JP2022157728A - Semiconductor device and semiconductor system - Google Patents

Abstract

To provide a semiconductor device capable of improving reliability by providing a function of effectively absorbing and dissipating heat.SOLUTION: In a semiconductor device including a stack having at least one semiconductor element disposed between a first substrate and a second substrate, a thermally conductive portion that is thermally connected to a third substrate different from a first substrate and the second substrate is provided near the semiconductor element and at substantially the same stacking direction height as the first substrate. The thermally conductive portion is electrically insulated from the semiconductor element, and the thermally conductive portion is arranged around the semiconductor element.SELECTED DRAWING: Figure 1

Description

The present invention relates to a semiconductor device and a semiconductor system on which semiconductor elements are mounted. More particularly, the present invention relates to a semiconductor device and a semiconductor system capable of effectively guiding heat generated from a semiconductor element or the like inside a housing to the outside of the housing.

2. Description of the Related Art A so-called electronic component built-in module technology is known, which three-dimensionally mounts a semiconductor device with high density by stacking circuit boards on which semiconductor elements are mounted. Especially when modularizing semiconductor elements such as IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) with switching functions. However, semiconductor elements and their electrical circuit components generate a relatively large amount of heat. For this reason, studies are underway on how to dissipate this heat to the outside of the module. For example, in the semiconductor device disclosed in Patent Document 1, the base end of a post portion 35T for establishing a heat dissipation path is connected to the upper surface of a semiconductor element (semiconductor device Q10) made of a MOSFET, thereby increasing the temperature of the semiconductor element. A configuration is disclosed in which heat generated from the upper surface is dissipated to the upper and lower portions of the upper surface of the module.

WO2018/047485

In the configuration of Patent Document 1, heat generated from the upper surface of the semiconductor element can be effectively dissipated to the outside of the module. However, as modules become smaller and more dense, even if the heat is locally dissipated from the semiconductor element, the heat raises the temperature of the entire element, and the heat is dissipated from the entire semiconductor element. Therefore, in a heat dissipation structure that focuses only on a specific surface of a semiconductor element, it becomes difficult to suppress the temperature rise of the entire module, and it becomes difficult to maintain stable operation of the semiconductor device over a long period of time.
SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a semiconductor device capable of improving reliability by providing a function of effectively absorbing and dissipating heat generated by a semiconductor element.

The present inventors have found that the semiconductor device described below can solve the conventional problems described above.
A semiconductor device according to an embodiment of the present invention is a semiconductor device including a laminate in which at least one semiconductor element is arranged between a first substrate and a second substrate, and in the vicinity of the semiconductor element and a thermally conductive portion thermally connected to a third substrate different from the first substrate and the second substrate is provided at a position of substantially the same stacking direction height as the first substrate. and the heat conducting portion is electrically insulated from the semiconductor element, and the heat conducting portion is arranged around the semiconductor element.

According to the embodiment of the present invention configured as described above, the heat conducting portion disposed around the semiconductor element can absorb and dissipate heat generated from the semiconductor element. Therefore, reliability of the semiconductor device can be improved.

1 is a cross-sectional view of a semiconductor device according to a first embodiment of the present invention; FIG. It is a perspective view showing an example of a heat conduction part in a 1st embodiment of the present invention. FIG. 4 is a perspective view showing another example of the heat conducting portion according to the first embodiment of the present invention; FIG. 4 is a cross-sectional view of a semiconductor device according to a second embodiment of the invention; 1 is a block configuration diagram showing an example of a control system employing a semiconductor device according to an embodiment; FIG. 1 is a circuit diagram showing an example of a control system employing a semiconductor device according to an embodiment of the invention; FIG. FIG. 3 is a block configuration diagram showing another example of a control system employing the semiconductor device according to the embodiment of the invention; FIG. 10 is a circuit diagram showing another example of a control system employing the semiconductor device according to the embodiment of the invention;

Several embodiments of the present invention will be described below with reference to the drawings. In addition, the overlapping description is abbreviate|omitted by attaching|subjecting the same code|symbol to the same component.

FIG. 1 is a cross-sectional view showing a first embodiment of a semiconductor device according to the present invention. As shown in FIG. 1, a semiconductor device 110 has first and second semiconductor elements 2 and 3 provided on a circuit board 1 (first board). In this embodiment, the first semiconductor element 2 is an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) having a switching function. Examples of the second semiconductor element 3 include diodes such as SBDs (Schottky Barrier Diodes) and PiN diodes, which are semiconductor components, but are not limited to these.

