JP2021153165A - Device and method for sintering electronic component - Google Patents

Abstract

To provide an electronic component sintering device and a method, which can efficiently join electronic components with high heat resistance at a low temperature by a sintering method, using a bonding material of nano-silver paste etc. in which silver nanoparticles having high thermal conductivity are used.SOLUTION: An electronic component 11, on which sintering treatment is performed in a sintering press unit 4, is conveyed together with a tray 12 from the sintering press unit 4 to a cooling unit 5 by a second conveyance unit 8 having a first inert gas supply path through which an inert gas is supplied. At this time, the electronic component 11 is conveyed from the sintering press unit 4 to the cooling unit 5 in a state that the electronic component 11 in the tray 12 is covered with the inert gas which is supplied through the first inert gas supply path. The cooling unit 5 sandwiches, together with the tray 12, the electronic component 11 conveyed by the second conveyance unit 8 between with the second conveyance unit 8, to cool the electronic component 11 in the tray 12 in a state of being covered with the inert gas.SELECTED DRAWING: Figure 1

Description

The present invention relates to a sintering apparatus and method for electronic components in which electronic components are bonded by sintering (sintering method) using a bonding material such as silver nanopaste.

In electric devices such as air conditioners, elevators, hybrid vehicles and electric vehicles, the power supply voltage and the drive voltage are often different. Therefore, these electric devices are equipped with power conversion devices such as inverters and converters. Among these, a device that converts electric power using a power semiconductor is called a power module. Generally, power semiconductors are solder-bonded to an insulating substrate.

As a method of soldering a power semiconductor to an insulating substrate, for example, in Patent Document 1, in automatic assembly of a semiconductor device such as an intelligent power module, a circuit assembly in which a power circuit and a control circuit block are mounted on a metal base plate in advance is provided. During the transfer to the main chamber, the joint surface is preheated to a temperature 30 to 50 ° C higher than the solder melting point, and the terminal-integrated outer resin case is docked on this preheated circuit assembly. It is described that the external lead-out terminal and the main circuit, the control circuit block are soldered, and the resin case and the metal base plate are bonded at the same time in this state.

Japanese Unexamined Patent Publication No. 10-233484

In a power semiconductor, a current of about 50 A to several hundred A, which is equivalent to that of several households, flows per small chip of about 10 mm square, so that a large amount of heat is generated from the chip during operation. The upper limit of the operating temperature of the current Si power semiconductor is about 175 ° C. In order not to exceed this temperature, the heat generated from the chip needs to be quickly discharged from the back surface of the chip through the solder-bonded substrate and the heat sink. Therefore, it is desirable to use a material having high thermal conductivity for the die bond portion that joins the power semiconductor chip and the insulating substrate.

In recent years, the development and commercialization of SiC power semiconductors capable of operating at a high temperature of 200 ° C. or higher have been promoted. However, tin-silver (Sn-Ag) -based and tin-copper (Sn-Cu) -based lead (Pb) -free solders, which are currently widely used in die-bonded parts, have a melting point near 220 ° C., and thus are SiC power semiconductors. Cannot take advantage of the characteristics of. Further, solder containing a large amount of Pb has a high melting point of 290 ° C. or higher, but its application should be avoided in consideration of the impact on the environment. Further, from the viewpoint of heat resistance of peripheral members and residual stress during cooling, the joining temperature is preferably 300 ° C. or lower.

Therefore, in the present invention, an electronic component is formed by a sintering method using a bonding material such as silver nanopaste using silver nanoparticles having high heat resistance, bonding at a low temperature, and high thermal conductivity. It is an object of the present invention to provide a sintering device and a method capable of efficiently joining.

The syntering apparatus of the present invention heats a preheating part that preheats an electronic component on which a semiconductor chip is placed on a substrate via a bonding material in a tray, and an electronic component that is preheated in the preheating part. , A syntaring press unit that pressurizes and performs syntaring processing, a cooling unit that cools electronic components that have been sintered in the syntering press unit, and an electronic component that is held together with the tray and transported from the preheating unit to the syntering press unit. The second transport section includes a first transport section for transporting electronic components together with a tray from the sinking press section to the cooling section, and the second transport section provides a first inert gas supply path for supplying the inert gas. The electronic components in the tray are transported from the sinking press section to the cooling section while being covered with the inert gas supplied from the first inert gas supply path, and the cooling section is the second. The electronic component transported by the transport unit is sandwiched between the tray and the second transport unit, and the electronic component is cooled while being covered with the inert gas.

In the sintering method of the present invention, an electronic component on which a semiconductor chip is mounted on a substrate via a bonding material is preheated in a preheating section in a state of being placed in a tray, and the electronic component preheated in the preheating section is sintered. This is a sintering method in which the ring press unit heats and pressurizes the electronic components to perform the sintering process, and the sinter ring press unit cools the sintered electronic components in the cooling unit. A first inert gas supply path for holding the entire tray by the transport section and transporting the electronic components from the preheating section to the sintering press section and supplying the inert gas to the electronic components subjected to the syntering in the sintering press section. When the electronic components are transported from the sinking press section to the cooling section by the transport section together with the tray, the sinker is in a state where the electronic components in the tray are covered with the inert gas supplied from the first inert gas supply path. Transporting from the ring press section to the cooling section, in the cooling section, the electronic components transported by the second transport section were sandwiched between the tray and the second transport section, and the electronic components in the tray were covered with inert gas. It is characterized by including cooling as it is.

According to these inventions, an electronic component on which a semiconductor chip is placed on a substrate via a bonding material is preheated in a state of being placed in a tray to remove water, a solvent, etc. of the bonding material, and then sintered. The electronic components in the tray that have been sintered in the press section are transported to the cooling section as if they were covered with an inert gas, and then cooled while being covered with the inert gas. It is possible to prevent the oxidation of the member which is easily oxidized.

