JP2023006259A - Sample processing device and shield - Google Patents

Abstract

To provide a sample processing device capable of reducing sputtered particles adhering to the inner wall of a vacuum chamber.SOLUTION: A sample processing device 100 includes a sample processing device that processes a sample 2 by irradiating an ion beam IB to a sample 2 includes an ion source 20 that irradiates the sample 2 with the ion beam IB, a vacuum chamber in which the sample 2 is accommodated, a shielding member 50 placed on the sample 2 and shielding the ion beam IB, and a shield 60 against which sputtered particles generated by irradiation of the shielding member 50 with the ion beam IB collide, and the ion beam IB passes between the shield 60 and the shielding member 50 and irradiates the sample 2.SELECTED DRAWING: Figure 10

Description

The present invention relates to a sample processing device and shield.

As a sample processing apparatus that processes a sample using an ion beam, a cross section polisher (registered trademark) for processing a cross section of a sample, an ion slicer (registered trademark) for preparing a thin film sample, and the like are known. .

For example, in Patent Document 1, a part of a sample is covered with a shielding member, and an ion beam is irradiated onto the sample from the side of the shielding member, thereby cutting a portion of the sample not covered with the shielding member with the ion beam, A sample processing apparatus for processing a cross section of a sample is disclosed.

JP 2010-230665 A

In recent years, there has been a demand for making a cross section with a larger area using such a sample processing apparatus. However, when a cross section having a large area is produced, the amount of sputtered particles generated by ion beam irradiation increases, and many sputtered particles adhere to the inner wall of the vacuum chamber.

One aspect of the sample processing apparatus according to the present invention is
A sample processing apparatus for processing the sample by irradiating the sample with an ion beam,
an ion source for irradiating the sample with the ion beam;
a vacuum chamber in which the sample is accommodated;
a shielding member disposed on the sample and shielding the ion beam;
a shield against which the sputtered particles emitted from the shielding member collide when the shielding member is irradiated with the ion beam;
including
The ion beam passes between the shield and the shielding member to irradiate the sample.

Such a sample processing apparatus includes a shield against which sputtered particles generated by irradiating the shielding member with the ion beam collide, and the ion beam passes between the shield and the shielding member, so the sputtered particles are efficiently captured. can be collected. Therefore, in such a sample processing apparatus, sputtered particles adhering to the inner wall of the vacuum chamber can be reduced.

One aspect of the shield according to the present invention is
A shield used in a sample processing apparatus that processes a sample by irradiating an ion beam through a shielding member to a sample housed in a vacuum chamber,
a collecting surface for collecting sputtered particles emitted from the shielding member when the ion beam is irradiated onto the shielding member;
Sputtered particles emitted from the shielding member collide with the collecting surface,
The ion beam is arranged to pass between the collecting surface and the shielding member when attached to the shielding member.

Such a shield includes a collection surface against which sputtered particles generated by irradiation of the shielding member with the ion beam collide. can be collected well. Therefore, such a shield can reduce sputtered particles adhering to the inner wall of the vacuum chamber.

1 is a diagram showing the configuration of a sample processing apparatus according to one embodiment of the present invention; FIG. 1 is a diagram showing the configuration of a sample processing apparatus according to one embodiment of the present invention; FIG. The perspective view which shows typically the shielding member before mounting|wearing with a shield. The perspective view which shows typically the shield with which the shielding member was mounted|worn. The perspective view which shows a shield typically. The perspective view which shows a shield typically. SEM images showing uneven and smooth surfaces of ABS resin. FIG. 10 is an SEM image showing a film formed by sputtered particles adhering to an uneven surface of ABS resin and a film formed by sputtered particles adhering to a smooth surface. FIG. 4 is a perspective view schematically showing a shielding member and a sample being processed; The figure for demonstrating the function of a shield. The perspective view which shows typically the shield of the sample processing apparatus which concerns on a 1st modification, a shielding member, and a sample holder. The perspective view which shows typically the shield with which the shielding member was mounted|worn. The perspective view which shows a shield typically. FIG. 11 is a perspective view schematically showing a shield attached to a shielding member in a sample processing apparatus according to a second modified example; The perspective view which shows a shield typically.

