CN105609492B - The manufacturing method of stack-up type semiconductor package body - Google Patents
The manufacturing method of stack-up type semiconductor package body Download PDFInfo
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- CN105609492B CN105609492B CN201510789257.4A CN201510789257A CN105609492B CN 105609492 B CN105609492 B CN 105609492B CN 201510789257 A CN201510789257 A CN 201510789257A CN 105609492 B CN105609492 B CN 105609492B
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- semiconductor package
- package body
- direct contact
- stack
- contact heater
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The present invention relates to a kind of manufacturing methods of stack-up type semiconductor package body, more specifically, are related to a kind of manufacturing multiple semiconductor package bodies sequentially manufacturing method of the stack-up type semiconductor package body of stack-up type semiconductor package body made of lamination along the vertical direction.The manufacturing method of the stack-up type semiconductor package body of the present invention welds the first semiconductor package body and the second semiconductor package body using the packaging body connection terminal being interposed between the first semiconductor package body and the second semiconductor package body, while being engaged the first semiconductor package body with the second semiconductor package body using the solid between the first semiconductor package body and the second semiconductor package body.Therefore, can manufacture it is firmer than the previous stack-up type semiconductor package body for engaging the first semiconductor package body with the second semiconductor package body merely with packaging body connection terminal and in structure superior stack-up type semiconductor package body.
Description
Technical field
The present invention relates to a kind of manufacturing methods of stack-up type semiconductor package body, more specifically, are related to one kind to make
Make multiple semiconductor package bodies sequentially stack-up type semiconductor package of stack-up type semiconductor package body made of lamination along the vertical direction
Fill the manufacturing method of body.
Background technology
Semiconductor element is in order to expand its capacitance and function, and integrated level gradually increases in chip (wafer) manufactures processing procedure.
If be intended on chip expand semiconductor element capacitance and function, need to be put into wafer fabrication process a large amount of equipment and
Need more expense.
It in contrast, will if utilized during being assembled into packaging body after making semiconductor chip (chip) on chip
The method that more than two semiconductor chips or more than two semiconductor package bodies are integrated into one can then be set with less
Standby input and expense expand the capacitance and function of semiconductor element.Therefore, in semiconductor fabrication, (packaging) is encapsulated
Technology is as final electrical property, reliability, productivity and the electronic system (electronic for determining device (device)
System the core technology of miniaturization) and its importance increasingly increases.
Recently, many Semiconductor enterprises are applied to further increase the installation effectiveness of unit volume in encapsulation procedure
Integrated semiconductor packages body technique.As representative integrated semiconductor package body, there is system grade encapsulation body (System
In Package, SIP), multi-chip encapsulation body (Multi Chip Package, MCP), stack-up type packaging body (Package On
Package, POP；Hereinafter referred to as " stack-up type semiconductor package body ") etc..In these integrated semiconductor package bodies, stack-up type
Semiconductor package body is the envelope that the multiple single semiconductor package bodies for completing encapsulation procedure and electrical inspection processing procedure are integrated into one
Fill body.Therefore, it removes undesirable state fully to check Electricity Functional to single semiconductor package body and realizes assembling, so tool
It has the following advantages：The electrical bad reduction occurred after being assembled into stack-up type packaging body (Package On Package) structure,
A semiconductor package body can be made in the single semiconductor package body for executing different function.
This stack-up type semiconductor package body is made via welding (soldering) processing procedure, the welding processing procedure be
In the state that lamination there are multiple single semiconductor package bodies, it is heated to the weldering of the multiple single semiconductor package body electrical connection
It is more than the fusing point of ball (solder ball).However, there are the following problems：In high-temperature soldering processing procedure, because configuring half on top
Conductor packaging body or configuration lower part packaging body warping phenomenon (warpage) and at the joint portion of two semiconductor package bodies
Occur then bad；Or after welding processing procedure, soldered ball generates cracking (crack).
[existing technical literature]
[patent document]
Korean Patent Laid the 2010-0121231st (2010.11.17.)
