JP2023070552A - Crystal vibration device with thermistor - Google Patents

Abstract

To provide a crystal vibration device with temperature sensor which responds to microminiaturization and ultra-thinning, stably and appropriately detects a temperature fluctuation relating to the crystal vibration device and is improved in electrical characteristics.SOLUTION: A crystal vibration device with thermistor comprises: a package 1; an upper storage part 11A and a lower storage part 11B; a crystal diaphragm 2; a thermistor; and a lid 3. The crystal diaphragm 2 is stored in the upper storage part 11A. The thermistor is stored in the lower storage part 11. The lid 3 seals the upper storage part 11A hermetically. The thermistor includes a veneer thermistor blank as a base material, a pair of operation electrodes 41 and 42 is formed on one surface, and a relay electrode 43 is formed on the other principal surface.SELECTED DRAWING: Figure 3

Description

The present invention relates to a crystal oscillation device with a thermistor in which a crystal oscillation plate and a thermistor are electrically connected to a package.

In recent years, with the increasing precision of various electronic devices, there is a demand for temperature compensation type crystal oscillation circuits that compensate for frequency fluctuations due to changes in environmental temperature. A thermistor crystal oscillator device with a thermistor attached as a temperature sensor is widely used.

By measuring the ambient temperature of the crystal oscillator with a thermistor and transmitting the frequency information and temperature information to the externally mounted temperature compensation circuit, it is possible to obtain a temperature-compensated frequency signal and improve the operation of electronic equipment. accuracy can be maintained.

Such a crystal oscillation device with a thermistor has a configuration in which a crystal oscillation plate having an excitation electrode formed therein is housed in a package made of ceramic, and a thermistor is attached to the outside of the ceramic package to detect the environmental temperature surrounding the crystal oscillator. ing. See Patent Document 1.

The thermistor has a laminated structure in which a plurality of thermistor material layers and a plurality of working electrodes are laminated, and those having a thickness of about 0.3 mm to 0.1 mm are commercially available and used.

Patent No. 5900582

The thermistor described above is required to detect temperature changes surrounding the crystal oscillator with a short time lag. However, the thermistors that have been used so far have a laminated structure, which requires a certain thickness (height). Due to such a configuration, there may be a difference between the temperature of the crystal oscillator and the detected temperature of the thermistor as a temperature sensor.

In such a case, the temperature of the crystal oscillator cannot be accurately detected, and the temperature compensation circuit may not be able to properly compensate for the temperature, so that an accurate frequency signal cannot be provided to the electronic device. This sometimes degrades the operational reliability of the electronic device.

The present invention has been made in view of the above problems. An object of the present invention is to provide a crystal oscillator device with a temperature sensor.

A crystal oscillation device with a thermistor according to the present invention comprises a single-plate crystal oscillation plate having an excitation electrode formed on its surface, a single-plate thermistor having an operating electrode formed on its surface, and combining the crystal oscillation plate and the thermistor into one. It is characterized by being housed in a package.

An excitation electrode is formed on the surface of the crystal diaphragm, and the thermistor is also a single-plate structure, and an operating electrode is formed on the surface of the thermistor. Since both have a single-plate structure, temperature rise information and temperature drop information are transmitted to the crystal diaphragm and the thermistor with little time lag when there is heat conduction from the outside through the package. As a result, the difference between the detected temperature of the thermistor, which is a temperature sensor, and the temperature of the crystal diaphragm is minimized, and temperature compensation processing based on the frequency information of the crystal diaphragm and the temperature information of the thermistor can be performed accurately and appropriately.

Further, when electrode films are formed on the crystal plate and the thermistor by a PVD film formation method such as a sputtering method or a vacuum deposition method, a thin film structure can be realized and the thermal conductivity of the electrode films can be improved.

The thermistor may have a structure in which electrodes are formed on the surface of a single thermistor base plate, and may have a structure in which a pair of operating electrodes are formed on one main surface. By energizing these operating electrodes, a thermistor function (current change amount detection based on temperature) is obtained.

