JP2022108472A - Imaging apparatus and electronic apparatus - Google Patents

Abstract

To suppress the degradation of image quality caused by a vibration.SOLUTION: An imaging apparatus includes a photoelectric conversion part which is provided in each of a plurality of pixels and outputs an electrical signal photoelectrically converted within a period corresponding to the moving speed of a relatively moving subject and an operation part which accumulates the electrical signal for each color of the plurality of pixels. Two pixels for photoelectrically converting light of different colors are arranged without a clearance along the relative movement direction of the subject.SELECTED DRAWING: Figure 15

Description

Embodiments according to the present disclosure relate to imaging devices and electronic devices.

BACKGROUND ART Time Delay Integration (TDI) sensors are used in fields such as FA (Factory Automation) and aerial photography. This TDI sensor is a sensor that performs TDI processing that integrates the amount of charge while shifting the time according to the moving speed of the object (see Patent Document 1).

Japanese translation of PCT publication No. 2014-510447

However, for example, when implementing a TDI color sensor in a CCD (Charge Coupled Device) structure, it is necessary to arrange an output circuit between each color group such as red group, green group and blue group. That is, an inter-color gap occurs between color groups. In CCD structures, it is difficult to suppress intercolor gaps. If an inter-color gap is formed, there is a problem that the accuracy of the restored image is lowered due to the color deviation caused by the vibration in the direction perpendicular to the traveling direction of the document (subject) when the TDI color sensor reads the document (subject). In other words, there is a possibility that the image quality of the TDI color sensor will deteriorate due to vibrations during reading.

Accordingly, the present disclosure provides an imaging device and an electronic device capable of suppressing deterioration of image quality due to vibration.

In order to solve the above problems, according to the present disclosure,
a photoelectric conversion unit provided in each of the plurality of pixels for outputting an electrical signal photoelectrically converted within a period corresponding to the moving speed of a relatively moving subject;
a computing unit that integrates the electrical signals for each color of the plurality of pixels;
An imaging device is provided in which the two pixels photoelectrically converting light of different colors are arranged without a gap along the relative movement direction of the subject.

a first pixel region including one or more pixels photoelectrically converting light of a first color; and a second pixel region including one or more pixels photoelectrically converting light of a second color different from the first color. , and a third pixel region including the one or more pixels photoelectrically converting light of a third color different from the first color and the second color, without gaps along the relative movement direction of the subject. may be placed.

Each of the first pixel region, the second pixel region, and the third pixel region includes one or more pixels in a first direction, which is a direction in which the subject is relatively moved, and One or more of the pixels may be included in a second intersecting direction.

the first pixel region, the second pixel region, and the third pixel region are arranged without being mixed in the second direction;
the first pixel region and the second pixel region are arranged without gaps in the first direction;
The second pixel region and the third pixel region may be arranged without a gap in the first direction.

the first pixel region, the second pixel region, and the third pixel region are mixedly arranged in the first direction and the second direction;
the first pixel region and the second pixel region are arranged without gaps in the first direction;
The second pixel region and the third pixel region may be arranged without a gap in the first direction.

The first pixel area, the second pixel area, and the third pixel area may be arranged in a Bayer array.

The pixel has a color filter corresponding to a wavelength band of light to be photoelectrically converted,
The two color filters corresponding to colors different from each other may be arranged without a gap along the direction of relative movement of the subject.

the first pixel region has one or more pixels having a first color filter that transmits light of the first color;
the second pixel region has one or more pixels having a second color filter that transmits the light of the second color;
the third pixel region has one or more pixels having a third color filter that transmits light of the third color;
The first color filter, the second color filter, and the third color filter may be arranged without gaps along a first direction, which is a relative moving direction of the subject.

the first color filter, the second color filter, and the third color filter are arranged without being mixed in a second direction that intersects the first direction;
the first color filter and the second color filter are arranged without gaps in the first direction;
The second color filter and the third color filter may be arranged without a gap in the first direction.

the first color filter, the second color filter, and the third color filter are mixedly arranged in the first direction and in a second direction intersecting the first direction;
the first color filter and the second color filter are arranged without gaps in the first direction;
The second color filter and the third color filter may be arranged without a gap in the first direction.

The first color filter, the second color filter, and the third color filter may be arranged in a Bayer array.

further comprising an ADC (Analog to Digital Converter) that is arranged for each of the plurality of pixels and converts the electrical signal into a digital signal;
The computing unit may integrate the digital signals for each color.

a first chip on which the photoelectric conversion unit is arranged;
A second chip stacked with the first chip and arranged with the ADC may further be provided.

The ADC may be arranged at a position overlapping with the photoelectric conversion section in the stacking direction.

According to the present disclosure, an imaging device;
a moving unit that moves the subject of the imaging device at a predetermined speed,
The imaging device is
a photoelectric conversion unit provided in each of the plurality of pixels for outputting an electrical signal photoelectrically converted within a period corresponding to the moving speed of a relatively moving subject;
a computing unit that integrates the electrical signals for each color of the plurality of pixels;
An electronic device is provided in which the two pixels photoelectrically converting light of different colors are arranged without a gap along the relative movement direction of the subject.

It is a block diagram showing an example of 1 composition of an imaging device in a 1st embodiment of this art. It is a figure for explaining an example of use of an imaging system in a 1st embodiment of this art. It is a figure showing an example of lamination structure of a solid-state image sensor in a 1st embodiment of this art. It is a block diagram showing a configuration example of a light receiving chip in the first embodiment of the present technology. 1 is a block diagram showing a configuration example of a circuit chip according to a first embodiment of the present technology; FIG. It is a figure which shows one structural example of the pixel AD (Analog to Digital) conversion part in 1st Embodiment of this technique. 1 is a block diagram showing a configuration example of an ADC (Analog to Digital Converter) according to a first embodiment of the present technology; FIG. 1 is a circuit diagram showing one configuration example of a differential input circuit and a positive feedback circuit according to a first embodiment of the present technology; FIG. 1 is a circuit diagram showing a configuration example of a pixel circuit and an amplifier circuit according to a first embodiment of the present technology; FIG. It is a top view showing an example of a layout of an element in a pixel in a 1st embodiment of this art. It is a block diagram showing an example of composition of a signal processing circuit in a 1st embodiment of this art. 1 is a circuit diagram showing a configuration example of an arithmetic circuit according to a first embodiment of the present technology; FIG. It is a figure showing an example of TDI processing in a 1st embodiment of this art. It is an example of a flow chart which shows an example of operation of an imaging system in a 1st embodiment of this art. It is a figure showing an example of composition of an imaging device in a 1st embodiment of this art. It is a figure explaining the influence of a vibration when an inter-color gap is large. It is a figure explaining the influence of a vibration when an inter-color gap is small. It is a figure explaining the gap between colors. It is a figure explaining the relationship between an inter-color gap and vibration. It is a graph which shows a transfer function. It is a figure which shows an example of a structure of the image pick-up element in a 1st modification. It is a figure which shows an example of a structure of the imaging device in a 2nd modification. It is a figure showing an example of composition of an imaging device in a 2nd embodiment of this art.

