TWI534926B - Semiconductor processing device and manufacturing method thereof - Google Patents

Description

Semiconductor processing device and manufacturing method

The present invention relates to a semiconductor processing apparatus and a manufacturing method therefor, and more particularly to a corrosion-resistant semiconductor processing apparatus and a manufacturing method thereof.

In a conventional chemical vapor deposition apparatus or plasma etching apparatus, it is often necessary to ionize a reaction gas to form a plasma, and then perform chemical vapor deposition or plasma etching using the plasma. When the reaction gas contains Cl and F, a plasma of Cl and F is formed in the reaction chamber of the chemical vapor deposition device or the plasma etching device, and the plasma of the Cl and F is strong. Corrosion ability. In the chemical vapor deposition apparatus or the plasma etching apparatus of the prior art, the material of the reaction chamber is mostly stainless steel, and the plasma of the Cl and F corrodes the inner wall of the reaction chamber of the stainless steel. And because the chemical vapor deposition device or the plasma etching device usually performs a deposition process or an etching process in a high-temperature, high-frequency environment, the high-temperature, high-frequency environment accelerates the plasma corrosion of the Cl and F. The stainless steel inner wall shortens the service life of the reaction chamber.

The Chinese Patent Publication No. CN101296553B discloses a plasma processing apparatus comprising: a reaction chamber; a showerhead electrode located at the top of the reaction chamber, and a reaction gas passing through the inlet hole of the showerhead electrode Flowing into a reaction chamber of the plasma processing apparatus; a liner located at a surface of the showerhead electrode facing the reaction chamber, the liner being detachable, and the liner having a corresponding aperture Through hole. The material of the backing plate is anodized aluminum, single crystal germanium, tantalum carbide, tantalum nitride or quartz. After the liner is corroded to a certain extent by corrosive reactive ions in the reaction chamber, the nozzle electrode can still be used normally by replacing the liner, so that the service life of the nozzle electrode can be significantly prolonged.

However, with the above-mentioned technology, frequent replacement of the lining plate increases the cost of use, and the lining plate can only protect the surface of the shower head electrode from the surface of the reaction chamber from the corrosion of the plasma of Cl and F, and other exposure to the plasma. The inner wall of the reaction chamber is still corroded and the service life of the reaction chamber is still shortened.

The problem to be solved by the present invention is to provide a semiconductor processing apparatus and a manufacturing method thereof, wherein a material of a processing chamber inner wall and a portion of the processing member exposed to the plasma has corrosion resistance such that the semiconductor processing apparatus has a service life. lengthen.

In order to solve the above problems, the present invention provides a semiconductor processing apparatus including a processing chamber for introducing a source gas, performing corresponding processing on a substrate placed in a processing chamber, and the processing chamber The chamber is further configured to contain a plasma, the processing chamber having a processing component, at least the material of the interior of the processing chamber and/or the portion of the processing component exposed to the plasma is a nickel alloy containing chromium, wherein the chromium-containing material In the nickel alloy, the chromium percentage ranges from 14.5% to 23%, and the nickel weight percentage ranges from 30% to 68%; the chromium-containing nickel alloy having a specific composition ratio is suitable for preventing the halogen-containing Corrosion of the plasma of the element.

Optionally, the chromium-containing nickel alloy layer is a Herst nickel alloy or a high-alloy nickel alloy.

Optionally, the material of the inner wall of the processing chamber and/or the main body of the processing component is stainless steel or aluminum, and the surface of the inner wall surface of the processing chamber and/or the surface of the processing component exposed to the plasma has a nickel alloy containing chromium. Floor.

Optionally, the chromium-containing nickel alloy layer has a thickness of 10 μm to 500 μm.

Optionally, the chromium-containing nickel alloy layer is a single-layer nickel alloy layer or a multi-layer stacked nickel alloy layer.

Optionally, the material of the inner wall of the processing chamber and/or the processing component is chrome-containing Nickel alloy.

Optionally, the semiconductor processing device is a plasma processing device.

