JP2023099468A - 電界発光表示装置 - Google Patents
電界発光表示装置 Download PDFInfo
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- 239000000463 material Substances 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000002019 doping agent Substances 0.000 claims abstract description 10
- 230000005525 hole transport Effects 0.000 claims description 181
- 230000000903 blocking effect Effects 0.000 claims description 25
- 238000005401 electroluminescence Methods 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 12
- 150000004985 diamines Chemical class 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 344
- 239000010409 thin film Substances 0.000 description 43
- 239000004065 semiconductor Substances 0.000 description 22
- 239000003990 capacitor Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 15
- 238000002347 injection Methods 0.000 description 15
- 239000007924 injection Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000011810 insulating material Substances 0.000 description 12
- 239000004020 conductor Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000002209 hydrophobic effect Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000002220 fluorenes Chemical class 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 150000001716 carbazoles Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910002668 Pd-Cu Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- 229940058303 antinematodal benzimidazole derivative Drugs 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 125000003785 benzimidazolyl group Chemical class N1=C(NC2=C1C=CC=C2)* 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 150000005041 phenanthrolines Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 125000001567 quinoxalinyl group Chemical class N1=C(C=NC2=CC=CC=C12)* 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/156—Hole transporting layers comprising a multilayered structure
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
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- H10K50/00—Organic light-emitting devices
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- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H10K50/18—Carrier blocking layers
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
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- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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- H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
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- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (10)
- 複数の副画素が定義された基板と、
前記基板上の各副画素に備えられた第1電極と、
前記第1電極上の第1正孔輸送層と、
前記第1正孔輸送層上の第2正孔輸送層と、
前記第2正孔輸送層上の第3正孔輸送層と、
前記第3正孔輸送層上の発光物質層と、
前記発光物質層上の電子輸送層と、
前記電子輸送層上の第2電極を含み、
前記第1正孔輸送層は、P型ドーパントと第1正孔輸送物質を含み、前記第2正孔輸送層は、前記第1正孔輸送物質を含み、前記第3正孔輸送層は、第2正孔輸送物質を含み、
前記第1正孔輸送層と前記第2正孔輸送層の総厚さは、前記第3正孔輸送層の厚さより大きい、もしくは同じである電界発光表示装置。 - 前記第1正孔輸送層と前記第2正孔輸送層の総厚さは、前記第3正孔輸送層の厚さより大きく、
前記第1正孔輸送層と前記第2正孔輸送層の総厚さと、前記第3正孔輸送層の厚さの比は、1.8:1である、請求項1に記載の電界発光表示装置。 - 前記第2正孔輸送物質は、前記第1正孔輸送物質より高い屈折率を有する、請求項1に記載の電界発光表示装置。
- 前記第2正孔輸送物質は、460nm波長において2.1以上の屈折率を有する、請求項3に記載の電界発光表示装置。
- 前記第1正孔輸送物質は、モノアミン系化合物であり、前記第2正孔輸送物質は、ジアミン系化合物である、請求項1に記載の電界発光表示装置。
- 前記複数の副画素は、第1副画素、第2副画素、第3副画素を含み、
前記第1副画素と前記第2副画素のそれぞれには、前記第3正孔輸送層と前記発光物質層との間において第4正孔輸送層がさらに備えられ、
前記第4正孔輸送層は、前記第1正孔輸送物質を含む、請求項1に記載の電界発光表示装置。 - 前記第3正孔輸送層と前記発光物質層との間に位置する電子遮断層と、
前記発光物質層と前記電子輸送層との間に位置する正孔遮断層をさらに含む、請求項1~請求項8のうち、いずれか1項に記載の電界発光表示装置。 - 前記第2電極上において、有機キャッピング層および/または無機キャッピング層をさらに含む、請求項9に記載の電界発光表示装置。
Applications Claiming Priority (2)
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KR10-2021-0194126 | 2021-12-31 | ||
KR1020210194126A KR20230103320A (ko) | 2021-12-31 | 2021-12-31 | 전계발광 표시장치 |
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JP2023099468A true JP2023099468A (ja) | 2023-07-13 |
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Country Status (7)
Country | Link |
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US (1) | US20230217673A1 (ja) |
JP (1) | JP2023099468A (ja) |
KR (1) | KR20230103320A (ja) |
CN (1) | CN116437688A (ja) |
DE (1) | DE102022132327A1 (ja) |
GB (1) | GB2614787A (ja) |
TW (1) | TWI831423B (ja) |
Family Cites Families (11)
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KR101464270B1 (ko) * | 2012-08-24 | 2014-11-21 | 엘지디스플레이 주식회사 | 유기발광다이오드 및 그 제조 방법 |
CN102931355B (zh) * | 2012-11-09 | 2015-12-09 | 四川虹视显示技术有限公司 | Oled器件 |
WO2014082308A1 (zh) * | 2012-11-30 | 2014-06-05 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
KR102090714B1 (ko) * | 2013-08-23 | 2020-03-19 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
KR102093628B1 (ko) * | 2013-10-10 | 2020-03-26 | 엘지디스플레이 주식회사 | 유기전계 발광소자 및 이의 제조 방법 |
KR20160060536A (ko) * | 2014-11-19 | 2016-05-30 | 삼성디스플레이 주식회사 | 유기 전계 발광 소자 |
JP2018081855A (ja) * | 2016-11-17 | 2018-05-24 | 株式会社ジャパンディスプレイ | 有機el表示装置の製造方法 |
CN106654049B (zh) * | 2016-12-29 | 2018-12-18 | 上海天马有机发光显示技术有限公司 | 覆盖层、包括所述覆盖层的oled显示面板和电子设备 |
CN108997191A (zh) * | 2018-07-12 | 2018-12-14 | 赵东敏 | 一种有机电致发光器件及显示装置 |
KR20210084744A (ko) * | 2019-12-27 | 2021-07-08 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함한 장치 |
CN113594379A (zh) * | 2020-07-27 | 2021-11-02 | 广东聚华印刷显示技术有限公司 | 电致发光器件及其制作方法和发光装置 |
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2021
- 2021-12-31 KR KR1020210194126A patent/KR20230103320A/ko unknown
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2022
- 2022-09-27 US US17/953,523 patent/US20230217673A1/en active Pending
- 2022-10-19 TW TW111139669A patent/TWI831423B/zh active
- 2022-11-03 CN CN202211374127.0A patent/CN116437688A/zh active Pending
- 2022-11-04 GB GB2216419.8A patent/GB2614787A/en active Pending
- 2022-11-11 JP JP2022181449A patent/JP2023099468A/ja active Pending
- 2022-12-06 DE DE102022132327.7A patent/DE102022132327A1/de active Pending
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TW202329502A (zh) | 2023-07-16 |
CN116437688A (zh) | 2023-07-14 |
GB2614787A (en) | 2023-07-19 |
KR20230103320A (ko) | 2023-07-07 |
DE102022132327A1 (de) | 2023-07-06 |
TWI831423B (zh) | 2024-02-01 |
US20230217673A1 (en) | 2023-07-06 |
GB202216419D0 (en) | 2022-12-21 |
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