Embodiments of an imaging device and an electronic device will be described below with reference to the drawings. Although the main components of the imaging device and the electronic device will be mainly described below, the imaging device and the electronic device may have components and functions that are not illustrated or described. The following description does not exclude components or features not shown or described.

<First Embodiment>
[Configuration example of imaging device]
FIG. 1 is a block diagram showing a configuration example of an imaging device 100 according to the first embodiment of the present technology. This imaging device 100 is a device for capturing image data, and includes an optical section 110 , a solid-state imaging device 200 , a storage section 120 , a control section 130 and a communication section 140 .

The optical section 110 collects incident light and guides it to the solid-state imaging device 200 . The solid-state imaging device 200 captures image data. The solid-state imaging device 200 supplies image data to the storage section 120 via the signal line 209 .

The storage unit 120 stores image data. The control unit 130 controls the solid-state imaging device 200 to capture image data. The control unit 130 supplies a vertical synchronization signal VSYNC indicating imaging timing to the solid-state imaging device 200 via the signal line 208, for example.

The communication unit 140 reads image data from the storage unit 120 and transmits it to the outside.

FIG. 2 is a diagram for explaining a usage example of the imaging device 100 according to the first embodiment of the present technology. As illustrated in the figure, the imaging device 100 is used in a factory or the like provided with a belt conveyor 510 .

FIG. 2 is also a diagram showing the electronic device 1 of the present technology. The electronic device 1 includes an imaging device 100 and a belt conveyor (moving unit) 510 . The electronic device 1 may include a housing (not shown) or the like for fixing the imaging device 100 .

A belt conveyor 510 moves a subject 511 in a predetermined direction at a constant speed. The imaging device 100 is fixed in the vicinity of the belt conveyor 510 and images this subject 511 to generate image data. The image data is used, for example, for inspection such as the presence or absence of defects. This implements FA.

Note that the imaging device 100 captures an image of the subject 511 moving at a constant speed, but the configuration is not limited to this. The imaging device 100 may move at a constant speed with respect to a subject such as an aerial shot to capture an image.

[Configuration example of solid-state imaging device]
FIG. 3 is a diagram showing an example of the layered structure of the solid-state imaging device 200 according to the first embodiment of the present technology. This solid-state imaging device 200 includes a circuit chip (second chip) 202 and a light receiving chip (first chip) 201 laminated on the circuit chip 202 . These chips are electrically connected through connections such as vias. In addition to vias, Cu--Cu bonding and bumps can also be used for connection.

FIG. 4 is a block diagram showing a configuration example of the light receiving chip 201 according to the first embodiment of the present technology. The light receiving chip 201 is provided with a pixel array section 210 and a peripheral circuit 212 .

A plurality of pixel circuits 220 are arranged in a two-dimensional grid in the pixel array section 210 . Also, the pixel array section 210 is divided into a plurality of pixel blocks 211 . In each of these pixel blocks 211, for example, 4 rows×2 columns of pixel circuits 220 are arranged. In addition, for each pixel circuit 220, a plurality of transistors are further arranged outside the pixel circuit 220, but these transistors are omitted in the figure for convenience of description.

A circuit that supplies a DC (Direct Current) voltage, for example, is arranged in the peripheral circuit 212 .

FIG. 5 is a block diagram showing a configuration example of the circuit chip 202 according to the first embodiment of the present technology. A DAC (Digital to Analog Converter) 251 , a pixel drive circuit 252 , a time code generator 253 , a pixel AD converter 254 and a vertical scanning circuit 255 are arranged in this circuit chip 202 . Further, in the circuit chip 202, a control circuit 256, a signal processing circuit 400, an image processing circuit 260, and an output circuit 257 are arranged.

The DAC 251 generates a reference signal by DA (Digital to Analog) conversion over a predetermined AD conversion period. For example, a sawtooth ramp signal is used as a reference signal. The DAC 251 supplies the reference signal to the pixel AD converter 254 .

The time code generator 253 generates a time code indicating the time within the AD conversion period. The time code generator 253 is implemented by, for example, a counter. A Gray code counter, for example, is used as the counter. The time code generator 253 supplies the time code to the pixel AD converter 254 .

The pixel drive circuit 252 drives each of the pixel circuits 220 to generate analog pixel signals.

The pixel AD converter 254 performs AD conversion for converting each analog signal (that is, pixel signal) of the pixel circuit 220 into a digital signal. This pixel AD converter 254 is divided into a plurality of clusters 300 . A cluster 300 is provided for each pixel block 211 and converts an analog signal in the corresponding pixel block 211 into a digital signal.

The pixel AD conversion unit 254 generates image data in which digital signals are arranged by AD conversion as a frame, and supplies the frame to the signal processing circuit 400 .

The vertical scanning circuit 255 drives the pixel AD converter 254 to perform AD conversion.

The signal processing circuit 400 performs predetermined signal processing on frames. As signal processing, various types of processing including CDS (Correlated Double Sampling) processing and TDI processing are performed. The signal processing circuit 400 supplies the processed frame to the image processing circuit 260 .

The image processing circuit 260 performs predetermined image processing on the frames from the signal processing circuit 400 . As image processing, image recognition processing, black level correction processing, image correction processing, demosaicing processing, and the like are executed. The image processing circuit 260 supplies the processed frame to the output circuit 257 .

The output circuit 257 outputs the frame after the image processing to the outside.

The control circuit 256 controls operation timings of the DAC 251, the pixel driving circuit 252, the vertical scanning circuit 255, the signal processing circuit 400, the image processing circuit 260 and the output circuit 257 in synchronization with the vertical synchronization signal VSYNC.

[Configuration example of pixel AD conversion unit]
FIG. 6 is a diagram illustrating a configuration example of the pixel AD converter 254 according to the first embodiment of the present technology. A plurality of ADCs 310 are arranged in a two-dimensional grid in the pixel AD conversion unit 254 . ADC 310 is arranged for each pixel circuit 220 . When the pixel circuit 220 has N rows (N is an integer) and M columns (M is an integer), N×M ADCs 310 are arranged.

Each cluster 300 has the same number of ADCs 310 as the pixel circuits 220 in the pixel block 211 . When 4 rows×2 columns of pixel circuits 220 are arranged in the pixel block 211 , 4 rows×2 columns of ADCs 310 are also arranged in the cluster 300 .

The ADC 310 performs AD conversion on analog pixel signals generated by the corresponding pixel circuits 220 . This ADC 310 compares the pixel signal and the reference signal in the AD conversion and holds the time code when the comparison result is inverted. Then, the ADC 310 outputs the held time code as a digital signal after AD conversion.

A repeater unit 360 is arranged for each column of the cluster 300 . When the number of columns in the cluster 300 is M/2, M/2 repeater units 360 are arranged. The repeater section 360 transfers the time code. Repeater section 360 transfers the time code from time code generation section 253 to ADC 310 . The repeater section 360 also transfers the digital signal from the ADC 310 to the signal processing circuit 400 . This digital signal transfer is also referred to as "reading" the digital signal.

Also, in the figure, the numbers in parentheses indicate an example of the reading order of the digital signals of the ADC 310 . For example, the digital signals in the odd-numbered columns of the first row are read first, and the digital signals in the even-numbered columns of the first row are read second. The digital signals in the odd-numbered columns of the second row are read third, and the digital signals in the even-numbered columns of the second row are read third. Thereafter, similarly, the digital signals of odd-numbered columns and even-numbered columns of each row are read out in order.

