JP2022188893A - Semiconductor device - Google Patents

Abstract

To provide a semiconductor device that can easily discharge heat generated by semiconductor chips.SOLUTION: A semiconductor device has a substrate, a first circuit pattern on the substrate, a second circuit pattern on the substrate, a third circuit pattern on the substrate, a first semiconductor chip having a first electrode and a second electrode on the third circuit pattern, and a metal plate, and the first electrode is bonded to the third circuit pattern and the metal plate is bonded to the first circuit pattern, the second circuit pattern and the second electrode.SELECTED DRAWING: Figure 3

Description

The present disclosure relates to semiconductor devices.

A semiconductor device in which a metal plate is connected to an electrode of a semiconductor chip has been proposed as a semiconductor device used in a power module (for example, Patent Documents 1 and 2).

JP 2016-162773 A JP-A-2000-156439

In a conventional semiconductor device, the heat generated in the semiconductor chip cannot be sufficiently discharged, and the temperature of the semiconductor chip may rise excessively.

An object of the present disclosure is to provide a semiconductor device that can easily discharge heat generated in a semiconductor chip.

A semiconductor device according to the present disclosure includes a substrate, a first circuit pattern provided on the substrate, a second circuit pattern provided on the substrate, and a third circuit pattern provided on the substrate. a first semiconductor chip provided on the third circuit pattern and having a first electrode and a second electrode; and a metal plate, wherein the first electrode is bonded to the third circuit pattern. and the metal plate is bonded to the first circuit pattern, the second circuit pattern and the second electrode.

According to the present disclosure, heat generated in a semiconductor chip can be easily discharged.

FIG. 1 is a top view showing the semiconductor device according to the first embodiment. FIG. 2 is a top view showing the first semiconductor chip and the second semiconductor chip in the first embodiment. FIG. 3 is a cross-sectional view showing the semiconductor device according to the first embodiment. FIG. 4 is a cross-sectional view showing a semiconductor device according to a modification of the first embodiment; FIG. 5 is a top view showing the semiconductor device according to the second embodiment. FIG. 6 is a top view showing the first semiconductor chip and the second semiconductor chip in the second embodiment.

The form for carrying out is demonstrated below.

[Description of Embodiments of the Present Disclosure]
First, the embodiments of the present disclosure are listed and described. In the following description, the same or corresponding elements are given the same reference numerals and the same descriptions thereof are not repeated.

[1] A semiconductor device according to an aspect of the present disclosure includes a substrate, a first circuit pattern provided on the substrate, a second circuit pattern provided on the substrate, and a a third circuit pattern provided; a first semiconductor chip provided on the third circuit pattern and having a first electrode and a second electrode; and a metal plate, wherein the first electrode comprises: Bonded to the third circuit pattern, the metal plate is bonded to the first circuit pattern, the second circuit pattern and the second electrode.

Since the metal plate is joined to the first circuit pattern, the second circuit pattern and the second electrode, the second electrode is electrically connected to the first circuit pattern and the second circuit pattern. Therefore, signals are transmitted between the second electrode and the first circuit pattern and the second circuit pattern. Also, heat generated in the first semiconductor chip is transferred from the second electrode to both the first circuit pattern and the second circuit pattern through the metal plate. Therefore, compared to the case where the metal plate is not bonded to either the first circuit pattern or the second circuit pattern, heat generated in the first semiconductor chip can be easily discharged.

[2] In [1], the third circuit pattern may be provided between the first circuit pattern and the second circuit pattern. In this case, the heat generated in the semiconductor chip is discharged in two opposite directions, so that the heat can be discharged more easily.

[3] In [1] or [2], the first semiconductor chip may be a transistor chip or a diode chip. Even if the amount of heat generated in the transistor chip or diode chip used for the first semiconductor chip is large, the heat can be easily discharged, and failures due to heat generation can be suppressed.

[4] In [1] to [3], a second semiconductor chip is provided on the third circuit pattern and has a third electrode and a fourth electrode, and the third electrode The metal plate may be joined to the circuit pattern, and the metal plate may also be joined to the fourth electrode. In this case, heat generated in the second semiconductor chip can also be easily discharged. Furthermore, it is possible to reduce variations in heat exhaust efficiency between the first semiconductor chip and the second semiconductor chip. In particular, when the first semiconductor chip and the second semiconductor chip are of the same type and generate heat to the same extent, the temperature difference between the first semiconductor chip and the second semiconductor chip is reduced, making one of them more susceptible to failure. You can easily avoid situations like this.

