JP2022056899A - Film deposition apparatus - Google Patents

Abstract

To provide a film deposition apparatus suppressing a contamination of a detection window of a monitoring part.SOLUTION: A film deposition apparatus according to an embodiment includes a monitoring part for monitoring a film thickness on a work 10, the monitoring part including a detection window 65. The detection window 65 transmits a light for detecting a film thickness. The monitoring part projects a light on the work 10 through the detection window 65, and detects the film thickness based on the light projected on the work 10 and a film. The monitoring part has further a plate-shaped part 68. While the plate-shaped part 68 faces a mounting surface 311 on which the work 10 is arranged on a turntable 31 is arranged, it extends along an extension of the turntable 31.SELECTED DRAWING: Figure 6

Description

The present invention relates to a film forming apparatus.

In the manufacturing process of various products such as semiconductors, displays and optical disks, a film forming process may be applied on a work such as a wafer or a glass substrate. An AR coating (Anti-Reflection coating) for suppressing surface reflection is formed on parts such as smartphones, TVs, HUDs (Head Up Display), and projectors. Band pass filters used for spectroscopic analysis and optical communication to transmit only arbitrary light, cold mirrors used for reflectors for lasers, UV lamps, in-vehicle sensors, etc. Is formed by the film forming process.

There are various types of film forming equipment for film forming processing, and one of them is a film forming apparatus using plasma. In the film forming apparatus using plasma, a target made of a film material source is placed in the film forming chamber, an inert gas is introduced into the film forming chamber, and a DC voltage is applied. When the ions of the plasma-ized inert gas collide with the target, the material constituting the target is knocked out as atomic, molecular or cluster-like particles (hereinafter, also referred to as spatter particles). The sputtered particles are deposited on the work facing the target in the film forming chamber. There is also a film forming apparatus having a film processing chamber in addition to the film forming chamber and chemically reacting the film formed in the film forming chamber by oxidation or nitriding.

A predetermined film thickness is required for the film on the work to fully fulfill the required function. As a method of achieving the target film thickness, a method of repeatedly forming a thin film on the work to achieve the target film thickness as a whole is known. The film forming apparatus for laminating thin films has a rotary table that can be circulated in the film forming chamber. The work is installed on the rotary table, and the rotary table rotates, so that the work passes through the film forming chamber a plurality of times, and the films are stacked each time. When the work has a film processing chamber, the work passes through the film forming chamber and the film processing chamber a plurality of times, and the film forming and the film processing are repeated each time.

Conventionally, the film formation time until the target film thickness is reached is obtained in advance by simulation, calculation, actual measurement, or the like, and the film formation is stopped when the film formation time is reached. However, there is a possibility that there will be a difference between the target film thickness and the film thickness of the film actually formed. Therefore, a method of forming a film while detecting the actual film thickness has also been proposed (see, for example, Patent Document 1 and Patent Document 2). The proposed film forming apparatus is provided with a monitoring unit for monitoring the film thickness. The monitoring unit has a detection window at a position facing the work, and irradiates the work and the film with light through the detection window. Then, the monitoring unit detects the transmitted light of the work and the film, and measures the film thickness based on the spectral transmittance. Alternatively, the monitoring unit receives the reflected light from the work and the film through the detection window, and measures the film thickness by analyzing the reflected light.

Japanese Patent No. 3744003 Japanese Unexamined Patent Publication No. 04-92444

Generally, the film forming chamber is surrounded by a partition wall. Therefore, it is difficult for the spatter particles knocked out from the target to flow out of the film forming chamber. On the other hand, a gap through which the work can pass is opened between the work installation surface of the rotary table and the end of the partition wall so that the work can pass through the film forming chamber by the rotary table. Therefore, it is not possible to completely prevent the sputtered particles from leaking from the film forming chamber, and the sputtered particles reach the detection window of the monitoring unit installed outside the film forming chamber, and the sputtered particles adhere to the detection window of the monitoring unit. There is a risk of doing so.

If the detection window becomes dirty due to the adhesion of spatter particles, the planned amount of light cannot be emitted toward the work, and the transmitted light or reflected light from the work cannot be obtained with a sufficient amount of light. Moreover, the monitoring unit analyzes the light including the information on the deposits on the detection window. Therefore, there is a possibility that an error may occur in the film thickness measurement result, or in the worst case, the film thickness may not be detected, which may hinder the film thickness detection.

It is necessary to clean the detection window regularly so as not to interfere with the film thickness detection, but if the cleaning frequency increases, the film forming apparatus must be stopped frequently, and the production efficiency of the film forming apparatus increases. It will drop.

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a film forming apparatus for suppressing stains on a detection window and improving detection accuracy and productivity. ..

The film forming apparatus of the present invention has a rotary table in which a work is installed on an installation surface and rotates, and a transport unit for circulating and transporting the work along a circumferential transport path by rotating the rotary table, and the transport unit. A film forming chamber that faces the path and forms a film on the work, a target that is arranged in the film forming chamber and is a material source of the film, and a spatter gas introduced between the target and the rotary table. It has a plasma generator for converting the film into plasma, and includes a film forming portion for forming a film on the work by sputtering the target with plasma, and a monitoring unit for monitoring the thickness of the film on the work. The monitoring unit is arranged outside the film formation chamber facing the transport path, and the light is applied to a detection window through which light for film thickness detection is transmitted and a work on which the film is formed through the detection window. A light projecting unit that irradiates the film, an analysis unit that detects the thickness of the film based on the light applied to the work and the film, and an arrangement outside the film forming chamber between the film forming chamber and the detection window. It is characterized by having a plate-shaped portion extending along the installation surface while facing the installation surface of the rotary table.

According to the embodiment of the present invention, there is provided a film forming apparatus capable of suppressing dirt on the detection window and improving detection accuracy and productivity.

It is a perspective plan view schematically showing the structure of the film forming apparatus of embodiment. It is a flowchart which shows the operation of a film forming apparatus. FIG. 1A is a cross-sectional view taken along the line AA of FIG. 1, showing the inside of a film forming chamber and a film processing chamber. It is a block diagram which shows the structure of the monitoring part provided in the film forming apparatus. FIG. 1 is a cross-sectional view taken along the line BB of FIG. 1 and shows an installation mode of a monitoring unit. It is an enlarged view of the monitoring section. It is a schematic diagram which shows the flying particle which tries to pass between a plate-shaped part and a rotary table. It is an enlarged view near the detection window. It is a schematic diagram which shows the flying particle which reached the vicinity of a detection window.

An embodiment of the film forming apparatus according to the present invention will be described in detail with reference to the drawings.

