JP2023039136A - Exposure device, exposure method, and article manufacturing method - Google Patents

Abstract

To achieve both highly-accurate positioning and high productivity.SOLUTION: An exposure device includes a first measurement part for detecting an original plate mark and a first mark, a second measurement part for detecting a second mark, a storage part for storing a difference between the position of the first mark obtained by detecting the first mark by the first measurement part when a projection optical system is in a first state, and the position of the first mark obtained by detecting the first mark by the first measurement part when the projection optical system is in a second state different from the first state, and a control part for controlling positioning between the original plate and a shot region of a substrate, wherein the control part acquires a detection result obtained by performing detection of the original plate mark by the first measurement part, detection of the first mark by the first measurement part and detection of the second mark by the second measurement part in parallel, when the projection optical system is in the first state, and controls positioning between the original plate and the shot region of the substrate on the basis of the detection result and the difference when the projection optical system is in the second state.SELECTED DRAWING: Figure 4

Description

The present invention relates to an exposure apparatus, an exposure method, and an article manufacturing method.

2. Description of the Related Art In the manufacture of flat panels such as liquid crystal panels and organic EL panels and semiconductor devices, an exposure apparatus is used to transfer a pattern of an original plate such as a mask onto a substrate such as a glass plate or wafer coated with a resist. Such an exposure apparatus is required to align the pattern of the original with a shot area on the substrate with high accuracy, and to achieve high productivity.

Japanese Patent Laid-Open No. 2002-200002 discloses a content aimed at achieving both high-precision alignment and high productivity. Specifically, a measurement unit that detects the marks on the substrate via the projection optical system of the exposure apparatus and a measurement unit that detects the marks on the substrate without the projection optical system of the exposure apparatus are operated in parallel. A technique for mark detection is disclosed.

JP 2014-160780 A

However, if the state of the projection optical system is changed when using the method disclosed in Japanese Patent Application Laid-Open No. 2002-200010, there is a possibility that the marks cannot be detected using both of the above-described two measurement units. For example, when the energy distribution or wavelength of exposure light is changed, the positions of the optical members of the projection optical system may be changed. In such a case, at least one of the two measurement units may not be able to fit the mark on the substrate within the measurement field of view. That is, if the state of the projection optical system is changed, the two measurement units cannot detect the marks in parallel, and it may become difficult to achieve both high-precision alignment and high productivity. .

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an exposure apparatus that is advantageous in achieving both high-precision alignment and high productivity.

To achieve the above object, an exposure apparatus as one aspect of the present invention is an exposure apparatus for transferring a pattern of an original onto a shot area of a substrate via a projection optical system, wherein the original is formed on the original. a first measurement unit that detects a mark and detects a first mark formed on the substrate via the projection optical system; a second measuring unit that detects a second mark formed on a substrate; and the first mark obtained by detecting the first mark with the first measuring unit when the projection optical system is in the first state. and the position of the first mark obtained by detecting the first mark with the first measuring unit when the projection optical system is in a second state different from the first state. and a controller for controlling alignment between the original and the shot area of the substrate, wherein the controller controls the first measurement when the projection optical system is in the first state. detection of the original mark by the unit, detection of the first mark by the first measurement unit, and detection of the second mark by the second measurement unit in parallel. and, when the projection optical system is in the second state, alignment between the original and the shot area of the substrate is controlled based on the detection result and the difference.

According to the present invention, it is possible to provide an exposure apparatus that is advantageous in achieving both high-precision alignment and high productivity.

1 is a schematic diagram showing the configuration of an exposure apparatus; FIG. FIG. 4 is a diagram showing the relationship between the position of an alignment mark and the visual field ranges of two measurement units; It is a figure which shows the measurement result in 1st Embodiment. 4 is a flowchart showing alignment procedures in the first embodiment. It is a figure which shows the measurement result in 2nd Embodiment. 9 is a flowchart showing alignment procedures in the second embodiment.

Preferred embodiments of the present invention are described in detail below with reference to the accompanying drawings. In addition, in each figure, the same reference numerals are given to the same members, and redundant explanations are omitted.

<First Embodiment>
The configuration of the exposure apparatus according to this embodiment and the alignment method according to this embodiment will be described. The exposure apparatus in this embodiment is an apparatus used in a lithography process when manufacturing devices such as semiconductor devices and flat panel displays (FPDs). The exposure apparatus forms a latent image pattern in a shot area of the substrate by transferring a pattern of an original (mask) onto a substrate (glass plate) coated with a resist. In this embodiment, a step-and-scan type exposure apparatus will be described, but the present invention is not limited to this, and other exposure methods such as a step-and-repeat type may be used.

