JP2022506000A - Ceramic-based micro hot plate and its manufacturing method - Google Patents

Abstract

This application discloses a ceramic-based micro hot plate and a method for manufacturing the same. In the ceramic-based micro hot plate, a ceramic film (12) and a heating layer are sequentially formed on the first surface (111) of the silicon substrate (11), and the heating layer is electrically connected to a heating electrode (13) and a heating resistance ( The ceramic film (12) is formed by sintering from a predetermined ceramic slurry, and the heating layer is formed by sintering from a predetermined conductive slurry. In the method for manufacturing the ceramic-based micro hot plate, a ceramic film attached to the first surface and a heating layer attached to the surface of the ceramic film are formed through a drying and sintering steps in order, and a silicon substrate (11) is formed. The second surface (112) of the above is etched to form an air insulation chamber penetrating the first surface and the second surface. The ceramic-based micro hot plate has excellent high temperature resistance, can improve stability and certainty, and can reduce heating power consumption and manufacturing cost. [Selection diagram] Fig. 1

Description

Cross-reference

This application was submitted to the China Patent Office on June 29, 2018, and the priority of the Chinese patent application with the application number 201810714351.7 and the invention name "Ceramic-based micro hot plate and its manufacturing method" was given. Allegedly, all its contents are incorporated into this application.

The present invention relates to a technical field of manufacturing electronic devices, and more specifically to a ceramic-based micro hot plate and a method for manufacturing the same.

Microhotplates (MHPs) with silicon microfabrication technology are the usual heating platforms in microelectromechanical systems (MEMS), for micro equipment such as micro gas sensors, micro thermal flow meters, micro infrared detectors and barometers. It has been greatly applied. The basic configuration of the micro hot plate has a hanging dielectric film and a resistance bar. When the current passes through the resistance bar, some of the Joule heat generated from the resistance is used to heat the microhot plate, and the other part is suspended in the ambient environment by conduction, convection and radiation. Dissipating into a lowered configuration allows the microhot plate to have very low thermal inertia and very high thermal coupling efficiency, and with milliwatt level thermal power, its central temperature range can be quickly reached within a few milliseconds. The temperature can be raised. Therefore, the micro hot plate has a very fast thermal response time and low thermal power consumption.

Currently, there are three processing processes for silicon-based micro hot plates manufactured based on MEMS technology: back surface silicon processing, front surface silicon processing, and surface processing. The main process flow is the chemical vapor deposition process. , A silicon nitride thin film and a silicon oxide thin film having a certain thickness are deposited on a silicon wafer substrate, and a patterned resistance heating film is produced by a physical vapor phase deposition step, and further, a deep silicon etching step is performed. By etching the silicon wafer substrate below the silicon nitride and the silicon oxide thin film, the silicon nitride and the silicon oxide thin film are suspended, and a micro hot plate having an excellent heat insulating function is obtained. However, currently, the resistance heating membranes produced by the physical vapor deposition adopted by micro hot plates are generally platinum, tungsten, molybdenum or polycrystalline silicon with a thickness of several hundred nanometers. Due to the small thickness of the material and the small size of the deposited crystal grains, the heating resistance generally changes irreversibly when subjected to high temperature heat treatment (600 ° C. or higher), and after high temperature treatment, surface oxidation occurs. Generally, not only the gold wire ball bonding process is performed, but also the resistance changes when heated to a certain high temperature (600 ° C or higher). For example, a catalyst combustion gas sensor using a silicon-based micro hot plate is a sensor. When exposed to high concentrations of flammable gas, the flammable gas promotes combustion heat dissipation, so the temperature of the micro hot plate can reach 700 ° C to 800 ° C, and the micro hot plate cannot withstand the temperature. , The certainty of the micro hot plate becomes one problem, and thus the environment in which the micro hot plate is used is restricted, and the robustness of the product is challenged. Further, since the adopted silicon dioxide material still has a high thermal conductivity (7 W / m · K), it is disadvantageous for further reducing the power consumption of the micro hot plate. Moreover, the silicon nitride thin film, the silicon dioxide thin film, and the resistance heating film are all manufactured by using a chemical or physical vapor phase deposition process, and the necessary equipment is expensive, the cost of the manufacturing process is high, and the cost of the micro hot plate is high. It is disadvantageous for further reduction.

As can be seen from the above description, in the prior art, the micro hot plate mainly has the following problems, that is, the high temperature resistance of the resistance heating film formed from the physical vapor phase deposition is inferior, so that the stability of the product is poor. And less certainty, and because the silicon dioxide film has high thermal conductivity and fast heat dissipation, it requires a large input power to maintain a given working temperature, and the power consumption of the micro hot plate. At the same time, the physical vapor deposition equipment and the chemical vapor deposition equipment are expensive, so that the manufacturing cost is high, which is disadvantageous for further reduction of the cost of the micro hot plate.

In order to solve the above problems, the technical proposal of the present invention provides a ceramic-based micro hot plate having excellent stability and certainty, a simple manufacturing process, low manufacturing cost, and low heating power consumption. offer.

In order to achieve the above object, the present invention provides the following technical proposals.
Ceramic-based micro hot plate
A silicon substrate having a first surface and a second surface facing each other, the first surface having a central heating region and a peripheral support region, and the central heating region covering the first surface and the second surface. A silicon substrate with an air insulation chamber that penetrates,
A ceramic film provided on the first surface of the silicon substrate and
A heating layer provided on the surface of the ceramic film on the side separated from the silicon substrate and having a heating electrode electrically connected and a heating resistance, wherein the heating resistance is a heating layer in the central heating region. , Equipped with
The ceramic film is formed by sintering from a predetermined ceramic slurry formed on the surface of the silicon substrate, and the heating layer is sintered from a predetermined conductive slurry formed on the surface of the ceramic film. Is formed by.

Preferably, in the ceramic-based microhot plate, the silicon substrate is a single crystal silicon wafer that has not been double-sided, single-sided, or oxidized, and the single crystal silicon wafer has a crystal orientation of 100 or 111.
Alternatively, the silicon substrate is a polycrystalline silicon wafer that is double-sided oxidized, single-sided oxidized, or not oxidized.

Preferably, in the ceramic-based micro hot plate, the thickness of the silicon substrate is 50 μm to 700 μm, including the endpoint values.

Preferably, in the ceramic-based micro hot plate, the ceramic slurry is a glass-ceramic-based mixed material.
Alternatively, the ceramic slurry is a microcrystalline glass-based material.
Alternatively, the ceramic slurry is a single-phase ceramic.

Preferably, in the ceramic-based microhot plate, the thickness of the ceramic film is 1 μm to 50 μm so as to include the endpoint values.

Preferably, in the ceramic-based micro hot plate, the resistivity of the ceramic film is greater than 10 ¹³ Ω · cm.

Preferably, in the ceramic-based micro hot plate, the coefficient of thermal expansion of the ceramic film is 0.5 × ^10-6 / ° C to 10 × ^10-6 / ° C so as to include the endpoint value.

Preferably, in the ceramic-based microhot plate, the permittivity of the ceramic film is 3 to 10 so as to include the endpoint value.

Preferably, in the ceramic-based micro hot plate, the thermal conductivity of the ceramic film is 0.5 W / (m · K) to 10 W / (m · K) so as to include the endpoint value.

Preferably, in the ceramic-based micro hot plate, the stress of the ceramic film is 100 MPa to 1000 MPa so as to include the endpoint value.

Preferably, in the ceramic-based micro hot plate, the ceramic film is polished so that the roughness of the ceramic film is 0.5 nm-1 μm so as to include the endpoint value.

Preferably, in the ceramic-based microhot plate, the ceramic film covers all or part of the first surface.

Preferably, in the ceramic-based micro hot plate, the ceramic-based micro hot plate has a ceramic slurry and the multilayer ceramic film having different thicknesses.

Preferably, in the ceramic-based microhot plate, when the ceramic slurry is a mixed material of glass and ceramic, in the ceramic slurry, the ceramic phase material is aluminum oxide ceramic, magnesium oxide ceramic, beryllium oxide ceramic, zirconium oxide ceramic. , Aluminum nitride ceramic, silicon nitride ceramic, boron nitride ceramic, titanium nitride ceramic, silicon carbide ceramic, titanium carbide ceramic, boron carbide ceramic, and the glass phase material is mainly made of various inorganic minerals. It is an amorphous solid having an irregular structure produced by adding an auxiliary raw material, and the crystal grains of the ceramic phase material are melted in an amorphous mesh of the glass phase material to form the ceramic film.