Under the circuit board 1, a first metal board 4 and a second metal board 5 are laminated so as to be parallel to each other. The circuit board 1 and the first metal substrate 4 are connected by vias 6 , and the first metal substrate 4 and the second metal substrate 5 are connected by vias 7 . With these structures, the first and second semiconductor elements 2 and 3 are electrically connected and thermally connected from their lower surfaces to the circuit board 1, the first metal board 4 and the second metal board 5. ing. A third metal substrate (second substrate) 8 is laminated in parallel on the upper layer of the circuit board 1, so that the first and second semiconductor elements 2 and 3 are separated from the circuit board 1 and the third metal. It is arranged between the substrates 8 . The circuit board 1 and the third metal board 8 are connected by vias 9 and 10 . With these structures, the first and second semiconductor elements 2 and 3 are electrically and thermally connected to the third metal substrate 8 from their upper surfaces.
Although not shown here, in the embodiment of the present invention, the semiconductor element 2 includes a semiconductor layer, a first electrode provided on the first surface of the semiconductor layer, and the first surface of the semiconductor layer. has a second electrode provided on the opposite second surface. The semiconductor element 2 is a so-called vertical device. Moreover, in the embodiment of the present invention, the second electrode is electrically and thermally connected to a second substrate (third metal substrate) 8 through vias 9 . Also, the second metal substrate 5 and the third metal substrate 8 are electrically connected by through holes 11 . A material mainly containing copper (Cu) is used for electrical connection and thermal connection by these vias 6, 7, 9, 10 and through holes 11 and the like.

In the vicinity of the circuit board 1, a peripheral board (third board) 13 is arranged so as to surround the circuit board 1 via a predetermined gap 12a. The peripheral board 13 and the circuit board 1 are arranged at substantially the same height in the stacking direction when viewed from the cross-sectional direction of FIG. A thermally conductive member (thermally conductive portion) 14 is arranged on the peripheral substrate 13 . The heat conducting member 14 is preferably selected from materials having high thermal conductivity and thermal isotropy. The heat conducting member 14 is made of a material mainly composed of copper (Cu), for example, and is designed to have the same heat receiving/radiating characteristics (thermal conductivity) on the upper and lower surfaces and the heat receiving/radiating characteristics (thermal conductivity) on the side surfaces. It is

Similarly, peripheral substrates 15 and 16 are provided around the first metal substrate 4 and the second metal substrate 5 with predetermined gaps 12b and 12c interposed therebetween. The thickness and constituent materials of the peripheral substrates 15 and 16 are the same as those of the first and second metal substrates 4 and 5 . The dimension of the gap 12a and the dimensions of the gaps 12b and 12c may be the same or different, but in the present invention, it is more desirable that the size of the gap 12a is set small.

The peripheral substrates 13 and 15 are connected by vias 17 , and the peripheral substrates 15 and 16 are connected by vias 18 . The outer substrate 13, the outer substrate 15, the outer substrate 15, and the vias 17 and 18 are each made of a material containing copper (Cu), which is a material with high thermal conductivity, as a main component.

A resin layer 19 forming the module outer wall of the semiconductor device 110 is laminated on the upper portion of the third metal substrate 8 . The resin layer 19 is made of an electrically insulating material, and shields and prevents leakage of electric current to the outside of the module of the semiconductor device 110 . As the resin layer 19, for example, a resin sheet such as TIM (Thermal Interface Material) is used.

The internal space of the module is also filled with an electrically insulating material. Fiber-impregnated resin such as prepreg is used as the material filling the internal space of the module.

FIG. 2 is a perspective view showing the configuration of the heat conducting portion 14 and its vicinity according to the embodiment of the present invention. As shown in FIG. 2, the circuit board 1 has a rectangular shape, and a peripheral board 13 is arranged along the periphery of the circuit board 1 . The circuit board 1 and the peripheral board 13 are arranged in non-contact and close proximity to each other with a predetermined gap 12a interposed therebetween. An electric wiring pattern (not shown) is formed on the circuit board 1 for electrical conduction with the first and second semiconductor elements 2 and 3, but no electric wiring pattern is formed on the peripheral board 13. FIG. In addition, since the gap 12a between the circuit board (first board) 1 and the peripheral board (third board) 13 is filled with an electrically insulating material such as prepreg, the two are electrically insulated and heat are actually connected.

