JP2023032544A - Plating method - Google Patents

Abstract

To provide a plating method capable of using a non-conductive base material and easily peeling a seed layer and a plating layer.SOLUTION: A plating method comprises a seed layer forming step S2 and a first growing step S5. The seed layer forming step S2 forms a conducive diamond-like carbon film on the base material as a seed layer. The first growing step S5 forms a plating layer on the seed layer by electrolytic plating after the seed layer forming step S2.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to plating methods.

Conventionally, there have been proposed techniques for manufacturing a metal mask using a plating method (for example, Patent Documents 1 to 3). Specifically, a metal layer is formed in a predetermined pattern on the conductive layer by electroplating using a metal conductive layer as an electrode. For example, after patterning a resist on the conductive layer, electroplating is performed to pattern the metal layer on the conductive layer. After that, the metal layer is peeled off from the conductive layer to manufacture a metal mask made of the metal layer.

JP 2010-116579 A JP 2006-152396 A JP-A-2003-45657

However, in the techniques of Patent Documents 1 to 3, since the conductive layer (seed layer) contains metal, the seed layer and the metal layer (plating layer) have good compatibility and high adhesion. Alternatively, since the seed layer is made of metal, the flatness of its surface is not so high, and the adhesion between the seed layer and the plating layer increases due to the anchor effect or the improvement of the adhesion area. Therefore, a larger external force is required to separate the seed layer and the plating layer. If the external force becomes large, problems such as bending of the plating layer may occur at the time of peeling.

It has also been desired that not only a conductive base material but also a non-conductive base material can be used for electrolytic plating.

Therefore, an object of the present disclosure is to provide a plating method that makes it possible to use not only a conductive base material but also a non-conductive base material, while allowing the seed layer and the plating layer to be easily separated.

A first aspect of the plating method includes a seed layer forming step of forming a conductive diamond-like carbon film on a base material as a seed layer; and a first growth step of forming a plating layer.

A second aspect of the plating method is the plating method according to the first aspect, wherein in the seed layer forming step, the diamond-like carbon film is formed under film forming conditions such that the seed layer has a sheet resistance of 500 mΩ/sq or less. is formed on the base material.

A third aspect of the plating method is the plating method according to the first or second aspect, wherein in the seed layer forming step, a material gas containing a carbon element and a dopant that imparts conductivity to the diamond-like carbon film. The diamond-like carbon film is formed on the base material by chemical vapor deposition using a conductivity imparting gas containing elements.

A fourth aspect of the plating method is the plating method according to any one of the first to third aspects, wherein, prior to the seed layer forming step, the matrix is removed in a vacuum state in which the pressure inside the chamber is reduced. A dry cleaning step for dry cleaning the surface of the material is further provided.

A fifth aspect of the plating method is the plating method according to the fourth aspect, wherein the seed layer forming step is continuously performed in a vacuum state from the dry cleaning step.

A sixth aspect of the plating method is the plating method according to any one of the first to fifth aspects, wherein after the first growing step, the plating layer is separated from the seed layer in a first peeling step. further provide.

A seventh aspect of the plating method is the plating method according to the sixth aspect, wherein after the first peeling step, a second growth step of forming a plating layer on the seed layer; and a second peeling step of peeling the plating layer from the seed layer after the step.

According to the first aspect of the plating method, a seed layer that is a conductive diamond-like carbon film is formed on a base material, and a plating layer is formed on the seed layer by electroplating. Therefore, even if the base material is non-conductive, the plating layer can be formed by electroplating. Electroplating is preferable because it can form a plated layer with high throughput.

Moreover, the diamond-like carbon film has flatness at the atomic level. Therefore, the plating layer can be easily peeled off from the seed layer.

According to the second aspect of the plating method, the plating layer can be formed more efficiently in electrolytic plating.

According to the third aspect of the plating method, a conductive diamond-like carbon film can be formed with wide coverage.

According to the fourth aspect of the plating method, since the surface of the base material can be cleaned, a diamond-like carbon film can be formed on the surface of the base material with high adhesion.

According to the fifth aspect of the plating method, it is possible to suppress the adhesion of impurities to the base material and the formation of oxides after the dry cleaning process. Therefore, in the seed layer forming step, the seed layer can be formed on the base material with high adhesion.