[5] In [4], the second semiconductor chip may be a transistor chip or a diode chip. Even if the amount of heat generated in the transistor chip or diode chip used for the second semiconductor chip is large, the heat can be easily discharged, and failures due to heat generation can be suppressed.

[6] In [1] to [5], the second semiconductor chip may be a silicon carbide semiconductor chip. In this case, an excellent breakdown voltage is obtained in the second semiconductor chip. Moreover, even if the silicon carbide semiconductor chip generates a large amount of heat, the heat generated in the second semiconductor chip can be easily discharged, and failures due to heat generation can be suppressed.

[7] In [1] to [6], a first external terminal for source electrically connected to the first circuit pattern and a second external terminal for Kelvin source electrically connected to the second circuit pattern. 2 external terminals. In this case, the second electrode can be used as a source electrode.

[8] In [1] to [7], the metal plate has a first bonding surface that is bonded to the first circuit pattern, a second bonding surface that is bonded to the second circuit pattern, and the second bonding surface. a third bonding surface to be bonded to an electrode, a first connecting portion connecting the first bonding surface and the third bonding surface, and a second connecting portion connecting the second bonding surface and the third bonding surface , may have In this case, for example, the metal plate can be easily formed by bending or the like.

[9] In [8], the area of the first joint surface may be larger than the area of the second joint surface. In this case, the amount of current flowing through the first circuit pattern can be made larger than the amount of current flowing through the second circuit pattern.

[10] In [1] to [9], in plan view, the metal plate extends in a first direction, and the first semiconductor chip has first and second sides parallel to the first direction, and a third side and a fourth side perpendicular to the first direction, and the lengths of the first side and the second side are less than the lengths of the third side and the fourth side good too. In this case, the third and fourth sides, which are longer than the first and second sides, are perpendicular to the first direction in which the metal plate extends, so heat generated in the first semiconductor chip can be easily discharged.

[11] In [1] to [10], the first semiconductor chip may be a silicon carbide semiconductor chip. In this case, an excellent breakdown voltage can be obtained in the first semiconductor chip. Moreover, even when the amount of heat generated by the silicon carbide semiconductor chip is large, the heat generated in the first semiconductor chip can be easily discharged, and failures due to heat generation can be suppressed.

[Details of the embodiment of the present disclosure]
Hereinafter, embodiments of the present disclosure will be described in detail, but the present embodiments are not limited to these. In the present specification and drawings, constituent elements having substantially the same functional configuration may be given the same reference numerals to omit redundant description. In this specification and drawings, the X1-X2 direction, the Y1-Y2 direction, and the Z1-Z2 direction are mutually orthogonal directions. A plane including the X1-X2 direction and the Y1-Y2 direction is the XY plane, a plane including the Y1-Y2 direction and the Z1-Z2 direction is the YZ plane, and a plane including the Z1-Z2 direction and the X1-X2 direction is the ZX plane. do. For convenience, the Z1 direction is defined as the upward direction, and the Z2 direction is defined as the downward direction. In addition, in the present disclosure, planar viewing means viewing an object from the Z1 side. The Y1-Y2 direction is an example of the first direction, and the X1-X2 direction is an example of the second direction.

(First embodiment)
A first embodiment will be described. The first embodiment relates to a semiconductor device. FIG. 1 is a top view showing the semiconductor device according to the first embodiment. FIG. 2 is a top view showing the first semiconductor chip and the second semiconductor chip in the first embodiment. FIG. 3 is a cross-sectional view showing the semiconductor device according to the first embodiment. FIG. 3 corresponds to a cross-sectional view taken along line III-III in FIG.

As shown in FIGS. 1 to 3, the semiconductor device 1 according to the first embodiment mainly includes a first semiconductor chip 100, a second semiconductor chip 200, a metal plate 300, a heat sink 400, and a substrate 500. , has a case 600 .

The heat sink 400 has a Z1 side surface 401 and a Z2 side surface 402 , and a substrate 500 is provided above the surface 401 . For example, the heat sink 400 is a copper (Cu) plate on which a nickel (Ni) plating film is formed.