The sintering press section is provided on at least one of the upper die and the lower die that sandwich the electronic parts together with the tray, the sintering press section heating means provided in each of the upper die and the lower die, and the upper die and the lower die. It has a second inert gas supply path for supplying an inert gas, and electronic parts are sandwiched between an upper die and a lower die together with a tray, and is supplied from the second inert gas supply path by a sintering press unit heating means. It is desirable that the electronic parts in the tray are covered with the inert gas to be heated and then heated by the sintering press unit heating means to perform the sintering treatment. As a result, the electronic component on which the semiconductor chip is placed on the substrate via the bonding material is preheated in a state of being placed in the tray to remove water, solvent, etc. of the bonding material, and then the tray is placed in the syntering press section. The whole was sandwiched between the upper mold and the lower mold, and the electronic parts were covered with the heated inert gas and then subjected to the sintering treatment. The electronic parts in the tray after the sintering treatment were covered with the inert gas. By transporting the components to the cooling unit as a state and then cooling the components while covering them with an inert gas, it is possible to prevent the components that are easily oxidized due to the high temperature due to the sintering process from being oxidized.

The cooling unit includes a cooling unit heating means for heating the cooling unit, a cooling unit cooling means for cooling the cooling unit, and a cooling unit temperature detecting means for detecting the temperature of the cooling unit, and the cooling unit temperature detection. It is desirable that the cooling unit heating means and the cooling unit cooling means are controlled based on the temperature detected by the means to cool the electronic component to a predetermined temperature in a predetermined cooling time. As a result, the cooling unit is heated and cooled based on the result of detecting the temperature of the cooling unit, so that the electronic components after syntaring do not cause quality defects such as cracks due to rapid cooling. Can be cooled to a predetermined temperature.

The cooling unit further has a tray temperature detecting means for detecting the temperature of the tray, and the cooling unit heating means and the cooling unit cooling means based on the temperature detected by the cooling unit temperature detecting means and the temperature detected by the tray temperature detecting means. It is desirable to control. As a result, the temperature of the tray is detected in addition to the temperature of the cooling unit, and the cooling unit is controlled with higher accuracy based on the detected temperature of the cooling unit and the temperature of the tray to heat and cool the cooling unit. It is possible to cool the subsequent electronic parts to a predetermined temperature over a more appropriate cooling time so as not to cause quality defects such as cracks due to rapid cooling.

It is desirable that the cooling unit has the cooling unit heating means arranged at a position closer to the electronic component than the cooling unit cooling means. With this configuration, the entire cooling unit is cooled by the cooling unit cooling means, and the temperature of the cooling unit is controlled by the cooling unit heating means, which is arranged close to the electronic components and is easy to control with good response. It is possible to perform highly accurate cooling management.

The preheating unit has a third inert gas supply path for supplying an inert gas, a preheating unit heating means for heating the preheating unit, and a preheating unit temperature detecting means for detecting the temperature of the preheating unit. The parts are sandwiched between the tray and the first transport section, the electronic parts in the tray are covered with the inert gas supplied from the third inert gas supply path, and the preheating section is based on the temperature detected by the temperature detecting means of the preheating section. It is desirable that the heating means is controlled to preheat the electronic component at a predetermined preheating temperature for a predetermined time. As a result, the electronic components are covered with an inert gas during preheating, and the preheating section heats the components based on the result of detecting the temperature of the preheating section, thereby preventing oxidation of even a member that easily oxidizes at the preheating temperature. can do.

The first transport section has a fourth inert gas supply path for supplying the inert gas, and the preheating section keeps the electronic components covered with the inert gas supplied from the fourth inert gas supply path. It is desirable that the gas be transported to the syntering press section. As a result, by transporting the preheated electronic component to the sintering press unit while covering it with the inert gas, it is possible to prevent oxidation and perform the sintering process even for a member that is easily oxidized at the preheating temperature.

The first transport unit has a transport unit heating means for heating the first transport unit and a transport unit temperature detecting means for detecting the temperature of the first transport unit, and the temperature detected by the transport unit temperature detecting means is reached. It is desirable that the heating means of the transport unit is controlled based on the above to keep the electronic component at a predetermined temperature during the transport of the electronic component. As a result, even if it takes time to transport the electronic components from the preheating section to the sintering press section, the electronic components can be kept at a predetermined temperature during the transport, and the sintering press section can efficiently perform the sintering process.

It is desirable that the tray has through holes through which the inert gas passes up and down. As a result, when the inert gas is supplied from one of the upper and lower sides of the tray, the inert gas is supplied to the upper and lower sides of the tray through the through holes, so that the entire electronic component in the tray is covered with the inert gas from above and below. ..

(1) According to the present invention, an electronic component on which a semiconductor chip is placed on a substrate via a bonding material is preheated in a state of being placed in a tray to remove water, a solvent, etc. of the bonding material, and then the electronic component is placed. By performing the sintering process in the sintering press section, the sintering process can be stabilized, and the electronic components are fed with an inert gas until the transfer to the cooling section after the sintering process and the cooling process in the cooling section. By leaving it covered, it is possible to prevent the oxidation of members that become hot and easily oxidize due to the solvent processing, and efficiently join electronic components without degrading the quality, resulting in the quality of the electronic components. Can be improved.

(2) An electronic component on which a semiconductor chip is placed on a substrate via a bonding material is preheated in a state of being placed in a tray to remove water, a solvent, etc. of the bonding material, and then the tray is placed in a syntering press section. The whole was sandwiched between the upper mold and the lower mold, and the electronic parts were covered with the heated inert gas and then subjected to the sintering treatment. The electronic parts in the tray after the sintering treatment were covered with the inert gas. The sintering process can be stabilized by transporting the components to the cooling section as a state and then cooling the components while being covered with an inert gas. By leaving the electronic components covered with an inert gas until the transportation of the components and the cooling process in the cooling section, it is possible to prevent the oxidation of the members that tend to oxidize due to the high temperature due to the sintering process. It is possible to improve the quality of electronic components by efficiently joining electronic components without deteriorating.