According to the sixth aspect of the plating method, the plating layer can be used as a product (for example, a metal mask).

According to the seventh aspect of the plating method, the seed layer can be reused.

4 is a flow chart showing an example of a metal mask manufacturing method using the plating method according to the embodiment. It is a figure which shows roughly an example of the mode of each manufacturing stage. It is a figure which shows roughly an example of the mode of each manufacturing stage. It is a figure which shows an example of a vacuum processing apparatus roughly. It is a figure which shows roughly another example of a vacuum processing apparatus. 4 is a flow chart showing another example of a method for manufacturing a metal mask;

Embodiments will be described below with reference to the accompanying drawings. Note that the components described in this embodiment are merely examples, and the scope of the present disclosure is not intended to be limited to them. In the drawings, for ease of understanding, the dimensions or number of each part may be exaggerated or simplified as necessary.

Expressions indicating relative or absolute positional relationships (e.g., "in one direction", "along one direction", "parallel", "perpendicular", "center", "concentric", "coaxial", etc.) are used unless otherwise specified. Not only the positional relationship is strictly expressed, but also the relatively displaced state in terms of angle or distance within the range of tolerance or equivalent function. Expressions indicating equality (e.g., "same", "equal", "homogeneous", etc.), unless otherwise specified, not only express quantitatively strictly equality, but also tolerances or equivalent functions can be obtained It shall also represent the state in which there is a difference. Expressions indicating shapes (e.g., "square shape" or "cylindrical shape"), unless otherwise specified, not only represent the shape strictly geometrically, but also to the extent that the same effect can be obtained, such as Shapes having unevenness or chamfering are also represented. The terms "comprise", "comprise", "comprise", "include" or "have" an element are not exclusive expressions that exclude the presence of other elements. The phrase "at least one of A, B and C" includes only A, only B, only C, any two of A, B and C, and all of A, B and C.

FIG. 1 is a flow chart showing an example of a method for manufacturing a metal mask 1 using the plating method according to this embodiment. FIGS. 2(a) to 2(d) and FIGS. 3(a) to 3(c) are diagrams schematically showing an example of each manufacturing stage. By this manufacturing method, a metal mask 1 having a plurality of openings 1a is manufactured (see FIG. 3(c)). This metal mask 1 is used, for example, in manufacturing an organic EL (Electro-Luminescence) display. As a more specific example, the metal mask 1 is used for forming an organic light-emitting layer. That is, after the metal mask 1 is arranged on a predetermined substrate (not shown), an organic light-emitting material is vapor-deposited on the predetermined substrate through the openings 1a of the metal mask 1. Next, as shown in FIG. Thereby, an organic light-emitting layer is formed on the substrate.

An example of a method for manufacturing such a metal mask 1 will be described below with reference to FIGS. 1 to 3. FIG. In the example of FIG. 1, first, the surface of the base material 10 is dry cleaned (step S1: dry cleaning step). The base material 10 is made of a material such as stainless steel, synthetic resin, ceramics, or the like. The base material 10 may or may not have conductivity. The base material 10 has, for example, a plate-like shape.

This base material 10 is transferred to a predetermined vacuum processing apparatus 100 . The base material 10 is placed in the vacuum processing apparatus 100 such that its thickness direction is along the vertical direction and the main surface 10a of the base material 10 faces vertically upward. FIG. 4 is a diagram schematically showing an example of the vacuum processing apparatus 100. As shown in FIG. In the example of FIG. 4, the vacuum processing apparatus 100 includes a dry cleaning apparatus 110 and a film forming apparatus 120. In FIG. The base material 10 is carried into the dry cleaning device 110 by the carrier robot 200 .

The dry cleaning device 110 is a cleaning device that dry-cleans the surface of the base material 10 . For example, the dry cleaning apparatus 110 includes a first chamber, a first pressure reducing mechanism (for example, a vacuum pump) for reducing the pressure in the first chamber, a first plasma reactor provided in the first chamber, and plasma in the first chamber. and a first gas supply section for supplying gas for.

