JP2021190652A - Manufacturing apparatus for electronic component/member cleaning water - Google Patents

Abstract

To provide a manufacturing apparatus for cleaning water for an electronic component/member capable of controlling cleanability of an electronic component/electronic member by adjusting conductivity and oxidation-reduction potential.SOLUTION: An electronic component/member cleaning water manufacturing apparatus 1 comprises a conductivity imparting agent supply device 3 and an oxidation-reduction potential conditioner supply device 4 connected to a supply line 2 of ultrapure water W. A terminal of the ultrapure water supply line 2 becomes a use point UP, and a cooling mechanism 7 is provided on a pre-stage of the use point UP. A conductivity gauge 5 is provided on a post-stage of the conductivity imparting agent supply device 3 in the ultrapure water supply line 2, and an ORP gauge 6 is provided on a post-stage of the oxidation-reduction potential conditioner supply device 4, thereby controlling a supply quantity of a conductivity imparting agent and a supply quantity of an oxidation-reduction potential conditioner on the basis of measurements thereof.SELECTED DRAWING: Figure 1

Description

The present invention relates to an apparatus for producing cleaning water for electronic parts / members used in the field of the electronic industry, etc., and particularly for electronic parts and electronic members whose conductivity and redox potential are prepared by adding ammonia or water peroxide. The present invention relates to an apparatus for producing cleaning water for electronic parts and electronic members whose washability can be controlled.

As cleaning water used for processing electronic parts and electronic members such as semiconductor wafers and semiconductor devices, a solution obtained by adding a conductivity-imparting substance, a redox potential control substance, and a gas to ultrapure water is used. In addition, ultrapure water is used in the rinsing process after cleaning by these, but the higher the purity of ultrapure water, the higher the specific resistance value, so static electricity is likely to be generated during cleaning, and static electricity of the insulating film is likely to occur. It is known that there are problems such as destruction and reattachment of fine particles. Therefore, the pH is adjusted by using a dilute chemical solution in which carbon dioxide gas, ammonia, etc. are dissolved in ultrapure water as rinse water to reduce static electricity and tackle the above-mentioned problems.

By the way, in recent years, when cleaning a wafer, there is an increasing need for cleaning the wafer surface without dissolving a predetermined substance. For this purpose, a specific cleaning chemical solution was prepared according to the wafer material, and cleaning was performed with this cleaning chemical solution.

However, it is expensive to prepare the cleaning chemical solution according to the wafer material, and it is difficult to recover the wastewater containing the cleaning chemical solution and reuse the cleaning chemical solution, and there is a problem that the chemical cost is high. ..

Therefore, it is conceivable to use a mixed solution of ammonia water, hydrogen peroxide solution, and water, which has been conventionally used in RCA cleaning, which is a wet cleaning method for semiconductor substrates, as a cleaning solution. For example, as shown in FIG. 2, the cleaning liquid manufacturing apparatus 11 is an ammonia water supply apparatus 13 as a conductivity-imparting agent connected to a supply line 12 of ultrapure water W via a pipe 13A provided with an on-off valve 13B. And a hydrogen peroxide water supply device 14 as an oxidation-reduction potential adjusting agent connected via a pipe 14A provided with an on-off valve 14B, and the end of the ultrapure water supply line 12 is a use point UP. .. A conductivity meter 15 is provided at the rear stage of the ammonia water supply device 13 of the ultrapure water supply line 12, and an ORP meter 6 is provided at the rear stage of the hydrogen peroxide water supply device 14. It is possible to control the supply amount of ammonia water from the ammonia water supply device 13 and the supply amount of hydrogen peroxide water from the hydrogen peroxide water supply device 14 based on the measured values of.

In such a cleaning liquid manufacturing apparatus 11, ammonia water is added to ultrapure water W to increase the conductivity with the pH on the alkaline side, and hydrogen peroxide water is added to increase the redox potential in the positive direction. Since the basic mechanism is to remove the wafer surface by etching it by a chemical reaction by cleaning the wafer with this alkaline cleaning solution, it is difficult to control the solubility by dissolving only a predetermined material on the wafer surface. There is a problem that it is. As a countermeasure, it is conceivable to adjust a dilute chemical solution, but there is a limit to adjusting the dilute chemical solution, and it is still difficult to control the solubility by dissolving only a predetermined material on the wafer surface as it is. ..