(3) The cooling unit has a cooling unit heating means for heating the cooling unit, a cooling unit cooling means for cooling the cooling unit, and a cooling unit temperature detecting means for detecting the temperature of the cooling unit for cooling. By controlling the cooling unit heating means and the cooling unit cooling means based on the temperature detected by the unit temperature detecting means to cool the electronic parts to a predetermined temperature in a predetermined cooling time, quality such as crack generation occurs. It is possible to prevent defects and further improve the quality of electronic parts.

(4) The cooling unit further has a tray temperature detecting means for detecting the temperature of the tray, and the cooling unit heating means and cooling are based on the temperature detected by the cooling unit temperature detecting means and the temperature detected by the tray temperature detecting means. By controlling the part cooling means, it is possible to further prevent quality defects such as cracks and further improve the quality of electronic parts.

(5) Since the cooling unit heating means is arranged at a position closer to the electronic component than the cooling unit cooling means, it becomes possible to perform highly accurate cooling control of the cooling unit and cracks occur. It is possible to more efficiently prevent such quality defects and further improve the quality of electronic components.

(6) The preheating unit has a third inert gas supply path for supplying an inert gas, a preheating unit heating means for heating the preheating unit, and a preheating unit temperature detecting means for detecting the temperature of the preheating unit. Then, the electronic component is sandwiched between the tray and the first transport section, the electronic component in the tray is covered with the inert gas supplied from the third inert gas supply path, and the temperature is based on the temperature detected by the preheating section temperature detecting means. By controlling the heating means of the preheating section to preheat the electronic component at a predetermined preheating temperature for a predetermined time, it is possible to prevent oxidation of a member that is easily oxidized at the preheating temperature, and the quality is deteriorated. It is possible to efficiently join the electronic parts and improve the quality of the electronic parts without causing the trouble.

(7) The transport section has a fourth inert gas supply path for supplying the inert gas, and the preheating section is in a state where the electronic components are covered with the inert gas supplied from the fourth inert gas supply path. By transporting the material from the to the syntering press section, even a member that easily oxidizes at the preheating temperature can be sintered by preventing oxidation, and the electronic component can be made more efficient without degrading the quality. It can be joined well to further improve the quality of electronic components.

(8) The first transport unit has a transport unit heating means for heating the first transport unit and a transport unit temperature detecting means for detecting the temperature of the first transport unit, and is detected by the transport unit temperature detecting means. By controlling the heating means of the transport unit based on the temperature of the transfer unit to keep the electronic component at a predetermined temperature during the transfer of the electronic component, the preheating section is provided with a plurality of sintering press sections for sintering. Even if it takes a long time to transfer to the press section, the electronic parts can be held at a predetermined temperature during transfer, and the sintering press section can efficiently perform the sintering process.

(9) Since the tray has through holes through which the inert gas passes up and down, the entire electronic component can be covered with the inert gas with a simple configuration, and oxidation can be prevented to prevent the electronic component from oxidizing. The quality can be improved.

It is a schematic block diagram of the sintering apparatus of the electronic component in embodiment of this invention. It is a figure which shows the details of a preheating part and a 1st transport part, (A) is a vertical sectional view which shows the state before sandwiching an electronic component between a preheating part and a 1st transport part, (B) is a figure which preheats an electronic component. A vertical cross-sectional view showing a state of being sandwiched between the portion and the first transport portion, (C) is a vertical cross-sectional view showing a state in which the preheated electronic component is held by the first transport portion. It is a figure which shows the detail of the sintering press part, (A) is the vertical sectional view which shows the state which opened the mold, (B) is the vertical sectional view which shows the state which the mold was closed. It is a figure which shows the detail of the 2nd transport part and the cooling part, (A) is the vertical sectional view which shows the state before sandwiching an electronic component between 2nd transport part and a cooling part, (B) is the electronic component | 2 It is a vertical cross-sectional view which shows the state which sandwiched between a transport part and a cooling part. It is a figure which shows the flow of the inert gas supplied from the third inert gas supply passage, (A) is the figure which made the part of the tray of FIG. 2 (B) a plan view, (B) is (A). AA cross-sectional view, (C) is a BB cross-sectional view of (A). It is sectional drawing which shows another example of the 3rd inert gas supply path. It is a vertical cross-sectional view explaining the pressing mechanism of a sintering press part. It is a figure which shows the example of the temperature control of a cooling part. It is a figure which shows the example of the cooling part, (A) is the cross-sectional view which shows the cooling part heating means, (B) is the cross-sectional view which shows the cooling part cooling means. It is a figure which shows another example of a cooling part. It is a schematic block diagram which shows another Embodiment of the sintering apparatus of this invention. It is a schematic block diagram which shows still another Embodiment of the sintering apparatus of this invention.

FIG. 1 is a schematic configuration diagram of an electronic component syntering device according to an embodiment of the present invention, FIG. 2 is a diagram showing details of a preheating section and a first transport section, and FIG. 2A shows an electronic component as a preheating section. A vertical cross-sectional view showing a state before being sandwiched between the first transport section, (B) is a vertical cross-sectional view showing a state in which an electronic component is sandwiched between a preheating section and the first transport section, and (C) is an electronic component after preheating. 3 is a vertical cross-sectional view showing a state in which is held by the first transport section, FIG. 3 is a view showing details of a syntering press section, (A) is a vertical cross-sectional view showing a state in which the mold is opened, and (B) is a vertical cross-sectional view. A vertical cross-sectional view showing a state in which the mold is tightened, FIG. 4 is a view showing details of the second transport unit and the cooling unit, and FIG. 4A is a state before the electronic component is sandwiched between the second transport unit and the cooling unit. (B) is a vertical cross-sectional view showing a state in which an electronic component is sandwiched between a second transport portion and a cooling portion.

