JP2022077425A - Manufacturing method of semiconductor method - Google Patents

Abstract

To provide a manufacturing method of a semiconductor device, capable of unevenly distributing a filler of a sealing resin to the circumference of a semiconductor chip.SOLUTION: A semiconductor chip 4 is coated by implanting a sealing resin 9 having a filler 10 and a thermoset resin 11 into an inner part of a case 6 surrounding the semiconductor chip 4. The sealing resin 9 is hardened. During the implantation of the sealing resin 9, a vibration of 50 Hz to 500 Hz of a frequency is applied to the sealing resin 9 after the implantation and before the hardening, or during the hardening to sink the filler 10 so that a density of the filler 10 in the circumference of the semiconductor chip 4 becomes larger than the circumference of an upper surface of the sealing resin 9.SELECTED DRAWING: Figure 2

Description

The present disclosure relates to a method for manufacturing a semiconductor device for encapsulating a semiconductor chip with a sealing resin containing a filler.

A semiconductor device in which a filler of a sealing resin is unevenly distributed around a semiconductor chip by applying vibration has been proposed (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 01-002340

However, it has not been clarified under what conditions the filler of the sealing resin can be unevenly distributed around the semiconductor chip.

The present disclosure has been made to solve the above-mentioned problems, and an object thereof is to obtain a method for manufacturing a semiconductor device capable of unevenly distributing a filler of a sealing resin around a semiconductor chip.

The method for manufacturing a semiconductor device according to the present disclosure includes a step of injecting a sealing resin having a filler made of an insulator and a thermosetting resin into a case surrounding the semiconductor chip to cover the semiconductor chip, and the sealing. The step of curing the stop resin and the filler around the semiconductor chip by applying vibration having a frequency of 50 Hz to 500 Hz to the sealing resin during injection, injection and before curing, or during curing of the sealing resin. It is characterized by comprising a step of precipitating the filler so that the density of the sealing resin becomes larger than that around the upper surface of the sealing resin.

In the present disclosure, vibration having a frequency of 50 Hz to 500 Hz is applied to the sealing resin. As a result, the filler can be unevenly distributed around the semiconductor chip.

It is sectional drawing which shows the semiconductor device which concerns on Embodiment 1. FIG. It is an enlarged cross-sectional view of the part surrounded by the broken line of FIG. It is a flowchart of the manufacturing method of the semiconductor device which concerns on Embodiment 1. FIG. It is a schematic diagram which shows the application method of vibration. It is sectional drawing which shows the modification of the semiconductor device which concerns on Embodiment 1. FIG. It is sectional drawing which shows the semiconductor device which concerns on Embodiment 2. FIG. It is sectional drawing which shows the modification of the semiconductor device which concerns on Embodiment 2. FIG. It is a block diagram which shows the structure of the power conversion system to which the power conversion apparatus which concerns on Embodiment 3 is applied.

A method of manufacturing a semiconductor device according to an embodiment will be described with reference to the drawings. The same or corresponding components may be designated by the same reference numerals and the description may be omitted.

Embodiment 1.
FIG. 1 is a cross-sectional view showing a semiconductor device according to the first embodiment. The insulating substrate 1 has a ceramic plate 2, a metal pattern 3a for heat dissipation provided on the lower surface thereof, and a metal pattern 3b provided on the upper surface thereof. A plurality of semiconductor chips 4 are bonded to the metal pattern 3b of one insulating substrate 1 via a bonding material 5, and are electrically connected to each other. The routing of the metal pattern 3b creates a flow path for electricity inside the semiconductor device. The heat generated during the operation of the semiconductor chip 4 is dissipated through the metal pattern 3b, the ceramic plate 2 and the metal pattern 3a of the insulating substrate 1. The metal pattern 3a is electrically insulated from other configurations by the ceramic plate 2 of the insulating substrate 1.

The semiconductor chip 4 is an element that controls power, and is, for example, an IGBT (Insulated Gate Bipolar Transistor), a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), and a diode (diode). The length of one side of the semiconductor chip 4 is about 3 mm to 20 mm.

The case 6 is adhered to the insulating substrate 1 via an adhesive (not shown) so as to surround the semiconductor chip 4. The insulating substrate 1 and the case 6 are electrically insulated. The metal wire 7 is wire-bonded to the semiconductor chip 4, the metal terminal 8 provided on the case 6, and the metal pattern 3b of the insulating substrate 1 by ultrasonic bonding, and electrically connected to each other.