The present invention has been made in view of the above problems, and provides an apparatus for producing cleaning water for electronic components and electronic components, which can adjust the conductivity and redox potential and control the cleaning properties of electronic components and electronic components. The purpose is.

In view of the above object, the present invention comprises adding a conductivity-imparting agent and a redox potential adjusting agent to ultrapure water to produce desired electrical component member washing water having a conductivity and a redox potential, and producing the electrons. An electronic component cleaning water manufacturing device that supplies component cleaning water to use points. The ultrapure water supply line is equipped with a conductivity-imparting agent injection device and a redox potential adjuster injection device, and the conductivity and oxidation Provided is an apparatus for producing washing water for electronic component members, in which a cooling mechanism is provided between the reduction potential adjusting means and the point of use (Invention 1).

According to the present invention (Invention 1), a small amount of a conductivity-imparting agent and an oxidation-reduction potential adjusting agent is added to ultrapure water to prepare cleaning water for electronic component members, and the cleaning water for electronic component members is designated by a cooling mechanism. By cooling to a temperature and supplying it to the point of use, it is possible to reduce the activity of the electronic component cleaning water and suppress the melting of the electronic component such as a wafer. Moreover, by using a dilute solution in which a small amount of a conductivity-imparting agent and a redox potential adjusting agent is added, it is possible to control the solubility by dissolving only a predetermined material on the surface of an electronic component member such as a wafer.

In the above invention (Invention 1), it is preferable that the conductivity-imparting agent is ammonia or carbonic acid (Invention 2).

According to the present invention (Invention 2), the liquid property can be adjusted to alkaline or acidic while imparting conductivity to the electronic component member cleaning water, and by further adjusting the concentration thereof, the electronic component member cleaning water can be adjusted. The pH can be adjusted.

In the above invention (invention 1), the redox potential modifiers, aqueous hydrogen peroxide is preferably _{O 3} or _{H 2} (invention 3).

According to such inventions (Inventions 2 and 3), the redox potential of the electronic component cleaning water can be adjusted positively or negatively, and the redox potential of the electronic component cleaning water can be adjusted by adjusting the concentration thereof. Can be adjusted.

In the above inventions (Inventions 1 to 3), it is preferable that the cooling mechanism can supply the electronic component member cleaning water to the use point at 20 ° C. or lower (Invention 4).

According to the present invention (Invention 4), a wafer or the like is supplied by adding a small amount of a conductivity-imparting agent and an oxidation-reduction potential adjusting agent to ultrapure water and supplying cleaning water for electronic components cooled to 20 ° C. or lower as a point of use. It is possible to effectively suppress the melting of electronic component members.

In the above inventions (Inventions 1 to 4), the ultrapure water supply line is provided with a conductivity meter or a resistivity meter on the downstream side of the conductivity-imparting agent injection device, and is provided on the downstream side of the redox potential adjuster injection device. Is preferably equipped with a redox agent concentration measuring device or an ORP meter (Invention 5).

According to the present invention (Invention 5), the conductivity and ORP of the washing water of an electronic component member obtained by adding a small amount of a conductivity-imparting agent and a redox potential adjusting agent to ultrapure water are measured, and the conductivity is measured according to the measured values. By controlling the amount of addition from the agent injection device and the redox potential adjuster injection device, the conductivity and redox potential of the electronic component cleaning water can be adjusted, and the dissolution of electronic component such as wafers is more effective. Can be suppressed.

According to the electronic component cleaning water manufacturing apparatus of the present invention, the electronic component cleaning water obtained by adding a small amount of a conductivity-imparting agent and an oxidation-reduction potential adjusting agent to ultrapure water is cooled to a predetermined temperature by a cooling mechanism for use. By supplying the points, it is possible to perform cleaning while suppressing the melting of electronic component members such as wafers. Moreover, by using a dilute solution in which a small amount of a conductivity-imparting agent and a redox potential adjusting agent is added, it is possible to control the solubility by dissolving only a predetermined material on the surface of an electronic component member such as a wafer.