In FIG. 1, the electronic component syntering device 1 according to the embodiment of the present invention includes a supply unit 2 for supplying the electronic component 11, a preheating unit 3 for preheating the electronic component 11 supplied by the supply unit 2, and a preheating unit 3. A sintering press section 4 that sinters the electronic component 11 after preheating by the section 3, a cooling section 5 that cools the electronic component after the sintering process by the sintering press section 4, and an electron after cooling by the cooling section 5. A storage unit 6 for storing parts, a first transport unit 7 for transporting electronic components 11 from a preheating unit 3 to a writing press unit 4, and a second transport unit 7 for transporting electronic components from a syntering press unit 4 to a cooling unit 5. It has a unit 8, an inert gas supply unit 9 that supplies an inert gas such as nitrogen gas, and a temperature control unit 10 that controls the temperature of the preheating unit 3, the syntering press unit 4, the cooling unit 5, and the like.

As shown in FIG. 2, the electronic component 11 is a semiconductor chip 11A mounted on a substrate 11B such as an insulating substrate via a bonding material (not shown). The bonding material is a bonding material for sintering (sintering method) such as silver nanopaste using silver nanoparticles having high heat resistance, capable of bonding at a low temperature, and high thermal conductivity. The semiconductor chip is a power semiconductor chip used in a power module. The electronic component 11 is conveyed in the sintering device 1 together with the tray 12 while one or a plurality of the electronic components 11 are placed in the tray 12. The tray 12 has an accommodating portion 12A for accommodating the electronic components 11 one by one. The accommodating portion 12A has an opening 12B that penetrates the tray 12 vertically.

The preheating section 3 is arranged in front of the sintering press section 4. The preheating unit 3 preheats the electronic component 11 at the first preheating temperature. The first preheating temperature is a temperature lower than the sintering treatment temperature. The first preheating temperature is around 100 ° C. (preferably 80 to 120 ° C.) when the bonding material is silver nanopaste. As shown in FIG. 2, the preheating section 3 includes a third inert gas supply path 31 for supplying the inert gas, a preheating section heating means 32 for heating the preheating section 3, and preheating for detecting the temperature of the preheating section 3. It has a unit temperature detecting means 33.

In the preheating unit 3, the electronic component 11 transported from the supply unit 2 by the first transport unit 7 is sandwiched between the tray 12 and the first transport unit 7 together with the tray 12, and the first preheat unit 3 is used. Preheat to temperature. At this time, in the preheating unit 3, the electronic component 11 in the tray 12 is covered with the inert gas supplied from the inert gas supply unit 9 through the third inert gas supply path 31, and the temperature control unit 10 covers the temperature detecting means of the preheating unit. The preheating unit heating means 32 is controlled based on the temperature detected by 33 to preheat the electronic component 11 at a predetermined first preheating temperature for a predetermined time.

FIG. 5 is a diagram showing the flow of the inert gas supplied from the third inert gas supply path 31, and FIG. 5A is a plan view of a part of the tray 12 of FIG. 2B, (B). ) Is a cross-sectional view taken along the line AA of (A), and (C) is a cross-sectional view taken along the line BB of (A).

As shown in FIG. 5, the third inert gas supply path 31 is connected to the first flow path 31A for supplying the inert gas to the lower part of each accommodation section 12A and the first flow path 31A, and is connected to each accommodation section 12A. It includes a second flow path 31B that is opened toward the opening and a third flow path 31C that is connected to the second flow path 31B and is opened toward the opening 12B of each accommodating portion 12A. The opening 12B of the tray 12 is formed in the central portion of the accommodating portion 12A accommodating each electronic component 11 so as to be slightly smaller than the electronic component 11 (board 11B) in a plan view. Further, at the four corners of the accommodating portion 12A, openings 12C for connecting the space on the electronic component 11 of the accommodating portion 12A and the second flow path 31B are provided.

The opening 12B of the tray 12 is closed by the accommodated electronic component 11 when the electronic component 11 is accommodated in the accommodating portion 12A, but the inert gas supplied from the third inert gas supply path 31 Is supplied to the space on the electronic component 11 of the accommodating portion 12A through the first flow path 31A, the second flow path 31B, and the opening 12C. On the other hand, the inert gas is supplied to the opening 12B below the accommodating portion 12A through the first flow path 31A, the second flow path 31B, and the third flow path 31C.

FIG. 6 shows another example of the third inert gas supply path 31. In the example shown in FIG. 6, a supply path 12D connected to the second flow path 31B and the opening 12B is provided on the lower surface of the tray 12. As a result, the inert gas is supplied to the opening 12B below the accommodating portion 12A through the first flow path 31A, the second flow path 31B, and the supply path 12D.

That is, in the tray 12 of the present embodiment, since the spaces above and below the tray 12 are communicated by the openings 12B and 12C, the tray 12 is moved up and down with respect to the electronic component 11 sandwiched between the preheating unit 3 and the first transport unit 7. When the inert gas is supplied from any one of the spaces, the entire electronic component 11 in the tray 12 is covered with the inert gas through the openings 12B and 12C.

The first transport unit 7 includes a fourth inert gas supply path 71 for supplying the inert gas, a transport unit heating means 72 for heating the first transport unit 7, and a transport unit for detecting the temperature of the first transport unit 7. It has a temperature detecting means 73. As shown in FIG. 2C, the first transport unit 7 holds the preheated electronic component 11 on the lower side and transports it from the preheat unit 3 to the sintering press unit 4. At this time, the first transport unit 7 transports the electronic component 11 in the tray 12 while being covered with the inert gas supplied from the inert gas supply unit 9 through the fourth inert gas supply path 71. During the transfer of the electronic component 11, the first transfer unit 7 controls the transfer unit heating means 72 based on the temperature detected by the temperature control unit 10 by the transfer unit temperature detecting means 73, and sets the electronic component 11 to a predetermined number. 2 Keep at preheating temperature. The second preheating temperature is a temperature lower than the sintering treatment temperature. The second preheating temperature is around 100 ° C. (preferably 80 to 120 ° C.) when the bonding material is silver nanopaste.

As shown in FIG. 3, the sintering press unit 4 includes an upper die 40A and a lower die 40B that sandwich the electronic component 11 together with the tray 12, a second inert gas supply path 41 that supplies the inert gas, and the upper die 40A. Each of the lower mold 40B has a sintering press portion heating means 42A and 42B, and a mold clamping mechanism 43 for molding the upper mold 40A and the lower mold 40B. Further, the upper die 40A is provided with a pressing member 44 that presses the electronic component 11 in the tray 12 from above. On the other hand, the lower mold 40B is provided with a receiving member 45 that supports the electronic component 11 pressed by the pressing member 44 from below through the opening 12B of the tray 12.

