JP2023099471A - 基板処理方法及び基板処理装置 - Google Patents
基板処理方法及び基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 239
- 238000003672 processing method Methods 0.000 title claims abstract description 36
- 239000010409 thin film Substances 0.000 claims abstract description 86
- 239000010408 film Substances 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000009257 reactivity Effects 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 297
- 238000000034 method Methods 0.000 claims description 186
- 239000012495 reaction gas Substances 0.000 claims description 69
- 150000002500 ions Chemical class 0.000 claims description 52
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 45
- 239000006227 byproduct Substances 0.000 claims description 29
- 230000000903 blocking effect Effects 0.000 claims description 17
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 15
- 239000007787 solid Substances 0.000 claims description 14
- 229910052731 fluorine Inorganic materials 0.000 claims description 13
- 239000011737 fluorine Substances 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 11
- 230000006641 stabilisation Effects 0.000 claims description 8
- 238000011105 stabilization Methods 0.000 claims description 8
- 239000000376 reactant Substances 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 abstract description 31
- 238000010586 diagram Methods 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 14
- 150000004767 nitrides Chemical class 0.000 description 9
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000000197 pyrolysis Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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Abstract
Description
100: 工程室
200: 支持ユニット
300: 第1の処理ガス供給ユニット
400: 第2の処理ガス供給ユニット
500: プラズマ室
600: プラズマ源ユニット
700: ポンプユニット
900: 制御ユニット
Claims (20)
- 室内基板を処理する方法であって、
第1の処理ガスのプラズマを構成するラジカルと第2の処理ガスが混合した反応ガスを基板上に供給する基板処理ステップを含む単位サイクルを少なくとも1回以上行い、
前記基板は、第1の薄膜と、前記反応ガスに対する反応性が前記第1の薄膜よりも相対的に低い第2の薄膜とを含む、基板処理方法。 - 前記単位サイクルは、更に、
前記基板処理ステップの前に、前記第2の処理ガスを前記基板上に供給するチャンバ安定化ステップと、
前記基板処理ステップの後に、前記基板処理ステップで生成された処理副産物を除去する副産物除去ステップと、を含む、請求項1に記載の基板処理方法。 - 前記基板処理ステップは、
前記反応ガスが前記第1の薄膜と反応して、固体副産物が生成されるステップと、
前記固体副産物が加熱された前記基板の温度雰囲気で昇華するステップと、を含む、請求項1に記載の基板処理方法。 - 前記第1の薄膜は、シリコン酸化膜を含み、前記第2の薄膜は、シリコン窒化膜を含み、
前記ラジカルは、フッ素ラジカルを含み、前記第2の処理ガスは、NH3を含み、
前記基板処理ステップは、
前記反応ガスが前記シリコン酸化膜と反応して、固体副産物である(NH4)2SiF6が生成されるステップと、
前記固体副産物である(NH4)2SiF6が加熱された前記基板の温度雰囲気で昇華するステップと、を含む、請求項1に記載の基板処理方法。 - 前記第1の処理ガスのプラズマを構成するラジカルは、前記第1の処理ガスのプラズマからイオンと電子を除去した後、前記基板上に提供される、請求項1に記載の基板処理方法。