It is a schematic diagram which shows the manufacturing apparatus of the electronic component member washing water by one Embodiment of this invention. It is a schematic diagram which shows the manufacturing apparatus of the conventional electronic component member washing water.

Hereinafter, the first embodiment of the electronic component member washing water manufacturing apparatus of the present invention will be described in detail with reference to the accompanying drawings.

[Manufacturing equipment for cleaning water for electronic components]
FIG. 1 shows an apparatus for producing electronic component member cleaning water (hereinafter, may be simply referred to as wash water) according to an embodiment. In FIG. 1, the electronic component member wash water production apparatus 1 is made of ultrapure water W. A conductivity-imparting agent supply device 3 connected to the supply line 2 via a pipe 3A provided with an on-off valve 3B, and an oxidation-reduction potential adjusting agent supply device 4 connected via a pipe 4A provided with an on-off valve 4B. To prepare for. The end of the ultrapure water supply line 2 is a use point UP, and a cooling mechanism 7 is provided in front of the use point UP. In the present embodiment, the conductivity meter 5 is provided at the rear stage of the conductivity-imparting agent supply device 3 of the ultrapure water supply line 2, and the ORP is provided at the rear stage of the oxidation-reduction potential adjuster supply device 4. A total of 6 is provided, and based on these measured values, the supply amount of the conductivity-imparting agent from the conductivity-imparting agent supply device 3 and the supply of the oxidation-reduction potential adjuster from the oxidation-reduction potential adjuster supply device 4. The amount can be controlled by a control mechanism (not shown).

Here, the cooling mechanism 7 is called a chiller, and in the present embodiment, at the use point UP, the cleaning water W1 of the electronic component member is 20 ° C. or less, for example, 10 to 10 with respect to the flow rate of the ultrapure water W at room temperature. It is preferable that it has a capacity that can be supplied at 20 ° C.

<Ultrapure water>
In the present embodiment, the ultrapure water W as raw water is, for example, resistivity: 18.1 MΩ · cm or more, fine particles: 1000 cells / L or less with a particle size of 50 nm or more, viable bacteria: 1 cell / L or less, TOC. (Total Organic Carbon): 1 μg / L or less, total silicon: 0.1 μg / L or less, metals: 1 ng / L or less, ions: 10 ng / L or less, hydrogen peroxide; 30 μg / L or less, water temperature: 25 ± The one at 2 ° C. is preferable.

<Conductivity imparting agent>
In the present embodiment, the conductivity-imparting agent means a substance that generates ions (anions or cations) by dissolving in ultrapure water W, which is raw material water, and imparts conductivity to ultrapure water W by the ions. do. As such a conductivity-imparting substance, a liquid such as hydrochloric acid, nitric acid, sulfuric acid, acetic acid, or a gas body such as _{CO 2 gas can be used as the acid-imparting substance.} Ammonia, sodium hydroxide, potassium hydroxide, TMAH, or the like can be used as the alkali-imparting agent, but when used for cleaning semiconductor wafers, ammonia, CO ₂ (dissolved water) can be used. May be good), and ammonia is particularly preferable. This ammonia is preferably used as ammonia water having a predetermined concentration. These conductivity-imparting agents may be appropriately selected according to the desired liquid properties such as the pH of the cleaning liquid.

<Redox potential adjuster>
In the present embodiment, the redox potential adjuster means a substance that changes the redox potential by dissolving it in ultrapure water W, which is the raw material water, to impart oxidative or reducing properties. The redox potential adjusting agent is not particularly limited, but potassium ferricyanide, potassium ferrocyanide, and the like are not preferable because they contain a metal component. Therefore, when adjusting the redox potential to a high level, a liquid such as hydrogen peroxide solution or a gas body such as ozone gas or oxygen gas can be used. Further, when adjusting the redox potential to a low level, it is preferable to use a liquid such as oxalic acid, hydrogen sulfide or potassium iodide or a gas body such as hydrogen. When used for cleaning semiconductor wafers, a liquid such as hydrogen peroxide solution or a gas body such as ozone gas or hydrogen gas (which may be dissolved water) is preferable, and the redox potential is relatively easy to control. Therefore, it is preferable to use a hydrogen peroxide solution. These redox potential adjusting agents may be selected according to desired liquid properties such as positive or negative of the redox potential of the cleaning liquid.

