises:
a semiconductor light emitting device having a supporting substrate having a first electrode and a second electrode on a bottom surface thereof, and a light emitting semiconductor layer provided on the supporting substrate and connected to the first electrode and the second electrode;
a light guide adhered onto the emission surface of the semiconductor light emitting device by an adhesive layer;
a cylindrical heat-shrinkable covering member made of a heat-shrinkable resin that covers the side surface of the light emitting element assembly;
have.

1 is a plan view schematically showing the upper surface of a semiconductor light emitting device 10 according to a first embodiment of the invention; FIG. 1 is a diagram schematically showing a side surface of a semiconductor light emitting device 10; FIG. 1B is a cross-sectional view schematically showing a cross section of the semiconductor light emitting device 10 taken along line AA of FIG. 1A; FIG. 3 is a partially enlarged cross-sectional view showing an enlarged cross-section of a part W of the side portion of the semiconductor light-emitting device 10. FIG. 2 is a plan view showing the upper surface of the semiconductor light emitting device 11; FIG. 3 is a plan view schematically showing the back surface of the semiconductor light emitting device 11. FIG. 2B is a cross-sectional view showing a cross-section along line AA shown in FIG. 2A; FIG. 10A and 10B are a top view and a sectional view showing a tubular covering member 14 made of a light-emitting element assembly 10A and a heat-shrinkable resin 14A set in the covering molding machine 100. FIG. 10A and 10B are a top view and a cross-sectional view showing the light emitting element assembly 10A against which a pair of pressing dies 101 are pressed while the coating molding machine 100 is heated. FIG. 3A is a top view and a cross-sectional view showing the manufactured semiconductor light emitting device after opening the pressing mold 101; FIG. 4 is a cross-sectional view showing a semiconductor light emitting device 50 of a modified example of the first embodiment; 4B is a partially enlarged cross-sectional view showing an enlarged cross-section of a portion W of the side portion of the semiconductor light emitting device 50 shown in FIG. 4A. FIG. FIG. 4 is a plan view schematically showing the upper surface of a semiconductor light emitting device 70 according to a second embodiment of the invention; FIG. 3 is a diagram schematically showing a side surface of a semiconductor light emitting device 70; FIG. 5B is a cross-sectional view schematically showing a cross section of the semiconductor light emitting device 70 taken along line AA of FIG. 5A; 3 is a partially enlarged cross-sectional view showing an enlarged cross-section of a portion W of the side portion of the semiconductor light-emitting device 70. FIG. FIG. 11 is a partially enlarged cross-sectional view showing an enlarged cross-section of a portion W of the side wall portion of a semiconductor light-emitting device 75 according to a modified example of the second embodiment; FIG. 10 is a diagram showing a first individual molding method suitable for manufacturing the semiconductor light emitting device 70 of the second embodiment; FIG. 10 is a diagram showing an individual molding method suitable for manufacturing the semiconductor light emitting device 70 of the second embodiment; FIG. 10 is a diagram showing a continuous molding method suitable for manufacturing the semiconductor light emitting device 70 of the second embodiment; FIG. 8B is a top view as seen from a plane along line EE of FIG. 8A; FIG. 8B is a top view as viewed from a plane along line FF of FIG. 8A;

Although preferred embodiments of the present invention will be described below, they may be modified and combined as appropriate. Also, in the following description and accompanying drawings, substantially the same or equivalent parts are denoted by the same reference numerals.

[First embodiment]
(1) Configuration of Semiconductor Light Emitting Device FIG. 1A is a plan view schematically showing the top surface of a semiconductor light emitting device 10 according to a first embodiment of the present invention. FIG. 1B is a diagram schematically showing a side surface of the semiconductor light emitting device 10. FIG. FIG. 1C is a cross-sectional view schematically showing a cross section of the semiconductor light emitting device 10 taken along line AA of FIG. 1A. FIG. 1D is a partially enlarged cross-sectional view showing an enlarged cross-section of a portion W of the side portion of the semiconductor light emitting device 10 shown in FIG. 1C.