Preferably, in the ceramic-based micro hot plate, when the ceramic slurry is a microcrystalline glass system, in the ceramic slurry, the microcrystalline glass is formed by heat treatment from the base glass, and the crystal orientation and crystal orientation. It is a solid composite material having a glass phase at the same time.
The base glass has a plurality of sets of oxides, and under predetermined conditions, a part of the base glass is formed so as to be regularly arranged, and a microcrystalline glass phase is formed in the glass phase.

Preferably, in the ceramic-based microhot plate, the base glass is one of silicate glass, aluminosilicate glass, borate glass, borosilicate glass, fluorosilicate glass, and phosphosilicate glass. Or have more than one.

Preferably, in the ceramic-based micro hot plate, in the ceramic slurry, the microcrystalline glass phase is MgO-Al ₂ O ₃ -SiO ₂ cozierite-based, Li ₂ O-Al ₂ O ₃ -SiO ₂ lysia pyrophyllite-based, Li ₂ O-ZnO-Al ₂ O ₃ -SiO ₂ Lithia bright stone system, BaO-Al _{2 O 3-SiO 2 Celsian system, BaO-Al 2 O 3 - SiO 2 -} TiO ₂ Celsian system, CaO-Al ₂ O ₃ -SiO ₂ ash long stone system, CaO-B ₂ O ₃ -SiO ₂ calcium boron kei glass system, Li ₂ O-ZnO-MgO-Al ₂ O ₃ -SiO ₂ β quartz system, FK ₂ O-Na ₂ O-CaO -SiO ₂ canasite system, FX-MgO-SiO ₂ fluorine angle flash stone system, FX-MgO-Al ₂ O ₃ -SiO ₂ fluorine mica system, P ₂ O ₅ -Li ₂ O-SiO ₂ lithium silicate Have one or more of the systems.

Preferably, in the ceramic-based microhot plate, when the ceramic slurry is a single-phase ceramic, in the ceramic slurry, the single-phase ceramic is barium barium borate ceramic or zirconium borate ceramic.

Preferably, in the ceramic-based microhot plate, the thickness of the heating electrode is 0.5 um to 50 um, as including the endpoint values.
The material of the heating electrode is any one of Pt, Au, Ag, Cu, Al, Ni, W, Ag / Pd alloy and Pt / Au alloy.

Preferably, in the ceramic-based microhot plate, the thickness of the heating resistance is 0.5 um to 50 um, as including the endpoint values.
The heating resistance is a resistance wiring having a predetermined shape formed by the patterning process of the conductive film layer.
The materials for the heating resistance are Pt, Au, Ag, Cu, Al, Ni, W, Mo, Ni / Cr alloy, Mo / Mn alloy, Cu / Zn alloy, Ag / Pd alloy, Pt / Au alloy, Fe /. It is any one of Co alloy, RuO ₂ and SnO ₂ : Sb ₂ O ₃ .

The present invention further provides a method for manufacturing a ceramic-based micro hot plate for manufacturing the ceramic-based micro hot plate according to any one of the above.
A step of providing a silicon substrate having a first surface and a second surface facing each other, wherein the first surface has a central heating region and a peripheral support region.
A step of forming a film layer of a predetermined ceramic slurry on the first surface,
A step of forming a ceramic film attached to the first surface through a drying step and a sintering step in order, and a step of forming the ceramic film.
A step of forming a conductive film layer of a predetermined conductive slurry on the surface of the ceramic film,
A step of forming a heating layer attached to the surface of the ceramic film through a drying step and a sintering step in order, and a step of forming a heating layer.
It is characterized by having a step of etching the second surface to form an air insulating chamber penetrating the first surface and the second surface so as to correspond to the central heating region.

Preferably, in the above-mentioned production method, the process temperature at the time of drying is 40 ° C. to 200 ° C. so as to include the endpoint value.
The process temperature at the time of sintering is 500 ° C. to 1400 ° C. so as to include the endpoint value.

As can be seen from the above description, in the ceramic-based microhot plate and the manufacturing method thereof provided by the technical proposal of the present invention, a ceramic film and a heating layer are sequentially formed on the first surface of the silicon substrate, and the ceramic film is predetermined. The ceramic film is formed by sintering from the ceramic slurry of the above, and the heating layer is formed by sintering from a predetermined conductive slurry. Thus, both the ceramic film and the heating layer are from the high temperature sintering step. Since it is formed and has an excellent high temperature resistance function, the heating layer formed from the high temperature sintering process has better high temperature resistance than the prior art of the heating layer formed from the physical vapor deposition under the low temperature process conditions. And can improve stability and certainty. Then, by adjusting the composition of the ceramic slurry, the thermal conductivity of the ceramic film can be adjusted, the problem of rapid heat dissipation is avoided, and the power consumption of heating is reduced. At the same time, the equipment on which the ceramic film and the heating layer are formed by sintering from the corresponding slurry has a lower equipment cost and a lower manufacturing cost than the equipment for chemical vapor phase deposition and physical vapor phase deposition. Let me.

In order to more clearly explain an embodiment of the present invention or a technical proposal of the prior art, the following briefly introduces the drawings necessary for describing the examples or the prior art, and clearly, the drawings described below are the present invention. It is only an embodiment of the above, and other drawings can be obtained according to the provided drawings on the premise that the person skilled in the art does not perform labor worthy of inventive step.
It is a block diagram of the ceramic base micro hot plate provided by the Example of this invention. It is a top view of the ceramic film micro hot plate provided by the Example of this invention. It is a structural schematic diagram of the other ceramic film micro hot plate provided by the Example of this invention. It is a structural schematic diagram of the heating layer provided by the Example of this invention. It is a flow schematic diagram of the manufacturing method provided by the Example of this invention. It is a top view of the ceramic base micro hot plate provided by the Example of this invention. It is a flow schematic diagram of the other manufacturing method provided by the Example of this invention.

The following, in combination with the drawings of the embodiments of the present invention, clearly and completely describes the technical proposals of the embodiments of the present invention, and clearly the described embodiments are not all the examples but one of the present inventions. It is only an embodiment of the part. Based on the embodiments of the present invention, all other embodiments acquired by those skilled in the art on the premise that they do not work worthy of inventive step belong to the scope of protection of the present invention.

As described in the prior art, a conventional micro hot plate forms a silicon nitride thin film and a silicon dioxide thin film in order on one side surface of a silicon wafer substrate via chemical vapor deposition, and then a surface of silicon dioxide. Then, a resistance heating film is formed through physical vapor deposition.

Due to the low temperature of the physical vapor deposition process and the poor high temperature resistance of the formed resistance heating film, the micro hot plate has a high temperature when used in the subsequent gold wire ball bonding process or catalytic combustion gas sensor. If the high temperature resistance function of the resistance heating film is inferior, the reliability and stability of the product will be inferior, and the quality of the product will be affected.

Since silicon dioxide has high thermal conductivity, the heat dissipation rate becomes high, and thus when the micro hot plate is used for heating work, for example, in a catalytic combustion sensor, the micro hot plate heats the gas to the combustion temperature. If so, high power consumption is required to overcome heat loss due to the high heat dissipation rate, and thus the power consumption during work of the product becomes large.

At the same time, the physical gas phase deposition equipment and the chemical gas phase deposition equipment are expensive, so that the manufacturing cost of the product is high.

As the inventor discovers by studying, it is possible to combine the maturity processing technology of a silicon substrate with the excellent electrical, mechanical, and thermological properties of a ceramic substrate to produce a ceramic film on a silicon substrate. Meet the demands of our products. That is, by forming a ceramic film on a silicon substrate with a predetermined ceramic slurry, a ceramic substrate having excellent electrical, mechanical, and thermal characteristics can be formed, and the manufacturing cost is low. Then, by forming a high temperature resistant heating layer after sintering on the surface of the ceramic base with a predetermined conductive slurry, the reliability and stability of the product can be improved and the manufacturing cost can be significantly reduced.

In order to further clarify the object, features and advantages of the present invention, the present invention will be described in more detail below by combining the drawings with specific embodiments.