Preferred embodiments of the present invention will be described in detail below with reference to the drawings. It should be noted that the embodiments described below do not unduly limit the scope of the invention described in the claims. Moreover, not all the configurations described below are essential constituent elements of the present invention.

1. Sample processing device 1.1. Configuration of Sample Processing Apparatus First, a sample processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. 1 and 2 are diagrams showing the configuration of a sample processing apparatus 100 according to one embodiment of the present invention. In FIGS. 1 and 2, X-axis, Y-axis, and Z-axis are illustrated as three axes orthogonal to each other.

The sample processing apparatus 100 is an apparatus for processing a sample 2 by irradiating it with an ion beam IB to prepare a sample for observation and analysis. The sample processing apparatus 100 can process a cross section of the sample 2 .

The sample processing apparatus 100 is used, for example, to prepare samples for electron microscopes such as scanning electron microscopes (SEM), transmission electron microscopes (TEM), and scanning transmission electron microscopes (STEM). Also, the sample processing apparatus 100 is used, for example, to prepare a sample such as an electron probe microanalyzer (EPMA) or an Auger microprobe.

As shown in FIGS. 1 and 2, the sample processing apparatus 100 includes a vacuum chamber 10, a sample stage pull-out mechanism 12, an exhaust device 14, an exhaust control unit 16, an ion source 20, a sample holder 30, and a sample. It includes a stage 40 , a sample stage rotating mechanism 42 , a shielding member 50 , a shield 60 , an alignment camera 70 , and a processing observation camera 80 .

A sample 2 is accommodated in the vacuum chamber 10 . In the vacuum chamber 10, the sample 2 is irradiated with an ion beam IB. The inside of the vacuum chamber 10 is evacuated by an exhaust device 14 . The exhaust device 14 is controlled by an exhaust controller 16 .

The sample stage pull-out mechanism 12 is a mechanism for pulling out the sample stage 40 from within the vacuum chamber 10 . The sample stage pull-out mechanism 12 is attached to the vacuum chamber 10 so as to be openable and closable so as to close the opening of the vacuum chamber 10 . A sample stage 40 is attached to the sample stage pull-out mechanism 12 .

The ion source 20 irradiates the sample 2 with an ion beam IB. An ion source 20 is attached to the top of the vacuum chamber 10 . The ion source 20 is, for example, an ion gun. The ion source 20 accelerates and emits the ion beam IB at a predetermined acceleration voltage. The ion source 20 ionizes, for example, Ar gas and emits an ion beam IB.

The diameter of the ion beam IB is, for example, about 1 to 2 mm. Ion source 20 emits an ion beam IB along the Z-axis. The optical axis (central axis) of the ion beam IB is parallel to the Z axis. The ion source 20 may have a lens (electrode) for changing the diameter of the ion beam IB.

The sample holder 30 is attached to the sample stage 40 . The sample holder 30 is detachable with respect to the sample stage 40 . A sample holder 30 holds the sample 2 . A shielding member 50 is attached to the sample holder 30 .

The sample stage 40 holds the sample 2 . The sample stage 40 holds the sample 2 via the sample holder 30 . The sample stage 40 is attached to the sample stage pull-out mechanism 12 via a sample stage rotating mechanism 42 .

The sample stage 40 is rotated by a sample stage rotating mechanism 42 . As the sample stage 40 rotates, the sample holder 30 rotates. Thereby, the sample 2 can be oscillated (reciprocating tilting motion). The sample stage rotation mechanism 42 rotates the sample stage 40 with the axis A2 as the rotation axis. Axis A2 is parallel to the Y-axis. The sample stage rotation mechanism 42 includes, for example, a motor that rotates the sample stage 40 .

The shielding member 50 is arranged on the sample 2 and shields the ion beam IB. In the sample processing apparatus 100, the portion of the sample 2 protruding from the shielding member 50 is irradiated with the ion beam IB. Thereby, the cross section of the sample 2 can be processed. The shielding member 50 is made of a material that is difficult to be cut by the ion beam IB. The material of the shielding member 50 is, for example, metal. The material of the shielding member 50 is, for example, a ferromagnetic material.

