JP2022089842A - Metal plate, method for manufacturing metal plate, method for manufacturing mask and method for manufacturing mask device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a metal plate capable of improving accuracy of position of an open hole when tensioned.

SOLUTION: In a metal plate 64, a central part R1 is a portion occupying at least 60% of a width of the metal plate 64 after a cutting step, and one end side part R2 and the other end side part R3 have an equal ratio occupied to the width of the metal plate 64 after the cutting step. When designating a percentage of a height of a wave shape of the metal plate 64 as a degree of steepness to a period of the wave shape in the longitudinal direction D1, an absolute value of inclination of the degree of steepness obtained by dividing a difference between the degree of steepness at a first position in the width direction D2 and the degree of steepness at a second position by a distance between the first position and the second position is 6%/m or less in the central part R1 of the metal plate 64. A mask is allotted in the central part R1.

SELECTED DRAWING: Figure 34

COPYRIGHT: (C)2022,JPO&INPIT

Description

The present invention relates to a metal plate, a method for manufacturing a metal plate, a method for manufacturing a mask, and a method for manufacturing a mask device.

In recent years, display devices used in portable devices such as smartphones and tablet PCs are required to have high definition, for example, a pixel density of 500 ppi or more. Further, even in a portable device, there is an increasing demand for supporting ultra-high definition, and in this case, the pixel density of the display device is required to be, for example, 800 ppi or more.

Among display devices, organic EL display devices are attracting attention because of their good responsiveness, low power consumption, and high contrast. As a method of forming pixels of an organic EL display device, a method of forming pixels with a desired pattern by using a vapor deposition mask having through holes arranged in a desired pattern is known. Specifically, a vapor deposition process in which a vapor deposition mask is first adhered to a substrate for an organic EL display device, then the adhered vapor deposition mask and the substrate are put into the vapor deposition apparatus together, and an organic material is vapor-deposited on the substrate. I do. In this case, in order to accurately manufacture an organic EL display device having a high pixel density, it is required to accurately reproduce the position and shape of the through hole of the vapor deposition mask according to the design.

As a method for manufacturing a vapor deposition mask, for example, as disclosed in Patent Document 1, a method of forming a through hole in a metal plate by etching using a photolithography technique is known. For example, first, a first resist pattern is formed on the first surface of a metal plate by an exposure / development process, and a second resist pattern is formed on a second surface of a metal plate by an exposure / development process. Next, a region of the first surface of the metal plate that is not covered by the first resist pattern is etched to form a first opening on the first surface of the metal plate. Then, a region of the second surface of the metal plate that is not covered by the second resist pattern is etched to form a second opening on the second surface of the metal plate. At this time, it is possible to form a through hole penetrating the metal plate by performing etching so that the first opening and the second opening communicate with each other. The metal plate for producing the vapor deposition mask is obtained, for example, by rolling a base material such as an iron alloy.

In addition, as a method for manufacturing a thin-film deposition mask, for example, as disclosed in Patent Document 2, a method for manufacturing a thin-film deposition mask by using a plating treatment is known. For example, in the method described in Patent Document 2, a conductive base material is first prepared. Next, a resist pattern arranged with a predetermined gap is formed on the substrate by exposure / development processing. This resist pattern is provided at a position where a through hole of the vapor deposition mask should be formed. After that, a plating solution is supplied to the gaps of the resist pattern, and a metal layer is deposited on the base material by electrolytic plating. Then, by separating the metal layer from the base material, a thin-film deposition mask having a plurality of through holes can be obtained.

Japanese Patent No. 5382259 Japanese Unexamined Patent Publication No. 2001-234385

When a vapor deposition material is deposited on a substrate using a vapor deposition mask, the vapor deposition material adheres not only to the substrate but also to the vapor deposition mask. For example, some vapor deposition materials are directed toward the substrate along a direction that is significantly inclined with respect to the normal direction of the vapor deposition mask, but such vapor deposition materials are deposited before reaching the substrate. It reaches and adheres to the wall surface of the through hole of the mask. In this case, the vapor-deposited material is less likely to adhere to the region of the substrate located near the wall surface of the through hole of the vapor-film mask, and as a result, the thickness of the adhered vapor-film material becomes smaller than that of other parts. , It is conceivable that some parts may not have the vapor-filmed material attached. That is, it is conceivable that the vapor deposition near the wall surface of the through hole of the vapor deposition mask becomes unstable. Therefore, when the vapor deposition mask is used to form the pixels of the organic EL display device, the dimensional accuracy and the position accuracy of the pixels are lowered, and as a result, the luminous efficiency of the organic EL display device is lowered. Become.

In order to solve such a problem, it is conceivable to reduce the thickness of the metal plate used for manufacturing the vapor deposition mask. This is because the height of the wall surface of the through hole of the vapor deposition mask can be reduced by reducing the thickness of the metal plate, thereby reducing the proportion of the vapor deposition material that adheres to the wall surface of the through hole. Because it can be done.

As the metal plate used for producing the vapor deposition mask, a rolled material obtained by rolling the base material to a predetermined thickness may be used. In order to reduce the thickness of such a metal plate, it is necessary to increase the rolling ratio of the metal plate. Here, the rolling ratio is a value calculated by (thickness of base metal-thickness of metal plate) / (thickness of base metal). However, the elongation rate of the metal plate differs depending on the position in the width direction (the direction orthogonal to the transport direction of the base metal). The larger the rolling ratio, the greater the degree of non-uniformity of deformation due to rolling. Therefore, it is known that a wavy shape appears on a metal plate rolled at a large rolling ratio. Specifically, there is a wavy shape formed on the side edge of the metal plate in the width direction, which is called ear extension. Further, a wavy shape formed in the center in the width direction of the metal plate, which is called medium elongation, can be mentioned. Even when heat treatment such as annealing is performed after rolling, such a wavy shape can appear.

Further, a metal plate having a predetermined thickness may be produced by a foil making process using a plating process. However, in the foil making process, if the current density is non-uniform, the thickness of the produced metal plate may be non-uniform. As a result, a similar wavy shape may appear on the side edge of the metal plate in the width direction.

When a vapor deposition mask is produced from a metal plate having a wavy shape and stretched, the elongation of the vapor deposition mask differs in the width direction, which may cause the position of the through hole to shift. More specifically, the portion of the metal plate having a large wavy shape has a longer longitudinal dimension than the portion having a small wavy shape when formed as a vapor deposition mask. Here, it is assumed that a thin-film deposition mask is stretched by applying a tensile force to the first position portion and the second position portion that are different from each other in the width direction. In this case, when the longitudinal length of the vapor deposition mask in the first position portion is shorter than the longitudinal length in the second position portion, the longitudinal length of the first position portion is equal to the longitudinal length of the second position portion. Tensile force is applied to the vapor deposition mask so as to be. Therefore, the first position portion may extend more than the second position portion, and the central portion in the longitudinal direction of the vapor deposition mask may shift to the side of the first position portion in the width direction. In this case, the position of the through hole at the time of stretching may shift.

If the position of the through hole of the vapor deposition mask at the time of tensioning is displaced in this way, the position of the vapor deposition material deposited on the substrate through the through hole is displaced, and the dimensional accuracy and position of the pixels of the organic EL display device are displaced. The accuracy may decrease.

The present invention has been made in consideration of such problems, and is a method for manufacturing a metal plate, a method for manufacturing a metal plate, a method for manufacturing a mask, and a mask device capable of improving the position accuracy of a through hole at the time of stretching. The purpose is to provide a manufacturing method.

The present invention
A metal plate having a longitudinal direction used for forming a plurality of through holes to manufacture a mask.
The through hole of the mask is formed by etching the elongated metal plate being conveyed.
In the width direction of the metal plate, the metal plate has a central portion, one end side portion located on one end side in the width direction of the metal plate from the center portion, and the width direction of the metal plate from the center portion. It is divided into the other end side part located on the other end side of the
When the percentage of the height of the wavy shape with respect to the period of the wavy shape of the metal plate in the longitudinal direction is referred to as steepness, the steepness at the first position in the width direction and the steepness at the second position are used. The absolute value of the slope of the steepness obtained by dividing the difference by the distance between the first position and the second position is 6% / m or less in the central portion of the metal plate. ,
Is.

In the metal plate according to the present invention
The mask manufactured from the metal plate is a vapor deposition mask used for vapor deposition in a desired pattern.
You may do so.

In the metal plate according to the present invention
The mask is assigned to the central portion.
You may do so.

In the metal plate according to the present invention
The central portion is a portion that occupies at least 60% of the width of the metal plate.
You may do so.

In the metal plate according to the present invention
The one end side portion and the other end side portion occupy the same ratio to the width of the metal plate.
You may do so.

In the metal plate according to the present invention
The central portion is a portion that occupies at least 60% of the width of the metal plate.
You may do so.

In the metal plate according to the present invention
The metal plate is made of an iron alloy containing nickel.
You may do so.

The present invention
A method for manufacturing a metal plate having a longitudinal direction, which is used for forming a plurality of through holes to manufacture a mask.
The through hole of the mask is formed by etching the elongated metal plate being conveyed.
The method for manufacturing the metal plate is as follows.
The rolling process of rolling the base metal to obtain the metal plate,
A cutting step of cutting off one end and the other end in the width direction of the metal plate over a predetermined range is provided.
In the width direction of the metal plate, the metal plate has a central portion, one end side portion located on one end side in the width direction of the metal plate from the center portion, and the width direction of the metal plate from the center portion. It is divided into the other end side part located on the other end side of the
When the percentage of the height of the wavy shape with respect to the period of the wavy shape of the metal plate in the longitudinal direction after the cutting step is referred to as steepness, the steepness at the first position in the width direction and the steepness at the second position are used. A metal in which the absolute value of the slope of the steepness obtained by dividing the difference from the steepness by the distance between the first position and the second position is 6% / m or less in the central portion. How to make a board,
Is.

In the method for manufacturing a metal plate according to the present invention,
The mask manufactured from the metal plate is a vapor deposition mask used for vapor deposition in a desired pattern.
You may do so.

In the method for manufacturing a metal plate according to the present invention,
The mask is assigned to the central portion.
You may do so.

In the method for manufacturing a metal plate according to the present invention,
The central portion is a portion that occupies at least 60% of the width of the metal plate after the cutting step.
You may do so.

In the method for manufacturing a metal plate according to the present invention,
The one end side portion and the other end side portion occupy the same ratio to the width of the metal plate after the cutting step.
You may do so.

In the method for manufacturing a metal plate according to the present invention,
The range on one end side and the range on the other end side of the metal plate to be cut in the cutting step are determined based on the result of the observation step of the wavy shape of the metal plate performed before the cutting step. ,
You may do so.

In the method for manufacturing a metal plate according to the present invention,
Further provided with an annealing step of annealing the metal plate obtained by the rolling step to remove the internal stress of the metal plate.
The annealing step is carried out while pulling the rolled base metal in the longitudinal direction.
You may do so.

In the method for manufacturing a metal plate according to the present invention,
The base material is composed of an iron alloy containing nickel.
You may do so.

The present invention
It is a method of manufacturing a mask in which a plurality of through holes are formed.
The process of preparing a metal plate with a longitudinal direction and
A resist pattern forming step of forming a resist pattern on the metal plate and
The metal plate is provided with an etching step of etching a region of the metal plate not covered by the resist pattern to form a recess in the metal plate so as to define the through hole.
In the width direction of the metal plate, the metal plate has a central portion, one end side portion located on one end side in the width direction of the metal plate from the center portion, and the width direction of the metal plate from the center portion. It is divided into the other end side part located on the other end side of the
When the percentage of the height of the wavy shape with respect to the period of the wavy shape of the metal plate in the longitudinal direction is referred to as steepness, the steepness at the first position in the width direction and the steepness at the second position A method for manufacturing a mask, wherein the absolute value of the slope of the steepness obtained by dividing the difference by the distance between the first position and the second position is 6% / m or less in the central portion.
Is.

In the method for manufacturing a mask according to the present invention
The mask is a vapor deposition mask used for vapor deposition in a desired pattern.
The vapor deposition mask comprises an effective region in which a plurality of through holes are formed and a peripheral region located around the effective region.
The etching step etches a region of the metal plate that is not covered by the resist pattern, and a recess that defines a through hole in the region of the metal plate that forms the effective region. Is what forms
You may do so.

In the method for manufacturing a mask according to the present invention
The resist pattern forming step is
The step of forming a resist film on the metal plate and
The step of vacuum-adhering the exposure mask to the resist film and
It comprises a step of exposing the resist film with a predetermined pattern through the exposure mask.
You may do so.

In the method for manufacturing a mask according to the present invention
The mask is assigned to the central portion.
You may do so.

In the method for manufacturing a mask according to the present invention
The central portion is a portion that occupies at least 60% of the width of the metal plate.
You may do so.

In the method for manufacturing a mask according to the present invention
The one end side portion and the other end side portion occupy the same ratio to the width of the metal plate.
You may do so.

In the method for manufacturing a mask according to the present invention
The metal plate is made of an iron alloy containing nickel.
You may do so.

The present invention
The step of preparing the mask by the above-mentioned mask manufacturing method and
A method for manufacturing a mask device, comprising a step of applying tension to the mask in the longitudinal direction to stretch the mask on a frame.
Is.

The present invention
The process of preparing the mask device by the above-mentioned manufacturing method of the mask device, and
The process of bringing the mask of the mask device into close contact with the substrate,
A vapor deposition method comprising a step of depositing a vapor deposition material on the substrate through the through hole of the mask.
Is.

According to the present invention, it is possible to improve the position accuracy of the through hole at the time of stretching.