Korean Patent Laid the 2013-0116100th (2013.10.23.)
Invention content
[the invention project to be solved]
The present invention is proposed to solve necessity as described above, and it is an object of the present invention to provide one kind can be reduced because of the second half
Second semiconductor package body caused by conductor packaging body or the warping phenomenon of the first semiconductor package body and the first semiconductor packages
Then the manufacturing method of the stack-up type semiconductor package body that is bad or leading to the problem of cracking at the joint portion of body.
[means to solve the problem]
To reach the purpose the present invention stack-up type semiconductor package body manufacturing method manufacturing the first half
Conductor packaging body and the second semiconductor package body are with by between first semiconductor package body and the second semiconductor package body
The electrical connection of packaging body connection terminal mode stack-up type semiconductor package body made of lamination up and down, the stack-up type semiconductor
The manufacturing method of packaging body is characterized in that comprising the following steps：(a) the step of preparing packaging body assembly, the packaging body group
Dress body is be interposed between first semiconductor package body and second semiconductor package body to by described first
It, will in the state of solid and the packaging body connection terminal that semiconductor package body is engaged with second semiconductor package body
First semiconductor package body is combined into second semiconductor package body；(b) make direct contact heater and the envelope
The one side contact of the second semiconductor package body of body assembly is filled, the direct contact heater is remained with the set time makes institute
It states the hardening temperature of solid hardening and the solid is made to harden；And (c) make the direct contact heater and described second
In the state of the one side contact of semiconductor package body, the direct contact heater is remained with the set time makes the packaging body
The welding temperature of connection terminal melting and utilize the packaging body connection terminal weld first semiconductor package body with it is described
Second semiconductor package body.
[The effect of invention]
The manufacturing method of the stack-up type semiconductor package body of the present invention is utilized and is interposed in the first semiconductor package body and second
Packaging body connection terminal between semiconductor package body welds the first semiconductor package body and the second semiconductor package body, while profit
The first semiconductor package body is led with the second half with the solid between the first semiconductor package body and the second semiconductor package body
Body packaging body engages.Therefore, can manufacture than merely with packaging body connection terminal by the first semiconductor package body and the second semiconductor
Packaging body engagement previous stack-up type semiconductor package body it is firmer and in structure superior stack-up type semiconductor packages
Body.
In addition, the manufacturing method of the stack-up type semiconductor package body of the present invention is led using direct contact heater pressing the second half
Body packaging body makes the solid between the first semiconductor package body and the second semiconductor package body harden and be securely engaged first
Semiconductor package body and the second semiconductor package body, therefore following problem can be reduced：As previous, in high-temperature soldering processing procedure
In, in two semiconductor packages due to warping phenomenon (warpage) of the first semiconductor package body or the second semiconductor package body
The joint portion of body occurs then bad；Or after welding processing procedure, it is cracked in generations such as packaging body connection terminals.
In addition, the manufacturing method of the stack-up type semiconductor package body of the present invention makes direct contact heater be assembled with packaging body
In the state of the upper surface contact of body, the temperature of High-speed Control direct contact heater thus can be rapid and be consecutively carried out to being situated between
Set the hardening processing procedure of the solid and packaging body connection terminal between the first semiconductor package body and the second semiconductor package body
And welding processing procedure.It is therefore possible to shorten manufacturing time, improves manufacture efficiency.
Description of the drawings
Fig. 1 is the manufacturing method for the stack-up type semiconductor package body for indicating an embodiment through the invention and the product manufactured
The side view of layer type semiconductor packaging body.
Fig. 2 to Fig. 6 is the manufacturer for the stack-up type semiconductor package body that one embodiment of the invention is indicated according to each step
The figure of method.
Fig. 7 is in hardening processing procedure in the manufacturing process of stack-up type semiconductor package body shown in Fig. 2 and welding processing procedure,
Indicate the temperature of direct contact heater and the curve graph (graph) of pressure change.