With reference to FIG. 1, FIG. 1 is a schematic configuration diagram of a ceramic-based microhot plate provided by an embodiment of the present invention, wherein the ceramic-based microhot plate 10 has a first surface 111 and a second surface 112 facing each other. The silicon substrate 11 has a central heating region A and a peripheral support region B, and the central heating region A penetrates the first surface and the second surface. It has a silicon substrate 11 having a chamber 15, a ceramic film 12 provided on the first surface of the silicon substrate 11, and a heating layer provided on the surface of the ceramic film 12 on the side separated from the silicon substrate 11. The heating layer has a heating electrode 13 and a heating resistance 14 that are electrically connected, and the heating resistance 14 is located in the central heating region A.

The heating electrode 13 and the heating resistance 14 may be manufactured by the same heating layer formed from the same conductive slurry. In another embodiment, both may be manufactured by different resistance slurry and electrode slurry, in which case the heating electrode 13 is a conductive pad having a certain area, and the external circuit is welded by crimping, bonding, spot welding or the like. It may be electrically connected to the heating electrode 13 via a method. The heating electrode 13 mainly provides an electric signal externally applied to the micro hot plate, the heating resistance 14 is the main heat generating element of the micro hot plate, and an external current is transmitted to the heating resistance via the heating electrode. When so, the heating resistance generates Joule heat and further provides a heat source for the micro hot plate. In order to provide the micro hot plate with a smaller heat capacity and a faster thermal response, the ceramic film in contact with the heating resistance is arranged so as to be a hanging film, and the ceramic film of the substrate 11 is contacted via the etching technique. All the silicon is etched and removed to form an air insulation chamber 15, and since the air has a low thermal conductivity, it has excellent heat insulation. The shape of the heating resistance 14 is appropriately adjusted according to the different shapes of the heating layers, but regardless of the shape, the heating electrode 13 is electrically connected to the heating resistance 14 and the heating resistance 14 is specified as necessary. Arranged in the shape of, after heating, provides a specific temperature for the work of the micro hot plate.

The ceramic film 12 is formed by sintering from a predetermined ceramic slurry formed on the surface of the silicon substrate 11, and the heating layer is baked from a predetermined conductive slurry formed on the surface of the ceramic film 12. It is formed by being tied. The heating electrode 13 provides a working voltage to the heating resistance by acquiring an electric signal input from an external circuit.

A predetermined ceramic slurry is adopted in the thick film printing process to form a ceramic film 12 on the surface of the silicon substrate 11, and after high-temperature sintering, a dense ceramic film 12 is formed, and the ceramic film 12 and the silicon substrate are formed. It can be stably and surely bonded to No. 11, has excellent bonding force, and is dense and hard.

Compared with the prior art, the ceramic film 12 and the heating layer of the ceramic-based micro hot plate 10 provided in the examples of the present invention are each produced by forming a film from a predetermined slurry and sintering it at a high temperature. .. When heated through high-temperature heat treatment or to a certain high temperature, both the heating layer and the ceramic film 12 have excellent high-temperature resistance, the resistance value of the heating resistance 14 of the heating layer is stable, and the robustness of the product is improved. Better. The ceramic film 12 has a lower thermal conductivity and a better heat insulating function, and contributes to further reduction of the power consumption of the ceramic-based micro hot plate 10. Further, the ceramic film 12 and the heating layer may be formed into a film by a thick film printing technique as a whole, and an expensive physical vapor phase deposition or chemical vapor phase deposition apparatus is not adopted, and a low cost film formation is performed. Adopting the process further contributes to the reduction of product cost.

The silicon substrate 11 is a single crystal silicon wafer that has not been double-sided oxidized, single-sided oxidized, or oxidized, and the crystal orientation of the single crystal silicon wafer is 100 or 111, providing a stable contact effect on the ceramic film 12 and the silicon substrate 11. Equip it. Alternatively, the silicon substrate is a polycrystalline silicon wafer that is double-sided oxidized, single-sided oxidized, or not oxidized. By adopting a single crystal silicon wafer or a polycrystalline silicon wafer, the ceramic film 12 and the silicon substrate 11 are provided with a stable contact effect.

The thickness of the silicon substrate 11 is 50 μm to 700 μm so as to include the endpoint value. Specifically, the thickness of the silicon substrate 11 may be 100 μm, 200 μm, 300 μm, 50 μm or 600 μm. By utilizing the silicon substrate 11 having the thickness value, the ceramic film micro hot plate 10 is guaranteed to have a thin thickness, and the ceramic film micro hot plate 10 is provided with excellent mechanical strength.

In the examples of the present application, the ceramic slurry may be a mixed material of glass and ceramic, or the ceramic slurry may be polycrystalline glass, or the ceramic slurry may be a single-phase ceramic. There may be.

When the ceramic slurry is a mixed material of glass and ceramic, the ceramic slurry contains two crystal phases, a glass phase and a ceramic phase. Ceramic phase materials are aluminum oxide ceramic, magnesium oxide ceramic, beryllium oxide ceramic, zirconium oxide ceramic, aluminum nitride ceramic, silicon nitride ceramic, boron nitride ceramic, titanium nitride ceramic, silicon carbide ceramic, titanium carbide ceramic, boron carbide ceramic. It has one or more, and the glass phase material is a variety of inorganic minerals (quartz sand, borosand, boric acid, barite, barium carbonate, limestone, potash talus, sapphire, sodium carbonate, zinc oxide, bismuth oxide, etc. It is an irregularly structured amorphous solid produced by adding auxiliary raw materials using one or more of lead oxide, copper oxide and chromium oxide as the main raw material, and has an amorphous mesh structure. Have. A small amount of auxiliary raw material is added to the main raw material, and the proportion between the main raw material and the auxiliary raw material can be set as needed. Under high temperature conditions, the crystal grains of the ceramic phase material are melted into an amorphous mesh of the glass phase material to form the ceramic film.

When the ceramic slurry is a microcrystalline glass type, in the ceramic slurry, the microcrystalline glass is formed by heat treatment from the base glass, and is a solid composite material having a crystal orientation and a glass phase at the same time. The base glass has a plurality of sets of oxides, and under predetermined conditions, a part of the base glass is formed so as to be regularly arranged, and a microcrystalline glass phase is formed in the glass phase. Specifically, the base glass has one or more of silicate glass, aluminosilicate glass, borate glass, borosilicate glass, fluorosilicate glass, and phosphate glass.

When the ceramic slurry is a microcrystalline glass type, the crystal orientation of the ceramic slurry has a microcrystalline glass phase, and the microcrystalline glass phase is preferably MgO—Al ₂ O ₃ −SiO ₂ cordierite type, Li ₂ O. -Al ₂ O ₃ -SiO ₂ Lithia bright stone system, Li ₂ O-ZnO-Al ₂ O ₃ -SiO ₂ Lithia bright stone system, BaO-Al ₂ O ₃ -SiO ₂ Celsian system, BaO-Al ₂ O ₃ -SiO ₂ -TiO ₂ Celsian, CaO-Al ₂ O ₃ -SiO ₂ Ash Nagaishi, CaO-B ₂ O ₃ -SiO ₂ Calcium boron Kay glass, Li ₂ O-ZnO-MgO-Al ₂ O ₃ -SiO ₂ β Quartz-based, F-K ₂ O-Na ₂ O-CaO-SiO ₂ canasite-based, FX-MgO-SiO ₂ fluorohorn flash-based (X is an oxide of Li, Na, K, Ca, etc.) , FX-MgO-Al ₂ O ₃ -SiO ₂ fluorine mica system (X is an alkali metal and an alkaline earth metal oxide), P ₂ O ₅ -Li ₂ O-SiO ₂ Lithium silicate system Have one or more of them.

When the ceramic slurry is a single-phase ceramic, in the ceramic slurry, the single-phase ceramic is barium borate tin ceramic or zirconium borate barium ceramic.

The thickness of the ceramic film 12 is 1 μm to 50 μm so as to include the endpoint value. Specifically, the thickness of the ceramic film 12 may be 10 μm, 20 μm, 30 μm or 40 μm. By forming the ceramic film 12 having the thickness value on the surface of the silicon substrate 11, the thickness of the ceramic film 12 is guaranteed to be thin, and the ceramic film 12 has excellent electrical, mechanical and thermological functions. To be equipped with.

The resistivity of the ceramic film 12 is larger than 10 ¹³ Ω · cm. The silicon-based ceramic film 10 described in the examples of the present invention has a large resistivity and an excellent insulating function.