- 前記第1の処理ガスは、NF3、H2、又はNH3を含み、
前記第2の処理ガスは、NH3又はH2を含む、請求項1に記載の基板処理方法。 - 前記第1の処理ガス又は前記第2の処理ガスは、更に、不活性ガスを含む、請求項6に記載の基板処理方法。
- 前記単位サイクルにおいて前記基板処理ステップは、前記反応ガスが、前記第1の薄膜と反応し、前記第2の薄膜と反応する前の工程区間の間だけ行う、請求項1に記載の基板処理方法。
- 第1の処理ガスのプラズマ発生空間を設けるプラズマ室と、
前記プラズマ室に供給された前記第1の処理ガスをプラズマ状態に励起するように、電源を与えるプラズマ源ユニットと、
前記プラズマ室の下方に設けられ、第2の処理ガスが供給される内部空間を有する工程室と、
前記内部空間で基板を支持する支持ユニットと、
前記プラズマ室と前記工程室の間に設けられ、前記第1の処理ガスのプラズマを構成するラジカルが選択的に下方に通るイオン遮断部と、
前記基板が前記内部空間において、前記第1の処理ガスのプラズマを構成するラジカルと前記第2の処理ガスが混合した反応ガスに露出する基板処理ステップを含む単位サイクルが、少なくとも1回以上行われるように、前記第1の処理ガス及び前記第2の処理ガスのガス供給を制御するか、前記プラズマ源ユニットの電源印加を制御する制御信号を出力する制御ユニットとを含む、基板処理装置。 - 前記基板は、第1の薄膜と、前記反応ガスに対する反応性が前記第1の薄膜よりも相対的に低い第2の薄膜とを含み、
前記制御ユニットは、前記単位サイクル内の前記基板処理ステップを、前記反応ガスが、前記第1の薄膜と反応し、前記第2の薄膜と反応する前の工程区間の間だけ行うように、前記第1の処理ガス及び前記第2の処理ガスのガス供給を制御するか、前記プラズマ源ユニットの電源印加を制御する制御信号を出力する、請求項9に記載の基板処理装置。 - 前記制御ユニットは、前記単位サイクルが、更に、前記基板処理ステップの前に前記基板が前記ラジカルに露出せず、前記第2の処理ガスに露出するステップと、前記基板処理ステップの後に、前記基板が前記ラジカル及び前記第2の処理ガスに露出しないステップとを含むように、前記第1の処理ガス及び前記第2の処理ガスのガス供給を制御するか、前記プラズマ源ユニットの電源印加を制御する制御信号を出力する、請求項9に記載の基板処理装置。
- 前記制御ユニットは、前記基板処理ステップにおいて、前記工程室内の圧力よりも前記基板処理ステップの後、前記基板が前記ラジカル及び前記第2の処理ガスに露出しないステップにおける前記工程室内の圧力が相対的に低いように、前記工程室に連結されたポンプユニットを制御する制御信号を出力する、請求項11に記載の基板処理装置。
- 前記第1の処理ガスは、NF3、H2、又はNH3を含み、
前記第2の処理ガスは、NH3、又はH2を含む、請求項9に記載の基板処理装置。 - 前記第1の薄膜は、シリコン酸化膜を含み、前記第2の薄膜は、シリコン窒化膜を含む、請求項10に記載の基板処理装置。
- 更に、前記内部空間を、前記ラジカルと前記第2の処理ガスが混合した反応ガスを生成する反応ガス発生空間と、前記基板を処理する処理空間とに区画し、前記反応ガス発生空間から前記処理空間に前記反応ガスが流動する複数の分配孔が形成されたシャワーヘッドを含む、請求項9に記載の基板処理装置。
- 前記工程室と前記プラズマ室は、前記イオン遮断部を挟んで、互いに当接して一体に構成される、請求項9に記載の基板処理装置。
- 前記プラズマ室は、前記工程室と離隔して配置されたリモートプラズマ室である、請求項9に記載の基板処理装置。
- 前記イオン遮断部は、前記プラズマ発生空間で発生した前記ラジカルが前記内部空間に流動する複数の貫通孔が形成される、請求項9に記載の基板処理装置。
- 前記イオン遮断部は、前記第1の処理ガスのプラズマを構成するイオンと電子が吸収されるように接地される、請求項9に記載の基板処理装置。
- フッ素を含有する第1の処理ガスのプラズマ発生空間を提供するプラズマ室と、
前記プラズマ室に供給された前記第1の処理ガスを、プラズマ状態に励起するように電源を与えるプラズマ源ユニットと、
前記プラズマ室の下方に設けられ、アンモニアを含む第2の処理ガスが供給される内部空間を有する工程室と、
前記内部空間において、シリコン酸化膜及びシリコン窒化膜が形成された基板を支持する支持ユニットと、
前記プラズマ室と前記工程室の間に設けられ、前記第1の処理ガスのプラズマを構成するイオンと電子が吸収され、前記第1の処理ガスのプラズマを構成するフッ素ラジカルが選択的に下方に通るイオン遮断部と、
前記内部空間を、前記フッ素ラジカルと前記アンモニアを含む第2の処理ガスが混合した反応ガスを生成する反応ガス発生空間と、前記反応ガスを用いて、前記基板を処理する処理空間とに区画し、前記反応ガス発生空間から前記処理空間に前記反応ガスが流動する複数の分配孔が形成されたシャワーヘッドと、
前記基板が前記処理空間において前記反応ガスに露出する基板処理ステップを含む単位サイクルが少なくとも1回以上行われ、前記単位サイクルにおいて、前記基板処理ステップは、前記反応ガスが、前記シリコン酸化膜と反応し、前記シリコン窒化膜と反応する前の工程区間の間だけ行われるように、前記第1の処理ガス及び前記第2の処理ガスのガス供給を制御するか、前記プラズマ源ユニットの電源印加を制御する制御信号を出力する制御ユニットとを含む、基板処理装置。
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