(Whole device)
FIG. 1 is a perspective plan view schematically showing the configuration of the film forming apparatus 100 of the present embodiment. The film forming apparatus 100 is an apparatus for forming a film on the work 10. The work 10 is not limited to this, but is, for example, a glass substrate or a resin substrate. The film formed on the work 10 by the film forming apparatus 100 is a compound film such as an oxide or a nitride. The film forming apparatus 100 includes a chamber 20, a transporting portion 30, a film forming chamber 4, a film processing chamber 5, a monitoring section 6, a load lock portion 70, and a control device 80.

The chamber 20 is a cylindrical container whose inside can be evacuated. The transport unit 30 has a rotary table 31 concentric with the chamber 20 in the chamber 20. The work 10 carried in from the load lock portion 70 is installed on the rotary table 31. The rotary table 31 circulates and conveys the work 10. The work 10 moves along the transport path L, which is a circumferential locus, by the rotary table 31.

The inside of the chamber 20 is divided into a plurality of sections. A film forming chamber 4, a film processing chamber 5, and a monitoring compartment 6 are assigned in this order to each compartment in the chamber 20 along the circumferential direction of the chamber 20, and face the transport path L of the work 10. .. A plurality of film forming chambers 4 may be continuously arranged. The film forming chamber 4 is a section partitioned by a partition wall 22, and the film processing chamber 5 is a section partitioned by a tubular body 51. The monitoring section 6 is a section partitioned by a partition wall 22 located most upstream in the transport direction and a side wall of a tubular body 51 located downstream in the transport direction. In other words, the monitoring section 6 is a section between the film forming chamber 4 located upstream in the transport direction and the film processing chamber 5, and is a section located downstream of the film treatment chamber 5 in the transport direction. The work 10 repeatedly circulates the film forming chamber 4, the film processing chamber 5, and the monitoring section 6 by the transport unit 30.

The film forming chamber 4 is a section in which the film forming portion 40 is arranged, and forms a film on the work 10. The film forming section 40 ejects sputtered particles from the target 42 composed of the material source of the film by plasma and deposits them on the work 10 to form a film. The film processing chamber 5 is a section in which the film processing section 50 is arranged, and the film formed on the work 10 that has passed through the film forming chamber 4 is treated by the transport section 30. The membrane treatment unit 50 generates a plasma in a process gas and chemically reacts the ions in the plasma with the membrane to generate a compound membrane.

Two film forming chambers 4 are continuously arranged, for example, in the transport direction. The materials of the target 42 arranged in the two film forming chambers 4 may be different. As a result, two different types of films can be laminated on the work 10. As the film forming chamber 4, only one chamber may be arranged, or a plurality of three or more chambers may be continuously arranged. Further, in addition to arranging targets 42 made of different materials in each of the plurality of film forming chambers 4, targets 42 made of the same type of material can be arranged.

In the monitoring section 6, the thickness of the compound film formed on the work 10 is optically measured. Various known film thickness detection methods can be applied as long as they are optical measurement methods. For example, for the film thickness, light is applied to the work 10 and the reflected light from the work 10 is applied to, for example, the peak valley method (PV method). Detect based on. In the monitoring section 6, a detection window 65 is installed facing the rotary table 31 (see FIG. 3). The detection window 65 is a translucent member such as quartz or sapphire. The work 10 passing directly under the detection window 65 is irradiated with light through the detection window 65, and the reflected light from the work 10 is acquired through the detection window 65. That is, the detection window 65 secures the exchange of light in both spaces while separating the space in which the work 10 exists and the space in which various optical components are arranged.

The control device 80 is a processing device including a PLC (Programmable Logic Controller) and a CPU (Central Processing Unit), and stores a program describing control contents. The control device 80 controls each component of the film forming apparatus 100, and rotates with the film forming section 40 and the film processing section 50 until the film thickness on the work 10 detected in the monitoring section 6 reaches the target film thickness. The table 31 is operated.

FIG. 2 is a flowchart showing the overall operation of the film forming apparatus 100 controlled by the control apparatus 80. The work 10 is carried into the chamber 20 from the load lock portion 70 (step S01). The inside of the chamber 20 is depressurized to a predetermined pressure (step S02). After decompression in the chamber 20, the control device 80 rotates the rotary table 31 on which the work 10 is installed (step S03).

When the film forming apparatus 100 includes two film forming chambers 4, the control device 80 operates the film forming section 40 of one film forming chamber 4 and stops the film forming section 40 of the other film forming chamber 4. (Step S04). In the film forming chamber 4 in operation, a film is formed on the work 10 (step S05). For example, a silicon (Si) target 42 is installed in one of the film forming chambers 4, and a silicon film is formed on the work 10. Each time the work 10 passes through the film forming chamber 4 in operation, the film on the surface of the work 10 becomes thicker. Each time the work 10 formed in the film forming chamber 4 in operation passes through the film forming chamber 4, the work 10 heads toward the film processing chamber 5, and the film on the work 10 is film-treated (step S06). For example, plasma is generated in a process gas containing oxygen gas, and oxygen ions are made to collide with the silicon film to oxidize the silicon film.

When the work 10 passes through the film forming chamber 4 and the film processing chamber 5 in operation and enters the monitoring section 6, the film thickness of the compound film formed on the work 10 is detected in the monitoring section 6 (step S07). ). The control device 80 compares the detected film thickness with the target film thickness (step S08). The target film thickness is stored in advance by the control device 80. When the detected film thickness does not reach the target film thickness (step S08, No), the control device 80 maintains the rotation of the rotary table 31 and steps without changing the film forming unit 40 currently in operation. Repeat S05 to step S08.

When the detected film thickness reaches the target film thickness (step S08, Yes), the control device 80 has a film forming section 40 to be operated next, that is, if there is a film forming section 40 which has not been operated yet (step S09, Yes). Yes), the operation of the film forming section 40 of the current film forming chamber 4 is stopped, and the film forming section 40 of the next film forming chamber 4 is operated (step S10). Then, when steps S05 to S08 are repeated and the detected film thickness reaches the target film thickness (step S08, Yes), the control device 80 ends the film formation and the film treatment on the work 10. On the other hand, if the control device 80 does not have the film forming unit 40 to be operated next (step S09, No), the control device 80 performs a process of terminating the film forming on the work 10 and the film processing.

For example, a niobium (Nb) target 42 is installed in the other film forming chamber 4, and a niobium film is formed on the work 10. In the membrane treatment chamber 5, the niobium membrane is oxidized by colliding oxygen ions with the niobium membrane. As a result, a silicon oxide film having a target thickness is formed on the lower layer of the work 10, and a niobium oxide film having a target thickness is formed on the upper layer of the silicon oxide film. The film forming chamber 4 is not limited to two, and three or more film forming chambers 4 may be arranged. Every time the control device 80 detects in the monitoring section 6 that the compound film has reached the target film thickness, the film forming chamber 4 to be operated may be switched and steps S05 to S08 may be repeated.