The configuration of an exposure apparatus 100 according to this embodiment will be described with reference to FIG. FIG. 1A is a schematic diagram showing the overall configuration of an exposure apparatus 100 according to this embodiment. In this embodiment, a coordinate system is defined with the surface on which the substrate 5a is placed as the XY plane and the direction perpendicular to the XY plane as the Z direction. The exposure apparatus 100 includes an illumination optical system 1, an alignment measurement unit 2 (first measurement unit), an original stage 3b, a projection optical system 4, a substrate stage 5b, a control unit 8, a storage unit 9, an off Axis measurement units 91 and 92 (second measurement units) may be included.

FIG. 1B is a diagram showing the configuration of the illumination optical system 1. As shown in FIG. The illumination optical system 1 includes a light source 11, an elliptical mirror 12, a first condenser lens 13, a fly-eye lens 14, an aperture switching mechanism 15, a plane mirror 16, a second condenser lens 17, and an aperture width adjustment mechanism 18. , an imaging optical system 19, and the like. The light source 11 is, for example, a mercury lamp or an integrated solid state light emitting device. The elliptical mirror 12 is a reflecting mirror for efficiently guiding the luminous flux from the light source 11 . The fly-eye lens 14 homogenizes the light emitted from the light source 11 .

A plurality of diaphragms (for example, two diaphragms) can be mounted on the diaphragm switching mechanism 15 . For example, by rotating the diaphragm switching mechanism 15, the mounted diaphragms 15a and 15b can be moved, and an arbitrary diaphragm can be arranged on the optical path through which the light flux from the light source 11 passes. The aperture mounted on the diaphragm switching mechanism 15 can be changed as appropriate. For example, the user can test various diaphragms when installing the exposure apparatus 100 and determine the diaphragm mounted on the diaphragm switching mechanism 15. good. The arrangement of the diaphragm switching mechanism 15 is controlled by the controller 8, and by changing the diaphragm arranged on the optical path, the light source distribution illuminating the substrate 5a can be changed. The diaphragms 15a and 15b are, for example, diaphragms having circular or ring-shaped apertures, and can be appropriately changed according to the exposure process.

The slit 18 defines the illumination range of the original 3a (that is, the cross-sectional shape of the slit light that illuminates the original 3a). The slit 18 is, for example, a field stop having a rectangular or arcuate opening elongated in the X direction and arranged on the Fourier transform plane of the fly-eye lens 14 . The imaging optical system 19 has a plurality of optical members (for example, reflecting mirrors) arranged so that the original 3a positioned on the object plane of the projection optical system 4 is illuminated with slit light defined by the slit 18 .

FIG. 1(c) is a diagram showing the configuration of the projection optical system 4. As shown in FIG. The projection optical system 4 includes a first parallel plate 41a, a second parallel plate 41b (correction member), a first plane mirror 42, a second plane mirror 45, a convex mirror 44 and a concave mirror 43. The image of the pattern of the original 3a illuminated by is projected onto the substrate 5a. The first parallel plate 41a and the second parallel plate 41b play a role of correcting (reducing) aberrations generated in the projection optical system 4 by adjusting their positions and angles. A controller 8 controls the positions and attitudes of the optical members (for example, the first parallel plate 41 a or the second parallel plate 41 b ) that make up the projection optical system 4 . The control of the positions and orientations of the optical members that make up the projection optical system 4 can be adjusted during installation of the exposure apparatus 100 and maintenance of the exposure apparatus 100 so as to reduce the aberration of the projection optical system 4 .

Returning to the description of FIG. The original 3a and the substrate 5a are held by an original stage 3b and a substrate stage 5b, respectively, and are arranged at optically substantially conjugate positions (object plane and image plane of the projection optical system 4) via the projection optical system 4. be. The projection optical system 4 is, for example, a mirror projection type projection optical system configured by a plurality of mirrors, has a predetermined projection magnification (for example, 1:1 or 1/2), and is formed on the original 3a. A pattern is projected onto the substrate 5a.