The coefficient of thermal expansion of the ceramic film 12 is 0.5 × 10 ^-6 / ° C to 10 × 10 ^-6 / ° C so as to include the endpoint value. Specifically, the coefficient of thermal expansion of the ceramic film 12 may be 1 × ^10-6 / ° C, 4 × ^10-6 / ° C, 6 × ^10-6 / ° C or 8 × ^10-6 / ° C. By forming a ceramic film 12 having the value of the thermal expansion coefficient on the surface of the silicon substrate 11, the thermal expansion coefficient of the ceramic film 12 is adapted to the thermal expansion coefficient of the silicon substrate 11, and the ceramic film 12 and silicon due to a change in temperature. It is possible to avoid problems such as warpage or breakage of the ceramic film due to the difference in the width of the degree of thermal expansion from the substrate 11, and to guarantee the certainty and stability of the ceramic film micro hot plate 10.

The dielectric constant of the ceramic film 12 is 3 to 10 so as to include the endpoint value. Specifically, the dielectric constant of the ceramic film 12 may be 4, 5, 6, 7 or 9. By forming the ceramic film 12 having the value of the dielectric constant on the surface of the silicon substrate 11, the ceramic film 12 is provided with excellent electrical characteristics.

The thermal conductivity of the ceramic film 12 is 0.5 W / (m · K) -10 W / (m · K) so as to include the endpoint value. Specifically, the thermal conductivity of the ceramic film 12 is 2 W / (m · K), 4 W / (m · K), 6 W / (m · K) or 8 W / (m · K). By forming the ceramic film 12 having the value of the thermal conductivity on the surface of the silicon substrate 11, the ceramic film 12 is provided with excellent thermal characteristics, and the rate of heat conduction becomes appropriate. As described above, when the ceramic film micro hot plate 10 is applied to the micro hot plate of the catalyst combustion sensor, the catalyst combustion sensor detects gas at the optimum working temperature of the catalyst. Therefore, the technical proposal of the present application is to dissipate heat. The problem is that the activity of the catalyst is inferior because it is too fast, so heat compensation must be performed by increasing the current, and the problem that the temperature exceeds the optimum working temperature of the catalyst because the heat dissipation is too slow. Avoid, thus, the proposed technology of the present application provides the silicon-based ceramic film with suitable heat transfer rate, excellent thermal properties, and when applied to micro hot plates, the temperature is the optimum working temperature of the catalyst. To avoid the problem of too high and too low temperatures.

The stress of the ceramic film 12 is 100 MPa to 1000 MPa so as to include the endpoint value. Specifically, the stress of the ceramic film 12 is 200 Mpa, 500 Mpa, 800 Mpa or 900 Mpa. By forming the ceramic film 12 having the stress value on the surface of the silicon substrate 11, the ceramic film 12 has excellent mechanical properties and can withstand a large stress, and the ceramic film is warped or warped due to the change in stress. Avoid problems such as dropping out.

Through the polishing process, the ceramic film 12 has a roughness of 0.5 nm to 1 μm so as to include an endpoint value. Specifically, the roughness of the ceramic film 12 may be 10 nm, 100 nm, 500 nm or 800 nm. By forming the ceramic film 12 having the roughness value on the surface of the silicon substrate 11, the ceramic film 12 can be provided with excellent flatness, and other configurations can be conveniently manufactured on the surface thereof.

In the ceramic film micro hot plate provided by the examples of the present invention, the ceramic film 12 covers all or a part of the first surface. When the ceramic film 12 covers a part of the first surface, it has a plurality of regions and there is a gap between adjacent regions. By adjusting the size, quantity, and gap distance of the region partitioned by the ceramic film 12 in the first surface region so as to match the stress of the silicon substrate 11 and the stress of the ceramic film 12, the ceramic film micro Guarantee the stability and certainty of the hot plate.

With reference to FIG. 2, FIG. 2 is a plan view of the ceramic film microhot plate provided by the embodiment of the present invention, and in the form shown in the left figure of FIG. 2, the ceramic film 121 is the first of the silicon base base layer 11. The entire surface is covered, and in the form shown in the right figure of FIG. 2, the ceramic film 123 covers a part of the silicon base base layer 11, and in the form shown in the intermediate view of FIG. 2, the ceramic film 122 covers the entire surface. It covers a part of the silicon base base layer 11.

By arranging the ceramic film micro hot plate 10 so as to have the ceramic slurry and the multi-layered ceramic film 12 having different thicknesses, the matching effect between the stress of the silicon substrate 11 and the stress of the ceramic film 12 is better. This avoids the problem of warping of the ceramic-based micro hot plate.

With reference to FIG. 3, FIG. 3 is a schematic configuration diagram of another ceramic film micro hot plate provided by an embodiment of the present invention, and in the ceramic film micro hot plate 20 shown in FIG. 3, the silicon substrate 21 is similarly the same. It has a first surface and a second surface facing each other, and is the same as the silicon substrate of the above embodiment. The difference between the form shown in FIG. 3 and the form shown in FIG. 2 is that in the form shown in FIG. 3, the surface of the silicon substrate 21 has two layers of ceramic films, that is, a ceramic film 221 and a ceramic film 222. It is in. The ceramic film 221 is on the surface of the silicon substrate 21, and the ceramic film 222 is on the surface of the ceramic film 221. What we are going to explain is that the number of layers of the ceramic film can be set according to the need for stress matching, including, but not limited to, the two-layer configuration shown in FIG. A heating layer is provided on the surface of the outermost ceramic film 222, and the heating layer has a heating electrode 23 and a heating resistance 24, as in the above-described embodiment.

Preferably, the thickness of the heating electrode 13 is 0.5 um to 50 um so as to include the endpoint value, and may be, for example, 10 μm, 20 μm, or 30 μm. The material of the heating electrode 13 is any one of Pt, Au, Ag, Cu, Al, Ni, W, Ag / Pd alloy and Pt / Au alloy, and includes, but is limited to, the material. Not.

The thickness of the heating resistance 14 is 0.5 um to 50 um so as to include the endpoint value, and may be, for example, 10 μm, 20 μm, or 30 μm. The heating resistance 14 is a resistance wiring having a predetermined shape formed by the patterning process of the conductive film layer. The pattern structure of the conductive film layer is shown in FIG.

With reference to FIG. 4, FIG. 4 is a schematic configuration diagram of the heating layer provided by the embodiment of the present invention, and in FIG. 4, the heating layer shown in FIG. 4a has a heating resistance 141 and a heating electrode 131. The heating resistance 141 is an irregularly shaped curve, the heating layer shown in FIG. 4b has a heating resistance 142 and a heating electrode 132, the heating resistance 142 is a mosquito repellent incense-shaped curve, and the heating layer shown in FIG. 4c is. It has a heating resistance 143 and a heating electrode 133, the heating resistance 143 is a serpentine curve, the line width of the heating resistance 143 is uniform, and the heating layer shown in FIG. 4d has the heating resistance 144 and the heating electrode 134. The heating resistance 144 is a serpentine curve, the line width of the heating resistance 144 is not uniform, FIG. 4e has the heating resistance 144 and the heating electrode 134, and the heating resistance 144 is rectangular. The pattern configuration of the heating layer is not limited to the four forms in FIG. 4, and is not limited to one pattern configuration, and may be a combination of various pattern configurations. For example, the same heating layer may have the above-mentioned. At least two combinations of the four forms may be included.

Depending on the thermal field uniformity of the micro hot plate, the shape of the heating resistance can be changed, the line width of the heating resistance can be controlled, and the resistance value of the heating resistance can be adjusted and controlled. The width of the streaks is the same, and the resistance value of each streak is also the same. If the widths of the streaks of the heating resistance 144 are inconsistent, coarse in the middle, thin on both sides, the resistance of the streaks in the middle is less than the resistance of the streaks on both sides, and the same current passes, then from the streaks on both sides The Joule heat generated is greater than the Joule heat generated from the resistance of the intermediate streaks, and the streaks on both sides are closer to the edges of the insulation chamber, resulting in higher heat conduction, thereby the temperature of the streaks on both sides. Is lower and the thermal currents are more uniform and consistent through a variable line width design. Similarly, a variable line width design is performed for the heating resistance 142 of the mosquito coil-shaped curve.

The material of the heating resistance 14 is Pt, Au, Ag, Cu, Al, Ni, W, Mo, Ni / Cr alloy, Mo / Mn alloy, Cu / Zn alloy, Ag / Pd alloy, Pt / Au alloy, Fe /. It is any one of Co alloy, RuO ₂ and SnO ₂ : Sb ₂ O ₃ , and includes, but is not limited to, the above-mentioned materials.