Although the ADC 310 is arranged for each pixel circuit 220, the configuration is not limited to this. A configuration in which a plurality of pixel circuits 220 share one ADC 310 may be employed.

[Example of configuration of ADC]
FIG. 7 is a block diagram showing a configuration example of the ADC 310 according to the first embodiment of the present technology. This ADC 310 comprises a differential input circuit 320 , a positive feedback circuit 330 , a latch control circuit 340 and a plurality of latch circuits 350 .

An amplifier circuit 230 is arranged between the pixel circuit 220 and the ADC 310 . The amplifier circuit 230 amplifies the pixel signal from the pixel circuit 220 and supplies it to the ADC 310 . A circuit composed of the pixel circuit 220 and the amplifier circuit 230 functions as one pixel.

In addition, the pixel circuit 220 and the amplifier circuit 230 and a part of the differential input circuit 320 are arranged on the light receiving chip 201 , and the rest of the differential input circuit 320 and the subsequent circuits are arranged on the circuit chip 202 . be.

A differential input circuit (comparator) 320 compares the pixel signal from the amplifier circuit 230 and the reference signal from the DAC 251 . This differential input circuit 320 supplies a comparison result signal indicating the comparison result to the positive feedback circuit 330 .

The positive feedback circuit 330 adds a part of the output to the input (comparison result signal) and supplies it to the latch control circuit 340 as the output signal VCO.

The latch control circuit 340 causes the plurality of latch circuits 350 to hold the time code when the output signal VCO is inverted according to the control signal xWORD from the vertical scanning circuit 255 .

The latch circuit 350 holds the time code from the repeater section 360 under the control of the latch control circuit 340 . Latch circuits 350 are provided for the number of bits of the time code. For example, if the time code is 15 bits, 15 latch circuits 350 are arranged within the ADC 310 . Also, the held time code is read by the repeater section 360 as a digital signal after AD conversion.

With the configuration illustrated in the figure, the ADC 310 converts the pixel signal from the amplifier circuit 230 into a digital signal.

[Configuration example of differential input circuit and positive feedback circuit]
FIG. 8 is a circuit diagram showing one configuration example of the pixel circuit 220, the differential input circuit 320, and the positive feedback circuit 330 according to the first embodiment of the present technology.

The differential input circuit 320 includes pMOS (p-channel Metal Oxide Semiconductor) transistors 321 , 324 and 326 . The differential input circuit 320 also includes nMOS (n-channel MOS) transistors 322 , 323 , 325 , 327 and 328 . Of these, the nMOS transistors 322 , 323 , 325 and 328 are arranged on the light receiving chip 201 and the rest are arranged on the circuit chip 202 .

NMOS transistors 322 and 325 form a differential pair, and the sources of these transistors are commonly connected to the drain of nMOS transistor 323 . Also, the drain of the nMOS transistor 322 is connected to the drain of the pMOS transistor 321 and the gates of the pMOS transistors 321 and 324 . The drain of nMOS transistor 325 is connected to the drain of pMOS transistor 324 and the gate of pMOS transistor 326 . A reference signal REF from the DAC 251 is input to the gate of the nMOS transistor 322 .

A predetermined bias voltage Vb is applied to the gate of the nMOS transistor 323 and a predetermined ground voltage is applied to the source of the nMOS transistor 323 .

A pixel signal SIG from the amplifier circuit 230 is input to the gate of the nMOS transistor 325 .

PMOS transistors 321, 324 and 326 form a current mirror circuit. Power supply voltage VDDH is applied to the sources of pMOS transistors 321 , 324 and 326 . This power supply voltage VDDH is higher than the power supply voltage VDDL described later.

A power supply voltage VDDL is applied to the gate of the nMOS transistor 327 . Also, the drain of the nMOS transistor 327 is connected to the drain of the pMOS transistor 326 and the source is connected to the positive feedback circuit 330 .

The nMOS transistor 328 short-circuits the gate and drain of the nMOS transistor 325 according to the auto-zero signal AZ from the pixel drive circuit 252 .

Positive feedback circuit 330 includes pMOS transistors 331 , 332 , 334 and 335 and nMOS transistors 333 , 336 and 337 . PMOS transistors 331 and 332 and nMOS transistor 333 are connected in series to power supply voltage VDDL. A driving signal INI2 from the vertical scanning circuit 255 is input to the gate of the pMOS transistor 331 . A connection point between the pMOS transistor 332 and the nMOS transistor 333 is connected to the source of the nMOS transistor 327 .

A ground voltage is applied to the source of the nMOS transistor 333, and the drive signal INI1 from the vertical scanning circuit 255 is input to the gate.

PMOS transistors 334 and 335 are connected in series to power supply voltage VDDL. Also, the drain of pMOS transistor 335 is connected to the gate of pMOS transistor 332 and the drains of nMOS transistors 336 and 337 . A control signal TESTVCO from the vertical scanning circuit 255 is input to the gates of the pMOS transistor 335 and the nMOS transistor 337 . The gates of pMOS transistor 334 and nMOS transistor 336 are connected to the connection point of pMOS transistor 332 and nMOS transistor 333 .

A connection point between the pMOS transistor 335 and the nMOS transistor 337 outputs an output signal VCO. A ground voltage is applied to the sources of the nMOS transistors 336 and 337 .

Note that each of the differential input circuit 320 and the positive feedback circuit 330 is not limited to the circuit illustrated in FIG. 8 as long as it has the function described in FIG.

[Configuration example of amplifier circuit and pixel circuit]
FIG. 9 is a circuit diagram showing one configuration example of the pixel circuit 220 and the amplifier circuit 230 according to the first embodiment of the present technology.

The pixel circuit 220 includes an exhaust transistor 221 , a photoelectric conversion element 222 , a transfer transistor 223 , a reset transistor 224 , a capacitor 225 , a gain control transistor 226 and a floating diffusion layer 227 . As the discharge transistor 221, the transfer transistor 223, the reset transistor 224 and the gain control transistor 226, nMOS transistors are used, for example.

The discharge transistor 221 discharges charges accumulated in the photoelectric conversion element 222 according to the drive signal OFG from the pixel drive circuit 252 . The photoelectric conversion element 222 generates charges by photoelectric conversion.

The transfer transistor 223 transfers charges from the photoelectric conversion element 222 to the floating diffusion layer 227 according to the transfer signal TG from the pixel drive circuit 252 .

The reset transistor 224 initializes the floating diffusion layer 227 according to the reset signal RST from the pixel drive circuit 252 .

Capacitor 225 is inserted between the connection node of reset transistor 224 and gain control transistor 226 and the ground terminal.

The gain control transistor 226 controls the analog gain with respect to the voltage of the floating diffusion layer 227 according to the control signal FDG from the pixel drive circuit 252 . By reducing the voltage of the floating diffusion layer 227 by analog gain and outputting it, the amount of signal handled by the pixel circuit 220, that is, the amount of saturation signal can be increased.