The original stage 3b and the substrate stage 5b are movable on the XY plane, and are synchronous with each other in a direction (eg, Y direction) orthogonal to the optical axis direction (Z direction) of the projection optical system 4. Scanning is performed at a speed ratio corresponding to the projection magnification of 4. As a result, the pattern formed on the original plate 3a can be transferred to the shot area on the substrate 5a. This operation is also called scanning exposure. By sequentially repeating scanning exposure for each of the plurality of shot areas on the substrate 5a while stepping the substrate stage 5b, the process of exposing the plurality of shot areas on one substrate 5a can be completed. When the pattern of the original 3a is transferred to each shot area on the substrate 5a, the shot area and the original 3a are aligned. Alignment measurement is performed using the alignment measurement unit 2 and off-axis measurement units 91 and 92 for alignment.

The alignment measurement unit 2 is arranged between the illumination optical system 1 and the original 3a. At least one alignment scope is included. The alignment measurement unit 2 simultaneously observes the alignment mark (first mark) formed on the substrate 5a and the alignment mark (original mark) formed on the original 3a through the projection optical system 4. FIG.

The off-axis measurement units 91 and 92 are arranged between the projection optical system 4 and the substrate 5a. The off-axis measurement units 91 and 92 include at least one off-axis scope. The off-axis measurement units 91 and 92 observe alignment marks (second marks) formed on the substrate 5a. The off-axis measurement units 91 and 92 use information (baseline) for calibrating the positions of the marks measured by the alignment measurement unit 2 and the off-axis measurement units 91 and 92 to determine the position of each mark on the substrate (substrate 5a) can be measured.

When the alignment measurement unit 2 and the off-axis measurement units 91 and 92 detect the marks, if the light having the same wavelength as the light used for exposing the substrate 5a is used, the substrate 5a may be exposed (the resist applied may be damaged). exposed to light). Therefore, the alignment measurement unit 2 and the off-axis measurement units 91 and 92 use light having a wavelength different from that of the light used when exposing the substrate 5a, that is, non-exposure light.

The control unit 8 acquires shape information of the shot area based on the positions of the marks measured by the alignment measurement unit 2 and the off-axis measurement units 91 and 92 . Then, the control unit 8 performs scanning exposure of the substrate 5a while controlling the positions and driving speeds of the original stage 3b and the substrate stage 5b and the projection magnification of the projection optical system 4 based on the acquired shape information. This operation is also called alignment correction. Alignment measurement and alignment correction are hereinafter simply referred to as alignment.

FIG. 2 is a diagram for explaining the alignment method in this embodiment. FIG. 2(a) is a diagram showing the positions of the alignment marks on the substrate 5a. FIG. 2(b) is a diagram showing the positions of the alignment marks on the original plate 3a. FIG. 2(c) is a diagram showing a detection visual field range in which the alignment measurement unit 2 and the off-axis measurement units 91 and 92 can detect marks on the substrate 5a.

As shown in FIG. 2A, the substrate 5a includes a plurality of shot areas 51, and around each shot area 51, for example, six marks 511-516 are formed. As shown in FIG. 2B, the original plate 3a includes regions 31 in which patterns to be transferred to shot regions 51 on the substrate 5a are formed. Six marks 311 to 316 are formed around the area 31 so as to correspond to the six marks 511 to 516 formed around each shot area 51, for example.

Also, the alignment measurement unit 2 can include, for example, two alignment scopes 2a and 2b. The off-axis measurement units 91, 92 may include, for example, two off-axis scopes 91a, 91b and 92a, 92b, respectively. Each alignment scope and each off-axis scope are arranged so as to detect, in parallel, a plurality of marks provided around one shot area 51 on the substrate. In this embodiment, the marks detected by the alignment measurement unit 2 and the marks detected by the off-axis measurement units 91 and 92 are different marks.

For example, the alignment scope 2a detects the mark 312 on the original and the mark 512 on the substrate via the projection optical system 4, and the alignment scope 2b detects the mark 315 on the original and the mark 515 on the substrate with the projection optical system. Detected via system 4. Here, the marks (marks 512 and 515) on the substrate detected by the alignment scopes 2a and 2b are called first marks.

On the other hand, the off-axis scopes 91a, 91b, 92a, and 92b detect marks on the substrate without going through the marks on the original and the projection optical system 4. FIG. For example, off-axis scope 91a sees mark 513 on the board, off-axis scope 91b sees mark 516 on the board, off-axis scope 92a sees mark 511 on the board, and off-axis scope 92b sees mark 514 on the board. Observe. Then, the off-axis measurement units 91 and 92 detect the positions on the substrate of the marks (marks 511, 513, 514 and 516) on the substrate observed by each off-axis scope. Here, the marks on the substrate (marks 511, 513, 514 and 516) observed by the off-axis scopes 91a, 91b, 92a and 92b are called second marks.