In this embodiment, the semiconductor light emitting device 10 includes a semiconductor light emitting element 11 which is a light emitting diode (LED), an adhesive layer 12 which is a translucent layer made of a thermosetting resin, a phosphor plate 13 which is a light guide, and a coating. It has a member 14 .

More specifically, the semiconductor light emitting element 11 and the phosphor plate 13 are bonded together by an adhesive layer 12, which is a translucent layer, to form a light emitting element assembly 10A. The light emitting element assembly 10A has a rectangular columnar shape as a whole.

Further, as shown in FIG. 1C, the semiconductor light emitting device 10 has pad electrodes 34A and 34B on the back surface of the semiconductor light emitting element 11, which can be directly mounted on a circuit board.

The shape of the light emitting element assembly 10A is not limited to the rectangular columnar shape, and may have a columnar (including an elongated columnar) shape or a polygonal columnar shape. Also, the semiconductor light emitting element 11 or the phosphor plate 13 (light guide) may have a polygonal prism shape with chamfered corners.

Moreover, it is preferable that the covering member 14 covers the entire side surface of the light emitting element assembly 10A. The adhesive layer 12 is preferably filled between the semiconductor light emitting element 11 and the phosphor plate 13 (light guide). The adhesive layer 12 is preferably a thermosetting resin, but a curable resin such as an ultraviolet curable resin can also be used.

(2) Covering member As shown in FIGS. 1C and 1D, in the present embodiment, the covering member 14 (hereinafter also referred to as the first covering member) is a tube-shaped member having an inner surface coated with an adhesive resin 14G. It is made of a heat-shrinkable resin 14A, and is closely adhered to the side surface of the light-emitting element assembly 10A by heat shrinkage of the heat-shrinkable resin 14A.

Further, the covering member 14 has a wrapping portion 14R that wraps around and adheres to the back surface of the semiconductor light emitting element 11 . Wrapping portion 14</b>R of covering member 14 covers the peripheral portion of the back surface of semiconductor light emitting element 11 .

The heat-shrinkable resin 14A may be a resin having light reflectivity, such as a white resin (dye, pigment), or a fluorine resin in which reflective particles such as TiO2 particles are dispersed in a resin, a silicone resin, an epoxy resin, an acrylic resin, or the like. A shrinkable resin can be used. In particular, fluororesin is suitable because it is excellent in airtightness such as air resistance and water resistance.

Examples of fluororesins include PTFE (:polytetrafluoroethylene), PFA (perfluoroalkoxyalkane), FEP (perfluoroethylenepropene copolymer), ETFE (ethylenetetrafluoroethylene copolymer), and the like.

A heat-shrinkable tube is produced, for example, by molding a resin into a tubular shape, cross-linking a polymer with an electron beam, expanding and cooling, and fixing the shape. Then, it shrinks due to the force of returning to its original shape by heating. That is, the heat-shrinkable resin is obtained by stretching a resin that is primarily formed into a tubular shape, and has high strength against tearing in the surface direction.

Further, referring to FIG. 1D, the outer surface 13E of the phosphor plate 13 and/or the inner surface 14I of the covering member 14 are roughened to improve the adhesion.

In the above description, the case where the heat-shrinkable resin 14A has light reflectivity has been described, but it may be formed of a heat-shrinkable resin having a light-shielding property by dispersing light-absorbing particles.

(3) Light Guide and Adhesive Layer The phosphor plate 13, which is a light guide, also functions as a sealing material on the upper surface side of the semiconductor light emitting device 10. FIG. Light emitted from semiconductor light emitting element 11 enters phosphor plate 13 from the bottom surface of phosphor plate 13, and emitted light LO of semiconductor light emitting device 10 is emitted from the surface of phosphor plate 13 (light emission surface 13S).

For example, the semiconductor light emitting element 11 emits blue light, and the phosphor plate 13 converts the blue light from the semiconductor light emitting element 11 into yellow light. White light, which is a mixture of blue light and yellow light, is emitted from the semiconductor light emitting device 10 as emitted light LO. Further, if a phosphor plate 13 that converts substantially all of the blue light from the semiconductor light emitting element 11 into yellow light is used as the phosphor plate 13, the emitted light LO from the semiconductor light emitting device 10 can also be yellow light. Similarly, it can be red light or infrared light.