The floating diffusion layer 227 accumulates the transferred charge and generates a voltage corresponding to the amount of charge.

The amplifier circuit 230 also includes nMOS transistors 231 and 232 and a capacitor 233 . NMOS transistors 231 and 232 are connected in series between the power supply and the ground terminal. The gate of the nMOS transistor 231 on the power supply side is connected to the floating diffusion layer 227 . A predetermined bias voltage VB2 is applied to the gate of the nMOS transistor 232 on the ground side.

A connection node of nMOS transistors 231 and 232 is connected to differential input circuit 320 via capacitor 233 . Assuming that the gate-source capacitance of the nMOS transistor 325 on the pixel signal side of the differential pair in the differential input circuit 320 is Cgs, the capacitance value of the capacitor 233 is considerably larger than the gate-source capacitance Cgs. set. If the floating diffusion layer 227 and the gate of the nMOS transistor 325 are directly connected, the fluctuation of the floating diffusion layer 227 increases due to the coupling between the gate-source capacitance Cgs and the floating diffusion layer 227, and the AD conversion period becomes longer. It may be prolonged. However, by adding capacitance 233, the effect of this coupling can be mitigated.

Note that each of the pixel circuit 220 and the amplifier circuit 230 is not limited to the circuit illustrated in FIG. 9 as long as it has the function described in FIG.

FIG. 10 is a plan view showing an example layout of elements in a pixel according to the first embodiment of the present technology; The optical axis of incident light is the Z-axis, the predetermined axis perpendicular to the Z-axis is the X-axis, and the axis perpendicular to the Z-axis and the X-axis is the Y-axis.

A plurality of photoelectric conversion elements 222 of N rows and M columns are arranged in a two-dimensional lattice on the light receiving surface, that is, the XY plane. Let Y1 be the size of these photoelectric conversion elements 222 in the Y-axis direction. In the XY plane, the M photoelectric conversion elements 222 are arranged adjacently without gaps along the X-axis direction. A set of M photoelectric conversion elements 222 arranged in the X-axis direction and a set of digital signals corresponding to them are hereinafter referred to as a "line". On the other hand, along the Y-axis direction, the N photoelectric conversion elements 222 are arranged at intervals of Y2. In other words, the N lines are spaced Y2 apart. Here, it is assumed that the following relationship holds between the size Y1 and the interval Y2.
Y1≦Y2 Expression 1

In the figure, the interval Y2 has the same value as the size Y1. Note that, as exemplified in Equation 1, the interval Y2 can be made larger than the size Y1. When the interval Y2 is made larger than the size Y1, the interval Y2 is set to an integral multiple of Y1. As the interval Y2 is increased, the size of the lower ADC 310 in the Y-axis direction can be increased. can.

Further, in the Y-axis direction, a transistor placement region 241 is provided in a gap region 240 between each of the N photoelectric conversion elements 222 . A predetermined number of transistors, a floating diffusion layer 227 and capacitors 233 and 225 are arranged in this transistor arrangement region 241 . The predetermined number of transistors includes drain transistor 221 , reset transistor 224 and gain control transistor 226 and nMOS transistors 231 , 232 , 322 , 323 and 325 . In other words, the transistors in the differential input circuit 320 illustrated in FIG. 8 and the transistors in the pixel circuit 220 and the amplifier circuit 230 illustrated in FIG. 9 are arranged in the transistor arrangement region 241 . These transistors generate a signal (a pixel signal or a signal obtained by amplifying the pixel signal) according to the amount of charge generated by one of the plurality of photoelectric conversion elements 222, as described with reference to FIG. do. A transfer transistor 223 is arranged between the transistor arrangement region 241 and the photoelectric conversion element 222 .

Here, the photoelectric conversion elements 222 of N rows and M columns are arranged without gaps along the X-axis direction and the Y-axis direction, and various transistors such as the discharge transistor 221 and the floating diffusion layer 227 are arranged on the photoelectric conversion elements 222 . Assume a comparative example that is placed around. In this comparative example, the light receiving area of the photoelectric conversion element 222 becomes narrower as the number of transistors increases.

On the other hand, as illustrated in the figure, in a configuration in which N photoelectric conversion elements 222 are arranged at predetermined intervals in the Y-axis direction, transistors and the like can be arranged in the gap region 240. , the light receiving area can be made wider than in the comparative example. By enlarging the light receiving area, the sensitivity of the pixel can be improved. Further, since more transistors can be arranged than in the comparative example, additional circuits such as the amplifier circuit 230 can be further arranged in addition to the pixel circuit 220 .

Also, in the example shown in FIG. 10 , one pixel P includes the photoelectric conversion element 222 and the gap region 240 .

[Configuration example of signal processing circuit]
FIG. 11 is a block diagram showing a configuration example of the signal processing circuit 400 according to the first embodiment of the present technology. This signal processing circuit 400 comprises a plurality of selectors 405 , a plurality of arithmetic circuits 410 , a CDS frame memory 440 and a TDI frame memory 450 .

A selector 405 is arranged for each column of the cluster 300 , in other words, for each repeater section 360 . When two columns of ADCs 310 are arranged in cluster 300, selector 405 is arranged every two columns. Also, the arithmetic circuit 410 is arranged for each column of the ADC 310 . When the ADC 310 has M columns, M/2 selectors 405 and M arithmetic circuits 410 are arranged.

As described above, the repeater unit 360 sequentially outputs the odd-numbered digital signal and the even-numbered digital signal.

The selector 405 selects the output destination of the digital signal under the control of the control circuit 256 . When the repeater unit 360 outputs an odd-numbered column, the selector 405 outputs a digital signal to the arithmetic circuit 410 corresponding to the odd-numbered column. On the other hand, when an even-numbered column is output, the selector 405 outputs a digital signal to the arithmetic circuit 410 corresponding to that even-numbered column.

The arithmetic circuit 410 performs CDS processing and TDI processing on the digital signal from the selector 405 .

Here, the digital signal includes a P-phase level and a D-phase level. The P-phase level indicates the level when the pixel circuit 220 is initialized by the reset signal RST. On the other hand, the D-phase level indicates a level corresponding to the amount of exposure when charges are transferred by the transfer signal TG. The P-phase level is also called the reset level, and the D-phase level is also called the signal level.

In the CDS processing, the M arithmetic circuits 410 cause the CDS frame memory 440 to hold the P-phase frame in which the P-phase levels are arranged. Then, the M arithmetic circuits 410 obtain the difference between the P-phase level and the D-phase level for each pixel, and generate a CDS frame in which the difference data are arranged. On the other hand, in the TDI processing, the M arithmetic circuits 410 cause the TDI frame memory 450 to hold the frames after the CDS processing, and update the TDI frame memory 450 with the integrated data.

Also, the M arithmetic circuits 410 supply the CDS frame and the TDI frame after the TDI processing to the image processing circuit 260 .

[Configuration example of arithmetic circuit]
FIG. 12 is a circuit diagram showing a configuration example of the arithmetic circuit 410 according to the first embodiment of the present technology. This arithmetic circuit 410 comprises a TDI circuit 420 and a CDS circuit 430 . TDI circuit 420 comprises buffer 421 , selector 422 , adder 423 and switch 424 . CDS circuit 430 includes selector 431 , buffer 432 , selector 433 , subtractor 434 and switch 435 . The respective operations of selectors 422, 431 and 433 and switches 424 and 425 are controlled by control circuit 256, for example.