The control unit 8 controls the position of the first mark (position on the substrate) measured by the alignment measurement unit 2, the position of the second mark (position on the substrate) detected by the off-axis measurement units 91 and 92, and The shape information of the shot area 51 is acquired based on. Scanning exposure of the shot area 51 is performed while the controller 8 controls the positions and driving speeds of the original stage 3b and the substrate stage 5b and the projection magnification of the projection optical system 4 based on the acquired shape information. Here, the shape information of the shot area 51 includes, for example, a rotation component, a shift component, a magnification component, an orthogonality component, and the like in the shot area 51 . Also, the shift component, magnification component, and orthogonality component can each include an X-direction component and a Y-direction component.

Further, by measuring the marks 511, 513, 514, and 516 on the substrate 5a with both the alignment measuring section 2 and the off-axis measuring sections 91 and 92, the baseline can be measured. The measured baseline can be used for error determination in subsequent measurements and for calculation of correction amounts during exposure. The baseline may fluctuate over time due to the effects of heat generated by exposure. If the baseline fluctuates, the position measurement of the second marks detected by the off-axis measurement units 91 and 92 will include an error, and the positioning accuracy (alignment accuracy) will decrease. Therefore, the exposure apparatus 100 of this embodiment can reduce the error in the position of the second mark by periodically correcting the baseline.

As described above, the alignment measurement unit 2 and the off-axis measurement units 91 and 92 are used together to detect the marks 511 to 516 on the substrate 5a, so that the alignment measurement unit 2 alone detects the marks 511 to 516. Position measurement can be performed in a shorter time. In the following, such a measurement method is also referred to as hybrid measurement. Hybrid measurement includes detection of marks 512 and 515 (first mark) by the alignment measurement unit 2 (first measurement unit) and marks 511, 513, 514 and 516 by the off-axis measurement units 91 and 92 (second measurement unit). (Second mark) can be detected in parallel. Therefore, the time required for alignment measurement can be shortened, and the throughput can be improved without lowering the alignment accuracy.

Next, the relationship between the state of the projection optical system 4 and mark measurement by the alignment measurement unit 2 and the off-axis measurement units 91 and 92 will be described with reference to FIG. FIG. 3 is a diagram showing detection fields on the substrate of the alignment measurement unit 2 and off-axis measurement units 91 and 92 when the state of the projection optical system 4 is different.

FIG. 3A shows the detection fields of the alignment measurement unit 2 and the off-axis measurement units 91 and 92 when the projection optical system 4 is in a state (hereinafter referred to as a first state) in which hybrid measurement is possible, Marks on the original 3a and on the substrate 5a are shown. When the projection optical system 4 is in the first state, the alignment measurement unit 2 and the off-axis measurement units 91 and 92 respectively locate the first marks (marks 512 and 515) on the original 3a and the substrate 5a within their detection fields. It is in a state where it can be accommodated. As a result, the alignment measurement unit 2 can fit the marks 312 and 315 on the original plate 3a and the first mark on the substrate 5a in the respective detection fields 2av and 2bv of the alignment scopes 2a and 2b. That is, the alignment measurement unit 2 and the off-axis measurement units 91 and 92 can simultaneously detect the marks 511 to 516 .

At the same time that the alignment scopes 2a and 2b detect the first marks, the off-axis measurement units 91 and 92 place second marks (marks 511, 513, 514 and 516) in their detection visual fields 91av, 91bv, 92av and 92bv. each can be accommodated. When the projection optical system 4 is in the first state, the alignment measuring section 2 and the off-axis measuring sections 91 and 92 can be used together to detect the first and second marks.

On the other hand, hybrid measurement may become impossible due to a change in the state of the projection optical system 4 . The exposure apparatus 100 can be operated to change the aperture used for exposure according to the exposure process. For example, when the diaphragm used for exposure is changed from the diaphragm 15a to the diaphragm 15b, the positions and attitudes of the optical components of the projection optical system 4 that reduce the aberration of the projection optical system 4 change. Therefore, it is necessary to change the positions and attitudes of the optical components of the projection optical system 4 according to the type of diaphragm.

