JP2023050719A - Light emission element and light emission device - Google Patents

Abstract

To provide a light emission element and a light emission device capable of reducing variation of a current density distribution and easily protecting p-side outer electrode with a resin member.SOLUTION: A p-side outer electrode includes: a first section extending in a first direction in a plan view; and a plurality of second sections which are extended from the first section toward a first side in the plan view, and positioned apart from each other in the first direction. A plurality of n-side openings include: at least one first opening positioned between second sections adjacent to each other in the plan view; at least one second opening positioned closer to the n-side outer electrode side than the p-side outer electrode in the plan view; and at least one third opening positioned between the first side of the semiconductor structure and an outer edge of a p-side semiconductor layer in the plan view.SELECTED DRAWING: Figure 2

Description

The present invention relates to light-emitting elements and light-emitting devices.

There is a light-emitting element that is joined to a mounting substrate by soldering or the like. Patent Documents 1 and 2, for example, disclose a comb shape as a shape of the p-side external electrode arranged on the mounting surface of the light emitting element in a plan view.

JP 2016-82231 A Japanese Patent Publication No. 2017-535052

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light-emitting element and a light-emitting device capable of reducing variations in current density distribution and easily protecting the p-side external electrode with a resin member.

According to one aspect of the present invention, a light emitting device includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer positioned between the n-side semiconductor layer and the p-side semiconductor layer, and is a semiconductor structure having a first side extending in a first direction, wherein the n-side semiconductor layer has a plurality of connection surfaces exposed from the p-side semiconductor layer and the active layer; An insulating film covering a structure, comprising: a plurality of n-side openings located above the plurality of connection surfaces and exposing the plurality of connection surfaces; and a p-side opening located above the p-side semiconductor layer. an n-side wiring electrode arranged on the insulating film and connected to the plurality of connection surfaces through the n-side opening; and an n-side wiring electrode arranged on the insulating film and connected to the p-side opening. a p-side wiring electrode electrically connected to the p-side semiconductor layer through a p-side wiring electrode; an n-side external electrode disposed on the n-side wiring electrode; A p-side external electrode positioned closer to the first side than the external electrode and having a first portion extending in the first direction in plan view and a first portion extending from the first portion toward the first side in plan view and the p-side external electrode having a plurality of second portions spaced apart from each other in the first direction. The plurality of n-side openings include at least one first opening located between the adjacent second portions when viewed in plan and located closer to the n-side external electrode than the p-side external electrode when viewed in plan. and at least one third opening located between the first side of the semiconductor structure and the outer edge of the p-side semiconductor layer in plan view.

According to the present invention, it is possible to provide a light-emitting element and a light-emitting device in which variations in current density distribution can be reduced and the p-side external electrode can be easily protected by a resin member.

1 is a perspective view of a light emitting device according to one embodiment of the present invention; FIG. 1 is a plan view of a light emitting device according to one embodiment of the present invention; FIG. 3 is a cross-sectional view taken along line III-III of FIG. 2; FIG. FIG. 4 is a plan view of a light emitting device according to a first modification of the invention; FIG. 5 is a plan view of a light emitting device according to a second modification of the invention; FIG. 11 is a plan view of a light emitting device according to a third modified example of the invention; FIG. 11 is a plan view of a light emitting device according to a fourth modification of the invention; 1 is a cross-sectional view of a light emitting device according to one embodiment of the present invention; FIG.

Hereinafter, embodiments will be described with reference to the drawings. In each drawing, the same components are given the same reference numerals. Since each drawing schematically shows the embodiment, the scale, interval, positional relationship, etc. of each member may be exaggerated, or illustration of a part of the member may be omitted. Also, as a cross-sectional view, an end view showing only a cut surface may be shown.

As shown in FIG. 1, a light emitting device 100 according to one embodiment of the present invention includes a light emitting element 101 and a resin member 90. As shown in FIG.

First, the light emitting element 101 will be described.
FIG. 2 is a plan view of the light emitting element 101. FIG. 3 is a cross-sectional view taken along line III-III of FIG. 2. FIG.

As shown in FIG. 3, the light emitting device 101 has a substrate 10 and a semiconductor structure 20 arranged on the substrate 10 . The material of the substrate 10 is, for example, sapphire, silicon, SiC, GaN, or the like. Substrate 10 may protect semiconductor structure 20 . The substrate 10 may be omitted, in which case light from an active layer 22 (to be described later) can be easily extracted to the outside of the semiconductor structure 20 .