(Chamber)
The chamber 20 will be described in more detail. As shown in FIG. 3, the chamber 20 is formed by being surrounded by a disk-shaped ceiling 20a, a disk-shaped inner bottom surface 20b, and an annular inner peripheral surface 20c. The chamber 20 is provided with an exhaust port 21. An exhaust unit 90 is connected to the exhaust port 21. The exhaust unit 90 includes piping, a pump, a valve and the like (not shown). The inside of the chamber 20 is depressurized and becomes a vacuum by the exhaust by the exhaust unit 90 through the exhaust port 21.

(Transport section)
The transport unit 30 will be described in more detail. The transport unit 30 has a rotary table 31 and a motor 32. As shown in FIG. 3, the rotary table 31 of the transport unit 30 has a disk shape and is greatly expanded to the extent that it does not come into contact with the inner peripheral surface 20c. The transport unit 30 includes a motor 32 for rotating the rotary table 31, and the motor 32 continuously rotates at a predetermined rotation speed about the center of the circle of the rotary table 31 as a rotation axis. In this embodiment, the motor 32 rotates the rotary table 31 counterclockwise as shown in FIG. As a result, the transport unit 30 circulates and transports the work 10 along the transport path L, which is a circumferential locus. That is, the transport unit 30 circulates and transports the work 10 so as to repeatedly pass through the film forming chamber 4, the film processing chamber 5, and the monitoring section 6 in this order.

A holding portion 33 is arranged on the rotary table 31. The holding portion 33 is a groove, a hole, a protrusion, a jig, a holder, etc. arranged at a circumferentially equal arrangement position on the installation surface 311 of the rotary table 31, and the tray 34 on which the work 10 is placed is a mechanical chuck or an adhesive chuck. Hold by. The works 10 are arranged in a matrix on the tray 34, for example, and six holding portions 33 are arranged on the rotary table 31 at intervals of 60 °.

(Road lock part)
The load lock unit 70 carries the tray 34 on which the unprocessed work 10 is mounted from the outside into the chamber 20 by a transport means (not shown) while maintaining the vacuum of the chamber 20, and mounts the processed work 10. It is a device for carrying out the tray 34 to the outside of the chamber 20. Since a well-known structure can be applied to the load lock portion 70, the description thereof will be omitted.

(Film film chamber)
The film forming chamber 4 will be described in more detail. As shown in FIG. 3, a film forming section 40 is arranged in the film forming chamber 4. The film forming unit 40 includes a spatter source and a plasma generator. The spatter source includes a target 42, a backing plate 43 and an electrode 44. The plasma generator includes a power supply unit 46 and a sputter gas introduction unit 49.

The target 42 is a plate-shaped member, and is provided apart from the transport path L of the work 10 placed on the rotary table 31. The surface of the target 42 is held on the ceiling 20a of the chamber 20 so as to face the work 10 placed on the rotary table 31. For example, three targets 42 are installed, and the three targets 42 are provided at positions arranged on the vertices of a triangle in a plan view (see FIG. 1).

The backing plate 43 is a support member that holds the target 42. The backing plate 43 holds each target 42 individually. The electrode 44 is a conductive member for individually applying electric power to each target 42 from the outside of the chamber 20, and is electrically connected to the target 42. The electric power applied to each target 42 can be changed individually. In addition, the spatter source is appropriately provided with a magnet, a cooling mechanism, and the like, if necessary.

The power supply unit 46 is, for example, a DC power supply that applies a high voltage, and is electrically connected to the electrode 44. The power supply unit 46 applies electric power to the target 42 through the electrode 44. The rotary table 31 has the same potential as the grounded chamber 20, and a potential difference is generated by applying a high voltage to the target 42 side. The power supply unit 46 may be an RF power supply for performing high frequency sputtering.

The sputter gas introduction unit 49 has a pipe 48 and a gas introduction port 47, and is connected to a supply source of spatter gas G1 such as a cylinder, which is a facility of a factory or the like. The supply source of the sputter gas G1 may be held on the film forming apparatus 100 side. The pipe 48 of the sputter gas introduction portion 49 is connected to the supply source of the spatter gas G1 and airtightly penetrates the chamber 20 to extend into the inside of the chamber 20, and the end portion thereof is opened as a gas introduction port 47. The gas introduction port 47 opens between the rotary table 31 and the target 42, and introduces the spatter gas G1 for film formation into the processing space 41 formed between the rotary table 31 and the target 42. As the sputter gas G1, an inert gas can be adopted, and an argon gas or the like is suitable.

As shown in FIGS. 1 and 3, the inside of the chamber 20 is partitioned by a partition wall 22. The partition wall 22 is a square wall plate radially arranged from the center of the cylindrical shape, extends from the ceiling 20a toward the inner bottom surface 20b, and does not reach the inner bottom surface 20b. That is, a columnar space is secured on the inner bottom surface 20b side. The rotary table 31 is arranged in this columnar space. The lower end of the partition wall 22 faces the installation surface 311 of the work 10 on the rotary table 31 with a gap through which the work 10 mounted on the rotary table 31 passes. The film forming chamber 4 is partitioned by the partition wall 22.

In such a film forming unit 40, when the sputtering gas G1 is introduced from the sputtering gas introducing unit 49 and the power supply unit 46 applies a high voltage to the target 42 through the electrode 44, it is formed between the rotary table 31 and the target 42. The sputter gas G1 introduced into the processing space 41 is turned into plasma, and active species such as ions are generated. The ions in the plasma collide with the target 42, and the material constituting the target 42 is knocked out as sputtered particles.

Further, the work 10 circulated and conveyed by the rotary table 31 passes through the processing space 41. The sputtered particles are deposited on the work 10 when the work 10 passes through the processing space 41, and a film made of sputtered particles is formed on the work 10. The work 10 is circulated and conveyed by the rotary table 31, and the film is formed by repeatedly passing through the processing space 41. The film thickness that is deposited each time it passes through the film forming section 40 depends on the processing rate of the film processing section 50, but is preferably a thin film of, for example, about 1 to 2 atomic levels (5 nm or less). By circulating and transporting the work 10 a plurality of times, the thickness of the film is increased, and a film having a predetermined film thickness is formed on the work 10.