Reference sign：
10：Stack-up type semiconductor package body；
15：Packaging body assembly；
20：First semiconductor package body；
21：First encapsulation structure base board；
22：First chip；
23：External connection terminals；
24：First sealing material；
25、26、36、37：Terminal pad；
27、38：Chip connection terminal；
30：Second semiconductor package body；
31：Second encapsulation structure base board；
32、33：Second chip；
34：Packaging body connection terminal；
35：Second sealing material；
40：Adhesion agent layer；
45：Solid；
115：Coaster；
120：Loader；
130：Solid distributor；
140：Assembling loader；
150：Heating unit；
151：Direct contact heater；
152：Contact surface；
153：Adsorption hole；
154：Stomata；
155：Temperature sensor；
156：Supply unit；
158：Heater cooling unit；
159：Coolant jacket；
160：Cooling flowing path；
161：Inflow entrance；
162：Outlet；
163：Cooling medium feeder；
165：Elevating mechanism；
167：Pressure sensor；
169：Controller；
170：Inspection unit；
T1、T2、T3、T4、T5、T6、T7、t1、t2、t3、t4、t5：Time.
Specific implementation mode
Hereinafter, with reference to attached drawing, the manufacturing method of the stack-up type semiconductor package body of the present invention is illustrated in detail.
Fig. 1 is the manufacturing method for the stack-up type semiconductor package body for indicating an embodiment through the invention and the product manufactured
The side view of layer type semiconductor packaging body, Fig. 2 to Fig. 6 are to indicate that the stack-up type of one embodiment of the invention is partly led according to each step
The figure of the manufacturing method of body packaging body.
As shown in Figure 1, the manufacturing method of the stack-up type semiconductor package body of one embodiment of the invention is manufacturing second
The lamination by way of being electrically connected with the first semiconductor package body 20 packaging body connection terminal 34 of semiconductor package body 30 arrives
Stack-up type semiconductor package body 10 made of in first semiconductor package body 20.The system of this stack-up type semiconductor package body
The method of making can solve the problems, such as follows：In previous high-temperature soldering processing procedure, because of the first semiconductor package body or the second semiconductor package
It fills the warping phenomenon (warpage) of body and occurs at the joint portion of two semiconductor package bodies then bad；Or in welding processing procedure
Afterwards, it is cracked in generations such as soldered balls.
Referring to Fig.1, the manufacturing method of stack-up type semiconductor package body through this embodiment and the stack-up type that manufactures partly are led
Body packaging body 10 includes the first semiconductor package body 20, the second semiconductor package body 30 and adhesion agent layer (layer) 40.
First semiconductor package body 20 includes the first encapsulation structure base board 21, the first chip 22, external connection terminals 23 and the
One sealing material 24.First encapsulation structure base board 21 the upper surface and the lower surface have respectively terminal pad (terminal pad) 25,
26.First chip 22 is installed to the first encapsulation structure base board 21, is electrically connected with terminal pad 25 by chip connection terminal 27.It is external
Connection terminal 23 is electrically connected with the terminal pad 26 of the first encapsulation structure base board 21.External connection terminals 23 are to electric with other substrates etc.
Sub- device realizes electrical connection, can be made of soldered ball etc..In the inside of the first encapsulation structure base board 21, can have terminal pad 25 and end
The circuit layout that subpad 26 is electrically connected is not shown.First sealing material 24 is made of insulating properties material, to cover the first chip 22
Mode has the upside one side in the first encapsulation structure base board 21.