The first plasma reactor converts the gas in the first chamber into plasma, and causes active species such as ions and radicals generated by the plasma to act on the main surface 10 a of the base material 10 . The first plasma reactor may be, for example, a capacitively coupled plasma reactor or an inductively coupled plasma reactor. A capacitively coupled plasma reactor includes a pair of electrodes, and an inductively coupled plasma reactor includes an inductively coupled antenna.

The first gas supply unit includes, for example, a first air supply pipe having an air supply port that opens in the first chamber, and a first valve interposed in the first air supply pipe. By opening the first valve, plasma gas is supplied into the first chamber through the first air supply pipe.

The first decompression mechanism sucks the gas in the first chamber and reduces the pressure in the first chamber to, for example, 100 Pa or less. While the first gas supply unit supplies gas for plasma into the first chamber, the first plasma reactor turns the gas into plasma. Gases for the plasma include noble gases such as argon gas. At least one of the radicals and ions generated by the plasma act on the main surface 10a of the base material 10, so that the main surface 10a of the base material 10 can be cleaned. For example, ions can collide with the main surface 10a of the base material 10 to remove impurities on the main surface 10a.

The first gas supply unit may also supply an oxidizing gas (eg, oxygen gas) into the first chamber. Thereby, unnecessary organic substances (for example, residual oil) on the main surface 10a of the base material 10 can be oxidatively decomposed and removed. For example, when oxygen gas is supplied into the first chamber, highly active oxygen radicals are generated by the plasma, and the oxygen radicals act on the main surface 10a of the base material 10 to oxidize and remove organic substances. That is, the supply of the oxidizing gas can improve the cleaning performance for the base material 10 . After a predetermined period of time for sufficiently removing the organic matter from the base material 10 has passed, the first gas supply unit stops supplying the oxidizing gas.

On the other hand, an oxide film may be formed on the main surface 10a of the base material 10 by supplying the oxidizing gas. In this case, the first gas supply unit may supply the reducing gas (for example, hydrogen gas) into the first chamber after stopping the supply of the oxidizing gas. Thereby, the oxide film of the base material 10 can be reduced and removed. For example, when hydrogen gas is supplied into the first chamber, hydrogen radicals having high activity are generated by the plasma, and the hydrogen radicals reduce and remove the oxide film of the base material 10 . After a predetermined period of time for sufficiently removing the oxide film has elapsed, the first gas supply unit stops supplying the reducing gas and the plasma gas.

As described above, the dry cleaning process can remove impurities from the main surface 10a of the base material 10 and clean the main surface 10a.

Wet cleaning and drying may be performed on the surface of the base material 10 before the dry cleaning step. For example, when organic matter such as oil is attached to the base material 10, after performing wet cleaning including solvent (chemical) cleaning and water washing, the base material 10 is dried, and then the dry cleaning described above is performed. conduct. Thereby, the main surface 10a of the base material 10 can be cleaned more appropriately.

After the dry cleaning process, a conductive diamond-like carbon film (hereinafter referred to as a DLC film) is formed as a seed layer 20 on the main surface 10a of the base material 10 (step S2: seed layer forming process). A film forming apparatus 120 in FIG. 4 is an apparatus for forming the seed layer 20 on the base material 10 . In the example of FIG. 4, a transfer chamber 210 is provided between the dry cleaning device 110 and the film forming device 120 . The transfer chamber 210 is connected to the dry cleaning device 110 and the film forming device 120 . A gate is provided at the connecting portion between the transfer chamber 210 and the dry cleaning device 110 . By opening the gate, the first chamber of the dry cleaning apparatus 110 and the transfer chamber 210 are communicated with each other, and by closing the gate, the first chamber is isolated from the transfer chamber 210 . A gate is also provided at the connecting portion between the transfer chamber 210 and the film forming apparatus 120 .

A transfer robot 220 is provided in the transfer chamber 210 . A decompression mechanism (for example, a vacuum pump) for decompressing the inside of the transfer chamber 210 is also provided. The pressure inside the transfer chamber 210 is adjusted to, for example, 100 Pa or less by a decompression mechanism.