[Manufacturing method of washing water for electronic parts]
Next, a method of manufacturing electronic component cleaning water using the electronic component cleaning water manufacturing apparatus of the present embodiment having the above-described configuration will be described.

<Conductivity imparting process>
First, when the ultrapure water W is supplied from the supply line 2, the necessary conductivity-imparting agent is imparted based on the concentration of the conductivity-imparting agent having the conductivity set from the flow rate of the ultrapure water W. Add from the agent supply device 3. At this time, the conductivity of the ultrapure water W after the addition of the conductivity-imparting agent is measured by the conductivity meter 5 provided in the supply line 2, and the amount of the conductivity-imparting agent added is adjusted so as to have the set conductivity. It is preferable to adjust.

It is preferable that the conductivity of the ultrapure water W is 5 μS / cm or less by the conductivity imparting step as described above. If the conductivity of ultrapure water W exceeds 5 μS / cm, the effect of suppressing cleaning of the wafer surface is not sufficient. Therefore, the conductivity-imparting agent may be added in a very small amount.

<Redox potential adjustment process>
Next, a necessary redox potential adjuster is added from the redox potential adjuster supply device 4 based on the concentration of the redox potential adjuster that becomes the redox potential set from the flow rate of the ultrapure water W. At this time, the redox potential of the ultrapure water W after the addition of the redox potential adjuster is measured by the ORP meter 6 provided in the supply line 2, and the redox potential adjuster is adjusted so as to have the set redox potential. It is preferable to adjust the addition amount.

In the redox potential adjusting step as described above, if the redox potential of the ultrapure water W is made too large, the effect of suppressing cleaning of the wafer surface is not sufficient. Therefore, the redox potential is reduced to less than ± 10 V. It is preferable to dissolve the potential adjuster very dilutely. In the present embodiment using ultrapure water W as raw water, specifically, when the redox potential adjusting agent is hydrogen peroxide, the concentration is preferably 50 ppm or less, particularly 10 ppm or less, and the redox potential is adjusted. When the agent is ozone (O ₃ ), the concentration is preferably 10 ppm or less, particularly 5 ppm or less, and when the redox potential adjuster is hydrogen (H ₃ ), the concentration is 1 ppm or less, particularly 0.5 ppm or less. Is preferable.

<Cooling process>
The cleaning water W1 in which the ultrapure water W is adjusted to the desired conductivity and oxidation-reduction potential has high activity, and it is difficult to control the solubility such as selectively dissolving only a predetermined material on the wafer surface. be. Therefore, it is preferable that the washing water W1 is supplied to the use point UP at 20 ° C. or lower. Therefore, it is preferable to cool the washing water W1 to 0 ° C. or higher and lower than 20 ° C. by the cooling mechanism 7. Therefore, it is preferable to measure the temperature of the washing water W1 at the outlet of the cooling mechanism 7 and adjust the temperature to a desired level by controlling the cooling capacity of the cooling mechanism 7.

In the cooling step, a chiller unit having a plurality of chillers connected in parallel is used as the cooling mechanism 7, and the operating state of the plurality of chillers is switched according to the degree of deterioration of the cooling function of each chiller. You may go. Since the chiller to be used can be selected by switching the operating state of a plurality of chillers, for example, even if there is a chiller whose cooling function is deteriorated due to the generation of microorganisms, the operation of the entire chiller unit is not stopped. It can be continued, and the production efficiency of the cooled washing water W1 is improved.

As described above, according to the electronic component member cleaning water manufacturing apparatus of the present embodiment, the low temperature cleaning water W1 obtained by cooling the wafer cleaning water W1 to a predetermined temperature, particularly to a temperature of 0 ° C. or higher and lower than 20 ° C. is used. As a result, the activity of the washing water W1 is lowered, so that the solubility of the washing water 1 can be controlled by dissolving only a predetermined material on the surface of the wafer. In particular, according to the present embodiment, the solubility of the washing water 1 is controlled by using a low-concentration conductivity-imparting agent and a redox potential adjuster to dissolve only a predetermined material on the wafer surface. The amount of chemical solution used can be reduced. This also has the effect of facilitating the recovery and reuse of the used solution.