Second semiconductor package body 30 includes the second encapsulation structure base board 31, the second chip 32,33, packaging body connection terminal
34 and second sealing material 35.Has terminal pad 36,37 respectively in the upper surface and the lower surface of the second encapsulation structure base board 31.Second
Chip 32,33 is installed to the second encapsulation structure base board 31, is electrically connected with terminal pad 36 by chip connection terminal 38.Packaging body connects
Connecting terminal 34 is electrically connected with the terminal pad 37 of the second encapsulation structure base board 31.Packaging body connection terminal 34 is to be electrically connected to the first half to lead
The part of the terminal pad 25 of body packaging body 20 can be made of soldered ball etc..First semiconductor package body 20 and the second semiconductor packages
Body 30 is electrically connected by packaging body connection terminal 34.Packaging body connection terminal 34 is by welding processing procedure by the first semiconductor package
Dress body 20 is electrically connected with the second semiconductor package body 30, while by the first semiconductor package body 20 and the second semiconductor package body 30
It is fixed into the state be combineding with each other.In the inside of the second encapsulation structure base board 31, can have and terminal pad 36 and terminal pad 37 are electrically connected
The circuit layout (not shown) connect.Second sealing material 35 is made of insulating properties material, is matched in a manner of covering the second chip 32,33
Set the upside one side to the second encapsulation structure base board 31.
Adhesion agent layer 40 is interposed to the upper surface of the first sealing material 24 of the first semiconductor package body 20 and the second semiconductor
Between second encapsulation structure base board 31 of packaging body 30 and with packaging body connection terminal 34 make together the first semiconductor package body 20 with
Second semiconductor package body 30 is interconnected.Adhesion agent layer 40 is formed as follows：The solids 45 such as epoxy resin (epoxy)
With then in the state hardening of 30 the two of the first semiconductor package body 20 and the second semiconductor package body.The maximum energy of adhesion agent layer 40
It is enough to be formed with width corresponding with the width of 24 upper surface of the first sealing material of the first semiconductor package body 20.
As described above, packaging body connection terminal 34 makes the first semiconductor package body 20 and the second half also by welding processing procedure
Conductor packaging body 30 is interconnected, but the first semiconductor package body 20 and the second semiconductor package body formed by adhesion agent layer 40
30 bonding area is more than the first semiconductor package body 20 and the second semiconductor package body formed by packaging body connection terminal 34
30 bonding area, and the engaging force of the adhesion agent layer 40 is also greater than the engaging force of packaging body connection terminal 34.Therefore, pass through
The manufacturing method of the stack-up type semiconductor package body of the present invention and 10 ratio of stack-up type semiconductor package body that manufactures are merely with encapsulation
Body connection terminal combines the previous stack-up type semiconductor package body of the first semiconductor package body and the second semiconductor package body more
It is firm and better in structure.
This stack-up type semiconductor package body 10 can be manufactured by method shown in Fig. 2.With reference to Fig. 2 to Fig. 6, this implementation
The manufacturing method of the stack-up type semiconductor package body of example comprises the following steps：Prepare the first semiconductor package body 20 to lead with the second half
Made of about 30 lamination of body packaging body the step of packaging body assembly 15 ((a) step, Fig. 2~Fig. 4)；Make packaging body assembly
The step b step that 15 solid 45 hardens, Fig. 5；Encapsulation is welded using the packaging body connection terminal 34 of packaging body assembly 15
The step of first semiconductor package body 20 of body assembly 15 and the second semiconductor package body 30 ((c) step, Fig. 5)；And it checks
The step of being formed by stack-up type semiconductor package body (10) (Fig. 6).
First, the step of preparing packaging body assembly 15 comprises the following steps：Prepare the step of the first semiconductor package body 20
Suddenly ((a-1) step, Fig. 2)；The step of preparing the second semiconductor package body 30 ((a-2) step)；In the first semiconductor package body
The step of solid 45 are coated on 20 ((a-3) step, Fig. 3)；And by 30 lamination of the second semiconductor package body to the first semiconductor
Step ((a-4) step) on packaging body 20, Fig. 4).
As shown in Fig. 2, the first semiconductor package body 20 includes：First encapsulation structure base board 21；First chip 22, is installed to
First encapsulation structure base board 21；First sealing material 24 has in a manner of covering the first chip 22 and encapsulates structure base board 21 first
One side；And external connection terminals 23, have in a manner of being electrically connected with the first chip 22 in the first encapsulation structure base board 21
Another side.This first semiconductor package body 20 is identical as the content illustrated before, can pass through common semiconductor fabrication process
And it manufactures.First semiconductor package body 20 can be transplanted on manufacture after loader 120 etc. is carried to coaster (jigger) 115
Process position, in order to continuously carry out subsequently manufacturing processing procedure using automation equipment.