Optionally, the semiconductor processing device is an MOCVD device, and the MOCVD device has a plasma generating device, and the plasma generating device generates plasma to clean a processing chamber of the MOCVD device.

Optionally, the processing component is a gas showerhead for introducing a source gas.

The technical solution of the present invention further provides a method for fabricating a semiconductor processing apparatus, comprising: providing a processing chamber and/or a processing component, and forming a surface on a surface of the processing chamber inner wall surface and/or a portion of the processing component exposed to the plasma A chrome nickel alloy layer.

Alternatively, the process of forming the chromium-containing nickel alloy layer includes electroplating, spraying, sputtering, or deposition processes.

Optionally, the chromium-containing nickel alloy layer is a single-layer nickel alloy layer or a multi-layer stacked nickel alloy layer.

Optionally, the chromium-containing nickel alloy is a Herst nickel alloy or a high-alloy nickel alloy.

The technical solution of the present invention further provides a method for fabricating a semiconductor processing apparatus, comprising: providing a processing chamber and/or a processing component, the inner wall of the processing chamber and/or the processing component being cast or pressed by using a nickel alloy containing chromium .

Optionally, the chromium-containing nickel alloy is a Herst nickel alloy or a high-alloy nickel alloy.

Compared with the prior art, the present invention has the following advantages: In the semiconductor processing apparatus according to an embodiment of the present invention, at least the material of the processing chamber inner wall and/or the processing member exposed to the plasma is chromium-containing. Nickel alloy, in the In the chromium-containing nickel alloy, the chromium has a weight percentage ranging from 14.5% to 23%, and the nickel has a weight percentage ranging from 30% to 68%. Since the chromium-containing nickel alloy can effectively prevent corrosion of a plasma containing a halogen element such as Cl, F, the service life of the inner wall, the susceptor and/or the gas shower head of the formed processing chamber becomes long. , can improve the service life of the semiconductor processing device.

The specific embodiments of the present invention will be further described by the following examples and the accompanying drawings.

110‧‧‧Processing chamber

111‧‧‧ inner wall

115‧‧‧Base

120‧‧‧ gas sprinkler

121‧‧‧RF matcher

122‧‧‧RF source

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the structure of a metal organic compound chemical vapor deposition apparatus according to an embodiment of the present invention.

Since the conventional plasma processing apparatus requires frequent replacement of the lining plate, the use cost of the plasma processing apparatus is increased. The inventors have studied and proposed a semiconductor processing apparatus and a manufacturing method thereof, at least the semiconductor processing apparatus. The material of the inner wall of the processing chamber and/or the portion of the processing member exposed to the plasma is a nickel alloy containing chromium, and in the nickel alloy containing chromium, the weight percentage of the chromium ranges from 14.5% to 23%. The weight percentage of nickel ranges from 30% to 63%. Since the weight percentage of the chromium ranges from 14.5% to 23%, the nickel alloy having a weight percentage of 30% to 63% of nickel can effectively prevent the corrosion of the plasma of halogen elements such as Cl and F. The nickel alloy containing chromium as a material for treating the inner wall of the chamber and/or the portion of the processing member exposed to the plasma can greatly reduce the corrosion of the plasma of the halogen element on the inner wall of the chamber and/or the treated part, thereby improving the corrosion. The useful life of the semiconductor processing apparatus.

The above described objects, features and advantages of the present invention will become more apparent from the aspects of the invention.

Specific details are set forth in the following description in order to provide a thorough understanding of the invention. However, the invention can be implemented in a variety of other ways than those described herein, and those skilled in the art can A similar promotion can be made without violating the connotation of the present invention. Therefore, the invention is not limited by the specific embodiments disclosed herein.

A semiconductor processing apparatus according to an embodiment of the present invention includes a processing chamber into which an active gas is introduced, and the substrate to be processed is etched and deposited by the source gas. A semiconductor processing apparatus according to an embodiment of the present invention further includes a plasma generating device that ionizes the source gas into a plasma by using the plasma generating device, and uses the plasma to treat a chamber wall of the semiconductor processing device Wash it.