Also, a relay electrode may be provided on the other main surface of the thermistor base plate. The relay electrode may be formed at a position facing the operating electrode on the front and back surfaces of the main surface. Thus, a terminal as a resistor is formed between a pair of working electrodes formed on the thermistor blank plate, and a conductive path flows from one working electrode to the other working electrode via the relay electrode. With such a configuration, the cross-sectional area of the conductive path is greatly increased, and each working electrode and the relay electrode can be opposed to each other, so that the resistance value can be reduced with a small area, the characteristics can be easily stabilized, and the withstand voltage can be improved. can be done.

Alternatively, the relay electrode may be made of a metal having good thermal conductivity and may be formed on substantially the entire other main surface of the thermistor base plate.

With this configuration, the relay electrode functions as a heat transfer section for the heat transferred to the working electrode of the thermistor, so that the time lag in detecting the temperature change can be minimized.

The single-plate thermistor may have a thickness of 0.05 mm or less.

By setting the thickness of the thermistor to 0.05 mm or less, the heat (temperature fluctuation information) transmitted to the working electrode is quickly transmitted through the thermistor base plate, and the temperature detection capability of the thermistor can be improved.

As for the conductive bonding used here, a conductive resin adhesive may be used for both the conductive bonding of the crystal diaphragm and the conductive bonding of the thermistor. Furthermore, the same resin material may be used for both the resin adhesives used here.

The structure of the package can correspond to a variety of structures. For example, the package may have one storage portion, and the crystal diaphragm and the thermistor may be electrically connected to the storage portion. .

With the configuration of storing them in one storage portion, the crystal diaphragm and the thermistor can be mounted close to each other, thereby reducing the difference in thermal fluctuation between the two.

Furthermore, by using a conductive resin adhesive inside one housing, it is difficult to generate gas after bonding, and the characteristics of the crystal plate can be stabilized. Conventionally, the conductive bonding of laminated thermistors has been done by soldering, but the atmosphere inside the package can be contaminated by residual flux, etc. can stabilize the atmosphere in the package, such as a vacuum or an inert gas atmosphere, and stabilize the characteristics of the crystal diaphragm (the operation of the crystal oscillator).

Also, by using the same conductive resin adhesive, the difference in heat conduction can be eliminated, and the temperature detection accuracy can be improved.

As a package housing configuration, the package has two housings that are vertically open with the substrate sandwiched therebetween, the crystal plate is conductively joined to one of the housings, and the thermistor is conductively joined to the other housing, The crystal diaphragm and the thermistor may be arranged facing each other on the front and back sides of the substrate.

The configuration in which the quartz crystal plate and the thermistor are arranged facing each other on the front and back sides of the substrate eliminates the difference in heat conduction between the two and improves the temperature detection accuracy.

The quartz crystal diaphragm may be an AT-cut or SC-cut quartz diaphragm, or may be an XY-cut quartz diaphragm.

According to the present invention, it is possible to obtain a quartz crystal oscillation device with a temperature sensor that is compatible with ultra-miniaturization and ultra-thinness, appropriately detects temperature fluctuations related to the crystal oscillation device, and has excellent electrical characteristics.

1 is an exploded perspective view showing each configuration of a thermistor-equipped crystal oscillator device according to a first embodiment; FIG. FIG. 2 is a bottom view of FIG. 1 when assembled; FIG. 2 is a cross-sectional view along line AA when FIG. 1 is assembled; FIG. 4 is a diagram showing the configuration of electrode films formed on a crystal diaphragm; FIG. 4 is a diagram showing the configuration of electrode films formed on the thermistor; It is a sectional view concerning a second embodiment. It is a sectional view concerning a third embodiment.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

First Embodiment As shown in FIGS. 1 to 3, the thermistor-equipped crystal oscillation device Xtl according to the first embodiment includes a package 1 having an upper storage portion 11A and a lower storage portion 11B, and the upper storage portion. 11A, a thermistor 4 housed in the lower housing portion 11B, and a lid 3 for hermetically sealing the upper housing portion 11A. 3 is a cross-sectional view taken along the line AA of FIG. 2. FIG.