The substrate 500 has an insulating base material 510 , a first circuit pattern 521 , a second circuit pattern 522 , a third circuit pattern 523 , a fourth circuit pattern 524 and a conductive layer 530 . The substrate 510 is made of ceramic such as silicon nitride (Si ₃ N ₄ ), and has a surface 511 on the Z1 side and a surface 512 on the Z2 side. A first circuit pattern 521 , a second circuit pattern 522 , a third circuit pattern 523 and a fourth circuit pattern 524 are formed on the surface 511 of the substrate 510 . In the cross section shown in FIG. 3, the third circuit pattern 523 is arranged on the Y2 side of the first circuit pattern 521, the fourth circuit pattern 524 is arranged on the Y2 side of the third circuit pattern 523, and the second circuit pattern 522 is arranged on the Y2 side. 4 is arranged on the Y2 side of the circuit pattern 524 . That is, the third circuit pattern 523 is arranged between the first circuit pattern 521 and the second circuit pattern 522 . Conductive layer 530 is formed on surface 512 of substrate 510 . Conductive layer 530 may be provided generally over surface 512 . The conductive layer 530 is bonded to the radiator plate 400 with a bonding material 50 such as solder. For example, the first circuit pattern 521, the second circuit pattern 522, the third circuit pattern 523, the fourth circuit pattern 524 and the conductive layer 530 are copper layers. For example, the bonding material 12 is tin (Sn)-silver (Ag)-copper (Cu) solder or tin (Sn)-antimony (Sb) solder.

A first semiconductor chip 100 and a second semiconductor chip 200 are mounted on a substrate 500 . For example, the first semiconductor chip 100 is on the Y1 side of the second semiconductor chip 200 .

The first semiconductor chip 100 is a transistor such as a MOS field effect transistor (FET), for example, and has a rectangular planar shape in plan view. The first semiconductor chip 100 has a surface 101 on the Z1 side and a surface 102 on the Z2 side. A source electrode pad 111 and a gate electrode pad 113 are provided on the surface 101 , and a drain electrode pad 112 is provided on the surface 102 . For example, the gate electrode pad 113 is on the X2 side of the source electrode pad 111 . In plan view, the source electrode pad 111 and the gate electrode pad 113 have a rectangular planar shape, and the area of the source electrode pad 111 is larger than the area of the gate electrode pad 113 . In plan view, the drain electrode pad 112 has a rectangular planar shape and is provided substantially over the entire surface 102 . The drain electrode pad 112 is bonded to the third circuit pattern 523 with a bonding material 21 such as solder. For example, the bonding material 21 is Sn--Ag--Cu solder, Sn--Sb solder, or the like. The drain electrode pad 112 is an example of a first electrode, and the source electrode pad 111 is an example of a second electrode.

In plan view, the first semiconductor chip 100 has a first side 701 and a second side 702 parallel to the Y1-Y2 direction, and a third side 703 and a fourth side 704 parallel to the X1-X2 direction. The first side 701 is on the X1 side of the second side 702 and the third side 703 is on the Y1 side of the fourth side 704 . The first semiconductor chip 100 has a square planar shape, and the lengths of the first side 701 and the second side 702 are equal to the lengths of the third side 703 and the fourth side 704 .

Further, in plan view, the source electrode pad 111 has a fifth side 705 and a sixth side 706 parallel to the Y1-Y2 direction, and a seventh side 707 and an eighth side 708 parallel to the X1-X2 direction. The fifth side 705 is on the X1 side of the sixth side 706 and the seventh side 707 is on the Y1 side of the eighth side 708 . The source electrode pad 111 has a square planar shape, and the lengths of the fifth side 705 and the sixth side 706 are equal to the lengths of the seventh side 707 and the eighth side 708 . The fifth side 705 and the sixth side 706 may be longer than the seventh side 707 and the eighth side 708 .

The second semiconductor chip 200 is, for example, a diode such as a Schottky Barrier Diode (SBD), and has a rectangular planar shape. The second semiconductor chip 200 has a surface 201 on the Z1 side and a surface 202 on the Z2 side. An anode electrode pad 211 is provided on the surface 201 and a cathode electrode pad 212 is provided on the surface 202 . When viewed from above, the anode electrode pad 211 has a rectangular planar shape and is provided substantially over the entire surface 201 . In plan view, the cathode electrode pad 212 has a rectangular planar shape and is provided substantially over the entire surface 202 . The cathode electrode pad 212 is joined to the third circuit pattern 523 with a joining material 22 such as solder. For example, the bonding material 22 is Sn--Ag--Cu based solder, Sn--Sb based solder, or the like. The cathode electrode pad 212 is an example of a third electrode, and the anode electrode pad 211 is an example of a fourth electrode.