In the illustrated example, the second inert gas supply path 41 is provided in the lower die 40B, but the second inert gas supply path 41 is provided in at least one of the upper die 40A and the lower die 40B. Just do it. Further, the pressing member 44 and the receiving member 45 may be arranged upside down.

FIG. 7 is a vertical cross-sectional view illustrating the pressing mechanism of the sintering press unit 4. As shown in FIG. 7, the lower mold 40B is formed with a cylinder space 46C in which the piston 46B connected to the tip of the rod 46A extending from the receiving member 45 slides up and down. A hydraulic mechanism 47 is connected to the space below the piston 46B of the cylinder space 46C. As a result, when the upper mold 40A and the lower mold 40B are molded by the mold clamping mechanism 43, the electronic component 11 is pressed against the receiving member 45 by the pressing member 44, and the excess pressure is applied to the cylinder space through the rod 46A and the piston 46B. It is released to the hydraulic mechanism 47 through the pressure oil in 46C.

It is also possible to have an elastic member 48 interposed between the pressing member 44 and the electronic component 11. When the pressing member 44 presses the electronic component 11, the electronic component 11 can be prevented from being damaged by pressing through the elastic member 48. The elastic member 48 is an elastic sheet, a resin film, or the like. The elastic member 48 can be used a plurality of times.

In the sintering press unit 4, the electronic component 11 preheated in the preheating unit 3 is sandwiched between the upper mold 40A and the lower mold 40B together with the tray 12, and after molding is performed by the mold clamping mechanism 43, the sintered material is lower than the melting point of the bonding material. Sintering is performed by heating and pressurizing at the ring processing temperature. At this time, in the sintering press section 4, the electronic components in the tray 12 are supplied from the inert gas supply section 9 through the second inert gas supply path 41 and heated by the inert gas 42B of the sintering press section. 11 is covered. The sintering press unit 4 performs the sintering process in a state where the electronic component 11 in the tray 12 is covered with the inert gas in this way. When the bonding material is silver nanopaste, it is heated at a sintering treatment temperature of 250 to 300 ° C. and pressurized at a pressure of 5 to 20 MPa.

The second transport unit 8 has a first inert gas supply path 81 for supplying the inert gas. As shown in FIG. 4, the second transport unit 8 holds the electronic component 11 after the sintering process together with the tray 12 on the lower side, and transports the electronic component 11 from the sintering press unit 4 to the cooling unit 5. At this time, the second transport unit 8 transports the electronic component 11 in the tray 12 in a state of being covered with the inert gas supplied from the inert gas supply unit 9 through the first inert gas supply path 81.

The cooling unit 5 is arranged after the sintering press unit 4. The cooling unit 5 cools the electronic component 11 to a cooling temperature lower than the sintering processing temperature. The cooling temperature is about 100 ° C. (preferably 80 to 120 ° C.) or less. As shown in FIG. 4, the cooling unit 5 includes a cooling unit heating means 51 that heats the cooling unit 5, a cooling unit cooling means 52 that cools the cooling unit 5, and a cooling unit temperature detection that detects the temperature of the cooling unit 5. It has means 53. The cooling unit heating means 51 is arranged at a position closer to the electronic component 11 than the cooling unit cooling means 52.

In the cooling unit 5, the electronic component 11 transported from the sintering press unit 4 by the second transport unit 8 is sandwiched between the tray 12 and the second transport unit 8 and cooled to the cooling temperature. At this time, in the cooling unit 5, the electronic component 11 in the tray 12 is covered with the inert gas supplied from the inert gas supply unit 9 through the first inert gas supply path 81 of the second transport unit 8, and the temperature control unit 5 is used. 10 controls the cooling unit heating means 51 and the cooling unit cooling means 52 based on the temperature detected by the cooling unit temperature detecting means 53, and cools the electronic component 11 to a predetermined temperature in a predetermined cooling time.

FIG. 8 shows an example of temperature control of the cooling unit 5. In the example shown in FIG. 8, the temperature detected by the cooling unit temperature detecting means 53 rises from the place where the tray 12 is placed on the cooling unit 5 to 300 ° C. The temperature control unit 10 sets the cooling unit heating means 51 and the cooling unit cooling means 52 so that the temperature detected by the cooling unit temperature detecting means 53 drops to 80 ° C. in 90 seconds from the placement of the tray 12 to the removal of the tray 12. Control.

Further, the cooling unit 5 may be further provided with the tray temperature detecting means 54 for detecting the temperature of the tray 12. As the tray temperature detecting means 54, for example, a non-contact thermometer using infrared rays can be used. As a result, the temperature control unit 10 controls the cooling unit heating means 51 and the cooling unit cooling means 52 based on the temperature detected by the tray temperature detecting means 54 in addition to the temperature detected by the cooling unit temperature detecting means 53. The temperature can be controlled with even higher precision.

9A and 9B are views showing an example of the cooling unit 5, in which FIG. 9A is a cross-sectional view showing the cooling unit heating means 51, and FIG. 9B is a cross-sectional view showing the cooling unit cooling means 52. The cooling unit heating means 51 shown in FIG. 9A is a plurality of rod-shaped electric heating type heaters embedded in the upper part of the cooling unit 5 and extending in the horizontal direction. The cooling unit cooling means 52 shown in FIG. 9B is a flow path that meanders in the lower portion of the cooling unit 5 in the horizontal direction, and the cooling unit 5 is cooled by passing a refrigerant such as cooling compressed air through this flow path. Will be done.

FIG. 10 is a diagram showing another example of the cooling unit 5. In the example shown in FIG. 10, the cooling unit cooling means 52 is a heat radiation fin provided on the lower surface of the cooling unit 5. The cooling unit 5 is cooled by blowing cold air onto the heat radiating fins.