In the embodiment of the present invention, the ceramic film 12 is different from the traditional ceramic film layer that realizes a strong dielectric, piezoelectric or magnetic electric coupling effect, and the ceramic film layer of the traditional ceramic film layer is a functional ceramic. It must be equipped with excellent conversion functions between force, electricity and magnetism, and the ceramic film 12 of the embodiment of the present invention is a structural ceramic, which can realize mechanical parameters such as stress strain and elastic coefficient, and is adjacent to each other. Provide reliable and stable adhesion between the ceramic layers.

Therefore, the ceramic film 12 described in the examples of the present application is a structural ceramic, the traditional ceramic film layer is a functional ceramic, and there is an essential difference, and the functional ceramic of the silicon substrate is the present application. It is different from the silicon-based ceramic film of. Functional ceramics are mainly ceramic materials that utilize their non-mechanical functions, and such ceramic materials generally have one or more functions such as electricity, magnetism, light, heat, and chemical organisms. Alternatively, it has a coupling function such as piezoelectric, magnetic, thermoelectric, electro-optical, acoustic optics, and magnetic optics. With the development of semiconductor technology, all functional ceramics are deposited on a silicon substrate in the form of a thin film, and metal electrodes are vapor-deposited, and it is the functionality of the ceramic material that is mainly researched and used. On the other hand, the ceramic film material of the embodiment of the present invention is provided with an excellent mechanical function matching the ceramic film and the silicon substrate, and does not have to have the non-mechanical properties of the traditional ceramic film.

Although there are many types of structural ceramics, in general, all structural ceramics are used independently and in a single form, and have a large size structural structure in terms of dimension. It can combine a micro-sized ceramic film and a silicon substrate that is easy to microfabricate, and is applied to the field of MEMS microheaters.

As mentioned above, based on the differences from traditional functional ceramics, the ceramic films of the embodiments of the present invention must be able to achieve specific mechanical properties and have specific stress and thermal expansion coefficients, some of which. Electrical functional parameters, such as dielectric constants, range from 3 to 10 only, while traditional functional ceramics such as piezoelectric ceramics, strong dielectric ceramics, generally have higher dielectric constants. The more the dielectric constant, the better the functionality, and the dielectric constant of the piezoelectric ceramic and the strong dielectric ceramic is generally several thousand to tens of thousands. Therefore, the technical proposal of the present invention is to select the material of the ceramic film. On the other hand, emphasis is placed on excellent mechanical properties, and the mechanical properties of the majority of functional ceramic materials do not meet the needs of the technical proposal of the present invention, and the technical proposal of the present invention is a functional ceramic having inferior mechanical properties. The ceramic film of the embodiment of the present invention, which does not contain a material, has a certain elasticity and strain when heated, and if a piezoelectric material is adopted, smart strain generates charges at both ends, so that the ceramic film must be of the ceramic film. Affects subsequent application extensions.

In the above-mentioned technical proposal of the embodiment of the present invention, a ceramic film having a desired characteristic is obtained by forming a film on the surface of a silicon substrate by a thick film printing technique using a predetermined ceramic slurry and then performing high-temperature sintering at a predetermined temperature. A ceramic film having the desired properties that can be formed has excellent resistance, thermal expansion coefficient, dielectric constant, thermal conductivity and stress characteristics, and its resistance, thermal expansion coefficient, dielectric constant, thermal conductivity and stress are It meets a predetermined numerical range, has excellent electrical, thermal and mechanical properties, and provides excellent stability and certainty for ceramic membrane microhot plates.

Compared with the prior art, in the ceramic film microhot plate provided by the embodiments of the present invention, by combining the microfabrication technology of the maturation of the silicon substrate with the excellent electrical, mechanical and thermological properties of the ceramic. A functional circuit can be formed on a ceramic film, and microstructural processing can be realized on a silicon substrate. Applies to the manufacture of microstructure systems. A ceramic film can be formed by a low-cost thick film printing process, it is not necessary to use expensive physical gas phase deposition or chemical gas phase deposition equipment, and it contributes to reduction of product cost.

A heating layer can be formed from high-temperature sintering at a predetermined temperature after forming a film on the surface of a ceramic film using a predetermined conductive slurry via a thick film printing technique. In the ceramic-based micro hot plate of the example, the high temperature resistance of the heating layer is excellent, which guarantees the stability and certainty of the product. In the heating layer, the heating resistance and the heating electrode are simultaneously manufactured by the same conductive slurry. In other embodiments, different resistance slurries and electrode slurries may be used, respectively. For example, heating resistance is produced by screen printing the resistance slurry and sintering it at a high temperature. The heated electrode is manufactured by screen-printing the electrode slurry and sintering it at a high temperature.

Based on the ceramic-based micro hot plate described in the above embodiment, another embodiment of the present invention further provides a manufacturing method for manufacturing the ceramic-based micro hot plate, the manufacturing method as shown in FIG. In addition, FIG. 5 is a schematic flow diagram of the manufacturing method provided by the embodiment of the present invention, and the manufacturing method has the following steps.
Step S11: A silicon substrate having a first surface and a second surface facing each other is provided, and the first surface has a central heating region and a peripheral support region.

Regarding the material and thickness of the silicon substrate, the above description may be referred to, and no verbosity is given here.

Step S12: A film layer of a predetermined ceramic slurry is formed on the first surface.

A ceramic slurry is produced according to the desired characteristics of the required ceramic film. The ceramic slurry consists of ceramic powder and an organic carrier. Specifically, there are three realization forms of ceramic powder: a mixed material of glass and ceramic, a microcrystalline glass-based composition, and a single-phase ceramic. Regarding the realization form of the predetermined ceramic slurry, the above description may be referred to, and no verbosity is given here.

A film may be formed on a silicon substrate by the ceramic slurry by any one of screen printing, lithographic printing, intaglio printing, letterpress printing, casting, knife coating and painting.

Step S13: A ceramic film adhered to the first surface is formed through a drying step and a sintering step in order.

Regarding the object characteristics of the ceramic film, the above description may be referred to, and no verbosity is given here. A ceramic film having a certain thickness can be formed on the surface of a silicon substrate by high-temperature sintering at a predetermined temperature, and the ceramic film is dense and hard, and has excellent adhesion to the silicon substrate.

Preferably, the drying temperature is 40 ° C. to 200 ° C., for example, 50 ° C., 80 ° C., 100 ° C. or 150 ° C. Drying at that temperature value can be guaranteed to have a good drying effect, and too high or too low a temperature will result in poor drying quality of the membrane layer, which will affect subsequent sintering quality. It can be avoided and the certainty and stability of the ceramic film can be guaranteed.

Preferably, the temperature during sintering is 500 ° C. to 1400 ° C., including the endpoint values, and may be, for example, 550 ° C., 800 ° C., 1000 ° C. or 1200 ° C. By sintering at the temperature value, it can be guaranteed to have an excellent sintering effect, the ceramic film is dense, the hardness characteristics are good, the adhesive force with the silicon base plate is strong, and the temperature is too high. It avoids inferior sintering of the film layer due to being too low, and guarantees the certainty and stability of the ceramic film. A predetermined slurry is formed on the surface of a silicon substrate through a thick film printing process, and after sintering, a ceramic film having a large thickness, fineness and excellent adhesive strength can be formed, and the ceramic film and the silicon substrate can be formed. The contact surfaces are in stable contact with each other, and the contact configuration between the two is different, the contact configuration is more reliable and stable, and the manufacturing cost is lower than that of expensive physical vapor deposition or chemical vapor deposition equipment. ..

After sintering, the manufacturing method further comprises a step of increasing the roughness of the ceramic film to 0.5 nm to 1 μm, including the endpoint values, via a polishing and polishing step.

Step S14: A conductive film layer of a predetermined conductive slurry is formed on the surface of the ceramic film.

Step S15: A heating layer adhered to the surface of the ceramic film is formed through a drying step and a sintering step in order.

A conductive film layer of the conductive slurry is formed on the surface of the ceramic film through the screen printing process, and a heated layer having excellent adhesion to the ceramic film can be obtained through the drying and sintering steps. The temperature range for drying and sintering is the same as described above. The drying temperature of the ceramic film and the heating layer may be the same or different, and the sintering temperature may be the same or different. In this step, after the sintering is completed, the roughness of the heating layer becomes 0.5 nm to 1 μm through the polishing and polishing step as well, so as to include the endpoint value. By setting the screen printing netting pattern, the heating layer is provided with a predetermined pattern configuration, and a heating resistance and a heating electrode having a specific configuration are formed.