The light guide member 13 includes a ceramic phosphor plate made of alumina, YAG:Ce, etc., a glass phosphor plate made of glass and α or β sialon, etc., a resin phosphor plate made of silicone resin and silicate: Ce, YAG and Ce. A single-crystal or polycrystalline single-crystal phosphor plate made of Ce or the like can be used.

Instead of the phosphor plate 13, a light guide member such as a translucent glass plate, a sapphire plate, a resin plate, or a plate with a lens and a diffractive optical element may be used.

The adhesive layer 12 can be made of a resin that transmits light emitted by the semiconductor light emitting element 11, such as translucent silicone resin, epoxy resin, or acrylic resin. Alternatively, low-melting-point glass, nano metal oxide sintered bodies, and the like can be used. Moreover, a composite body obtained by impregnating a porous nano-metal oxide sintered body with a resin or a low-melting-point glass can also be used. Moreover, a diffusing agent and a light conversion member can be added to the adhesive layer 12 .

(4) Semiconductor Light Emitting Device Hereinafter, the semiconductor light emitting device 11 will be described in detail with reference to the drawings. FIG. 2A is a plan view showing the upper surface of the semiconductor light emitting device 11. FIG. In order to explain the internal electrode structure, the electrodes inside the device are also indicated by dashed lines.

FIG. 2B is a plan view schematically showing the back surface of the semiconductor light emitting element 11, that is, the surface on which the semiconductor light emitting element 11 is mounted on a circuit board such as a printed circuit board (PCB). 2C is a cross-sectional view showing a cross section along line AA shown in FIG. 2A.

FIG. 2C is a cross-sectional view schematically and in detail showing an example of the configuration of the semiconductor light emitting device 11. As shown in FIG. The semiconductor light emitting element 11 has a configuration in which an LED semiconductor layer 20, which is a so-called thin-film LED, is attached to a support substrate 31 as a light emitting semiconductor layer.

More specifically, the LED semiconductor layer (light-emitting semiconductor layer) 20 has a configuration in which a semiconductor layer (thin film LED) having an LED structure epitaxially grown on a growth substrate is removed from the growth substrate and attached to the support substrate 31. are doing. In this embodiment, the p-type semiconductor layer, which is the growth outermost layer, is attached to the support substrate 31 as the lower surface, and the n-type semiconductor layer is the surface layer.

The support substrate 31 is a conductive n-type substrate made of Si (silicon) doped with P (phosphorus) or As (arsenic).

The LED semiconductor layer 20 has an n-type semiconductor layer (second conductivity type semiconductor layer) 21 , a light emitting layer 22 and a p-type semiconductor layer (first conductivity type semiconductor layer) 23 . Each of the n-type semiconductor layer 21 and the p-type semiconductor layer 23 is composed of at least one semiconductor layer, and may have various semiconductor layers such as an electron or hole barrier layer, a current diffusion layer, a contact layer, etc. according to the purpose. good.

In this embodiment, the case where the first conductivity type is p-type and the second conductivity type is n-type will be described as an example. It may be p-type.

The LED semiconductor layer 20 is, for example, a blue-emitting LED semiconductor layer made of a GaN-based semiconductor layer, but is not limited thereto. The light emitting layer 22 has, for example, a single quantum well (SQW) or multiple quantum well (MQW) structure.

The LED semiconductor layer 20 has a p-electrode 25A and an n-electrode 25B. P-electrode 25A is bonded to substrate p-electrode 32A by conductive p-side bonding layer 26, and n-electrode 25B is bonded to substrate n-electrode 32B by conductive n-side bonding layer 27. FIG.

The p-electrode 25A is an ITO/Ni/Pt/ITO/Ni/Pt/ITO/Ni/Pt/Pt/ITO electrode, in which indium tin oxide (ITO), nickel (Ni), platinum (Pt) and silver (Ag) reflective films are formed on the p-type semiconductor layer 23 in this order. It consists of an Ag layer. The n-electrode 25B is formed from a (Ti or Ni)/Pt/Au layer in which titanium (Ti) or nickel (Ni), platinum (Pt) and gold (Au) are formed in this order on the n-type semiconductor layer 21. Become.