It is a figure which shows the vapor deposition apparatus provided with the vapor deposition mask apparatus by one Embodiment of this invention. It is sectional drawing which shows the organic EL display apparatus manufactured by using the vapor deposition mask apparatus shown in FIG. 1. It is a top view which shows the vapor deposition mask apparatus by one Embodiment of this invention. It is a partial plan view which shows the effective area of the vapor deposition mask shown in FIG. It is sectional drawing along the VV line of FIG. It is sectional drawing along the VI-VI line of FIG. It is sectional drawing along the line VII-VII of FIG. FIG. 5 is an enlarged cross-sectional view showing a through hole shown in FIG. 5 and a region in the vicinity thereof. It is a schematic diagram for demonstrating dimension X1 and dimension X2 in the vapor deposition mask of FIG. It is a figure which shows the process of rolling a base metal, and obtaining the metal plate which has a desired thickness. It is a figure which shows the process of annealing a metal plate obtained by rolling. FIG. 12 is a perspective view showing a metal plate obtained by the steps shown in FIGS. 10 and 11. 13 (a), (b), (c) and (d) are cross-sectional views taken along the lines aa, bb, cc and d of FIG. 12, respectively. It is a figure which shows the steepness at each position in the width direction of a metal plate. It is a figure which shows an example of steepness for demonstrating the slope of steepness. It is a figure which shows another example of steepness for demonstrating the slope of steepness. It is a schematic diagram for demonstrating an example of the manufacturing method of a thin-film deposition mask as a whole. It is a figure which shows the process of forming a resist film on a metal plate. It is a figure which shows the process of adhering an exposure mask to a resist film. It is a figure which shows the process of developing a resist film. It is a figure which shows the 1st surface etching process. It is a figure which shows the process of covering the 1st recess with resin. It is a figure which shows the 2nd surface etching process. It is a figure which shows the 2nd surface etching process which follows | FIG. It is a figure which shows the process of removing a resin and a resist pattern from a long metal plate. It is a perspective view for demonstrating that a thin-film deposition mask is formed on a long metal plate in which a wavy shape is compressed and becomes a substantially flat state. It is a perspective view which shows a plurality of vapor deposition masks formed on a long metal plate. It is a top view which shows the vapor deposition mask cut out from the long metal plate shown in FIG. 27. It is a figure which shows an example of the dimension measuring apparatus of a vapor deposition mask. It is a figure which shows an example of a tension applying device. It is a top view which shows an example of the stretched state of the vapor deposition mask shown in FIG. 28. It is a top view which shows another example of the stretched state of the vapor deposition mask shown in FIG. 28. It is a top view which shows the 1st sample placed on a stage. It is a figure which shows the quality determination result of the vapor deposition mask.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings attached to the present specification, the scale and the aspect ratios are appropriately changed and exaggerated from those of the actual product for the convenience of illustration and comprehension.

1 to 32 are views for explaining an embodiment of the present invention. In the following embodiments and modifications thereof, a method for manufacturing a vapor deposition mask used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device will be described as an example. However, the present invention is not limited to such an application, and the present invention can be applied to a vapor deposition mask used for various uses.

In addition, in this specification, the terms "board", "sheet", and "film" are not distinguished from each other based only on the difference in names. For example, "board" is a concept that includes members that can be called sheets or films.

Further, the "plate surface (sheet surface, film surface)" is a plate-like member (sheet-like) that is a target when the target plate-like (sheet-like, film-like) member is viewed as a whole and in a broad sense. A surface that coincides with the plane direction of a member (member, film-like member). Further, the normal direction used for the plate-shaped (sheet-shaped, film-shaped) member refers to the normal direction with respect to the plate surface (sheet surface, film surface) of the member.

In addition, as used herein, terms such as "parallel", "orthogonal", "identical", "equivalent" and lengths and angles that specify the shape, geometrical conditions and physical properties and their degree. In addition, the values of physical characteristics, etc. shall be interpreted including the range in which similar functions can be expected without being bound by the strict meaning.

(Evaporation equipment)
First, a thin-film deposition apparatus 90 that performs a thin-film deposition process for depositing a thin-film deposition material on an object will be described with reference to FIG. As shown in FIG. 1, the vapor deposition apparatus 90 includes a vapor deposition source (for example, a crucible 94), a heater 96, and a vapor deposition mask apparatus 10 inside the vapor deposition apparatus 90. Further, the vapor deposition apparatus 90 further includes an exhaust means for creating a vacuum atmosphere inside the vapor deposition apparatus 90. The crucible 94 accommodates a vapor deposition material 98 such as an organic light emitting material. The heater 96 heats the crucible 94 to evaporate the vapor deposition material 98 in a vacuum atmosphere. The vapor deposition mask device 10 is arranged so as to face the crucible 94.

(Evaporation mask device)
Hereinafter, the vapor deposition mask device 10 will be described. As shown in FIG. 1, the vapor deposition mask device 10 includes a vapor deposition mask 20 and a frame 15 that supports the vapor deposition mask 20. The frame 15 supports the vapor deposition mask 20 in a state of being pulled in the plane direction so that the vapor deposition mask 20 does not bend. As shown in FIG. 1, the vapor deposition mask device 10 is arranged in the vapor deposition device 90 so that the vapor deposition mask 20 faces a substrate to which the vapor deposition material 98 is attached, for example, an organic EL substrate 92. In the following description, among the surfaces of the vapor deposition mask 20, the surface on the organic EL substrate 92 side is referred to as the first surface 20a, and the surface located on the opposite side of the first surface 20a is referred to as the second surface 20b.

As shown in FIG. 1, the vapor deposition mask device 10 may include a magnet 93 arranged on the surface of the organic EL substrate 92 opposite to the vapor deposition mask 20. By providing the magnet 93, the vapor deposition mask 20 can be attracted to the magnet 93 side by a magnetic force, and the vapor deposition mask 20 can be brought into close contact with the organic EL substrate 92.

FIG. 3 is a plan view showing a case where the vapor deposition mask device 10 is viewed from the first surface 20a side of the vapor deposition mask 20. As shown in FIG. 3, the vapor deposition mask device 10 includes a plurality of vapor deposition masks 20 having a substantially rectangular shape in a plan view, and each vapor deposition mask 20 has a pair of end portions 26a in the longitudinal direction D1 of the vapor deposition mask 20. , 26b, fixed to the frame 15.

The vapor deposition mask 20 includes a metal plate in which a plurality of through holes 25 penetrating the vapor deposition mask 20 are formed. The vapor deposition material 98 that evaporates from the crucible 94 and reaches the vapor deposition mask device 10 adheres to the organic EL substrate 92 through the through hole 25 of the vapor deposition mask 20. Thereby, the vapor deposition material 98 can be formed on the surface of the organic EL substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20.

FIG. 2 is a cross-sectional view showing an organic EL display device 100 manufactured by using the vapor deposition device 90 of FIG. The organic EL display device 100 includes an organic EL substrate 92 and pixels including a vapor-deposited material 98 provided in a pattern.

If it is desired to display colors in a plurality of colors, a vapor deposition apparatus 90 equipped with a vapor deposition mask 20 corresponding to each color is prepared, and the organic EL substrate 92 is sequentially charged into each vapor deposition apparatus 90. Thereby, for example, the organic light emitting material for red, the organic light emitting material for green, and the organic light emitting material for blue can be vapor-deposited on the organic EL substrate 92 in this order.

By the way, the thin-film deposition process may be carried out inside the thin-film deposition apparatus 90, which has a high-temperature atmosphere. In this case, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 held inside the vapor deposition apparatus 90 are also heated during the vapor deposition process. At this time, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 show the behavior of dimensional change based on their respective thermal expansion coefficients. In this case, if the coefficient of thermal expansion of the vapor deposition mask 20 or the frame 15 and the organic EL substrate 92 are significantly different, a positional shift occurs due to the difference in their dimensional changes, and as a result, the organic EL substrate 92 adheres to the organic EL substrate 92. The dimensional accuracy and position accuracy of the vapor-filmed material will decrease.

In order to solve such a problem, it is preferable that the coefficient of thermal expansion of the vapor deposition mask 20 and the frame 15 is the same as the coefficient of thermal expansion of the organic EL substrate 92. For example, when a glass substrate is used as the organic EL substrate 92, an iron alloy containing nickel can be used as the main material of the vapor deposition mask 20 and the frame 15. For example, as a material for the metal plate constituting the vapor deposition mask 20, an iron alloy containing 30% by mass or more and 54% by mass or less of nickel can be used. Specific examples of the nickel-containing iron alloy include an Invar material containing 34% by mass or more and 38% by mass or less of nickel, and a Super Invar material containing 30% by mass or more and 34% by mass or less of nickel and further cobalt. Examples thereof include low thermal expansion Fe—Ni plated alloys containing nickel of mass% or more and 54 mass% or less.

If the temperatures of the vapor deposition mask 20, the frame 15 and the organic EL substrate 92 do not reach high temperatures during the vapor deposition process, the coefficient of thermal expansion of the vapor deposition mask 20 and the frame 15 is taken as the coefficient of thermal expansion of the organic EL substrate 92. There is no particular need to make them equivalent values. In this case, a material other than the above-mentioned iron alloy may be used as the material constituting the vapor deposition mask 20. For example, an iron alloy other than the above-mentioned nickel-containing iron alloy, such as an iron alloy containing chromium, may be used. As the iron alloy containing chromium, for example, a so-called stainless steel iron alloy can be used. Further, alloys other than iron alloys such as nickel and nickel-cobalt alloys may be used.

(Evaporation mask)
Next, the vapor deposition mask 20 will be described in detail. As shown in FIG. 3, the vapor deposition mask 20 is a pair of selvage portions (first selvage portion 17a) constituting a pair of end portions (first end portion 26a and second end portion 26b) in the longitudinal direction D1 of the vapor deposition mask 20. And a second selvage portion 17b), and an intermediate portion 18 located between the pair of selvage portions 17a and 17b.

(Ear)
First, the ears 17a and 17b will be described in detail. The selvage portions 17a and 17b are portions of the vapor deposition mask 20 fixed to the frame 15. In the present embodiment, it is integrally configured with the intermediate portion 18. The selvage portions 17a and 17b may be formed of a member different from the intermediate portion 18. In this case, the selvage portions 17a and 17b are joined to the intermediate portion 18 by welding, for example.

(Middle part)
Next, the intermediate portion 18 will be described. The intermediate portion 18 includes an effective region 22 in which a through hole 25 extending from the first surface 20a to the second surface 20b is formed, and a peripheral region 23 located around the effective region 22 and surrounding the effective region 22. The effective region 22 is a region of the vapor deposition mask 20 facing the display region of the organic EL substrate 92.

As shown in FIG. 3, the intermediate portion 18 includes a plurality of effective regions 22 arranged at predetermined intervals along the longitudinal direction D1 of the vapor deposition mask 20. One effective area 22 corresponds to the display area of one organic EL display device 100. Therefore, according to the thin-film deposition mask device 10 shown in FIG. 1, multi-sided vapor deposition of the organic EL display device 100 is possible.

As shown in FIG. 3, the effective domain 22 has, for example, a substantially quadrangular contour in a plan view, or more accurately, a substantially rectangular contour in a plan view. Although not shown, each effective region 22 can have contours having various shapes depending on the shape of the display region of the organic EL substrate 92. For example, each effective region 22 may have a circular contour.

Hereinafter, the effective region 22 will be described in detail. FIG. 4 is a plan view showing an enlarged effective region 22 from the second surface 20b side of the vapor deposition mask 20. As shown in FIG. 4, in the illustrated example, the plurality of through holes 25 formed in each effective region 22 are arranged in the effective region 22 along two directions orthogonal to each other at a predetermined pitch. There is. An example of the through hole 25 will be described in more detail with reference mainly to FIGS. 5 to 7. 5 to 7 are cross-sectional views taken along the VV direction to VII-VII direction of the effective region 22 of FIG. 4, respectively.

As shown in FIGS. 5 to 7, the plurality of through holes 25 are formed along the normal direction N of the vapor deposition mask 20 from the first surface 20a on one side along the normal direction N of the vapor deposition mask 20. It penetrates to the second surface 20b on the other side. In the illustrated example, as will be described in detail later, the first recess 30 is formed by etching on the first surface 21a of the metal plate 21 which is one side in the normal direction N of the vapor deposition mask 20, and the vapor deposition mask 20 is formed. A second recess 35 is formed on the second surface 21b of the metal plate 21 on the other side in the normal direction N. The first recess 30 is connected to the second recess 35, whereby the second recess 35 and the first recess 30 are formed so as to communicate with each other. The through hole 25 is composed of a second recess 35 and a first recess 30 connected to the second recess 35.

As shown in FIGS. 5 to 7, the plate of the vapor deposition mask 20 at each position along the normal direction N of the vapor deposition mask 20 from the side of the second surface 20b of the vapor deposition mask 20 to the side of the first surface 20a. The opening area of each second recess 35 in the cross section along the surface gradually becomes smaller. Similarly, the opening area of each first recess 30 in the cross section along the plate surface of the vapor deposition mask 20 at each position along the normal direction N of the vapor deposition mask 20 is from the side of the first surface 20a of the vapor deposition mask 20. It gradually becomes smaller toward the side of the second surface 20b.

As shown in FIGS. 5 to 7, the wall surface 31 of the first recess 30 and the wall surface 36 of the second recess 35 are connected via a circumferential connection portion 41. In the connection portion 41, the wall surface 31 of the first recess 30 inclined with respect to the normal direction N of the vapor deposition mask 20 and the wall surface 36 of the second recess 35 inclined with respect to the normal direction N of the vapor deposition mask 20 merge. It is defined by the ridgeline of the overhanging part. Then, the connecting portion 41 defines a penetrating portion 42 in which the opening area of the through hole 25 is minimized in the plan view of the vapor deposition mask 20.