The metal wire 7 is made of pure Al or a metal material containing Al as a main component. The diameter of the metal wire 7 is 100 μm to 500 μm, and is used properly according to the current capacity flowing through the metal wire 7. A Cu wire containing Cu as a main component having a small electric resistance may be used.

The sealing resin 9 is filled inside the case 6 and covers and seals the semiconductor chip 4 and the metal wire 7 surrounded by the case 6. The upper end of the metal terminal 8 is exposed to the outside of the case 6 and is electrically connected to a control board (not shown) having a control circuit.

FIG. 2 is an enlarged cross-sectional view of the portion surrounded by the broken line in FIG. The sealing resin 9 has a filler 10 made of an insulator and a thermosetting resin 11 as main components. The particle size of the filler 10 is about 20 to 200 μm. The material of the filler 10 is silica (SiO ₂ ), alumina (Al ₂ O ₃ ), silicon carbide (SiC), boron nitride (BN) and the like. The thermosetting resin 11 is, for example, an epoxy resin. By adjusting the type and density of the filler 10, the linear expansion coefficient of the sealing resin 9 which is a mixture of the thermosetting resin 11 and the filler 10 is adjusted. As the density of the filler 10 decreases, the coefficient of linear expansion of the sealing resin 9 approaches the value of the thermosetting resin 11.

The coefficient of linear expansion of the epoxy resin after thermosetting is about 60 (× 10 ^-6 / K). The coefficient of linear expansion of the filler 10 is generally about 0.5 to 10 (× 10 ^-6 / K). Specifically, the coefficient of linear expansion of silica (SiO ₂ ) is 0.51 to 0.58 (× ^10-6 / K). The coefficient of linear expansion of alumina (Al ₂ O ₃ ) is 7.8 to 8.0 (× 10 ^-6 / K). The coefficient of linear expansion of silicon carbide (SiC) is 4.4 (× ^10-6 / K). The coefficient of linear expansion of boron nitride (BN) is about 0.8 (× 10 ^-6 / K), which is 1/10 of that of alumina.

The coefficient of linear expansion of Si, which is the base material of the semiconductor chip 4, is 2.4 (× 10 ^-6 / K), and the coefficient of linear expansion of the semiconductor chip 4 that generates heat is generally 2 to 5 (× 10 ^-6 / K). K) Before and after. In order to bring the coefficient of linear expansion of the sealing resin 9 closer to that of the semiconductor chip 4, a filler 10 made of silica, boron nitride, alumina or the like having a coefficient of linear expansion of about 0.5 to 8.0 (× ^10-6 / K) is used. It is necessary to add an appropriate amount to the thermosetting resin 11 to lower the coefficient of linear expansion due to the mechanical properties of the filler 10 and the flow characteristics between the thermosetting resin 11 and the filler 10. The semiconductor device is made up of various combinations of different materials. It is necessary to adjust the characteristics such as the composition, composition, and coefficient of linear expansion of the sealing resin 9 in consideration of the size of these different materials, the magnitude of the current and voltage of the semiconductor device, the application, the magnitude of the package, the operating temperature, and the like. be.

In the present embodiment, the filler 10 is settled to the bottom of the case 6 near the semiconductor chip 4, the metal wire 7, and the metal pattern 3b. Therefore, the density of the filler 10 around the semiconductor chip 4 is higher than that around the upper surface of the sealing resin 9. That is, the filler 10 is unevenly distributed around the semiconductor chip 4. Since the density of the filler 10 is low around the upper surface of the sealing resin 9 exposed to the outside, the stress can be relaxed.

On the other hand, the periphery of the semiconductor chip 4, which is the heat generating portion of the semiconductor device, is sealed with the sealing resin 9 having a high density of the filler 10. Therefore, the coefficient of linear expansion of the sealing resin 9 around the semiconductor chip 4 can be lowered to approach the coefficient of linear expansion of the semiconductor chip 4. As a result, peeling of the sealing resin 9 due to the difference in linear expansion coefficient between the semiconductor chip 4 that repeatedly raises and lowers the temperature and the sealing resin 9 around it, cracks between the semiconductor chip 4 and the metal wiring, and peeling occur. The risk of defects such as progress is reduced. This becomes remarkable as the current capacity of the semiconductor device increases. As a result, it can be expected that the heat cycle life and the power cycle life specified by JEITA as reliability test items will be extended. In addition, since a design margin is created for the difference in the coefficient of linear expansion, the operating temperature of the semiconductor chip can be raised, and a large current capacity of the semiconductor device can be expected.