(Membrane treatment room)
The membrane treatment chamber 5 will be described in more detail. As shown in FIG. 3, the membrane processing unit 50 of the membrane processing chamber 5 is a plasma generator composed of a tubular body 51, a window member 52, an antenna 53, an RF power supply 54, a matching box 55, and a process gas introduction unit 58. To prepare for. Further, the membrane treatment unit 50 includes a process gas introduction unit 58. The process gas introduction unit 58 has a pipe 57 and a gas introduction port 56, and is connected to a supply source of the process gas G2 such as a cylinder, which is a facility in the factory. The supply source of the process gas G2 may be held on the film forming apparatus 100 side.

As shown in FIGS. 1 and 3, the tubular body 51 is a cylinder having a rectangular shape with rounded horizontal cross sections and has an opening. The tubular body 51 is fitted into the ceiling 20a of the chamber 20 so that its opening is separated from the rotary table 31 side, and protrudes into the internal space of the chamber 20. The tubular body 51 is made of the same material as the rotary table 31. The window member 52 is a flat plate of a dielectric material such as quartz having a shape substantially similar to the horizontal cross section of the tubular body 51. The window member 52 is provided so as to close the opening of the tubular body 51, and partitions the inside of the tubular body 51 from the processing space 59 in which the process gas G2 containing oxygen gas is introduced in the chamber 20. The processing space 59 is a space formed between the rotary table 31 and the inside of the tubular body 51 in the film processing unit 50. Oxidation processing is performed by repeatedly passing the work 10 circulated and conveyed by the rotary table 31 through the processing space 59. The window member 52 may be a dielectric such as alumina or a semiconductor such as silicon.

The antenna 53 is a conductor wound in a coil shape, and is arranged in the internal space of the tubular body 51 separated from the processing space 59 in the chamber 20 by the window member 52. To generate. It is desirable that the antenna 53 be arranged in the vicinity of the window member 52 so that the electric field generated from the antenna 53 is efficiently introduced into the processing space 59 via the window member 52. An RF power supply 54 for applying a high frequency voltage is connected to the antenna 53. A matching box 55, which is a matching circuit, is connected in series to the output side of the RF power supply 54. The matching box 55 stabilizes the plasma discharge by matching the impedances on the input side and the output side.

The pipe 57 of the process gas introduction portion 58 is connected to the supply source of the process gas G2, airtightly penetrates the chamber 20 and extends into the inside of the chamber 20, and the end portion thereof is opened as the gas introduction port 56. The gas introduction port 56 opens in the processing space 59 between the window member 52 and the rotary table 31, and introduces the process gas G2. The process gas G2 contains, for example, oxygen or nitrogen. The process gas G2 may contain an inert gas such as argon gas in addition to oxygen gas or nitrogen gas.

In such a film processing unit 50, a high frequency voltage is applied from the RF power supply 54 to the antenna 53. As a result, a high-frequency current flows through the antenna 53, and an electric field due to electromagnetic induction is generated. An electric field is generated in the processing space 59 via the window member 52, and inductively coupled plasma of the process gas G2 is generated. At this time, the process gas G2 is also ionized, and the ions collide with the membrane on the work 10 and bond with the atoms constituting the membrane. When the process gas G2 contains oxygen, the membrane treatment unit 50 oxidizes the membrane on the work 10. When the process gas G2 contains nitrogen, the film processing unit 50 nitrides the film on the work 10.

(Monitoring section)
The monitoring of the film thickness will be described in more detail. FIG. 4 is a block diagram showing the configuration of the monitoring unit 60 included in the film forming apparatus 100. As shown in FIG. 4, the film forming apparatus 100 includes a monitoring unit 60 for detecting the film thickness formed on the work 10. The monitoring unit 60 includes a detection window 65 arranged in the monitoring section 6 as a component, irradiates the work 10 with light through the detection window 65, and acquires the reflected light from the work 10 through the detection window 65. , The reflected light is analyzed to detect the film thickness. The control device 80 compares the film thickness detected by the monitoring unit 60 with the target film thickness, determines whether the film formation continues or ends, and controls each element of the film forming apparatus 100 based on the determination result. In addition to the detection window 65, the monitoring unit 60 includes a light projecting unit 62, a transmission unit 64, a spectroscopic unit 63, and an analysis unit 61.

The light projecting unit 62 is a light source. The light emitted by the light projecting unit 62 passes through the detection window 65 and reaches the work 10. For example, the wavelength band of light may be in the range of 200 nm or more and 800 nm or less, and ultraviolet light having a wavelength of 400 nm or less may be emitted. Examples of the light projecting unit 62 include a xenon lamp, a mercury xenon lamp, a halogen lamp, and the like. If the mercury xenon lamp is used, it can irradiate light in the ultraviolet region and increase the luminous flux. ..

The spectroscopic unit 63 obtains a spectrum of reflected light by dividing the reflected light from the work 10 transmitted through the detection window 65 into light of each wavelength. Typically, the spectroscopic unit 63 is a prism or a diffraction grating. The analysis unit 61 analyzes the spectrum of the reflected light that has passed through the spectroscopic unit 63, and detects the film thickness on the work 10. The analysis unit 61 includes each light receiving element such as a CCD or CMOS that individually receives light of each wavelength divided by the spectroscopic unit 63, and a processor such as a CPU.

The analysis unit 61 can apply various known film thickness detection methods as long as it is an optical measurement method, and for example, the analysis unit 61 detects the film thickness by the peak valley method (PV method). There is an optical path difference between the reflected light on the surface of the film and the reflected light on the surface of the work 10. When this optical path difference is an integral multiple of a certain wavelength, of the interference light of the reflected light on the surface of the work 10 and the reflected light on the film surface, the light of the wavelength component is added in the direction of matching and strengthening each other. Light having a wavelength component shifted by 1/2 wavelength is subtracted in the canceling direction. The analysis unit 61 specifies these wavelengths and detects the film thickness from 2nd = iλ (d is the film thickness, i is an integer, and λ is the specified wavelength).

The transmission unit 64 is arranged between the light projecting unit 62 and the detection window 65, and between the detection window 65 and the spectroscopic unit 63. The transmission unit 64 guides the light of the light projecting unit 62 incident from one end portion toward the detection window 65 on the other end portion side. Further, the transmission unit 64 receives the reflected light from the work 10 transmitted through the detection window 65 at the other end and guides the light toward the spectroscopic unit 63. Examples of such a transmission unit 64 include an optical fiber, but the present invention is not limited to this, and an optical system including various optical components such as a lens and a mirror may be used.

FIG. 5 is a schematic diagram showing an installation mode of the monitoring unit 60. As shown in FIG. 5, in the monitoring section 6, a cylindrical housing 67 is attached to the ceiling 20a of the chamber 20. The housing 67 extends from the ceiling 20a toward the installation surface 311 on which the work 10 of the rotary table 31 is installed. The housing 67 has an open end on the installation surface 311 side closed by a holder 66. The detection window 65 is held by the holder 66 via a sealing member. By holding the detection window 65 in the holder 66, the detection window 65 faces the installation surface 311 while being spaced apart from the installation surface 311 of the rotary table 31.