As shown in FIGS. 5 to 7, two adjacent through holes 25 are vapor-deposited on the other side surface of the vapor deposition mask 20 along the normal direction N, that is, on the first surface 20a of the vapor deposition mask 20. They are separated from each other along the plate surface of the mask 20. That is, as in the manufacturing method described later, when the metal plate 21 is etched from the first surface 21a side of the metal plate 21 corresponding to the first surface 20a of the vapor deposition mask 20 to produce the first recess 30. , The first surface 21a of the metal plate 21 remains between the two adjacent first recesses 30.

Similarly, as shown in FIGS. 5 and 7, two adjacent second recesses are also formed on one side of the vapor deposition mask 20 along the normal direction N, that is, on the side of the second surface 20b of the vapor deposition mask 20. 35 may be separated from each other along the plate surface of the vapor deposition mask 20. That is, the second surface 21b of the metal plate 21 may remain between the two adjacent second recesses 35. In the following description, the portion of the effective region 22 of the second surface 21b of the metal plate 21 that remains unetched is also referred to as a top portion 43. By manufacturing the vapor deposition mask 20 so that such a top portion 43 remains, the vapor deposition mask 20 can be provided with sufficient strength. This makes it possible to prevent the vapor deposition mask 20 from being damaged during handling, for example. If the width β of the top portion 43 is too large, shadows may occur in the vapor deposition process, which may reduce the utilization efficiency of the vapor deposition material 98. Therefore, it is preferable that the vapor deposition mask 20 is manufactured so that the width β of the top portion 43 does not become excessively large. For example, the width β of the top portion 43 is preferably 2 μm or less. The width β of the top portion 43 generally changes depending on the direction in which the vapor deposition mask 20 is cut. For example, the widths β of the top portions 43 shown in FIGS. 5 and 7 may differ from each other. In this case, the vapor deposition mask 20 may be configured so that the width β of the top portion 43 is 2 μm or less regardless of the direction in which the vapor deposition mask 20 is cut.

As shown in FIG. 6, etching may be performed so that two adjacent second recesses 35 are connected depending on the location. That is, there may be a place where the second surface 21b of the metal plate 21 does not remain between the two adjacent second recesses 35. Further, although not shown, etching may be performed so that two adjacent second recesses 35 are connected over the entire area of the second surface 21b.

When the vapor deposition mask device 10 is housed in the vapor deposition device 90 as shown in FIG. 1, the first surface 20a of the vapor deposition mask 20 faces the organic EL substrate 92 as shown by a two-dot chain line in FIG. The second surface 20b of the vapor deposition mask 20 is located on the side of the pot 94 holding the vapor deposition material 98. Therefore, the thin-film deposition material 98 passes through the second recess 35 whose opening area is gradually reduced and adheres to the organic EL substrate 92. As shown by the arrow from the second surface 20b side to the first surface 20a in FIG. 5, the vapor deposition material 98 moves from the pot 94 toward the organic EL substrate 92 along the normal direction N of the organic EL substrate 92. Not only that, the organic EL substrate 92 may move in a direction greatly inclined with respect to the normal direction N. At this time, if the thickness of the vapor deposition mask 20 is large, most of the vapor deposition material 98 that moves diagonally reaches the wall surface 36 of the second recess 35 before reaching the organic EL substrate 92 through the through hole 25. And adhere. Therefore, in order to improve the utilization efficiency of the thin-film deposition material 98, the thickness t of the vapor-film deposition mask 20 can be reduced, thereby reducing the height of the wall surface 36 of the second recess 35 and the wall surface 31 of the first recess 30. It is considered preferable. That is, it can be said that it is preferable to use the metal plate 21 having a thickness t as small as possible within the range where the strength of the vapor deposition mask 20 can be secured as the metal plate 21 for forming the vapor deposition mask 20. In consideration of this point, in the present embodiment, the thickness t of the vapor deposition mask 20 is preferably set to 85 μm or less, for example, 5 μm or more and 85 μm or less. The thickness t is the thickness of the peripheral region 23, that is, the thickness of the portion of the vapor deposition mask 20 in which the first recess 30 and the second recess 35 are not formed. Therefore, it can be said that the thickness t is the thickness of the metal plate 21.

In FIG. 5, a straight line L1 passing through a connecting portion 41 which is a portion having a minimum opening area of the through hole 25 and another arbitrary position of the wall surface 36 of the second recess 35 is in the normal direction of the vapor deposition mask 20. The minimum angle formed with respect to N is represented by the reference numeral θ1. In order for the thin-film deposited material 98 that moves diagonally to reach the organic EL substrate 92 as much as possible without reaching the wall surface 36, it is advantageous to increase the angle θ1. In order to increase the angle θ1, it is effective not only to reduce the thickness t of the vapor deposition mask 20 but also to reduce the width β of the top portion 43 described above.

In FIG. 7, reference numeral α represents the width of a portion (hereinafter, also referred to as a rib portion) remaining unetched in the effective region 22 of the first surface 21a of the metal plate 21. The width α of the rib portion and the dimension r ₂ of the penetrating portion 42 are appropriately determined according to the dimensions of the organic EL display device and the number of display pixels. Table 1 shows an example of the values of the number of display pixels, the width α of the rib portion and the dimension r ₂ of the penetrating portion 42 obtained according to the number of display pixels in the 5-inch organic EL display device.

Although not limited, the vapor deposition mask 20 according to the present embodiment is particularly effective when manufacturing an organic EL display device having a pixel density of 450 ppi or more. Hereinafter, with reference to FIG. 8, an example of the dimensions of the vapor deposition mask 20 required for manufacturing such an organic EL display device having a high pixel density will be described. FIG. 8 is an enlarged cross-sectional view showing a through hole 25 of the vapor deposition mask 20 shown in FIG. 5 and a region in the vicinity thereof.

In FIG. 8, as a parameter related to the shape of the through hole 25, the distance from the first surface 20a of the vapor deposition mask 20 to the connection portion 41 in the direction along the normal direction N of the vapor deposition mask 20, that is, the first recess. _The height of the wall surface 31 of 30 is represented by the reference numeral r1. Further, the dimension of the first recess 30 in the portion where the first recess 30 is connected to the _second recess 35, that is, the dimension of the penetrating portion 42 is represented by reference numeral r2. Further, in FIG. 8, the angle formed by the straight line L2 connecting the connecting portion 41 and the tip edge of the first recess 30 on the first surface 21a of the metal plate 21 with respect to the normal direction N of the metal plate 21 is determined. It is represented by the reference numeral θ2.

When manufacturing an organic EL display device having a pixel density of 450 ppi or more, the dimension r ₂ of the penetration portion 42 is preferably set to 10 or more and 60 μm or less. This makes it possible to provide a vapor deposition mask 20 capable of producing an organic EL display device having a high pixel density. Preferably, the height r ₁ of the wall surface 31 of the first recess 30 is set to 6 μm or less.

Next, the above-mentioned angle θ2 shown in FIG. 8 will be described. The angle θ2 is a vapor deposition that can reach the organic EL substrate 92 among the vapor deposition materials 98 that are inclined with respect to the normal direction N of the metal plate 21 and that have flown so as to pass through the penetration portion 42 in the vicinity of the connection portion 41. It corresponds to the maximum value of the tilt angle of the material 98. This is because the thin-film deposition material 98 that has flown through the connection portion 41 at an inclination angle larger than the angle θ2 adheres to the wall surface 31 of the first recess 30 before reaching the organic EL substrate 92. Therefore, by reducing the angle θ2, it is possible to prevent the thin-film deposition material 98 that flies at a large inclination angle and passes through the penetrating portion 42 from adhering to the organic EL substrate 92, whereby the organic EL substrate 92 can be prevented from adhering to the organic EL substrate 92. It is possible to prevent the vapor-filmed material 98 from adhering to a portion outside the portion overlapping the penetrating portion 42. That is, reducing the angle θ2 leads to the suppression of variations in the area and thickness of the vapor-filmed material 98 adhering to the organic EL substrate 92. From this point of view, for example, the through hole 25 is formed so that the angle θ2 is 45 degrees or less. In FIG. 8, the dimension of the first recess 30 on the first surface 21a, that is, the opening dimension of the through hole 25 on the first surface 21a is larger than the dimension r2 of the first recess 30 on the connecting portion 41. An example is shown. That is, an example is shown in which the value of the angle θ2 is a positive value. However, although not shown, the dimension r2 of the first recess 30 in the connecting portion 41 may be larger than the dimension of the first recess 30 in the first surface 21a. That is, the value of the angle θ2 may be a negative value.

By the way, as shown in FIG. 3, as described above, the vapor deposition mask 20 extends from the first selvage portion 17a constituting the first end portion 26a to the second selvage portion 17b constituting the second end portion 26b in the longitudinal direction. It is formed so as to extend in D1 (first direction). Here, the longitudinal direction D1 is a direction parallel to the transport direction when rolling the base metal 55 (see FIG. 10), and is the longitudinal direction of the vapor deposition mask 20 in which the plurality of effective regions 22 are arranged. The term transport is used to mean transport of the base metal 55 by roll-to-roll as described later. Further, the width direction D2 (second direction), which will be described later, is a direction orthogonal to the longitudinal direction D1 in the surface direction of the metal plate 21 or the long metal plate 64. The vapor deposition mask 20 extends in the longitudinal direction D1 and has a central axis AL arranged at the center position in the width direction D2. When the number of through holes 25 in the width direction D2 is odd, the central axis AL passes through the center point of the through holes 25 in the center of the width direction D2. On the other hand, when the number of through holes 25 in the width direction D2 is an even number, the central axis AL passes through an intermediate point between two through holes 25 adjacent to each other in the vicinity of the center of the width direction D2.

であり、かつ、

を満たしている。 In the vapor deposition mask 20 according to the present embodiment, as shown in FIG. 9, the dimension from the point P1 to the point Q1 described later is X1, the dimension from the point P2 to the point Q2 is X2, and the predetermined value is α _X. When

And

Meet.

Of these, the left side of the equation (1) means the absolute value of the average value of the difference between the predetermined value and the dimension X1 and the difference between the predetermined value and the dimension X2. The left side of the equation (2) means the absolute value of the difference between the dimension X1 and the dimension X2.

Here, the points P1 and Q1 are provided on one side (left side in FIG. 9) of the central axis AL of the vapor deposition mask 20, and are separated from each other along the longitudinal direction D1. The points P2 and Q2 are provided on the other side (right side in FIG. 9) of the central axis AL of the vapor deposition mask 20 and are separated from each other along the longitudinal direction D1. The points P1 and P2 are arranged symmetrically with respect to the central axis AL at the time of vapor deposition. More specifically, the points P1 and P2 are points intended to be arranged symmetrically with respect to the central axis AL at the time of vapor deposition, and are symmetrical with respect to the central axis AL at the time of design. It is a point to be placed. Similarly, points Q1 and Q2 are arranged symmetrically with respect to the central axis AL at the time of vapor deposition.

In the present embodiment, the points P1, Q1, P2 and Q2 are positioned at the center points of the corresponding through holes 25 provided between the first selvage portion 17a and the second selvage portion 17b. Has been done. That is, in the present embodiment, the plurality of effective regions 22 are the first effective region 22A arranged on the side of the first ear portion 17a and the second effective region arranged on the side of the second ear portion 17b. It has 22B and. The points P1 and P2 are positioned at the center points of the through holes 25 formed in the first effective region 22A. The through holes 25 corresponding to the points P1 and P2 are formed on the side of the first selvage portion 17a among the plurality of through holes 25 of the first effective region 22A. On the other hand, the Q1 point and the Q2 point are positioned at the center point of the through hole 25 formed in the second effective region 22B. The through hole 25 corresponding to the Q1 point and the Q2 point is formed on the side of the second ear portion 17b among the plurality of through holes 25 of the second effective region 22B. The dimension X1 means the linear distance between the P1 point and the Q1 point of the vapor deposition mask 20 stationary on the stage 81 or the like described later, and the dimension X2 is the P2 point and the Q2 point of the vapor deposition mask 20. It means the straight line distance between them. The thin-film deposition mask 20 placed stationary on the stage 81 or the like is curved in a C shape as described later (see FIG. 28), but the details will be described later. The through hole 25 corresponding to the points P1 and Q1 is positioned on the side of the first side edge 27a, and the through hole 25 corresponding to the points P2 and Q2 is located on the side of the second side edge 27b. It is positioned in.

The predetermined value α _X shown in the equation (1) may be a design value (or a specification value). In this case, α _X is a design value of dimension X1 and is also a design value of dimension X2. This is because, at the time of design, the P1, Q1, P2 and Q2 points are positioned symmetrically with respect to the central axis AL of the vapor deposition mask 20, so that the dimension X1 and the dimension X2 are the same. Here, the design value is a numerical value set with the intention that the through hole 25 is arranged at a desired position (deposited target position) when the frame 15 is stretched, and is not stretched. It is a numerical value of.

Next, a method for manufacturing the vapor deposition mask 20 will be described.

Method for Manufacturing Metal Plate First , a method for manufacturing a metal plate used for manufacturing a vapor deposition mask will be described.

(Rolling process)
First, as shown in FIG. 10, a base material 55 composed of an iron alloy containing nickel is prepared, and the base material 55 is pointed at a rolling apparatus 56 including a pair of rolling rolls 56a and 56b, and is indicated by an arrow D1. Transport along the direction. The base metal 55 reached between the pair of rolling rolls 56a and 56b is rolled by the pair of rolling rolls 56a and 56b, and as a result, the base metal 55 is reduced in thickness and stretched along the transport direction. Is rolled. Thereby, a plate material 64X having a thickness t ₀ can be obtained. As shown in FIG. 10, the winding body 62 may be formed by winding the plate member 64X around the core 61. The specific value of the thickness t ₀ is preferably 5 μm or more and 85 μm or less as described above.