The material and structure of the p-electrode 25A and n-electrode 25B are not limited to the above. An appropriate structure can be selected in consideration of characteristics such as improvement in light extraction efficiency due to light reflection, ohmic characteristics, and device reliability (lifetime).

A side surface of the LED semiconductor layer 20 is provided with an element protection film 28A made of SiO2. A substrate protection film 28B made of SiO2 is provided on the surface of the support substrate 31 (on the bonding side with the LED semiconductor layer 20).

The substrate p-electrode 32A is connected to a conductive via 33, and is electrically connected via the conductive via 33 to an anode electrode 34A (first electrode) on the back surface of the semiconductor light emitting device 10. FIG. The substrate p-electrode 32A, the conductive via 33 and the anode electrode 34A are insulated from the supporting substrate 31 by a substrate insulating film 35 made of SiO2.

The substrate n-electrode 32B is electrically connected to the cathode electrode 34B (second electrode) on the back surface of the semiconductor light-emitting device 10 via the support substrate 31, which is a conductive Si substrate.

When a current is applied to the anode electrode 34A and the cathode electrode 34B from a circuit board or the like (not shown) on which the semiconductor light emitting element 11 is mounted, the semiconductor light emitting element 11 emits light, which is emitted from the surface 21S of the n-type semiconductor layer 21. (direct light). Light emitted from the light-emitting layer 22 in the direction opposite to the direct light is reflected by the p-electrode 25A and emitted from the surface 21S of the n-type semiconductor layer 21 (reflected light). That is, the direct light and the reflected light are emitted from the surface 21S of the n-type semiconductor layer 21 as the emitted light LE of the semiconductor light emitting device 11. FIG.

Although the case where the LED semiconductor layer 20 is a thin film LED has been described as an example, it is not limited to this. The LED semiconductor layer 20 may be, for example, a so-called flip-chip type LED semiconductor layer in which a translucent substrate is used as a growth substrate and a growth outermost layer (for example, a p-type semiconductor layer) is used as an emission surface.

(5) Manufacturing Method of Semiconductor Light Emitting Device 10 According to First Embodiment Next, manufacturing steps of the semiconductor light emitting device 10 will be described with reference to FIGS. 3A to 3C. In each figure, the upper side shows a top view, and the lower side shows a cross-sectional view of a cross section along the center line of the light emitting element assembly 10A.

First, as shown in FIG. 3A, a tubular coating member 14 (see FIG. 1D) composed of a light emitting element assembly 10A and a heat-shrinkable resin 14A having an inner surface coated with an adhesive 14G is installed in a coating molding machine 100. to set. At this time, as shown in the cross-sectional view, the heat-shrinkable resin 14A is arranged in such a size and position that it can be brought into contact with the entire side surface and the peripheral portion of the bottom of the light emitting device assembly 10A during pressing.

A protective sheet 104 is attached to the electrode pads 34A and 34B of the light emitting element assembly 10A, and fitted into the recesses of the pedestal 103 for positioning.

Next, as shown in FIG. 3B, while the coating molding machine 100 is heated, a pair of L-shaped pressing dies 101 are pressed from both sides of the light emitting element assembly 10A (arrows in the figure). As a result, the covering member 14 is in close contact with the side surface of the light emitting element assembly 10A without forming a gap. The adhesive 14G applied to the heat-shrinkable resin 14A is cured by heating, and the heat-shrinkable resin 14A is adhered to the side and bottom peripheral portions of the light emitting element assembly 10A.

Subsequently, as shown in FIG. 3C, while cooling the coating molding machine 100, the pressing mold 101 is opened (arrow in the figure). Through the above steps, the semiconductor light emitting device 10 is manufactured in which the covering members 14 are in close contact with the peripheral edge portions of the side and bottom portions of the light emitting element assembly 10A.

(6) Modification of First Embodiment FIG. 4A is a cross-sectional view showing a semiconductor light emitting device 50 of a modification of the first embodiment, and FIG. 4B is a side view of the semiconductor light emitting device 50 shown in FIG. 4A. is a partially enlarged cross-sectional view showing an enlarged cross-section of a part W of the .