<Package configuration>
As shown in FIG. 3, the package 1 is made of ceramics and has a rectangular parallelepiped shape as a whole, and has an upper storage portion 11A opening upward and a lower storage portion 11B opening downward. The upper housing portion 11A and the lower housing portion 11B are configured such that the closed portions (bottom portions) are back to back with respect to the substrate 11C.

The upper storage portion 11A has a recessed rectangular parallelepiped storage structure that opens upward, and mounting electrodes 16 and 17 made of metal films are formed on the bottom portion of the upper storage portion 11A. These mounting electrodes 16 and 17 are formed side by side in the short side direction of the package. A rectangular sealing portion 10 positioned higher than the bottom portion is provided on the outer peripheral portion of the upper storage portion 11A, and a metal film layer is formed on the sealing portion 10. As shown in FIG.

Each of the mounting electrodes 16 and 17 is composed of a plurality of metal layers, which are laminated in order of a W (tungsten) layer, a Ni (nickel) layer, and an Au (gold) layer. The W layer is integrally formed by firing together with the ceramic material forming the package, and the Ni layer and the Au layer are formed on the W layer by plating. The sealing portion 10 also has a metal layer structure similar to that of the mounting electrodes 16 and 17, and has a laminated structure of a W layer, a Ni layer, and an Au layer. Mounting electrodes 18, 19 and mounting electrodes 12, 13, 14, 15, which will be described later, are also manufactured by the same manufacturing method, and each have a layer structure in which a W layer, a Ni layer, and an Au layer are laminated in this order. ing.

The lower housing portion 11B has a concave rectangular parallelepiped housing structure that opens downward, and mounting electrodes 18 and 19 made of metal films are formed on the bottom portion of the lower housing portion 11B. These mounting electrodes 18 and 19 have a rectangular shape with long sides and short sides, and are formed so that the long sides of both mounting electrodes face each other in the direction along the long side of the package. It should be noted that both of these mounting electrodes may be formed so as to line up in the direction along the short side of the package.

Mounting electrodes 12, 13, 14, and 15 are provided at four corners of the lower housing portion 11B at positions higher than the bottom portion. The mounting electrodes 12 and 14 are electrically connected to the mounting electrodes 16 and 17, and the mounting electrodes 13 and 15 are electrically connected to the mounting electrodes 18 and 19 by internal wiring of the package 1. there is

《Structure of crystal plate》
The crystal diaphragm 2 is made of an AT-cut crystal diaphragm and has a rectangular plate shape as a whole. The crystal diaphragm 1 has excitation electrodes 21 and 22 formed in the central portions of its front and back sides. there is The excitation electrodes 21 and 22 have a rectangular shape, and the excitation electrode 21 on one main surface of the crystal diaphragm is connected to the short side of the one main surface of the crystal diaphragm by the extraction electrode 21a from one corner of the short side. The excitation electrodes 22 on the other main surface of the crystal plate are drawn out from one corner of the short side to the short side of the other main surface of the crystal plate by lead electrodes 22a. As a result, the extraction electrodes 21a and 22a are extracted to one short side of the crystal plate.

These excitation electrodes 21 and 22 and extraction electrodes 21a and 22a are formed by stacking thin metal films. Specifically, as shown in FIG. 4, a Ti (titanium) layer is formed in contact with the crystal plate. and an Au (gold) layer is formed thereon. The structure of the metal film may be other than the structure described above. For example, a well-known metal structure such as a Cr (chromium) layer as a base metal and an Ag (silver) layer as an upper layer can be used.

By forming a Ti layer or a Cr layer in contact with the crystal plate, the adhesion of the metal film to the crystal plate is good, and a stable excitation electrode base can be formed. In addition, by forming the Au layer as the main layer on the surface layer, the long-term quality stability of the excitation electrode film is ensured, and the thermal conductivity is also good, so changes in the environmental temperature can be applied to the crystal diaphragm with little time lag. I can tell you.

