JP2021522587A - ガスのパルスに基づく共用前駆体分配システム及び使用方法 - Google Patents
ガスのパルスに基づく共用前駆体分配システム及び使用方法 Download PDFInfo
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- JP2021522587A JP2021522587A JP2020559508A JP2020559508A JP2021522587A JP 2021522587 A JP2021522587 A JP 2021522587A JP 2020559508 A JP2020559508 A JP 2020559508A JP 2020559508 A JP2020559508 A JP 2020559508A JP 2021522587 A JP2021522587 A JP 2021522587A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/06—Control of flow characterised by the use of electric means
- G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
- G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
- G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
- G05D7/0641—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
- G05D7/0652—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means the plurality of throttling means being arranged in parallel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D7/00—Control of flow
- G05D7/06—Control of flow characterised by the use of electric means
- G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
- G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
- G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
- G05D7/0641—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
- G05D7/0664—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means the plurality of throttling means being arranged for the control of a plurality of diverging flows from a single flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
- G01F25/10—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters
- G01F25/17—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume of flowmeters using calibrated reservoirs
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Flow Control (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
【選択図】図1
Description
Claims (15)
- 一つの上流端と複数の下流端とを有する共有容積、
前記共有容積に接続された圧力計、
前記共有容積の前記上流端に接続された圧力コントローラ、及び
前記共有容積の前記下流端の各々における流量コントローラであって、各流量コントローラがオリフィスと高速パルス弁とを含む、前記流量コントローラと
を備えるガス分配装置。 - 前記共有容積が、ガスリザーバ、前記ガスリザーバから前記共有容積の前記複数の下流端への分配ライン、及び前記共有容積の前記上流端から前記ガスリザーバへの分配ラインを含む、請求項1に記載のガス分配装置。
- 前記圧力コントローラが、レギュレータと前記共有容積との間の高速パルス弁を含む、請求項1に記載のガス分配装置。
- 各流量コントローラの下流端に接続された下流のガス導管を更に備える、請求項1に記載のガス分配装置。
- 前記オリフィスが、前記下流端からのガスの流れを制限するリストリクタを含む、請求項4に記載のガス分配装置。
- 前記流量コントローラのいずれかを出て前記下流のガス導管に入るガスの流量が、前記下流のガス導管内の前記オリフィスの下流の圧力と前記オリフィスの上流の圧力との差の関数である、請求項4に記載のガス分配装置。
- 前記オリフィスの上流の前記圧力が、前記共有容積の各下流端について実質的に同じである、請求項6に記載のガス分配装置。
- 各下流のガス導管内の圧力摂動が±2%以下である、請求項4に記載のガス分配装置。
- 前記流量コントローラの前記高速パルス弁が、50ミリ秒で開く又は閉まるように構成されている、請求項1に記載のガス分配装置。
- 前記流量コントローラの前記高速パルス弁が、前記オリフィスの下流にある、請求項1に記載のガス分配装置。
- 前記流量コントローラの前記高速パルス弁が前記オリフィスの上流にある、請求項1に記載のガス分配装置。
- 複数の処理チャンバを含む処理プラットフォームであって、各チャンバが、請求項1に記載のガス分配装置の下流のガス導管を通して前記共有容積の下流端で一つの流量制御装置に接続されている、処理プラットフォーム。
- 高速パルス弁とオリフィスとを含む流量コントローラを較正する方法であって、
共有容積の上流端で圧力コントローラを開いて前記共有容積を加圧することであって、前記共有容積が一つの上流端と複数の下流端とを有し、各下流端が流量コントローラを有する、前記圧力コントローラを開くこと、
前記上流端で前記圧力コントローラを閉じて前記共有容積内の圧力を分離すること、
前記共有容積内の前記圧力を測定すること、
一つの流量コントローラの高速パルス弁を所定回数開くこと、
前記所定回数前記高速パルス弁を開いた後、前記共有容積内の前記圧力を測定すること、及び
前記高速パルス弁のパルスあたりの前記共有容積内の圧力損失を決定すること
を含む方法。 - 各高速パルス弁のパルスあたりに送達されるガスの容積を較正するために、各流量コントローラについて前記方法を繰り返すことを更に含む、請求項13に記載の方法。
- 前記オリフィスと前記高速パルス弁との差を補償するために、前記高速パルス弁のうちの一つ又は複数についてパルスウィンドウを調整することを更に含む、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201862664154P | 2018-04-28 | 2018-04-28 | |
US62/664,154 | 2018-04-28 | ||
PCT/US2019/029282 WO2019210127A1 (en) | 2018-04-28 | 2019-04-26 | Gas-pulsing-based shared precursor distribution system and methods of use |
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JP2021522587A true JP2021522587A (ja) | 2021-08-30 |
JP7144531B2 JP7144531B2 (ja) | 2022-09-29 |
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JP2020559508A Active JP7144531B2 (ja) | 2018-04-28 | 2019-04-26 | ガスのパルスに基づく共用前駆体分配システム及び使用方法 |
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US (2) | US11169547B2 (ja) |
JP (1) | JP7144531B2 (ja) |
KR (1) | KR102443580B1 (ja) |
TW (2) | TWI821281B (ja) |
WO (1) | WO2019210127A1 (ja) |
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US20220262600A1 (en) * | 2021-02-12 | 2022-08-18 | Applied Materials, Inc. | Fast gas exchange apparatus, system, and method |
US11733081B2 (en) * | 2021-04-13 | 2023-08-22 | Applied Materials, Inc. | Methods, systems, and apparatus for conducting a calibration operation for a plurality of mass flow controllers (MFCs) of a substrate processing system |
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2019
- 2019-04-26 TW TW108114619A patent/TWI821281B/zh active
- 2019-04-26 WO PCT/US2019/029282 patent/WO2019210127A1/en active Application Filing
- 2019-04-26 JP JP2020559508A patent/JP7144531B2/ja active Active
- 2019-04-26 KR KR1020207034119A patent/KR102443580B1/ko active IP Right Grant
- 2019-04-26 TW TW112139556A patent/TW202407763A/zh unknown
- 2019-04-27 US US16/396,684 patent/US11169547B2/en active Active
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2021
- 2021-11-08 US US17/521,469 patent/US11520358B2/en active Active
Patent Citations (4)
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KR20070010830A (ko) * | 2005-07-20 | 2007-01-24 | 삼성전자주식회사 | 가스 공급 장치 및 이를 갖는 박막 형성 설비 |
JP2017505383A (ja) * | 2014-01-23 | 2017-02-16 | ウルトラテック インク | 蒸気供給システム |
US20170342562A1 (en) * | 2016-05-31 | 2017-11-30 | Lam Research Corporation | Vapor manifold with integrated vapor concentration sensor |
US20190258279A1 (en) * | 2018-02-22 | 2019-08-22 | Reno Technologies, Inc. | Apparatus for splitting flow of process gas and method of operating same |
Also Published As
Publication number | Publication date |
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TW202407763A (zh) | 2024-02-16 |
US20190332129A1 (en) | 2019-10-31 |
JP7144531B2 (ja) | 2022-09-29 |
KR20200139255A (ko) | 2020-12-11 |
US11169547B2 (en) | 2021-11-09 |
TW202001986A (zh) | 2020-01-01 |
US20220075396A1 (en) | 2022-03-10 |
TWI821281B (zh) | 2023-11-11 |
KR102443580B1 (ko) | 2022-09-16 |
WO2019210127A1 (en) | 2019-10-31 |
US11520358B2 (en) | 2022-12-06 |
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