JP2021534280A - 微粒子材料およびそれを形成する方法 - Google Patents
微粒子材料およびそれを形成する方法 Download PDFInfo
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- JP2021534280A JP2021534280A JP2021507498A JP2021507498A JP2021534280A JP 2021534280 A JP2021534280 A JP 2021534280A JP 2021507498 A JP2021507498 A JP 2021507498A JP 2021507498 A JP2021507498 A JP 2021507498A JP 2021534280 A JP2021534280 A JP 2021534280A
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- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 229910052622 kaolinite Inorganic materials 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 description 1
- 239000011654 magnesium acetate Substances 0.000 description 1
- 235000011285 magnesium acetate Nutrition 0.000 description 1
- 229940069446 magnesium acetate Drugs 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 159000000003 magnesium salts Chemical class 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- MFUVDXOKPBAHMC-UHFFFAOYSA-N magnesium;dinitrate;hexahydrate Chemical class O.O.O.O.O.O.[Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MFUVDXOKPBAHMC-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012702 metal oxide precursor Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000012056 semi-solid material Substances 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000375 suspending agent Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Abstract
Description
式中、「i」が、境界ピクセル(x、y)の対のインデックスであり、(X、Y)が、分岐端点である。所与の粒の曲率半径の全てを平均して、粒平均曲率半径を得てもよく、粒平均曲率半径を平均して、バッチでの平均曲率半径を得てもよい。
実施形態
本体の外表面に隣接し、第1のドーパント含有量を有する濃縮領域、
本体の中央領域にあり、濃縮領域とは異なる、ドーピング領域であって、第2のドーパント含有量を有する、ドーピング領域、および
濃縮領域とドーピング領域との間の枯渇領域であって、0.04%/nm超のドーパントの正規化含有量の減少を定義する、枯渇領域、を画定する、研磨微粒子。
本体の外表面に隣接し、第1のドーパント含有量を有する濃縮領域、
本体の中央領域にあり、濃縮領域とは異なる、ドーピング領域であって、第2のドーパント含有量を有する、ドーピング領域、および
濃縮領域とドーピング領域との間の枯渇領域であって、0.04%/nm超のドーパントの正規化含有量の減少を定義する、枯渇領域、を画定する、実施形態1に記載の研磨微粒子。
微粒子前駆体を粉砕することと、
微粒子前駆体を含浸することと、
濃縮プロセスを行い、本体のドーピング領域と比較して、研磨微粒子の本体の濃縮領域においてより高い濃度でドーパントを選択的に堆積させることであって、ドーピング領域が、本体の中央領域と関連する、選択的に堆積させることと、を含む、方法。
本体の外表面に隣接し、第1のドーパント含有量を有する濃縮領域、
本体の中央領域にあり、濃縮領域とは異なる、ドーピング領域であって、第2のドーパント含有量を有する、ドーピング領域、および
濃縮領域とドーピング領域との間の枯渇領域であって、0.04%/nm超のドーパントの正規化含有量の減少を定義する、枯渇領域、を画定する、実施形態54に記載の方法。
a)本体の総重量に対して少なくとも60重量%のアルミナかつ99重量%以下のアルミナ、
b)酸化物を含み、少なくとも0.01マイクロメートルかつ100マイクロメートル以下の平均粒度を有する第1の相の結晶子、
c)5000マイクロメートル以下かつ少なくとも0.1マイクロメートルの平均粒径、
d)本体の総体積に対して5体積%以下の気孔性、
e)ハフニウム、ジルコニウム、ニオビウム、タンタル、モリブデン、バナジウム、リチウム、ナトリウム、カリウム、マグネシウム、カルシウム、ストロンチウム、バリウム、スカンジウム、イットリウム、ランタン、セシウム、プラセオジム、クロム、コバルト、鉄、ゲルマニウム、マンガン、ニッケル、チタン、亜鉛、セリウム、ネオジム、ガドリニウム、ユウロピウム、ケイ素、リン、またはそれらの任意の組み合わせからなる群から選択される元素を含むドーパント、
f)酸化物の結晶粒間の結晶粒界に最初に位置するドーパント、
g)本体の総重量に対して少なくとも0.5重量%かつ18重量%以下のドーパント、
h)本体が、爆発研磨粒子であること、
i)115マイクロメートル以下の平均曲率半径、
j)成形された研磨粒子、および
k)それらの任意の組み合わせ、のうちの少なくとも1つを含む、実施形態54に記載の方法。
以下の手順に従って、研磨微粒子(試料S1)の第1の試料を作製した。US6,083,622の教示に従って、爆破粉砕したが、焼結していないアルミナ前駆体微粒子を作製した。
実施例1の試料S1と同じ原材料を使用して、別の試料S2を形成した。試料2もまた、濃縮プロセスを施した。濃縮プロセスの後に、約1250℃の温度で実施例S2を焼結した。試料S2のMgOドーパント平均総含有量は、研磨微粒子の総重量に基づいて約8重量%であった。
比較試料CS1は、市販の、従来通りMg−塩を含浸し焼結したアルミナ研磨微粒子材料(3MからのCubitron II)であった。
Claims (15)
- 本体と、前記本体に含有されるドーパントと、を含む研磨微粒子であって、前記ドーパントが、前記本体全体にわたって不均質に分布され、前記本体が、少なくとも35%の最大正規化ドーパント含有量の差を含む、研磨微粒子。