An embodiment of the present invention first provides a metal organic compound chemical vapor deposition (MOCVD) apparatus. Referring to FIG. 1 , a schematic structural diagram of an MOCVD apparatus according to an embodiment of the present invention includes: a processing chamber 110, The processing chamber 110 includes an inner wall 111; one or more susceptors 115 located inside the processing chamber 110, the susceptor 115 for carrying a substrate to be processed; and a gas shower head located at the top of the reaction chamber 120, the gas shower head 120 is used to send a reaction gas or a cleaning gas to the reaction chamber 110, and the gas shower head 120 serves as an electrode of the capacitive coupling plasma generating device, and the radio frequency supply source 122 is matched by radio frequency. The device 121 is connected to the gas shower head 120. In the present embodiment, the processing component of the MOCVD apparatus includes a susceptor 115 and a gas showerhead 120.

In this embodiment, the plasma generating device is a capacitively coupled plasma generating device, and the RF supply source 122 is connected to the gas shower head 120 through the RF matching device 121, so that an RF electric field is generated in the processing chamber, which will be cleaned. The gas is ionized into a plasma. In other embodiments, the plasma generating device is an inductively coupled plasma generating device, and the RF supply source is connected to the inductor coil located on the sidewall of the reaction chamber through a RF matching device, so that an RF electric field is generated in the processing chamber, which will be cleaned. The gas is ionized into a plasma.

The process for forming a semiconductor thin film by using the MOCVD apparatus is carried out by thermally decomposing a substrate on a substrate to be processed by using an organic compound of a group III or II element and a hydride of a group V or a group VI element as a source gas for crystal growth. Vapor phase epitaxy, forming various III-V families, II-VI compound semiconductor film. Since the III-V group, II-VI compound semiconductor film is formed on the surface of the substrate to be processed, it is also formed on the inner wall 111 of the processing chamber, the susceptor 115, and the surface of the gas shower head 120. Therefore, after a period of MOCVD thin film deposition process, the deposition process must be stopped, and the residual III-V and II-VI compound semiconductor thin films in the reaction chamber are removed by a plasma cleaning process. In order to effectively remove residual III-V and II-VI compound semiconductor thin films in the reaction chamber, the plasma of the cleaning gas often contains a plasma of Cl and F, but in the prior art, the Cl is contained. The plasma of F can not only effectively remove the residual III-V and II-VI compound semiconductor thin films in the reaction chamber, but also corrode the stainless steel inner wall of the MOCVD equipment, the stainless steel gas shower head and the stainless steel base. The life of the MOCVD equipment is shortened.

Therefore, in an embodiment of the present invention, the surface of the processing chamber inner wall 111, the susceptor 115, and the gas shower head 120 of the MOCVD apparatus exposed to the plasma has a nickel alloy layer containing chromium, and the In the chromium nickel alloy, the chromium has a weight percentage ranging from 14.5% to 23%, and the nickel has a weight percentage ranging from 30% to 68%. Specifically, in the embodiment, the chromium-containing nickel alloy is a Hastelloy nickel alloy or an Inconel nickel alloy, and the Hastelloy nickel alloy mainly includes chromium and nickel. Molybdenum, the specific models of the Hessian nickel alloy are Hastelloy B-2, Hastelloy B-3, Hastelloy C-22, Hastelloy C-276, Hastelloy G-3, etc., which are mainly in the Inconel nickel alloy. Including chromium, nickel, the specific models of the high-alloy nickel alloy are Inconel 625, Inconel 600, Inconel 601 and the like.

The inventors conducted experiments on the loss of weight of stainless steel 316L and Hastelloy C-22, Hastelloy C-276, and Inconel 625 alloy under plasma treatment using conventional techniques for forming the inner wall of the processing chamber. Wherein, the weight percentage of chromium in the Hastelloy C-22 alloy ranges from 20% to 22.5%, the weight percentage of nickel ranges from 50% to 63%, and the weight percentage of molybdenum ranges from 12.5% to 14.5%. The weight percentage of chromium in the Hastelloy C-276 alloy ranges from 14.5% to 16.5%, the weight percentage of nickel ranges from 51% to 63%, and the weight percentage of molybdenum ranges from 15%~17%. The weight percentage of chromium in the Inconel 625 alloy ranges from 20% to 23%, the weight percentage of nickel ranges from 58% to 68%, and the weight percentage of molybdenum ranges from 8% to 10%.