The shield 60 is attached to the shielding member 50 . Sputtered particles generated by irradiating the shielding member 50 , the sample 2 , the bottom surface of the vacuum chamber 10 and the like with the ion beam IB collide with the shield 60 . As a result, sputtered particles adhering to the inner wall of the vacuum chamber 10 can be reduced. Details of the shield 60 will be described later.

The alignment camera 70 is attached to the upper end of the sample stage pull-out mechanism 12 . Alignment camera 70 is, for example, a camera attached to an optical microscope. The alignment camera 70 can observe the sample 2 placed on the sample stage 40 from the Z direction.

When the target processing position of the sample 2 is aligned with the center of the field of view of the alignment camera 70 with the sample stage drawing mechanism 12 shown in FIG. The ion beam IB emitted from 20 is irradiated to the target processing position. As described above, in the sample processing apparatus 100 , the target processing position of the sample 2 can be irradiated with the ion beam IB by adjusting the position of the sample 2 using the alignment camera 70 .

The processing observation camera 80 is arranged outside the vacuum chamber 10 . The processing observation camera 80 can observe the inside of the vacuum chamber 10 through an observation window 82 provided in the vacuum chamber 10 . The optical axis of the processing observation camera 80 coincides with the axis A2, for example. The processing observation camera 80 can observe the sample 2 placed on the sample stage 40 from the Y direction.

1.2. Shield FIG. 3 is a perspective view schematically showing the shielding member 50 before the shield 60 is attached.

The shielding member 50 has a plate shape. The height of the shielding member 50 is, for example, about 1 cm. The shielding member 50 has an irradiated surface 52 irradiated with the ion beam IB. The irradiated surface 52 is a surface including an irradiated region irradiated with the ion beam IB.

A shielding member 50 is arranged on the sample 2 . The shielding member 50 is arranged on the sample 2 such that a portion of the sample 2 protrudes from the shielding member 50 . The length of the portion where the sample 2 protrudes from the shielding member 50 is, for example, about 100 μm.

FIG. 4 is a perspective view schematically showing the shield 60 attached to the shielding member 50. As shown in FIG. 5 and 6 are perspective views schematically showing the shield 60. FIG.

The shield 60 is attached to the shielding member 50 . Sputtered particles generated by irradiating the shielding member 50 and the sample 2 with the ion beam IB collide with the shield 60 . Shield 60 includes a shield body 61 and two magnets 66 .

The shield 60 is detachably attached to the shielding member 50 . The shield 60 is fixed to the shielding member 50 by the magnetic force of two magnets 66 .

The material of the shield body 61 is, for example, resin. The material of the shield body 61 is, for example, ABS resin (acrylonitrile, butadiene, styrene copolymer synthetic resin). The material of the shield body 61 is not limited to resin, and may be a material other than resin, such as metal. The shield body 61 can be produced using, for example, a 3D printer. Note that the method for manufacturing the shield body 61 is not limited to a 3D printer. For example, the shield body 61 may be manufactured by injection molding.

The shield 60, as shown in FIGS. 5 and 6, has a first collection surface 63a and a second collection surface 63b. The first collection surface 63a and the second collection surface 63b are surfaces for collecting sputtered particles. The direction in which the first collection surface 63a faces is different from the direction in which the second collection surface 63b faces.

The first collection surface 63a is a surface on which sputtered particles generated by irradiation of the shielding member 50 with the ion beam IB collide. As the sputtered particles collide with the first collecting surface 63a, the sputtered particles adhere to the first collecting surface 63a. The sputtered particles are collected by the first collection surface 6
A film (sputtered film) is formed in 3a.

The first collection surface 63a is an uneven surface. On the first collection surface 63a, unevenness may be regularly provided in a short period, or unevenness may be provided at random. When the SEM image of the first collecting surface 63a is observed with a scanning electron microscope and the size of the unevenness of the first collecting surface 63a is measured from the SEM image, the size of the unevenness of the first collecting surface 63a is, for example, , 2 μm or more and 10 μm or less. Since the first collection surface 63a is thus an uneven surface, peeling of the film formed by the sputtered particles adhering to the first collection surface 63a can be reduced.