The optical components of the projection optical system 4 are, for example, the first parallel plate 41a and the second parallel plate 41b. change at least one of the position and posture of The optical components of the projection optical system 4 may be other than the first parallel plate 41a and the second parallel plate 41b. Other optical components in the projection optical system 4 may be used. The position and orientation of the optical components of the projection optical system 4 may be changed for reasons other than the change of the diaphragm, or the positions and orientations of the optical components of the projection optical system 4 may be changed for other reasons. In this embodiment, the state of the projection optical system 4 when the diaphragm used for exposure is the diaphragm 15a is defined as the first state, and the state of the projection optical system 4 when the diaphragm used for exposure is changed to the diaphragm 15b is described below. Now, this state is called a second state in which hybrid measurement is impossible. An exposure mode using the diaphragm 15a is called a first exposure mode, and an exposure mode using the diaphragm 15b is called a second exposure mode.

In this embodiment, the position of the optical member (for example, the first parallel plate 41a and the second parallel plate 41b) in the first state is called the first position. Also, the position of the optical member (for example, the first parallel plate 41a and the second parallel plate 41b) in the second state is called the second position. At least one of the positions and orientations of the plurality of optical members of the projection optical system 4 may be changed between the first state and the second state.

In this embodiment, the first state is when the second marks (marks 511 , 513 , 514 and 516 ) are positioned within the detection visual fields of the off-axis measurement units 91 and 92 , and the second marks are within the detection visual fields of the alignment measurement unit 2 . 1 marks (marks 512 and 515) are positioned. In the second state, when the second marks (marks 511 , 513 , 514 and 516 ) are positioned within the detection fields of the off-axis measurement units 91 and 92 , the first marks ( marks 512, 515) are not positioned.

FIG. 3B shows the detection fields of the alignment measurement unit 2 and the off-axis measurement units 91 and 92 and the detection fields on the original 3a and the substrate 5a when the projection optical system 4 is in a second state different from the first state. Mark and indicate. In the second state, the alignment scopes 2a and 2b measure the first marks (marks 512 and 515) on the substrate 5a outside the detection field.

This is because the state of the projection optical system 4 is changed, the optical path of the light emitted from the alignment measurement unit 2 is shifted, and the marks 312 and 315 on the original via the projection optical system 4 and the first mark (mark 512 , 515) are shifted. Since the off-axis measurement units 91 and 92 are not affected by changes in the state of the projection optical system 4, the marks on the substrate 5a can be contained within the detection visual fields 91av, 91bv, 92av and 92bv.

FIG. 3(c) is a diagram when the projection optical system 4 is in the second state, like FIG. 3(b). FIG. 3(c) shows a state in which the alignment measurement unit 2 drives the substrate stage 5b from the state shown in FIG. It is a figure which shows. Even if the substrate stage 5b is driven as shown in FIG. can no longer be accommodated. That is, when the projection optical system 4 is in the second state, the alignment measurement unit 2 and the off-axis measurement units 91 and 92 cannot simultaneously detect the marks 511 to 516, and hybrid measurement can be performed. However, it can be difficult to improve throughput.

Therefore, in the present embodiment, instead of performing hybrid measurement in the second state, the result of measurement in the second state is predicted. For example, the measurement results of the first marks (marks 512 and 515) obtained by hybrid measurement in the first state during installation or maintenance of the exposure apparatus are stored in the storage unit 9 . Also, the measurement results of the first marks (marks 512 and 515) obtained by the hybrid measurement in the second state during installation or maintenance of the exposure apparatus are stored in the storage unit 9. FIG. The storage unit stores the difference between the position of the first mark in the first state and the position of the first mark in the second state (this step is also called a storage step). Based on the difference and the measurement results of the first marks (marks 512 and 515) obtained by hybrid measurement in the first state during exposure, the position of the first mark in the second state during exposure is predicted. As a result, even in the second state, the first marks (marks 512 and 515) can be measured without degrading the alignment accuracy.

The difference between the position of the first mark in the first state and the position of the first mark in the second state is calculated, for example, based on the amount of movement of the substrate stage 5b. The position of the substrate stage 5b when detecting the first mark in the second state needs to be moved from the position of the substrate stage 5b when detecting the first mark in the first state to a position where the first mark can be detected. be. Therefore, the difference between the position of the first mark in the first state and the position of the first mark in the second state can be calculated based on the amount of movement of the substrate stage 5b.