The inventors placed the same area of stainless steel 316L, Hastelloy C-22 alloy, Hastelloy C-276 alloy, Inconel 625 alloy on the surface of the gas shower head 120, the stainless steel 316L, Hastelloy C-22 alloy, Hastelloy C-276 alloy The surface of the Inconel 625 alloy is polished, and a cleaning gas of HCl/Ar is introduced into the processing chamber, and the cleaning gas of the HCl/Ar is plasma-treated by a radio frequency supply source having a frequency of 13.56 MHz and a power of 1500 W. Stainless steel 316L and Hastelloy C-22 alloy, Hastelloy C-276 alloy, Inconel 625 alloy were exposed to the plasma environment for 3 hours, and by measuring the weight loss of various materials, it was judged that the plasma containing Cl caused various materials. The degree of corrosion.

It was found through experiments that the original white stainless steel 316L was exposed to the environment of the plasma for 3 hours and the surface became grayish black. The weight of stainless steel 316L was reduced by 0.01 g, while the original white bright Hastelloy C-22 alloy, Hastelloy C-276 The alloy, Inconel 625 alloy was exposed to the environment of the plasma for 3 hours, and only a part of the surface was stained, most of the area was still shiny silvery white, and the weight of the Hastelloy C-276 alloy was reduced by 0.004 g. The weight of the Hastelloy C-22 alloy was reduced by 0.006 grams, the weight of the Inconel 625 alloy was reduced by 0.003 grams, and the Hastelloy nickel alloy or Inconel nickel alloy was coated with Cl. The corrosion resistance of the plasma is significantly stronger than that of the stainless steel 316L in the prior art. The use of the Hastelloy nickel alloy or the Inconel nickel alloy can effectively prevent the processing chamber of the semiconductor processing device. The plasma containing a halogen element such as Cl or F corrodes the inner wall of the processing chamber and the treated part.

In an embodiment of the present invention, the inner wall 111 of the processing chamber of the MOCVD apparatus, the susceptor 115, and the surface of the gas showerhead 120 exposed to the plasma have a nickel alloy layer containing chromium, and the processing chamber The main body 111 of the chamber, the base 115 and the main body of the gas shower head 120 are made of stainless steel, aluminum or other suitable material, and the thickness of the chromium-containing nickel alloy layer is 10 μ. m~500 μm, and the chromium-containing nickel alloy layer may be a single-layer nickel alloy layer or a multi-layer stacked nickel alloy layer. Since the inner wall 111 of the processing chamber, the susceptor 115 and the surface of the gas shower head 120 exposed to the plasma have a nickel alloy layer containing chromium, the inner wall 111 of the processing chamber, the susceptor 115 and The gas shower head 120 is not easily corroded by the plasma containing halogen elements such as Cl, F, and the main body 111 of the processing chamber, the base 115 and the gas shower head 120 are made of stainless steel or aluminum. Or other suitable materials can save production costs.

In other embodiments, the chromium-containing nickel alloy layer is only on the surface of the gas showerhead of the MOCVD apparatus. Since the gas shower head of the MOCVD apparatus is located above the substrate to be processed, the residual III-V, II-VI compound semiconductor film on the surface of the gas shower head is easily peeled off and falls on the surface of the substrate to be processed, so that The film formed on the surface of the processing substrate generates defects, and therefore, in other embodiments, during the cleaning process of the residual III-V group, II-VI compound semiconductor film in the reaction chamber by the plasma cleaning process, the electricity The slurry generating device generates a bias voltage such that the plasma of the cleaning gas containing halogen elements such as Cl, F is accelerated and bombarded onto the surface of the gas shower head, although the residual III-V group, II of the gas shower head surface The -VI compound semiconductor film is easier to remove, but the gas shower head is also susceptible to corrosion by the plasma of the cleaning gas containing Cl, F. Since the chromium-containing nickel alloy layer is located on the surface of the gas shower head of the MOCVD apparatus, and the chromium-containing nickel alloy has high mechanical strength, the gas shower head is not easily corroded, prolonging the life of the MOCVD apparatus.