A heat conducting member 14 is arranged on the upper surface of the peripheral substrate 13 . In this embodiment, both the peripheral substrate 13 and the heat conducting member 14 are square-shaped. The width of the heat conducting member 14 is the same as or slightly smaller than the width of the peripheral substrate 13 . The thickness of the heat conducting member 14 may be the same as the thickness of the first and second semiconductor elements 2 and 3, but as long as there is room to spare, the thickness of the first and second semiconductor elements 2 and 3 may be the same. is preferably greater than By arranging the peripheral substrate 13 so as to surround the circuit board 1 , the heat conducting member 14 surrounds the first and second semiconductor elements 2 and 3 .

As a method for forming the heat conducting member 14 on the peripheral substrate 13, it is possible to use adhesion, plating, diffusion bonding, or the like.

The operation of the semiconductor device 110 according to the first embodiment of the present invention configured as above will be described in detail.

In order to supply predetermined power to a controlled object (not shown), a current is output from the emitter by applying a control signal to the gate electrode of the first semiconductor element 2 (eg, IGBT). Further, by circulating the output from the emitter to the collector through the second semiconductor element 3 (for example, SBD), a stable switching operation is performed with excess carriers removed. By controlling the switching timing of this switching, stable power is supplied to the controlled object, and by changing the voltage according to the situation, the controlled object is caused to perform a desired operation. Control signals and input/output power related to these series of control operations are transmitted from the lower surfaces of the semiconductor elements 2 and 3 to the second metal substrate 5 via the circuit board 1, vias 6, first metal substrate 4, and vias 7. and an electrical path from the upper surfaces of the semiconductor elements 2 and 3 to the second metal substrate 5 via the vias 9, the third metal substrate 8, and the through holes 11. FIG. That is, input/output of power and control signals is performed by passing through each substrate that constitutes the stacked body inside the semiconductor device 110 .

As the switching operation continues, the semiconductor elements 2 and 3 gradually generate heat. Since the amount of heat generated by the semiconductor elements 2 and 3 is the greatest in the vicinity of the electrodes, heat is dissipated by connecting a material with high thermal conductivity to the electrode surface side of the semiconductor elements and conducting heat to the outside of the module. When the semiconductor element is a so-called vertical device, heat dissipation structures are provided on both sides of the semiconductor element. Since both the semiconductor elements 2 and 3 of this embodiment are vertical devices, heat is radiated using the two electric paths described above. That is, by conducting heat from the lower surfaces of the semiconductor elements 2 and 3 to the second metal substrate 5 , the heat is radiated from a heat sink (not shown) or the like connected to the lower surface of the second metal substrate 5 . Further, by conducting heat from the upper surfaces of the semiconductor elements 2 and 3 to the third metal substrate 8 , the heat is dissipated from heat dissipating fins (not shown) connected to the upper surface of the resin layer 19 . That is, heat is radiated using a heat transfer path in the stacking direction by passing through each substrate constituting the stack inside the semiconductor device 110 .

In the embodiment of the present invention, in addition to the upper and lower surfaces of the semiconductor elements 2 and 3, a heat dissipation structure is provided for absorbing and dissipating heat emitted in the side direction of the semiconductor elements 2 and 3. FIG. That is, the left side surface of the semiconductor element 2 and the right side surface of the semiconductor element 3 in FIG. It is possible to effectively absorb the heat emitted in the lateral direction. Further, as shown in FIG. 2, the heat conducting member 14 is arranged so as to surround the semiconductor elements 2 and 3, so that heat radiation from either side surface of the semiconductor elements 2 and 3 can be reliably absorbed. can be done. In particular, since the heat conducting member 14 has an annular shape that is continuously formed without interruption, the heat conducting member 14 tends to have a uniform temperature as a whole, and the entire contact surface with the outer peripheral substrate 13 is effectively used for heat generation. Conduction becomes possible.