Alignment and exposure processing in this embodiment will be described with reference to FIG. FIG. 4 is a flow chart showing the procedure of alignment measurement and alignment correction in this embodiment. Each step shown in FIG. 4 is executed by controlling each part of the exposure apparatus 100 by the controller 8 . Note that FIG. 4 illustrates an example in which at least one of the positions and orientations of the first parallel plate 41a and the second parallel plate 41b is changed as the optical member of the projection optical system 4, but the optical member is the first parallel plate. A member other than the 41a and the second parallel plate 41b may be used.

In step S401, the control unit 8 controls at least one of the positions and orientations of the first parallel plate 41a and the second parallel plate 41b so that the first parallel plate 41a and the second parallel plate 41b are positioned at the first position. do.

In step S402, the control unit 8 performs control so that the alignment measurement unit 2 and the off-axis measurement units 91 and 92 are used together to perform hybrid measurement for detecting the first and second marks on the substrate 5a (measurement step). . In this embodiment, the detection result of the positional information of the plurality of marks on the substrate 5a acquired by the hybrid measurement is used in step S404 later.

In step S403, the control unit 8 controls at least one of the positions and orientations of the first parallel plate 41a and the second parallel plate 41b so that the first parallel plate 41a and the second parallel plate 41b are positioned at the second position. (change process).

In step S404, based on the detection result obtained in step S402 and the difference stored in the storage unit 9, the first parallel plate 41a and the second parallel plate 41b are located at the second position. The controller 8 calculates the positions of the first mark and the second mark on the substrate 5a.

In step S405, the control unit 8 controls each unit of the exposure apparatus 100 to perform alignment correction (that is, scanning exposure) based on the correction amount of alignment correction calculated in step S404. Specifically, scanning exposure of the shot area 51 is performed while controlling the position and driving speed of the original stage 3b and the substrate stage 5b and the projection magnification of the projection optical system 4 by the controller 8 (control step).

In this embodiment, it is desirable to calculate in advance the amount of driving the first parallel plate 41a and the second parallel plate 41b from the first position to the second position when the exposure apparatus 100 is installed or maintained. . Moreover, it is desirable to calculate the deviation amount of the mark detection position in at least one of the alignment measurement unit 2 and the off-axis measurement units 91 and 92 from the driving amount. Further, it is not necessary to calculate the driving amounts of the first parallel plate 41a and the second parallel plate 41b.

Instead of switching the state of the projection optical system 4 and measuring the relative positions of the marks 512 and 515 on the substrate and the marks 312 and 315 on the original, each state of the projection optical system 4 is measured from the optical design values. You can predict the result. By using the difference in the prediction result, the difference in the position measurement result due to the difference in the state of the projection optical system 4 may be calculated.

In this embodiment, even in the state (second state) of the projection optical system 4 in which hybrid measurement is impossible, hybrid measurement can be performed in the state (first state) of the projection optical system 4 in which hybrid measurement is possible. , high productivity can be realized without lowering the accuracy of alignment correction.

<Second embodiment>
In this embodiment, an example in which the off-axis measurement units 91 and 92 are drivable will be described. Since the configuration of the exposure apparatus 100 is the same as that of the first embodiment, the description thereof is omitted. Also, items not mentioned in this embodiment follow the first embodiment.

The relationship between the state of the projection optical system 4 and mark measurement by the alignment measurement unit 2 and the off-axis measurement units 91 and 92 in this embodiment will be described with reference to FIG. FIG. 5A shows the alignment measuring unit 2, the off-axis measuring unit 91, and the first parallel plate 41a and the second parallel plate 41b at the second position and before the off-axis measuring units 91 and 92 are driven. 92, mark positions on the original 3a and the substrate 5a. The alignment measurement unit 2 drives the substrate stage 5b so that the marks 312 and 315 on the original plate 3a and the marks 512 and 515 on the substrate 5a can be included in the detection fields 2av and 2bv. In the state of FIG. 5A, the off-axis measurement units 91 and 92 cannot fit the marks on the substrate 5a within the detection visual fields 91av, 91bv, 92av, and 92bv.

Therefore, the off-axis measurement units 91 and 92 are driven so that the marks on the substrate 5a can be contained within the detection visual fields 91av, 91bv, 92av and 92bv. FIG. 5B shows the alignment measuring unit 2, the off-axis measuring units 91 and 92, the original plate 3a, and the substrate 5a after the concave mirror is at the second position and the off-axis measuring units 91 and 92 have been driven. Indicates mark position. As a result, the marks 511, 513, 514 and 516 on the substrate 5a can be measured by the off-axis measurement units 91 and 92. FIG.