FIG. 7 is an SEM image showing an uneven surface of ABS resin and a smooth surface of ABS resin. FIG. 8 is an SEM image showing a film formed by sputtered particles adhering to an uneven surface of ABS resin and a film formed by sputtered particles adhering to a smooth surface. The uneven surface is a surface formed by a 3D printer, and the smooth surface is a surface formed by applying heat to the surface formed by a 3D printer and smoothed.

On the uneven surface of the ABS resin shown in FIGS. 7 and 8, unevenness of about 5 μm is formed. The size of the unevenness of the uneven surface measured with a scanning electron microscope is about 5 μm. Further, the smooth surface of the ABS resin has almost no unevenness as shown in FIG. When sputtered particles are adhered to such an uneven surface and a smooth surface of the ABS resin and deposited, as shown in FIG. 8, the film formed by the sputtered particles peels off on the smooth surface. . On the other hand, no peeling of the film was observed on the uneven surface.

A plurality of grooves 65 are provided on the first collection surface 63a as shown in FIGS. By forming the plurality of grooves 65 on the first collection surface 63a, the surface area of the first collection surface 63a can be increased, and more sputtered particles can be collected.

Sputtered particles generated when the sample 2 is irradiated with the ion beam IB collide with the second collection surface 63b. Furthermore, the second collection surface 63b is arranged behind the sample 2, and is hit by the sputtered particles emitted from the irradiated member when the irradiated member is irradiated with the ion beam IB. The member to be irradiated is, for example, a current detection plate for measuring the amount of current of the ion beam IB, the bottom of the vacuum chamber 10, or the like. As the sputtered particles collide with the second collecting surface 63b, the sputtered particles adhere to the second collecting surface 63b. The second collection surface 63b is an uneven surface like the first collection surface 63a. Thus, the second collection surface 63b is a surface that collects the sputtered particles emitted from the sample or irradiated member.

In the example shown in FIG. 6, the second collection surface 63b is not provided with grooves, but the second collection surface 63b is also provided with a plurality of grooves as in the case of the first collection surface 63a. may

The shield 60 is attached to the shielding member 50 as shown in FIG. The shield body 61 is provided with two projections 62 . The projecting portion 62 is a portion that projects toward the shielding member 50 from the first collection surface 63 a when the shield 60 is attached to the shielding member 50 . An end surface 67 of the protrusion 62 contacts the shielding member 50 when the shield 60 is attached to the shielding member 50 .

A first collection surface 63 a is provided between the two protrusions 62 . Therefore, when the end surfaces 67 of the two projecting portions 62 contact the irradiated surface 52 of the shielding member 50 , the first collecting surface 63 a does not contact the irradiated surface 52 . Thereby, a passage for passing the ion beam IB can be formed between the first collecting surface 63 a and the irradiated surface 52 . By bringing the two end surfaces 67 into contact with the shielding member 50 , the first collection surface 63 a is positioned in front of the irradiated surface 52 of the shielding member 50 .

A hole 68 is provided in the projecting portion 62 . The opening of the hole 68 is provided on the end surface 67 . A magnet 66 is fixed in the hole 68 .

The magnet 66 and the shielding member 50 are separated from each other when the shield 60 is attached to the shielding member 50 . In the illustrated example, the magnet 66 is arranged behind the opening of the hole 68 provided in the end surface 67 . Therefore, even if the end surface 67 contacts the irradiated surface 52 of the shielding member 50 , the two magnets 66 do not contact the shielding member 50 .

A notch 69 is provided in the shield 60 . The notch 69 is a space surrounded by the first collection surface 63 a and the two projecting portions 62 . As shown in FIG. 4 , when the shield 60 is attached to the shielding member 50 , the ion beam IB passes through the notch 69 and irradiates the sample 2 . That is, the notch 69 becomes a passage for passing the ion beam IB.

2. Operation of Sample Processing Apparatus Next, the operation of the sample processing apparatus 100 will be described.

