JP2022510960A - マランゴニ乾燥の方法及び装置 - Google Patents
マランゴニ乾燥の方法及び装置 Download PDFInfo
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- 238000001035 drying Methods 0.000 title claims abstract description 42
- 239000007921 spray Substances 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000010586 diagram Methods 0.000 abstract description 3
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- 239000012530 fluid Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 8
- 239000007788 liquid Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 230000005499 meniscus Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000012855 volatile organic compound Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000001174 ascending effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
Abstract
Description
Claims (15)
- 装置であって、
ベースと、
前記ベースの上に配置された装着アセンブリであって、
クロスバーの上面から前記クロスバーの底面まで延在する複数のオリフィスを有する前記クロスバーと、
前記クロスバーの前記複数のオリフィスのうちの1つの中に配置され、前記ベースと接触しているガイドピンであって、前記ベースと前記装着アセンブリとを位置合わせするように構成されたガイドピンと、
前記クロスバーの前記複数のオリフィスのうちの1つの中に配置され、前記ベースと接触しているレベラであって、前記ベースに対して前記クロスバーを配置するように構成されたレベラと、
前記クロスバーに結合された2つのアームであって、各アームが、前記クロスバーの対向する遠位端に直交して配置され、1又は複数のスプレーバーを支持するように構成されている、2つのアームと
を含む、装着アセンブリと
を備える、装置。 - 前記複数のオリフィスのうちの少なくとも1つが、前記ガイドピンにぴったり合うように適合された滑らかな穴である、請求項1に記載の装置。
- 前記ガイドピンは、前記ベースと前記装着アセンブリとを垂直方向に位置合わせするように構成される、請求項2に記載の装置。
- 前記滑らかな穴は、前記装着アセンブリの傾斜を容易にするように円錐形になっている、請求項3に記載の装置。
- 前記複数のオリフィスのうちの少なくとも1つは、前記レベラにぴったり合うように適合されたねじ穴である、請求項1に記載の装置。
- 前記ねじ穴内の前記レベラにトルクを加えることにより、前記装着アセンブリが上昇又は下降する、請求項5に記載の装置。
- 前記複数のオリフィスのうちの1つの中に配置されたロッキングねじを更に備え、前記複数のオリフィスのうちの少なくとも1つは、前記ロッキングねじにぴったり合うように適合されたねじ穴である、請求項1に記載の装置。
- 前記ロッキングねじは、前記装着アセンブリを前記ベースに対して所望の位置に固定するように構成される、請求項7に記載の装置。
- 前記装着アセンブリの傾斜を容易にするために、前記ロッキングねじが球形ワッシャに結合される、請求項8に記載の装置。
- 装置であって、
ベースと、
前記ベースの上に配置された装着アセンブリであって、
クロスバーであって、前記クロスバーの上面から前記クロスバーの底面まで延在する複数の第1のオリフィスと、2つの遠位端とを有するクロスバーと、
前記クロスバーの前記複数の第1のオリフィスの中に配置され、前記ベースと接触している2つ以上のガイドピンであって、少なくとも1つのガイドピンが前記クロスバーの各遠位端に位置する、2つ以上のガイドピンと、
前記複数の第1のオリフィスの中に配置され、前記ベースと接触している2つ以上のレベラであって、少なくとも1つのレベラが前記クロスバーの各遠位端に位置する、2つ以上のレベラと、
前記クロスバーに結合された2つのアームであって、各アームが、前記クロスバーの対向する遠位端に直交して配置され、1又は複数の第2のオリフィスを含む、2つのアームと
を含む、装着アセンブリと、
前記2つのアームの前記1又は複数の第2のオリフィスに配置された1又は複数のスプレーバーと
を備える、装置。 - 2つの前記スプレーバーが前記1又は複数の第2のオリフィスに配置され、前記スプレーバーは、基板が輸送され得るチャネルを形成するように配置される、請求項10に記載の装置。
- 前記1又は複数のスプレーバーが、前記装着アセンブリ内に配置されている間、それらの縦軸を中心として回転可能である、請求項10に記載の装置。
- 前記2つ以上のレベラのそれぞれは、前記装着アセンブリを傾斜させるために個別に様々な量のトルクが加えられ得る、請求項10に記載の装置。
- 前記1又は複数のスプレーバーが、x、y、及びz軸を中心として調整可能である、請求項10に記載の装置。
- 基板を乾燥させる方法であって、
装着ブラケットと、前記装着ブラケットに結合されたベースと、前記ベースに結合された装着アセンブリと、前記装着アセンブリに結合され、基板の方へ蒸気を向けるように適合された1又は複数のスプレーバーとを含むスプレーバーアセンブリを乾燥システム内に配置することと、
前記スプレーバーを所望の位置及びx、y、及びz軸を中心とした回転に調整することと、
リンスプールから前記スプレーバーアセンブリを通して基板を持ち上げることと、
前記スプレーバーアセンブリから前記基板の表面上に蒸気を向けることと
を含む、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862774746P | 2018-12-03 | 2018-12-03 | |
US62/774,746 | 2018-12-03 | ||
PCT/US2019/064027 WO2020117685A1 (en) | 2018-12-03 | 2019-12-02 | Methods and apparatus for marangoni drying |
Publications (2)
Publication Number | Publication Date |
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JP2022510960A true JP2022510960A (ja) | 2022-01-28 |
JPWO2020117685A5 JPWO2020117685A5 (ja) | 2022-12-08 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2021531105A Pending JP2022510960A (ja) | 2018-12-03 | 2019-12-02 | マランゴニ乾燥の方法及び装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11735438B2 (ja) |