Although the present invention has been described above based on the above-described embodiment with reference to the accompanying drawings, the present invention is not limited to the above-described embodiment, and various modifications can be made. For example, ammonia is generally used as the conductivity-imparting agent and hydrogen peroxide is generally used as the redox potential adjuster, but various conductivity-imparting agents and redox potential adjusters can be combined. .. Further, the ultrapure water W may be cooled and used as a cleaning liquid without adding the conductivity-imparting agent and the redox potential adjuster from the conductivity-imparting agent supply device 3 and the redox potential adjuster supply device 4.

The present invention will be described in more detail with reference to the following specific examples.

[Comparative Example 1]
Using the cleaning liquid manufacturing apparatus shown in FIG. 1 which does not have the cooling mechanism 7, ammonia water (conductivity-imparting agent) is added to the ultrapure water W at room temperature from the conductivity-imparting agent supply device 3 so that the conductivity becomes 100 μS / cm. After the addition, hydrogen peroxide solution (oxidation-reduction potential adjuster) was added from the oxidation-reduction potential adjuster supply device 4 so as to have a concentration of 100 ppm to produce wash water W1. Then, the washing water W1 was sent to the use point to wash the wafer. The liquid temperature of the washing water W1 at the use point was 25 ° C. At this time, a large amount of chemical solution (conductivity-imparting agent + redox potential adjuster) was required, the concentrations of ammonia and hydrogen peroxide solution were high, and it was difficult to recover and reuse the cleaning solution 1. Table 1 shows the adjustment conditions of the washing water W1 and the liquid temperature at the point of use UP.

[Comparative Example 2]
In Comparative Example 1, the washing water W1 was added in the same manner to the ultrapure water W at room temperature except that ammonia (conductivity-imparting agent) water was added from the conductivity-imparting agent supply device 3 so that the conductivity was 1 μS / cm. Manufactured. Then, the washing water W1 was sent to the use point to wash the wafer. The liquid temperature of the washing water W1 at the use point was 25 ° C. At this time, a large amount of chemical solution (conductivity-imparting agent + redox potential adjusting agent) was required, and it was difficult to recover and reuse the cleaning solution 1. Table 1 shows the adjustment conditions of the washing water W1 and the liquid temperature at the point of use UP. Further, the wafer dissolution suppressing effect when the wafer melting suppressing effect of the cleaning liquid W1 of Comparative Example 1 is 100% (the higher the suppressing effect is, the larger it is), the amount of the cleaning liquid W1 used as compared with Comparative Example 1, and the cleaning liquid 1 It is also shown in Table 2 together with the distinction between the judgment of difficulty or ease of recovery and reuse.

[Comparative Example 3]
In Comparative Example 1, ammonia (conductivity-imparting agent) water was added from the conductivity-imparting agent supply device 3 to ultrapure water W at room temperature so that the conductivity was 100 μS / cm, and then the oxidation-reduction potential adjuster was supplied. _{Ozone (O 3} ) (oxidation-reduction potential adjuster) was added from the apparatus 4 to 30 ppm to produce wash water W1. Then, the washing water W1 was sent to the use point to wash the wafer. The liquid temperature of the washing water W1 at the use point was 25 ° C. At this time, a large amount of chemical solution (conductivity-imparting agent + redox potential adjusting agent) was required, and it was difficult to recover and reuse the cleaning solution 1. Table 1 shows the adjustment conditions of the washing water W1 and the liquid temperature at the point of use UP. Further, when the wafer dissolution suppressing effect of the cleaning liquid W1 of Comparative Example 1 is set to 100%, the wafer dissolution suppressing effect, the amount of the cleaning liquid W1 used as compared with Comparative Example 1, and the difficulty or ease of recovery and reuse of the cleaning liquid 1 are judged. It is shown in Table 2 together with the distinction.

