JP2022027992A - 配線基板及びその製造方法 - Google Patents
配線基板及びその製造方法 Download PDFInfo
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- JP2022027992A JP2022027992A JP2021205886A JP2021205886A JP2022027992A JP 2022027992 A JP2022027992 A JP 2022027992A JP 2021205886 A JP2021205886 A JP 2021205886A JP 2021205886 A JP2021205886 A JP 2021205886A JP 2022027992 A JP2022027992 A JP 2022027992A
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- rubber
- acrylate
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- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 4
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- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
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- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- SRSFOMHQIATOFV-UHFFFAOYSA-N octanoyl octaneperoxoate Chemical compound CCCCCCCC(=O)OOC(=O)CCCCCCC SRSFOMHQIATOFV-UHFFFAOYSA-N 0.000 description 1
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- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
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Images
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- Structure Of Printed Boards (AREA)
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- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
伸縮性樹脂層形成用のワニスとして、以下の樹脂ワニスA~Fを調製した。
(A)成分としての水添型スチレンブタジエンゴム(旭化成(株)製、タフテックP1500、商品名)30gと、カップリング剤としての3-ウレイドプロピルトリエトキシシラン(モメンティブ・パフォーマンス・マテリアルズ・ジャパン製、A-1160、商品名)0.3gと、溶剤としてのトルエン70gとを攪拌しながら混合し樹脂ワニスAを得た。
(A)成分としての水添型スチレンブタジエンゴム(JSR(株)製、ダイナロン2324P、商品名)20gと、(B)成分としてのブタンジオールジアクリレート(日立化成(株)製、ファンクリルFA-124AS、商品名)5gと、(C)成分としてのビス(2,4,6-トリメチルベンゾイル)フェニルホスフィンオキシド(BASF(株)製、イルガキュア819、商品名)0.4gと、カップリング剤としての3-アミノプロピルトリエトキシシラン(信越シリコーン(株)製、KBE-903、商品名)0.25gと、溶剤としてのトルエン15gとを撹拌しながら混合し、樹脂ワニスBを得た。
(A)成分としての水添型スチレンブタジエンゴム(JSR(株)製、ダイナロン2324P、商品名)20gと、(B)成分としてのノナンジオールジアクリレート(日立化成(株)製、ファンクリルFA-129AS、商品名)5gと、(C)成分としてのビス(2,4,6-トリメチルベンゾイル)フェニルホスフィンオキシド(BASF(株)製、イルガキュア819、商品名)0.4gと、カップリング剤としての3-イソシアネートプロピルトリメトキシシラン(モメンティブ・パフォーマンス・マテリアルズ・ジャパン製、Y-5187、商品名)0.25gと、溶剤としてのトルエン15gとを撹拌しながら混合し、樹脂ワニスCを得た。
(A)成分としての水添型スチレンブタジエンゴム(JSR(株)製、ダイナロン2324P、商品名)20gと、(B)成分としてのノナンジオールジアクリレート(日立化成(株)製、ファンクリルFA-129AS、商品名)5gと、(C)成分としてのビス(2,4,6-トリメチルベンゾイル)フェニルホスフィンオキシド(BASF(株)製、イルガキュア819、商品名)0.4gと、カップリング剤としての3-トリメトキシシリルプロピルコハク酸無水物(信越シリコーン(株)製、X-12-967C、商品名)0.25gと、溶剤としてのトルエン15gとを撹拌しながら混合し、樹脂ワニスDを得た。
(A)成分としてのアクリルポリマ((株)クラレ製、クラリティLA2140、商品名)20gと、(B)成分としての脂肪鎖変性エポキシ樹脂(DIC(株)製、EXA4816、商品名)5gと、(C)成分としての2-フェニルイミダゾール(四国化成(株)製、2PZ、商品名)0.5gと、カップリング剤としての3-メタクリロキシプロピルトリメトキシシラン(KBM-503、商品名)0.3gと、溶剤としてのメチルエチルケトン15gとを撹拌しながら混合し、樹脂ワニスEを得た。