The base material 10 after dry cleaning is taken out from the first chamber of the dry cleaning apparatus 110 by the transfer robot 220 and transferred into the second chamber of the film forming apparatus 120 . That is, the base material 10 is transferred from the dry cleaning device 110 to the film forming device 120 via the space in the transfer chamber 210 having a high degree of vacuum. Therefore, the base material 10 undergoes the dry cleaning process and the seed layer forming process without passing through the atmospheric pressure space. In other words, the seed layer forming process is performed continuously from the dry cleaning process in a vacuum state. The term "vacuum state" as used herein refers to a state in which the base material 10 is positioned in a space of 100 Pa or less.

The film forming apparatus 120 forms the seed layer 20 on the main surface 10a of the base material 10 by, for example, physical vapor deposition or chemical vapor deposition (see FIG. 2B). As the physical vapor deposition method, for example, sputtering can be adopted. As the chemical vapor deposition method, for example, a plasma chemical vapor deposition method can be adopted. When the film forming apparatus 120 forms the seed layer 20 by the chemical vapor deposition method, the seed layer 20 can be formed on the main surface 10a of the base material 10 with a wide coverage unlike the highly straight sputtering.

A specific example of the film forming apparatus 120 that performs the film forming process by the chemical vapor deposition method will be described below. The film forming apparatus 120 includes, for example, a second chamber, a second pressure reducing mechanism (for example, a vacuum pump) for reducing the pressure in the second chamber, a second plasma reactor provided in the second chamber, and a and a second gas supply for supplying gas. The second plasma reactor may be, for example, a capacitively coupled plasma reactor or an inductively coupled plasma reactor. The second gas supply unit includes, for example, a second air supply pipe having an air supply opening opening in the second chamber, and a second valve interposed in the second air supply pipe.

The second decompression mechanism sucks the gas in the second chamber and reduces the pressure in the second chamber to, for example, 100 Pa or less. The second gas supply unit supplies the material gas and the conductivity imparting gas into the second chamber. The material gas is a gas containing a carbon element, such as a hydrocarbon-based gas (specifically, methane gas, acetylene gas, etc.). The conductivity imparting gas is a gas containing a dopant element that imparts conductivity to the DLC film, such as nitrogen gas.

A second plasma reactor turns these gases into plasma. As a result, a conductive DLC film containing the dopant element is gradually deposited on the main surface 10a of the base material 10. Next, as shown in FIG. When the film thickness of the conductive DLC film reaches a predetermined film thickness, the film forming apparatus 120 ends the film forming process. A seed layer 20 is formed on the main surface 10 a of the base material 10 by this film forming process.

For electroplating, which will be described later, the sheet resistance of the seed layer 20 is desirably 500 mΩ/sq or less, more desirably 200 mΩ/sq or less. In other words, the film forming apparatus 120 preferably forms the seed layer 20 under film forming conditions such that the sheet resistance is 500 mΩ/sq or less (more preferably 200 mΩ/sq or less). This sheet resistance can be adjusted by the amount of defects caused by dopant elements in the seed layer 20 . Specifically, the sheet resistance of the seed layer 20 can be reduced by increasing the flow rate of the conductivity imparting gas in the seed layer forming step. In short, the flow rate of the conductivity imparting gas should be set so that the sheet resistance is 500 mΩ/sq or less (more preferably 200 mΩ/sq or less).

The base material 10 with the seed layer 20 formed thereon is taken out from the film forming apparatus 120 by, for example, a transport robot (not shown).

A resist 30 is then patterned on the seed layer 20 . Specifically, the base material 10 is conveyed to a predetermined resist device. A resist device forms a resist 30 on the seed layer 20 . For example, the resist device forms the resist 30 by applying a resist liquid onto the seed layer 20 and then drying the resist liquid. Alternatively, a film-like resist 30 may be attached to the seed layer 20 .

Next, a photomask 31 is placed on the resist 30 (see FIG. 2C), and then the resist 30 is exposed (step S3: resist exposure process). After removing the photomask 31, the resist 30 is developed using a developer (step S4: resist development step). Thereby, a resist 30 having a predetermined pattern shape is formed on the seed layer 20 (see FIG. 2(d)).

The base material 10 on which the resist 30 has been patterned is removed from the resist device by, for example, a transport robot (not shown).