In plan view, the second semiconductor chip 200 has a ninth side 709 and a tenth side 710 parallel to the Y1-Y2 direction, and an eleventh side 711 and a twelfth side 712 parallel to the X1-X2 direction. The ninth side 709 is on the X1 side of the tenth side 710 and the eleventh side 711 is on the Y1 side of the twelfth side 712 . The second semiconductor chip 200 has a square planar shape, and the lengths of the ninth side 709 and the tenth side 710 are equal to the lengths of the eleventh side 711 and the twelfth side 712 .

Further, in plan view, the anode electrode pad 211 has a 13th side 713 and a 14th side 714 parallel to the Y1-Y2 direction, and a 15th side 715 and a 16th side 716 parallel to the X1-X2 direction. The thirteenth side 713 is on the X1 side of the fourteenth side 714 and the fifteenth side 715 is on the Y1 side of the sixteenth side 716 . The anode electrode pad 211 has a square planar shape, and the lengths of the 13th side 713 and the 14th side 714 are equal to the lengths of the 15th side 715 and the 16th side 716 . The thirteenth side 713 and the fourteenth side 714 may be longer than the thirteenth side 713 and the fourteenth side 714 .

Metal plate 300 extends in the Y1-Y2 direction. The metal plate 300 has a first joint surface 301 , a second joint surface 302 , a third joint surface 303 , a first connecting portion 311 and a second connecting portion 312 . The first bonding surface 301 is bonded to the first circuit pattern 521 . The second bonding surface 302 is bonded to the second circuit pattern 522 . A third bonding surface 303 is bonded to the source electrode pad 111 and the anode electrode pad 211 . The first connecting portion 311 connects the first joint surface 301 and the third joint surface 303 . The second connecting portion 312 connects the second joint surface 302 and the third joint surface 303 . Metal plate 300 is, for example, a copper plate. Metal plate 300 may be a copper plate having a nickel plating film formed thereon. The metal plate 300 is formed, for example, by bending one metal plate. The metal plate 300 can be easily formed by bending or the like.

The first circuit pattern 521 and the first joint surface 301 are joined with a joint material 11 such as solder. The second circuit pattern 522 and the second joint surface 302 are joined with a joint material 12 such as solder. The source electrode pad 111 and the third bonding surface 303 are bonded with a bonding material 31 such as solder. The anode electrode pad 211 and the third joint surface 303 are joined with a joint material 32 such as solder. For example, the bonding material 11, the bonding material 12, the bonding material 31, and the bonding material 32 are Sn-Ag-Cu solder, Sn-Sb solder, or the like.

The case 600 is formed, for example, in a frame shape in plan view. The material of the case 600 is an insulator such as resin. The substrate 500 is arranged inside the case 600 in plan view. The case 600 is provided with a first external terminal 601 for source, a second external terminal 602 for Kelvin source, a third external terminal 603 for drain, and a fourth external terminal 604 for gate. .

For example, the first external terminal 601 is connected to the first circuit pattern 521 by a bonding material (not shown) such as solder, and the third external terminal 603 is connected to the third circuit by a bonding material (not shown) such as solder. It is joined to pattern 523 . The first external terminal 601 for source is electrically connected to the first circuit pattern 521 , and the third external terminal 603 for drain is electrically connected to the third circuit pattern 523 . If the first external terminal 601 and the first circuit pattern 521 are electrically connected, another circuit pattern or a conductive member such as a bonding wire is placed between the first external terminal 601 and the first circuit pattern 521. may intervene. If the third external terminal 603 and the third circuit pattern 523 are electrically connected, another circuit pattern or a conductive member such as a bonding wire is placed between the third external terminal 603 and the third circuit pattern 523. may intervene.

The semiconductor device 1 includes a bonding wire 41 connecting the second circuit pattern 522 and the second external terminal 602, a bonding wire 42 connecting the gate electrode pad 113 and the fourth circuit pattern 524, and a fourth circuit pattern 524. and a bonding wire 43 that connects to the fourth external terminal 604 . A second external terminal 602 for the Kelvin source is electrically connected to the second circuit pattern 522 and a fourth external terminal 604 for the gate is electrically connected to the fourth circuit pattern 524 .