First, the sample 2 is mounted on the sample stage 40 . Specifically, after mounting the sample 2 and the shielding member 50 on the sample holder 30 , the shield 60 is mounted on the shielding member 50 . Shield 60 is secured to shield member 50 by two magnets 66 . Next, as shown in FIG. 2 , the sample stage pull-out mechanism 12 is opened to pull out the sample stage 40 from the vacuum chamber 10 , and the sample holder 30 is mounted on the sample stage 40 . Next, the target processing position of the sample 2 is aligned with the center of the field of view of the alignment camera 70 . After the alignment, the sample stage pull-out mechanism 12 is closed and the sample 2 is introduced into the vacuum chamber 10 as shown in FIG. The sample 2 can be mounted on the sample stage 40 by the above steps.

Next, the sample 2 is irradiated with an ion beam IB from the ion source 20 . The sample 2 is irradiated with the ion beam IB through the shielding member 50 . The ion beam IB is applied to the portion of the sample 2 protruding from the shielding member 50 .

During irradiation with the ion beam IB, the sample stage rotating mechanism 42 is operated to swing the sample stage 40 about the axis A2. As a result, the sample 2 and the shielding member 50 oscillate. By oscillating the sample 2, it is possible to reduce processing streaks, which are irradiation traces of the ion beam IB, formed on the cross section of the sample 2. FIG. The state of the sample 2 being processed can be confirmed by the processing observation camera 80 .

FIG. 9 is a perspective view schematically showing the shielding member 50 and the sample 2 during processing. FIG. 10 is a diagram for explaining the function of the shield 60. FIG. In FIG. 10, ions are indicated by solid-line arrows, and sputtered particles are indicated by broken-line arrows.

As shown in FIG. 10, the ion beam IB emitted from the ion source 20 passes between the shield 60 and the shielding member 50 to irradiate the sample 2 . The ion beam IB is applied to the shielding member 50 and the sample 2 as shown in FIG. Sputtered particles are emitted from the irradiated region 54 of the irradiated surface 52 of the shielding member 50 irradiated with the ion beam IB. The sputtered particles emitted into the space move linearly from the irradiated region 54, collide with the first collection surface 63a of the shield 60, and are collected by the first collection surface 63a.

Here, the ion beam IB passes between the first collecting surface 63 a and the irradiated surface 52 . In addition, when viewed from the direction of the perpendicular P to the irradiated surface 52 , that is, the direction along the perpendicular P, the first collection surface 63 a overlaps the irradiated region 54 . Therefore, the sputtered particles emitted from the irradiated region 54 can be efficiently collected by the shield 60 . By attaching the shield 60 to the shielding member 50, the shield 60 and the shielding member 50 can surround the space from which the sputtered particles generated in the irradiated region 54 are emitted, as shown in FIG.

The sample 2 is irradiated with the ion beam IB that has passed between the shielding member 50 and the shield 60 , and sputtered particles are emitted from the sample 2 . The sputtered particles emitted from the sample 2 move linearly, collide with the second collection surface 63b of the shield 60, and are collected by the second collection surface 63b.

A part of the ion beam IB that has passed between the shielding member 50 and the shield 60 is irradiated onto a member arranged behind the sample 2 (sample stage 40). For example, although not shown, a current detection plate for measuring the current amount of the ion beam IB is arranged behind the sample 2 . By irradiating the current detection plate with the ion beam IB, sputtered particles are emitted from the current detection plate. Also, behind the sample 2 is the bottom of the vacuum chamber 10 . By irradiating the bottom of the vacuum chamber 10 with the ion beam IB, sputtered particles are emitted from the bottom of the vacuum chamber 10 . Sputtered particles emitted from a member to be irradiated, such as the current detection plate and the vacuum chamber 10, arranged behind the sample 2 collide with the second collection surface 63b of the shield 60 and are collected by the second collection surface 63b. be done. The second collection surface 63b faces downward, that is, toward the bottom of the vacuum chamber 10 in the illustrated example. Therefore, the sputtered particles emitted from the current detection plate arranged behind the sample 2 and the bottom of the vacuum chamber 10 can be efficiently collected.

During the processing of the sample 2, the sample 2 can be observed by the camera 80 for processing observation. As shown in FIG. 10, the shield 60 is arranged above the sample 2 (in the +Z direction) so that the field of view of the processing observation camera 80 is not blocked by the shield 60 .