JP (1) | JP2022510960A (ja) |
KR (1) | KR20210088735A (ja) |
CN (1) | CN113169098A (ja) |
TW (1) | TWI828815B (ja) |
WO (1) | WO2020117685A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN117157741A (zh) * | 2021-03-03 | 2023-12-01 | 应用材料公司 | 具有整合基板对准台的干燥系统 |
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US5505645A (en) * | 1994-11-28 | 1996-04-09 | E D F Products, Inc. | Floatable assembly for swimming pools |
US6164297A (en) * | 1997-06-13 | 2000-12-26 | Tokyo Electron Limited | Cleaning and drying apparatus for objects to be processed |
US5933902A (en) | 1997-11-18 | 1999-08-10 | Frey; Bernhard M. | Wafer cleaning system |
TW391895B (en) * | 1998-10-02 | 2000-06-01 | Ultra Clean Technology Asia Pt | Method and apparatus for washing and drying semi-conductor devices |
US6575177B1 (en) * | 1999-04-27 | 2003-06-10 | Applied Materials Inc. | Semiconductor substrate cleaning system |
EP1202336B1 (en) * | 1999-07-02 | 2007-11-28 | Matsushita Electric Industrial Co., Ltd. | Electric charge generating semiconductor substrate bump forming device, method of removing electric charge from electric charge generating semiconductor substrate, device for removing electric charge from electric charge generating semiconductor substrate, and electric charge generating semiconductor substrate |
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JP4578381B2 (ja) * | 2005-10-19 | 2010-11-10 | 東京エレクトロン株式会社 | 塗布方法及び塗布装置 |
US20080053486A1 (en) | 2006-08-10 | 2008-03-06 | Applied Materials, Inc. | Semiconductor substrate cleaning apparatus |
DE112008003943B4 (de) * | 2008-07-29 | 2019-10-10 | Mitsubishi Electric Corporation | Mikroöffnungs-Funkenerosionsvorrichtung und Funkenerosionsverfahren |
JP5966250B2 (ja) * | 2011-03-16 | 2016-08-10 | 富士電機株式会社 | 基板支持治具 |
US8869422B2 (en) * | 2012-04-27 | 2014-10-28 | Applied Materials, Inc. | Methods and apparatus for marangoni substrate drying using a vapor knife manifold |
US9728428B2 (en) * | 2013-07-01 | 2017-08-08 | Applied Materials, Inc. | Single use rinse in a linear Marangoni drier |
US20160178279A1 (en) * | 2014-12-19 | 2016-06-23 | Applied Materials, Inc. | Substrate edge residue removal systems, apparatus, and methods |
US9984867B2 (en) * | 2014-12-19 | 2018-05-29 | Applied Materials, Inc. | Systems and methods for rinsing and drying substrates |
CN108257894B (zh) * | 2018-01-12 | 2020-05-19 | 清华大学 | 晶圆干燥装置 |
CN108831849A (zh) * | 2018-06-25 | 2018-11-16 | 清华大学 | 基于热马兰哥尼效应的晶圆干燥装置和干燥方法 |
-
2019
- 2019-12-02 US US16/700,738 patent/US11735438B2/en active Active
- 2019-12-02 JP JP2021531105A patent/JP2022510960A/ja active Pending
- 2019-12-02 CN CN201980079388.XA patent/CN113169098A/zh active Pending
- 2019-12-02 TW TW108143878A patent/TWI828815B/zh active
- 2019-12-02 KR KR1020217020829A patent/KR20210088735A/ko not_active Application Discontinuation
- 2019-12-02 WO PCT/US2019/064027 patent/WO2020117685A1/en active Application Filing
Also Published As
Publication number | Publication date |
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TW202029313A (zh) | 2020-08-01 |
US20200176279A1 (en) | 2020-06-04 |
US11735438B2 (en) | 2023-08-22 |
KR20210088735A (ko) | 2021-07-14 |
WO2020117685A1 (en) | 2020-06-11 |
CN113169098A (zh) | 2021-07-23 |
TWI828815B (zh) | 2024-01-11 |
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