JP2023063266A - マイクロ発光ダイオードパッケージ構造 - Google Patents
マイクロ発光ダイオードパッケージ構造 Download PDFInfo
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- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
よって、発光ダイオードパッケージ構造、および、その形成方法をさらに改善して、製造要求を満たす発光ダイオードディスプレイ装置を製造する必要がある。
201、301、401…表面
204、304、304R、404…接着剤層
205、206、208、210、305、306、308、310、405、406、408、410…マイクロ発光ダイオード
205b、206b、208b、210b、212b、305b、306b、308b、310b、405b、406b、408b、410b、412b…背面
206p、208p、210p、306p、308p、310p、406p、408p、410p…電極
212、312、412…制御装置
212p、312p…接触パッド
216、222、316…絶縁層
216a、216b、216c、216d、222a、240a、240b、240c、316a、316b、316c、340a、340b、340c、416a、416b…開口部
220、320、420…再分配層
220-1、320-1、420-1…第一側面
220-2、320-2、420-2…第二側面
224、324…ボンディングパッド
226、326…薄膜層
236、246、336、436…遮光層
240、340、440…分布ブラッグ反射層
250、350、450…可撓性材料層
251…界面
252L、352L、452L…スクライブライン
260、360、460…発光面
500a、500b、500c、500d、500e、500f、500g、500h、500i、500k、500l、500m、500n、500p…マイクロLED構造
AD…面積
AT…総面積
Claims (10)
- マイクロ発光ダイオードパッケージ構造であって、
再分配層と、
前記再分配層上に設置されるとともに電気的に接続される制御装置と、前記再分配層上に設置されるとともに電気的に接続される複数のマイクロ発光ダイオードと、
前記制御装置、および、前記マイクロ発光ダイオードを被覆し、前記マイクロ発光ダイオードが接触する可撓性材料層と、
を有することを特徴とするマイクロ発光ダイオードパッケージ構造。 - 前記制御装置は、マイクロドライバ集積回路装置、マイクロ制御集積回路装置、薄膜トランジスタ装置、または、それらの組み合わせを有することを特徴とする請求項1に記載のマイクロ発光ダイオードパッケージ構造。
- 前記マイクロ発光ダイオードは、複数の電極を有し、且つ、前記再分配層は、前記マイクロ発光ダイオードの電極と接触し、且つ、前記マイクロ発光ダイオードは、それぞれ、前記電極から離れて位置する背面を有し、前記可撓性材料層は、前記マイクロ発光ダイオードの前記背面と接触することを特徴とする請求項1に記載のマイクロ発光ダイオードパッケージ構造。
- 前記マイクロ発光ダイオードのうちの少なくとも一つの前記マイクロ発光ダイオードの背面は、粗い表面であることを特徴とする請求項3に記載のマイクロ発光ダイオードパッケージ構造。
- 前記マイクロ発光ダイオードパッケージ構造はさらに、
前記再分配層と前記可撓性材料層との間に設置され、且つ、前記マイクロ発光ダイオードを囲む遮光層を有することを特徴とする請求項1に記載のマイクロ発光ダイオードパッケージ構造。 - 前記マイクロ発光ダイオードパッケージ構造はさらに、
前記マイクロ発光ダイオードの前記電極に近接し、且つ、前記再分配層と接触する分布ブラッグ反射層を有することを特徴とする請求項3に記載のマイクロ発光ダイオードパッケージ構造。 - 前記分布ブラッグ反射層の面積は、前記マイクロ発光ダイオードパッケージ構造の総面積の10%~95%であることを特徴とする請求項6に記載のマイクロ発光ダイオードパッケージ構造。
- 前記再分配層は、第一側面を有し、且つ、前記制御装置、および、前記マイクロ発光ダイオードは、前記第一側面に設置されることを特徴とする請求項1に記載のマイクロ発光ダイオードパッケージ構造。
- 前記制御装置は、背面と接触パッドを有し、且つ、前記背面は、前記接触パッドから離れ、前記制御装置の前記背面は、前記マイクロ発光ダイオードの前記背面と同じ高さであることを特徴とする請求項3に記載のマイクロ発光ダイオードパッケージ構造。
- マイクロ発光ダイオードパッケージ構造はさらに、
前記再分配層と前記可撓性材料層との間に設置され、且つ、前記制御装置、および、前記マイクロ発光ダイオードを囲む第一絶縁層を有することを特徴とする請求項1に記載のマイクロ発光ダイオードパッケージ構造。
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US202163270654P | 2021-10-22 | 2021-10-22 | |
US63/270,654 | 2021-10-22 | ||
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TW111136672A TWI853311B (zh) | 2021-10-22 | 2022-09-28 | 微型發光二極體封裝結構 |
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2022
- 2022-10-19 CN CN202211279221.8A patent/CN116014051A/zh active Pending
- 2022-10-20 US US17/970,487 patent/US20230131636A1/en active Pending
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