Note that FIG. 10 merely shows an outline of the rolling process, and the specific configuration and procedure for carrying out the rolling process are not particularly limited. For example, in the rolling process, a hot rolling process in which the base metal is processed at a temperature higher than the temperature at which the crystal arrangement of the Inver material constituting the base material 55 is changed, or a temperature below the temperature at which the crystal arrangement of the Inver material is changed is used. It may include a cold rolling step of processing. Further, the direction in which the base material 55 and the plate material 64X are passed between the pair of rolling rolls 56a and 56b is not limited to one direction. For example, in FIGS. 10 and 11, the mother material 55 and the plate material 64X are repeatedly passed between the pair of rolling rolls 56a and 56b in the direction from the left side to the right side of the paper surface and the direction from the right side to the left side of the paper surface. The material 55 or the plate material 64X may be gradually rolled.

(Slit process)
After that, a slit step may be carried out in which both ends of the plate material 64X obtained by the rolling step in the width direction are cut off over a predetermined range so that the width of the plate material 64X is within a predetermined range. This slitting step is carried out in order to remove cracks that may occur at both ends of the plate material 64X due to rolling. By carrying out such a slit process, it is possible to prevent a phenomenon in which the plate material 64X is broken, that is, a so-called plate breakage, which occurs from the crack as a starting point.

(Annealing process)
Then, in order to remove the residual stress (internal stress) accumulated in the plate material 64X by rolling, the plate material 64X is annealed using the annealing device 57 as shown in FIG. 11, thereby obtaining a long metal plate 64. As shown in FIG. 11, the annealing step may be performed while pulling the plate material 64X or the long metal plate 64 in the transport direction (longitudinal direction). That is, the annealing step may be carried out as continuous annealing while conveying, instead of so-called batch annealing.

Preferably, the annealing step described above is carried out in a non-reducing atmosphere or an inert gas atmosphere. Here, the non-reducing atmosphere is an atmosphere that does not contain a reducing gas such as hydrogen. "Do not contain reducing gas" means that the concentration of reducing gas such as hydrogen is 4% or less. The inert gas atmosphere is an atmosphere in which 90% or more of the inert gas such as argon gas, helium gas, and nitrogen gas is present. By carrying out the annealing step in a non-reducing atmosphere or an inert gas atmosphere, it is possible to suppress the formation of the above-mentioned nickel hydroxide on the first surface 64a and the second surface 64b of the long metal plate 64. ..

By carrying out the annealing step, it is possible to obtain a long metal plate 64 having a thickness t ₀ from which residual strain has been removed to some extent. The thickness t ₀ is usually equal to the thickness t of the vapor deposition mask 20.

By repeating the above-mentioned rolling step, slitting step, and annealing step a plurality of times, a long metal plate 64 having a thickness t ₀ may be manufactured. Further, in FIG. 11, an example is shown in which the annealing step is carried out while pulling the long metal plate 64 in the longitudinal direction, but the annealing step is not limited to this, and the long metal plate 64 is the core 61. It may be carried out in a state of being wound up. That is, batch annealing may be carried out. When the annealing step is performed with the long metal plate 64 wound around the core 61, the long metal plate 64 may have a habit of warping according to the winding diameter of the wound body 62. .. Therefore, depending on the winding diameter of the winding body 62 and the material constituting the base material 55, it is advantageous to carry out the annealing step while pulling the long metal plate 64 in the longitudinal direction.

(Cutting process)
After that, both ends of the long metal plate 64 in the width direction are cut off over a predetermined range, thereby carrying out a cutting step of adjusting the width of the long metal plate 64 to a desired width. In this way, a long metal plate 64 having a desired thickness and width can be obtained.

[Inspection process]
After that, an inspection step of inspecting the steep slope of the obtained long metal plate 64 is carried out. FIG. 12 is a perspective view showing a long metal plate 64 obtained by the steps shown in FIGS. 10 and 11. As shown in FIG. 12, the long metal plate 64 has at least a wavy shape due to the difference in length in the longitudinal direction D1 depending on the position in the width direction D2. In FIG. 12, the side edge of the long metal plate 64 in the width direction D2 is represented by the reference numeral 64e.

The wavy shape appearing on the long metal plate 64 will be described. 13 (a), (b), (c) and (d) are cross-sectional views taken along the lines aa, bb, cc and d of FIG. 12, respectively. The line aa in FIG. 12 is a line extending in the longitudinal direction along the central portion 64c in the width direction of the long metal plate 64, and therefore FIG. 13 (a) is the center in the width direction of the long metal plate 64. The cross section of the long metal plate 64 in the part 64c is shown. Further, the dd line in FIG. 12 is a line extending in the longitudinal direction along the side edge 64e in the width direction of the long metal plate 64, and therefore FIG. 13 (d) is a line in the width direction of the long metal plate 64. The cross section of the long metal plate 64 at the side edge 64e is shown. Medium elongation appears in the long metal plate 64 according to the present embodiment. Therefore, the degree of the wavy shape appearing in the long metal plate 64 in the central portion 64c in the width direction is a position slightly distant from the central portion 64c. For example, at the position of line bb in FIG. 12, it is larger than the degree of the wavy shape appearing on the long metal plate 64. In addition, ear extension also appears in the long metal plate 64 according to the present embodiment, and therefore, the degree of the wavy shape appearing in the long metal plate 64 at the side edge 64e in the width direction is slightly different from the side edge 64e. It is larger than the degree of the wavy shape appearing on the long metal plate 64 at the position, for example, the position of the line cc in FIG.

In the inspection step, first, the steepness at each position in the width direction of the long metal plate 64 is calculated. Here, the "steepness" is a percentage (%) of the height H of the wavy shape with respect to the period L of the wavy shape of the long metal plate 64 in the longitudinal direction, that is, H / L × 100 (%). .. The "period" is the distance between the valleys in the wavy shape of the long metal plate 64, and the "height" is the connection between the valleys from the apex of the wavy peak. It is the distance to a straight line.

For example, in FIG. 13 (a), the periods of the two wavy peaks existing along the line aa of FIG. 12 are indicated by the reference numerals _{La1 and La2 ,} respectively, and the heights are indicated by the reference numerals H, respectively. It is indicated by _a1 and _Ha2 . Although not shown, there are many more wavy peaks along the line aa in FIG. 12 within the target range in the longitudinal direction of the long metal plate 64 when calculating the steepness. is doing. For example, assuming that there are na mountains, the period of each mountain is expressed by _Lana , and the height of each mountain is expressed by _Hana (na is a positive integer). In this case, the steepness of the na peaks is _Hana / _Lana × 100 (%), respectively. The steepness at the position along the aa line in FIG. 12 is the average value of the steepness of na mountains, that is, the average value of _Hana / _Lana × 100 (%) (na is a positive integer). Is calculated as.

As in the case of the position along the line aa of FIG. 12, the steepness at the positions along the lines bb, cc and dd of FIG. 12 is H _bnb / L _bnb ×, respectively. The average value of 100 (%) (nb is a positive integer), the average value of H _cnc / L _cnc × 100 (%) (nc is a positive integer), and H _dnd / L _dnd × 100 (%) (nd is). It is calculated as the average value of positive integers).

The method for calculating the period and height of the wavy shape of the long metal plate 64 is not particularly limited. For example, when calculating the period _Lana and the height Hana of each mountain of the wavy shape of the long metal plate 64 at the position along the line aa in FIG. 12, that is, in the central portion _64c , first, the object and the object are calculated. A distance measuring device capable of measuring the distance between the distance measuring devices is scanned on the long metal plate 64 along the longitudinal direction D1 of the long metal plate 64 at the central portion 64c in the width direction D2, whereby the long metal plate 64 is scanned. The height position of the surface of the plate 64 is measured at predetermined intervals along the longitudinal direction D1. This interval is, for example, in the range of 1 mm to 5 mm. Thereby, the three-dimensional profile of the long metal plate 64 in the central portion 64c can be obtained. In addition, by analyzing the three-dimensional profile, the period _Lana and the height _Hana of each mountain can be calculated. A curve that smoothly connects each measurement point may be adopted as a three-dimensional profile. Further, by repeating such measurement while changing the position in the width direction D2, the period and the height of the wavy shape of the long metal plate 64 at each position in the width direction D2 can be calculated.

FIG. 14 is a graph showing the steepness calculated at each position of the long metal plate 64 in the width direction D2. In FIG. 14, the horizontal axis indicates the position of the long metal plate 64 in the width direction D2, and the vertical axis indicates the steepness. Note that FIG. 14 shows a curve CL that smoothly connects the steepness values calculated at each position of the long metal plate 64 in the width direction D2.

In the upper part of the horizontal axis of FIG. 14, the position in the width direction D2 when the central portion 64c in the width direction D2 is the origin is described in the order of mm. Further, in the lower part of the horizontal axis of FIG. 14, the ratio of the position in the width direction D2 to the total width of the long metal plate 64 is shown in%. In FIG. 14, a case where a long metal plate 64 having a total width of 500 mm is used for manufacturing the vapor deposition mask 20 will be described. Therefore, for example, the ratio at a position + 100 mm away from the central portion 64c in the width direction D2 is + 20%. Further, in FIG. 14, the steepness of the long metal plate 64 at the positions of the aa line, the bb line, the cc line and the dd line in FIG. 12 is indicated by the reference numerals A, B, C and D, respectively. It is shown.

In the long metal plate 64 in which medium elongation and ear elongation occur, in general, as shown in FIG. 14, a maximum value of steepness appears in the vicinity of the central portion 64c in the width direction of the long metal plate 64. (Point A). Further, a minimum value of steepness appears at a position slightly distant from the central portion in the width direction of the long metal plate 64 toward one end side or the other end side (point B). Further, the steepness increases from the point B toward one end or the other end in the width direction (point C), and the value of the steepness becomes maximum at one end or the other end in the width direction (point C). D).

After calculating the steepness at each position of the long metal plate 64 in the width direction D2, the slope of the steepness is calculated. The slope of steepness is a value obtained by dividing the difference between the steepness at the first position in the width direction D2 and the steepness at the second position by the distance between the first position and the second position. For example, the slope of steepness can be obtained by dividing the difference in steepness between two points adjacent to each other in the width direction D2 where the steepness is measured by the distance between these two points. Therefore, when the distance between these two points is shortened, the slope of the steepness corresponds to the slope of the tangent of the curve CL of the steepness shown in FIG.

The long metal plate 64 is sorted based on the calculated steep slope. Here, it is said that only the long metal plate 64 satisfying the condition that the absolute value of the steepness inclination is 6% / m or less in the central portion of the long metal plate 64 is used in the manufacturing process of the vapor deposition mask 20 described later. , The long metal plate 64 is sorted. Here, since the absolute value of the steepness slope indicates the ratio of the change amount of the steepness to the change amount of the horizontal axis in FIG. 14, when the absolute value of the steepness slope is relatively small, the width direction D2 It means that the rate of change in steepness is small and the change in the degree of wavy shape is relatively small. On the other hand, when the absolute value of the slope of the steepness is relatively large, it means that the rate of change of the steepness in the width direction D2 is large and the change in the degree of the wavy shape is relatively large. Therefore, the long metal plate 64 satisfying the condition that the absolute value of the steep slope is 6% / m or less has a relatively small change in the degree of wavy shape in the width direction D2, and such a long metal plate 64 has a relatively small change in the degree of wavy shape. The plate 64 is preferably selected here.

In FIG. 14, in the width direction of the long metal plate 64, the long metal plate 64 is divided into a central portion, one end side portion, and the other end side portion. The central portion of the long metal plate 64 is represented by the reference numeral R1, and the one end side portion located on the one end side in the width direction of the long metal plate 64 with respect to the central portion R1 is represented by the reference numeral R2. The other end side portion located on the other end side in the width direction of the metal plate 64 longer than R1 is represented by the reference numeral R3. The central portion R1 is defined as a portion that occupies 60% of the width of the long metal plate 64 after the cutting step. One end side portion R2 and the other end side portion R3 occupy the same ratio to the width of the long metal plate 64 after the cutting step.

The central portion R1 is an effective area of the long metal plate 64 suitable for manufacturing the vapor deposition mask 20. In general, the portion of the long metal plate 64 on the side edge 64e has a high absolute value of steep slope that is unsuitable for manufacturing the vapor deposition mask 20. For example, one end side portion R2 and the other end side portion R3 each occupy 20% of the width of the long metal plate 64, and the central portion R1 is a long area suitable for manufacturing the vapor deposition mask 20. It is preferable that the portion occupies 60% of the width of the scale metal plate 64. In this case, it becomes possible to allocate a plurality of thin-film deposition masks 20 in the width direction to the central portion R1, and the productivity can be improved. If the steepness of the portion of the long metal plate 64 on the side of the side edge 64e is good, the ratio of the central portion R1 to the width of the long metal plate 64 may exceed 60%. Further, the one end side portion R2 and the other end side portion R3 do not have to occupy the same ratio with respect to the width of the long metal plate 64 after the cutting step. That is, the central portion R1 may be eccentric from the center to one side in the width direction of the vapor deposition mask 20. Further, if at least one vapor deposition mask 20 can be assigned to the long metal plate 64, the ratio of the central portion R1 to the width of the long metal plate 64 may be smaller than 60%.

A specific example of sorting the long metal plate 64 will be described. In sorting, it is confirmed whether or not the maximum value of the absolute value of the slope of the steepness in the central portion R1 occupying 60% of the width of the long metal plate 64 is 6% / m or less. For example, in the long metal plate 64 as shown in FIG. 15, attention is paid to the inclination of the straight line LA, which is the tangent line of the curve CL, and the inclination of the straight line LB. The straight line LA and the straight line LB are tangents in the central portion R1 where the absolute value of the steep slope is considered to be high. When the absolute value of the slope of the straight line LB is larger than the absolute value of the slope of the straight line LA, and the absolute value of the slope of the straight line LB is 6% / m or less, the central portion R1 is the vapor deposition mask 20. It will be an area suitable for manufacturing. That is, the long metal plate 64 shown in FIG. 15 is determined to be a non-defective product capable of increasing productivity. In the example shown in FIG. 15, since the other end side portion R3 is an area unsuitable for manufacturing the vapor deposition mask 20, the slope of the straight line LC which is the tangent line of the steep curve CL in the other end side portion R3 is 6. It may exceed% / m.