Step S16: The second surface is etched to form an air insulation chamber penetrating the first surface and the second surface so as to correspond to the central heating region.

The air insulation chamber may be formed by a deep silicon etching step. Specifically, a predetermined photoresist layer is formed on the second surface, the photoresist layer is formed by a spin coating step, and the photoresist layer is subjected to patterning exposure and patterning development. A photoresist layer having a pattern structure is formed, the photoresist facing the surrounding support region is retained, the photoresist facing the central heating region is removed, and the patterning photoresist layer is used as a mask plate to form a silicon substrate. By etching to form the air insulation chamber, the ceramic film in the central heating region is suspended, and finally, the photoresist in the edge support region is removed, and a ceramic-based micro hot plate having excellent heat insulation function is obtained. Form. The photoresist may be a positive photoresist or a negative photoresist. The thickness of the photoresist layer is 1 μm to 30 μm so as to include the endpoint value.

With reference to FIG. 6, FIG. 6 is a plan view of the ceramic-based microhot plate provided by the embodiments of the present invention, wherein the manufacturing method according to the embodiments of the present invention involves a plurality of ceramics via a large size wafer. The base micro hot plate is manufactured simultaneously and divided into a plurality of single particle ceramic base micro hot plates through a cutting step, and after cutting, each ceramic micro hot plate is made of a silicon substrate 11, a ceramic film 12 and a ceramic film 12. It has a heating layer. As shown in FIG. 6, a ceramic film 12 is formed on the wafer. The heating layer pattern in the ceramic film 12 has a plurality of sub-regions, each of which has a heating electrode 13 and a heating resistance 14. Correspondingly, after forming an air insulation chamber in the central heating region of each sub-region, a large-sized wafer is divided into a plurality of small-sized silicon substrates 11 through a cutting process, and each small-sized silicon substrate is divided. Each of 11 corresponds to one subregion and forms one single particle ceramic-based microhot plate.

With reference to FIG. 7, FIG. 7 is a schematic flow diagram of another manufacturing method provided by an embodiment of the present invention, wherein the manufacturing method has the following steps.
Step S21: The silicon substrate is provided and cleaned.

The silicon substrate is double-sided oxidized and may be a single crystal silicon substrate 11 having 100 crystal orientations, washed with acetone ultrasonic waves for 10 minutes, washed with isopropanol ultrasonic waves for 5 minutes, and washed with deionized water for 5 minutes. Then, blow it dry with nitrogen gas.

Step S22: A ceramic slurry is arranged, a film is formed on the surface of the silicon substrate by the slurry, and then a drying process is performed.

Ceramic powders with appropriate specifications are selected and arranged to form a ceramic slurry by adding an organic carrier. It is printed on the substrate 11 by a method called screen printing and dried at a constant temperature.

Step S23: The dried silicon substrate is placed in a muffle furnace and sintered to form a ceramic film.

The surface roughness of the ceramic film 12 is controlled to 0.2 um by obtaining a dense and hard ceramic film 12 having a thickness of 10 um and treating the surface of the ceramic film 12 by a method of polishing and polishing.

Step S24: The conductive slurry forms a pattern structure of the heating electrode and the heating resistance on the surface of the ceramic film through the screen printing step.

The same conductive slurry is used for the heating electrode and heating resistance to form the corresponding pattern configuration through a single screen printing. In another embodiment, the heating electrode slurry and the heating resistance slurry are printed on the ceramic film by a method called screen printing, respectively, to form the corresponding heating electrode pattern configuration and heating resistance pattern configuration.

After the screen printing is completed, drying and sintering are performed to obtain a heating electrode and heating resistance, and the heating electrode and heating resistance are polished to perform a polishing treatment on the surface of the heating electrode and heating resistance. The roughness becomes 100 nm.

Step S25: The other side of the silicon substrate is etched to form an air insulation chamber in the central heating region facing the heating resistance.

The back surface of the substrate is spin-coated with a photoresist, dried in a heating stage, and subjected to patterning exposure and patterning development to remove silicon dioxide on the back surface by reactive ion etching technology, and deep silicon etching technology. , The silicon under the ceramic film, which is not protected by the photoresist, is etched and removed to form an adiabatic air cavity 15 to obtain a ceramic-based micro hot plate, and a cutting technique is used to obtain a ceramic-based micro hot plate chip.

In the prior art, the material for producing the ceramic film layer has a high sintering temperature, for example, for a zirconium oxide ceramic material, the sintering temperature is required to be 1350 ° C. or higher, and the baking temperature is high. The forming temperature cannot use the silicon wafer as a substrate, because the silicon wafer cannot withstand such a high sintering temperature, and the sintering temperature already approaches the melting point (1400 ° C.) of the silicon wafer. The stress of the ceramic film layer manufactured from the traditional ceramic material cannot be matched with the silicon wafer (the total stress is 500 MPa or less). At the same time, the ceramic film layer manufactured from the traditional ceramic material cannot form a dense ceramic film, and if a subsequent deep silicon etching process is adopted, the ceramic substrate may break.

In the embodiment of the present invention, the silicon-based ceramic film formed from a specific ceramic slurry has excellent mechanical properties, has an excellent adhesion effect with a silicon substrate, and is a material for producing a ceramic film. The sintering temperature is lower than the melting point temperature of the silicon wafer. For example, the sintering temperature is 1200 ° C. or lower for a mixed material of glass and ceramic, which is suitable for printing sintering on a silicon wafer and is a ceramic slurry. By adjusting the composition and shield of the ceramic film, the thermal expansion coefficient of the manufactured ceramic film matches the silicon wafer, forming a reliable mechanical contact, and avoiding the problem of warpage and falling off due to thermal strain.

To better illustrate the invention, the following provide specific examples of how to make some ceramic-based microhot plates.

Example 1
A 4-inch single-crystal silicon wafer that is double-sided polished, double-sided oxidized, and has 100 crystal orientations is provided, washed with acetone ultrasound for 15 min, washed with isopropanol ultrasonic for 5 min, and washed with deionized water for 5 min, nitrogen gas. Blow dry with, select a ceramic powder with appropriate specifications, add an organic carrier, arrange it so that it becomes a ceramic slurry, print it on a wafer by a method called screen printing, dry it at 120 ° C for 10 minutes, and dry it. The wafer is placed in a muffle furnace and sintered at 1000 ° C for 30 minutes to obtain a dense and hard ceramic film with a thickness of 10 um, and the surface of the ceramic film is treated by a method called polishing and polishing to make ceramic. The roughness of the surface of the film is controlled to be 0.2 um.

A serpentine heating resistance array and a heating electrode array with a length and width of 300um × 300um are printed on a ceramic film by a method called screen printing, dried at 120 ° C for 5 min, sintered at 850 ° C for 15 min, and heated electrodes. By obtaining the heating resistance and polishing the heating electrode and the heating resistance, the surface roughness of the heating electrode and the heating resistance becomes 100 nm, and the positive photoresist is spun on the back surface of the substrate. It was coated, dried at 100 ° C. for 5 min, and subjected to patterning exposure and patterning development to obtain a region of 10 um in thickness, 500 um x 500 um in length and width, not protected by a photoresist, and reactive ions. A technique called etching removes silicon dioxide in unprotected areas, and a deep silicon etching technique etches and removes silicon that is not protected by a photoresist to form an adiabatic air cavity to obtain a ceramic-based microhot plate. A ceramic-based microhot plate chip having a length and width of 1.0 mm × 1.0 mm is obtained by a cutting technique.

Example 2
A 6-inch single-crystal silicon wafer that is double-sided polished, non-oxidized, and has a 100 crystal orientation is provided, washed with acetone ultrasound for 10 min, isopropanol ultrasonically for 10 min, and washed with deionized water for 5 min. Blow dry with nitrogen gas, select a ceramic powder with appropriate specifications, add an organic carrier, place the ceramic slurry, deposit the ceramic slurry on the wafer by a method called casting, and dry it at 150 ° C for 10 minutes. The dried wafer is placed in a muffle furnace and sintered at 1000 ° C. for 30 minutes to obtain a dense and hard ceramic film having a thickness of 20 um, and the surface of the ceramic film is treated by a method called polishing and polishing. By doing so, the roughness of the surface of the ceramic film is controlled to be 0.2 um.