[Comparative Example 4]
In Comparative Example 1, ammonia (conductivity-imparting agent) water was added from the conductivity-imparting agent supply device 3 to ultrapure water W at room temperature so that the conductivity was 100 μS / cm, and then the oxidation-reduction potential adjuster was supplied. _{Hydrogen (H 2} ) (oxidation-reduction potential adjuster) was added from the apparatus 4 to 1.2 ppm to produce wash water W1. Then, the washing water W1 was sent to the use point to wash the wafer. The liquid temperature of the washing water W1 at the use point was 25 ° C. At this time, a large amount of chemical solution (conductivity-imparting agent + redox potential adjusting agent) was required, and it was difficult to recover and reuse the cleaning solution 1. Table 1 shows the adjustment conditions of the washing water W1 and the liquid temperature at the point of use UP. Further, when the wafer dissolution suppressing effect of the cleaning liquid W1 of Comparative Example 1 is set to 100%, the wafer dissolution suppressing effect, the amount of the cleaning liquid W1 used as compared with Comparative Example 1, and the difficulty or ease of recovery and reuse of the cleaning liquid 1 are judged. It is shown in Table 2 together with the distinction.

[Comparative Example 5]
_{In Comparative Example 1, CO 2} (conductivity-imparting agent) was added from the conductivity-imparting agent supply device 3 to ultrapure water W at room temperature so that the conductivity was 10 μS / cm, and then the redox potential adjuster was supplied. Washing water W1 was produced by adding hydrogen peroxide solution (oxidation-reduction potential adjuster) from the apparatus 4 so as to have a concentration of 100 ppm. Then, the washing water W1 was sent to the use point to wash the wafer. The liquid temperature of the washing water W1 at the use point was 25 ° C. At this time, a large amount of chemical solution (conductivity-imparting agent + redox potential adjusting agent) was required, and it was difficult to recover and reuse the cleaning solution 1. Table 1 shows the adjustment conditions of the washing water W1 and the liquid temperature at the point of use UP. Further, when the wafer dissolution suppressing effect of the cleaning liquid W1 of Comparative Example 1 is set to 100%, the wafer dissolution suppressing effect, the amount of the cleaning liquid W1 used as compared with Comparative Example 1, and the difficulty or ease of recovery and reuse of the cleaning liquid 1 are judged. It is shown in Table 2 together with the distinction.

[Example 1]
Using the cleaning liquid manufacturing apparatus shown in FIG. 1, ammonia water (conductivity-imparting agent) was added from the conductivity-imparting agent supply device 3 to ultrapure water W at room temperature so that the conductivity was 1 μS / cm, and then Washing water W1 was produced by adding hydrogen peroxide (oxidation-reduction potential adjusting agent) to 5 ppm from the oxidation-reduction potential adjusting agent supply device 4. Then, the washing water W1 was cooled by the cooling mechanism 7 and sent to the use point to wash the wafer. The liquid temperature of the washing water W1 at the use point was 15 ° C. At this time, the amount of the chemical solution (conductivity-imparting agent + redox potential adjuster) used was smaller than that of Comparative Example 1, the concentrations of the ammonia water and the hydrogen peroxide solution were low, and the recovery and reuse of the cleaning solution 1 was compared. It was easy. Table 1 shows the adjustment conditions of the washing water W1 and the liquid temperature at the point of use UP. Further, when the wafer dissolution suppressing effect of the cleaning liquid W1 of Comparative Example 1 is set to 100%, the wafer dissolution suppressing effect, the amount of the cleaning liquid W1 used as compared with Comparative Example 1, and the difficulty or ease of recovery and reuse of the cleaning liquid 1 are judged. It is shown in Table 2 together with the distinction.

[Example 2]
In Example 1, ammonia (conductivity-imparting agent) water is added to ultrapure water W at room temperature from the conductivity-imparting agent supply device 3 so that the conductivity becomes 1 μS / cm, and then the oxidation-reduction potential adjuster is supplied. _{Ozone (O 3} ) (oxidation-reduction potential adjuster) was added from the apparatus 4 to 2 ppm to produce wash water W1. Then, the washing water W1 was cooled by the cooling mechanism 7 and sent to the use point to wash the wafer. The liquid temperature of the washing water W1 at the use point was 15 ° C. At this time, the amount of the chemical solution (conductiveness-imparting agent + redox potential adjuster) used was smaller than that of Comparative Example 1, and the recovery and reuse of the cleaning solution 1 was relatively easy. Table 1 shows the adjustment conditions of the washing water W1 and the liquid temperature at the point of use UP. Further, when the wafer dissolution suppressing effect of the cleaning liquid W1 of Comparative Example 1 is set to 100%, the wafer dissolution suppressing effect, the amount of the cleaning liquid W1 used as compared with Comparative Example 1, and the difficulty or ease of recovery and reuse of the cleaning liquid 1 are judged. It is shown in Table 2 together with the distinction.