As shown in figure 4, the second semiconductor package body 30 includes：Second encapsulation structure base board 31；Second chip 32,33, peace
It is attached to the second encapsulation structure base board 31；Second sealing material 35 has in a manner of covering the second chip 32,33 in the second packaging body
The one side of substrate 31；And packaging body connection terminal 34, have in a manner of being electrically connected with the second chip 32,33 in the second encapsulation
The another side of structure base board 31.This first semiconductor package body 20 is identical as the content illustrated before, can be as the first semiconductor package
Dress body 20 is equally manufactured by common semiconductor fabrication process.
With reference to Fig. 3, after the first semiconductor package body 20 is carried to coaster 115, in the first semiconductor package body 20
First sealing material, 24 upper surface is coated with solid 45.As solid 45, there are the various of adhesion using epoxy resin etc.
Substance.Also, when being coated with solid 45, using the solid distributor 130 of various structures.
As shown in figure 4, after being coated with solid 45 in the first semiconductor package body 20, the second semiconductor package body 30 is accumulated
Packaging body assembly 15 is formed on layer to the first semiconductor package body 20.At this point, the second envelope of the second semiconductor package body 30
Dress structure base board 31 is contacted with the solid 45 in the first sealing material 24 for being coated on the first semiconductor package body 20.Also, second
The terminal pad (25 of the packaging body connection terminal 34 of semiconductor package body 30 and the second semiconductor package body 30；It contacts referring to Fig.1),
Thus the first semiconductor package body 20 is electrically connected with the second semiconductor package body 30 by packaging body connection terminal 34.As schemed
Show, it, can when by packaging body assembly 15 is formed on 30 lamination of the second semiconductor package body to the first semiconductor package body 20
Utilize assembling loader 140.
After forming packaging body assembly 15 by this method, adding to packaging body assembly 15 is executed as shown in Fig. 5
Hot processing procedure (hardening processing procedure and welding processing procedure).Packaging body assembly 15 can be transferred to heating to be fixed on the state of coaster 115
Process position.When carrying out heating processing to packaging body assembly 15, using heating unit (heating as shown in the figure
unit)150。
Heating unit 150 includes direct contact heater 151, heater cooling unit 158, elevating mechanism 165 and controller
169.Controller 169 controls direct contact heater 151, heater cooling unit 158 and elevating mechanism 165.It is this to add
Hot cell 150 can continuously perform in the state of so that direct contact heater 151 is contacted with packaging body assembly 15 to packaging body group
Fill the hardening processing procedure and welding processing procedure of body 15.
Direct contact heater 151 is arranged in a manner of liftable to the upside of packaging body assembly 15, in order to encapsulation
The one side of second semiconductor package body 30 of body assembly 15 contacts.Direct contact heater 151 has and the second semiconductor packages
The contact surface 152 of the upper surface contact of second sealing material 35 of body 30.Have to adsorb the second semiconductor package in contact surface 152
Fill the adsorption hole (hole) 153 of body 30.Adsorption hole 153 and has the coolant jacket (cooling in heater cooling unit 158
Jacket) stomata (air hole) 154 of 159 side connects.It is connected in stomata 154 to provide suction to adsorption hole 153
The vacuum distributor of power is not shown.Certainly, stomata 154 can also form the lateral surface of direct contact heater 151.