In the sintering device 1 having the above configuration, the electronic component 11 on which the semiconductor chip 11A is placed on the substrate 11B via the bonding material is conveyed from the supply unit 2 to the preheating unit 3. In the preheating section 3, the electronic component 11 transported from the supply section 2 by the first transport section 7 is sandwiched between the tray 12 and the first transport section 7, and the inert gas supply section 9 to the third inert gas supply path. The electronic component 11 in the tray 12 is covered with the inert gas supplied through 31 and the electronic component 11 is preheated at a predetermined first preheating temperature for a predetermined time. The first preheating temperature is a temperature even lower than the sintering treatment temperature, which is lower than the melting point of the bonding material, and the water content, solvent, and the like of the bonding material are removed without the sintering of the bonding material proceeding.

The electronic component 11 preheated by the preheating unit 3 is conveyed to the sintering press unit 4 by the first conveying unit 7. At this time, the first transport unit 7 transports the electronic component 11 in the tray 12 while being covered with the inert gas supplied from the inert gas supply unit 9 through the fourth inert gas supply path 71. During the transfer of the electronic component 11, the first transfer unit 7 controls the transfer unit heating means 72 to maintain the electronic component 11 at a predetermined second preheating temperature and prevent the temperature of the electronic component 11 from dropping. do.

In the sintering press unit 4, the electronic component 11 preheated in the preheating unit 3 is sandwiched between the upper mold 40A and the lower mold 40B together with the tray 12, and after molding is performed by the mold clamping mechanism 43, the sintered material is lower than the melting point of the bonding material. Sintering is performed by heating and pressurizing at the ring processing temperature. At this time, in the sintering press section 4, the electronic components in the tray 12 are supplied from the inert gas supply section 9 through the second inert gas supply path 41 and heated by the inert gas 42B of the sintering press section. The syntaring process is performed with the 11 covered.

The electronic component 11 sintered by the sintering press unit 4 is conveyed to the cooling unit 5 by the second conveying unit 8. At this time, the second transport unit 8 transports the electronic component 11 in the tray 12 in a state of being covered with the inert gas supplied from the inert gas supply unit 9 through the first inert gas supply path 81.

In the cooling unit 5, the electronic component 11 transported from the sintering press unit 4 by the second transport unit 8 is sandwiched between the tray 12 and the second transport unit 8 and cooled to the cooling temperature. At this time, in the cooling unit 5, the electronic component 11 in the tray 12 is covered with the inert gas supplied from the inert gas supply unit 9 through the first inert gas supply path 81 of the second transport unit 8. Cool to a predetermined temperature within the cooling time of. The electronic component 11 cooled by the cooling unit 5 is conveyed to the storage unit 6 together with the tray 12 and stored.

As described above, according to the solvent ring device 1 in the present embodiment, the electronic component 11 on which the semiconductor chip is placed on the substrate via the bonding material is preheated and bonded in a state of being placed in the tray 12. After removing water, solvent, etc. from the material, the electronic component 11 in the tray 12 that has been sintered in the syntering press unit 4 is conveyed to the cooling unit 5 in a state of being covered with the inert gas, and further, the inert gas is used. By cooling while covered, it is possible to prevent the oxidation of members that are easily oxidized due to the high temperature due to the solvent treatment, and the electronic components 11 can be efficiently joined without degrading the quality. Therefore, the quality of the electronic component 11 can be improved.

Further, in the sintering device 1 of the present embodiment, the sintering press section 4 is provided with the second inert gas supply path 41 and the sintering press section heating means 42A and 42B, from the second inert gas supply path 41. The supplied inert gas is heated by the sintering press section heating means 42B, and the inert gas covers the electronic parts 11 in the tray 12 and is heated by the sintering press section heating means 42A and 42B for sintering. Since the treatment is performed, it is possible to prevent the member from being easily oxidized due to a high temperature during the sintering treatment.

Further, in the syntering device 1 of the present embodiment, the cooling unit 5 controls the cooling unit heating means 51 and the cooling unit cooling means 52 based on the temperature detected by the cooling unit temperature detecting means 53 to control the electronic component 11. It can be cooled to a predetermined temperature over an appropriate cooling time, and the electronic component 11 after syntaring can be prevented from causing quality defects such as cracks due to rapid cooling. As a result, quality defects such as cracks can be prevented, and the quality of electronic components can be further improved.

Further, the cooling unit 5 is assumed to have the tray temperature detecting means 54 for detecting the temperature of the tray 12, and is based on the temperature detected by the cooling unit temperature detecting means 53 and the temperature detected by the tray temperature detecting means 54. By controlling the heating means 51 and the cooling unit cooling means 52, a more appropriate cooling time is taken so that the electronic component 11 after syntaring does not cause quality defects such as cracks due to rapid cooling. It can be cooled to a predetermined temperature.

Further, in the cooling unit 5 of the present embodiment, since the cooling unit heating means 51 is arranged at a position closer to the electronic component 11 than the cooling unit cooling means 52, the cooling unit cooling means 52 cools the entire cooling unit 5. The temperature control of the cooling unit 5 can be performed by the cooling unit heating means 51, which is arranged near the electronic parts and is easy to control with good response, and can perform highly accurate cooling management of the cooling unit 5. It is possible.

When the cooling unit cooling means 52 is close to the electronic component 11 and the cooling unit heating means 51 is arranged at a distant position, when the surface of the cooling unit 5 in contact with the electronic component 11 (the surface of the mounting portion) is too cold. In addition, the heat of the cooling unit heating means 51 is blocked by the cold air of the cooling unit cooling means 52, and is difficult to be transmitted to the surface of the mounting portion, making temperature control difficult. On the other hand, when the cooling unit heating means 51 is arranged at a position close to the electronic component 11 as in the cooling unit 5 in the present embodiment, the cooling unit cooling means 52 includes the cooling unit heating means 51 as a whole of the cooling unit 5. The temperature can be easily controlled by controlling the temperature of the cooling unit heating means 51, which is close to the surface of the mounting unit, up and down as necessary.