The semiconductor structure 20 is a laminate in which a plurality of semiconductor layers made of nitride semiconductors are laminated. The nitride semiconductor has a chemical formula consisting of _{InxAlyGa1 -x-yN} (0≤x≤1, 0≤y≤1, x+y≤1), and the composition ratios x _and y are varied within respective ranges. can include semiconductors of all compositions.

As shown in FIG. 2, the semiconductor structure 20 has a first side 1 extending in the first direction d1 and a second side 2 opposite to the first side 1 and extending in the first direction d1 in plan view. , a third side 3 connecting the first side 1 and the second side 2 and extending in a second direction d2 orthogonal to the first direction d1; 2 and extending in the second direction d2. The first side 1 , the second side 2 , the third side 3 and the fourth side 4 constitute the outer edge of the semiconductor structure 20 . The size of each side of the semiconductor structure 20 is, for example, in the range of 100 μm or more and 2000 μm or less. Further, the semiconductor structure 20 has a first region A1 closer to the first side 1 than the second side 2 and a second region A2 closer to the second side 2 than the first side 1 in plan view. For example, in plan view, the first region A1 is the first side rather than the second side 2 of the two regions defined when the semiconductor structure 20 is bisected by the perpendicular bisector of the third side 3. It is a region close to 1. For example, the second region A2 is the second region of the two regions defined when the semiconductor structure 20 is bisected by the perpendicular bisector of the third side 3 in a plan view rather than the first side 1. This is an area close to Side 2.

As shown in FIG. 3 , semiconductor structure 20 includes an n-side semiconductor layer 21 , a p-side semiconductor layer 23 , and an active layer 22 located between n-side semiconductor layer 21 and p-side semiconductor layer 23 . . In plan view, the outer edge of the semiconductor structure 20 is the outer edge of the n-side semiconductor layer 21 . Accordingly, the first side 1 , the second side 2 , the third side 3 and the fourth side 4 constitute the outer edge of the n-side semiconductor layer 21 .

The n-side semiconductor layer 21 has an n-type layer containing n-type impurities. The p-side semiconductor layer 23 has a p-type layer containing p-type impurities. The n-side semiconductor layer 21 and the p-side semiconductor layer 23 may include undoped layers that are not intentionally doped with n-type impurities or p-type impurities.

The active layer 22 has, for example, a multiple quantum well structure including multiple well layers and multiple barrier layers. For example, InGaN, AlGaN, or the like can be used as the plurality of well layers. For example, GaN, AlGaN, or the like can be used as the plurality of barrier layers. The active layer 22 emits, for example, ultraviolet light or visible light. The emission peak wavelength of ultraviolet light is, for example, 400 nm or less. The active layer 22 can emit, for example, blue light and green light as visible light. The emission peak wavelength of blue light is, for example, 430 nm or more and 490 nm or less. The emission peak wavelength of green light is, for example, 500 nm or more and 540 nm or less.

The n-side semiconductor layer 21 has a light extraction surface 21a located on the substrate 10 side and a plurality of connection surfaces 21b and 21c located on the opposite side of the light extraction surface 21a. The connection surfaces 21 b and 21 c are exposed from the p-side semiconductor layer 23 and the active layer 22 without being covered with the p-side semiconductor layer 23 and the active layer 22 .

As shown in FIG. 2, the connecting surfaces include an inner connecting surface 21b and an outer connecting surface 21c. In plan view, the outer connection surface 21c is located between the first side 1 and the outer edge 23a of the p-side semiconductor layer 23, between the second side 2 and the outer edge 23a of the p-side semiconductor layer 23, between the third side 3 and p It is located between the outer edge 23 a of the side semiconductor layer 23 and between the fourth side 4 and the outer edge 23 a of the p-side semiconductor layer 23 . A plurality of inner connection surfaces 21b are arranged inside the outer edge 23a of the p-side semiconductor layer 23 in plan view. In plan view, the inner connection surface 21b is surrounded by the p-side semiconductor layer 23 . The shape of the inner connection surface 21b in plan view is, for example, circular.

As shown in FIG. 3 , the light emitting device 101 further has a wiring portion 30 arranged on the semiconductor structure 20 . The wiring section 30 has a p-side electrode 41 , a cover film 45 , a first insulating film 51 , a second insulating film 52 , an n-side wiring electrode 61 and a p-side wiring electrode 62 .

The p-side electrode 41 is arranged on the upper surface of the p-side semiconductor layer 23 and electrically connected to the p-side semiconductor layer 23 . The p-side electrode 41 preferably has a reflectance of 60% or more with respect to light from the active layer 22, and more preferably has a reflectance of 70% or more with respect to light from the active layer 22. The p-side electrode 41 is made of a material containing silver (Ag) or aluminum (Al), for example.