In this modified example, a covering member 16 having an inner covering member 16A and an outer covering member 16B is provided on the side surface of the light emitting element assembly 10A. That is, as shown in FIG. 4A, an outer covering member 16B made of heat-shrinkable resin is provided in close contact with the outer peripheral side surface of the inner covering member 16A. That is, the semiconductor light emitting device 50 has the covering member 16 made of two layers of heat-shrinkable resin.

More specifically, the inner coating member 16A and the outer coating member 16B are laminated, and the inner surface of the inner coating member 16A is coated with the adhesive resin 14G to form a tube-shaped heat-shrinkable resin 16 which is heat-shrunk to form the side surface of the light emitting element assembly 10A. is tightly adhered to the

The inner coating member 16A is a light-reflecting heat-shrinkable resin such as white resin, and the outer coating member 16B is a light-absorbing heat-shrinkable resin such as black resin.

In this way, by using the heat-shrinkable resin in which the light-reflecting inner coating member and the light-absorbing outer coating member are laminated as the coating member 16, the light from the light emitting element assembly 10A and the light from the outside of the coating member are used. It has both high light shielding properties against

As described above, according to the semiconductor light emitting devices 10 and 50 of the first embodiment, light emitted from the side surfaces of the semiconductor light emitting element and the light guide is blocked, and the semiconductor light emitting element and the light guide are separated from each other. It is possible to provide a highly reliable semiconductor light emitting device that can be protected from the outside world and has excellent airtightness. In addition, it is possible to provide a semiconductor light-emitting device that is easy to manufacture, inexpensive, and has a simple structure.

[Second embodiment]
(1) Configuration of Semiconductor Light Emitting Device FIG. 5A is a plan view schematically showing the top surface of a semiconductor light emitting device 70 according to a second embodiment of the present invention. FIG. 5B is a diagram schematically showing a side surface of the semiconductor light emitting device 70. FIG. FIG. 5C is a cross-sectional view schematically showing a cross section of the semiconductor light emitting device 70 taken along line AA of FIG. 5A. 5D is a partially enlarged cross-sectional view showing an enlarged cross-section of a portion W of the side portion of the semiconductor light emitting device 70. FIG.

As shown in FIGS. 5A to 5C, in this embodiment, a semiconductor light emitting device 70 includes a covering member 16 having a third covering member 71 (inner covering member) and a first covering member 72 (outer covering member). is provided on the side surface of the light emitting element assembly 10A.

The third covering member 71 is a cured resin, that is, a molded body, for example, a white resin having light reflectivity. Also, the first covering member 72 is formed using a tubular covering member made of heat-shrinkable resin as described in the first embodiment.

In this embodiment, the first covering member 72 is made of a light-reflecting resin, but it can be selected from various resins such as a light-absorbing resin and a colored resin.

As shown in FIG. 5D, a third adhesive layer 71G is provided on the inner surface of the third covering member 71 to adhere the third covering member 71 and the phosphor plate 13 to each other. A first adhesive layer 72G is provided on the inner surface of the first covering member 72 to bond the first covering member 72 and the third covering member 71 together.

More specifically, the light emitting element assembly 10A has a rectangular columnar shape, and a third covering member 71 having a cylindrical outer surface and an arcuate (or semi-cylindrical) cross section is in close contact with each of the four side surfaces thereof. are provided. Here, the semi-cylindrical side surfaces (outer surfaces) of the four third covering members 71 form one closed cylindrical side surface as a whole. A first covering member 72 is provided in close contact with the cylindrical side surface of the four third covering members 71 .

In other words, the rectangular columnar light emitting element assembly 10A is inscribed in the cylindrical first covering member 72, and the third covering having an arc-shaped cross section is provided between the first covering member 72 and the light emitting element assembly 10A. A member 71 is inserted, and the third covering member 71 is provided in close contact with the first covering member 72 and the light emitting element assembly 10A.