Next, a plating layer 40 is formed on the seed layer 20 (step S5: growth step). The plating layer 40 is metal such as copper or nickel.

First, the base material 10 with the seed layer 20 and the resist 30 formed thereon is transported to a predetermined plating apparatus. In the plating apparatus, this base material 10 is immersed in an electrolytic solution. The electrolytic solution is also called a plating solution. As the electrolytic solution, for example, an electrolytic solution such as sulfamic acid can be used. A voltage is applied between a predetermined electrode (for example, nickel) immersed in the electrolytic solution and the seed layer 20 . Thereby, a metal (for example, nickel) is deposited on the surface of the seed layer 20 to form a plating layer 40 (see FIG. 3A). When the thickness of the plating layer 40 reaches a predetermined thickness, the plating apparatus stops outputting the voltage. The film thickness of the plating layer 40 is, for example, equal to or less than the film thickness of the resist 30 .

The base material 10 on which the plating layer 40 is formed is removed from the plating apparatus by, for example, a transport robot (not shown).

Next, the resist 30 is removed (step S6: resist removing step). Specifically, the base material 10 on which the seed layer 20, the resist 30 and the plating layer 40 are formed is transported to a predetermined resist removing device. The resist remover removes the resist 30 using, for example, a resist remover such as sulfuric acid. Thereby, a plurality of openings 1a are formed in the plating layer 40 (see FIG. 3B). The base material 10 from which the resist 30 has been removed is taken out from the resist removing device by, for example, a transport robot (not shown).

Next, the plating layer 40 is peeled off from the seed layer 20 (step S7: peeling process). Specifically, the base material 10 on which the seed layer 20 and the plating layer 40 are formed is conveyed to a predetermined peeling device. The peeling device applies an external force to the plating layer 40 and the seed layer 20 to separate the plating layer 40 and the seed layer 20, for example. As a result, the plating layer 40 is separated from the seed layer 20 (see FIG. 3(c)). For example, the stripping device drives a wedge into the boundary between the plating layer 40 and the seed layer 20 to strip a portion of the plating layer 40 from the seed layer 20 while keeping a portion of the plating layer 40 away from the seed layer 20. The plating layer 40 can be peeled off from the seed layer 20 by applying an external force to . The plating layer 40 separated from the seed layer 20 in this way corresponds to the product (here, the metal mask 1).

The metal mask 1 can be manufactured by the manufacturing method described above. Moreover, in the above example, a conductive DLC film is used as the seed layer 20 . Since the seed layer 20 has conductivity, the plating layer 40 can be formed by electroplating as described above. In electroplating, the plating layer 40 is formed using electric power, so the plating layer 40 can be formed with high throughput and low cost.

In addition, due to the properties of the DLC film, the surface of the seed layer 20 can be formed extremely flat at the atomic level. That is, the plating layer 40 is formed on the flat surface of the seed layer 20 . Therefore, almost no anchoring effect occurs at the boundary between the seed layer 20 and the plating layer 40, and the adhesion is small. Also, the plating layer 40 is metal, while the seed layer 20 is a DLC film different from metal. Therefore, the adhesive strength in terms of material compatibility between the plating layer 40 and the seed layer 20 is not so high. Therefore, in the peeling process, the plating layer 40 can be peeled off from the seed layer 20 with a smaller external force, and bending of the plating layer 40 (that is, the metal mask 1) can be suppressed.

Also, the DLC film has high corrosion resistance against acid and alkali. Therefore, even when the base material 10 is immersed in the electrolytic solution, the seed layer 20 hardly disappears and stable film quality can be maintained. In other words, the surface of the seed layer 20 can be kept flat even in the immersed state. Therefore, the plating layer 40 can be formed on the flat surface of the seed layer 20 .

For comparison, a structure in which the seed layer 20 is made of metal will be described. Since most metals are corroded by acid, when the base material 10 is immersed in an acidic electrolytic solution, the seed layer 20 is dissolved by the acid, which can cause unevenness on the surface. In order to avoid such unevenness, it is necessary to adopt an electrolytic solution suitable for the type of metal of the seed layer 20 . In other words, it is necessary to use an electrolytic solution that does not corrode the seed layer 20 .