The detection window 65 faces the locus drawn by the work 10 moving on the rotary table 31 on the installation surface 311. Among them, it is preferable to position the detection window 65 on the inner peripheral side of the rotary table 31 in order to acquire the reflected light having a good S / N ratio. That is, the housing 67 is attached to the inner peripheral side of the rotary table 31. The inner peripheral side of the rotary table 31 is the rotation center side of the midpoint of the line segment along the radius R from the rotation center of the rotary table 31 to the outer peripheral edge. The peripheral speed of the rotary table 31 is slow on the inner peripheral side. Therefore, the work 10 continues to stay directly under the detection window 65 for longer than the time for acquiring the reflected light of the light amount having a good S / N ratio.

The transmission unit 64 is arranged in the housing 67, and the end portion thereof is directed to the detection window 65. The transmission unit 64 is drawn out from the ceiling 20a of the chamber 20 through the inside of the housing 67. According to the transmission unit 64 and the detection window 65, the light transmitted by the transmission unit 64 passes through the detection window 65, heads toward the work 10 moving directly under the detection window 65, and heads toward the work 10. Is reflected by the surface of the work 10 or the film formed on the work 10, passes through the detection window 65, and is transmitted by the transmission unit 64.

FIG. 6 is an enlarged view of the monitoring section 6 extracted. As shown in FIGS. 5 and 6, a plate-shaped portion 68 is attached around the detection window 65. The plate-shaped portion 68 is a wide ring-shaped plate centered on the detection window 65. The plate-shaped portion 68 has a facing surface 681 facing the installation surface 311 of the rotary table 31. The facing surface 681 extends around the detection window 65 with the side peripheral surface of the holder 66 as a base end, and extends along the installation surface 311 of the rotary table 31. The plate-shaped portion 68 preferably extends parallel to the installation surface 311. As long as the plate-shaped portion 68 is unlikely to bend, the material and thickness of the plate-shaped portion 68 are not particularly limited, and for example, an aluminum plate having a thickness of 5 mm may be used as the plate-shaped portion 68.

The plate-shaped portion 68 is arranged at a distance H from the film forming surface of the work 10 mounted on the rotary table 31. The interval H is set to a size or larger so that the passing work 10 does not come into contact with the plate-shaped portion 68, but it is preferably as narrow as possible, and can be set to, for example, 5 mm. Further, this interval H can be the same as the interval between the end portion of the partition wall 22 on the rotary table 31 side and the film forming surface of the work 10. Further, the length D of the plate-shaped portion 68, that is, the width in the ring radial direction from the inner peripheral edge to the outer peripheral edge of the plate-shaped portion 68 is equal to or larger than the mean free path of the sputter particles, that is, the molecules of the material constituting the target.

Further, it is preferable that the facing surface 681 of the plate-shaped portion 68 has a surface roughness of 4 μm or more and 14 μm or less in arithmetic average roughness Ra. It is more preferable that the facing surface 681 of the plate-shaped portion 68 made of stainless steel (SUS) has a surface roughness of 4 μm or more and 10 μm or less in arithmetic average roughness Ra. It is more preferable that the facing surface 681 of the aluminum plate-shaped portion 68 has a surface roughness of 6 μm or more and 14 μm or less in arithmetic average roughness Ra. The facing surface 681 having this surface roughness can be formed, for example, by performing a blast treatment with an abrasive having a particle size of # 20 or more and # 60 or less.

FIG. 7 is a schematic view showing the operation of the plate-shaped portion 68. Flying particles 421 are floating around the detection window 65. The flying particles 421 are, for example, spatter particles that leak from the film forming chamber 4 and drift. The flying particles 421 must pass through a narrow and long space defined by the plate-shaped portion 68 and the installation surface 311 of the rotary table 31 before reaching the detection window 65. Therefore, many flying particles 421 come into contact with the plate-shaped portion 68 and are captured by the plate-shaped portion 68 before reaching the detection window 65. Many flying particles 421 are blocked by the plate-shaped portion 68 and cannot reach the detection window 65. In this way, the plate-shaped portion 68 captures the flying particles 421 and suppresses the contamination of the detection window 65.

In particular, if the plate-shaped portion 68 has a length D equal to or greater than the mean free path of the flying particles 421, the probability of capturing the flying particles 421 is increased, and the contamination of the detection window 65 is further suppressed. The distance H from the film forming surface of the work 10 to the plate-shaped portion 68 is a very narrow distance, and even if the flying particles 421 are obliquely incident from the gap H toward the detection window 65, the plate-shaped portion 68 is formed. This is because if the length is longer than the mean free path, the possibility of being caught in the middle is higher. The length D of the plate-shaped portion 68 is preferably more than 20 cm, more preferably 30 cm or more. As a result of confirmation by the present inventor in an experiment, it is found that the distance H from the film forming surface of the work 10 mounted on the rotary table 31 to the plate-shaped portion 68 is 5 mm, and the length D of the plate-shaped portion 68 is 30 cm. The detection window 65 did not need to be cleaned for at least 3 months.

Further, the facing surface 681 of the plate-shaped portion 68 has a surface roughness of 4 μm or more and 10 μm or less in arithmetic average roughness Ra. Therefore, the probability that the flying particles 421 that have come into contact with the plate-shaped portion 68 will adhere to the facing surface 681 increases. Further, even if the plate-shaped portion 68 does not adhere to the facing surface 681, the reflection direction of the flying particles 421 is different as compared with the case where the facing surface 681 is smooth. That is, the number of flying particles 421 that are reflected in a direction different from that of the detection window 65 increases. Therefore, the probability that the flying particles 421 that could not be captured by the facing surface 681 are reflected toward the detection window 65 is also reduced. Therefore, the facing surface 681 having a surface roughness of 4 μm or more and 10 μm or less in the arithmetic average roughness Ra can further reduce the flying particles 421 incident on the detection window 65.

Further, as described with reference to FIGS. 8 and 9, the number of flying particles 421 incident on the detection window 65 can be further reduced. FIG. 8 is an enlarged view of the vicinity of the detection window 65. As shown in FIG. 8, the detection window 65 has an outer end face 651. The outer end surface 651 is a surface facing the installation surface 311 of the rotary table 31, is a surface that emits light to the work 10 and is incident with the reflected light from the work 10. Further, the holder 66 has a surrounding wall 661 that surrounds the entire circumference of the detection window 65. The detection window 65 is fitted into a hole defined by the surrounding wall 661, and the entire circumference is supported by the inner peripheral surface of the surrounding wall 661.