Note that the first covering member 72 may have a substantially cylindrical shape. That is, even if the first covering member 72 has a concave portion or a convex portion at the connecting portion between the adjacent third covering members 71 or the portion where the light emitting element assembly 10A is inscribed in the first covering member 72, , as long as it has a cylindrical shape as a whole. Even in such a case, the first covering member 72, which is a heat-shrinkable tube, can cover the light-emitting element assembly 10A and the third covering member 71 evenly without gaps by heat shrinkage.

Also, the case where the third covering member 71 (inner covering member) has an arc-shaped cross section has been described, but the present invention is not limited to this. The third covering member 71, which is a resin molding, is inserted between the first covering member 72 (outer covering member) and the light emitting element assembly 10A. It is sufficient that it has a shape that fills between the first covering member 72 and the light emitting element assembly 10A. Therefore, in this case, the first covering member 72 can have any shape including a polygonal prism shape.

In this embodiment, by inserting a third covering member 71 having an arcuate cross section between the outer surface of the light emitting element assembly 10A and the heat-shrinkable tube (first covering member 72), the first embodiment The coating molding machine used in 1 becomes unnecessary, and the semiconductor light emitting device 70 can be manufactured more easily.

(2) Modification of Second Embodiment FIG. 6 is a partially enlarged cross-sectional view showing an enlarged cross section of a part W of the side portion of a semiconductor light emitting device 75 of a modification of the second embodiment.

In this modified example, a plurality of unevenness (or grooves) 77 are provided on the outer surface of the third covering member 71A, which is the inner covering member, so that the third covering member 71A and the first covering member 72 There is no adhesive between them.

The tube-shaped first covering member 72 made of heat-shrinkable resin is fitted into the recesses and projections 77 of the third covering member 71A during thermoforming, and firmly adheres to the third covering member 71A.

(3) First manufacturing method of semiconductor light emitting device (individual molding method)
7A and 7B are diagrams showing an example of an individual molding method, which is a first manufacturing method suitable for manufacturing the semiconductor light emitting device 70 of the second embodiment. 7A and 7B show the state before heat molding and after heat molding, respectively. FIG. 4 shows a top view as seen from the plane on DD.

Referring to FIG. 7A, in the coating molding machine 200, the guide tube 201 has a rectangular tube shape corresponding to the side surface of the rectangular light emitting element assembly 10A. The stacked third covering member 71 and first covering member 72 are fed along the guide tube 201 . The illustration of the first adhesive layer 71G and the second adhesive layer 72G (see FIG. 5D) is omitted.

After the third covering member 71 and the first covering member 72 are guided onto the pedestal 103, when the guide tube 201 is pulled upward (FIG. 7A, sectional view), the distance between the four side surfaces of the light emitting element assembly 10A is increased. A third covering member 71 and a first covering member 72 are arranged with a gap between them (FIG. 7A, top view).

Next, the cutter CT cuts the third covering member 71 and the first covering member 72 at the same height as the light emitting element assembly 10A (FIG. 7A, sectional view).

Subsequently, when the first covering member 72 is heated by the hot air nozzle 203, as shown in FIG. 7B, the first covering member 72 contracts, and the third covering member 71 expands to the 4th surface of the light emitting element assembly 10A. Adheres closely to the sides. Further, after the thermal contraction, the adhesive layer is thermally cured by further heating. The manufacturing of the semiconductor light emitting device 70 is completed through the above steps.

(4) First manufacturing method of semiconductor light emitting device (continuous molding method)
FIG. 8A is a diagram showing an example of a continuous molding method, which is a second manufacturing method suitable for manufacturing the semiconductor light emitting device 70 of the second embodiment. 8B and 8C are top views as seen from a plane along lines EE and FF of FIG. 8A.

Referring to FIG. 8A, in the coating molding machine 300, the light emitting element assembly 10A is positioned downward (indicated by an arrow in the figure) along a first guide tube 301 having a rectangular tubular shape corresponding to the side surface of the light emitting element assembly 10A. sent to

That is, as shown in FIG. 8B, the third covering member 71, the first covering member 72, and the first guiding tube 301 are inserted between the third covering member 71 and the light emitting element assembly 10A. The light emitting element assembly 10A is transferred.