3. Effect The sample processing apparatus 100 includes a shield 60 against which the sputtered particles emitted from the shielding member 50 collide when the shielding member 50 is irradiated with the ion beam IB. The sample 2 is irradiated through the space. Therefore, the sample processing apparatus 100 can efficiently collect the sputtered particles emitted from the shielding member 50 . As a result, sputtered particles adhering to the inner wall of the vacuum chamber 10 can be reduced.

For example, in a conventional sample processing apparatus, sputtered particles adhering to the inner wall of the vacuum chamber had to be scraped off with a spatula, a brush, or the like. Since this work is accompanied by dust generation, workers had to protect their bodies with equipment such as dust masks and gloves while working. In the sample processing apparatus 100, by using the shield 60, sputtered particles adhering to the inner wall of the vacuum chamber 10 can be reduced, so that the frequency of work can be reduced.

Further, for example, in order to reduce contamination adhering to the vacuum chamber, there is known a method of adsorbing fine particles or the like that cause contamination to a cooling member. However, sputtered particles generated by irradiation of the shielding member with the ion beam have high energy and are emitted from the shielding member into space. Therefore, such sputtered particles move linearly. Therefore, the technique of adsorbing fine particles to the cooling member can hardly collect the sputtered particles generated by the irradiation of the shielding member with the ion beam.

On the other hand, in the sample processing apparatus 100, since the shield 60 is arranged so that the ion beam IB passes between the shield 60 and the shielding member 50, the spatter emitted from the shielding member 50 by the shield 60 Particles can be collected efficiently.

In the sample processing apparatus 100, the shield 60 has a first collection surface 63a that collects the sputtered particles. 50 has an irradiated surface 52 including an irradiated area 54 irradiated with an ion beam IB, and the ion beam IB passes between the first collecting surface 63 a and the irradiated surface 52 . Therefore, the sputtered particles emitted from the irradiated region 54 can be efficiently collected by the first collection surface 63a.

In the sample processing apparatus 100 , the first collecting surface 63 a overlaps the irradiated region 54 when viewed from the direction of the perpendicular line P of the irradiated surface 52 . Therefore, the sputtered particles emitted from the irradiated region 54 can be efficiently collected by the first collection surface 63a.

In the sample processing apparatus 100, the first collection surface 63a is an uneven surface. Therefore, peeling of the film formed by the sputtered particles adhering to the first collection surface 63a can be reduced.

In the sample processing apparatus 100, a plurality of grooves 65 are provided on the first collection surface 63a. Therefore, in the sample processing apparatus 100, the area of the first collection surface 63a can be increased, and more sputtered particles can be collected.

The sample processing apparatus 100 is arranged after the sample 2 and includes a member to be irradiated with the ion beam IB, and the shield 60 is emitted from the member to be irradiated when the member to be irradiated is irradiated with the ion beam IB. It has a second collection surface 63b for collecting sputtered particles. Sputtered particles emitted from the irradiated member collide with the second collection surface 63b, and the direction in which the first collection surface 63a faces is different from the direction in which the second collection surface 63b faces. Therefore, in the sample processing apparatus 100 , not only the sputtered particles emitted from the shielding member 50 but also the sputtered particles emitted from the member to be irradiated located downstream of the sample 2 can be collected. As a result, sputtered particles adhering to the inner wall of the vacuum chamber 10 can be reduced.

In the sample processing apparatus 100, the shield 60 is detachably attached to the shielding member 50. As shown in FIG. Therefore, the sputtered particles adhering to the shield 60 can be easily removed. Alternatively, the shield 60 may be disposable.

In the sample processing apparatus 100, the shield 60 has a magnet 66 that is detachably attached to the shielding member 50. As shown in FIG. Therefore, the shield 60 can be easily detachably attached to the shielding member 50 .

In the sample processing apparatus 100 , the magnet 66 and the shielding member 50 are separated from each other when the shield 60 is attached to the shielding member 50 . Therefore, deterioration of the magnet 66 due to heat can be reduced.

Here, magnets generally deteriorate due to heat. Since the shielding member 50 is irradiated with the ion beam IB, the shielding member 50 becomes hot. In the sample processing apparatus 100, as described above, when the shield 60 is attached to the shielding member 50, the magnet 66 and the shielding member 50 are separated from each other. , the heat of the shielding member 50 is less likely to be transmitted to the magnet 66 . Therefore, the sample processing apparatus 100 can reduce deterioration of the magnet 66 due to heat.