In the semiconductor device 1 according to the first embodiment, the metal plate 300 is bonded to the source electrode pad 111 and the anode electrode pad 211, and the metal plate 300 is bonded to the first circuit pattern 521 and the second circuit pattern 522. Therefore, heat generated in the first semiconductor chip 100 is transferred from the source electrode pad 111 to the first circuit pattern 521 and the second circuit pattern 522 through the metal plate 300 . Also, heat generated in the second semiconductor chip 200 is transferred from the anode electrode pad 211 to the first circuit pattern 521 and the second circuit pattern 522 through the metal plate 300 . Therefore, compared to the case where the metal plate 300 is bonded to the first circuit pattern 521 and not bonded to the second circuit pattern 522, the heat generated in the first semiconductor chip 100 and the heat generated in the second semiconductor chip 200 are reduced. It is possible to easily discharge the generated heat.

A first circuit pattern 521 is electrically connected to the first external terminal 601 for the source, and a second circuit pattern 522 is electrically connected to the second external terminal 602 for the Kelvin source. Therefore, the metal plate 300 can exhibit its function as a current path and also as a heat exhaust path. Moreover, bonding wires for connecting the first semiconductor chip 100 and the second circuit pattern 522 can be eliminated.

Since the third circuit pattern 523 provided with the first semiconductor chip 100 and the second semiconductor chip 200 is provided between the first circuit pattern 521 and the second circuit pattern 522, the heat is exhausted through the metal plate 300. There are two directions, Y1 side and Y2 side, which are opposite to each other. Therefore, heat can be more easily discharged.

The first semiconductor chip 100 and the second semiconductor chip 200 may be silicon carbide semiconductor chips fabricated using a silicon carbide (SiC) substrate, for example. A silicon carbide semiconductor chip provides, for example, an excellent breakdown voltage. In addition, even if the amount of heat generated increases because the first semiconductor chip 100 and the second semiconductor chip 200 are silicon carbide semiconductor chips, the heat generated in the first semiconductor chip 100 and the second semiconductor chip 200 can be easily discharged. , failures due to heat generation can be suppressed.

Note that the first semiconductor chip 100 and the second semiconductor chip 200 are not limited to a transistor chip and a diode chip, respectively. For example, both may be transistor chips or diode chips, and the first semiconductor chip 100 may be a diode chip and the second semiconductor chip 200 may be a transistor chip. In particular, when the first semiconductor chip 100 and the second semiconductor chip 200 are semiconductor chips of the same type and generate heat to the same degree, the temperature difference between the first semiconductor chip 100 and the second semiconductor chip 200 can be reduced. , making it easier to avoid situations in which one is more likely to fail.

In this embodiment, the first circuit pattern 521 is connected to the first external terminal 601 for source, and the second circuit pattern 522 is connected to the second external terminal 602 for Kelvin source. Therefore, by making the area of the first joint surface 301 of the metal plate 300 larger than the area of the second joint surface 302, the amount of current flowing through the first circuit pattern 521 is reduced to that of the current flowing through the second circuit pattern 522. It's easier to make more than quantity.

Note that the substrate 500 may not be used. FIG. 4 is a cross-sectional view showing a semiconductor device according to a modification of the first embodiment; FIG. 4, like FIG. 3, corresponds to a cross-sectional view taken along line III-III in FIGS. 1 and 2. FIG. For example, as shown in FIG. 4, an insulating layer 410 made of resin or the like is provided on a radiator plate 400, and on the insulating layer 410, a first circuit pattern 521, a second circuit pattern 522, a third circuit pattern 523, and a A fourth circuit pattern 524 may be provided.

The semiconductor device 1 may have an upper arm and a lower arm, and each of the upper arm and the lower arm may include the first semiconductor chip 100 and the second semiconductor chip 200 .

(Second embodiment)
A second embodiment will be described. The second embodiment differs from the first embodiment in the planar shapes of the first semiconductor chip and the second semiconductor chip. FIG. 5 is a top view showing the semiconductor device according to the second embodiment. FIG. 6 is a top view showing the first semiconductor chip and the second semiconductor chip in the second embodiment.

As shown in FIGS. 5 and 6, in the semiconductor device 2 according to the second embodiment, the lengths of the first side 701 and the second side 702 of the first semiconductor chip 100 are equal to the lengths of the third side 703 and the fourth side 704. less than the length of Also, the fifth side 705 and the sixth side 706 of the source electrode pad 111 are shorter than the seventh side 707 and the eighth side 708 .

