JP2021158267A - レーザ装置 - Google Patents
レーザ装置 Download PDFInfo
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- JP2021158267A JP2021158267A JP2020058450A JP2020058450A JP2021158267A JP 2021158267 A JP2021158267 A JP 2021158267A JP 2020058450 A JP2020058450 A JP 2020058450A JP 2020058450 A JP2020058450 A JP 2020058450A JP 2021158267 A JP2021158267 A JP 2021158267A
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- 230000035945 sensitivity Effects 0.000 claims abstract description 45
- 230000003287 optical effect Effects 0.000 claims abstract description 34
- 238000001514 detection method Methods 0.000 claims abstract description 21
- 238000001228 spectrum Methods 0.000 claims abstract description 6
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 19
- 230000000694 effects Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 230000007423 decrease Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 239000004744 fabric Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06213—Amplitude modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06226—Modulation at ultra-high frequencies
- H01S5/0623—Modulation at ultra-high frequencies using the beating between two closely spaced optical frequencies, i.e. heterodyne mixing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06246—Controlling other output parameters than intensity or frequency controlling the phase
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
第1実施形態について説明する。本実施形態のレーザ装置は、例えば、車両に搭載されて、車両と周囲の物体との距離を測定するLiDAR(Light Detection and Ranging)に用いられる。ここでは、LiDARにおいてFMCW(Frequency Modulated Continuous Wave)方式で物体との距離を測定する場合について説明する。
第2実施形態について説明する。本実施形態は、第1実施形態に対して変調量検出部50の構成を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
第3実施形態について説明する。本実施形態は、第2実施形態に対して光源10の構成を変更したものであり、その他については第2実施形態と同様であるため、第2実施形態と異なる部分についてのみ説明する。
第4実施形態について説明する。本実施形態は、第1実施形態に対して変調量検出部50の構成を変更したものであり、その他については第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
なお、本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。
11 利得媒体
12 反射部
13 反射部
14 変調部
20 光負帰還部
21 リングフィルタ
22 ループミラー
23 位相調整部
30 変調信号生成部
40 加算器
50 変調量検出部
51 ビート信号生成部
52 PD(フォトダイオード)
53 比較器
54 参照信号生成部
55 リングフィルタ
56 PD(フォトダイオード)
57 参照光源
58 合波器
59 PD(フォトダイオード)
60 変調感度算出部
70 判定部
80 制御部
Claims (7)
- レーザ光を発生させる光源(10)と、
光負帰還によって前記レーザ光のスペクトルを狭線化する光負帰還部(20)と、を備えるレーザ装置であって、
前記光源に変調信号を入力して前記レーザ光の周波数を変調する周波数変調部(30、40)と、
前記レーザ光の周波数の変調量を検出する変調量検出部(50)と、
前記変調信号の強度および前記変調量から変調感度を算出する変調感度算出部(60)と、を備えるレーザ装置。 - 前記変調量検出部および前記変調感度算出部は、前記レーザ光の自己遅延ヘテロダインによって生成されたビート信号に基づいて、前記変調量の検出および前記変調感度の算出を行う請求項1に記載のレーザ装置。
- 前記変調量検出部は、リングフィルタ(55)を透過する光の強度に基づいて前記変調量を検出する請求項1に記載のレーザ装置。
- 前記変調量検出部は、前記レーザ光と参照光との合波によって生成されたビート信号の周波数変化から前記変調量を検出する請求項1に記載のレーザ装置。
- 前記変調感度に基づいて狭線化の状態を判定する判定部(70)を備える請求項1ないし4のいずれか1つに記載のレーザ装置。
- 前記判定部の判定結果に応じて前記光負帰還部を制御する制御部(80)を備える請求項5に記載のレーザ装置。
- 前記制御部は、前記変調量と前記変調感度との関係に基づいて、前記光負帰還部の結合位相を制御する請求項6に記載のレーザ装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020058450A JP2021158267A (ja) | 2020-03-27 | 2020-03-27 | レーザ装置 |
US17/210,098 US11539185B2 (en) | 2020-03-27 | 2021-03-23 | Laser apparatus |
Applications Claiming Priority (1)
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---|---|---|---|
JP2020058450A JP2021158267A (ja) | 2020-03-27 | 2020-03-27 | レーザ装置 |
Publications (1)
Publication Number | Publication Date |
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JP2021158267A true JP2021158267A (ja) | 2021-10-07 |
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Family Applications (1)
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JP2020058450A Pending JP2021158267A (ja) | 2020-03-27 | 2020-03-27 | レーザ装置 |
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US (1) | US11539185B2 (ja) |
JP (1) | JP2021158267A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023084711A1 (ja) * | 2021-11-11 | 2023-05-19 | 日本電気株式会社 | 光モジュール、光システム及び光出力方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001284707A (ja) | 2000-03-31 | 2001-10-12 | Anritsu Corp | 半導体レーザ光源装置及び光周波数領域反射測定装置 |
US6763042B2 (en) * | 2001-12-14 | 2004-07-13 | Evans & Sutherland Computer Corporation | Apparatus and method for frequency conversion and mixing of laser light |
TWI290640B (en) * | 2004-06-16 | 2007-12-01 | Mediatek Inc | Laser power controller and method for performing an auto power control |
JP2012033807A (ja) | 2010-08-02 | 2012-02-16 | Nec Corp | 半導体レーザ |
JP2012114163A (ja) | 2010-11-22 | 2012-06-14 | Nec Corp | 光ファイバ通信用波長可変半導体レーザ光源 |
JP2012256667A (ja) | 2011-06-08 | 2012-12-27 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザ光源 |
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2020
- 2020-03-27 JP JP2020058450A patent/JP2021158267A/ja active Pending
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2021
- 2021-03-23 US US17/210,098 patent/US11539185B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023084711A1 (ja) * | 2021-11-11 | 2023-05-19 | 日本電気株式会社 | 光モジュール、光システム及び光出力方法 |
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Publication number | Publication date |
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US11539185B2 (en) | 2022-12-27 |
US20210305778A1 (en) | 2021-09-30 |
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