JP2022524824A - PTGER3阻害剤によりTTFields-耐性がん細胞におけるTTFieldsに対する感受性を回復させるための方法 - Google Patents
PTGER3阻害剤によりTTFields-耐性がん細胞におけるTTFieldsに対する感受性を回復させるための方法 Download PDFInfo
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Abstract
Description
本出願は、米国仮出願第62/826,078号(2019年3月29日に出願された)、及び同第62/849,535号(2019年5月17日に出願された)の利益を主張し、これらのそれぞれは参照によりその全体が本明細書に組み込まれる。本明細書において引用されるすべての特許、特許出願、及び刊行物は、参照によりその全体が組み込まれる。
Claims (26)
- 対象におけるTTFields耐性がん細胞の生存率を低下させる方法であって、
プロスタグランジンE受容体3(PTGER3)阻害剤を対象に投与することを推奨する工程と、
100から500kHzの間の周波数を有する交流電場を対象のがん細胞に印加する工程と
を含む、方法。 - 交流電場が、100から300kHzの間の周波数を有する、請求項1に記載の方法。
- PTGER3阻害剤が、NSAID、cox2阻害剤、L798,106、及びDG041のうちの1つ又は複数からなる群から選択される、請求項1に記載の方法。
- PTGER3阻害剤が、アスピリン及びイブプロフェンからなる群から選択される、請求項1に記載の方法。
- 対象におけるPTGER3阻害剤の推奨濃度が、L798,106では約1から500ナノモル、アスピリンでは約0.1から2ミリモル、又はDG041では約0.5から50ナノモル、又はセレコキシブでは約1から500ナノモルである、請求項4に記載の方法。
- 対象におけるPTGER3阻害剤の推奨濃度が、少なくとも約3日間から5週間維持される、請求項5に記載の方法。
- がん細胞が、神経膠芽腫、肺がん、膵臓がん、中皮腫、卵巣がん、及び乳がんの細胞からなる群から選択される、請求項1に記載の方法。
- 対象のがん細胞に交流電場に対する耐性が生じることを妨げる方法であって、
プロスタグランジンE受容体3阻害剤を対象に投与することを推奨する工程と、
100から500kHzの間の周波数を有する交流電場を対象のがん細胞に印加する工程と
を含む、方法。 - 交流電場が、100から300kHzの間の周波数を有する、請求項8に記載の方法。
- PTGER3阻害剤が、NSAID、cox2阻害剤、L798,106、及びDG041からなる群から選択される、請求項8に記載の方法。
- PTGER3阻害剤が、アスピリン及びイブプロフェンからなる群から選択される、請求項10に記載の方法。
- 対象におけるPTGER3阻害剤の推奨濃度が、L798,106では約1から500ナノモル、アスピリンでは約0.1から2ミリモル、又はDG041では約0.5から50ナノモル、又はセレコキシブでは約1から500ナノモルである、請求項11に記載の方法。
- 対象におけるPTGER3阻害剤の推奨濃度が、少なくとも約3日間から5週間維持される、請求項12に記載の方法。
- がん細胞が、神経膠芽腫、肺がん、膵臓がん、中皮腫、卵巣がん、及び乳がんの細胞からなる群から選択される、請求項8に記載の方法。
- 対象のTTFields耐性がん細胞におけるTTFieldsに対する感受性を回復させる方法であって、PTGER3阻害剤を対象に投与することを推奨する工程を含み、対象のTTFields耐性がん細胞におけるTTFieldsに対する感受性が実質的に回復される、方法。
- PTGER3阻害剤が、NSAID、cox2阻害剤、F798,106、及びDG041からなる群から選択される、請求項15に記載の方法。
- PTGER3阻害剤が、アスピリン及びイブプロフェンからなる群から選択される、請求項16に記載の方法。
- PTGER3阻害剤が対象に投与された後の対象におけるPTGER3阻害剤の推奨濃度が、L798,106では約1から500ナノモル、アスピリンでは約0.1から2ミリモル、又はDG041では約0.5から50ナノモル、又はセレコキシブでは約1から500ナノモルである、請求項17に記載の方法。
- PTGER3阻害剤が対象に投与された後の対象におけるPTGER3阻害剤の推奨濃度が、少なくとも約3日間から5週間維持される、請求項18に記載の方法。
- がん細胞が、神経膠芽腫、肺がん、膵臓がん、中皮腫、卵巣がん、及び乳がんの細胞からなる群から選択される、請求項15に記載の方法。
- 対象におけるTTFields耐性がん細胞の生存率を低下させる方法であって、
PTGER3阻害剤を対象に処方する工程と、
100から500kHzの間の周波数を有する交流電場をがん細胞に印加する工程と
を含む、方法。 - 対象のがん細胞に交流電場に対する耐性が生じることを妨げる方法であって、
PTGER3阻害剤を対象に処方する工程と、
100から500kHzの間の周波数を有する交流電場をがん細胞に印加する工程と
を含む、方法。 - 対象のTTFields耐性がん細胞におけるTTFieldsに対する感受性を回復させる方法であって、PTGER3阻害剤を対象に処方する工程を含み、TTFieldsに対する対象のTTFields耐性がん細胞の感受性が、PTGER3阻害剤が対象に投与された後に回復される、方法。
- 対象におけるTTFields耐性がん細胞の生存率を低下させる方法であって、
EP3に制御された耐性経路における標的の阻害剤を対象に投与することを推奨する工程と、
100から500kHzの間の周波数を有する交流電場を対象のがん細胞に印加する工程と
を含む、方法。 - EP3に制御された耐性経路における標的が、ZNF488及びPRDM8からなる群から選択される、請求項24に記載の方法。
- 阻害剤が、アザシチジン及びデシタビンからなる群から選択される、請求項25に記載の方法。
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