This direct contact heater 151 is inhaled with being contacted with 35 upper surface of the second sealing material of the second semiconductor package body 30
The state of attached second semiconductor package body 30, by the second semiconductor package body 30 to the first semiconductor package body 20 and the second half
Solid 45 and packaging body connection terminal 34 between conductor packaging body 30 are heated.In direct contact heater 151, temperature is set
Spend sensor (temperature sensor) 155.Temperature sensor 155 is set in a manner of being contacted with direct contact heater 151
It sets, detect the temperature of direct contact heater 151 and this detection information is transferred to controller 169.Direct contact heater 151 from
Supply unit 156 receives electric power and operates.Controller 169 receives the fever temperature of direct contact heater 151 from temperature sensor 155
The feedback (feedback) of degree and adjust the power supply to direct contact heater 151, thus control the heating of direct contact heater 151
Temperature.
As direct contact heater 151, using ceramic (ceramic) heater.Ceramic heater is generally configured with ceramics
Substrate and it is embedded to the ceramic substrate or the Resistive heating element fixed to the ceramic substrate.It is excellent because of ceramic masses
Different thermal conductivity and can be quickly transferred to configure in a manner of abutting with ceramic substrate by the heat that Resistive heating element generates
Target (target) substance.Certainly, direct contact heater 151 is in addition to ceramic heater, available with packaging body assembly 15
The various contacts that contacts and the solid 45 and packaging body connection terminal 34 of 15 centre of packaging body assembly can be heated
Heater.
Heater cooling unit 158 cools down direct contact heater 151 by thermal conductivity mode.Heater cooling unit 158 wraps
Contain：Coolant jacket 159 is arranged in a manner of being contacted with direct contact heater 151；And cooling medium feeder 163, with can be to
The mode of the cooling medium of the supply of coolant jacket 159 is connect with coolant jacket 159.Have in the inside of coolant jacket 159 and supplies from cooling medium
The cooling flowing path 160 that the cooling medium stream that feeder 163 supplies is moved.Cooling medium feeder 163 and inflow entrance 161 and outlet
162 connections, the inflow entrance 161 and outlet 162 have the lateral surface in coolant jacket 159 in a manner of spaced apart from each other.From cold
But the cooling medium that medium feeder 163 supplies is in the inflow entrance 161, cooling flowing path 160 and discharge for passing sequentially through coolant jacket 159
Mouthfuls 162 and after cooling down direct contact heater 151, be recycled to cooling medium feeder 163 again.Cooling medium is recovered in supply
After being cooled again to the cooling medium of device 163, coolant jacket 159 can be supplied again to.As cooling medium, using cooling water
The various cooling media such as the equal gases such as liquid or air.Certainly, heater cooling unit 158 is in addition to structure shown in figure,
Using the heater cooling unit for the various structures that can promptly cool down direct contact heater 151 by various modes.
Elevating mechanism 165 is arranged in a manner of being connect with direct contact heater 151, to make direct contact heater 151 exist
The upside of packaging body assembly 15 lifts.Elevating mechanism 165 makes direct contact heater 151 decline to packaging body assembly 15 and make
Direct contact heater 151 is contacted with the second semiconductor package body 30 of packaging body assembly 15.In addition, by being assembled to packaging body
15 side face contact formula heater 151 of body and so that direct contact heater 151 is fitted into packaging body assembly 15 with fixation pressure
Second semiconductor package body 30.
Pressure sensor 167 is set between elevating mechanism 165 and the coolant jacket 159 of heater cooling unit 158.Pressure
Sensor 167 detects direct contact heater 151 to the contact of the second semiconductor package body 30 and passes this detection information
It is defeated to arrive controller 169.Controller 169 receives direct contact heater 151 to the second semiconductor package body 30 from pressure sensor 167
Contact feedback and the side that can be contacted with the second semiconductor package body 30 with fixation pressure with direct contact heater 151
Formula controls the action of elevating mechanism 165.As pressure sensor 167, using dynamometer (load cell) etc..Pressure
Force snesor 167 can be arranged in addition to setting is arrived between elevating mechanism 165 and coolant jacket 159 as shown in the figure to contact
The various positions such as between formula heater 151 or direct contact heater 151 and elevating mechanism 165.
Heating processing by the packaging body assembly 15 of the progress of this heating unit 150 is specific as follows.