The cover film 45 is arranged on the p-side semiconductor layer 23 and covers the top and side surfaces of the p-side electrode 41 . By arranging the cover film 45 , it is possible to reduce the intrusion of moisture into the p-side electrode 41 from the outside, and to reduce the migration of the p-side electrode 41 . The cover film 45 is an insulating film, and by using, for example, a silicon nitride film, it is possible to reduce the intrusion of moisture into the p-side electrode 41 and suitably reduce the migration of the p-side electrode 41 .

The first insulating film 51 covers the semiconductor structure 20 and the cover film 45 . The first insulating film 51 is, for example, a silicon oxide film. The first insulating film 51 is positioned above the plurality of n-side openings 51a to 51e that expose the plurality of connection surfaces 21b and 21c and the p-side semiconductor layer 23 above the connection surfaces 21b and 21c. and a p-side opening 51f. The p-side opening 51 f exposes the p-side electrode 41 on the p-side semiconductor layer 23 .

The n-side wiring electrode 61 is arranged on the first insulating film 51 . The n-side wiring electrode 61 is electrically connected to the n-side semiconductor layer 21 by connecting to the plurality of connection surfaces 21b and 21c through the n-side openings 51a to 51e. Materials for the n-side wiring electrode 61 include, for example, titanium (Ti), gold (Au), aluminum (Al), copper (Cu), silicon (Si), platinum (Pt), and the like.

The p-side wiring electrode 62 is arranged on the first insulating film 51 . The p-side wiring electrode 62 is connected to the p-side electrode 41 through the p-side opening 51f and electrically connected to the p-side semiconductor layer 23 . By arranging the p-side wiring electrode 62, good electrical contact can be achieved between the p-side electrode 41 and a p-side metal member 64, which will be described later. As the material of the p-side wiring electrode 62, for example, the same material as that of the n-side wiring electrode 61 can be used. For example, by including titanium (Ti) in the p-side wiring electrode 62, good electrical contact with the p-side metal member 64 can be achieved. The p-side wiring electrode 62 is connected to the p-side electrode 41 through the p-side opening 51f.

The second insulating film 52 covers the n-side wiring electrode 61 , the p-side wiring electrode 62 and the first insulating film 51 . The second insulating film 52 is, for example, a silicon oxide film. A portion of the n-side wiring electrode 61 and a portion of the p-side wiring electrode 62 are exposed from the second insulating film 52 .

The light emitting element 101 further has an n-side external electrode 71 and a p-side external electrode 72 arranged on the wiring portion 30 .

The n-side external electrode 71 is arranged on the portion of the n-side wiring electrode 61 exposed from the second insulating film 52 . The n-side external electrode 71 is electrically connected to the n-side wiring electrode 61 via the n-side metal member 63 . The n-side metal member 63 can function as a seed layer when the n-side external electrode 71 is grown by plating. Alternatively, the n-side external electrode 71 may be directly connected to the n-side wiring electrode 61 . As a material of the n-side external electrode 71, for example, copper (Cu) can be used. As a material of the n-side metal member 63, for example, titanium (Ti), nickel (Ni), gold (Au), or the like can be used.

The p-side external electrode 72 is arranged on the portion of the p-side wiring electrode 62 exposed from the second insulating film 52 . The p-side external electrode 72 is electrically connected to the p-side wiring electrode 62 via the p-side metal member 64 . The p-side metal member 64 can function as a seed layer when the p-side external electrode 72 is grown by plating. Alternatively, the p-side external electrode 72 may be directly connected to the p-side wiring electrode 62 . As the material of the p-side external electrode 72, for example, the same material as that of the n-side external electrode 71 can be used. As the material of the p-side metal member 64, for example, the same material as that of the n-side metal member 63 can be used.

As shown in FIG. 2, the n-side external electrode 71 is positioned closer to the second side 2 than the p-side external electrode 72 in plan view. The n-side external electrode 71 is located at a position overlapping the second region A2 and away from the first region A1 in plan view.

The p-side external electrode 72 is positioned closer to the first side 1 than the n-side external electrode 71 in plan view. The p-side external electrode 72 is located at a position overlapping the first region A1 and away from the second region A2 in plan view.

The p-side external electrode 72 includes a first portion 73 extending in the first direction d1 in plan view, and extending from the first portion 73 toward the first side 1 of the semiconductor structure 20 in plan view and mutually extending in the first direction d1. and a plurality of spaced apart second portions 74 . In plan view, the plurality of second portions 74 are located between the first side 1 and the first portion 73 . The length of the second portion 74 in the second direction d2 is, for example, 20 μm or more and 1000 μm or less, preferably 100 μm or more and 400 μm or less. Also, the distance between the second portions 74 adjacent in the first direction d1 is, for example, 20 μm or more and 400 μm or less, preferably 50 μm or more and 150 μm or less. By setting the length of the second portion 74 in the second direction d2 and the distance between the second portions 74 adjacent in the first direction d1 to this range, the first opening 51a described later can be easily arranged. can be done.