In addition, by using an Au layer as the main layer and forming an ultra-thin Cr layer on top of it, or by exposing the underlying metal layer of the lower layer to the upper layer by thermal diffusion, the bondability with the conductive resin adhesive described later can be improved. A configuration (formation of a functional layer) that improves the may be adopted.

These excitation electrodes and extraction electrodes are obtained by integrally laminating metal film layers of both electrodes by a well-known PVD film formation method such as a vacuum deposition method or a sputtering method.

In this embodiment, an AT-cut crystal diaphragm is used as the crystal diaphragm, but an SC-cut crystal diaphragm or an XY-cut tuning-fork crystal diaphragm may be used.

<Configuration of thermistor>
The thermistor 4 functions as a temperature sensor and is a thin single-plate NTC thermistor as a whole. The thermistor 4 has a rectangular thermistor base plate 40 as a base material and has a thickness G2. Rectangular working electrodes 41 and 42 are formed on one main surface of the thermistor blank plate 40 with a constant interval G1 in the long side direction. These operating electrodes 41 and 42 have a rectangular configuration having long sides and short sides, and the long sides have dimensions corresponding to the short side dimensions of the thermistor element plate. A rectangular relay electrode 43 is formed on the entire other main surface of the thermistor base plate 40 .

The thermistor 4 constitutes an electronic component having a terminal as a resistor with one working electrode 41 and the other working electrode 42 formed on the thermistor base plate 40, and the conductive path extends from the one working electrode 41 to the relay. It flows through electrode 43 to the other working electrode 42 . With such a configuration, the cross-sectional area of the conductive path is greatly increased, and since the paths of the working electrode and the relay electrode can be made to face each other, the resistance value can be lowered with a small area, the characteristics can be easily stabilized, and the withstand voltage can be improved. be able to.

By the way, when the working electrodes 41 and 42 are arranged close to each other, the direct flow path from the working electrodes 41 to 42 becomes dominant, depending on the applied voltage, and the desired resistance value becomes There were things I didn't get. Therefore, in practice, the distance G2a between the working electrode 41 and the relay electrode 43, the distance G2b between the working electrode 42 and the relay electrode 43, and the distance G1 between the working electrodes 41 and 42 satisfy G2a+G2b<G1. settings. By such setting, a desired resistance value can be obtained, and the accuracy as a temperature sensor can be stabilized.

Further, the larger the contact area of the thermistor 4 with the package 1 and the closer the thermistor 4 is to the crystal plate, the more accurately it can detect the temperature of the crystal plate. Therefore, from the aspect of temperature measurement, it is preferable that the working electrode formed on the thermistor be large with respect to the area of the thermistor blank plate. Thereby, the contact area can be increased. However, if the area is too large, a short circuit between adjacent working electrodes or a short circuit due to the conductive bonding material is likely to occur. Further, when the contact area becomes small, the accuracy of temperature detection of the crystal plate is lowered.

Therefore, although depending on the desired resistance value, stable temperature detection can be achieved when the total area of the working electrodes is 40% to 85% of the area of one main surface of the thermistor plate. . If the size is 40% or less, the working electrode of the thermistor becomes too small, and the temperature information of the crystal plate cannot be detected accurately. May reduce detectability. Moreover, if the size is 85% or more, the risk of short circuit including the conductive bonding material described above increases, and if a short circuit occurs, the temperature sensor cannot function.

Next, specific dimensional examples of the thermistor are shown below. The outer size of the thermistor is 0.8 mm long side, 0.6 mm short side, and 0.05 mm thick, and its area is 0.48 mm 2 . The external size of each electrode pad formed on the thermistor base plate is 0.52 mm long side (short side of the thermistor base plate) and 0.3 mm short side (long side of the thermistor base plate). 0.156 mm2. With this configuration, the total area of each electrode pad is set to about 65% of the area of the temperature sensor, and the distance G2a between the electrode pad and the relay electrode and the distance G2a between the electrode pad 42 and the relay electrode 43 are Each G2b is set to 0.05 mm, and the distance G1 between the electrode pads is set to 0.12 mm, so that G2a+G2b<G1 is established.