In particular, in the cooling unit 5 of the present embodiment, since the cooling unit cooling means 52 controls the flow rate of a refrigerant such as cooling compressed air, the temperature change due to the flow rate control has a poor response and fine control is difficult. Since the part heating means 51 is an electric heater, the temperature control can be easily controlled with good response by electric control. By arranging the cooling part heating means 51 at a position close to the electronic component 11 as described above, the temperature control can be performed. It's easy.

Further, the preheating section 3 in the present embodiment detects the temperature of the third inert gas supply path 31 for supplying the inert gas, the preheating section heating means 32 for heating the preheating section 3, and the temperature of the preheating section 3. It has a preheating unit temperature detecting means 33, sandwiches the electronic component 11 together with the tray 12 between the first transport section 7, and the electronic component in the tray 12 by the inert gas supplied from the third inert gas supply path 31. 11 is covered, and the preheating unit heating means 32 is controlled based on the temperature detected by the preheating unit temperature detecting means 33 to preheat the electronic component 11 at a predetermined preheating temperature for a predetermined time. Even if there is, oxidation can be prevented.

Further, in the sintering device 1 in the present embodiment, the first transport unit 7 has a fourth inert gas supply path 71 for supplying the inert gas, and the non-active gas supply path 71 is supplied from the fourth inert gas supply path 71. Since the electronic component 11 is conveyed from the preheating section 3 to the syntering press section 4 while being covered with the active gas, even a member that easily oxidizes at the preheating temperature can be prevented from oxidizing and subjected to the syntaring process. ..

Further, the first transport unit 7 has a transport unit heating means 72 for heating the first transport unit 7 and a transport unit temperature detecting means 73 for detecting the temperature of the first transport unit 7, and the transport unit temperature. In order to control the transport unit heating means 72 based on the temperature detected by the detection means 73 and keep the electronic component 11 at a predetermined temperature during the transfer of the electronic component 11, the transfer from the preheating section 3 to the sintering press section 4 is performed. Even if it takes a long time, the electronic component 11 can be held at a predetermined temperature during transportation, and the sintering press unit 4 can efficiently perform the sintering process.

FIG. 11 is a schematic configuration diagram of a sintering device 1A showing another embodiment of the present invention. The sintering device 1A shown in FIG. 11 includes a plurality of sintering press units 4A and 4B. In this sintering device 1A, the first conveying section 7 conveys the electronic component 11 from the preheating section 3 to the respective sintering press sections 4A and 4B. At this time, the transport time from the preheating section 3 to the sintering press section 4B, which is farther from the preheating section 3, is longer than the transport time to the sintering press section 4A, which is close to the preheating section 3, but the first transport section 7 is being transported during the transfer of the electronic component 11. By keeping the temperature at a predetermined temperature, the sintering press unit 4B can also perform the sintering process efficiently.

FIG. 12 is a schematic configuration diagram of a sintering device 1B showing still another embodiment of the present invention. The sintering device 1B shown in FIG. 12 includes a plurality of sintering press units 4A, 4B, 4C, and 4D. Further, in addition to the cooling unit 5 and the storage unit 6, a second cooling unit 5A and a second storage unit 6A are provided. In this sintering device 1B, the first conveying section 7 conveys the electronic component 11 from the preheating section 3 to the sintering press sections 4A to 4D. In addition, the second transport unit 8 transports the electronic components 11 sintered by the sintering press units 4A to 4D from the sintering press units 4A to 4D to the cooling unit 5.

The second cooling unit 5A cools the cooling unit 5 to an intermediate temperature as a first predetermined temperature, and then further cools to a target temperature as a second predetermined temperature. The intermediate temperature is a temperature higher than the target temperature (for example, 150 to 200 ° C.). If the electronic component 11 that has been sintered at the sintering processing temperature of 250 to 300 ° C. in each of the sintering press units 4A to 4D is rapidly cooled to the target temperature, the inside of the electronic component 11 may be damaged. , I want to cool (slowly cool) as slowly as possible, but if the cooling time is lengthened, the production efficiency will decrease.

Therefore, in the sintering device 1B of the present embodiment, the electronic component 11 is once cooled to the intermediate temperature in the cooling unit 5, and then further cooled to the target temperature, that is, cooled in two stages. As a result, the cooling unit 5 and the second cooling unit 5A can simultaneously share and proceed with the cooling process, so that the cooling time can be shortened and the production time of the electronic component 11 can be shortened.

Further, although not shown, the second cooling unit 5A can be further formed into a plurality of cooling units. As a result, after being cooled to a predetermined intermediate temperature by the cooling unit 5, it is possible to further gradually cool, that is, to share the cooling with the plurality of cooling units. Although the electronic component 11 can be moved between the plurality of cooling units by the second transport unit 8, it is also possible to further improve the production efficiency by providing another transport unit.

Alternatively, it is also possible to distribute the cooling of the electronic component 11 to a plurality of cooling units such as the cooling unit 5 and the second cooling unit 5A to cool the electronic component 11. As a result, it is possible to shorten the cooling time as a whole even if the cooling time in each cooling unit is lengthened. Further, by providing a plurality of storage units corresponding to the plurality of cooling units as in the second storage unit 6A shown in FIG. 12, the production time of the electronic component 11 can be further shortened.

The sintering device and method of the present invention use a bonding material such as silver nanopaste using silver nanoparticles having high heat resistance, bonding at a low temperature, and high thermal conductivity by a sintering method. It is useful as a device and method capable of efficiently joining electronic components.