The heat absorbed by the heat conducting member 14 passes through the peripheral substrate 13, vias 17, 15, 18, and 16 which are thermally connected, as indicated by arrows in FIG. , reaches a heat sink or the like (not shown) connected to the lower surface of the peripheral substrate 16, and is dissipated to the outside of the module. That is, by using the heat-conducting member 14, heat is received by the side surface of the heat-conducting member 14, and heat is dissipated by conducting heat downward from the lower surface of the heat-conducting member 14, which is the direction perpendicular to the heat receiving direction. . In order to realize a heat radiation path in which the heat receiving surface and the heat radiation surface are perpendicular to each other, it is desirable that the heat conducting member 14 be made of a material having isotropic thermal conductivity. In particular, by forming the material mainly composed of copper (Cu), which has high thermal conductivity and excellent electrical conductivity, the heat conductive member 14 having excellent connectivity with the circuit board and vias is realized. .

According to the embodiment of the present invention in which such operation is performed, the heat conducting member arranged around the semiconductor element can effectively absorb the heat radiated in the lateral direction of the semiconductor element and provide heat dissipation. . Therefore, the heat radiation performance becomes extremely good, so that the reliability of the semiconductor device can be improved. Further, according to the embodiment of the present invention, the second substrate (third metal substrate) 13 is not used for electrical conduction, but used only for thermal conduction. Therefore, it is possible to further increase the degree of freedom in designing the heat dissipation path for the heat generated from the side surface of the semiconductor element. According to the embodiment of the present invention, a heat conducting member is arranged surrounding the outer circumference of the circuit board 1 on which the first semiconductor element 2 and the second semiconductor element 3 are mounted. Therefore, it is possible to improve the heat dissipation in the lateral direction of each semiconductor element without affecting the electrical connection with the first semiconductor element 2 and the second semiconductor element 3 .

Moreover, since both the semiconductor elements 2 and 3 of this embodiment are vertical devices, electric circuits are formed on the circuit board 1 and the third board 8 corresponding to the respective electrodes. In order to form an electric circuit, it is not possible to manufacture the entire substrate from a material with high thermal conductivity such as copper for reasons of insulation and wiring design. Therefore, the amount of heat radiation from each substrate is reduced as compared with the case of using a lateral device. However, by using the heat conducting portion 14 according to the present invention, heat can be radiated via the heat conducting portion 14 in addition to the heat dissipation from the circuit board 1 and the third substrate 8 on which the electric circuit is formed. Therefore, the heat dissipation effect can be improved.

FIG. 3 is a perspective view showing a second embodiment of a semiconductor device according to the present invention. In this second embodiment, a heat conducting member 20 different from the heat conducting member 14 of the first embodiment is used. That is, the heat conducting members 20a to 20d are composed of four independent members, and are intermittently arranged on straight portions of the peripheral substrate 13 except for the four corners. All of the heat conducting members 20a to 20d are arranged parallel to the side surfaces of the semiconductor elements 2 and 3 along the side surfaces of the semiconductor elements 2 and 3 facing each other. Moreover, the side surfaces of the heat conducting members 20a to 20d and the side surfaces of the semiconductor elements 2 and 3 are arranged at approximately the same distance. The length of the long side of the heat conducting member 20a is set to be equal to or longer than the length of the side surface of the second semiconductor element 3 facing each other. is longer than the length of the side of the Moreover, the length of the long sides of the heat conducting members 20b and 20d is set to be equal to or longer than the total length of the first semiconductor element 2 and the second semiconductor element 3 arranged side by side. As with the heat-conducting member 14 described above, the heat-conducting members 20a to 20d are also made of a material containing copper (Cu) as a main component.

Since the heat conducting members 20a to 20d configured in this way face at least one of the side surfaces of the first semiconductor element 2 and the second semiconductor element 3 at the same distance, they are positioned closest to the heat radiation side. This is an efficient configuration in which a heat-conducting member is provided in the In addition, since each of the heat conducting members 20a to 20d can be composed only of rectangular members, it is extremely easy to manufacture them on the peripheral substrate 13. FIG.