[Example 3]
In Example 1, ammonia (conductivity-imparting agent) water is added to ultrapure water W at room temperature from the conductivity-imparting agent supply device 3 so that the conductivity becomes 1 μS / cm, and then the oxidation-reduction potential adjuster is supplied. _{Hydrogen (H 2} ) (oxidation-reduction potential adjuster) was added from the apparatus 4 to 0.2 ppm to produce wash water W1. Then, the washing water W1 was cooled by the cooling mechanism 7 and sent to the use point to wash the wafer. The liquid temperature of the washing water W1 at the use point was 15 ° C. At this time, the amount of the chemical solution (conductiveness-imparting agent + redox potential adjuster) used was smaller than that of Comparative Example 1, and the recovery and reuse of the cleaning solution 1 was relatively easy. Table 1 shows the adjustment conditions of the washing water W1 and the liquid temperature at the point of use UP. Further, when the wafer dissolution suppressing effect of the cleaning liquid W1 of Comparative Example 1 is set to 100%, the wafer dissolution suppressing effect, the amount of the cleaning liquid W1 used as compared with Comparative Example 1, and the difficulty or ease of recovery and reuse of the cleaning liquid 1 are judged. It is shown in Table 2 together with the distinction.

[Example 4]
_{In Example 1, CO 2} (conductivity-imparting agent) is added from the conductivity-imparting agent supply device 3 to ultrapure water W at room temperature so that the conductivity is 1 μS / cm, and then the redox potential adjuster is supplied. Washing water W1 was produced by adding hydrogen peroxide (oxidation-reduction potential adjuster) to 5 ppm from the apparatus 4. Then, the washing water W1 was cooled by the cooling mechanism 7 and sent to the use point to wash the wafer. The liquid temperature of the washing water W1 at the use point was 15 ° C. At this time, the amount of the chemical solution (conductiveness-imparting agent + redox potential adjuster) used was smaller than that of Comparative Example 1, and the recovery and reuse of the cleaning solution 1 was relatively easy. Table 1 shows the adjustment conditions of the washing water W1 and the liquid temperature at the point of use UP. Further, when the wafer dissolution suppressing effect of the cleaning liquid W1 of Comparative Example 1 is set to 100%, the wafer dissolution suppressing effect, the amount of the cleaning liquid W1 used as compared with Comparative Example 1, and the difficulty or ease of recovery and reuse of the cleaning liquid 1 are judged. It is shown in Table 2 together with the distinction.

[Reference Example 1]
In Comparative Example 1, the wafer was washed by sending the ultrapure water W at room temperature as the washing water W1 as it was without adding the conductivity-imparting agent and the redox potential adjusting agent. The liquid temperature of the washing water W1 at the use point was 25 ° C. Table 1 shows the adjustment conditions of the washing water W1 and the liquid temperature at the point of use UP. Further, when the wafer dissolution suppressing effect of the cleaning liquid W1 of Comparative Example 1 is 100%, the wafer melting suppressing effect and the wafer melting suppressing effect are compared with those of Comparative Example 1, and the amount of the cleaning liquid W1 used and the recovery and reuse of the cleaning liquid 1 are used. Table 2 also shows the distinction between difficult or easy judgments.

[Reference Example 2]
In Example 1, the ultrapure water W at room temperature was used as the washing water W1 as it was, and the washing water W1 was cooled by the cooling mechanism 7 and sent to the use point to wash the wafer. The liquid temperature of the washing water W1 at the use point was 20 ° C. Table 1 shows the adjustment conditions of the washing water W1 and the liquid temperature at the point of use UP. Further, when the wafer dissolution suppressing effect of the cleaning liquid W1 of Comparative Example 1 is set to 100%, the wafer dissolution suppressing effect, the amount of the cleaning liquid W1 used as compared with Comparative Example 1, and the difficulty or ease of recovery and reuse of the cleaning liquid 1 are judged. It is shown in Table 2 together with the distinction.