1,1A, 1B Sintering device 2 Supply part 3 Preheating part 31 Third inert gas supply path 32 Preheating part Heating means 33 Preheating part Temperature detection means 4,4A, 4B, 4C, 4D Sintering press part 40A Upper type 40B Lower mold 41 Second inert gas supply path 42A, 42B Sintering press part Heating means 43 Mold tightening mechanism 44 Pressing member 45 Receiving member 46A Rod 46B Piston 46C Cylinder space 47 Hydraulic mechanism 48 Elastic member 5 Cooling part 51 Cooling part Heating means 52 Cooling unit cooling means 53 Cooling unit temperature detecting means 54 Tray temperature detecting means 5A 2nd cooling unit 6 Storage unit 6A 2nd storage unit 7 1st transport unit 71 4th inert gas supply path 72 Transport unit heating means 73 Transport unit Temperature detection means 8 2nd carrier 81 1st inert gas supply path 9 Inert gas supply section 10 Temperature control section 11 Electronic parts 11A Semiconductor chip 11B Substrate 12 Tray 12A Storage section 12B, 12C Open hole 12D Supply path

Claims (14)

A preheating unit that preheats an electronic component on which a semiconductor chip is placed on a substrate via a bonding material while it is placed in a tray.
A sintering press unit that heats and pressurizes the electronic component preheated in the preheating unit to perform a sintering process, and a sintering press unit.
A cooling unit that cools the electronic components that have been sintered in the sintering press unit, and a cooling unit that cools the electronic components.
A first transport section that holds the electronic components together with the tray and transports the electronic components from the preheating section to the sintering press section.
Includes a second transport unit that transports the electronic components together with the tray from the sintering press unit to the cooling unit.
The second transport section has a first inert gas supply path for supplying the inert gas, and the electronic component in the tray is covered with the inert gas supplied from the first inert gas supply path. It is transported from the sinking press section to the cooling section in the same state.
The cooling unit sandwiches the electronic component transported by the second transport unit together with the tray between the second transport unit and the electronic component in the tray while being covered with the inert gas. A sintering device that cools. The sintering press section includes an upper die and a lower die that sandwich the electronic component together with the tray, a sintering press section heating means provided in each of the upper die and the lower die, and the upper die and the lower die. It has a second inert gas supply path for supplying an inert gas, and the electronic component is sandwiched between the upper mold and the lower mold together with the tray to supply the second inert gas. The electronic parts in the tray are covered with an inert gas supplied from the path and heated by the sintering press unit heating means, and then heated by the sintering press unit heating means to perform a sintering process. The sintering device according to claim 1. The cooling unit includes a cooling unit heating means for heating the cooling unit, a cooling unit cooling means for cooling the cooling unit, and a cooling unit temperature detecting means for detecting the temperature of the cooling unit. According to claim 1 or 2, the cooling unit heating means and the cooling unit cooling means are controlled based on the temperature detected by the temperature detecting means to cool the electronic component to a predetermined temperature in a predetermined cooling time. The described sintering device. The cooling unit further includes a tray temperature detecting means for detecting the temperature of the tray, and the cooling unit heating means based on the temperature detected by the cooling unit temperature detecting means and the temperature detected by the tray temperature detecting means. The sintering device according to claim 3, wherein the cooling unit is controlled. The sintering device according to claim 3 or 4, wherein the cooling unit is a cooling unit heating means arranged at a position closer to the electronic component than the cooling unit cooling means. The preheating unit has a third inert gas supply path for supplying an inert gas, a preheating unit heating means for heating the preheating unit, and a preheating unit temperature detecting means for detecting the temperature of the preheating unit. The electronic component is sandwiched between the tray and the first transport section, the electronic component in the tray is covered with the inert gas supplied from the third inert gas supply path, and the temperature detecting means of the preheating section is used. The sintering device according to any one of claims 1 to 5, wherein the preheating unit heating means is controlled based on the detected temperature to preheat the electronic component at a predetermined preheating temperature for a predetermined time. The first transport section has a fourth inert gas supply path for supplying the inert gas, and the electronic component is covered with the inert gas supplied from the fourth inert gas supply path. The sintering device according to any one of claims 1 to 6, which is transported from the preheating section to the sintering press section. The first transport unit has a transport unit heating means for heating the first transport unit and a transport unit temperature detecting means for detecting the temperature of the first transport unit, and is detected by the transport unit temperature detecting means. The sintering device according to any one of claims 1 to 7, wherein the transport unit heating means is controlled based on the temperature to hold the electronic component at a predetermined temperature during transport of the electronic component. The sintering device according to any one of claims 1 to 8, wherein the tray has through holes through which the inert gas passes up and down. The sintering apparatus according to any one of claims 1 to 9, further comprising a plurality of cooling units for cooling the electronic component subjected to the sintering process in the sintering press unit. The sintering device according to claim 10, wherein the plurality of cooling units are cooled to a predetermined temperature in the cooling unit and then cooled in a stepwise manner. It has a plurality of the sintering press unit and the cooling unit, respectively.
The sintering device according to any one of claims 1 to 9, wherein the plurality of cooling units distribute and cool the electronic components that have been sintered by the plurality of sintering press units. An electronic component on which a semiconductor chip is placed on a substrate via a bonding material is preheated in a preheating section while being placed in a tray, and the electronic component preheated in the preheating section is heated in a sintering press section. A sintering method in which the electronic components that have been sintered in the sintering press section are cooled in the cooling section by pressurizing and sintering the electronic components.
The electronic component preheated in the preheating section is held by the first transport section together with the tray, and is transported from the preheating section to the sintering press section.
The electronic component that has been sintered in the sintering press section is transferred from the sintering press section to the cooling section by a second transport section having a first inert gas supply path for supplying the inert gas. Is transported from the sinking press unit to the cooling unit while the electronic components in the tray are covered with the inert gas supplied from the first inert gas supply path. matter,
In the cooling unit, the electronic component transported by the second transport unit is sandwiched between the tray and the second transport unit, and the electronic component in the tray is covered with the inert gas. Sintering methods that include cooling. In the sintering press unit, the electronic component is sandwiched between the upper mold and the lower mold together with the tray, and is supplied from a first inert gas supply path provided in at least one of the upper mold and the lower mold. The sintering press unit is heated in a state where the electronic parts in the tray are covered with the inert gas which is an active gas and is heated by the sintering press unit heating means provided in each of the upper mold and the lower mold. The sintering method according to claim 13, which comprises heating by means to perform a sintering treatment.

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