Subsequently, when the first covering member 72 is heated by the hot air nozzle 303 at the transfer position where the first guide tube 301 is removed, the first covering member 72 contracts and the third covering member 71 emits light. It is closely adhered to the four side surfaces of the element assembly 10A.

Subsequently, as shown in FIG. 8C, the light emitting element assembly 10A to which the first covering member 72 is in close contact is transported along the inner surface of the second guide tube 302 and heated by the heater 304 to heat the adhesive layer. It is cured (Fig. 8A).

Finally, the cutter CT cuts the third covering member 71 and the first covering member 72 at the same height as the light emitting element assembly 10A. The manufacturing of the semiconductor light emitting device 70 is completed through the above steps.

As described in detail above, according to the present invention, it is possible to shield the light emitted from the side surface of the semiconductor light emitting element and the light guide, and to protect the semiconductor light emitting element and the light guide from the outside while airtightly. It is possible to provide a highly reliable semiconductor light-emitting device that is excellent in terms of performance. In addition, it is possible to provide a semiconductor light-emitting device that is easy to manufacture, inexpensive, and has a simple structure.

In the above-described embodiments, the case where the semiconductor light emitting element and the light guide have a rectangular columnar shape has been described, but the present invention is not limited to this. For example, it can be applied to the case of having a polygonal columnar shape or a columnar (including an oval columnar) shape.

Also, the case where the semiconductor light emitting device has a columnar shape has been described, but the present invention is not limited to this. For example, it can be applied to the case of having a polygonal columnar shape or a columnar (including an oval columnar) shape.

10, 50, 70: semiconductor light emitting device, 10A: light emitting element assembly, 11: semiconductor light emitting element, 12: adhesive layer, 13: light guide (phosphor plate), 14: covering member, 14A: heat shrinkable resin, 14R : wrapping portion, 16A: inner coating member, 16B: outer coating member, 20: light emitting semiconductor layer, 21: second conductivity type semiconductor layer), 22: light emitting layer, 23: first conductivity type semiconductor layer, 71, 71A: third coating member (inner coating member), 72: first coating member (outer coating member), 71G, 72G: adhesive layer, 200, 300: coating molding machine

Claims (10)

a semiconductor light emitting device having a supporting substrate having a first electrode and a second electrode on a bottom surface thereof, and a light emitting semiconductor layer provided on the supporting substrate and connected to the first electrode and the second electrode;
a light guide adhered onto the emission surface of the semiconductor light emitting device by an adhesive layer;
a cylindrical heat-shrinkable covering member made of a heat-shrinkable resin that covers the side surface of the light emitting element assembly;
A semiconductor light emitting device having 2. The semiconductor light-emitting device according to claim 1, wherein said light-emitting element assembly and said heat-shrinkable covering member are adhered with a thermosetting adhesive. 3. The semiconductor light emitting device according to claim 1, wherein said light emitting element assembly has a rectangular columnar shape. 4. The semiconductor light-emitting device according to claim 1, wherein said heat-shrinkable covering member has a substantially cylindrical shape or a substantially polygonal prism shape. 5. The semiconductor light-emitting device according to claim 1, further comprising an outer covering member made of heat-shrinkable resin and provided on the outer surface of said heat-shrinkable covering member. 6. The semiconductor light-emitting device according to claim 1, wherein said light guide is a phosphor. 7. The semiconductor light-emitting device according to claim 1, wherein the heat-shrinkable covering member has a wrapping portion that wraps around the back surface of the semiconductor light-emitting element to cover the periphery of the back surface of the semiconductor light-emitting element. . The heat-shrinkable covering member has a substantially cylindrical shape,
7. The semiconductor light-emitting device according to claim 1, further comprising a resin molding inserted and filled between said heat-shrinkable covering member and said light-emitting element assembly as an inner covering member. 9. The semiconductor light emitting device according to claim 8, wherein said light emitting element assembly has a rectangular columnar shape, and said resin molding has an arcuate cross section. 10. The semiconductor light emitting device according to claim 8, wherein said inner covering member has a plurality of irregularities on its outer surface.

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