FIG. 4 is a cross-sectional view showing a semiconductor device according to a third embodiment of the present invention. The semiconductor device 120 in this embodiment is configured such that the entire upper portion of the third metal substrate 8 is covered with the shielding layer 21 . The shielding layer 21 is made of a material containing copper (Cu) as a main component, for example. , the shielding layer 21 is thermally connected to the heat-conducting member 24 through the via 22 and the fourth metal plate 23 . As indicated by the arrows in FIG. 4, the heat generated by the semiconductor elements 2 and 3 is received and absorbed by the side surfaces of the heat conducting member 24 . The heat transmitted to the heat conducting member 24 passes through the peripheral substrate 13, the vias 17, the peripheral substrate 15, the vias 18, and the peripheral substrate 16, which are thermally connected to the lower surface of the heat conducting member 24, and the peripheral substrate 16. By reaching a heat sink or the like (not shown) connected to the bottom surface, the heat is dissipated to the outside of the module. Further, in the present embodiment, heat is also dissipated from a heat dissipating fin (not shown) connected to the upper surface of the resin layer 19 via the vias 22 and the fourth metal plate 23 thermally connected to the upper surface of the heat conducting member 24. is done. That is, by using the heat-conducting member 24, the side surface of the heat-conducting member 24 receives heat. Heat is radiated by heat conduction upward from the upper surface of the . Also in this embodiment, it is desirable that the heat conducting member 24 be made of a thermally isotropic material in order to realize a heat radiation path in which the heat receiving surface and the heat radiation surface are orthogonal to each other. In particular, by forming the material mainly composed of copper (Cu), which has high thermal conductivity and excellent electrical conductivity, the heat conductive member 24 having excellent connectivity with the circuit board and vias is realized. . According to the semiconductor device 120 having such a configuration, in addition to the heat dissipation effect described above, it is possible to block electromagnetic noise generated inside the module from being emitted to the outside of the module.

A semiconductor device according to an embodiment of the present invention includes a semiconductor element using silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), etc., which are widely known as semiconductor materials for power semiconductors. Useful. In particular, it is extremely useful when including a semiconductor element using gallium oxide (α-GaO) with a corundum structure having a high bandgap or gallium oxide (β-GaO) with a β-gallia structure, increasing the density of the semiconductor device. It also contributes to reliability improvement.

It is of course possible to combine multiple embodiments according to the present invention described above, or to apply some of the constituent elements to other embodiments, and such things also belong to the embodiments of the present invention.
In the embodiment of the present invention, in addition to the first semiconductor element 1 and the second semiconductor element, other semiconductor elements may be incorporated. Also, other passive components (for example, capacitors, coils, resistors, etc.) may be further incorporated in the semiconductor device. In the embodiment of the present invention, the semiconductor device described above may be used as a submodule, and a plurality of these submodules may be combined to form a module for use.

The semiconductor device according to the embodiment of the present invention described above can be applied to power converters such as inverters and converters in order to exhibit the functions described above. FIG. 5 is a block configuration diagram showing an example of a control system using a semiconductor device according to an embodiment of the present invention, and FIG. 6 is a circuit diagram of the same control system, which is particularly suitable for mounting on an electric vehicle. control system.

As shown in FIG. 5, the control system 500 has a battery (power source) 501, a step-up converter 502, a step-down converter 503, an inverter 504, a motor (to be driven) 505, and a drive control section 506, which are mounted on an electric vehicle. It becomes The battery 501 is composed of a storage battery such as a nickel-metal hydride battery or a lithium-ion battery, and stores electric power by charging at a power supply station or regenerative energy during deceleration, and is necessary for the operation of the running system and electrical system of the electric vehicle. DC voltage can be output. The boost converter 502 is a voltage conversion device equipped with a chopper circuit, for example, and boosts the DC voltage of, for example, 200 V supplied from the battery 501 to, for example, 650 V by switching operation of the chopper circuit, and outputs it to a running system such as a motor. be able to. The step-down converter 503 is also a voltage conversion device equipped with a chopper circuit. It can be output to the electrical system including

Inverter 504 converts the DC voltage supplied from boost converter 502 into a three-phase AC voltage by switching operation, and outputs the three-phase AC voltage to motor 505 . The motor 505 is a three-phase AC motor that constitutes the running system of the electric vehicle, and is rotationally driven by the three-phase AC voltage output from the inverter 504. The rotational driving force is transmitted to the wheels of the electric vehicle via a transmission or the like (not shown). to

On the other hand, various sensors (not shown) are used to measure actual values such as the number of revolutions and torque of the wheels and the amount of depression of the accelerator pedal (acceleration amount) from the running electric vehicle. is entered. At the same time, the output voltage value of inverter 504 is also input to drive control section 506 . The drive control unit 506 has the function of a controller that includes an arithmetic unit such as a CPU (Central Processing Unit) and a data storage unit such as a memory. By outputting it as a feedback signal, the switching operation of the switching element is controlled. As a result, the AC voltage applied to the motor 505 by the inverter 504 is corrected instantaneously, so that the operation control of the electric vehicle can be accurately executed, and safe and comfortable operation of the electric vehicle is realized. It is also possible to control the output voltage to inverter 504 by giving the feedback signal from drive control section 506 to boost converter 502 .