The selector 431 selects either the digital signal from the selector 405 or the digital signal from the TDI frame memory 450 and outputs it to the buffer 421 .

The buffer 421 delays and outputs the signal from the selector 431 .

The selector 422 selects either the digital signal from the buffer 421 or the digital signal having a decimal value of “0” and outputs it to the adder 423 .

The adder 423 adds the digital signal from the selector 422 and the digital signal from the buffer 432 . The adder 423 supplies a digital signal indicating the added value to the switch 424 as integrated data.

Switch 424 opens and closes the path between adder 423 and TDI frame memory 450 .

The buffer 432 delays and outputs the signal from the CDS frame memory 440 .

The selector 433 selects either the digital signal from the buffer 432 or the digital signal with a decimal value of “0” and outputs it to the subtractor 434 .

The subtractor 434 calculates the difference between the digital signal from the buffer 421 and the digital signal from the selector 433 . The subtractor 434 supplies a digital signal indicating the difference to the switch 435 as difference data.

Switch 435 opens and closes the path between subtractor 434 and CDS frame memory 440 .

With the configuration illustrated in the figure, the CDS circuit 430 can perform CDS processing. The TDI circuit 420 can also perform TDI processing.

FIG. 13 is a diagram illustrating an example of TDI processing in the first embodiment of the present technology; For example, assume that the CDS frame memory 440 and the TDI frame memory 450 are initialized and frame F1 is imaged first, followed by frames F2, F3, F4, F5, F6, F7 and F8 in sequence. In the figure, frame F5 and subsequent frames are omitted. Also, the arrows in the figure indicate the moving direction of the subject. As exemplified in the figure, the subject moves line by line along the Y-axis direction in the direction in which the row address increases. A gray portion between lines in the figure indicates a gap region between the lines. The gap area is assumed to be one line.

In the TDI processing, the signal processing circuit 400 integrates line L1 of frame F1, line L2 of frame F3, line L3 of frame F5, and line L4 of frame F7 after CDS processing. As described above, the subject moves line by line and the gap area is for one line, so the pattern of each line to be integrated is the same. The signal processing circuit 400 outputs the integrated line as the last line of the TDI frame.

In the TDI processing, the signal processing circuit 400 integrates the line L1 of the frame F2, the line L2 of the frame F4, the line L3 of the frame F6, and the line L4 of the frame F8 after the CDS processing. The signal processing circuit 400 outputs the accumulated line as the penultimate line of the TDI frame. Other lines are similarly generated by accumulating four lines after frame F3.

If the moving speed of the subject is fast, it is necessary to shorten the exposure time in order to prevent blurring. If the exposure time is shortened, the image may become dark, but by performing the TDI processing, it is possible to integrate a plurality of lines of the same pattern and improve the brightness. In addition, noise is reduced by the smoothing effect as the number of lines to be integrated increases. These brightness enhancements and noise reductions can improve the image quality of frames (ie, image data) compared to when TDI processing is not performed.

Although the signal processing circuit 400 integrates four lines, the number of lines to be integrated is not limited to four as long as it is two or more. In addition, the signal processing circuit 400 integrates four lines from the top line for the first eight frames, but the configuration is not limited to this. For example, if the object moves in the opposite direction, the signal processing circuit 400 may integrate four lines from the last line in the first eight frames.

In addition, although there is a one-line gap area between the lines, lines of the same pattern are integrated by alternately accumulating frames such as frames F1, F3, F5, and F7. be able to. Note that when the gap area between the lines is set to two lines or three lines, every two or three frames to be integrated may be used.

[Operation example of solid-state imaging device]
FIG. 14 is an example of a flowchart showing an example of the operation of the solid-state imaging device 200 according to the first embodiment of the present technology. This operation is started, for example, when a predetermined application for capturing an image of a frame is executed.

The pixel driving circuit 252 in the solid-state imaging device 200 drives all pixels and starts exposure at the same time (step S901). Such control of exposing all pixels at the same time is called a global shutter method.

The ADC 310 AD-converts the P-phase level immediately before the end of exposure (step S902). At the end of exposure, the ADC 310 AD-converts the D-phase level, and the arithmetic circuit 410 performs CDS processing (step S903).

The image processing circuit 260 performs predetermined image processing on the frame after CDS processing (step S904), and the arithmetic circuit 410 performs TDI processing (step S905). The image processing circuit 260 performs predetermined image processing on the frame after TDI processing (step S906), and the output circuit 257 outputs the processing result (step S907). After step S907, the solid-state imaging device 200 ends the process of imaging one frame. When continuously imaging two or more frames, steps S901 to S907 are repeatedly executed in synchronization with the vertical synchronization signal VSYNC.

As described above, according to the first embodiment of the present technology, the plurality of photoelectric conversion elements 222 are arranged at regular intervals along the Y-axis direction, and the transistors are arranged therebetween. The light-receiving area of the photoelectric conversion element 222 can be made wider than when the . Thereby, the sensitivity of the pixels can be improved.

[Color sensor]
Drawing 15 is a figure showing an example of composition of imaging device 100 in a 1st embodiment of this art.

The imaging device 100 shown in FIG. 15 is a TDI color sensor having color filters. Also, the imaging device 100 is, for example, a TDI linear image sensor. A color filter allows light in a wavelength band corresponding to a predetermined color to pass therethrough. Data addition for TDI processing is performed for each color.

A pixel P shown in FIG. 15 corresponds to the pixel P shown in FIG. The pixels P include a pixel PR arranged in the red filter (R), a pixel PG arranged in the green filter (G), and a pixel PB arranged in the blue filter (B).

In the color filter shown in FIG. 15, the color pattern is a color group arrangement. The color filters include, for example, a red filter group, a green filter group, and a blue filter group in which a plurality of red filters, green filters, and blue filters are arranged adjacent to each other.

In the example shown in FIG. 15, three pixels P of the same color are arranged in the X direction and the Y direction. However, the number of arranged pixels P is not limited to this. If the imaging device 100 is a linear sensor, for example, 1000 or 2000 pixels P are arranged side by side in the X direction. Also, for example, 16 pixels P per color are arranged in the Y direction.

One pixel P includes a photoelectric conversion element 222 . The photoelectric conversion element 222 is provided in each of the plurality of pixels P, and outputs an electrical signal photoelectrically converted within a period corresponding to the moving speed of the relatively moving subject 511 . Note that the “relative movement direction” is not limited to the case described with reference to FIG. 2, and includes the case where the imaging device 100 is moved while the subject 511 is fixed.

The ADC 310 is arranged for each of the plurality of pixels P and converts electrical signals into digital signals.

A calculation circuit (calculation unit) 410 arranged outside the pixel area integrates the electrical signals of the plurality of pixels P for each color. More specifically, arithmetic circuit 410 integrates the digital signals converted by ADC 310 for each color. Therefore, as shown in FIG. 5, the arithmetic circuit 410 in the signal processing circuit 400 integrates the digital signals output from the ADC 310 in the pixel AD converter 254 for each color.