The surrounding wall 661 extends toward the installation surface 311 of the rotary table 31 so as not to cover the outer end surface 651, and protrudes from the outer end surface 651 toward the installation surface 311 of the rotary table 31 over the entire circumference. In other words, the distance between the end of the surrounding wall 661 and the installation surface 311 is narrower than the distance between the outer end surface 651 and the installation surface 311 of the rotary table 31. In short, the outer end face 651 is positioned recessed from the tip of the surrounding wall 661.

The outer end surface 651 of the detection window 65 is an inclined surface inclined with respect to the central axis 65A of the detection window 65. The outer end surface 651 that has become an inclined surface faces in the direction in which the film forming chamber 4 exists, that is, in the direction opposite to the inner peripheral side of the rotary table 31. In other words, the outer end surface 651 is inclined so as to face the outer peripheral side of the rotary table 31. When the monitoring section 6 and the film forming chamber 4 are located on the same circumference, the direction far from the film forming chamber 4 is the direction opposite to the inner peripheral side of the rotary table 31. In order to reduce the area ratio of the outer end face 651 exposed in the direction in which more flying particles 421 come flying, the outer end face 651 is directed in the direction opposite to the inner peripheral side of the rotary table 31. Therefore, it is preferable that the outer end surface 651 faces 180 ° in the opposite direction, but the outer end face 651 should face in the direction opposite to the inner peripheral side of the rotary table 31 even at 1 ° with respect to the radial direction from the center of the chamber 20 to the outside. For example, no matter where the film forming chambers 4 are arranged on the same circumference, the outer end face 651 can be directed away from all the film forming chambers 4. As a result, the area ratio of the outer end face 651 exposed in the direction in which more flying particles 421 come flying is reduced.

FIG. 9 is a schematic view showing the positional relationship between the surrounding wall 661 and the outer end surface 651, and the action based on the orientation of the outer end surface 651. As shown in FIG. 9, the flying particles 421 that reach the vicinity of the detection window 65 without being captured by the plate-shaped portion 68 are stochastically non-zero. However, the outer end face 651 of the detection window 65 is recessed into the area surrounded by the surrounding wall 661. Therefore, the passage leading to the detection window 65 has a maze structure that starts from the outer peripheral edge of the plate-shaped portion 68 and bends directly under the detection window 65. Therefore, even if the flying particles 421 can pass between the plate-shaped portion 68 and the installation surface 311 of the rotary table 31, the flying particles can reach the detection window 65 if the course cannot be changed toward the detection window 65 due to reflection or the like. However, the adhesion of the flying particles 421 to the detection window 65 is further suppressed.

However, in order to obtain a sufficient amount of reflected light required for analysis, it is preferable that the light emitted from the detection window 65 irradiates one point of the work 10. Since light is diffused when the detection window 65 and the surface of the work 10 are long distances, the distance between the detection window 65 and the surface of the work 10 is preferably about 40 mm. Further, the position of the tip portion of the surrounding wall 661 is limited to the height at which the work 10 can pass. Then, the distance (distance between the tip end portion of the surrounding wall 661 and the outer end surface 651) that the outer end surface 651 retracts inward of the surrounding wall 661 is preferably 40 mm at the maximum optically.

There may also be flying particles 421 flying at a steep angle toward the region surrounded by the surrounding wall 661 by repeating reflections between the plate-shaped portion 68 and the installation surface 311 of the rotary table 31. However, the outer end surface 651 is inclined with respect to the central axis 65A of the detection window 65, and faces the direction opposite to the direction in which the film forming chamber 4 that is the source of the flying particles 421 is located. Therefore, the flying particles 421 flying from the film forming chamber 4 side cannot enter the outer end face 651 and surround the outer end face 651 unless they face the outer end face 651 at an angle close to vertical toward the region surrounded by the surrounding wall 661. It is captured on the inner peripheral surface of the wall 661. Therefore, the adhesion of the flying particles 421 to the detection window 65 is further suppressed. The inner peripheral surface of the surrounding wall 661 may also be roughened. When the surface is roughened, the probability that the flying particles 421 are captured on the inner peripheral surface of the surrounding wall 661 increases.

As shown in FIGS. 8 and 9, the inner end surface 652 of the detection window 65, that is, the end surface opposite to the outer end surface 651 and facing the internal space of the housing 67, is the central axis of the detection window 65. It may be orthogonal to 65A or diagonally crossed. Preferably, the inner end face 652 is parallel to the outer end face 651 tilted with respect to the central axis 65A of the detection window 65. As shown in FIG. 8, the light L1 emitted from the transmission unit 64 is parallel to the central axis 65A of the detection window 65, and if the outer end surface 651 and the inner end surface 652 are parallel, the light L1 passes through the detection window 65. When emitting light, it returns parallel to the central axis 65A of the detection window 65 and is incident perpendicular to the work 10. Further, the reflected light from the work 10 can be incident on the transmission unit 64 by following the same optical path as the light emitted from the transmission unit 64.

Moreover, as shown in FIG. 8, if the inner end surface 652 is tilted with respect to the central axis 65A of the detection window 65, the light L2 emitted from the transmission unit 64 and reflected by the inner end surface 652 of the detection window 65 is, for example. It is difficult to return to the transmission unit 64 toward the inner peripheral surface of the housing 67, and it is difficult to interfere with the reflected light from the surface of the work 10 or the surface of the film. Since the outer end surface 651 is also tilted, the light L3 traveling in the detection window 65 and reflected by the outer end surface 651 also heads toward the inner peripheral surface of the housing 67 or the inner peripheral surface of the holder 66, and returns to the transmission unit 64, for example. It is difficult to interfere with the reflected light from the surface of the work 10 or the surface of the film. Therefore, the accuracy of film thickness detection is improved.

In order for the light reflected by the outer end surface 651 and the inner end surface 652 to be directed in a direction other than the direction in which the light is incident on the transmission unit 64, the inclination angle of the outer end surface 651 and the inner end surface 652 is set with respect to the central axis 65A of the detection window 65. It is preferably 1.5 ° or more and 45 ° or less. Within this range, the light reflected by the outer end surface 651 and the inner end surface 652 is unlikely to return to the transmission unit 64.

(effect)
As described above, the film forming apparatus 100 is provided with a monitoring unit 60 for monitoring the film thickness on the work 10. The monitoring unit 60 includes a detection window 65, a light projecting unit 62, and an analysis unit 61. The detection window 65 is arranged on the transport path L of the work 10 by the transport unit 30 and outside the film forming chamber 4, and light for film thickness detection is transmitted. Such a monitoring unit 60 is further provided with a plate-shaped portion 68. The plate-shaped portion 68 extends along the installation surface 311 of the rotary table 31 while facing the installation surface 311 on which the work 10 of the rotary table 31 is installed.