Further, for example, in the long metal plate 64 as shown in FIG. 16, attention is paid to the slope of the straight line LD, which is the tangent to the curve CL of steepness, the slope of the straight line LE, and the slope of the straight line LF. The straight line LD and the straight line LE are tangents in the area corresponding to the central portion R1 shown in FIG. 15 where the absolute value of the steep slope is considered to be high. When both the absolute value of the inclination of the straight line LD and the absolute value of the inclination of the straight line LE exceed 6% / m, these areas become areas unsuitable for manufacturing the vapor deposition mask 20. On the other hand, if the absolute value of the slope of the straight line LF is 6% / m or less, this area becomes an area suitable for manufacturing the vapor deposition mask 20, and this area becomes the central portion R1.

By carrying out such sorting, even if a wavy shape appears on the long metal plate 64 due to the large rolling ratio of the long metal plate 64, the degree of the wavy shape can be determined. It is possible to determine in advance whether or not it will be a problem in the subsequent manufacturing process of the vapor deposition mask 20. This makes it possible to improve the production efficiency and yield of the vapor deposition mask 20 manufactured from the long metal plate 64.

The method for obtaining a long metal plate 64 having a total width of 500 mm and having a sharp curve CL as shown in FIG. 14 is not particularly limited.

For example, by rolling the base metal 55, a long metal plate having a total width exceeding 500 mm, for example, a total width of 700 mm is produced, and then both ends of the long metal plate in the width direction are cut over a predetermined range. By carrying out the cutting step, a long metal plate 64 having a width of 500 mm is produced. At this time, in the long metal plate having a total width of 700 mm before the cutting step, as shown by the two-dot chain line in FIG. 14, the portion where the absolute value of the steepness slope becomes very large, for example, 6% / It is conceivable that there is a part exceeding m. It is also conceivable that a portion having a relatively small absolute value of steep slope exists in a portion deviated from the center of a long metal plate having a width of 700 mm. In this case, instead of cutting off both ends of the 700 mm wide long metal plate evenly over a predetermined range, both ends of the 700 mm wide long metal plate may be cut off unevenly.

For example, before the cutting step, an observation step of observing the wavy shape of a long metal plate having a total width of 700 mm is carried out. This observation step may be carried out visually by the operator, or may be carried out by using the above-mentioned distance measuring device.

At this time, for example, when it is confirmed that a region having a relatively large absolute value of steep slope spreads over a wide area on one end side of the long metal plate, the long metal plate having a total width of 700 mm is used. The cutting step may be carried out so that one end side is cut off in a wider area than the other end side. For example, it is conceivable to cut off over 150 mm on the one end side and cut off over 50 mm on the other end side.

Further, when the portion having the absolute value of the inclination of the relatively small steepness extends to the portion shifted from the center of the long metal plate having a width of 700 mm to one end side, the portion having such a small steepness The cutting step may be carried out so that the portion having the absolute value of the inclination becomes the central portion R1 of the long metal plate 64 having a width of 700 mm after the cutting step. For example, it is conceivable to cut off over 50 mm on the one end side and over 150 mm on the other end side.

As described above, by determining the portion of the long metal plate to be cut off in the cutting step based on the result of the observation step, the long metal plate 64 having a more ideal steepness profile can be obtained.

Method for Fabricating Vapor Deposition Mask Next, a method for fabricating the vapor deposition mask 20 using the long metal plate 64 selected as described above will be described mainly with reference to FIGS. 17 to 25. In the method for manufacturing the vapor deposition mask 20 described below, as shown in FIG. 17, a long metal plate 64 is supplied, a through hole 25 is formed in the long metal plate 64, and the long metal plate 64 is further cut. By doing so, a vapor deposition mask 20 made of a single-wafer-shaped metal plate 21 can be obtained.

More specifically, the method for manufacturing the vapor deposition mask 20, the process of supplying the long metal plate 64 extending in a strip shape, and the etching using the photolithography technique are applied to the long metal plate 64 to apply the long metal plate 64. The process of forming the first recess 30 from the side of the first surface 64a on the 64 and the etching using the photolithography technique are applied to the long metal plate 64, and the long metal plate 64 is first from the side of the second surface 64b. 2 Includes a step of forming the recess 35. Then, the first recess 30 and the second recess 35 formed in the long metal plate 64 communicate with each other to form a through hole 25 in the long metal plate 64. In the examples shown in FIGS. 18 to 25, the step of forming the first recess 30 is performed before the step of forming the second recess 35, and the step of forming the first recess 30 and the formation of the second recess 35 are performed. A step of sealing the produced first recess 30 is further provided between the steps. The details of each step will be described below.

FIG. 17 shows a manufacturing apparatus 60 for manufacturing the vapor deposition mask 20. As shown in FIG. 17, first, a winding body (metal plate roll) 62 in which a long metal plate 64 is wound around a core 61 is prepared. Then, the core 61 rotates and the winding body 62 is unwound, so that the long metal plate 64 extending in a strip shape is supplied as shown in FIG. The long metal plate 64 is formed with a through hole 25 to form a single-wafer-shaped metal plate 21 and further a vapor deposition mask 20.

The supplied long metal plate 64 is conveyed to the etching apparatus (etching means) 70 by the conveying roller 72. The etching apparatus 70 performs each of the processes shown in FIGS. 18 to 25. In this embodiment, it is assumed that a plurality of vapor deposition masks 20 are assigned in the width direction of the long metal plate 64. That is, a plurality of thin-film deposition masks 20 are manufactured from a region occupying a predetermined position of the long metal plate 64 in the longitudinal direction. In this case, preferably, a plurality of vapor deposition masks 20 are allocated to the long metal plate 64 so that the longitudinal direction of the vapor deposition mask 20 coincides with the rolling direction of the long metal plate 64.

First, as shown in FIG. 18, resist films 65c and 65d containing a negative photosensitive resist material are formed on the first surface 64a and the second surface 64b of the long metal plate 64. As a method for forming the resist films 65c and 65d, a film having a layer containing a photosensitive resist material such as an acrylic photocurable resin, a so-called dry film, is formed on the first surface 64a of the long metal plate 64 and on the first surface 64a. A method of pasting on two sides 64b is adopted.

Next, exposure masks 68a and 68b are prepared so that light is not transmitted to the region of the resist films 65c and 65d to be removed, and the exposure masks 68a and 68b are placed on the resist films 65c and 65d as shown in FIG. 19, respectively. Place in. As the exposure masks 68a and 68b, for example, a glass dry plate having the resist films 65c and 65d so that light is not transmitted to the region to be removed is used. Then, the exposure masks 68a and 68b are sufficiently adhered to the resist films 65c and 65d by vacuum adhesion. As the photosensitive resist material, a positive type may be used. In this case, as the exposure mask, an exposure mask that allows light to pass through the region of the resist film to be removed is used.

Then, the resist films 65c and 65d are exposed through the exposure masks 68a and 68b (exposure step). Further, the resist films 65c and 65d are developed in order to form an image on the exposed resist films 65c and 65d (development step). As described above, as shown in FIG. 20, the first resist pattern 65a is formed on the first surface 64a of the long metal plate 64, and the second resist pattern is formed on the second surface 64b of the long metal plate 64. 65b can be formed. The developing step may include a resist heat treatment step for increasing the hardness of the resist films 65c and 65d, or for making the resist films 65c and 65d more firmly adhere to the long metal plate 64. The resist heat treatment step is carried out in an atmosphere of an inert gas such as argon gas, helium gas and nitrogen gas, for example, at 100 ° C. or higher and 400 ° C. or lower.

Next, as shown in FIG. 21, a first surface etching step of etching a region of the first surface 64a of the long metal plate 64 that is not covered by the first resist pattern 65a with a first etching solution is performed. implement. For example, the first etching solution is directed from the nozzle arranged on the side facing the first surface 64a of the long metal plate 64 to be conveyed toward the long metal plate 64 first surface 64a through the first resist pattern 65a. Is jetted. As a result, as shown in FIG. 21, erosion by the first etching solution proceeds in the region of the long metal plate 64 that is not covered by the first resist pattern 65a. As a result, a large number of first recesses 30 are formed on the first surface 64a of the long metal plate 64. As the first etching solution, for example, a solution containing ferric chloride solution and hydrochloric acid is used.

After that, as shown in FIG. 22, the first recess 30 is covered with the resin 69 having resistance to the second etching solution used in the subsequent second surface etching step. That is, the first recess 30 is sealed with the resin 69 having resistance to the second etching solution. In the example shown in FIG. 22, the film of the resin 69 is formed so as to cover not only the formed first recess 30 but also the first surface 64a (first resist pattern 65a).

Next, as shown in FIG. 23, a region of the second surface 64b of the long metal plate 64 that is not covered by the second resist pattern 65b is etched to form a second recess 35 on the second surface 64b. Perform a two-sided etching process. The second surface etching step is carried out until the first recess 30 and the second recess 35 communicate with each other so that the through hole 25 is formed. As the second etching solution, for example, a solution containing ferric chloride solution and hydrochloric acid is used as in the case of the above-mentioned first etching solution.

The erosion by the second etching solution is performed at the portion of the long metal plate 64 that is in contact with the second etching solution. Therefore, the erosion proceeds not only in the normal direction N (thickness direction) of the long metal plate 64 but also in the direction along the plate surface of the long metal plate 64. Here, preferably, in the second surface etching step, two second recesses 35 formed at positions facing two adjacent holes 66a of the second resist pattern 65b are located between the two holes 66a. It ends before merging on the back side of the bridge portion 67a. As a result, as shown in FIG. 24, the above-mentioned top portion 43 can be left on the second surface 64b of the long metal plate 64.

After that, as shown in FIG. 25, the resin 69 is removed from the long metal plate 64. The resin 69 can be removed, for example, by using an alkaline stripping solution. When an alkaline stripping solution is used, as shown in FIG. 25, the resist patterns 65a and 65b are removed at the same time as the resin 69. After removing the resin 69, the resist patterns 65a and 65b may be removed separately from the resin 69 by using a peeling liquid different from the peeling liquid for peeling the resin 69.

The long metal plate 64 in which a large number of through holes 25 are formed is conveyed to the cutting device (cutting means) 73 by the conveying rollers 72 and 72 that rotate while holding the long metal plate 64 in a narrow position. Will be done. The above-mentioned supply core 61 is rotated through the tension (tensile stress) acting on the long metal plate 64 by the rotation of the transport rollers 72, 72, and the long metal plate 64 is supplied from the winding body 62. It has become like.

After that, the long metal plate 64 in which a large number of through holes 25 are formed is cut to a predetermined length and width by the cutting device 73, whereby the single-wafer-shaped metal plate 21 in which the large number of through holes 25 are formed, that is, A vapor deposition mask 20 is obtained.

Method for determining the quality of the vapor deposition mask Next, a method for determining the quality of the vapor deposition mask 20 by measuring the above-mentioned dimensions X1 and X2 of the vapor deposition mask 20 will be described with reference to FIGS. 12 and 26 to 28. Here, a method of measuring the dimensions X1 and the dimensions X2 and determining the quality of the vapor deposition mask 20 based on the measurement results will be described. That is, by measuring the dimensions X1 and X2, it is possible to detect whether or not the through holes 25 of the vapor deposition mask 20 are arranged as designed, whereby the position accuracy of the through holes 25 of the vapor deposition mask 20 can be detected. Can determine whether or not meets a predetermined criterion.

By the way, in order to obtain a metal plate 21 having a small thickness, it is necessary to increase the rolling ratio when the base metal is rolled to manufacture the metal plate 21. However, the larger the rolling ratio, the greater the degree of non-uniformity of deformation due to rolling. For example, as shown in FIG. 12, the long metal plate 64 has at least a wavy shape due to the difference in length in the longitudinal direction D1 depending on the position in the width direction D2. For example, a wavy shape appears on the side edge 64e extending along the longitudinal direction D1 of the long metal plate 64.

On the other hand, in the above-mentioned exposure step for exposing the resist films 65c and 65d, the exposure mask is brought into close contact with the resist films 65c and 65d on the long metal plate 64 by vacuum suction or the like. Therefore, as shown in FIG. 26, the wavy shape of the side edge 64e of the long metal plate 64 is compressed due to the close contact with the exposure mask, and the long metal plate 64 becomes substantially flat. In this state, as shown by the dotted line in FIG. 26, the resist films 65c and 65d provided on the long metal plate 64 are exposed in a predetermined pattern.

When the exposure mask is removed from the long metal plate 64, a wavy shape appears again on the side edge 64e of the long metal plate 64. FIG. 27 is a diagram showing a long metal plate 64 in a state where a plurality of vapor deposition masks 20 are allocated along the width direction D2 by being etched. FIG. 27 shows an example in which three vapor deposition masks 20 are assigned to the central portion R1 of the long metal plate 64. As shown in FIG. 27, of the three assigned vapor deposition masks 20, at least the vapor deposition mask 20 facing the side edge 64e of the long metal plate 64 is formed from a portion having a relatively large wavy shape. In FIG. 27, reference numeral 27a is a side edge of the vapor deposition mask 20 allocated so as to face the side edge 64e of the long metal plate 64, which is located on the center side of the long metal plate 64 (hereinafter referred to as the first side edge). (Referred to as one side edge). Further, in FIG. 27, reference numeral 27b represents a side edge (hereinafter, referred to as a second side edge) located on the opposite side of the first side edge 27a and facing the side edge 64e of the long metal plate 64. As shown in FIG. 27, in the vapor deposition mask 20 facing the side edge 64e of the long metal plate 64, the portion on the side of the second side edge 27b has a larger wavy shape than the portion on the side of the first side edge 27a. Formed from parts.