Further, when the encapsulating resin having a low linear expansion coefficient is individually laminated around the semiconductor chip 4 and the encapsulating resin having a high linear expansion coefficient is individually laminated around the upper surface of the encapsulating resin 9, the volume integral of the encapsulating resin inevitably becomes large. It ends up. Even if the thickness to be laminated is very small, the volume of the semiconductor device becomes larger by laminating two or more sealing resins than when one encapsulating resin is used. On the other hand, in the present embodiment, the filler 10 is unevenly distributed around the semiconductor chip 4 by using a single sealing resin 9. As a result, it is not necessary to individually laminate a plurality of sealing resins having the desired characteristics around the semiconductor chip 4 and around the upper surface of the sealing resin 9. Therefore, the size of the semiconductor device can be reduced.

Subsequently, a method for manufacturing a semiconductor device according to the present embodiment will be described. FIG. 3 is a flowchart of a method for manufacturing a semiconductor device according to the first embodiment. First, as a pre-process, the semiconductor chip 4 is mounted on the metal pattern 3b of the insulating substrate 1. The case 6 is adhered to the insulating substrate 1 so as to surround the semiconductor chip 4. The semiconductor chip 4, the metal terminal 8 provided on the case 6, and the metal pattern 3b of the insulating substrate 1 are electrically connected to each other by the metal wire 7 (step S1).

Next, the sealing resin 9 is injected into the case 6 to cover the semiconductor chip 4, the metal wire 7, and the upper surface of the insulating substrate 1 (step S2). The thermosetting resin 11 is, for example, an epoxy resin. The specific gravity of the epoxy resin is 1.2 g / cm ³ . When the filler 10 is boron nitride, its specific gravity is about 2.6 g / cm ³ . Therefore, the filler 10 is heavier than the epoxy resin. However, since the viscosity of the epoxy resin is high and the grain shape of the filler 10 is small, if the filler 10 is left to stand naturally without applying vibration, the thermosetting resin 11 will be cured before the filler 10 settles to the bottom.

Therefore, vibration is applied to the sealing resin 9 from the outside (step S3). The vibration given from the outside reaches the sealing resin 9 sealed inside through the insulating substrate 1 or the case 6. The frequency of vibration to be applied is 50 Hz to 500 Hz, and does not depend on the natural frequency of the filler 10. The application time of vibration may be 1 second to 60 seconds, for example, 5 to 15 seconds.

FIG. 4 is a schematic diagram showing a method of applying vibration. The semiconductor device 13 is placed on the XY plane of the mounting table 12 with the insulating substrate 1 facing down. The mounting table 12 is a shaking table capable of outputting vibrations having a frequency of 50 Hz to 500 Hz, or a stage connected to the shaking table. The semiconductor device 13 is fixed to the mounting table 12 by screwing or using a jig, and vibration is applied. The direction of vibration is any one or two or more in the X direction, the Y direction, and the Z direction. The frequency of vibration may be constant or may be changed in the middle. As the shaking table, a commercially available test device can be used.

Due to the vibration, the filler 10 which is heavier than the thermosetting resin 11 settles to the bottom of the case 6. As a result, the filler 10 can be unevenly distributed so that the density of the filler 10 around the semiconductor chip 4 is higher than that around the upper surface of the sealing resin 9.

Next, the sealing resin 9 is cured and cured (step S4). Then, the process proceeds to the next step (S5). The vibration is applied to the sealing resin 9 not only during the injection of the sealing resin 9, but also after the injection and before the curing, or during the curing.

As described above, in the present embodiment, vibration having a frequency of 50 Hz to 500 Hz is applied to the sealing resin 9. As a result, the filler 10 can be unevenly distributed around the semiconductor chip 4 so that the density of the filler 10 around the semiconductor chip 4 is higher than that around the upper surface of the sealing resin 9.