[Reference Example 3]
In Example 1, the ultrapure water W at room temperature was used as the washing water W1 as it was, and the washing water W1 was cooled by the cooling mechanism 7 and sent to the use point to wash the wafer. The liquid temperature of the washing water W1 at the use point was 15 ° C. Table 1 shows the adjustment conditions of the washing water W1 and the liquid temperature at the point of use UP. Further, the wafer dissolution suppressing effect when the wafer dissolution suppressing effect of the cleaning liquid W1 of Comparative Example 1 is 100% (the higher the suppressing effect is, the greater), the amount of the cleaning liquid W1 used as compared with Comparative Example 1, and the recovery of the cleaning liquid 1. Table 2 shows the distinction between difficult or easy reuse.

[Reference example 4]
In Example 1, the ultrapure water W at room temperature was used as the washing water W1 as it was, and the washing water W1 was cooled by the cooling mechanism 7 and sent to the use point to wash the wafer. The liquid temperature of the washing water W1 at the use point was 10 ° C. Table 1 shows the adjustment conditions of the washing water W1 and the liquid temperature at the point of use UP. Further, when the wafer dissolution suppressing effect of the cleaning liquid W1 of Comparative Example 1 is set to 100%, the wafer dissolution suppressing effect, the amount of the cleaning liquid W1 used as compared with Comparative Example 1, and the difficulty or ease of recovery and reuse of the cleaning liquid 1 are judged. It is shown in Table 2 together with the distinction.

As is clear from Tables 1 and 2, the washing water W1 of Examples 1 to 4 cooled to 15 ° C. has a higher effect of suppressing dissolution of the wafer as compared with the case of washing the washing water W1 wafer at 25 ° C. Since the amount of the chemical solution used was small and the solution was a dilute solution, recovery was relatively easy. Further, as is clear from Reference Examples 1 to 4, even when ultrapure water W as a raw material water is used as cleaning water, Reference Example 1 having a temperature of 25 ° C. has a low effect of suppressing wafer melting. Since the effect of suppressing the melting of the wafer increases as the temperature is lowered, it can be seen that the effect of suppressing the melting of the wafer can be adjusted by adjusting the temperature of the washing water W1.

1 Electronic component cleaning water production equipment 2 Supply line 3 Conductivity imparting agent supply device 3A Piping 3B On-off valve 4 Redox potential regulator supply device 4A Piping 4B On-off valve 5 Conductivity meter 6 ORP total 7 Cooling mechanism W Ultrapure water W1 wash water UP use point

Claims (5)

A conductivity-imparting agent and an oxidation-reduction potential adjuster are added to ultrapure water to produce desired electrical component cleaning water with conductivity and oxidation-reduction potential, and this electronic component cleaning water is supplied to use points. It is a manufacturing device for cleaning water for electronic parts and parts.
The ultrapure water supply line is equipped with a conductivity-imparting agent injection device and a redox potential adjuster injection device.
An apparatus for producing washing water for electronic component members, provided with a cooling mechanism between the conductive and redox potential adjusting means and a point of use. The apparatus for producing washing water for electronic components according to claim 1, wherein the conductivity-imparting agent is ammonia or carbonic acid. The redox potential modifiers, aqueous hydrogen peroxide, an O ₃ or H _2, the electronic component member cleaning water production apparatus according to claim 1 or 2. The apparatus for producing electronic component cleaning water according to any one of claims 1 to 3, wherein the cooling mechanism can supply electronic component cleaning water to a use point at 20 ° C. or lower. The ultrapure water supply line is equipped with a conductivity meter or a specific resistance meter on the downstream side of the conductivity-imparting agent injection device, and a redox agent concentration measuring device or an ORP meter is provided on the downstream side of the redox potential adjusting agent injection device. The apparatus for producing cleaning water for electronic component members according to any one of claims 1 to 4.

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