On the other hand, when the seed layer 20 is a DLC film, it has corrosion resistance to more kinds of electrolytic solutions, and therefore can be applied to more kinds of electrolytic solutions. That is, it is possible to improve the selectivity of the electrolytic solution in electrolytic plating.

In the above example, in the seed layer forming step, the DLC film is formed under the film forming conditions that the sheet resistance is 500 mΩ/sq or less, more preferably 200 mΩ/sq or less. Thereby, the seed layer 20 with low electric resistance can be formed. Therefore, in electroplating, the current flowing through the electrode and seed layer 20 can be improved. Therefore, the plating layer 40 can be formed with higher efficiency.

Further, in the above example, the DLC film is formed by the chemical vapor deposition method in the seed layer forming step. Therefore, the DLC film can be formed with wide coverage. Therefore, even if the principal surface 10a of the base material 10 is curved or has projections on the principal surface 10a, it is possible to form a uniform DLC film on the principal surface 10a of the base material 10. can.

In the case of using sputtering, for example, a carbon target is arranged in a chamber so as to face the main surface 10a of the base material 10, and plasma ions are bombarded against the target, and nitrogen gas or the like is used. A conductivity imparting gas may be supplied to the chamber. Thereby, a conductive DLC film can be formed on the main surface 10 a of the base material 10 .

Further, in the above example, the base material 10 is dry-cleaned before forming the DLC film. Therefore, impurities on the main surface 10a of the base material 10 can be removed in advance, and the adhesion between the base material 10 and the seed layer 20 can be improved.

By the way, when the base material 10 has conductivity, a voltage may be applied between the base material 10 and the electrode in electroplating. In this case, base material 10 and seed layer 20 function as electrodes. If impurities are interposed between the base material 10 and the seed layer 20, the electrical resistance of the electrode will be high at that portion, which can make the film thickness distribution of the plating layer 40 uneven during the growth process. On the other hand, in the above-described example, the seed layer 20 is formed after removing the impurities on the main surface 10a of the base material 10, so that the film thickness of the plating layer 40 can be made uniform in the growth process. can be done.

Further, in the above example, the base material 10 is continuously subjected to the dry cleaning process and the seed layer forming process in a high-vacuum space. That is, the base material 10 is dry-cleaned and film-formed without passing through an atmospheric pressure space. When passing through the atmospheric pressure space, impurities such as particles may adhere to the main surface 10a of the base material 10, or the main surface 10a of the base material 10 may be oxidized by oxygen gas. In the above example, the base material 10 is subjected to dry cleaning and film formation only through a high-vacuum space (for example, a pressure of 100 Pa or less), so that impurities and oxide films are formed on the main surface 10a. can be suppressed. Therefore, the seed layer 20 can be formed on the main surface 10a of the base material 10 with a higher adhesive strength, and the peeling of the seed layer 20 and the base material 10 in the peeling process can be suppressed.

In addition, in the above example, dry cleaning is used to clean the base material 10, so compared to cleaning the base material 10 only by wet cleaning, it is possible to reduce consumption of chemicals and water. . Therefore, environmental load can also be reduced.

<Vacuum processing equipment>
In addition, although the vacuum processing apparatus 100 includes the dry cleaning apparatus 110 and the film forming apparatus 120 in the example of FIG. 4, it may include a single processing apparatus having these functions. FIG. 5 is a diagram showing an example of such a vacuum processing apparatus 100. As shown in FIG. The vacuum processing apparatus 100 has a dry cleaning function and a film forming function. The vacuum processing apparatus 100 includes, for example, a chamber, a decompression mechanism (e.g., a vacuum pump) for decompressing the chamber, a plasma reactor provided in the chamber, and a gas supply section for supplying various gases into the chamber. including. The plasma reactor may be, for example, a capacitively coupled plasma reactor or an inductively coupled plasma reactor.

The gas supply unit supplies a dry cleaning gas and a film forming gas into the chamber. Gases for dry cleaning include, for example, noble gases, oxidizing gases and reducing gases. The film-forming gas includes, for example, a material gas and a conductivity imparting gas. The gas supply unit includes, for example, air supply pipes for various gases having air supply ports that open in the chamber, and valves interposed in each air supply pipe.