By driving the off-axis measurement units 91 and 92 in this manner, the alignment measurement unit 2 can place the marks 312 and 315 on the original 3a and the marks 512 and 515 on the substrate 5a within the detection visual fields 2av and 2bv. . That is, hybrid measurement can be performed by the alignment measurement unit 2 and the off-axis measurement units 91 and 92 .

Alignment and exposure processing in this embodiment will be described with reference to FIG. FIG. 6 is a flow chart showing the procedure of alignment measurement and alignment correction in this embodiment. Each step shown in FIG. 6 is executed by controlling each part of the exposure apparatus 100 by the controller 8 . Note that FIG. 6 illustrates an example in which at least one of the position and orientation of the concave mirror 43 is changed as an optical member of the projection optical system 4, but the optical member may be a member other than the concave mirror 43.

In step S601, the control unit 8 controls at least one of the positions and orientations of the first parallel plate 41a and the second parallel plate 41b so that the first parallel plate 41a and the second parallel plate 41b are positioned at the second position. do.

In step S602, the control unit 8 controls to drive the off-axis measuring units 91 and 92 to the measurable position (driving step). This makes it possible to perform hybrid measurement even when the first parallel plate 41a and the second parallel plate 41b are positioned at the second position.

In step S603, the control unit 8 performs control to perform hybrid measurement for detecting the first and second marks on the substrate 5a using both the alignment measurement unit 2 and the off-axis measurement units 91 and 92 (measurement process). .

In step S604, the control unit 8 calculates a correction amount for alignment correction based on the measurement result of hybrid measurement in step S604.

In step S605, the control unit 8 controls each unit of the exposure apparatus 100 to perform alignment correction (that is, scanning exposure) based on the correction amount of the alignment correction calculated by the control unit 8 in step S604 (control process). . Specifically, scanning exposure of the shot area 51 is performed while controlling the positions and driving speeds of the original stage 3b and the substrate stage 5b and the projection magnification of the projection optical system 4 by the controller 8 .

In the present embodiment, driving the off-axis measurement units 91 and 92 to positions where hybrid measurement is possible enables hybrid measurement, and high productivity can be achieved without lowering the accuracy of alignment correction.

<Embodiment of method for manufacturing article>
A method for manufacturing an article according to an embodiment of the present invention is suitable for manufacturing a flat panel display (FPD), for example. The method for manufacturing an article according to the present embodiment includes a step of obtaining an exposed substrate by forming a latent image pattern on a photosensitive agent applied on a substrate by exposure using the above-described exposure device (exposure step); is developed to obtain a developed substrate (development step). In addition, such manufacturing methods include other well-known steps (oxidation, deposition, deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method of the present embodiment is advantageous in at least one of article performance, quality, productivity, and production cost compared to conventional methods.

Although the preferred embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to these embodiments, and various modifications and changes are possible within the scope of the gist.

2 First measuring unit 3a Original plate 4 Projection optical system 5b Substrate 8 Control unit 9 Storage unit 51 Shot area 91, 92 Second measuring unit 100 Exposure device 512, 515 Mark (first mark)
511, 513, 514, 516 marks (second marks)

Claims (16)