Other specific examples are shown below. The outer size of the thermistor is 0.7 mm long side, 0.6 mm short side, and 0.04 mm thick, and its area is 0.42 mm 2 . The external size of each electrode pad formed on the thermistor base plate is 0.58 mm long side (short side of the thermistor base plate) and 0.3 mm short side (long side of the thermistor base plate). 0.174 mm2. With such a configuration, the total area of each electrode pad is set to about 83% of the area of the temperature sensor. Each G2b is set to 0.04 mm, and the distance G1 between the electrode pads is set to 0.09 mm, so that G2a+G2b<G1 is established. Note that the above dimensions may be appropriately designed according to the size and characteristics of the crystal oscillation device and the required specifications of the crystal oscillation device with a temperature sensor.

For a single-plate thermistor, for example, a Mn-Fe-Ni-Ti-based material is made into a slurry with a binder or the like, and a green sheet of a thermistor wafer is produced by using a thick film forming technique such as a screen printing technique or a doctor blade technique. A plate-shaped thermistor wafer is formed by sintering using a sintering technique.

An electrode film (metal film) is formed on this single-plate thermistor wafer by sputtering, and patterning is performed using a photolithographic technique. As a specific metal film layer (metal material), as shown in FIG. 5, a Ti (titanium) layer is formed as a base layer in contact with the thermistor base plate, and a TiO2 (titanium oxide) layer is formed thereon as a barrier layer. , a NiTi layer made of an alloy of a Ni (nickel) layer and a Ti layer is formed thereon, and an Au (gold) layer is formed as a main layer on the surface thereof.

When the laminated film structure of the Ti, TiO2, NiTi, and Au layers is adopted, when the thermistor is finally solder-bonded to the mounting board, solder erosion is unlikely to occur, and stable conductive bonding can be achieved. There is It should be noted that the above laminated structure may have a structure in which the TiO2 layer is not formed.

Moreover, the metal film structure of the electrode pads 41 and 42 and the metal film structure of the relay electrode 43 may be different. Alternatively, the metal film structure of the relay electrode may be a laminated structure of a Ti film and an Au film. As examples of film thicknesses of the metal films, the working electrodes 41 and 42 may have a Ti film of 2500 Å, a NiTi film of 1500 Å, and an Au film of 1500 Å. As for the relay electrode 43, the thickness of the Ti film can be 50 Å and 1500 Å. Incidentally, the thickness of the working electrodes 41 and 42 may be the same as that of the relay electrode, that is, the thickness of the Ti film is 50 Å and 1500 Å. In this case, the working electrode and the relay electrode can be formed at once in the same film formation environment.

Alternatively, a Cr (chromium) layer is formed in contact with the thermistor base plate, a NiCr layer made of an alloy of Ni and Cr layers is formed thereon, and an Au (gold) layer is adopted as the uppermost layer. may

By forming a Ti layer or a Cr layer in contact with the thermistor base plate, the adhesion of the metal film to the crystal plate is good, and a stable excitation electrode base can be formed. In addition, by forming an Au layer as the uppermost layer, long-term quality stability of the excitation electrode film is ensured, and thermal conductivity is also good, so changes in environmental temperature can be transmitted to the thermistor base plate with little time lag. .

By using an Au layer as the upper layer and forming an ultra-thin Cr layer on the upper layer, or by exposing the underlying metal layer of the lower layer to the upper layer by thermal diffusion, the bondability with the conductive resin adhesive described later can be improved. You may adopt the structure which improves.