As shown in FIG. 2, the first insulating film 51 includes a plurality of n-side openings for exposing the connection surfaces 21b and 21c of the n-side semiconductor layer 21, including a first opening 51a, a second opening 51b, and a third opening 51c. The first opening 51a and the second opening 51b expose the inner connecting surface 21b. The third opening 51c exposes the outer connection surface 21c.

At least one first opening 51a is positioned between adjacent second portions 74 of the p-side external electrode 72 in plan view. In the example shown in FIG. 2, one first opening 51a is arranged between the second portions 74 adjacent in the first direction d1. Since there are a plurality of regions between the adjacent second portions 74, a plurality of first openings 51a are arranged in the light emitting element as a whole. In the example shown in FIG. 2 , the first openings 51a are arranged in each of the regions between the second portions 74 . In addition, in the example shown in FIG. 2, a plurality of first openings 51a, one less than the number of second portions 74, are arranged along the first direction d1. In the example shown in FIG. 2, six first openings 51a are arranged along the first direction d1. In the example shown in FIG. 2, of the plurality of first openings 51a arranged between the second portions 74, the first opening 51a closest to the first portion 73 is positioned closer to the first portion 73 than the first side 1 is. is located near the A region between the adjacent second portions 74 that is closer to the first portion 73 tends to have a lower current density than other regions. In the example shown in FIG. 2, of the plurality of first openings 51a arranged between the second portions 74, the first opening 51a closest to the first portion 73 is positioned closer to the first portion 73 than the first side 1 is. be placed close to the Thereby, the first opening 51a is arranged in a region close to the first portion 73 between the adjacent second portions 74, and variation in current density distribution between the second portions 74 can be reduced.

At least one second opening 51b is positioned closer to the n-side external electrode 71 than the p-side external electrode 72 in plan view. In the example shown in FIG. 2, a plurality of second openings 51b, which are larger than the first openings 51a, are arranged along the first direction d1 and the second direction d2 in the second region A2. In the example shown in FIG. 2, 18 second openings 51b are arranged in the second area A2, and 6 first openings 51a are arranged in the first area A1.

At least one third opening 51c is positioned between the first side 1 of the semiconductor structure 20 and the outer edge 23a of the p-side semiconductor layer 23 in plan view. In the example shown in FIG. 2, the same number of third openings 51c as the first openings 51a are arranged along the first direction d1 between the first side 1 and the outer edge 23a of the p-side semiconductor layer 23. It is In the example shown in FIG. 2, there are six first openings 51a and six third openings 51c.

The multiple n-side openings further include fourth openings 51d. In plan view, the fourth opening 51d is formed between the second side 2 and the outer edge 23a of the p-side semiconductor layer 23, between the third side 3 and the outer edge 23a of the p-side semiconductor layer 23, and on the fourth side. 4 and the outer edge 23 a of the p-side semiconductor layer 23 . The fourth opening 51d exposes the outer connection surface 21c. In the example shown in FIG. 2 , the same number of fourth openings 51 d as the third openings 51 c are arranged between the second side 2 and the outer edge 23 a of the p-side semiconductor layer 23 . 2, the same number of fourth openings 51d as the third openings 51c are arranged between the third side 3 and the outer edge 23a of the p-side semiconductor layer . Similarly, in the example shown in FIG. 2 , the same number of fourth openings 51 d as the third openings 51 c are arranged between the fourth side 4 and the outer edge 23 a of the p-side semiconductor layer 23 . In the example shown in FIG. 2, there are six third openings 51c. In the example shown in FIG. 2, the number of fourth openings 51d arranged between the second side 2 and the outer edge 23a of the p-side semiconductor layer 23 is six. In the example shown in FIG. 2, the number of fourth openings 51d arranged between the fourth side 4 and the outer edge 23a of the p-side semiconductor layer 23 is six.

The multiple n-side openings further include a fifth opening 51e arranged in the first region A1. The fifth opening 51e is located between the first opening 51a and the second opening 51b in the second direction d2. The fifth opening 51e is positioned closer to the p-side external electrode 72 than the n-side external electrode 71 in plan view. In the example shown in FIG. 2, the same number of fifth openings 51e as the first openings 51a are arranged along the first direction d1. In the example shown in FIG. 2, there are six first openings 51a and six fifth openings 51e. The fifth opening 51e exposes the inner connecting surface 21b.