The imaging device 100 has a laminated structure as described with reference to FIG. The ADC 310 is arranged at a position overlapping the photoelectric conversion element 222 in the stacking direction. More specifically, the differential input circuit 320 and the latch circuit 350 are arranged directly below the photoelectric conversion element 222 . A differential input circuit 320 receives a slope signal from a DAC 251 located outside the pixel area. Thereby, the ADC 310 performs single slope AD conversion. The digital value is held in the latch circuit 350 and transferred to logic circuits such as the signal processing circuit 400 every H.

Next, the details of the arrangement of the pixels P and the color filters for each color will be described.

The two pixels P photoelectrically converting light of different colors are arranged without a gap along the relative movement direction (Y direction) of the subject 511 . In the example shown in FIG. 15, the pixels PR and pixels PG that are adjacent in the Y direction are arranged so as to be in contact with each other without a gap. Pixels PG and pixels PB that are adjacent in the Y direction are arranged so as to be in contact with each other without a gap. This results in almost no inter-color gaps between pixels PR and PG and between pixels PG and PB. As a result, deterioration of image quality due to vibration can be suppressed. That is, the vibration resistance of the imaging device 100 and the electronic device 1 can be improved. Details of the vibration resistance will be described later with reference to FIGS. 16A to 19. FIG.

In the example shown in FIG. 15, a first pixel region including one or more pixels P that photoelectrically convert light of a first color and one or more pixels P that photoelectrically convert light of a second color different from the first color are provided. and a third pixel region including one or more pixels P that photoelectrically convert light of a third color different from the first and second colors, the direction of relative movement of the subject 511 (Y direction) without gaps.

In addition, the first color, the second color, and the third color are, for example, red, green, and blue, respectively, but the kind and order of the colors are not limited to this. The first pixel region, the second pixel region, and the third pixel region are regions in which, for example, one or more red pixels PR, one or more green pixels PG, and one or more blue pixels PB are arranged. , the types and order of colors are not limited to this.

Each of the first pixel region, the second pixel region, and the third pixel region includes one or more pixels P in the first direction (Y direction), which is the relative moving direction of the subject 511, and One or more pixels P are included in the intersecting second direction (X direction).

Pixels P of each color are arranged in a color group arrangement. That is, the first pixel area, the second pixel area, and the third pixel area are arranged without being mixed in the X direction. The first pixel region and the second pixel region are arranged without any gap in the Y direction. The second pixel area and the third pixel area are arranged without any gap in the Y direction.

The pixels P have color filters corresponding to wavelength bands of light to be photoelectrically converted. Two color filters corresponding to colors different from each other are arranged without a gap along the relative movement direction of the subject 511 .

The first pixel region has one or more pixels P having a first color filter that transmits light of a first color. The second pixel region has one or more pixels P having a second color filter that transmits light of a second color. The third pixel region has one or more pixels P having a third color filter that transmits light of the third color. The first color filter, the second color filter, and the third color filter are arranged without gaps along the Y direction, which is the relative movement direction of the subject 511 .

Also, the first color filter, the second color filter, and the third color filter are arranged without being mixed in the X direction that intersects the Y direction. The first color filter and the second color filter are arranged without a gap in the Y direction. The second color filter and the third color filter are arranged without gaps in the Y direction.

[Vibration resistance]
Next, the relationship between the inter-color gap of the pixel P and vibration resistance will be described.

FIG. 16A is a diagram for explaining the influence of vibration when the inter-color gap is large. FIG. 16B is a diagram illustrating the influence of vibration when the inter-color gap is small.

FIG. 16A shows an example assuming that linear sensors for monochromatic red, green, and blue are used to scan and synthesize an object at different times. In this case, the vibration V of the left and right reading positions (positions in the X direction) of the image has little correlation among the colors red, green and blue. Therefore, in the synthesized image, color shift occurs according to the difference in vibration V for each color.

FIG. 16B shows an example using linear sensors for single colors of red, green, and blue, assuming that the positions in the scanning direction (positions in the Y direction) are approximately the same among the colors. In this case, the vibration V of the left and right reading positions of the image is substantially the same for each color. That is, the correlation of the vibration V for each color is strong. Therefore, the composite image has almost no color shift.

The inter-color gap of pixel P in TDI can be considered in the same way as in FIGS. 16A and 16B. That is, the smaller the inter-color gap of the pixel P, the stronger the correlation of the vibration V between the left and right reading positions. As a result, the color deviation of the synthesized image is reduced. As a result, deterioration of image quality due to vibration can be suppressed.

FIG. 17 is a diagram for explaining the inter-color gap GC. FIG. 17 shows a pixel PR for red and a pixel PG for green as an example.

The inter-color gap GC is a value obtained by subtracting the same-color pixel distance DP from the CF-edge distance DCF, which is the distance between the color filter (CF) edge of the red filter and the CF edge of the green filter. The same-color pixel distance DP is the product of the pixel pitch and the number of same-color TDI stages. The pixel pitch indicates the distance of one pixel P in the Y direction. The same-color TDI stage number is the number of stages in the Y direction of the same-color pixels P arranged side by side, and is four stages in the example shown in FIG.

FIG. 18 is a diagram for explaining the relationship between the inter-color gap GC and vibration. In FIG. 18, for example, the TDI pixel readout interval is 1 μs, and the readout interval between the first red pixel and the first green pixel is 10 μs.

The high-frequency vibration noise NH and the low-frequency vibration noise NL shown in FIG. 18 are models according to 1/f. That is, as shown in FIG. 18, vibration noise NL with a large amplitude has a low frequency, and vibration noise NH with a small amplitude has a high frequency. Vibrational noise is defined as the simple difference of lateral (X-direction) vibrations experienced between colors. Also, since the TDI pixel can be viewed as an act of taking its average, the Laplace transform can be used to calculate the transfer function and quantify the response to the noise spectrum.

FIG. 19 is a graph showing transfer functions.

As described with reference to FIG. 18, the vibration noise spectrum NS generally indicates a vibration spectrum in which the amplitude is large when the frequency is low and the amplitude is small when the frequency is high.

The transfer function TF1 is the non-TDI transfer when the readout interval between the first red pixel and the first green pixel is 10 μs, the readout interval for one pixel is 1 μs, and four pixels are added. is a function. The transfer function TF2 is the transfer function of TDI when the readout interval between the first red pixel and the first green pixel is 10 μs, the readout interval for one pixel is 1 μs, and four pixels are added. is. The transfer function TF2 is the transfer function of TDI when the readout interval between the first red pixel and the first green pixel is 5 μs, the readout interval for one pixel is 1 μs, and four pixels are added. is.

The transfer function shows undulating behavior with frequency. A value of zero in the transfer function indicates that the difference in vibration between the first red pixel and the first green pixel is zero when, for example, the frequencies take the respective maximum vibration values. That is, the residual vibration noise becomes zero due to the correspondence between the readout time difference between the first red pixel and the first green pixel and the vibration frequency. For example, if the frequency shifts and the vibration difference does not become zero, the transfer function will have a finite value. The transfer function goes to zero periodically by multiples of the frequency.