By forming a metal film on a single-plate thermistor base plate by PVD film formation such as sputtering or vacuum deposition, an extremely thin plate-like thermistor can be obtained. The surface roughness of the plate-shaped thermistor may be reduced by lapping and polishing the surface of the thermistor wafer. With such a configuration, the electrode film (metal film) can be stably formed and the manufacturing accuracy can be improved, so that the performance as a temperature sensor can be highly accurate.

By making the thermistor blank plate into a single plate structure, the heat input from the working electrode or the like can reach the input heat temperature of the thermistor blank plate in a short period of time. That is, the single-plate thermistor 4 can detect changes in the external temperature with little time lag. In particular, by setting the thickness of the thermistor plate to 0.05 mm or less, the heat (temperature fluctuation information) transmitted to the working electrode is quickly transferred through the thermistor plate, and the external temperature change can be followed extremely quickly.

In addition, by using Au for the operating electrode and the relay electrode formed on the thermistor base plate, it is possible to improve heat conduction. be able to.

In addition, in the present embodiment, the metal film used in the relay electrode provided on the other main surface of the thermistor base plate functions as a heat conduction part, so that the thermal response speed of the entire thermistor can be improved, and the external temperature change can be reduced. Detection can be performed with less time lag.

In particular, in the structure using the Au layer as the main layer of the working electrode and the relay electrode, the heat transfer performance can be improved, so that the external temperature change can be detected with less time lag.

《Airtight sealing with a lid》
The lid 3 is made of a thin metal plate or ceramic plate and has a rectangular shape corresponding to the external size of the sealing portion 10 of the package. The configurations of the lid and the sealing portion differ depending on the hermetic sealing method of the package. For example, when the lid 3 and the sealing portion 10 are joined by seam welding, the lid uses Kovar as a core material and has a Ni-plated film on its surface. A structure in which a ring-shaped metal frame is brazed is used for the sealing portion, and the lid and the metal frame are joined by seam welding in, for example, a vacuum atmosphere or an inert gas atmosphere. As a result, the inside of the package (the inside of the upper housing portion) can be kept in a steady state of a vacuum atmosphere or an inert gas atmosphere.

When hermetic sealing is performed by soldering with a metal brazing material such as AuSn brazing material, for example, the lid is preformed with AuSn brazing material in a circumferential shape, and the upper layer of the sealing portion is Au-plated. By heating both in a predetermined atmosphere and temperature environment, hermetic sealing by metal brazing can be achieved.

《Assembly of crystal oscillation device with thermistor》
An assembly example of the thermistor-equipped crystal oscillator device Xtl is described below.
A pasty conductive resin adhesive S1 is applied to the mounting electrodes 16 and 17 of the upper housing portion 11A of the package by using a dispenser or the like. The conductive resin adhesive S1 is made of, for example, a silicone resin adhesive containing a metal filler, but other resin materials such as polyimide resin may be used.

A crystal diaphragm 2 having electrodes formed thereon is mounted on the applied conductive resin adhesive. Specifically, the crystal diaphragm is mounted in the upper housing so that the lead electrodes 21a and 22a are bonded to the conductive resin adhesive S1. Then, the conductive resin adhesive is hardened by heating to electrically connect (electrically and mechanically) the crystal diaphragm 2 and the mounting electrodes 16 and 17 . Incidentally, the conductive resin adhesive may be reapplied from above the crystal plate as necessary. In this embodiment, a configuration in which the coating is applied again is exemplified.

Next, the lid is used to hermetically seal the upper storage portion, and the hermetic sealing is performed by joining the lid 3 to the sealing portion. In this embodiment, the metal brazing material (AuSn brazing material) S2 is used for metal brazing material sealing.

After that, the thermistor is electrically connected to the lower housing. A conductive resin adhesive S1 is applied on the mounting electrodes 18 and 19 by a dispenser or the like, and the thermistor is mounted in the lower housing so that the operating electrodes 41 and 42 correspond to the conductive resin adhesive. Then, the conductive resin adhesive is hardened by heating, and the thermistor 4 and the mounting electrodes 18 and 19 are conductively joined (electrically and mechanically joined). It should be noted that the thermistor may be conductively joined by soldering.