The n-side wiring electrode 61 is connected to the inner connection surface 21b of the n-side semiconductor layer 21 through the first opening 51a, the second opening 51b, and the fifth opening 51e. The n-side wiring electrode 61 is connected to the outer connection surface 21c of the n-side semiconductor layer 21 through the third opening 51c and the fourth opening 51d.

As shown in FIGS. 1 and 8, the resin member 90 in the light emitting device 100 is arranged on the surface of the second insulating film 52 in the wiring section 30 to cover the surface of the second insulating film 52 . Also, the resin member 90 covers the side surface of the substrate 10 of the light emitting element 101 and the side surface of the n-side semiconductor layer 21 .

As shown in FIG. 1, the light emitting device 100 includes a wavelength converting member 80. As shown in FIG. For example, the wavelength conversion member 80 is formed in contact with the resin member 90 and the substrate 10 . For the wavelength conversion member 80, for example, translucent resin containing phosphor can be used. Examples of phosphors include yttrium-aluminum-garnet-based phosphors (eg, Y ₃ (Al, Ga) ₅ O ₁₂ :Ce), lutetium-aluminum-garnet-based phosphors (eg, Lu ₃ (Al, Ga) ₅ O _{12 :} Ce), terbium-aluminum-garnet-based phosphors (e.g., _Tb3 (Al, Ga) _5O12 :Ce), CCA-based phosphors (e.g., _Ca10 ( _PO4 ) _{6Cl2 :} Eu), SAE phosphors (e.g. Sr ₄ Al ₁₄ O ₂₅ :Eu), chlorosilicate phosphors (e.g. Ca ₈ MgSi ₄ O ₁₆ Cl ₂ :Eu), β-sialon phosphors (e.g. (Si, Al) ₃ (O, N) ₄ :Eu), α-sialon-based phosphors (eg, Ca(Si, Al) ₁₂ (O, N) ₁₆ :Eu), SLA-based phosphors (eg, SrLiAl ₃ N ₄ :Eu) , nitride phosphors such as CASN phosphors (e.g. CaAlSiN ₃ :Eu) or SCASN phosphors (e.g. (Sr, Ca)AlSiN ₃ :Eu), KSF phosphors (e.g. K ₂ SiF ₆ :Mn), KSAF- _based phosphor (e.g., _{K2Si0.99Al0.01F5.99} :Mn) or _MGF - _based phosphor (e.g., _{3.5MgO.0.5MgF2.GeO2} : _Mn ) Fluoride-based phosphors such as, phosphors having a perovskite structure (e.g., CsPb(F, Cl, Br, I) ₃ ), or quantum dot phosphors (e.g., CdSe, InP, AgInS ₂ or AgInSe ₂ ), etc. can be used.

As shown in FIGS. 1 and 8, the resin member 90 is arranged between the n-side external electrode 71 and the p-side external electrode 72 . Furthermore, the resin member 90 is arranged to surround the n-side external electrode 71 and the p-side external electrode 72 . The resin member 90 covers the side surface of the n-side external electrode 71 and the side surface of the p-side external electrode 72 . Also, the resin member 90 is arranged between the plurality of second portions 74 of the p-side external electrode 72 and covers the side surfaces of the second portions 74 .

An n-side mounting surface 71a of the n-side external electrode 71 opposite to the connection surface with the n-side wiring electrode 61 and a p-side mounting surface 72a of the p-side external electrode 72 opposite to the connection surface with the p-side wiring electrode 62 are exposed from the resin member 90 . The n-side mounting surface 71a and the p-side mounting surface 72a are bonded to the mounting board via a bonding member such as solder.

The resin member 90 contains particles that reflect light from the active layer 22 . The reflectance of the resin member 90, which contains particles having reflectivity to the light from the active layer 22, with respect to the light from the active layer 22 is preferably 60% or more, more preferably 70% or more. preferable. As the resin material of the resin member 90, for example, silicone resin, epoxy resin, or the like can be used. As particles having reflectivity, particles of titanium oxide, aluminum oxide, silicon oxide, or the like can be used, for example.

The current from the p-side external electrode 72 is diffused in the plane direction of the p-side semiconductor layer 23 by the p-side electrode 41 arranged on the p-side semiconductor layer 23 and supplied. Connection surfaces 21b and 21c of the n-side semiconductor layer 21 electrically connected to the n-side external electrode 71 are arranged at positions not overlapping the p-side external electrode 72 in plan view. The n-side openings 51a to 51e that expose the connection surfaces 21b and 21c are also arranged at positions that do not overlap the p-side external electrode 72 in plan view.