As a result, between the film forming portion and the detection window 65, there is a space defined by the plate-shaped portion 68 and the installation surface 311 of the rotary table 31. Many flying particles 421 passing through this space are captured by the plate-shaped portion 68 by the time they reach the detection window 65. Therefore, it is possible to suppress the adhesion of the flying particles 421 to the detection window 65. By suppressing the adhesion of the flying particles 421 to the detection window 65, the film thickness detection accuracy on the work 10 is improved, the cleaning frequency of the detection window 65 is reduced, and the operating rate of the film forming apparatus 100 is improved. ..

The plate-shaped portion 68 is preferably installed around the detection window 65. If it is installed around the detection window 65, the area of the plate-shaped portion 68 for obtaining the effect of preventing the flying particles 421 from reaching the detection window 65 can be minimized. However, it suffices if the spatter particles leaking from the film forming chamber 4 can be suppressed from reaching the detection window 65, and it is sufficient that the plate-shaped portion 68 can be installed on the route where the sputter particles reach the detection window 65. That is, the plate-shaped portion 68 may be arranged between the film forming chamber 4 and the detection window 65 in the transport path L.

For example, the plate-shaped portion 68 may be provided at the lower end portion of the partition wall 22 that defines the film forming chamber 4. In this case, the plate-shaped portion 68 extends toward the outside of the film forming chamber 4 with the partition wall 22 as the base end. Alternatively, the plate-shaped portion 68 may be provided at the lower end portion of the tubular body 51 that defines the film processing chamber 5. In this case, the plate-shaped portion 68 extends toward the outside of the membrane treatment chamber 5 with the tubular body 51 as a base end. Further, it may extend into the monitoring section 6.

Further, the plate-shaped portion 68 has a ring shape that radiates from the entire circumference of the detection window 65, but it is sufficient that the plate-shaped portion 68 can be installed on the route where the sputter particles reach the detection window 65. That is, if the direction in which the spatter particles fly is local, the plate-shaped portion 68 may be expanded in the local direction. For example, in the film forming apparatus 100, the plate-shaped portion 68 may have a shape extending only to the film processing chamber 5 side as long as there are no or few flying particles 421 flying from the load lock portion 70 side. For example, it may be half-moon shaped.

Further, the plate-shaped portion 68 has a length equal to or longer than the mean free path of the molecules of the material constituting the target 42, and extends along the installation surface 311 of the rotary table 31. This increases the probability that the flying particles 421 will come into contact with the plate-shaped portion 68. Therefore, the plate-shaped portion 68 can capture more flying particles 421 and further suppress adhesion to the detection window 65.

Further, the plate-shaped portion 68 faces the installation surface 311 of the rotary table 31 and has a facing surface having a surface roughness of 4 μm or more and 14 μm or less in arithmetic average roughness Ra. As a result, the flying particles 421 are suppressed from being reflected by the plate-shaped portion 68, and the probability that the flying particles 421 stay in the plate-shaped portion 68 is increased. Therefore, the plate-shaped portion 68 can capture more flying particles 421 and further suppress adhesion to the detection window 65.

Further, the detection window 65 faces the installation surface 311 of the rotary table 31 and has an outer end surface 651 in which light from the light projecting unit 62 is emitted toward the work 10, and the outer end surface 651 is the central axis of the detection window 65. It was tilted with respect to 65A so that it faced in the direction opposite to the inner peripheral side of the rotary table 31. As a result, the area ratio in which the outer end face 651 is exposed becomes smaller in the direction in which more flying particles 421 fly, and it becomes difficult for the flying particles 421 to come into contact with the outer end face 651. Therefore, adhesion to the detection window 65 can be suppressed.

Further, the holder 66 holding the detection window 65 has a surrounding wall 661 surrounding the outer end surface 651, so that the outer end surface 651 is recessed from the end facing the installation surface 311 in the surrounding wall 661. bottom. That is, the holder 66 holds the detection window 66 so that the distance between the end portion of the surrounding wall 611 and the installation surface 311 is narrower than the distance between the outer end surface 651 and the installation surface 311. As a result, even if the flying particles 421 can reach the vicinity of the detection window 65, they are blocked by the surrounding wall 661 and it becomes difficult for the flying particles 421 to come into contact with the outer end surface 651. Therefore, adhesion to the detection window 65 can be suppressed.

Further, the detection window 65 is located on the inner peripheral side of the rotary table 31. Since the peripheral speed of the inner peripheral side of the rotary table 31 is slow, a sufficient amount of light can be applied to the work 10. Therefore, a good S / N ratio can be achieved and the accuracy of film thickness detection is improved.

In the film forming apparatus 100, the detection window 65 is located downstream of the film processing chamber 5 in the transport direction of the work 10, but the present invention is not limited to this. That is, depending on the film forming apparatus 100, particles of the compound may be deposited on the work 10 in the film forming chamber 4. For example, the process gas G2 may also be introduced into the processing space 41, and the particles knocked out from the target 42 may react with the ions in the process gas G2 to form a compound, and this compound may be deposited on the work 10. In this case, the film treatment chamber 5 can be omitted, and the monitoring section 6 is arranged adjacent to the film formation chamber 4. Therefore, the detection window 65 is located downstream of the film forming chamber 4 in the transport direction of the work 10.

Further, the monitoring unit 60 acquires the light reflected from the work 10 through the detection window 65, and uses the analysis unit 61 to detect the film thickness based on the light reflected from the work 10. However, the optical film thickness detection method is not limited to this. For example, apart from the detection window 65 that emits the light from the light projecting unit 62, the detection window 65 that transmits the light transmitted through the work 10 is installed on the opposite side of the rotary table 31. The work 10 is made of a transparent material, and the rotary table 31 and the tray 34 are also made of a transparent member. The spectroscopic unit 63 and the analysis unit 61 are installed in an optical system including a detection window 65 that transmits light transmitted through the work 10. The analysis unit 61 may detect the film thickness from the spectral transmittance characteristics based on the spectrum of the transmitted light.

(Other embodiments)
The present invention is not limited to the above embodiment, but also includes other embodiments shown below. The present invention also includes a combination of all or any of the above embodiments and the following other embodiments. Further, various omissions, replacements, and changes can be made to these embodiments without departing from the scope of the invention, and modifications thereof are also included in the present invention.

