JP2022546392A - マイクロledディスプレイ - Google Patents
マイクロledディスプレイ Download PDFInfo
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- JP2022546392A JP2022546392A JP2022513047A JP2022513047A JP2022546392A JP 2022546392 A JP2022546392 A JP 2022546392A JP 2022513047 A JP2022513047 A JP 2022513047A JP 2022513047 A JP2022513047 A JP 2022513047A JP 2022546392 A JP2022546392 A JP 2022546392A
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- 238000000295 emission spectrum Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 11
- 239000011358 absorbing material Substances 0.000 claims description 9
- 230000031700 light absorption Effects 0.000 claims description 6
- 230000003667 anti-reflective effect Effects 0.000 claims description 5
- 239000006229 carbon black Substances 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 53
- 238000000576 coating method Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 230000003670 easy-to-clean Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000003666 anti-fingerprint Effects 0.000 description 2
- 230000003373 anti-fouling effect Effects 0.000 description 2
- 229910001593 boehmite Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000003301 hydrolyzing effect Effects 0.000 description 2
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000001028 reflection method Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000012482 calibration solution Substances 0.000 description 1
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- 229920000515 polycarbonate Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract
Description
Claims (10)
- 青色、緑色、及び赤色のそれぞれの半値全幅(FWHM)を有する、青色、緑色、及び赤色のそれぞれのピーク波長に青色、緑色、及び赤色のそれぞれの発光ピークを含む青色、緑色、及び赤色のそれぞれの発光スペクトルを有する青色、緑色、及び赤色の複数の発光マイクロLEDと、
前記青色、緑色、及び赤色の複数の発光マイクロLED上に配置され、青色、緑色、及び赤色のそれぞれのFWHMを有する実質的に互いに異なる青色、緑色、及び赤色の透過帯域を含み、実質的に垂直な入射光について、前記青色、緑色、及び赤色ピーク波長の各々において約50%超の光透過率を有する部分的光透過層であって、前記部分的光透過層の前記青色、緑色、及び赤色のFWHMが、前記青色、緑色、及び赤色の発光マイクロLEDの前記青色、緑色、及び赤色のそれぞれのFWHMよりも少なくとも10%だけ小さい部分的光透過層と、を備える、
ディスプレイ。 - 前記青色ピーク波長と前記緑色ピーク波長との間に位置する少なくとも1つの青緑色波長、及び前記緑色ピーク波長と前記赤色ピーク波長との間に位置する少なくとも1つの緑赤色波長の各々について、前記部分的光透過層が、前記青色、緑色、及び赤色ピーク波長の少なくとも1つにおいて約10%未満の光透過率及び約1%超の光吸収率を有し、前記約1%超の光吸収率が光吸収材料を含む前記部分的光透過層によるものであり、前記光吸収材料がカーボンブラックを含む、請求項1に記載のディスプレイ。
- 複数の青色光発光源であって、各青色光発光源が、発光強度Ibを有する青色ピーク波長に青色発光ピークを含む発光スペクトルを有し、前記青色光発光源のうちの少なくとも1つの前記発光スペクトルが、青色波長ではない第1の可視波長において第1の発光強度I1を含み、I1/Ib>0.2である複数の青色光発光源と、
前記複数の青色光発光源上に配置された部分的光透過層であって、実質的に垂直な入射光について、前記青色ピーク波長における光透過率Tb、及び前記第1の可視波長における光透過率T1を有し、T1/Tb<0.1である部分的光透過層と、を備える、
ディスプレイ。 - 前記各青色光発光源が、青色発光マイクロ発光ダイオード(マイクロLED)である、請求項3に記載のディスプレイ。
- I1/Ib>0.4、かつT1/Tb<0.05である、請求項3に記載のディスプレイ。
- 前記複数の青色光発光源が基板上に配置され、前記基板がプリント回路基板であるか、又は前記基板が薄膜トランジスタ(TFT)ガラス層を含む、請求項3に記載のディスプレイ。
- 前記部分的光透過層が合計で約50超の数の複数のポリマー層を含む、請求項3に記載のディスプレイ。
- 前記第1の可視波長が緑色波長又は赤色波長であり、前記青色ピーク波長が約475nm未満である、請求項3に記載のディスプレイ。
- 前記部分的光透過層が、前記青色ピーク波長において約1%超の光吸収率を有し、前記約1%超の光吸収率が光吸収材料を含む前記部分的光透過層によるものであり、前記光吸収材料がカーボンブラックを含む、請求項3に記載のディスプレイ。
- 前記部分的光透過層が、その主表面上に前記複数の青色光発光源から離して配置された反射防止層を含む、請求項3に記載のディスプレイ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962893227P | 2019-08-29 | 2019-08-29 | |
US62/893,227 | 2019-08-29 | ||
PCT/IB2020/057897 WO2021038425A1 (en) | 2019-08-29 | 2020-08-24 | Micro led display |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2022546392A true JP2022546392A (ja) | 2022-11-04 |
JPWO2021038425A5 JPWO2021038425A5 (ja) | 2023-09-04 |
JP7512372B2 JP7512372B2 (ja) | 2024-07-08 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2022513047A Active JP7512372B2 (ja) | 2019-08-29 | 2020-08-24 | マイクロledディスプレイ |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220359471A1 (ja) |
JP (1) | JP7512372B2 (ja) |
CN (1) | CN114144824A (ja) |
WO (1) | WO2021038425A1 (ja) |
Family Cites Families (30)
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JPH08250767A (ja) * | 1995-03-13 | 1996-09-27 | Nichia Chem Ind Ltd | 窒化物半導体led |
TW528169U (en) | 2000-05-04 | 2003-04-11 | Koninkl Philips Electronics Nv | Assembly of a display device and an illumination system |
CN100511758C (zh) * | 2004-03-31 | 2009-07-08 | 三洋电机株式会社 | 有机电致发光显示装置 |
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KR20090047205A (ko) * | 2007-11-07 | 2009-05-12 | 삼성에스디아이 주식회사 | 액정 표시장치 |
JP2009158140A (ja) * | 2007-12-25 | 2009-07-16 | Sony Corp | エレクトロルミネッセンス素子及びこれを用いた表示装置並びに照明装置 |
BRPI1016119A2 (pt) * | 2009-04-27 | 2019-09-24 | Mri Inc | led branco para iluminacao traseira de uma tela de cristal liquido |
KR101683270B1 (ko) | 2010-03-31 | 2016-12-21 | 삼성전자 주식회사 | 백색 발광 다이오드를 포함하는 액정 디스플레이 장치 |
KR101822537B1 (ko) | 2011-03-31 | 2018-01-29 | 삼성디스플레이 주식회사 | 발광 다이오드 패키지, 이의 제조 방법, 및 이를 갖는 표시 장치 |
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-
2020
- 2020-08-24 JP JP2022513047A patent/JP7512372B2/ja active Active
- 2020-08-24 CN CN202080053611.6A patent/CN114144824A/zh active Pending
- 2020-08-24 WO PCT/IB2020/057897 patent/WO2021038425A1/en active Application Filing
- 2020-08-24 US US17/597,803 patent/US20220359471A1/en active Pending
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CN114144824A (zh) | 2022-03-04 |
US20220359471A1 (en) | 2022-11-10 |
WO2021038425A1 (en) | 2021-03-04 |
JP7512372B2 (ja) | 2024-07-08 |
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