FIG. 28 is a plan view showing a vapor deposition mask 20 obtained by cutting out a vapor deposition mask 20 facing the side edge 64e of the long metal plate 64 from the long metal plate 64. As described above, when the portion of the vapor deposition mask 20 on the side of the second side edge 27b is formed from a portion having a larger wavy shape than the portion on the side of the first side edge 27a, the second side edge 27b. The length of the side portion in the longitudinal direction D1 is longer than the length of the portion on the side of the first side edge 27a in the longitudinal direction D1. That is, the dimension of the second side edge 27b in the longitudinal direction D1 (dimension along the second side edge 27b) is larger than the dimension of the first side edge 27a (dimension along the first side edge 27a). In this case, as shown in FIG. 28, the vapor deposition mask 20 has a curved shape that is convex in the direction from the first side edge 27a side to the second side edge 27b side. Hereinafter, such a curved shape is also referred to as a C-shaped shape.

In the present embodiment, the measurement of the dimension X1 and the dimension X2 of the vapor deposition mask 20 is performed without applying tension to the vapor deposition mask 20. Hereinafter, the quality determination method according to the present embodiment will be described.

(Good / bad judgment system)
FIG. 29 is a diagram showing a quality determination system that measures the dimensions of the vapor deposition mask 20 and determines the quality. As shown in FIG. 29, the quality determination system 80 includes a stage 81 on which the vapor deposition mask 20 is placed, a dimension measuring device 82, and a determination device 83.

The dimension measuring device 82 is provided above the stage 81, for example, and includes a measuring camera (imaging unit) that images the vapor deposition mask 20 and creates an image. At least one of the stage 81 and the dimension measuring device 82 is movable with respect to each other. In the present embodiment, the stage 81 is stationary, and the dimension measuring device 82 can move in two directions parallel to the stage 81 and orthogonal to each other and in a direction perpendicular to the stage 81. This makes it possible to move the dimension measuring device 82 to a desired position. The pass / fail determination system 80 may be configured so that the dimension measuring device 82 is stationary and the stage 81 is movable.

The dimension of the vapor deposition mask 20 can be measured by a different method depending on the size of the portion of the vapor deposition mask 20 to be measured.

When the dimension of the measurement target is relatively small (for example, when it is several hundred μm or less), the measurement target can be contained within the field of view of the measurement camera of the dimension measurement device 82, so that the measurement camera does not need to be moved. Measure the dimensions of the object to be measured.

On the other hand, when the dimension of the measurement target is relatively large (for example, in the case of mm order or more), it becomes difficult to fit the measurement target within the field of view of the measurement camera of the dimension measurement device 82, so the measurement camera is moved. Measure the dimensions of the object to be measured. In this case, the dimension measuring device 82 calculates the dimensions of the vapor deposition mask 20 based on the image captured by the measuring camera and the moving amount of the measuring camera (if the stage 81 moves, the moving amount thereof).

The determination device 83 determines whether or not the above-mentioned equations (1) and (2) are satisfied based on the measurement result by the dimension measuring device 82. The determination device 83 includes an arithmetic unit and a storage medium. The arithmetic unit is, for example, a CPU. The storage medium is, for example, a memory such as a ROM or RAM. The determination device 83 executes the determination process of the dimensions of the vapor deposition mask 20 by the arithmetic unit executing the program stored in the storage medium.

(Dimension measurement method)
First, a measurement step of measuring the dimensions X1 and the dimensions X2 of the vapor deposition mask 20 is carried out.
In this case, first, the vapor deposition mask 20 is quietly placed on the stage 81. At this time, the vapor deposition mask 20 is placed without being fixed to the stage 81. That is, no tension is applied to the vapor deposition mask 20. The vapor deposition mask 20 placed on the stage 81 may be curved in a C shape, for example, as shown in FIG. 28.

Subsequently, dimensions X1 and dimensions X2 (see FIG. 28) of the vapor deposition mask 20 on the stage 81 are measured. In this case, the measuring camera of the dimension measuring device 82 shown in FIG. 29 captures the P1, Q1, P2, and Q2 points of the vapor deposition mask 20, and the captured image and the measuring camera move. The coordinates of the P1, Q1, P2, and Q2 points are calculated based on the movement amount. Then, based on the calculated coordinates of each point, the dimension X1 which is the linear distance from the P1 point to the Q1 point and the dimension X2 which is the linear distance from the P2 point to the Q2 point are calculated.

(Judgment method)
Next, a determination step of determining whether or not the calculated dimensions X1 and X2 satisfy the above-mentioned equations (1) and (2) based on the measurement result by the dimension measuring device 82 is performed. do. That is, the dimension X1 and the dimension X2 calculated as described above are substituted into the above-mentioned equation (1), the design value is substituted into α _X , and the left side of the equation (1) is calculated as an absolute value. .. It is determined whether or not the value on the left side is 40 μm or less. Similarly, the calculated dimensions X1 and X2 are substituted into the above-mentioned equation (2), the left side of the equation (2) is calculated as an absolute value, and whether or not the value on the left side is 60 μm or less. Is determined. The vapor deposition mask 20 satisfying the formulas (1) and (2) is determined to be a non-defective product (pass) and is used in the vapor deposition mask device 10 described later.

Here, in the vapor deposition mask 20 determined to be a non-defective product, the dimension X1 from the P1 point to the Q1 point and the dimension X2 from the P2 point to the Q2 point satisfy the above-mentioned equations (1) and (2). There is.
As a result, although details will be described later, in the vapor deposition mask 20 in which the dimensions X1 and the dimensions X2 are determined to be non-defective products by satisfying the predetermined conditions by the formula (1), the deviations from the design values of the dimensions X1 and the dimensions X2 are deviated. It has been reduced. Therefore, when the vapor deposition mask 20 is stretched, the amount of shrinkage in the width direction D2 can be kept within a desired range. Further, according to the equation (2), the difference between the dimension X1 and the dimension X2 can be reduced. Therefore, it is possible to suppress the elongation of the longitudinal direction D1 from being different in the width direction D2 at the time of stretching, and it is possible to suppress the positional deviation of the through hole 25 in the width direction D2. As a result, by manufacturing the vapor deposition mask device 10 using the vapor deposition mask 20 determined to be a non-defective product, the position accuracy of each through hole 25 of the vapor deposition mask 20 in the vapor deposition mask device 10 can be improved, and at the time of installation. The positional accuracy of the through hole 25 can be improved.

Further, the P1 point and the P2 point of the vapor deposition mask 20 determined to be non-defective products are positioned at the center points of the corresponding through holes 25 of the first effective region 22A arranged on the side of the first ear portion 17a. The Q1 and Q2 points are positioned at the center points of the corresponding through holes 25 of the second effective region 22B located closest to the second selvage portion 17b. As a result, the good product determination of the vapor deposition mask 20 can be performed based on the distance between two relatively distant points in the longitudinal direction D1, and the good product determination accuracy of the thin film deposition mask 20 can be improved.

Further, the P1 point and the P2 point of the vapor deposition mask 20 judged to be non-defective products are positioned at the center points of the corresponding through holes 25 formed on the side of the first selvage portion 17a, and the Q1 point and the Q2 point. Is located at the center point of the corresponding through hole 25 formed on the side of the second selvage portion 17b. As a result, the good product determination of the vapor deposition mask 20 can be performed based on the distance between two points further separated in the longitudinal direction D1, and the good product determination accuracy of the thin film deposition mask 20 can be improved.

Method for Manufacturing a Vapor Deposition Mask Device Next, a method for manufacturing a vapor deposition mask device 10 using a vapor deposition mask 20 determined to be a non-defective product will be described. In this case, as shown in FIG. 3, a plurality of thin-film deposition masks 20 are stretched on the frame 15. More specifically, tension is applied to the vapor deposition mask 20 in the longitudinal direction D1 of the vapor deposition mask 20, and the ears 17a and 17b of the vapor deposition mask 20 in the tensioned state are fixed to the frame 15. The selvages 17a and 17b are fixed to the frame 15 by, for example, spot welding.

Here, in the above-mentioned inspection step, only the long metal plate 64 satisfying the condition that the absolute value of the steepness inclination is 6% / m or less in the central portion R1 indicating 60% of the width of the metal plate 64 is vapor-deposited. It is used in the manufacturing process of the mask 20. As a result, in the portion of the metal plate 64 where the vapor deposition mask 20 is formed (that is, the central portion R1), the rate of change in steepness in the width direction D2 of the vapor deposition mask 20 is relatively small, and the degree of wavy shape changes. It is relatively small. Therefore, as compared with the case where such sorting is not performed, the variation in steepness in each vapor deposition mask 20 and, by extension, the variation in the position of each through hole 25 in the effective region 22 are uniformly reduced.

When the vapor deposition mask 20 is stretched on the frame 15, tension in the longitudinal direction D1 is applied to the vapor deposition mask 20. In this case, as shown in FIG. 30, the first end portion 26a of the vapor deposition mask 20 is gripped by the first clamp 86a and the second clamp 86b arranged on both sides of the central axis AL, and the second end portion 26b is held. Is gripped by the third clamp 86c and the fourth clamp 86d arranged on both sides of the central axis AL. The first tension portion 87a is connected to the first clamp 86a, and the second tension portion 87b is connected to the second clamp 86b. A third tension portion 87c is connected to the third clamp 86c, and a fourth tension portion 87d is connected to the fourth clamp 86d. When tension is applied to the vapor deposition mask 20, the first tension portion 87a and the second tension portion 87b are driven to move the first clamp 86a and the second clamp 86b to the third clamp 86c and the fourth clamp 86d. By moving the vapor deposition mask 20, tensions T1 and T2 can be applied to the vapor deposition mask 20 in the longitudinal direction D1. In this case, the tension applied to the vapor deposition mask 20 is the sum of the tension T1 of the first tension portion 87a and the tension T2 of the second tension portion 87b. The tension portions 87a to 87d may include, for example, an air cylinder. Further, the third clamp 86c and the fourth clamp 86d may be made immovable without using the third tension portion 87c and the fourth tension portion 87d.

When tensions T1 and T2 in the longitudinal direction D1 are applied to the vapor deposition mask 20, the vapor deposition mask 20 expands in the longitudinal direction D1 but contracts in the width direction D2. At the time of tensioning, the tension T1 of the first tension portion 87a is such that all the through holes 25 of the vapor deposition mask 20 elastically deformed in this way are positioned within an allowable range with respect to a desired position (vapor deposition target position). And the tension T2 of the second tension portion 87b are adjusted. As a result, the elongation in the longitudinal direction D1 and the contraction in the width direction D2 of the vapor deposition mask 20 can be locally adjusted, and each through hole 25 can be positioned within an allowable range. For example, the vapor deposition mask 20 in a state where no tension is applied is curved in a C shape so as to be convex in the direction from the side of the first side edge 27a to the side of the second side edge 27b as shown in FIG. 28. If so, the tension T1 of the first tension portion 87a on the side of the first side edge 27a may be larger than the tension T2 of the second tension portion 87b. This makes it possible to apply a greater tension to the portion on the side of the first side edge 27a than on the portion on the side of the second side edge 27b. Therefore, the portion on the side of the first side edge 27a can be extended more than the portion on the side of the second side edge 27b, and each through hole 25 can be easily positioned within the allowable range. On the contrary, the vapor deposition mask 20 in a state where tension is not applied is curved in a C shape so as to be convex in the direction from the side of the second side edge 27b toward the side of the first side edge 27a. If so, the tension T2 of the second tension portion 87b on the side of the second side edge 27b may be larger than the tension T1 of the first tension portion 87a. This makes it possible to apply a greater tension to the portion on the side of the second side edge 27b than on the portion on the side of the first side edge 27a. Therefore, the portion on the side of the second side edge 27b can be extended more than the portion on the side of the first side edge 27a, and each through hole 25 can be easily positioned within the allowable range.

However, even when the tension applied to the vapor deposition mask 20 is locally adjusted, it is difficult to position each through hole 25 within the allowable range depending on the position accuracy of the through hole 25 formed in the vapor deposition mask 20. It is possible that For example, when the dimension X1 and the dimension X2 are largely deviated from the design value, the elongation of the vapor deposition mask 20 in the longitudinal direction D1 becomes large and the shrinkage in the width direction D2 becomes large, or conversely, the longitudinal direction. The elongation of D1 is small and the contraction of D2 in the width direction is small. As a result, it may be difficult to position each through hole 25 within an allowable range with respect to a desired position (deposited target position) at the time of stretching. The formula (1) is for suppressing the occurrence of misalignment of each through hole 25 at the time of stretching due to such a cause.

That is, as in the present embodiment, the dimension X1 and the dimension X2 of the vapor deposition mask 20 placed stationary on the stage 81 or the like satisfy the formula (1), so that the vapor deposition mask 20 at the time of stretching is D1 in the longitudinal direction. The amount of elongation can be kept within a desired range. Therefore, the amount of shrinkage of the vapor deposition mask 20 in the width direction D2 at the time of stretching can be kept within a desired range. As a result, by satisfying the equation (1) by the dimension X1 and the dimension X2, it is possible to facilitate the position adjustment of each through hole 25 at the time of stretching.

Further, in general, even when the vapor deposition mask 20 is formed from a long metal plate 64 having a wavy shape, each through hole 25 is positioned at a desired position at the time of stretching depending on the degree of the wavy shape. It may be difficult to do so. This is because the longitudinal dimension in the width direction D2 differs depending on the degree of the wavy shape in the width direction D2 of the long metal plate 64.
In this case, the vapor deposition mask 20 can be curved in a C shape as shown in FIG. 28 in a state where the dimensions X1 and the dimensions X2 are different from each other and are not stretched.