When packaging body assembly 15 is located at the lower part of direct contact heater 151, controller 169 to elevating mechanism 165 and
Supply unit 156 is controlled and makes the second close of the contact surface 152 of direct contact heater 151 and the second semiconductor package body 30
The contact of 35 upper surface of material is sealed, direct contact heater 151 is made to heat up.In direct contact heater 151 and the second semiconductor package body 30
When connecting, because having in the adsorption capacity of the adsorption hole 153 of the contact surface 152 of direct contact heater 151 due to direct contact heater 151
It is adsorbed with the second semiconductor package body 30.First, controller 169, which makes the heating temperature of direct contact heater 151 rise to, to make
Hardening temperature that the solid 45 of packaging body assembly 15 hardens and so that the solid 45 of packaging body assembly 15 is hardened.It is specific and
Speech, with reference to Fig. 7, controller 169 makes the temperature of direct contact heater 151 be warming up to less than hardening temperature in set time T1
Preheating temperature ((b-1) step), and maintained during set time T2.Make direct contact heater 151 and the first semiconductor package
The temperature of direct contact heater 151 is set promptly to be warming up in set time T3 firmly in the state of the upper surface contact of dress body 20
Change temperature ((b-2) step), later with this hardening temperature is kept fixed time T4 and makes the solid of packaging body assembly 15
45 hardening ((b-3) step).
If making the temperature of direct contact heater 151 first be warming up to after preheating temperature by this method to be periodically warming up to firmly
Change temperature, rather than hardening temperature is rapidly warming up to from room temperature, then can make direct contact heater 151 and the first semiconductor packages
It is promptly warming up to hardening temperature after the upper surface contact of body 20, so as to shorten hardening processing time, can be reduced to contact
Heater 151 causes the problem of burden.Herein, preheating temperature is not limited to temperature shown in curve graph, may be set to be less than
The various temperature of hardening temperature.Also, can also start before direct contact heater 151 is contacted with the first semiconductor package body 20 into
The preheating of row direct contact heater 151.
Controller 169 controls the heating temperature of direct contact heater 151 by this method, and control elevating mechanism 165 and
Adjust contact of the direct contact heater 151 to the second semiconductor package body 30.That is, such as the curve graph of Fig. 7, controller 169
Make direct contact heater 151 to the contact of the second semiconductor package body 30 in the set time by elevating mechanism 165
After rising to first pressure in t1, it is kept fixed time t2.Therefore, 151 one side of direct contact heater is with first pressure pressing the
Solid 45 is heated to hardening temperature by two semiconductor package bodies 30 by the second semiconductor package body 30 on one side.It is coated with as a result,
Solid 45 between the first semiconductor package body 20 and the second semiconductor package body 30 of packaging body assembly 15 is largo
It extends and steadily touches and harden with both the first semiconductor package body 20 and the second semiconductor package body 30.
Then, the heating temperature of direct contact heater 151 is remained hardening temperature by controller 169 with set time T4
Afterwards, the welding temperature for making the packaging body connection terminal 34 of packaging body assembly 15 melt promptly is warming up in set time T5
Degree.Then, the heating temperature of direct contact heater 151 is remained into welding temperature with set time T6 and makes packaging body connecting pin
Son 34 melts.At this point, the terminal pad 25 of packaging body connection terminal 34 and the first semiconductor package body 20 fuses, thus packaging body group
The first semiconductor package body 20 and the second semiconductor package body 30 for filling body 15 are welded by packaging body connection terminal 34.
Controller 169 makes the heating temperature of direct contact heater 151 be warming up to welding temperature, and to elevating mechanism 165
It is controlled and direct contact heater 151 is made to rise to the contact of the second semiconductor package body 30 in set time t3
Second pressure.151 one side of direct contact heater presses the second semiconductor package body 30 with second pressure during set time t4,
Make packaging body connection terminal 34 and by the way that the second semiconductor package body 30 heats packaging body connection terminal 34 on one side
Semiconductor packaging body 20 fuses.