Here, the reason why the frequency of the vibration applied to the sealing resin 9 is set to 50 Hz to 500 Hz will be described by taking as an example the liquefaction phenomenon due to the earthquake and the vibrator at the time of placing concrete.

In an earthquake, vibration with a frequency of about 0.2 Hz to 2 Hz is applied to land composed of a solvent such as fresh water or seawater and a solute such as sand, stone, and gravel. The solutes were kept at an appropriate distance through the solvent, but the contact points of the solutes were displaced and became dense due to the application of vibration. On the other hand, the solvent held between the solutes is extruded, and when it comes out to the surface, it becomes liquefied.

Further, the vibrator at the time of placing concrete gives vibration of a frequency of 50 Hz to 250 Hz to concrete composed of a solvent such as fresh water and a solute such as lime powder or gravel. This increases the filling degree of the concrete and eliminates air bubbles and unfilled portions inside the concrete.

The frequency of vibration applied to the sealing resin 9 was determined by comprehensively considering the frequency of the vibration of the earthquake and the vibrator, the action of making the solutes denser, the size of the solute, the characteristics of the solvent, and the like. First, in the case of liquefaction caused by an earthquake, the volume exceeds several tens of cubic meters like land, and the solute and solvent each have dimensions in millimeters, do not have special properties such as viscosity, and have a specific gravity. Must be stable. The frequency of vibration applied to the sealing resin 9 needs to be higher than that of an earthquake. Next, since the size of the filler 10 as a solute is similar to the size of lime powder and the epoxy resin as a solvent has a larger viscosity than that of water, the frequency of vibration at the time of placing concrete is at least required. Therefore, the lower limit of the vibration frequency applied to the sealing resin 9 is set to 50 Hz.

On the other hand, if the frequency of vibration is raised too much, a phenomenon called cavitation that generates bubbles may occur. The upper limit of the vibration frequency during concrete placement is 250 Hz. And while the solvent of concrete is water, the sealing resin 9 is an epoxy resin having a high viscosity. Therefore, it is better to give the sealing resin 9 a higher frequency than that of concrete. Therefore, the upper limit of the vibration frequency applied to the sealing resin 9 is set to 500 Hz, which is twice 250 Hz.

Further, when the propagation time of the vibration from the start of operation of the vibration device to the sealing resin 9 is taken into consideration, it is necessary to set the application time of the vibration to 1 second or more. On the other hand, in order to prevent disconnection or deformation of the metal wire 7 due to productivity and vibration, it is necessary to apply vibration for 60 seconds or less.

FIG. 5 is a cross-sectional view showing a modified example of the semiconductor device according to the first embodiment. In this modification, a metal flat plate 14 is used instead of the metal wire 7 to electrically connect the metal terminal 8 provided on the case 6 and the metal pattern 3b of the insulating substrate 1. The metal flat plate 14 has a larger cross-sectional area than the metal wire 7. Therefore, even when a plurality of metal wires 7 must be used to pass a certain amount of current, only one metal wire 14 is required in the case of the metal flat plate 14, so that the design can be simplified. Further, since the metal flat plate 14 having a large cross section has a small electric resistance, it is possible to reduce the calorific value and increase the current density. In addition, since the processing man-hours are reduced, the productivity is improved. Although not shown, the metal flat plate 14 may be used for the connection between the metal patterns 3b of the insulating substrate 1, the connection between the semiconductor chips 4, or the connection between the metal pattern 3b of the insulating substrate 1 and the semiconductor chip 4.

The viscosity and hardness of the thermosetting resin 11 change depending on the degree of heat input and the time after injection. Further, the amount of the sealing resin 9 required is determined by the size of the semiconductor device. Therefore, it is necessary to set the frequency and application time of the vibration applied to the sealing resin 9 in consideration of these parameters.

Further, by applying vibration having a frequency of 50 to 500 Hz for 1 to 60 seconds, the sealing resin 9 can be wrapped around the resin unfilled region in the case 6 of the semiconductor device. Therefore, even when a silicone gel or an elastomer is used instead of the epoxy resin, the withstand voltage performance such as partial discharge failure of the semiconductor device can be improved. However, the silicone gel and the elastomer are colorless and transparent, the content of the filler 10 is small, and the absolute amount of the filler 10 to be unevenly distributed around the semiconductor chip 4 is insufficient.