When the base material 10 is transported to such a vacuum processing apparatus 100, the decompression mechanism reduces the pressure in the chamber to, for example, 100 Pa or less, and then the vacuum processing apparatus 100 performs the dry cleaning process and the seed layer forming process. in order. Also in this vacuum processing apparatus 100, the base material 10 is not exposed to the atmospheric pressure space between the dry cleaning process and the seed layer forming process. Therefore, almost no impurities and oxide films are formed on the main surface 10a of the base material 10 after dry cleaning. Therefore, the seed layer 20 can be formed on the main surface 10a of the base material 10 with high adhesion.

<Reuse of seed layer>
By the way, in the present embodiment, since the seed layer 20 is made of the conductive DLC film as described above, the adhesion between the seed layer 20 and the plating layer 40 is low. Therefore, the plating layer 40 can be peeled cleanly from the seed layer 20 in the peeling process. Therefore, the seed layer 20 after this peeling process may be used for manufacturing another metal mask 1 .

FIG. 6 is a flow chart showing an example of a method for manufacturing such a metal mask 1. As shown in FIG. In the example of FIG. 6, the dry cleaning step (step S1), the seed layer forming step (step S2), the resist exposure step (step S3), the resist developing step (step S4), the growth step (step S5: in the first growth step equivalent), the resist removing step (step S6), and the stripping step (step S7: corresponding to the first stripping step) are performed in this order, and then the resist exposure step (step S3) is performed again. That is, another resist 30 is formed again on the seed layer 20 (see FIG. 3(c)) after removing the metal mask 1, and the resist 30 is exposed. Then, a pattern is formed in the resist 30 by the resist development step (step S4), and a new plating layer 40 is formed on the seed layer 20 by the growth step (step S5: corresponding to the second growth step). . Then, the resist 30 is removed by the resist removing step (step S6), and the plating layer 40 is removed from the seed layer 20 by the removing step (step S7: second removing step) to form another metal mask 1. is manufactured.

According to such a manufacturing method, a common DLC film can be used for manufacturing a plurality of metal masks 1 . Therefore, the manufacturing cost of metal mask 1 can be reduced.

Although the plating method has been described in detail as above, the above description is illustrative in all aspects, and the plating method is not limited thereto. It is understood that numerous variations not illustrated can be envisioned without departing from the scope of this disclosure. Each configuration described in each of the above embodiments and modifications can be appropriately combined or omitted as long as they do not contradict each other.

10 base material 20 seed layer 40 plating layer S1 dry cleaning process (step)
S2 seed layer forming step (step)
S5 First growth process, second growth process (step)
S7 First peeling process, second peeling process (step)

Claims (7)

A seed layer forming step of forming a conductive diamond-like carbon film on the base material as a seed layer;
A plating method comprising, after the seed layer forming step, a first growing step of forming a plated layer on the seed layer by electroplating. The plating method according to claim 1,
The plating method, wherein in the seed layer forming step, the diamond-like carbon film is formed on the base material under film forming conditions such that the seed layer has a sheet resistance of 500 mΩ/sq or less. The plating method according to claim 1 or claim 2,
In the seed layer forming step, the diamond-like carbon film is formed by chemical vapor deposition using a material gas containing a carbon element and a conductivity imparting gas containing a dopant element that imparts conductivity to the diamond-like carbon film. A plating method for forming on the base material. The plating method according to any one of claims 1 to 3,
The plating method further comprising, before the seed layer forming step, a dry cleaning step of dry cleaning the surface of the base material in a vacuum state in which the pressure inside the chamber is reduced. The plating method according to claim 4,
The plating method, wherein the seed layer forming step is continuously performed in a vacuum state from the dry cleaning step. The plating method according to any one of claims 1 to 5,
The plating method further comprising a first peeling step of peeling the plating layer from the seed layer after the first growing step. The plating method according to claim 6,
a second growth step of forming a plating layer on the seed layer after the first peeling step;
The plating method further comprising a second peeling step of peeling the plating layer from the seed layer after the second growing step.

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