According to the embodiment, the p-side external electrode 72 has first portions 73 and second portions 74 , and the first openings 51 a are arranged between the plurality of second portions 74 . As a result, the area of the p-side mounting surface 72a of the p-side external electrode 72 is ensured to be large and the bonding strength to the mounting substrate is enhanced, while the first opening 51a is formed in the first region A1 where the p-side external electrode 72 is arranged. can also be arranged, the number of n-side openings arranged in the first region A1 can be increased. As a result, variations in current density distribution can be reduced.

A plurality of second portions 74 of the p-side external electrode 72 extend from the first portions 73 toward the first side 1 forming the outer edge of the semiconductor structure 20 . As a result, compared to the configuration in which the plurality of second portions 74 extend from the first portion 73 toward the n-side external electrode 71 side, when the light emitting device 100 shown in FIG. The member 90 can easily wrap around. The resin member 90 is formed by wrapping around the side surfaces of the p-side external electrode 72 from the first side 1 side, the second side 2 side, the third side 3 side, and the fourth side 4 side. be. When the plurality of second portions 74 of the p-side external electrode 72 extend from the first portions 73 toward the first side 1 forming the outer edge of the semiconductor structure 20, the resin member 90 from the first side 1 side It is easy to wrap around between the plurality of second portions 74 . That is, the second portion 74 of the p-side external electrode 72 can be easily protected by the resin member 90, and reliability can be improved.

In addition, current is more likely to concentrate around the first opening 51a between the second portions 74 adjacent in the first direction d1 than around the second opening 51b, resulting in strong light emission. The light-reflecting resin member 90 can easily wrap around the first opening 51a between the second portions 74 of the region where strong light emission is likely to occur.

Each distance in the second direction d2 between the plurality of n-side openings arranged in the first region A1 is the first distance, and the distance in the second direction d2 between the plurality of n-side openings arranged in the second region A2 is the first distance. are each second distances. In the example shown in FIG. 2, the distance in the second direction d2 between the first opening 51a and the fifth opening 51e arranged in the first area A1 is the first distance, and Each distance in the second direction d2 between the second openings 51b is the second distance. The first distance and the second distance are different.

The n-side opening exposing the connection surface 21b of the n-side semiconductor layer 21 is arranged at a position separated from the p-side external electrode 72 in plan view. Due to such restrictions on the positions of the n-side openings, the number of n-side openings (first openings 51a and fifth openings 51e) arranged in the first region A1 where the p-side external electrode 72 is located, The number of n-side openings (second openings 51b) arranged in the second region A2 where the n-side external electrode 71 is located may differ. Even in this case, the distances between the plurality of n-side openings arranged in the first region A1 are each set to be the first distance (the distance in the second direction d2 between the first opening 51a and the fifth opening 51e). , the variation in the current density distribution can be reduced in the first region A1. Furthermore, by setting the distances between the plurality of n-side openings arranged in the second region A2 as second distances (the distances between the second openings 51b in the second direction d2), the current Variation in density distribution can be reduced. As a result, variations in current density distribution in the semiconductor structure 20 can be reduced.

In the example shown in FIG. 2, the number of n-side openings arranged in the first area A1 is less than the number of n-side openings arranged in the second area A2. That is, in the example shown in FIG. 2, the number of the first openings 51a and the fifth openings 51e arranged in the first area A1 is greater than the number of the second side openings 51b arranged in the second area A2. few. Therefore, by making the first distance longer than the second distance, the bias in the current density distribution in the first region A1 is reduced, and the variation in the current density distribution between the first region A1 and the second region A2 is reduced. can be reduced.

As described above, the p-side mounting surface 72a is bonded to the mounting board via a bonding member such as solder. Cracks may occur in the bonding member due to warpage of the mounting substrate or the like. The width of the first portion 73 of the p-side external electrode 72 in the second direction d2 is greater than the width of the second portion 74 of the p-side external electrode 72 in the first direction d1. As a result, cracks that may occur in the joint member joined to the p-side mounting surface 72a are formed continuously from one end to the other end of the joint member in the second direction d2 in the region overlapping the first portion 73. less likely to occur. As a result, it is possible to reduce the occurrence of electrical connection problems between the light emitting element 101 and the mounting substrate. For example, the width of the first portion 73 in the second direction d2 can be 1.5 to 3 times the width of the second portion 74 of the p-side external electrode 72 in the first direction d1. Further, as described above, while making the first distance longer than the second distance, the width in the second direction d2 of the first portion 73 of the p-side external electrode 72 is set to the width of the second portion 74 of the p-side external electrode 72. It is preferable to make it larger than the width in one direction d1. As a result, it is possible to reduce the occurrence of failures in electrical connection between the light emitting element 101 and the mounting substrate while reducing the bias in the current density distribution in the first region A1.