In other embodiments, the material of the inner wall of the processing chamber of the MOCVD apparatus, the susceptor and/or the gas showerhead is a chromium-containing nickel alloy, and in the chromium-containing nickel alloy, the chromium The weight percentage ranges from 14.5% to 23%, and the nickel weight percentage ranges from 30% to 68%. Specifically, the chromium-containing nickel alloy is a Hastelloy nickel alloy or an Inconel nickel alloy. Since the chromium-containing nickel alloy can effectively prevent corrosion of a plasma containing a halogen element such as Cl, F, the inner wall of the processing chamber formed by the chromium-containing nickel alloy, the susceptor, and/or the gas spray The shower head can effectively prevent the corrosion of plasma containing halogen elements such as Cl and F. The eclipse extends the life of the MOCVD equipment.

In other embodiments, the semiconductor processing device is a plasma processing device, specifically a plasma enhanced chemical vapor deposition (PECVD) device, a high density plasma chemical vapor deposition (HDPCVD) device, or a plasma dry etching device. The plasma processing apparatus includes a processing chamber into which an active gas is introduced, and the plasma processing apparatus further has a plasma generating device that ionizes the source gas into a plasma by the plasma generating device The substrate to be processed is etched and deposited by the plasma. In the prior art, the inner wall of the processing chamber of the plasma processing apparatus, the susceptor for carrying the substrate to be processed, and the gas shower head for introducing the source gas are exposed to the plasma, when the electricity When the slurry contains a halogen element such as Cl or F, the inner wall of the processing chamber, the susceptor and the surface of the gas shower head of the plasma processing apparatus may be corroded, wherein the susceptor and the gas shower head are processing parts. . Therefore, the inner surface of the processing chamber of the plasma processing apparatus of the present embodiment and the surface of the portion where the processing member is exposed to the plasma have a nickel alloy layer containing chromium or the inner wall of the processing chamber, and the material of the processing member is the content A chromium nickel alloy in which the chromium has a weight percentage ranging from 14.5% to 23%, and the nickel has a weight percentage ranging from 30% to 68%. Specifically, the chromium-containing nickel alloy is a Hastelloy nickel alloy or an Inconel nickel alloy. Since the chromium-containing nickel alloy can effectively prevent corrosion of a plasma containing a halogen element such as Cl, F, the inner wall of the processing chamber formed by the chromium-containing nickel alloy, the susceptor, and/or the gas spray The shower head can effectively prevent the corrosion of plasma containing halogen elements such as Cl and F, and prolong the life of the plasma processing apparatus.

When the material of the inner wall of the processing chamber of the semiconductor processing device and/or the body of the processing member is stainless steel, aluminum, and other suitable materials, the surface of the inner wall of the processing chamber and/or the surface of the processing member exposed to the plasma is When it is desired to form a nickel alloy layer containing chromium, an embodiment of the present invention also provides a method of fabricating a semiconductor processing apparatus comprising: providing a processing chamber and/or processing component, processing a chamber interior wall and/or processing The material of the component is stainless steel, aluminum and other suitable materials, and the processing chamber is used to open the source gas and is placed in the processing chamber. The substrate is subjected to a corresponding treatment, the processing chamber is further configured to accommodate the plasma and the processing component; a nickel alloy layer containing chromium is formed on a surface of the inner wall surface of the processing chamber and/or a portion of the processing component exposed to the plasma .

The process of forming a chromium-containing nickel alloy layer on the surface of the inner wall surface of the processing chamber and/or the portion where the processing member is exposed to the plasma includes electroplating, spraying, sputtering or deposition processes.