FIG. 6 shows a circuit configuration excluding the step-down converter 503 in FIG. As shown in the figure, the semiconductor device according to the embodiment of the present invention is employed as a Schottky barrier diode in boost converter 502 and inverter 504 for switching control. Boost converter 502 is incorporated in a chopper circuit to perform chopper control, and inverter 504 is incorporated in a switching circuit including IGBTs to perform switching control. By interposing an inductor (such as a coil) in the output of the battery 501, the current is stabilized. It is stabilizing the voltage.

Further, as indicated by a dotted line in FIG. 6, the drive control unit 506 is provided with an operation unit 507 made up of a CPU (Central Processing Unit) and a storage unit 508 made up of a non-volatile memory. The signal input to the drive control unit 506 is supplied to the calculation unit 507, and programmed calculation is performed as necessary to generate a feedback signal for each semiconductor element. Further, the storage unit 508 temporarily holds the calculation result by the calculation unit 507, accumulates physical constants and functions required for drive control in the form of a table, and outputs them to the calculation unit 507 as appropriate. The calculation unit 507 and the storage unit 508 can employ known configurations, and their processing capabilities can be arbitrarily selected.

As shown in FIGS. 5 and 6, in the control system 500, switching operations of the boost converter 502, the step-down converter 503, and the inverter 504 use diodes and switching elements such as thyristors, power transistors, IGBTs, MOSFETs, and the like. . By using gallium oxide (Ga ₂ O ₃ ), especially corundum-type gallium oxide (α-Ga ₂ O ₃ ), as the material for these semiconductor elements, the switching characteristics are greatly improved. Furthermore, by applying the semiconductor device according to the embodiment of the present invention, extremely good switching characteristics can be expected, and further miniaturization and cost reduction of the control system 500 can be realized. That is, each of the boost converter 502, the step-down converter 503, and the inverter 504 can expect the effect of the present invention. The effect of the present invention can be expected in any of the above.

Note that the above-described control system 500 can apply not only the semiconductor device according to the embodiment of the present invention to the control system of an electric vehicle, but also various devices such as stepping up and stepping down power from a DC power supply and converting power from DC to AC. It can be applied to the control system of the application. It is also possible to use a power source such as a solar cell as the battery.

FIG. 7 is a block configuration diagram showing another example of a control system employing a semiconductor device according to an embodiment of the present invention, and FIG. 8 is a circuit diagram of the same control system, showing infrastructure equipment that operates on power from an AC power supply. This control system is suitable for installation in home appliances, etc.

As shown in FIG. 7, the control system 600 receives power supplied from, for example, an external three-phase AC power source (power source) 601, and includes an AC/DC converter 602, an inverter 604, a motor (to be driven) 605, It has a drive control unit 606, which can be mounted on various devices (described later). The three-phase AC power supply 601 is, for example, a power generation facility of an electric power company (a thermal power plant, a hydroelectric power plant, a geothermal power plant, a nuclear power plant, etc.), and its output is stepped down via a substation and supplied as an AC voltage. be. In addition, for example, in the form of a private power generator or the like, it is installed in a building or in a nearby facility and supplied by a power cable. AC/DC converter 602 is a voltage conversion device that converts AC voltage to DC voltage, and converts AC voltage of 100V or 200V supplied from three-phase AC power supply 601 to a predetermined DC voltage. Specifically, the voltage is converted into a generally used desired DC voltage such as 3.3V, 5V, or 12V. If the object to be driven is a motor, conversion to 12V is performed. A single-phase AC power supply can be used instead of the three-phase AC power supply. In that case, the same system configuration can be achieved by using a single-phase input AC/DC converter.

Inverter 604 converts the DC voltage supplied from AC/DC converter 602 into a three-phase AC voltage by switching operation, and outputs the three-phase AC voltage to motor 605 . The form of the motor 604 differs depending on the object to be controlled, but if the object to be controlled is a train, it drives the wheels; if it is factory equipment, it drives pumps and various power sources; It is a three-phase AC motor, and is rotationally driven by a three-phase AC voltage output from inverter 604, and transmits its rotational driving force to a drive target (not shown).