- 本体と、前記本体に含有されるドーパントと、を含む研磨微粒子であって、前記ドーパントが、前記本体全体にわたって不均質に分布され、前記本体の以下の領域:
前記本体の外表面に隣接し、第1のドーパント含有量を有する濃縮領域、
前記本体の中央領域にあり、前記濃縮領域とは異なる、ドーピング領域であって、第2のドーパント含有量を有するドーピング領域、および
前記濃縮領域とドーピング領域との間の枯渇領域であって、少なくとも0.04%/nmの前記ドーパントの前記正規化含有量の減少を定義する枯渇領域、を画定する、研磨微粒子。 - 前記本体が、少なくとも35%の最大正規化ドーパント含有量の差を含む、請求項2に記載の研磨微粒子。
- 前記枯渇領域におけるドーパント含有量の変化が、前記濃縮領域におけるドーパント含有量の変化または前記ドーピング領域におけるドーパント含有量の変化よりも大きい、請求項2または3のいずれか一項に記載の研磨微粒子。
- 前記枯渇領域における前記ドーパントの正規化含有量の前記減少が、前記ドーピング領域における前記正規化ドーパント含有量の減少の少なくとも3倍大きい、請求項2または3のいずれか一項に記載の研磨微粒子。
- 前記濃縮領域が、前記本体の前記外表面から前記本体の中央点に向かって、前記本体内部に向かって、500nm以下延在する、請求項2または3のいずれか一項に記載の研磨微粒子。
- 前記ドーピング領域が、前記本体で前記濃縮領域よりも長く延在する、請求項2または3のいずれか一項に記載の研磨微粒子。
- 前記ドーピング領域が、前記本体で前記枯渇領域よりも長く延在し、前記ドーピング領域における前記ドーパントの前記正規化ドーパント含有量の減少が、0.03%/nm以下である、請求項2または3のいずれか一項に記載の研磨微粒子。
- 前記ドーピング領域が、前記本体で少なくとも2000nmの長さで延在する、請求項2または3のいずれか一項に記載の研磨微粒子。
- 前記本体が、本質的にアルファアルミナおよび前記ドーパントからなる、請求項1、2、または3のいずれか一項に記載の研磨微粒子。
- 前記ドーパントが、本質的にマグネシウムまたは酸化マグネシウムからなる、請求項10に記載の研磨微粒子。
- 前記本体が、前記本体の総重量に基づいて少なくとも1重量%のドーパントかつ14重量%以下のドーパントを含む、請求項1、2、または3のいずれか一項に記載の研磨微粒子。
- 前記本体が、前記本体の総重量に基づいて少なくとも4重量%のドーパントを含む、請求項12に記載の研磨微粒子。
- 前記本体が、爆発研磨粒子であり、115マイクロメートル以下の曲率半径を有する、請求項1、2、または3のいずれか一項に記載の研磨微粒子。
- 本体を含む研磨微粒子を形成する方法であって、
微粒子前駆体を粉砕することと、
前記微粒子前駆体を含浸することと、
濃縮プロセスを行い、前記本体のドーピング領域と比較して、前記研磨微粒子の前記本体の濃縮領域においてより高い濃度でドーパントを選択的に堆積させることであって、前記ドーピング領域が、前記本体の中央領域と関連し、前記本体が、少なくとも35%の最大正規化ドーパント含有量の差を含む、選択的に堆積させることと、を含む、方法。
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JP2021507498A Ceased JP2021534280A (ja) | 2018-08-10 | 2019-08-08 | 微粒子材料およびそれを形成する方法 |
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US (1) | US11674066B2 (ja) |
EP (1) | EP3833724A4 (ja) |
JP (1) | JP2021534280A (ja) |
KR (1) | KR102615833B1 (ja) |
CN (1) | CN112566998B (ja) |
BR (1) | BR112021002575A2 (ja) |
CA (1) | CA3108881C (ja) |
MX (1) | MX2021001466A (ja) |
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2019
- 2019-08-08 CA CA3108881A patent/CA3108881C/en active Active
- 2019-08-08 CN CN201980053151.4A patent/CN112566998B/zh active Active
- 2019-08-08 TW TW108128168A patent/TWI719580B/zh active
- 2019-08-08 WO PCT/US2019/045779 patent/WO2020033746A1/en unknown
- 2019-08-08 EP EP19846378.8A patent/EP3833724A4/en not_active Withdrawn
- 2019-08-08 US US16/536,157 patent/US11674066B2/en active Active
- 2019-08-08 MX MX2021001466A patent/MX2021001466A/es unknown
- 2019-08-08 BR BR112021002575-8A patent/BR112021002575A2/pt active Search and Examination
- 2019-08-08 JP JP2021507498A patent/JP2021534280A/ja not_active Ceased
- 2019-08-08 KR KR1020217007273A patent/KR102615833B1/ko active IP Right Grant
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CA3108881C (en) | 2023-12-05 |
KR20210032002A (ko) | 2021-03-23 |
MX2021001466A (es) | 2021-07-15 |
EP3833724A1 (en) | 2021-06-16 |
TW202024287A (zh) | 2020-07-01 |
US11674066B2 (en) | 2023-06-13 |
CN112566998A (zh) | 2021-03-26 |
TWI719580B (zh) | 2021-02-21 |
US20200048517A1 (en) | 2020-02-13 |
KR102615833B1 (ko) | 2023-12-21 |
CA3108881A1 (en) | 2020-02-13 |
BR112021002575A2 (pt) | 2021-05-11 |
WO2020033746A1 (en) | 2020-02-13 |
EP3833724A4 (en) | 2022-05-11 |
CN112566998B (zh) | 2022-10-18 |
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