The shield 60 includes a first collection surface 63a that collects the sputtered particles emitted from the shielding member 50 when the shielding member 50 is irradiated with the ion beam IB, and the sputtered particles emitted from the shielding member 50 are It collides with the first collection surface 63a. Also, the shield 60 is arranged so that the ion beam IB passes between the collection member 60 a and the shield member 50 when the shield 60 is attached to the shield member 50 . Therefore, by using the shield 60 , the sputtered particles emitted from the shielding member 50 can be efficiently collected in the sample processing apparatus 100 .

4. Modification 4.1. First Modification FIG. 11 is a perspective view schematically showing the shield 60, the shielding member 50, and the sample holder 30 of the sample processing apparatus according to the first modification. FIG. 12 is a perspective view schematically showing the shield 60 attached to the shielding member 50. As shown in FIG. FIG. 13 is a perspective view schematically showing the shield 60. FIG. Hereinafter, in the sample processing apparatus according to the first modification shown in FIGS. 11 to 13, members having the same functions as the constituent members of the sample processing apparatus 100 described above are denoted by the same reference numerals, and detailed description thereof will be provided. omitted.

In the examples shown in FIGS. 4-6 described above, the shield 60 was attached to the shielding member 50 by magnets 66 .

Alternatively, the shield 60 may be mechanically attached to the shielding member 50, as shown in FIGS. 11-13.

In the example shown in FIGS. 11 to 13, the shield 60 is provided with an insertion opening 202 into which the shielding member 50 is inserted. The shield 60 has beams 204 extending from the two projections 62 and surrounding the shielding member 50 , and the area surrounded by the beams 204 serves as an insertion opening 202 .

The shield 60 is fixed to the shielding member 50 by inserting the shielding member 50 into the insertion opening 202 . By mechanically attaching the shield 60 to the shielding member 50 in this manner, the shield 60 can be detachably attached to the shielding member 50 regardless of the material of the shielding member 50 .

Two holes 68 in the shield 60 contain weights, for example. Thereby, the shield 60 can be stably fixed by the shielding member 50 .

The sample processing apparatus according to the first modification can achieve the same effects as the sample processing apparatus 100 described above.

4.2. Second Modification FIG. 14 is a perspective view schematically showing a shield 60 attached to a shielding member 50 in a sample processing apparatus according to a second modification. FIG. 15 is a perspective view schematically showing the shield 60. FIG. Hereinafter, in the sample processing apparatus according to the second modification shown in FIGS. 14 and 15, members having the same functions as the constituent members of the sample processing apparatus 100 described above are denoted by the same reference numerals, and detailed description thereof will be provided. omitted.

As shown in FIGS. 14 and 15, the shield 60 has a collecting member 60a having a first collecting surface 63a and a second collecting surface 63b, and a support member 60b supporting the collecting member 60a. , the collection member 60a is detachable from the support member 60b.

The material of the collection member 60a is, for example, different from the material of the support member 60b. The material of the collection member 60a is, for example, ABS resin. The collection member 60a is, for example, a resin block having a first collection surface 63a and a second collection surface 63b.

The support member 60b supports the collection member 60a. The support member 60b has an opening 301 into which the collection member 60a is inserted. By inserting the collection member 60a into the opening 301, the collection member 60a is supported by the support member 60b.

Shield 60 has two arms 302 extending from support member 60b. The shield 60 is attached to the shielding member 50 by gripping the sample holder 30 with these two arms 302 . A notch 304 is formed in each of the two arms 302 , and the shield 60 can be attached to the shielding member 50 by inserting the sample holder 30 into the notch 304 .

The method of attaching the shield 60 to the shielding member 50 is not particularly limited. For example, as shown in FIGS. 12 and 15, the shield 60 may be attached to the shield member 50 by fixing the shield 60 to the sample holder 30 to which the shield member 50 is fixed, or as shown in FIG. Alternatively, the shield 60 may be attached to the shielding member 50 by directly fixing the shield 60 to the shielding member 50 .