A variable line width serpentine heating resistance array and a heating electrode array with a length and width of 400 um x 400 um are printed on a ceramic film by a method called screen printing, dried at 130 ° C for 5 min, and sintered at 900 ° C for 30 min. By obtaining the heating electrode and the heating resistance and performing a polishing treatment on the heating electrode and the heating resistance, the surface roughness of the heating electrode and the heating resistance becomes 50 nm, and a positive photoresist is formed on the back surface of the substrate. Spin-coated, dried at 100 ° C. for 5 min, patterned exposure and patterning development to obtain a photoresist-unprotected region of 15 um thickness, 500 um x 500 um length and width, reactive. Ion etching technology removes silicon dioxide in unprotected areas, and deep silicon etching technology etches and removes silicon that is not protected by photoresists to form adiabatic air cavities and ceramic-based microhot plates. To obtain a ceramic-based microhot plate chip having a length and width of 1.0 mm × 1.0 mm by a cutting technique.

Example 3
A 2-inch single-ceramic silicon wafer that is double-sided polished, single-sided oxidized, and has a 100 crystal orientation is provided, washed with acetone ultrasound for 10 min, with isopropanol ultrasound for 10 min, and washed with deionized water for 5 min. Blow dry with nitrogen gas, select a ceramic powder with appropriate specifications, add an organic carrier, arrange it so that it becomes a ceramic slurry, and apply a knife to form the ceramic slurry on the unoxidized side of the wafer. A method of filming, drying at 100 ° C for 10 min, placing the dried wafer in a muffle furnace, sintering at 1200 ° C for 30 min, obtaining a dense and hard ceramic film with a thickness of 6 um, and polishing and polishing. By treating the surface of the ceramic film, the roughness of the surface of the ceramic film is controlled to be 0.1 um.

A mosquito-scent-shaped heating resistance array and a heating electrode array with a length and width of 500um × 500um are printed on a ceramic film by a method called screen printing, dried at 150 ° C for 5 min, sintered at 1000 ° C for 10 min, and heated electrodes. By obtaining the heating resistance and polishing the heating electrode and the heating resistance, the surface roughness of the heating electrode and the heating resistance becomes 10 nm, and a negative photoresist is spun on the back surface of the substrate. It was coated, dried at 150 ° C. for 5 min, and subjected to patterning exposure and patterning development to obtain a region of 25 um in thickness, 700 um x 700 um in length and width, not protected by a photoresist, and reactive ions. Etching technology removes silicon dioxide in unprotected areas, and deep silicon etching technology etches and removes silicon that is not protected by photoresists to form insulated air cavities and create ceramic-based microhot plates. The cutting technique is used to obtain a ceramic-based microhot plate chip having a length and width of 1.0 mm × 1.0 mm.

Example 4
An 8-inch single-crystal silicon wafer that is double-sided polished, double-sided oxidized, and has 100 crystal orientations is provided, washed with acetone ultrasound for 10 min, isopropanol ultrasound for 5 min, and deionized water for 5 min. Blow dry with nitrogen gas, select a ceramic powder with appropriate specifications, add an organic carrier, arrange it so that it becomes a ceramic slurry, and form a ceramic slurry on a wafer by a method called screen printing, and at 150 ° C. After drying for 10 min, the dried wafer is placed in a muffle furnace and sintered at 1200 ° C. for 60 min to obtain a dense and hard ceramic film with a thickness of 8 um, and the surface of the ceramic film is polished and polished. By treating the above, the roughness of the surface of the ceramic film is controlled to 0.5 um.

By a method called screen printing, an irregularly shaped heating resistance array and heating electrode array with a length and width of 500um × 500um are printed on a ceramic film, dried at 150 ° C for 5 min, sintered at 1100 ° C for 10 min, and heated electrodes. By obtaining the heating resistance and polishing the heating electrode and the heating resistance, the surface roughness of the heating electrode and the heating resistance becomes 100 nm, and the positive photoresist is spun on the back surface of the substrate. It was coated, dried at 150 ° C. for 5 min, and subjected to patterning exposure and patterning development to obtain a region of 10 um in thickness, 800 um × 800 um in length and width, not protected by a photoresist, and was reactive. Ion etching technology removes silicon dioxide in unprotected areas, and deep silicon etching technology etches and removes silicon that is not protected by photoresists to form adiabatic air cavities and ceramic-based microhot plates. To obtain a ceramic-based microhot plate chip having a length and width of 1.5 mm × 1.5 mm by a cutting technique.

Example 5
A 12-inch single-crystal silicon wafer that is double-sided polished, non-oxidized, and has a 100 crystal orientation is provided, washed with acetone ultrasound for 10 min, with isopropanol ultrasonic for 5 min, and washed with deionized water for 5 min. It is blown dry with nitrogen gas, a ceramic powder with appropriate specifications is selected, an organic carrier is added, a ceramic slurry is placed, and it is divided into four quadrant regions spaced apart from each other around the center of the wafer circle, and is a concave plate. A ceramic slurry is formed on a wafer by a method called printing, dried at 150 ° C. for 10 min, and the dried wafer is placed in a muffle furnace and sintered at 1300 ° C. for 20 min. By obtaining a hard ceramic film and treating the surface of the ceramic film by a method called polishing and polishing, the roughness of the surface of the ceramic film is controlled to 0.5 um.

A square heating resistance array and a heating electrode array with a length and width of 300um × 300um are printed on a ceramic film by a method called screen printing, dried at 130 ° C for 5 min, sintered at 800 ° C for 60 min, and used as a heating electrode. By obtaining the heating resistance and performing a polishing treatment on the heating electrode and the heating resistance, the surface roughness of the heating electrode and the heating resistance becomes 100 nm, and the back surface of the substrate is spin-coated with a positive photoresist. Drying at 150 ° C. for 5 min, patterning exposure and patterning development were performed to obtain a region having a thickness of 12 um and a length and width of 600 um × 600 um, which was not protected by a photoresist, and a reactive ion etching technique. By removing silicon dioxide in unprotected areas and etching unprotected silicon by photoresist by deep silicon etching technology, an insulating air cavity is formed and a ceramic-based microhot plate is obtained. The cutting technique yields a ceramic-based microhot plate chip measuring 1.5 mm × 1.5 mm in length and width.

Example 6
A 10-inch single-crystal silicon wafer that is double-sided polished, double-sided oxidized, and has a 111 crystal orientation is provided, washed with acetone ultrasound for 10 min, with isopropanol ultrasonic for 5 min, and washed with deionized water for 5 min. It is blown dry with nitrogen gas, a ceramic powder with appropriate specifications is selected, an organic carrier is added, and the ceramic slurry is arranged so as to form a ceramic slurry. The ceramic slurry is formed on a wafer by a method called screen printing, dried at 150 ° C for 10 min, and the dried wafer is placed in a muffle furnace and sintered at 1100 ° C for 20 min to have a thickness of 15 um. Then, a dense and hard ceramic film is obtained, and the surface of the ceramic film is treated by a method called polishing and polishing to control the roughness of the surface of the ceramic film to 0.8 um.

A rectangular heating resistance array and heating electrode array with a length and width of 500um x 400um are printed on a ceramic film by a method called screen printing, dried at 150 ° C for 5 min, sintered at 850 ° C for 60 min, and used as a heating electrode. By obtaining the heating resistance and polishing the heating electrode and the heating resistance, the surface roughness of the heating electrode and the heating resistance becomes 100 nm, and the positive photoresist is spin-coated on the back surface of the substrate. Then, it was dried at 150 ° C. for 5 min, and subjected to patterning exposure and patterning development to obtain a region having a thickness of 8 um, a length and a width of 600 um × 600 um, and not protected by a photoresist, and reactive ions were obtained. Etching technology removes silicon dioxide in unprotected areas, and deep silicon etching technology etches and removes silicon that is not protected by photoresists to form insulated air cavities and create ceramic-based microhot plates. The cutting technique is used to obtain a ceramic-based microhot plate chip having a length and width of 1.2 mm × 1.2 mm.

As can be seen from the above description, the manufacturing method described in the embodiment of the present invention is applied to the manufacturing of the ceramic-based microhot plate described in the above embodiment, and expensive physical vapor deposition equipment and chemical vapor deposition equipment are used. It is not necessary, the ceramic film and the heating layer can be formed through the low cost thick film printing process, the drying process and the sintering process, the manufacturing cost is low, the high temperature resistant heating layer can be formed, the stability of the product and the product stability. Improve certainty.