Also, the first opening 51a and the third opening 51c are positioned on a straight line parallel to the second direction d2. This can reduce variations in current density distribution between adjacent second portions 74 .

Further, the third opening 51c is not positioned between the second portion 74 and the first side 1 in the second direction d2. As a result, the second portion 74 can be brought closer to the first side 1 . Thereby, the area of the p-side external electrode 72 can be increased. Therefore, the joint member joined to the p-side mounting surface 72a is less likely to be continuously formed from one end to the other end of the joint member in the second direction d2.

FIG. 4 shows a first variant of the invention. The first modification of the present invention differs from the embodiment shown in FIGS. 1 to 3 at least in the arrangement of the first opening 51a and the width of the first portion 73 in the second direction d2. As shown in FIG. 4, a plurality of first openings 51a can be arranged between the second portions 74 adjacent in the first direction d1. This can further reduce variations in current density distribution. Of the plurality of first openings 51a arranged between the second portions 74, the first opening 51a closest to the first portion 73 is arranged at a position closer to the first portion 73 than the first side 1. can be done. A region between the adjacent second portions 74 that is closer to the first portion 73 tends to have a lower current density than other regions. The first opening 51 a closest to the first portion 73 among the plurality of first openings 51 a arranged between the second portions 74 is arranged at a position closer to the first portion 73 than the first side 1 . Thereby, the first opening 51a is arranged in a region close to the first portion 73 between the adjacent second portions 74, and variation in current density distribution between the second portions 74 can be reduced.

FIG. 5 shows a second variant of the invention. The second modification of the present invention differs from the embodiments shown in FIGS. 1 to 3 and the first modification of the present invention at least in the shape of the p-side external electrode 72 in plan view. As shown in FIG. 5, the width in the first direction d1 of the second portions 74 located at both ends in the first direction d1 among the plurality of second portions 74 is set to the width of the second portions 74 located at both ends among the plurality of second portions 74. As shown in FIG. The width in the first direction d1 of the second portion 74 located between the two portions 74 can be made larger. For example, cracks that can occur in bonding members such as solder tend to occur more easily at the corners of the light emitting element 101 . According to the second modification, it is possible to reduce the occurrence of failures in electrical connection between the light emitting element 101 and the mounting substrate due to cracks that may occur in the bonding member at the corners of the light emitting element 101 . For example, the width in the first direction d1 of the second portions 74 located at both ends in the first direction d1 among the plurality of second portions 74 is the width between the second portions 74 located at both ends among the plurality of second portions 74. 2 or more and 5 or less times the width in the first direction d1 of the second portion 74 positioned at . Further, for example, the width in the first direction d1 of the second portions 74 positioned at both ends in the first direction d1 among the plurality of second portions 74 can be set to 100 μm or more and 300 μm or less.

FIG. 6 shows a third variant of the invention. A third modification of the present invention is different from the embodiment shown in FIGS. At least different. As shown in FIG. 6, the widths of all of the plurality of second portions 74 in the first direction d1 may be made larger than in the embodiment. For example, the width in the first direction d1 of all of the plurality of second portions 74 can be approximately the same as the width of the first portion 73 in the second direction d2.

As shown in FIG. 7, the area of the inner connection surface 21b exposed to the first opening 51a is changed to the inner connection surface exposed to the second opening 51b according to the distance in the first direction d1 between the adjacent second portions 74. As shown in FIG. It can be made larger than the area of the surface 21b. For example, the area of the inner connection surface 21b exposed to the first opening 51a can be 1.1 times or more and 2 times or less the area of the inner connection surface 21b exposed to the second opening 51b. Current tends to concentrate around the first opening 51a between the adjacent second portions 74 compared to, for example, around the second opening 51b. By changing the area of the inner connection surface 21b exposed to the first opening 51a according to the distance in the first direction d1 between the adjacent second portions 74, it is possible to further reduce variations in the current density distribution.

The embodiments of the present invention have been described above with reference to specific examples. However, the invention is not limited to these specific examples. Based on the above-described embodiment of the present invention, all forms that can be implemented by those skilled in the art by appropriately designing and changing are also included in the scope of the present invention as long as they include the gist of the present invention. In addition, within the scope of the idea of the present invention, those skilled in the art can conceive of various modifications and modifications, and these modifications and modifications also belong to the scope of the present invention.