In an embodiment of the present invention, the process of forming the chromium-containing nickel alloy layer is an electroplating process, wherein the chromium-containing nickel alloy is used as an anode, and the chromium-containing nickel alloy is specifically Hastelloy nickel. An alloy or an Inconel nickel alloy, the inner wall of the processing chamber and/or the processing member being a cathode, the anode and the cathode being immersed in a bath of a sulfate-chloride containing a stabilizer, wherein the sulfate Containing a metal element such as chromium or nickel, by controlling the amount of current applied between the anode and the cathode, the temperature and pH of the plating solution, forming a surface on the inner wall surface of the processing chamber and/or the portion of the processing member exposed to the plasma A nickel alloy layer containing chromium.

The chromium-containing nickel alloy layer has a thickness of 10 μm to 500 μm, and the chromium-containing nickel alloy layer may be a single layer of a chromium-containing nickel alloy layer or a multilayer stacked chromium-containing nickel alloy layer. When a multi-layered chromium-containing nickel alloy layer is formed on the inner wall surface of the processing chamber and/or the surface of the processing member by a plurality of electroplating processes, the material of each of the multi-layer stacked chromium-containing nickel alloy layers may be the same, Differently, by adjusting the materials of the nickel alloy layers of different layers, the corrosion resistance of the inner wall surface of the processing chamber and/or the surface of the processing member can be improved, and the surface of the nickel alloy layer containing the chromium and the inner wall of the processing chamber can be improved. Handling the adhesion between the surfaces of the parts.

After forming a nickel alloy layer containing chromium on the surface of the inner wall surface of the processing chamber and/or the portion where the processing member is exposed to the plasma, the inner wall surface of the processing chamber and the processing member are welded to other components of the semiconductor processing apparatus. Or assembled together to form a semiconductor processing device.

When the material of the inner wall of the processing chamber of the semiconductor processing apparatus and/or the body of the processing member is a nickel alloy containing chromium, an embodiment of the present invention correspondingly provides a semiconducting The method of manufacturing a body treatment device includes: providing a processing chamber and/or a processing component, wherein the processing chamber is configured to pass a source gas, and correspondingly process a substrate placed in the processing chamber, wherein the processing chamber is further used For containing the plasma and the processing component, the interior walls and/or processing components of the processing chamber are cast or press molded from a nickel alloy containing chromium.

In an embodiment of the invention, the inner wall of the processing chamber and the processing component are formed by a press forming process, which comprises: cutting a nickel alloy containing chromium by using an underwater numerical control plasma cutting process to form a chromium containing a certain shape. The nickel alloy sheet can not only obtain a smooth cutting surface, but also prevent the thermal cutting from contaminating the material, affecting the corrosion resistance of the material, and the heat affected zone of the slit is small, and the cost of removing the heat affected zone of the slit is less; The sheet is pressed into a specific shape on a rolling machine, and subjected to a solid solution heat treatment and pickling to prevent metal and oil from contaminating the material, and is assembled or welded to form a chamber inner wall and a processing member.

After forming the inner wall of the processing chamber and the processing member using the nickel alloy containing chromium, the inner wall surface of the processing chamber and the processing member are welded or assembled together with other components of the semiconductor processing apparatus to form a semiconductor processing apparatus. In this embodiment, the chromium-containing nickel alloy is a Hastelloy nickel alloy or an Inconel nickel alloy. Since the inner wall of the processing chamber and the processing member of the embodiment of the present invention are formed of a single piece of chromium-containing nickel alloy, there is no problem of peeling of the chromium-containing nickel alloy layer on the inner wall of the processing chamber and the surface of the processing member. Long service life.

In summary, a semiconductor processing apparatus according to an embodiment of the present invention includes a processing chamber for introducing a source gas, correspondingly processing a substrate placed in a processing chamber, and the processing chamber is further used The processing chamber has a processing component, and at least the material of the processing chamber inner wall and/or the portion of the processing component exposed to the plasma is a chromium-containing nickel alloy in the chromium-containing nickel alloy. The weight percentage of the chromium ranges from 14.5% to 23%, and the weight percentage of the nickel ranges from 30% to 68%. The inner wall of the processing chamber formed by the chromium-containing nickel alloy, the susceptor and/or the gas shower head can effectively prevent halogen elements such as Cl and F. The corrosion of the plasma can increase the service life of the semiconductor processing device.