For example, in home appliances, there are many driven objects that can be directly supplied with the DC voltage output from the AC/DC converter 602 (for example, personal computers, LED lighting equipment, video equipment, audio equipment, etc.). Inverter 604 is no longer required in control system 600, and as shown in FIG. 7, DC voltage is supplied from AC/DC converter 602 to the driven object. In this case, for example, a personal computer is supplied with a DC voltage of 3.3V, and an LED lighting device is supplied with a DC voltage of 5V.

On the other hand, various sensors (not shown) are used to measure actual values such as the rotational speed and torque of the object to be driven, or the temperature and flow rate of the surrounding environment of the object to be driven. At the same time, the output voltage value of inverter 604 is also input to drive control section 606 . Based on these measurement signals, drive control section 606 gives a feedback signal to inverter 604 to control the switching operation of the switching element. As a result, the AC voltage applied to the motor 605 by the inverter 604 is corrected instantaneously, so that the operation control of the object to be driven can be accurately executed, and stable operation of the object to be driven is realized. Further, as described above, when the object to be driven can be driven with a DC voltage, it is possible to feedback-control AC/DC converter 602 instead of feedback to the inverter.

FIG. 8 shows the circuit configuration of FIG. As shown in the figure, the semiconductor device according to the embodiment of the present invention is employed as a Schottky barrier diode in an AC/DC converter 602 and an inverter 604 for switching control. The AC/DC converter 602 uses, for example, a Schottky barrier diode circuit configured in a bridge shape, and performs DC conversion by converting and rectifying the negative voltage component of the input voltage into a positive voltage. Also, the inverter 604 is incorporated in the switching circuit in the IGBT and performs switching control. A capacitor (such as an electrolytic capacitor) is interposed between the AC/DC converter 602 and the inverter 604 to stabilize the voltage.

Further, as indicated by the dotted line in FIG. 8, the driving control unit 606 is provided with an operation unit 607 made up of a CPU and a storage unit 608 made up of a non-volatile memory. The signal input to the drive control unit 606 is supplied to the calculation unit 607, and programmed calculation is performed as necessary to generate a feedback signal for each semiconductor element. Further, the storage unit 608 temporarily holds the result of calculation by the calculation unit 607, accumulates physical constants and functions required for drive control in the form of a table, and outputs them to the calculation unit 607 as appropriate. The calculation unit 607 and the storage unit 608 can employ known configurations, and their processing capabilities can be arbitrarily selected.

In such a control system 600, as in the control system 500 shown in FIGS. 5 and 6, the rectifying operation and switching operation of the AC/DC converter 602 and the inverter 604 are performed by diodes, switching elements such as thyristors and power transistors. , IGBT, MOSFET, etc. are used. Switching characteristics are improved by using gallium oxide (Ga ₂ O ₃ ), particularly corundum type gallium oxide (α-Ga ₂ O ₃ ), as the material for these semiconductor elements. Furthermore, by applying the semiconductor device according to the embodiment of the present invention, extremely good switching characteristics can be expected, and further miniaturization and cost reduction of the control system 600 can be realized. That is, AC/DC converter 602 and inverter 604 can each be expected to have the effect of the present invention. can be expected.

7 and 8 illustrate the motor 605 as an object to be driven, but the object to be driven is not necessarily limited to mechanically operating devices, and many devices requiring AC voltage can be targeted. In the control system 600, as long as the drive object is driven by inputting power from an AC power supply, it can be applied to infrastructure equipment (for example, power equipment such as buildings and factories, communication equipment, traffic control equipment, water and sewage treatment). Equipment, system equipment, labor-saving equipment, trains, etc.) and home appliances (e.g., refrigerators, washing machines, personal computers, LED lighting equipment, video equipment, audio equipment, etc.). can.