The final residual noise is the integral (area) of the product of the vibration noise spectrum NS and the transfer functions TF1 to TF3. For example, if the unit of area is arbitrary, the areas of multiplication of the vibration noise spectrum NS and the transfer functions TF1 to TF3 are 29161.9, 7495.6 and 4000, respectively. Comparing the transfer function TF1 and the transfer function TF2, it can be seen that noise can be compressed by averaging over four pixels by TDI processing. Further, when the transfer function TF2 and the transfer function TF3 are compared, it can be seen that the noise is further reduced as the inter-color readout interval between the first pixel of red and the first pixel of green is reduced. Therefore, it can be seen that the resistance to vibration is improved by reducing the inter-color gap.

As described above, according to the first embodiment, in the imaging device 100, which is a TDI color sensor, two pixels P for different colors are arranged so as to contact each other without a gap. As a result, the inter-color gap GC can be suppressed, and deterioration of image quality due to vibration can be suppressed.

Note that the arrangement of the color filters is not necessarily limited to the example shown in FIG. For example, a color filter further adding one color out of red, blue, and green may be used.

[First Comparative Example]
FIG. 20 is a diagram showing an example of the configuration of an imaging device 100 in a first comparative example. The first modification differs from the first embodiment in that a CCD (Charge Coupled Device) structure is used instead of a CMOS (Complementary Metal Oxide Semiconductor) structure.

In the example shown in FIG. 20, since a CCD structure is used, for example, a circuit for extracting charges generated in the red pixel PR is arranged between the red pixel PR and the green pixel PG. be. As a result, the inter-color gap GC of the pixel P becomes large. As a result, the accuracy of the synthesized image deteriorates due to the vibration in the direction (X direction) perpendicular to the moving direction (Y direction) of the subject. That is, image quality deteriorates due to vibration. In the CCD structure, it is difficult to reduce the inter-color gap GC because it is necessary to provide a space for the output circuit between color pixel groups. Although the blue pixel PB is omitted in the example shown in FIG. 20, the same applies to the inter-color gap GC between the green pixel PG and the blue pixel PB.

On the other hand, the imaging device 100 according to the first embodiment has a CMOS structure, and an ADC 310 is arranged for each pixel P. FIG. Thus, the TDI processing in the arithmetic circuit 410 (signal processing circuit 400) can be addition of digital signals. As a result, no space is required for the output circuitry in the CCD structure. Therefore, it is possible to suppress the inter-color gap GC (inter-color pixel group gap) of the pixel P, and suppress deterioration of image quality due to vibration.

[Second Comparative Example]
FIG. 21 is a diagram showing an example of the configuration of an imaging device 100 in the second modified example. The second modification differs from the first embodiment in that the ADC 310 is provided not for each pixel P, but for each column (pixel row) including a plurality of pixels P. FIG.

When implementing TDI processing with a CMOS structure, a column ADC type in which an ADC 310 is arranged for each column is also conceivable. In this case, the signal line may be, for example, a signal line for outputting the signal line voltage toward the bottom of the page of FIG. As a result, the inter-color gap can be suppressed as in the first embodiment. However, since it is necessary to arrange the wiring of the signal line, the aperture ratio is lowered. In the example shown in FIG. 21, the signal lines are arranged above the pixels P of other colors (in the Z direction).

On the other hand, in the first embodiment, it is possible to suppress the decrease in the aperture ratio due to the arrangement of the signal lines, and it is possible to suppress the decrease in the area of the photoelectric conversion element 222 . The column ADC type can also suppress the gap between colors, and can suppress deterioration of image quality due to vibration. However, from the viewpoint of pixel characteristics such as an aperture ratio, it is more preferable to arrange the ADC 310 for each pixel P.

<Second Embodiment>
FIG. 22 is a diagram showing an example of the configuration of the imaging device 100 according to the second embodiment of the present technology. The second embodiment differs from the first embodiment in that the color pattern of the color filter is a Bayer array.

In the color filter shown in FIG. 22, the color of the pixel P changes for each pixel P along the Y direction. That is, two pixels P adjacent along the moving direction of the subject 511 receive lights of different colors.

The first pixel area, the second pixel area, and the third pixel area are arranged mixedly in the Y direction and the X direction. The first pixel region and the second pixel region are arranged without any gap in the Y direction. The second pixel area and the third pixel area are arranged without any gap in the Y direction. More specifically, as shown in FIG. 22, the first pixel region, the second pixel region, and the third pixel region are arranged in a Bayer array.

Also, the first color filter, the second color filter, and the third color filter are mixedly arranged in the Y direction and the X direction. The first color filter and the second color filter are arranged without a gap in the Y direction. The second color filter and the third color filter are arranged without gaps in the Y direction. More specifically, as shown in FIG. 22, the first color filters, the second color filters, and the third color filters are arranged in a Bayer array.

Even if the gap between colors is almost zero, if the positions in the Y direction are different for each color, the influence of vibration received by each color is not necessarily the same. In the color group arrangement shown in FIG. 15, for example, it is conceivable that vibration occurs at the imaging timing of the line of pixels PR for red, and then the imaging timing of the lines of pixels PG for green and PB for blue occurs. be done. In this case, the correlation between the vibrations received by each color is weakened.

On the other hand, in the Bayer array, pixels P for different colors are arranged on the next line of a certain pixel P. FIG. As a result, the time difference between the imaging timings for each color can be shortened. As a result, the correlation of vibrations received for each color can be further strengthened, and deterioration of image quality due to vibrations such as color shift can be further suppressed. Therefore, the Bayer array can be selected as an option when emphasizing color misregistration.

In addition, normally, in a TDI sensor with a CCD structure, as described with reference to FIG. 20, due to physical transfer, it is necessary to integrate the charges immediately after they are generated. is difficult.

On the other hand, in the second embodiment, the ADC 310 is arranged for each pixel P, and the latch circuit 350 holds the time code as described with reference to FIG. can be done. As a result, a Bayer array color filter can be selected.