Even if the film forming chamber 4, the film processing chamber 5, and the monitoring section 6 are located on the bottom side of the chamber 20, and the vertical relationship between the film forming chamber 4, the film processing chamber 5, the monitoring section 6 and the rotary table 31 is reversed. good. In this case, the installation surface 311 of the rotary table 31 is a surface facing downward when the rotary table 31 is in the horizontal direction, that is, a lower surface. The installation surface of the film forming apparatus 100 may be a floor surface, a ceiling surface, or a side wall surface. Further, the arrangement of the rotary table 31 is not limited to horizontal, and may be a vertical arrangement or an inclined arrangement. Further, the installation surface 311 of the rotary table 31 may be provided on both opposite sides.

That is, the direction of the rotation plane of the rotary table 31 may be any direction, and the positions of the tray 34, the film forming unit 40, the film processing unit 50, and the detection window 65 are the positions of the work held by the tray 34. 10 may be processed by the film forming unit 40 and the film processing unit 50, and may be at a position where light irradiation can be performed by the detection window 65.

In the film forming apparatus 100, the film is subjected to processing such as oxidation and nitridation by the film processing unit 50, and the film becomes a compound film, so that the light transmittance of the film is enhanced and the film film can be detected. In the film forming apparatus 100, a process gas can be introduced into the film forming chamber 4 to oxidize or nitrid the sputtered particles while forming a film on the work 10. In this case, a compound film having high light transparency is formed in the film forming chamber 4, the film processing unit 50 may be eliminated, and the monitoring section 6 may be provided downstream in the transport direction of the film forming chamber 4. That is, in the present embodiment, if the film thickness can be detected for the oxidized or nitrided compound film, the configuration is not limited to the configuration in which the monitoring section 6 is provided downstream in the transport direction of the film treatment chamber 5.

Further, in the above embodiment, it is determined whether the film formation is continued or completed based on the film thickness detected by the monitoring unit 60, and each element of the film forming apparatus is controlled based on the determination result. Such feedback control does not have to be performed in the film forming process of all the works 10. For example, when the work 10 is carried into the chamber 20 a plurality of times and the same film forming process is performed, feedback control is performed for the work 10 carried in the first time, and the work 10 carried in after the second time is subjected to feedback control. On the other hand, it may be determined whether the film formation is continued or the film formation is completed based on the film formation time taken at the first time, and each element of the film formation apparatus may be controlled. That is, in the present embodiment, it is sufficient that the film thickness formed on the work 10 carried into the chamber 20 can be detected at an arbitrary time point, and the film thickness is not limited to the detection of all the work 10.

10 Work 20 Chamber 20a Ceiling 20b Inner bottom surface 20c Inner peripheral surface 21 Exhaust port 22 Partition wall 30 Transport section 31 Rotating table 311 Installation surface 32 Motor 33 Holding section 34 Tray 4 Film forming chamber 40 Film forming section 41 Processing space 42 Target 421 Flying Particle 43 Backing plate 44 Electrode 46 Power supply 47 Gas inlet 48 Piping 49 Spatter gas inlet 5 Membrane treatment chamber 50 Membrane treatment 51 Cylindrical body 52 Detection window material 53 Antenna 54 RF power supply 55 Matching box 56 Gas inlet 57 Piping 58 Process gas introduction unit 59 Processing space 6 Monitoring unit 60 Monitoring unit 61 Analysis unit 62 Flooding unit 63 Spectro unit 64 Transmission unit 65 Detection window 651 Outer end surface 652 Inner end surface 65A Central axis 66 Holder 661 Surrounding wall 67 Housing 68 Plate shape Section 681 Facing surface 70 Load lock section 80 Control device 90 Exhaust section 100 Film forming device G1 Spatter gas G2 Process gas

Claims (10)

A transport unit that has a rotary table that rotates by installing the work on the installation surface and that circulates and transports the work along a circumferential transport path by rotating the rotary table.
A film forming chamber facing the transport path and forming a film on the work,
It has a target which is arranged in the film forming chamber and is a material source of the film, and a plasma generator which plasmaizes the sputter gas introduced between the target and the rotary table, and the target is formed by plasma. A film forming portion that is sputtered to form a film on the work,
A monitoring unit that monitors the thickness of the film on the work,
Equipped with
The monitoring unit
A detection window arranged outside the film formation chamber facing the transport path and transmitting light for film thickness detection, and a detection window.
A light projecting unit that irradiates the work on which the film is formed through the detection window, and a light projecting unit.
An analysis unit that detects the thickness of the film based on the light applied to the work and the film, and
A plate-shaped portion arranged between the film formation chamber and the detection window outside the film formation chamber and extending along the installation surface while facing the installation surface of the rotary table.
To have
A film forming apparatus characterized by. The plate-shaped portion extends along the installation surface with a length equal to or longer than the mean free path of the molecules of the material constituting the target.
The film forming apparatus according to claim 1. The plate-shaped portion faces the installation surface of the rotary table and has a facing surface having a surface roughness of 4 μm or more and 14 μm or less in arithmetic average roughness Ra.
The film forming apparatus according to claim 1 or 2. The plate-shaped portion shall be installed around the detection window.
The film forming apparatus according to any one of claims 1 to 3. The plate-shaped portion shall be installed at intervals on the rotary table through which the work can pass.
The film forming apparatus according to any one of claims 1 to 4. The detection window faces the installation surface of the rotary table, and has an end surface in which light from the light projecting unit is emitted toward the work.
The end face is inclined with respect to the central axis of the detection window and faces in the direction opposite to the inner peripheral side of the rotary table.
The film forming apparatus according to any one of claims 1 to 5. A holder for holding the detection window is provided.
The detection window faces the installation surface of the rotary table, and has an end surface in which light from the light projecting unit is emitted toward the work.
The holder has a surrounding wall that surrounds the end face.
The distance between the end of the surrounding wall and the installation surface is narrower than the distance between the end surface and the installation surface.
The film forming apparatus according to any one of claims 1 to 5. The detection window shall be located on the inner peripheral side of the rotary table.
The film forming apparatus according to any one of claims 1 to 7. A film treatment chamber facing the transport path and located downstream of the film-forming chamber in the transport direction of the work and chemically reacting the film formed in the film-forming portion.
A membrane treatment unit which is arranged in the membrane treatment chamber and has a process gas introduction unit for introducing a process gas, a plasma generator for converting the process gas into plasma, and a membrane treatment unit for chemically reacting the membrane.
Further prepare
The detection window is located downstream of the membrane processing chamber in the transport direction of the work.
The film forming apparatus according to any one of claims 1 to 8. The detection window further transmits the light reflected from the work.
The analysis unit detects the film thickness based on the light reflected from the work.
The film forming apparatus according to any one of claims 1 to 9.

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