Embodiment 2.
FIG. 6 is a cross-sectional view showing the semiconductor device according to the second embodiment. In the present embodiment, the insulating substrate 1 is joined to the base plate 15 via the joining material 16. By providing the base plate 15 under the insulating substrate 1 in this way, the heat dissipation performance and reliability of the semiconductor device can be improved. The number of the insulating substrates 1 to be bonded to the base plate 15 is not limited to one, and may be a plurality of. Other configurations, manufacturing methods, and effects are the same as those in the first embodiment.

FIG. 7 is a cross-sectional view showing a modified example of the semiconductor device according to the second embodiment. In this modification, a metal flat plate 14 is used instead of the metal wire 7 to electrically connect the metal terminal 8 provided on the case 6 and the metal pattern 3b of the insulating substrate 1. Thereby, the same effect as the modification shown in FIG. 5 can be obtained.

The semiconductor chip 4 is not limited to the one formed of silicon, and may be formed of a wide bandgap semiconductor having a larger bandgap than silicon. The wide bandgap semiconductor is, for example, silicon carbide, gallium nitride based material, or diamond. The semiconductor chip 4 formed of such a wide bandgap semiconductor has high withstand voltage resistance and allowable current density, and thus can be miniaturized. By using the miniaturized semiconductor chip 4, the semiconductor device incorporating the semiconductor chip 4 can also be miniaturized and highly integrated. Further, since the heat resistance of the semiconductor chip 4 is high, the heat radiation fins of the heat sink can be miniaturized, and the water-cooled portion can be air-cooled, so that the semiconductor device can be further miniaturized. Further, since the power loss of the semiconductor chip 4 is low and the efficiency is high, the efficiency of the semiconductor device can be improved.

Embodiment 3.
In this embodiment, the semiconductor device according to the above-described first or second embodiment is applied to a power conversion device. The power conversion device is, for example, an inverter device, a converter device, a servo amplifier, a power supply unit, or the like. Although the present disclosure is not limited to a specific power conversion device, the case where the present disclosure is applied to a three-phase inverter will be described below.

FIG. 8 is a block diagram showing a configuration of a power conversion system to which the power conversion device according to the third embodiment is applied. This power conversion system includes a power supply 100, a power conversion device 200, and a load 300. The power supply 100 is a DC power supply, and supplies DC power to the power conversion device 200. The power supply 100 can be configured with various things, for example, it can be configured with a DC system, a solar cell, a storage battery, and may be configured with a rectifier circuit or an AC / DC converter connected to an AC system. .. Further, the power supply 100 may be configured by a DC / DC converter that converts the DC power output from the DC system into a predetermined power.

The power conversion device 200 is a three-phase inverter connected between the power supply 100 and the load 300, converts the DC power supplied from the power supply 100 into AC power, and supplies AC power to the load 300. The power conversion device 200 includes a main conversion circuit 201 that converts DC power into AC power and outputs it, and a control circuit 203 that outputs a control signal for controlling the main conversion circuit 201 to the main conversion circuit 201.

The load 300 is a three-phase electric motor driven by AC power supplied from the power converter 200. The load 300 is not limited to a specific application, and is an electric motor mounted on various electric devices. For example, the load 300 is used as an electric motor for a hybrid vehicle, an electric vehicle, a railway vehicle, an elevator, or an air conditioner.

Hereinafter, the power conversion device 200 will be described in detail. The main conversion circuit 201 includes a switching element and a freewheeling diode (not shown), and by switching the switching element, the DC power supplied from the power supply 100 is converted into AC power and supplied to the load 300. There are various specific circuit configurations of the main conversion circuit 201, but the main conversion circuit 201 according to the present embodiment is a two-level three-phase full bridge circuit, and has six switching elements and each switching element. It can consist of six anti-parallel freewheeling diodes. Each switching element and each freewheeling diode of the main conversion circuit 201 are configured by a semiconductor device 202 corresponding to any one of the above-described embodiments 1 to 4. The six switching elements are connected in series for each of the two switching elements to form an upper and lower arm, and each upper and lower arm constitutes each phase (U phase, V phase, W phase) of the full bridge circuit. Then, the output terminals of each upper and lower arm, that is, the three output terminals of the main conversion circuit 201 are connected to the load 300.