Each embodiment of the specification is described in a gradual manner, each embodiment primarily illustrating differences from other embodiments, with respect to similar or similar parts between the respective embodiments. You can refer to each other. For the manufacturing method disclosed in the examples, the description is relatively simple because it corresponds to the ceramic-based micro hot plate disclosed in the examples. Just do it.

Those skilled in the art can realize or utilize the present invention by the above description with respect to the disclosed examples. Various amendments to these embodiments are self-evident to those of skill in the art, and the general principles defined herein may be realized in other embodiments without departing from the spirit or scope of the invention. can. Accordingly, the invention is not limited to these embodiments disclosed herein, but fits the broadest scope consistent with the principles and novel features disclosed herein.

Claims (22)

The ceramic-based micro hot plate
A silicon substrate having a first surface and a second surface facing each other, the first surface having a central heating region and a peripheral support region, and the central heating region covering the first surface and the second surface. A silicon substrate with an air insulation chamber that penetrates,
A ceramic film provided on the first surface of the silicon substrate and
A heating layer provided on the surface of the ceramic film on the side separated from the silicon substrate and having a heating electrode electrically connected and a heating resistance, wherein the heating resistance is a heating layer in the central heating region. , Equipped with
The ceramic film is formed by sintering from a predetermined ceramic slurry formed on the surface of the silicon substrate, and the heating layer is sintered from a predetermined conductive slurry formed on the surface of the ceramic film. A ceramic-based micro hot plate characterized by being formed in. The silicon substrate is a single crystal silicon wafer that is double-sided oxidized, single-sided oxidized, or not oxidized, and the crystal orientation of the single crystal silicon wafer is 100 or 111.
The ceramic-based micro hot plate according to claim 1, wherein the silicon substrate is a polycrystalline silicon wafer that is double-sided oxidized, single-sided oxidized, or not oxidized. The ceramic-based micro hot plate according to claim 1, wherein the thickness of the silicon substrate is 50 μm to 700 μm so as to include the endpoint value. The ceramic slurry is a glass-ceramic-based mixed material.
Alternatively, the ceramic slurry is a microcrystalline glass-based material.
The ceramic-based micro hot plate according to claim 1, wherein the ceramic slurry is a single-phase ceramic. The ceramic-based micro hot plate according to claim 1, wherein the thickness of the ceramic film is 1 μm to 50 μm so as to include an endpoint value. The ceramic-based micro hot plate according to claim 1, wherein the resistivity of the ceramic film is larger than 10 ¹³ Ω · cm. The ceramic according to claim 1, wherein the coefficient of thermal expansion of the ceramic film is 0.5 × 10 ^-6 / ° C to 10 × 10 ^-6 / ° C so as to include the endpoint value. Base micro hot plate. The ceramic-based micro hot plate according to claim 1, wherein the ceramic film has a dielectric constant of 3 to 10 so as to include an endpoint value. The ceramic according to claim 1, wherein the ceramic film has a thermal conductivity of 0.5 W / (m · K) to 10 W / (m · K) so as to include an endpoint value. Base micro hot plate. The ceramic-based micro hot plate according to claim 1, wherein the stress of the ceramic film is 100 MPa to 1000 MPa so as to include the endpoint value. The ceramic-based micro hot plate according to claim 1, wherein the ceramic film is polished so that the roughness of the ceramic film is 0.5 nm to 1 μm so as to include an end point value. The ceramic-based micro hot plate according to claim 1, wherein the ceramic film covers all or a part of the first surface. The ceramic-based micro hot plate according to claim 1, wherein the ceramic-based micro hot plate has a ceramic slurry and a multilayer of ceramic films having different thicknesses. When the ceramic slurry is a mixed material of glass and ceramic, in the ceramic slurry, the ceramic phase material is aluminum oxide ceramic, magnesium oxide ceramic, beryllium oxide ceramic, zirconium oxide ceramic, aluminum nitride ceramic, silicon nitride ceramic, boron nitride. It has one or more of ceramic, titanium nitride ceramic, silicon carbide ceramic, titanium carbide ceramic, and boron carbide ceramic, and the glass phase material is manufactured by using various inorganic minerals as the main raw material and adding auxiliary raw materials. The ceramic base according to claim 4, wherein the ceramic base is an amorphous solid having an irregular structure, and the crystal grains of the ceramic phase material are melted in an amorphous mesh of the glass phase material to form the ceramic film. Micro hot plate. When the ceramic slurry is a microcrystalline glass type, in the ceramic slurry, the microcrystalline glass is formed by heat treatment from the base glass, and is a solid composite material having a crystal orientation and a glass phase at the same time.
The base glass has a plurality of sets of oxides, and under predetermined conditions, a part of the base glass is formed so as to be regularly arranged, and a microcrystalline glass phase is formed in the glass phase. The ceramic-based micro hot plate according to claim 4. The claim is characterized in that the base glass has one or more of a silicate glass, an aluminosilicate glass, a borate glass, a borosilicate glass, a fluorosilicate glass, and a phosphate glass. 15. The ceramic-based microhot plate according to 15. In the ceramic slurry, the microcrystalline glass phase is MgO-Al ₂ O ₃ -SiO ₂ cordierite type, Li ₂ O-Al ₂ O ₃ -SiO ₂ lysia pyrophyllate type, Li ₂ O-ZnO-Al ₂ O ₃ -SiO ₂ Lithia bright stone system, BaO-Al _{2 O 3-SiO 2 celsian system, BaO-Al 2 O 3 -SiO 2 - TiO 2} celsian system, CaO-Al ₂ O ₃ -SiO ₂ ash long stone system, CaO-B ₂ O ₃ -SiO ₂ Calcium Boronkei Glass-based, Li ₂ O-ZnO-MgO-Al ₂ O ₃ -SiO ₂ β-Ceramic, FK ₂ O-Na ₂ O-CaO-SiO ₂ Canasite, FX- One or more of MgO-SiO ₂ fluorine horn flash, FX-MgO-Al ₂ O ₃ -SiO ₂ fluorine mica, P ₂ O ₅ -Li ₂ O-SiO ₂ lithium silicate The ceramic-based micro hot plate according to claim 15, wherein the ceramic-based micro hot plate is provided. The ceramic-based microhot plate according to claim 4, wherein when the ceramic slurry is a single-phase ceramic, the single-phase ceramic is barium barium borate ceramic or zirconium borate barium ceramic in the ceramic slurry. The thickness of the heating electrode is 0.5 um to 50 um so as to include the endpoint value.
The ceramic according to claim 1, wherein the material of the heating electrode is any one of Pt, Au, Ag, Cu, Al, Ni, W, Ag / Pd alloy and Pt / Au alloy. Base micro hot plate. The thickness of the heating resistance is 0.5 um to 50 um so as to include the endpoint value.
The heating resistance is a resistance wiring having a predetermined shape formed by the patterning process of the conductive film layer.
The materials for the heating resistance are Pt, Au, Ag, Cu, Al, Ni, W, Mo, Ni / Cr alloy, Mo / Mn alloy, Cu / Zn alloy, Ag / Pd alloy, Pt / Au alloy, Fe /. The ceramic-based micro hot plate according to claim 1, wherein the alloy is one of Co alloy, RuO ₂ and SnO ₂ : Sb ₂ O ₃ . A method for manufacturing a ceramic-based micro hot plate for manufacturing the ceramic-based micro hot plate according to any one of claims 1 to 20, wherein the manufacturing method is a method for manufacturing the ceramic-based micro hot plate.
A step of providing a silicon substrate having a first surface and a second surface facing each other, wherein the first surface has a central heating region and a peripheral support region.
A step of forming a film layer of a predetermined ceramic slurry on the first surface,
A step of forming a ceramic film attached to the first surface through a drying step and a sintering step in order, and a step of forming the ceramic film.
A step of forming a conductive film layer of a predetermined conductive slurry on the surface of the ceramic film,
A step of forming a heating layer attached to the surface of the ceramic film through a drying step and a sintering step in order, and a step of forming a heating layer.
A manufacturing method comprising: etching the second surface to form an air insulating chamber penetrating the first surface and the second surface so as to correspond to the central heating region. The process temperature during drying is 40 ° C. to 200 ° C., so that the endpoint value is included.
The manufacturing method according to claim 21, wherein the process temperature at the time of sintering is 500 ° C. to 1400 ° C. so as to include the endpoint value.

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