In addition, this technique can take the following structures.
(1) a photoelectric conversion unit provided in each of a plurality of pixels for outputting an electrical signal photoelectrically converted within a period corresponding to the moving speed of a relatively moving subject;
a computing unit that integrates the electrical signals for each color of the plurality of pixels;
The imaging device, wherein the two pixels photoelectrically converting light of different colors are arranged without a gap along the relative movement direction of the subject.
(2) A first pixel region including one or more pixels that photoelectrically convert light of a first color, and a second pixel region including one or more pixels that photoelectrically convert light of a second color different from the first color. a pixel region and a third pixel region including one or more pixels photoelectrically converting light of a third color different from the first color and the second color along the relative movement direction of the subject; , and the imaging device according to (1), which are arranged without gaps.
(3) Each of the first pixel region, the second pixel region, and the third pixel region includes the one or more pixels in a first direction, which is the relative moving direction of the subject, and The imaging device according to (2), including the one or more pixels in a second direction that intersects with one direction.
(4) the first pixel region, the second pixel region, and the third pixel region are arranged without being mixed in the second direction;
the first pixel region and the second pixel region are arranged without gaps in the first direction;
The imaging device according to (3), wherein the second pixel region and the third pixel region are arranged without a gap in the first direction.
(5) the first pixel region, the second pixel region, and the third pixel region are mixedly arranged in the first direction and the second direction;
the first pixel region and the second pixel region are arranged without gaps in the first direction;
The imaging device according to (3), wherein the second pixel region and the third pixel region are arranged without a gap in the first direction.
(6) The imaging device according to (5), wherein the first pixel region, the second pixel region, and the third pixel region are arranged in a Bayer array.
(7) the pixel has a color filter corresponding to a wavelength band of light to be photoelectrically converted;
The imaging device according to any one of (1) to (6), wherein the two color filters corresponding to colors different from each other are arranged without gaps along the relative movement direction of the subject.
(8) the first pixel region has one or more pixels having a first color filter that transmits light of the first color;
the second pixel region has one or more pixels having a second color filter that transmits the light of the second color;
the third pixel region has one or more pixels having a third color filter that transmits light of the third color;
(2) to (6), wherein the first color filter, the second color filter, and the third color filter are arranged without gaps along a first direction that is a relative movement direction of the subject; The imaging device according to any one of .
(9) the first color filter, the second color filter, and the third color filter are arranged without being mixed in a second direction that intersects the first direction;
the first color filter and the second color filter are arranged without gaps in the first direction;
The imaging device according to (8), wherein the second color filter and the third color filter are arranged without a gap in the first direction.
(10) the first color filter, the second color filter, and the third color filter are mixedly arranged in the first direction and in a second direction intersecting the first direction;
the first color filter and the second color filter are arranged without gaps in the first direction;
The imaging device according to (8), wherein the second color filter and the third color filter are arranged without a gap in the first direction.
(11) The imaging device according to (10), wherein the first color filter, the second color filter, and the third color filter are arranged in a Bayer array.
(12) further comprising an ADC (Analog to Digital Converter) that is arranged for each of the plurality of pixels and converts the electrical signal into a digital signal;
The imaging device according to any one of (1) to (11), wherein the calculation unit integrates the digital signals for each color.
(13) a first chip on which the photoelectric conversion unit is arranged;
The imaging device according to (12), further comprising: a second chip stacked with the first chip and on which the ADC is arranged.
(14) The imaging device according to (13), wherein the ADC is arranged at a position overlapping with the photoelectric conversion unit in the stacking direction.
(15) an imaging device;
a moving unit that moves the subject of the imaging device at a predetermined speed,
The imaging device is
a photoelectric conversion unit provided in each of the plurality of pixels for outputting an electrical signal photoelectrically converted within a period corresponding to the moving speed of a relatively moving subject;
a computing unit that integrates the electrical signals for each color of the plurality of pixels;
The electronic device, wherein the two pixels that photoelectrically convert lights of different colors are arranged without a gap along the relative movement direction of the subject.

Aspects of the present disclosure are not limited to the individual embodiments described above, but include various modifications that can be conceived by those skilled in the art, and the effects of the present disclosure are not limited to the above-described contents. That is, various additions, changes, and partial deletions are possible without departing from the conceptual idea and spirit of the present disclosure derived from the content defined in the claims and equivalents thereof.

1 electronic device 100 imaging device 201 light receiving chip 202 circuit chip 222 photoelectric conversion element 310 ADC 400 signal processing circuit 410 arithmetic circuit 510 belt conveyor 511 subject P pixel PR pixel PG pixel PB pixel

Claims (15)

a photoelectric conversion unit provided in each of the plurality of pixels for outputting an electrical signal photoelectrically converted within a period corresponding to the moving speed of a relatively moving subject;
a computing unit that integrates the electrical signals for each color of the plurality of pixels;
The imaging device, wherein the two pixels photoelectrically converting light of different colors are arranged without a gap along the relative movement direction of the subject. a first pixel region including one or more pixels photoelectrically converting light of a first color; and a second pixel region including one or more pixels photoelectrically converting light of a second color different from the first color. , and a third pixel region including the one or more pixels photoelectrically converting light of a third color different from the first color and the second color, without gaps along the relative movement direction of the subject. 2. An imaging device according to claim 1, arranged. Each of the first pixel region, the second pixel region, and the third pixel region includes one or more pixels in a first direction, which is a direction in which the subject is relatively moved, and 3. The imaging device according to claim 2, comprising one or more of said pixels in a second intersecting direction. the first pixel region, the second pixel region, and the third pixel region are arranged without being mixed in the second direction;
the first pixel region and the second pixel region are arranged without gaps in the first direction;
4. The imaging device according to claim 3, wherein said second pixel region and said third pixel region are arranged without a gap in said first direction. the first pixel region, the second pixel region, and the third pixel region are mixedly arranged in the first direction and the second direction;
the first pixel region and the second pixel region are arranged without gaps in the first direction;
4. The imaging device according to claim 3, wherein said second pixel region and said third pixel region are arranged without a gap in said first direction. 6. The imaging device according to claim 5, wherein said first pixel region, said second pixel region, and said third pixel region are arranged in a Bayer array. The pixel has a color filter corresponding to a wavelength band of light to be photoelectrically converted,
2. The imaging device according to claim 1, wherein said two color filters corresponding to colors different from each other are arranged without a gap along the direction of relative movement of said subject. the first pixel region has one or more pixels having a first color filter that transmits light of the first color;
the second pixel region has one or more pixels having a second color filter that transmits the light of the second color;
the third pixel region has one or more pixels having a third color filter that transmits light of the third color;
3. The imaging according to claim 2, wherein said first color filter, said second color filter, and said third color filter are arranged without gaps along a first direction, which is a relative moving direction of said subject. Device. the first color filter, the second color filter, and the third color filter are arranged without being mixed in a second direction that intersects the first direction;
the first color filter and the second color filter are arranged without gaps in the first direction;
9. The imaging device according to claim 8, wherein said second color filter and said third color filter are arranged without a gap in said first direction. the first color filter, the second color filter, and the third color filter are mixedly arranged in the first direction and in a second direction intersecting the first direction;
the first color filter and the second color filter are arranged without gaps in the first direction;
9. The imaging device according to claim 8, wherein said second color filter and said third color filter are arranged without a gap in said first direction. 11. The imaging device according to claim 10, wherein said first color filter, said second color filter, and said third color filter are arranged in a Bayer array. further comprising an ADC (Analog to Digital Converter) that is arranged for each of the plurality of pixels and converts the electrical signal into a digital signal;
2. The imaging apparatus according to claim 1, wherein said calculation unit integrates said digital signals for each color. a first chip on which the photoelectric conversion unit is arranged;
13. The imaging device according to claim 12, further comprising: a second chip stacked with the first chip and on which the ADC is arranged. 14. The imaging device according to claim 13, wherein said ADC is arranged at a position overlapping said photoelectric conversion unit in a stacking direction. an imaging device;
a moving unit that moves the subject of the imaging device at a predetermined speed,
The imaging device is
a photoelectric conversion unit provided in each of the plurality of pixels for outputting an electrical signal photoelectrically converted within a period corresponding to the moving speed of a relatively moving subject;
a computing unit that integrates the electrical signals for each color of the plurality of pixels;
The electronic device, wherein the two pixels that photoelectrically convert lights of different colors are arranged without a gap along the relative movement direction of the subject.

Images