(A)成分としての水添型スチレンブタジエンゴム(JSR(株)製、ダイナロン2324P、商品名)20gと、(B)成分としてのノナンジオールジアクリレート(日立化成(株)製、ファンクリルFA-129AS、商品名)5gと、(C)成分としてのビス(2,4,6-トリメチルベンゾイル)フェニルホスフィンオキシド(BASF(株)製、イルガキュア819、商品名)0.4gと、溶剤としてのトルエン15gとを撹拌しながら混合し、樹脂ワニスFを得た。
実施例1
[伸縮性樹脂層を有する積層フィルム]
キャリアフィルムとして離型処理ポリエチレンテレフタレート(PET)フィルム(帝人デュポンフィルム(株)製「ピューレックスA31」、厚み25μm)を準備した。このPETフィルムの離型処理面上にナイフコータ((株)康井精機製「SNC-350」を用いて樹脂ワニスAを塗布した。塗膜を乾燥機((株)二葉科学製「MSO-80TPS」)中100℃で20分乾燥して、塗工後の厚みが100μmである伸縮性樹脂層を形成させた。形成された伸縮性樹脂層に、キャリアフィルムと同じ離型処理PETフィルムを、離型処理面が伸縮性樹脂層側になる向きで保護フィルムとして貼付けて、積層フィルムAを得た。
[導体層付積層板]
積層フィルムAの保護フィルムを剥離し、銅箔(日本電解(株)製、YGP-12、商品名)の粗化面側に積層フィルムAの伸縮性樹脂層を重ねた。真空加圧式ラミネータ(ニチゴー・モートン(株)「V130」)を用いて、圧力0.5MPa、温度90℃及び加圧時間60秒の条件で圧着して、導体層付積層板を作製した。
樹脂ワニスAを樹脂ワニスBに変更したこと以外は実施例1と同様にして、銅箔及び未硬化の樹脂層を有する積層体を得た。その後、紫外線露光機(ミカサ(株)「ML-320FSAT」)によって紫外線(波長365nm)を2000mJ/cm2照射することで樹脂層を硬化させて、導体層付積層板を得た。
樹脂ワニスBを樹脂ワニスCに変更したこと以外は、実施例2と同様にして、導体層付積層板を得た。
樹脂ワニスBを樹脂ワニスDに変更したこと以外は、実施例2と同様にして、導体層付積層板を得た。
樹脂ワニスAを樹脂ワニスEに変更したこと以外は実施例1と同様にして、銅箔及び未硬化の樹脂層を有する積層体を得た。その後、乾燥機を用いて180℃1時間の条件で樹脂層を硬化させて、導体層付積層板を得た。
樹脂ワニスBを樹脂ワニスFに変更したこと以外は、実施例2と同様にして、導体層付積層板を得た。
各導体層付積層板の導体層上に、幅10mm、長さ100mmの部分を形成した。この一端を、導体層(回路層)及び伸縮性樹脂層の界面で剥がした後、つかみ具でつかみ、垂直方向に引き剥がした時の荷重を測定した。測定は、島津製作所(株)製オートグラフEZ-Testを使用して、室温中で、引張り速度約50mm/分の条件で実施した。評価結果を表1に示す。
実施例1~5及び比較例1で作製した導体層付積層板の導体層を過硫酸アンモニウム水溶液により全面エッチングした。その後,伸縮性樹脂層を20%まで引張変形した後の回復率(%)を測定した。測定は、Illinois Tool Works Inc製マイクロフォース試験機Instron 5948を使用して、室温で実施した。評価結果を表1に示す。
Claims (11)
- カップリング剤を含有する伸縮性樹脂層と、
前記伸縮性樹脂層上に設けられ、配線パターンを形成している導体箔と、
を有する、配線基板。 - 前記カップリング剤がシランカップリング剤である、請求項1に記載の配線基板。
- 前記カップリング剤が、(メタ)アクリル基、ビニル基、エポキシ基、アミノ基、ウレイド基、メルカプト基、スルフィド基、イソシアヌレート基、イソシアネート基及び酸無水物基からなる群より選ばれる少なくとも1種の官能基を有する、請求項1又は2に記載の配線基板。
- 前記伸縮性樹脂層を歪み20%まで引張変形した後の回復率が80%以上である、請求項1~3のいずれか一項に記載の配線基板。
- 前記伸縮性樹脂層が、(A)ゴム成分を含有し、
前記ゴム成分が、アクリルゴム、イソプレンゴム、ブチルゴム、スチレンブタジエンゴム、ブタジエンゴム、アクリロニトリルブタジエンゴム、シリコーンゴム、ウレタンゴム、クロロプレンゴム、エチレンプロピレンゴム、フッ素ゴム、硫化ゴム、エピクロルヒドリンゴム、及び塩素化ブチルゴムからなる群より選ばれる少なくとも1種を含む、請求項1~4のいずれか一項に記載の配線基板。 - 前記ゴム成分の含有量が、前記伸縮性樹脂層の全質量に対して30質量%以上である、請求項5に記載の配線基板。
- 前記伸縮性樹脂層が、(B)架橋成分の架橋重合体を更に含有する、請求項1~6のいずれか一項に記載の配線基板。
- 前記架橋成分が、(メタ)アクリル基、ビニル基、エポキシ基、スチリル基、アミノ基、イソシアヌレート基、ウレイド基、シアネート基、イソシアネート基、及びメルカプト基からなる群より選ばれる少なくとも1種の反応性基を有する化合物である、請求項7に記載の配線基板。
- 請求項1~8のいずれか一項に記載の配線基板と、前記配線基板に搭載された電子素子と、を備えるストレッチャブルデバイス。
- カップリング剤を含有する伸縮性樹脂層と、前記伸縮性樹脂層上に設けられた導体箔と、を有し、請求項1~8のいずれか一項に記載の配線基板を形成するために用いられる、配線基板形成用積層板。
- カップリング剤を含有する伸縮性樹脂層と前記伸縮性樹脂層上に積層された導体箔とを有する積層板を準備する工程と、
前記導体箔上にエッチングレストを形成する工程と、
前記エッチングレジストを露光し、露光後の前記エッチングレジストを現像して、前記導体箔の一部を覆うレジストパターンを形成する工程と、
前記レジストパターンによって覆われていない部分の前記導体箔を除去する工程と、
前記レジストパターンを除去する工程と、
を含む、請求項1~8のいずれか一項に記載の配線基板を製造する方法。
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