Reference Signs List 1 first side 2 second side 3 third side 4 fourth side 10 substrate 20 semiconductor structure 21 n-side semiconductor layer 21b connection surface (inner connection surface) , 21c connection surface (outer connection surface) 22 active layer 23 p-side semiconductor layer 30 wiring portion 41 p-side electrode 45 cover film 51 first insulating film 51a n-side Opening (first opening), 51b...n side opening (second opening), 51c...n side opening (third opening), 51d...n side opening (fourth opening), 51e... n-side opening (fifth opening) 52 second insulating film 61 n-side wiring electrode 62 p-side wiring electrode 71 n-side external electrode 72 p-side external electrode 73 first Parts 74...Second part 80...Wavelength conversion member 90...Resin member 100...Light emitting device 101...Light emitting element A1...First region A2...Second region

Claims (10)

A semiconductor structure including an n-side semiconductor layer, a p-side semiconductor layer, and an active layer positioned between the n-side semiconductor layer and the p-side semiconductor layer, and having a first side extending in a first direction in plan view. said semiconductor structure, wherein said n-side semiconductor layer has a plurality of connection surfaces exposed from said p-side semiconductor layer and said active layer;
an insulating film covering the semiconductor structure, comprising: a plurality of n-side openings located above the plurality of connection surfaces and exposing the plurality of connection surfaces; and a p-side opening located above the p-side semiconductor layer. the insulating film having an opening;
an n-side wiring electrode disposed on the insulating film and connected to the plurality of connection surfaces through the n-side opening;
a p-side wiring electrode disposed on the insulating film and electrically connected to the p-side semiconductor layer through the p-side opening;
an n-side external electrode arranged on the n-side wiring electrode;
a first portion of the p-side external electrode disposed on the p-side wiring electrode and located closer to the first side than the n-side external electrode in plan view and extending in the first direction in plan view; the p-side external electrode having a plurality of second portions extending from the first portion toward the first side in plan view and positioned apart from each other in the first direction;
with
The plurality of n-side openings include at least one first opening located between the adjacent second portions when viewed in plan and located closer to the n-side external electrode than the p-side external electrode when viewed in plan. and at least one third opening located between the first side of the semiconductor structure and the outer edge of the p-side semiconductor layer in plan view. In a plan view, the semiconductor structure includes a second side located on the opposite side of the first side and extending in the first direction, and a second side connecting the first side and the second side and perpendicular to the first direction. a third side extending in the second direction; and a fourth side located on the opposite side of the third side and connecting the first side and the second side and extending in the second direction,
In plan view, the plurality of n-side openings are arranged between the second side and the outer edge of the p-side semiconductor layer, between the third side and the outer edge of the p-side semiconductor layer, and between the fourth side and the fourth side. 2. The light emitting device according to claim 1, comprising at least one fourth opening located respectively between a side and an outer edge of said p-side semiconductor layer. The semiconductor structure has, in plan view, a first region closer to the first side than the second side and a second region closer to the second side than the first side,
The p-side external electrode is located at a position overlapping with the first region in plan view and at a position separated from the second region,
the n-side external electrode is located at a position overlapping with the second region in plan view and at a position separated from the first region;
Each distance in the second direction between the plurality of n-side openings arranged in the first region is a first distance, and the distance between the plurality of n-side openings arranged in the second region is the first distance. the distances in the two directions are each a second distance,
The light emitting device of claim 2, wherein the first distance and the second distance are different. The light emitting device according to any one of claims 1 to 3, wherein the width of the first portion in a second direction orthogonal to the first direction is greater than the width of the second portion in the first direction. The light emitting device according to any one of claims 1 to 4, wherein the first opening and the third opening are positioned on a straight line parallel to a second direction orthogonal to the first direction. The width in the first direction of the second portions located at both ends in the first direction among the plurality of second portions is the width of the second portions located at both ends in the first direction among the plurality of second portions. The light-emitting device according to any one of claims 1 to 5, wherein the width in the first direction of the second portion located between the portions is larger than that of the second portion. The first opening closest to the first portion among the first openings is located at a position closer to the first portion than the first side. light-emitting element. The light emitting device according to any one of claims 1 to 7, wherein a plurality of said first openings are arranged between said second portions adjacent in said first direction. The light emitting device according to any one of claims 1 to 8, wherein the area of the connection surface exposed through the first opening is larger than the area of the connection surface exposed through the second opening. A light emitting device according to any one of claims 1 to 9;
a resin member disposed between the n-side external electrode and the p-side external electrode and between the plurality of second portions and containing particles reflecting light from the active layer;
A light emitting device.

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