1 circuit board (first board)
2, 3 Semiconductor device
4 First metal substrate
5 Second metal substrate
6, 7, 9, 10, 17, 18, 22 Via
8 Third metal substrate (second substrate)
11 through hole
12a, 12b, 12c Gap
13 Peripheral substrate (third substrate)
14 Heat conduction member (heat conduction part)
15, 16 Outer substrate
16 gate resistor
19 resin layer
20a, 20b, 20c, 20d Heat transfer member (heat transfer part)
21 shielding layer
23 Fourth metal plate
24 Heat conduction member (heat conduction part)
110, 120 Semiconductor equipment
500 control system
501 battery (power supply)
502 Boost Converter
503 Buck Converter
504 Inverter
505 motor (driven)
506 drive controller
507 Calculator
508 Memory
600 control system
601 Three-phase AC power supply (power supply)
602 AC/DC converter
604 Inverter
605 motor (driven)
606 drive controller
607 Calculator
608 memory

Similarly, peripheral substrates 15 (fourth substrates) 16 are provided around the first metal substrate 4 and the second metal substrate 5 with predetermined gaps 12b and 12c interposed therebetween. The thickness and constituent materials of the peripheral substrates 15 and 16 are the same as those of the first and second metal substrates 4 and 5 . The dimension of the gap 12a and the dimensions of the gaps 12b and 12c may be the same or different, but in the present invention, it is more desirable that the size of the gap 12a is set small.

1 circuit board (first board)
2, 3 Semiconductor device
4 First metal substrate
5 Second metal substrate
6, 7, 9, 10, 17, 18, 22 Via
8 Third metal substrate (second substrate)
11 through hole
12a, 12b, 12c Gap
13 Peripheral substrate (third substrate)
14 Heat conduction member (heat conduction part)
15 Peripheral substrate (fourth substrate)
16 Outer substrate
1 9 Resin layer
20a, 20b, 20c, 20d Heat transfer member (heat transfer part)
21 shielding layer
23 Fourth metal plate
24 Heat conduction member (heat conduction part)
110, 120 Semiconductor equipment
500 control system
501 battery (power supply)
502 Boost Converter
503 Buck Converter
504 Inverter
505 motor (driven)
506 drive controller
507 Calculator
508 Memory
600 control system
601 Three-phase AC power supply (power supply)
602 AC/DC converter
604 Inverter
605 motor (driven)
606 drive controller
607 Calculator
608 memory

Claims (16)

A semiconductor device comprising a laminate having at least one semiconductor element disposed between a first substrate and a second substrate,
Thermally connected to a third substrate different from the first substrate and the second substrate in the vicinity of the semiconductor element and at substantially the same height in the stacking direction as the first substrate. A semiconductor device, comprising: a conductive portion; wherein the thermal conductive portion is electrically insulated from the semiconductor element; and the thermal conductive portion is arranged around the semiconductor element. 2. The semiconductor device according to claim 1, wherein said heat conducting portion is continuously arranged around said semiconductor element. 2. The semiconductor device according to claim 1, wherein said heat conducting portion is intermittently arranged around said semiconductor element. 2. The semiconductor device according to claim 1, wherein said heat conducting portion is arranged along a side surface of said semiconductor element. 5. The semiconductor device according to claim 4, wherein the side surface of said heat conducting portion is arranged substantially equidistant from the side surface of said semiconductor element. 2. The semiconductor device according to claim 1, wherein the heat conducting portion radiates heat received at the side surface in a direction perpendicular to the side surface. 7. The semiconductor device according to claim 6, wherein said heat conducting portion is made of a thermally isotropic material. 2. The semiconductor device according to claim 1, wherein said heat conducting portion is made of a material containing copper (Cu) as a main component. 2. The semiconductor device according to claim 1, wherein as said semiconductor elements, a first semiconductor element and a second semiconductor element are arranged between said second substrate and said second substrate. 10. The semiconductor device according to claim 9, wherein said heat conducting portion is arranged to surround said first semiconductor element and said second semiconductor element. 2. The semiconductor device according to claim 1, wherein said third substrate is electrically insulated from said first substrate and said second substrate. The semiconductor element is provided on the semiconductor layer, a first electrode provided on a first surface of the semiconductor layer, and a second surface opposite to the first surface of the semiconductor layer. 2. The semiconductor device according to claim 1, further comprising a second electrode, wherein said second electrode and said second substrate are electrically connected through vias. 2. The semiconductor device according to claim 1, wherein an electrically insulating material is interposed between said heat conducting portion and said semiconductor element. 2. The semiconductor device according to claim 1, wherein the heat of said heat conducting portion is transferred in said stacking direction. A power converter using the semiconductor device according to claim 1 . A control system using the semiconductor device according to claim 1 .

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