An exposure apparatus for transferring a pattern of an original onto a shot area of a substrate via a projection optical system,
a first measuring unit that detects an original mark formed on the original and detects a first mark formed on the substrate via the projection optical system;
a second measurement unit that detects a second mark formed on the substrate that is different from the first mark without the projection optical system;
A position of the first mark obtained by detecting the first mark with the first measuring unit when the projection optical system is in the first state, and a second state in which the projection optical system is different from the first state. a storage unit that stores a difference from the position of the first mark obtained by detecting the first mark with the first measurement unit when the
a control unit that controls alignment between the original and the shot area of the substrate;
has
The control unit
When the projection optical system is in the first state, the first measurement unit detects the original mark, the first measurement unit detects the first mark, and the second measurement unit detects the second mark. Acquire the detection results obtained by performing the detection of and in parallel,
An exposure apparatus, wherein when the projection optical system is in the second state, alignment between the original and the shot area of the substrate is controlled based on the detection result and the difference. the first state is a state in which the position of the optical member in the projection optical system is arranged at a first position;
2. An exposure apparatus according to claim 1, wherein said second state is a state in which said optical member is arranged at a second position different from said first position. 3. An exposure apparatus according to claim 2, wherein said controller drives said optical member from said first position to said second position based on a change in exposure mode. 4. An exposure apparatus according to claim 3, wherein the change of the exposure mode is a change of a field stop in an illumination optical system that illuminates the original with exposure light. when the exposure mode is the first exposure mode, the optical member is arranged at the first position;
5. An exposure apparatus according to claim 3, wherein said optical member is arranged at said second position when said exposure mode is a second exposure mode. 6. An exposure apparatus according to any one of claims 2 to 5, wherein the difference is calculated based on the amount of driving of the optical member from the first position to the second position. 7. An exposure apparatus according to claim 2, wherein said optical member includes a concave mirror. 7. An exposure apparatus according to any one of claims 2 to 6, wherein said optical member includes a correction member for changing aberrations generated in said projection optical system. 7. An exposure apparatus according to claim 2, wherein said optical member includes a convex mirror. The first state is a state in which the first mark is positioned within the detection visual field of the first measuring section when the second mark is positioned within the detection visual field of the second measuring section. An exposure apparatus according to any one of claims 1 to 9. The second state is a state in which the first mark is not positioned within the detection visual field of the first measurement section when the second mark is positioned within the detection visual field of the second measurement section. An exposure apparatus according to any one of claims 1 to 10. further comprising a substrate stage capable of holding and moving the substrate;
12. The exposure apparatus according to any one of claims 1 to 11, wherein the difference is calculated based on the amount of movement of the substrate stage. An exposure apparatus for transferring a pattern of an original onto a shot area of a substrate via a projection optical system,
a first measuring unit that detects an original mark formed on the original and detects a first mark formed on the substrate via the projection optical system;
a second measurement unit that detects a second mark formed on the substrate that is different from the first mark without the projection optical system;
a substrate stage capable of holding and moving the substrate;
a control unit that aligns the original with each shot area of the substrate;
has
The control unit
The first mark is positioned within the detection field of view of the first measurement unit and the second mark is positioned within the detection field of view of the second measurement unit according to a change in the state of the projection optical system. , driving the second measurement unit and the substrate stage,
obtained by concurrently performing the detection of the original mark by the first measurement unit, the detection of the first mark by the first measurement unit, and the detection of the second mark by the second measurement unit. An exposure apparatus that aligns the original with each shot area of the substrate based on a detection result. a first measuring unit that detects an original mark formed on the original and detects a first mark formed on the substrate via a projection optical system;
and a second measurement unit that detects a second mark formed on the substrate, which is different from the first mark, without going through the projection optical system. is transferred onto the shot area of the substrate,
A position of the first mark obtained by detecting the first mark with the first measuring unit when the projection optical system is in the first state, and a second state in which the projection optical system is different from the first state. a storage step of storing a difference from the position of the first mark obtained by detecting the first mark with the first measurement unit when the state is the state;
When the projection optical system is in the first state, the first measurement unit detects the original mark, the first measurement unit detects the first mark, and the second measurement unit detects the second mark. a measurement step of obtaining detection results obtained by performing mark detection in parallel;
a changing step of changing the state of the projection optical system from the first state to the second state;
a control step of controlling alignment between the original and a shot area of the substrate based on the detection result and the difference when the projection optical system is in the second state;
An exposure method comprising: a first measuring unit that detects an original mark formed on the original and detects a first mark formed on the substrate via a projection optical system;
a second measurement unit that detects a second mark formed on the substrate that is different from the first mark without the projection optical system;
An exposure method for transferring a pattern of the original onto a shot area of the substrate via the projection optical system in an exposure apparatus having a substrate stage capable of holding and moving the substrate, the exposure method comprising:
The first mark is positioned within the detection field of view of the first measurement unit and the second mark is positioned within the detection field of view of the second measurement unit according to a change in the state of the projection optical system. , a driving step of driving the second measuring unit and the substrate stage;
obtained by concurrently performing the detection of the original mark by the first measurement unit, the detection of the first mark by the first measurement unit, and the detection of the second mark by the second measurement unit. a control step of aligning the original and each shot area of the substrate based on the detection result;
An exposure method comprising: an exposure step of obtaining an exposed substrate by exposing a substrate using the exposure apparatus according to any one of claims 1 to 13;
developing the exposed substrate to obtain a developed substrate,
A method for producing an article, comprising producing an article from the developed substrate.

Images