For example, in the curved vapor deposition mask 20 as shown in FIG. 28, the dimension X1 is shorter than the dimension X2 in the non-stretched state. Therefore, when the vapor deposition mask 20 is stretched, as shown in FIG. 31, a tensile force is applied to the vapor deposition mask 20 so that the dimension X1 becomes equal to the dimension X2. In this case, the portion on the side of the first side edge 27a extends more than the portion on the side of the second side edge 27b, and the central position of the vapor deposition mask 20 in the longitudinal direction D1 shifts to the side of the first side edge 27a. As a result, the through hole 25 can be displaced in the width direction D2. Further, even when the masks are stretched so that the dimensions X1 and the dimensions X2 are equal to each other, the curved shape of the vapor deposition mask 20 may be inverted as shown in FIG. 32. In this case, the first side edge 27a becomes convex and the second side edge 27b bends concavely. Even in this case, the through hole 25 can be displaced in the width direction D2.

When the positional deviation of the through holes 25 in the width direction D2 becomes large in this way, it may be difficult to position all the through holes 25 within an allowable range with respect to a desired position (deposited target position). The formula (2) is for suppressing the occurrence of misalignment of each through hole 25 at the time of stretching due to such a cause.

That is, as in the present embodiment, the length X1 and the dimension X2 of the vapor-film deposition mask 20 placed stationary on the stage 81 or the like satisfy the formula (2), so that the length of the vapor-film deposition mask 20 in the longitudinal direction D1 becomes longer. It is possible to suppress the difference in the width direction D2, and it is possible to suppress the difference in the elongation in the longitudinal direction D1 in the width direction D2 at the time of stretching. Therefore, it is possible to suppress the positional deviation of the through hole 25 in the width direction D2 at the time of stretching. As a result, by satisfying the equation (2) in the dimensions X1 and X2, each through hole 25 can be easily positioned within the permissible range at the time of stretching.

By the way, as described above, the vapor deposition mask 20 is formed of a long metal plate 64 having a wavy shape. Therefore, when the degree of wavy shape differs greatly in the width direction D2 of the long metal plate 64, the elongation of the vapor deposition mask 20 produced from the long metal plate 64 in the length direction D1 differs in the width direction D2. obtain. In this case, it may be difficult to position all the through holes 25 of the vapor deposition mask 20 within a predetermined range at the time of stretching.

However, in the present embodiment, as described above, the central portion R1 of the long metal plate 64 preselected based on the absolute value of the steep slope is used. Therefore, as compared with the case where such sorting is not performed, the variation in the steepness of the portion of the long metal plate 64 allocated to each vapor deposition mask 20 is reduced, and the degree of the wavy shape in the width direction D2 is significantly different. You can avoid that. This makes it possible to prevent the length of the vapor deposition mask 20 from being different in the width direction D2 in the longitudinal direction D1. In this case, it is possible to prevent the elongation of the vapor deposition mask 20 in the longitudinal direction D1 from being different in the width direction D2 at the time of stretching. Therefore, the variation in the position of each through hole 25 in the effective region 22 is uniformly reduced at the time of stretching, and each through hole 25 can be easily positioned within an allowable range with respect to the vapor deposition target position. As a result, it is possible to facilitate the adjustment of the position of each through hole 25 at the time of stretching.

Thin-film deposition method Next, a method of depositing the vapor-deposited material 98 on the organic EL substrate 92 using the obtained vapor-film mask device 10 will be described.

In this case, first, as shown in FIG. 1, the frame 15 is arranged so that the vapor deposition mask 20 faces the organic EL substrate 92. Subsequently, the vapor deposition mask 20 is brought into close contact with the organic EL substrate 92 using the magnet 93. Then, in this state, the vapor deposition material 98 is evaporated, and the vapor deposition material 98 is made to fly to the organic EL substrate 92 through the through hole 25 of the vapor deposition mask 20. As a result, the vapor deposition material 98 can be attached to the organic EL substrate 92 in a predetermined pattern.

As described above, according to the present embodiment, the long metal plate 64 in which the absolute value of the inclination of the steepness in the central portion R1 where the vapor deposition mask 20 can be formed is 6% / m or less is used. As a result, it is possible to reduce the change in the degree of wavy shape in the central portion R1, and it is possible to suppress that the length of the vapor deposition mask 20 in the longitudinal direction D1 is different in the width direction D2. Therefore, the position accuracy of the through hole 25 at the time of stretching can be improved. As a result, the vapor deposition material 98 can be vapor-deposited on the substrate 92 with high position accuracy, and a high-definition organic EL display device 100 can be manufactured.

It is possible to make various changes to the above-described embodiment. Hereinafter, modification examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding portions in the above-described embodiment will be used for the portions that can be configured in the same manner as in the above-described embodiment. Duplicate explanations will be omitted. Further, when it is clear that the action and effect obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

(Modified example of manufacturing method of thin-film mask)
In the above-described embodiment, an example of measuring the dimensions of the vapor deposition mask 20 produced by etching a rolled metal plate is shown. However, the dimensions of the vapor deposition mask 20 produced by other methods such as plating can also be measured using the above-mentioned dimension measurement method and the quality determination system 80.

(Modification example of dimensions X1 and X2)
In the above-described embodiment, the points P1 and P2 are the penetrations formed on the side of the first ear portion 17a in the first effective region 22A arranged on the side of the first ear portion 17a. An example of being positioned at the center point of the hole 25 is shown. However, the present invention is not limited to this, and the through hole 25 in which the P1 point and the P2 point are located is an arbitrary through hole 25 in the first effective region 22A arranged on the side of the first selvage portion 17a. May be good. Further, the through hole 25 in which the P1 point and the P2 point are positioned may be the through hole 25 of the effective region 22 other than the first effective region 22A. The same applies to points Q1 and Q2. Further, the points P1 and Q1 may not be positioned in the through hole 25 as long as they are any two points arranged along the longitudinal direction D1 of the vapor deposition mask 20. For example, it may be any recess formed on the first surface 20a or the second surface 20b of the vapor deposition mask 20, or another through hole not intended to allow the vapor deposition material 98 to pass through, as well as the vapor deposition mask 20. It may be the external dimension of.

Next, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to the description of the following Examples as long as the gist of the present invention is not exceeded.

(1st winding body and 1st sample)
First, by carrying out the above-mentioned rolling step, slitting step, annealing step and cutting step on the base material composed of the Invar material, a plurality of rolled bodies in which a long metal plate was wound were manufactured.

Specifically, first, the first rolling step of performing the first hot rolling step and the first cold rolling step in this order is carried out, and then both ends of the long metal plate in the width direction are 3 to 5 mm each. A first slit step of cutting off over the range of 1 was carried out, and then a first annealing step of continuously rolling a long metal plate at 500 ° C. for 60 seconds was carried out. Further, a second rolling step including a second cold rolling step is carried out on the long metal plate that has undergone the first annealing step, and then both ends of the long metal plate in the width direction are 3 to 5 mm each. A second slitting step of cutting off over the range was carried out, and then a second annealing step of continuously rolling the long metal plate at 500 ° C. for 60 seconds was carried out. As a result, a long metal plate 64 having a desired thickness and a width of about 600 mm was obtained. After that, both ends of the long metal plate 64 in the width direction are cut off over a predetermined range, whereby a cutting step of finally adjusting the width of the long metal plate 64 to a desired width, specifically, a width of 500 mm is carried out. did.

In the cold rolling step described above, pressure was adjusted using a backup roller. Specifically, the shape of the backup roller of the rolling mill and the pressure were adjusted so that the shape of the long metal plate 64 was symmetrical. Further, the cold rolling step was performed while cooling the long metal plate 64 with rolling oil, for example, kerosene. After the cold rolling step, a cleaning step of cleaning a long metal plate with a hydrocarbon-based cleaning agent was performed. After the cleaning step, the above-mentioned slit step, annealing step and cutting step were carried out.

Then, the tip of the winding body was cut off using a shear to obtain a first sample 200 made of a metal plate having a width of 500 mm and a projection length of 700 mm. The "projected length" is the length (dimension in the rolling direction) of the metal plate when the metal plate is viewed from directly above, that is, when the wavy shape of the metal plate is ignored. The width of the first sample 200 is the distance between the pair of ends 201 and 202 of the first sample 200 in the width direction. The pair of ends 201 and 202 of the first sample 200 are portions formed by undergoing a cutting step of cutting off both ends in the width direction of the metal plate obtained by the rolling step and the annealing step over a predetermined range, and are formed substantially straight. It is extended.

Next, as shown in FIG. 33, the first sample 200 was placed horizontally on the surface plate 210. At that time, the first sample 200 was gently placed on the surface plate 210 so that the first sample 200 would not have a partial dent. Next, at one end 201 of the first sample 200, the steepness of the first sample 200 in a region having a projection length of 500 mm was measured. The region having a projection length of 500 mm is a region excluding the region within 100 mm from both ends 203 and 204 in the longitudinal direction of the sample 200 from the first sample 200 having a projection length of 700 mm. The area within 100 mm from both ends 203 and 204 is excluded from the measurement target in order to prevent the influence of the distortion of the first sample 200 due to the cutting by the shear on the measurement result of steepness. In FIG. 33, a region having a projected length of 500 mm is shown by a long-dotted line.

In the measurement, first, as shown by the arrow s in FIG. 33, the distance measuring device using the laser beam is moved relative to the first sample 200 along the longitudinal direction of the first sample 200, and is longitudinally. The height position of the surface at one end 201 of the first sample 200 in the direction was continuously measured, and the profile of the long metal plate 64 was drawn with a smooth curve. Then, based on the obtained curve, the period and height were calculated for each of the plurality of peaks included in the curve. Next, the steepness of each mountain was calculated, and the average value of the steepness of each mountain was calculated. In this way, the steepness of the first sample 200 at one end 201 was calculated.

As a distance measuring device for measuring the height position of the surface of the first sample 200, an OPTELICS H1200 manufactured by Lasertec Co., Ltd., which is a laser microscope, was used. The element to be moved at the time of measurement may be either a distance measuring device or the first sample 200, but here, a turret for moving the head composed of the OPTELICS H1200 in the XY direction with the surface plate 210 as a stage. Automatic measurement was performed by assembling. As the stage, an auto stage of 500 mm × 500 mm was used. A laser interferometer was used to control the autostage in the XY direction.

Next, the steepness of the first sample 200 was similarly measured at a position displaced by 2 mm from one end 201 to the other end 202 side. The steepness of the first sample 200 at each position in the width direction was measured by repeatedly performing the above-mentioned measurement while changing the position of the first sample 200 in the width direction at a predetermined pitch p. Here, the pitch p is set to 2 mm. The obtained measurement results include the above-mentioned steepness measurement result in the one-end side portion R2 including the one end 201, the steepness measurement result in the above-mentioned other end side portion R3 including the other end 202, and the above-mentioned including the central portion. The measurement result of the steepness in the central portion R1 of is included. The central portion R1 is a portion where the distance from one end 201 is within the range of 100 to 400 mm when one end 201 is used as a reference. Further, the one end side portion R2 is a portion in which the distance from one end 201 is within the range of 0 to 100 mm when one end 201 is used as a reference. Further, the other end side portion R3 is a portion where the distance from one end 201 is within the range of 400 to 500 mm when one end 201 is used as a reference.

Next, the slope of the steepness of the first sample 200 was calculated. The slope of the steepness was calculated by dividing the difference in the steepness between two points adjacent to each other in the width direction D2 where the steepness was measured by the distance between the two points.

(2nd to 17th windings and 2nd to 17th samples)
In the same manner as in the case of the first winding body, the second winding body to the 17th winding body were manufactured from the base material composed of the Invar material. Further, in the same manner as in the case of the first winding body, the slope of the steepness of the sample taken out from each winding body was measured with respect to the second winding body to the 17th winding body.

From such a long metal plate 64 of the 1st to 17th winding bodies, a thin-film deposition mask 20 was produced by using the above-mentioned method for manufacturing a vapor-film deposition mask. That is, a through hole 25 was formed and cut by a cutting device 73 to obtain a vapor deposition mask 20. Here, a thin-film deposition mask 20 having a width dimension of 67 mm was produced.

FIG. 34 shows the steepness difference of each manufactured vapor deposition mask 20 and the absolute value of the steepness inclination. As the steepness shown here, in each sample, the steepness measured as described above in the form of the long metal plate 64 is used. The steepness difference shown in FIG. 34 shows the difference between the steepness at the position passing through the points P1 and Q1 and the steepness at the position passing through the points P2 and Q2. As the steepness at each position, the steepness at the closest position is used from the steepness at each position in the width direction D2 obtained in the form of the long metal plate 64. The absolute value of the steepness slope was obtained by dividing the steepness difference by the distance between points P1 and P2 (or the distance between points Q1 and Q2, here 65 mm).

Next, dimensions X1 and dimensions X2 were measured for each of the above-mentioned vapor deposition masks 20.

First, as shown in FIG. 29, the vapor deposition mask 20 was placed horizontally on the stage 81. At that time, the vapor deposition mask 20 was gently placed on the stage 81 so that the vapor deposition mask 20 did not have a partial dent. Next, the dimension X1 from the P1 point to the Q1 point of the vapor deposition mask 20 was measured, and the dimension X2 from the P2 point to the Q2 point was measured. The measurement results are shown in FIG. 34 as α _X -X1 and α _X -X2. Here, points P1 and Q1 and points P2 and Q2 are set at the center of the through hole 25 such that α _X is 600 mm.

The measured dimensions X1 and X2 were substituted into the above-mentioned equation (1) to calculate the left side of the equation (1). The calculation result is shown in FIG. 34 as | α _X − (X1 + X2) / 2 |. In FIG. 34, the dimensions of the 17 thin-film masks 20 obtained from the 17 samples described above were measured. Of the 1st to 17th samples, the 1st to 7th samples satisfied the formula (1).

Further, the dimensions X1 and X2 of the vapor deposition mask 20 were substituted into the above-mentioned equation (2) to calculate the left side of the equation (2). The calculation result is shown in FIG. 34 as | X1-X2 |. As shown in FIG. 34, among the 1st to 17th samples, the 1st to 3rd samples and the 8th to 13th samples satisfied the formula (2).