By making the collection member 60a detachable from the support member 60b, only the collection member 60a can be replaced. For example, the material of the collection member 60a may be ABS resin, which is inexpensive and easy to process, and the collection member 60a may be disposable.

The sample processing apparatus according to the second modification can achieve the same effects as the sample processing apparatus 100 described above.

It should be noted that the above-described embodiments and modifications are examples, and the present invention is not limited to these. For example, each embodiment and each modification can be combined as appropriate.

The present invention is not limited to the above-described embodiments, and various modifications are possible. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments. "Substantially the same configuration" means, for example, a configuration having the same function, method, and result, or a configuration having the same purpose and effect. Moreover, the present invention includes configurations in which non-essential portions of the configurations described in the embodiments are replaced. In addition, the present invention includes a configuration that achieves the same effects or achieves the same purpose as the configurations described in the embodiments. In addition, the present invention includes configurations obtained by adding known techniques to the configurations described in the embodiments.

Reference Signs List 2 Sample 10 Vacuum chamber 12 Sample stage drawing mechanism 14 Exhaust device 16 Exhaust controller 20 Ion source 30 Sample holder 40 Sample stage 42 Sample stage rotation mechanism 50 Shielding member 52 Irradiated surface 54 Irradiated region 60 Shield 60a Collection member 60b Support member 61 Shield main body 62 Projection 63a First collection surface 63b Second collection surface 65 Groove 66 Magnet 67 End face 68 Hole 69 Notch 70 Alignment camera 80 Processing observation camera 82 Observation window 100 Sample Processing device 202 Insertion port 204 Beam 301 Opening 302 Arm 304 Notch

Claims (13)

A sample processing apparatus for processing the sample by irradiating the sample with an ion beam,
an ion source for irradiating the sample with the ion beam;
a vacuum chamber in which the sample is accommodated;
a shielding member disposed on the sample and shielding the ion beam;
a shield against which the sputtered particles emitted from the shielding member collide when the shielding member is irradiated with the ion beam;
including
A sample processing apparatus, wherein the ion beam passes between the shield and the shielding member to irradiate the sample. In claim 1,
The shield has a first collection surface that collects sputtered particles emitted from the shielding member,
The sample processing apparatus, wherein sputtered particles emitted from the shielding member collide with the first collection surface. In claim 2,
The shielding member has an irradiated surface including an irradiated region irradiated with the ion beam,
The sample processing apparatus, wherein the ion beam passes between the first collection surface and the irradiated surface. In claim 3,
The sample processing apparatus, wherein the first collection surface overlaps the irradiated region when viewed from a direction perpendicular to the irradiated surface. In any one of claims 2 to 4,
The sample processing device, wherein the first collection surface is an uneven surface. In any one of claims 2 to 5,
The sample processing device, wherein the first collection surface is provided with a plurality of grooves. In any one of claims 2 to 6,
including an irradiated member disposed after the sample and irradiated with the ion beam;
The shield has a second collection surface for collecting sputtered particles emitted from the irradiated member when the ion beam is irradiated onto the irradiated member,
Sputtered particles emitted from the member to be irradiated collide with the second collection surface,
The sample processing device, wherein the direction in which the first collection surface faces is different from the direction in which the second collection surface faces. In any one of claims 2 to 7,
The sample processing apparatus, wherein the material of the member having the first collection surface is resin. In any one of claims 2 to 8,
The shield is
a collecting member having the first collecting surface;
a support member that supports the collection member;
has
A sample processing apparatus, wherein the collection member is detachably attached to the support member. In any one of claims 1 to 9,
A sample processing apparatus, wherein the shield is detachably attached to the shielding member. In claim 10,
The sample processing apparatus, wherein the shield has a magnet detachably attached to the shielding member. In claim 11,
A sample processing apparatus, wherein the magnet and the shielding member are separated from each other when the shield is attached to the shielding member. A shield used in a sample processing apparatus that processes a sample by irradiating an ion beam through a shielding member to a sample housed in a vacuum chamber,
a collecting surface for collecting sputtered particles emitted from the shielding member when the ion beam is irradiated onto the shielding member;
Sputtered particles emitted from the shielding member collide with the collecting surface,
A shield arranged such that the ion beam passes between the collecting surface and the shielding member when attached to the shielding member.

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