Furthermore, in the semiconductor device 2 according to the second embodiment, the lengths of the ninth side 709 and the tenth side 710 of the second semiconductor chip 200 are smaller than the lengths of the eleventh side 711 and the twelfth side 712 . Also, the thirteenth side 713 and the fourteenth side 714 of the anode electrode pad 211 are shorter than the thirteenth side 713 and the fourteenth side 714 .

Other configurations are the same as those of the first embodiment.

The same effects as those of the first embodiment can be obtained by the second embodiment. In addition, since the long sides of the first semiconductor chip 100 and the second semiconductor chip 200 are perpendicular to the direction in which the metal plate 300 extends (the Y1-Y2 direction), compared with the case where the short sides are perpendicular to the Y1-Y2 direction. As a result, the heat generated in the first semiconductor chip 100 and the heat generated in the second semiconductor chip 200 can be easily discharged.

In the present disclosure, the transistors are not limited to MOSFETs, and the transistors may be insulated gate bipolar transistors (IGBTs). When the transistor is an IGBT, the collector electrode pad is an example of the first electrode and the emitter electrode pad is an example of the second electrode.

Although the embodiment has been described in detail above, it is not limited to a specific embodiment, and various modifications and changes are possible within the scope described in the claims.

1, 2: semiconductor devices 11, 12, 21, 22, 31, 32, 50: bonding materials 41, 42, 43: bonding wires 100: first semiconductor chips 101, 102, 201, 202, 401, 402, 511, 512: Surface 111: Source electrode pad (second electrode)
112: Drain electrode pad (first electrode)
113: Gate electrode pad 200: Second semiconductor chip 211: Anode electrode pad (fourth electrode)
212: Cathode electrode pad (third electrode)
300: Metal plate 301: First joint surface 302: Second joint surface 303: Third joint surface 311: First connecting part 312: Second connecting part 400: Radiator plate 410: Insulating layer 500: Substrate 510: Base material 521 : First circuit pattern 522: Second circuit pattern 523: Third circuit pattern 524: Fourth circuit pattern 530: Conductive layer 600: Case 601: First external terminal 602: Second external terminal 603: Third external terminal 604: Fourth external terminal 701: first side 702: second side 703: third side 704: fourth side 705: fifth side 706: sixth side 707: seventh side 708: eighth side 709: ninth side 710 : 10th side 711: 11th side 712: 12th side 713: 13th side 714: 14th side 715: 15th side 716: 16th side

Claims (11)

a substrate;
a first circuit pattern provided on the substrate;
a second circuit pattern provided on the substrate;
a third circuit pattern provided on the substrate;
a first semiconductor chip provided on the third circuit pattern and having a first electrode and a second electrode;
a metal plate;
has
the first electrode is bonded to the third circuit pattern;
The semiconductor device, wherein the metal plate is bonded to the first circuit pattern, the second circuit pattern and the second electrode. 2. The semiconductor device according to claim 1, wherein said third circuit pattern is provided between said first circuit pattern and said second circuit pattern. 3. The semiconductor device according to claim 1, wherein said first semiconductor chip is a transistor chip or a diode chip. a second semiconductor chip provided on the third circuit pattern and having a third electrode and a fourth electrode;
the third electrode is bonded to the third circuit pattern;
4. The semiconductor device according to claim 1, wherein said metal plate is also joined to said fourth electrode. 5. The semiconductor device according to claim 4, wherein said second semiconductor chip is a transistor chip or a diode chip. 6. The semiconductor device according to claim 4, wherein said second semiconductor chip is a silicon carbide semiconductor chip. a first external terminal for a source electrically connected to the first circuit pattern;
a second external terminal for a Kelvin source electrically connected to the second circuit pattern;
7. The semiconductor device according to claim 1, comprising: The metal plate is
a first bonding surface bonded to the first circuit pattern;
a second bonding surface bonded to the second circuit pattern;
a third joint surface joined to the second electrode;
a first connecting portion that connects the first joint surface and the third joint surface;
a second connecting portion that connects the second joint surface and the third joint surface;
8. The semiconductor device according to claim 1, comprising: 9. The semiconductor device according to claim 8, wherein the area of said first bonding surface is larger than the area of said second bonding surface. Planar view,
The metal plate extends in a first direction,
The first semiconductor chip is
a first side and a second side parallel to the first direction;
a third side and a fourth side perpendicular to the first direction;
has
10. The semiconductor device according to claim 1, wherein lengths of said first side and said second side are shorter than lengths of said third side and said fourth side. 11. The semiconductor device according to claim 1, wherein said first semiconductor chip is a silicon carbide semiconductor chip.

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