JP2021528249A5 - - Google Patents

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Publication number
JP2021528249A5
JP2021528249A5 JP2020544023A JP2020544023A JP2021528249A5 JP 2021528249 A5 JP2021528249 A5 JP 2021528249A5 JP 2020544023 A JP2020544023 A JP 2020544023A JP 2020544023 A JP2020544023 A JP 2020544023A JP 2021528249 A5 JP2021528249 A5 JP 2021528249A5
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Japan
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stack
less
cut line
substrate
laser
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JP2020544023A
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English (en)
Japanese (ja)
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JP2021528249A (ja
JP7424641B2 (ja
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Priority claimed from GB1805624.2A external-priority patent/GB2572608A/en
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JP2020544023A 2018-04-03 2019-04-02 薄膜構造のレーザー処理方法 Active JP7424641B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1805624.2A GB2572608A (en) 2018-04-03 2018-04-03 Laser processing method for thin film structures
GB1805624.2 2018-04-03
PCT/GB2019/050953 WO2019193330A1 (en) 2018-04-03 2019-04-02 Laser processing method for thin film structures

Publications (3)

Publication Number Publication Date
JP2021528249A JP2021528249A (ja) 2021-10-21
JP2021528249A5 true JP2021528249A5 (enExample) 2022-04-08
JP7424641B2 JP7424641B2 (ja) 2024-01-30

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JP2020544023A Active JP7424641B2 (ja) 2018-04-03 2019-04-02 薄膜構造のレーザー処理方法

Country Status (7)

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US (1) US12109651B2 (enExample)
EP (1) EP3774161A1 (enExample)
JP (1) JP7424641B2 (enExample)
KR (1) KR102832158B1 (enExample)
CN (1) CN112135707A (enExample)
GB (1) GB2572608A (enExample)
WO (1) WO2019193330A1 (enExample)

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KR102759257B1 (ko) * 2023-01-06 2025-01-23 주식회사 에스에프에이 기판 레이저 커팅 장치 및 기판 레이저 커팅 방법
KR102926416B1 (ko) * 2023-02-16 2026-02-11 국립공주대학교 산학협력단 비전도성 패턴을 포함하는 이온교환막의 제조방법 및 이에 의해 제조된 이온교환막
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DE102024207809B3 (de) * 2024-08-15 2025-12-11 Volkswagen Aktiengesellschaft Verfahren zum Trennen einer Stoffschlussverbindung zwischen einem Zellverbinder und einer Batteriezelle
CN119407482B (zh) * 2024-11-02 2026-07-17 北京工业大学 一种基于飞秒激光的镁电极表面加工方法
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