Then, a resin material is injected into the lower storage portion using a dispenser or the like to cover the thermistor 4 with the resin material M, and then the resin material M is cured by heating. In this embodiment, a polyimide resin is used as the resin material M, but other resin materials may be used. Since the thermistor is thereby protected from the outside air, stable temperature detection can be performed.

When the thermistor is conductively joined by soldering, it is preferable that the thickness of the Ti film is about 2500 Å, the NiTi film is about 1500 Å, and the Au film is about 1500 Å. After soldering, the Au layer on the surface of the operating electrode may be eaten by the solder and disappear from the electrode film structure. can be ensured. A TiO2 film having a thickness of, for example, about 5 to 30 Å may be formed on the upper surface of the Ti film. In this case, the underlying Ti layer can be protected from solder.

A configuration in which the resin material M is not used may be used, and a configuration in which the resin material M is injected only into the bottom portion of the lower storage portion may be used. In the case of the configuration in which only the bottom portion is filled, the mounting electrodes 18 and 19 and the operating electrodes 41 and 42, which are joined with the conductive resin adhesive, are covered and protected by the resin material, and the relay electrode 43 is exposed. , the bonding strength of the thermistor 4 can be ensured, and the ambient temperature can be detected with less time lag.

After that, the thermistor-equipped crystal oscillator device Xtl is completed through a predetermined characteristic test.

In the first embodiment, both the quartz plate and the thermistor are single-plate structures, and an electrode film made of a metal film layer is formed on the surface thereof. The main layers of both metal film layers are configured using the same Au. With such a configuration, temperature rise information and temperature drop information are transmitted to the crystal diaphragm and the thermistor with little time lag even when there is heat conduction through the package, for example. As a result, the difference between the detected temperature of the thermistor, which is a temperature sensor, and the temperature of the crystal diaphragm is minimized, and temperature compensation processing based on the frequency information of the crystal diaphragm and the temperature information of the thermistor can be performed accurately and appropriately.

Second Embodiment A second embodiment will be described with reference to FIG.
In the second embodiment, the crystal plate 2 and the thermistor 4 are housed inside the housing portion of the package 5 . The package 5 is made of ceramic with internal wiring formed therein, and has a storage portion 51 having an opening at the top. Mounting electrodes 54 and 55 (55 is not shown) for the crystal plate and mounting electrodes 56 and 57 for the thermistor are formed at the bottom of the storage portion 51 . Mounting electrodes 52 and 53 are formed on the bottom surface.

As in the first embodiment, the crystal plate 2 is made of a rectangular AT-cut crystal plate as a base material, and excitation electrodes 21 and 22 and extraction electrodes 21a and 22a (not shown) are formed on both main surfaces. Configuration. The thermistor 4 has a pair of operating electrodes 41 and 42 formed on one main surface at a predetermined interval, and does not have the relay electrode shown in the first embodiment. Electrode films for these crystal diaphragms and thermistors are formed by a PVD film formation method such as sputtering. The quartz plate 2 and the thermistor 4 are bonded with the same conductive resin adhesive S1, and are conductively bonded to the mounting electrodes by heating and curing. After that, they are hermetically sealed and joined by the lid 3 .

In the second embodiment, a single-plate quartz plate and a single-plate thermistor are arranged side by side in one housing and mounted. Further, both of them have electrodes formed of a metal film layer using Au as a main layer by a PVD film forming method. As a result, both of them can be changed in temperature without a time lag due to changes in the environmental temperature, and the height of the thermistor-equipped crystal oscillation device can be reduced. Moreover, since the same conductive resin adhesive is used for conductive bonding, the internal atmosphere after airtight sealing is stabilized, and variations in characteristics can be suppressed. In addition, since the heat curing of the adhesive can be performed all at once, the productivity is excellent and the cost can be reduced.