Therefore, as shown in the comprehensive determination result in FIG. 34, among the first to 17th samples, the first to third samples satisfy the formulas (1) and (2), and are through holes at the time of stretching. It was determined that the vapor deposition mask 20 was capable of improving the position accuracy of the 25.

Here, the reason why the above-mentioned equations (1) and (2) can be satisfied to improve the position accuracy of the through hole 25 at the time of stretching will be described.

First, the equation (1) will be described. As described above, the formula (1) is for suppressing the occurrence of misalignment of each through hole 25 at the time of stretching due to the deviation of the dimension X1 and the dimension X2 with respect to the design value. .. That is, when the dimensions X1 and X2 satisfy the formula (1), the amount of elongation of the vapor deposition mask 20 in the longitudinal direction D1 at the time of stretching can be kept within a desired range, whereby the vapor deposition at the time of stretching can be achieved. The amount of shrinkage of the mask 20 in the width direction D2 can be kept within a desired range. Therefore, in order to confirm that satisfying the equation (1) contributes to the improvement of the position accuracy of the through hole 25 at the time of stretching, attention is paid to the width dimension Y1 (see FIG. 28) of the vapor deposition mask 20 at the time of stretching. This dimension Y1 corresponds to the width dimension at the center position in the longitudinal direction D1. The amount of shrinkage in the width direction D2 at this central position can be the largest. Although the vapor deposition mask 20 to which tension is not applied is shown in FIG. 28, the dimension Y1 at the time of stretching is shown in FIG. 28 for convenience. The same applies to the dimension Y2 described later.

Next, the equation (2) will be described. As described above, the formula (2) is for suppressing the occurrence of misalignment of each through hole 25 at the time of stretching due to the displacement of the dimension X1 and the dimension X2 from each other. That is, by satisfying the equation (2) in the dimension X1 and the dimension X2, it is possible to suppress the elongation of the longitudinal direction D1 from being different in the width direction D2 at the time of stretching, and to suppress the positional deviation of the through hole 25 in the width direction D2. can. Therefore, in order to confirm that satisfying the formula (2) contributes to improving the position accuracy of the through hole 25 at the time of stretching, the recess depth dimension of the first side edge 27a curved in a C shape of the vapor deposition mask 20. Focus on Y2. This dimension Y2 corresponds to the recess depth dimension at the center position in the longitudinal direction D1. More specifically, from the line segment connecting the intersection PY1 between the first end portion 26a and the first side edge 27a of the vapor deposition mask 20, and the intersection PY2 between the second end portion 26b and the first side edge 27a, the first The distance from the side edge 27a to the center position in the longitudinal direction D1 is defined as the dimension Y2. Such a dimension Y2 indicates the maximum recess depth of the first side edge 27a. As shown in FIG. 32, when the curved shape of the vapor deposition mask 20 at the time of stretching is reversed, the dimension Y2 may be the recessed depth dimension of the second side edge 27b.

The measuring method of the dimension Y1 and the dimension Y2 will be described below.

First, after the measurements of the dimensions X1 and the dimensions X2 were completed, tension was applied to the vapor deposition mask 20. More specifically, first, the first end portion 26a and the second end portion 26b of the vapor deposition mask 20 are held by clamps 86a to 86d as shown in FIG. 30, for example, and the first tension portions 87a to the fourth tension are held. Tension was applied to the vapor deposition mask 20 from the portion 87d. The applied tension was such that each through hole 25 was positioned within an allowable range with respect to a desired position (deposited target position) in the longitudinal direction D1. Subsequently, the tension-applied vapor deposition mask 20 was fixed on the stage 81 shown in FIG. 29. Next, the dimensions Y1 and Y2 of the vapor deposition mask 20 fixed on the stage 81 were measured. The measurement result of the dimension Y1 is shown in FIG. 34 as α _Y − Y1. Here, α _Y is a design value of the width dimension of the vapor deposition mask 20 at the center position in the longitudinal direction D1. In addition, α _Y is a design value at the time of erection. Further, the measurement result of the dimension Y2 is shown in FIG. 34 as Y2.

The measured dimensions Y1 and Y2 were evaluated.

The dimension Y1 was evaluated based on whether α _Y − Y1 was equal to or less than the threshold value (± 4.0 μm). Here, the threshold value is set as a value that allows the luminous efficiency of the pixels formed by the vapor deposition and the positional deviation within a range that can prevent color mixing with pixels of other adjacent colors. When the tension in the longitudinal direction D1 is applied to the vapor deposition mask 20, the width dimension of the vapor deposition mask 20 can be reduced at the center position in the longitudinal direction D1. In this case, at the central position in the longitudinal direction D1, the first side edge 27a and the second side edge 27b are deformed so as to approach each other. Therefore, the allowable values of deformation at the first side edge 27a and the second side edge 27b were considered to be 2 μm, respectively, and the total threshold value was set to ± 4.0 μm. Among the samples shown in FIG. 34, in the first to seventh samples, αY− _Y1 was equal to or less than the threshold value. In the first to seventh samples, since the deviation of the width dimension Y1 of the vapor deposition mask 20 is suppressed, the displacement of the through hole 25 in the width direction D2 at the time of stretching can be suppressed. On the other hand, these 1st to 7th samples satisfy the formula (1) as described above. Therefore, it can be said that satisfying the equation (1) can improve the position accuracy of the through hole 25 at the time of stretching.

In particular, dimension Y1 indicates the width dimension of the vapor deposition mask 20 at the center position in the longitudinal direction D1. This central position is a position where the through hole 25 can be displaced most in the width direction D2. Therefore, when α _Y − Y1 at the central position is equal to or less than the threshold value, it can be said that the positional deviation of the through hole 25 in the width direction D2 at a position other than the central position in the longitudinal direction D1 can be further suppressed. ..

The dimension Y2 was evaluated based on whether or not the dimension Y2 was equal to or less than the threshold value (3.0 μm). Here, the threshold value is set as a value that allows the luminous efficiency of the pixels formed by the vapor deposition and the positional deviation within a range that can prevent color mixing with pixels of other adjacent colors. Among the samples shown in FIG. 34, in the first to third samples and the eighth to thirteenth samples, the dimension Y2 was equal to or less than the threshold value. As a result, in the first to third samples and the eighth to thirteenth samples, the degree of denting of the first side edge 27a of the vapor deposition mask 20 becomes smaller, so that the position of the through hole 25 in the width direction D2 at the time of stretching is reduced. The deviation can be suppressed. On the other hand, these 1st to 3rd samples and 8th to 13th samples satisfy the formula (2) as described above. Therefore, it can be said that satisfying the equation (2) can improve the position accuracy of the through hole 25 at the time of stretching.

In particular, dimension Y2 indicates the depth dimension of the recess of the first side edge 27a of the vapor deposition mask 20 at the central position in the longitudinal direction D1. This central position is a position where the through hole 25 can be displaced most in the width direction D2. Therefore, when the dimension Y2 at the central position is equal to or less than the threshold value, it can be said that the positional deviation of the through hole 25 in the width direction D2 at a position other than the central position in the longitudinal direction D1 can be further suppressed.

Further, as shown in FIG. 34, in the first to third samples and the eighth to thirteenth samples, the absolute value of the slope of the steepness is 6.0% / m or less. From this, it can be seen that the variation between the dimensions X1 and the dimensions X2 can be reduced by manufacturing the vapor deposition mask 20 using the metal plate 64 having an absolute value of steepness inclination of 6.0% / m or less. That is, it is considered that there is a correlation between the absolute value of the steep slope and the dimensions X1 and X2, and by selecting the metal plate 64 by paying attention to the absolute value of the steep slope, the metal plate 64 is selected at the time of stretching. It can be said that the positional accuracy of the through hole 25 can be improved.

10 Thin-film mask device 15 Frame 20 Thin-film mask 21 Metal plate 22 Effective area 23 Peripheral area 25 Through hole 30 First recess 35 Second recess 55 Base material 64 Long metal plate 65a First resist pattern 65b Second resist pattern 65c First Resist film 65d 2nd resist film 73 Cutting device 92 Organic EL substrate 98 Deposited material AL Central axis R1 Central part R2 One end side part R3 Other end side part

Claims (22)

A metal plate having a longitudinal direction used for forming a plurality of through holes to manufacture a mask.
The through hole of the mask is formed by etching the elongated metal plate being conveyed.
In the width direction of the metal plate, the metal plate has a central portion, one end side portion located on one end side in the width direction of the metal plate from the center portion, and the width direction of the metal plate from the center portion. It is divided into the other end side part located on the other end side of the
When the percentage of the height of the wavy shape with respect to the period of the wavy shape of the metal plate in the longitudinal direction is referred to as steepness, the steepness at the first position in the width direction and the steepness at the second position are used. The absolute value of the slope of the steepness obtained by dividing the difference by the distance between the first position and the second position is 6% / m or less in the central portion of the metal plate. .. The metal plate according to claim 1, wherein the mask manufactured from the metal plate is a vapor deposition mask used for vapor deposition in a desired pattern. The metal plate according to claim 1 or 2, wherein the mask is assigned to the central portion. The metal plate according to any one of claims 1 to 3, wherein the central portion occupies at least 60% of the width of the metal plate. The metal plate according to any one of claims 1 to 4, wherein the one end side portion and the other end side portion have the same ratio to the width of the metal plate. The metal plate according to any one of claims 1 to 5, wherein the metal plate is made of an iron alloy containing nickel. A method for manufacturing a metal plate having a longitudinal direction, which is used for forming a plurality of through holes to manufacture a mask.
The through hole of the mask is formed by etching the elongated metal plate being conveyed.
The method for manufacturing the metal plate is as follows.
The rolling process of rolling the base metal to obtain the metal plate,
A cutting step of cutting off one end and the other end in the width direction of the metal plate over a predetermined range is provided.
In the width direction of the metal plate, the metal plate has a central portion, one end side portion located on one end side in the width direction of the metal plate from the center portion, and the width direction of the metal plate from the center portion. It is divided into the other end side part located on the other end side of the
When the percentage of the height of the wavy shape with respect to the period of the wavy shape of the metal plate in the longitudinal direction after the cutting step is referred to as steepness, the steepness at the first position in the width direction and the steepness at the second position are used. A metal in which the absolute value of the slope of the steepness obtained by dividing the difference from the steepness by the distance between the first position and the second position is 6% / m or less in the central portion. How to make a board. The method for producing a metal plate according to claim 7, wherein the mask manufactured from the metal plate is a vapor deposition mask used for vapor deposition in a desired pattern. The method for manufacturing a metal plate according to claim 7 or 8, wherein the mask is assigned to the central portion. The method for manufacturing a metal plate according to any one of claims 7 to 9, wherein the central portion occupies at least 60% of the width of the metal plate after the cutting step. The method for manufacturing a metal plate according to any one of claims 7 to 10, wherein the one end side portion and the other end side portion occupy the same ratio to the width of the metal plate after the cutting step. The range on one end side and the range on the other end side of the metal plate to be cut in the cutting step are determined based on the result of the observation step of the wavy shape of the metal plate performed before the cutting step. , The method for manufacturing a metal plate according to any one of claims 7 to 11. Further provided with an annealing step of annealing the metal plate obtained by the rolling step to remove the internal stress of the metal plate.
The method for manufacturing a metal plate according to any one of claims 7 to 12, wherein the annealing step is carried out while pulling the rolled base metal in the longitudinal direction. The method for producing a metal plate according to any one of claims 7 to 13, wherein the base material is made of an iron alloy containing nickel. It is a method of manufacturing a mask in which a plurality of through holes are formed.
The process of preparing a metal plate with a longitudinal direction and
A resist pattern forming step of forming a resist pattern on the metal plate and
The metal plate is provided with an etching step of etching a region of the metal plate not covered by the resist pattern to form a recess in the metal plate so as to define the through hole.
In the width direction of the metal plate, the metal plate has a central portion, one end side portion located on one end side in the width direction of the metal plate from the center portion, and the width direction of the metal plate from the center portion. It is divided into the other end side part located on the other end side of the
When the percentage of the height of the wavy shape with respect to the period of the wavy shape of the metal plate in the longitudinal direction is referred to as steepness, the steepness at the first position in the width direction and the steepness at the second position A method for manufacturing a mask, wherein the absolute value of the slope of the steepness obtained by dividing the difference by the distance between the first position and the second position is 6% / m or less in the central portion. The mask is a vapor deposition mask used for vapor deposition in a desired pattern.
The vapor deposition mask comprises an effective region in which a plurality of through holes are formed and a peripheral region located around the effective region.
The etching step etches a region of the metal plate that is not covered by the resist pattern, and a recess that defines a through hole in the region of the metal plate that forms the effective region. The method for manufacturing a mask according to claim 15, wherein the mask is formed. The resist pattern forming step is
The step of forming a resist film on the metal plate and
The step of vacuum-adhering the exposure mask to the resist film and
The method for manufacturing a mask according to claim 15, which comprises a step of exposing the resist film with a predetermined pattern through the exposure mask. The method for manufacturing a mask according to any one of claims 15 to 17, wherein the mask is assigned to the central portion. The method for manufacturing a mask according to any one of claims 15 to 18, wherein the central portion occupies at least 60% of the width of the metal plate. The method for manufacturing a mask according to any one of claims 15 to 19, wherein the one end side portion and the other end side portion occupy the same ratio with respect to the width of the metal plate. The method for manufacturing a mask according to any one of claims 15 to 20, wherein the metal plate is made of an iron alloy containing nickel. The step of preparing the mask by the method for manufacturing a mask according to any one of claims 15 to 21 and the process of preparing the mask.
A method for manufacturing a mask device, comprising a step of applying tension to the mask in the longitudinal direction to stretch the mask on a frame.

Images