Further, although the main conversion circuit 201 includes a drive circuit (not shown) for driving each switching element, the drive circuit may be built in the semiconductor device 202, or the drive circuit may be provided separately from the semiconductor device 202. It may be configured to be provided. The drive circuit generates a drive signal for driving the switching element of the main conversion circuit 201 and supplies it to the control electrode of the switching element of the main conversion circuit 201. Specifically, according to the control signal from the control circuit 203 described later, a drive signal for turning on the switching element and a drive signal for turning off the switching element are output to the control electrode of each switching element. When the switching element is kept on, the drive signal is a voltage signal (on signal) equal to or higher than the threshold voltage of the switching element, and when the switching element is kept off, the drive signal is a voltage equal to or lower than the threshold voltage of the switching element. It becomes a signal (off signal).

The control circuit 203 controls the switching element of the main conversion circuit 201 so that the desired power is supplied to the load 300. Specifically, the time (on time) in which each switching element of the main conversion circuit 201 should be in the on state is calculated based on the electric power to be supplied to the load 300. For example, the main conversion circuit 201 can be controlled by PWM control that modulates the on-time of the switching element according to the voltage to be output. Then, a control command (control signal) is output to the drive circuit provided in the main conversion circuit 201 so that an on signal is output to the switching element that should be turned on at each time point and an off signal is output to the switching element that should be turned off. Is output. The drive circuit outputs an on signal or an off signal as a drive signal to the control electrode of each switching element according to this control signal.

In the power conversion device according to the present embodiment, since the semiconductor device according to the first or second embodiment is applied as the semiconductor device 202, the heat cycle life, the power cycle life is extended, the current capacity is increased, and the semiconductor device is used. It is possible to reduce the size.

In the present embodiment, an example of applying the present disclosure to a two-level three-phase inverter has been described, but the present disclosure is not limited to this, and can be applied to various power conversion devices. In the present embodiment, the two-level power conversion device is used, but a three-level or multi-level power conversion device may be used, and when power is supplied to a single-phase load, the present disclosure is disclosed to the single-phase inverter. You may apply it. Further, when supplying electric power to a DC load or the like, the present disclosure can be applied to a DC / DC converter or an AC / DC converter.

Further, the power conversion device to which the present disclosure is applied is not limited to the case where the above-mentioned load is an electric motor, and is, for example, a power source for a discharge machine, a laser machine, an induction heating cooker, or a non-contact power supply system. It can be used as a device, and can also be used as a power conditioner for a photovoltaic power generation system, a power storage system, or the like.

3 metal pattern, 6 case, 4 semiconductor chip, 7 metal wire, 8 metal terminal, 9 encapsulating resin, 10 filler, 11 thermosetting resin, 14 metal flat plate, 15 base plate, 200 power converter, 201 main conversion circuit , 202 semiconductor device, 203 control circuit

Claims (7)

A process of injecting a sealing resin having a filler made of an insulator and a thermosetting resin into a case surrounding the semiconductor chip to cover the semiconductor chip.
The process of curing the sealing resin and
During injection, injection and before curing, or during curing of the encapsulating resin, vibration having a frequency of 50 Hz to 500 Hz is applied to the encapsulating resin, and the density of the filler around the semiconductor chip is the same as that of the encapsulating resin. A method for manufacturing a semiconductor device, which comprises a step of precipitating the filler so as to be larger than the periphery of the upper surface. The method for manufacturing a semiconductor device according to claim 1, wherein the application time of the vibration is 1 second to 60 seconds. Further provided with a step of joining the semiconductor chip to the metal pattern of the insulating substrate,
The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the upper surface of the insulating substrate is covered with the sealing resin. The process of joining the insulating substrate to the base plate and
The method for manufacturing a semiconductor device according to claim 3, further comprising a step of adhering the case to the base plate. The third or fourth aspect of claim 3 or 4, wherein a metal wire is connected to at least one of the semiconductor chip, the metal terminal of the case, and the metal pattern of the insulating substrate, and the metal wire is covered with the sealing resin. Manufacturing method of semiconductor equipment. The third or fourth aspect of claim 3 or 4, wherein a metal flat plate is connected to at least one of the semiconductor chip, the metal terminal of the case, and the metal pattern of the insulating substrate, and the metal flat plate is covered with the sealing resin. Manufacturing method of semiconductor devices. The method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the semiconductor chip is formed of a wide bandgap semiconductor.

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