The above description is only for the preferred embodiment of the present invention, and those skilled in the art can make other improvements according to the above description, but these changes still belong to the inventive spirit of the present invention and the patents defined below. In the scope.

110‧‧‧Processing chamber

111‧‧‧ inner wall

115‧‧‧Base

120‧‧‧ gas sprinkler

121‧‧‧RF matcher

122‧‧‧RF source

Claims (15)

A semiconductor processing apparatus includes a processing chamber for introducing a source gas, correspondingly processing a substrate placed in the processing chamber, and the processing chamber is further configured to receive a plasma, the processing The chamber has processing means, wherein at least the material of the inner wall of the processing chamber and/or the portion of the processing member exposed to the plasma is a nickel alloy containing chromium, including Hastelloy nickel alloy or Inconel nickel Alloy, the model used in the Herst nickel alloy is selected from Hastelloy B-2, Hastelloy B-3, Hastelloy C-22, Hastelloy C-276 or Hastelloy G-3, the model used in the Inco high nickel alloy It is selected from Inconel 625, Inconel 600 or Inconel 601, and in the chromium-containing nickel alloy, the chromium has a weight percentage ranging from 14.5% to 23%, and the nickel has a weight percentage ranging from 30% to 68%; The proportion of the chromium-containing nickel alloy is suitable for preventing corrosion of a plasma containing a halogen element. The semiconductor processing apparatus according to claim 1, wherein the chromium-containing nickel alloy layer is a Herst nickel alloy or a high-alloy nickel alloy. The semiconductor processing device of claim 1, wherein the inner wall of the processing chamber and/or the body of the processing member is made of stainless steel or aluminum, and the inner wall surface of the processing chamber and/or the portion of the processing member exposed to the plasma The surface has a nickel alloy layer containing chromium. The semiconductor processing apparatus according to claim 3, wherein the chromium-containing nickel alloy layer has a thickness of from 10 μm to 500 μm. The semiconductor processing apparatus according to claim 3, wherein the chromium-containing nickel alloy layer is a single-layer nickel alloy layer or a multi-layer stacked nickel alloy layer. The semiconductor processing apparatus according to claim 1, wherein the material of the inner wall of the processing chamber and/or the processing member is a nickel alloy containing chromium. The semiconductor processing apparatus of claim 1, wherein the semiconductor processing apparatus is a plasma processing apparatus. The semiconductor processing apparatus according to claim 1, wherein the semiconductor processing apparatus is an MOCVD apparatus having a plasma generating apparatus, and the plasma generating apparatus generates a plasma to clean a processing chamber of the MOCVD apparatus. The semiconductor processing apparatus of claim 1, wherein the processing component is a gas showerhead for introducing a source gas. A method of fabricating a semiconductor processing apparatus according to claim 3, comprising: providing the processing chamber and/or the processing component, a surface of the interior wall of the processing chamber and/or a surface of the processing component exposed to the plasma A nickel alloy layer containing chromium is formed. The method of fabricating a semiconductor processing apparatus according to claim 10, wherein the process of forming the chromium-containing nickel alloy layer is a plating, spraying, sputtering or deposition process. The method of fabricating a semiconductor processing apparatus according to claim 10, wherein the chromium-containing nickel alloy layer is a single-layer nickel alloy layer or a multi-layer stacked nickel alloy layer. The method of fabricating a semiconductor processing apparatus according to claim 10, wherein the chromium-containing nickel alloy is a Herst nickel alloy or a high-alloy nickel alloy. A method of fabricating a semiconductor processing apparatus according to claim 6, comprising: providing the processing chamber and/or the processing component, the processing chamber inner wall and/or the processing component being cast or pressed using a nickel alloy containing chromium Made. The method of fabricating a semiconductor processing apparatus according to claim 14, wherein the chromium-containing nickel alloy is a Herst nickel alloy or a high-alloy nickel alloy.