Third Embodiment A third embodiment will be described with reference to FIG.
In the third embodiment, the crystal plate 2 and the thermistor 4 are housed in the housing portion of the package 6 so as to be arranged in the height direction. The package 6 is made of ceramic with internal wiring formed therein, and has a housing portion 61 having an opening at the top. A stepped portion 61a is provided in the storage portion 61, and mounting electrodes 62 and 63 (63 is not shown) are formed on the stepped portion. Mounting electrodes 64 and 65 for a thermistor are formed on the bottom of the housing portion 61 . Mounting electrodes 67 and 68 are formed on the bottom surface.

As in the first embodiment, the crystal plate 2 is made of an AT-cut crystal plate as a base material, and has excitation electrodes 21 and 22 and extraction electrodes 21a and 22a (not shown) formed on both main surfaces. The thermistor 4 has a pair of operating electrodes 41 and 42 formed on one main surface thereof with a predetermined spacing, and a relay electrode 43 provided on the entire other main surface. In the third embodiment, the pair of working electrodes are each rectangular with long sides and short sides, but the non-electrode portions 41a and 42a where the ends of the electrode films do not extend to the ends of the thermistor element plate. is provided. With such a configuration, even if the applied amount of the conductive resin adhesive is too large, it is unlikely that the applied amount of the conductive resin adhesive will reach the relay electrodes formed above, and short circuits between the electrodes due to the conductive resin adhesive can be prevented. Note that this non-electrode portion may be provided on the outer periphery on the side of the relay electrode.

Furthermore, in the third embodiment, relay electrodes are arranged below the excitation electrodes 21 and 22 formed on the crystal diaphragm. The diaphragm is vertically sandwiched between metallic materials. As a result, an electromagnetic shielding effect can be obtained in which external noise does not reach the crystal plate.

Electrode films for these crystal diaphragms and thermistors are formed by a PVD film formation method such as sputtering. The quartz plate 2 and the thermistor 4 are bonded with the same conductive resin adhesive S1, and are conductively bonded to the mounting electrodes by heating and curing. After that, they are hermetically sealed and joined by the lid 3 .

In the third embodiment, a single-plate crystal diaphragm and a single-plate thermistor with electrodes formed by a PVD film forming method are arranged in the vertical direction and mounted in one housing. As a result, the temperature of both can be changed without a time lag in response to environmental temperature changes. In addition, since the same conductive resin adhesive is used for conductive bonding, the internal atmosphere after airtight sealing is stabilized, and variations in characteristics can be suppressed. In addition, since the heat curing of the adhesive can be performed all at once, the productivity is excellent and the cost can be reduced.

The embodiments disclosed this time are exemplifications in all respects and are not grounds for restrictive interpretation. Therefore, the technical scope of the present invention is not to be interpreted only by the above-described embodiments, but is defined based on the claims. In addition, all changes within the meaning and range of equivalence to the claims are included.

1, 5, 6 Package 11A Upper storage portion 11B Lower storage portion 12, 13, 14, 15, 52, 53, 67, 68 Mounting electrodes 16, 17, 18, 19, 54, 55, 56, 57, 62, 63 , 64, 65 Mounting electrode 2 Crystal plate 21, 22 Excitation electrode 3 Lid 4 Thermistor 41, 42 Operating electrode 43 Relay electrode S1 Conductive resin adhesive S2 Metal brazing material M Resin material

Claims (3)

a single-plate crystal diaphragm having an excitation electrode formed on its surface;
a single-plate thermistor having a working electrode formed on its surface;
A crystal oscillation device with a thermistor, wherein the crystal oscillation plate and the thermistor are housed in one package. 2. The crystal oscillation device with a thermistor according to claim 1, wherein the package has one storage portion, and the crystal oscillation plate and the thermistor are electrically connected to the storage portion. The package has two housings that are vertically open with the substrate sandwiched therebetween. The crystal plate is electrically connected to one of the housings, and the thermistor is conductively bonded to the other housing. 2. The crystal oscillation device with a thermistor according to claim 1, wherein the thermistor is arranged facing the front and back of the substrate.

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