The hardening processing procedure and welding processing procedure carried out by using this direct contact heater 151, forms following stack-up type
Semiconductor package body 10：First semiconductor package body 20 and the second semiconductor package body 30 are connected by the packaging body between its etc.
Terminal 34 and be electrically connected, while being securely engaged by adhesion agent layer 40.If hardening processing procedure and welding processing procedure terminate, control
Device 169 processed controls elevating mechanism 165 and makes direct contact heater 151 far from the second semiconductor package in set time t5
Fill the second sealing material 35 of body 30.Also, at the same time, stops to apply electric power to direct contact heater 151, heater is made to cool down
Unit 158 operates and cools down direct contact heater 151.That is, making the cooling running of medium feeder 163 and making cooling medium to combination
It is flowed in the coolant jacket 159 of direct contact heater 151, to make direct contact heater 151 in the set time by thermal conductivity mode
Preheating temperature is promptly warming up in T7.The reason is that direct contact heater 151 can be made to be assembled immediately to brand-new packaging body
Body 15 executes subsequent heat processing procedure.
In the figure 7, it is about 50 degree to be expressed as preheating temperature, and hardening temperature is about 150 degree, and welding temperature is about 250 degree, but
The temperature of this direct contact heater 151 can realize various changes according to type of solid 45 or packaging body connection terminal 34 etc.
More.Also, the heating-up time of direct contact heater 151 or temperature hold-time can also realize various changes, direct contact heater
The contact of 151 pair of second semiconductor package body 30 can also realize various changes.
As shown in fig. 6, the stack-up type semiconductor package body 10 formed by heating unit 150 is shifted into inspection unit
170 and via check processing procedure be divided into non-defective unit or defective products.It is available to check stack-up type semiconductor package as inspection unit 170
Fill the inspection unit of the well known various structures of electrical characteristics of body 10 etc..
It is interposed in the first semiconductor package as described above, the manufacturing method of the stack-up type semiconductor package body of the present embodiment utilizes
It fills the packaging body connection terminal 34 between body 20 and the second semiconductor package body 30 and welds the first semiconductor package body 20 and the
Two semiconductor package bodies 30, while being connect the first semiconductor package body 20 and the second semiconductor package body 30 using solid 45
It closes.Therefore, it can manufacture than engaging the first semiconductor package body with the second semiconductor package body merely with packaging body connection terminal
Previous stack-up type semiconductor package body it is firmer and in structure superior stack-up type semiconductor package body 10.
In addition, pressing the second semiconductor package body 30 using direct contact heater 151 and making the first semiconductor package body 20
Solid 45 between the second semiconductor package body 30 hardens, thus by the first semiconductor package body 20 and the second semiconductor package
Dress body 30 is securely engaged, therefore can reduce following problem：As previous, in high-temperature soldering processing procedure, because of the first semiconductor
Packaging body or the warping phenomenon (warpage) of the second semiconductor package body and connect at the joint portion of two semiconductor package bodies
It bad；Or after welding processing procedure, it is cracked in generations such as packaging body connection terminals.
In addition, in the state of making the upper surface of direct contact heater 151 and the second semiconductor package body 30 contact, pass through
The temperature and pressure of supply unit 156 and elevating mechanism 165 and High-speed Control direct contact heater 151, thus can rapid and company
The solid 45 and packaging body to being interposed between the first semiconductor package body 20 and the second semiconductor package body 30 are executed continuously
The hardening processing procedure and welding processing procedure of connection terminal 34.It is therefore possible to shorten manufacturing time, improves manufacture efficiency.
In addition, after carrying out the heating processing using direct contact heater 151, it is rapid using heater cooling unit 158
The mode that ground cools down direct contact heater 151 and makes it can be immediately performed next heating processing is standby, and operation thus can be improved
Efficiency.
More than, enumerating preferred example, the present invention is described, but the scope of the present invention be not limited to before institute
The embodiment of explanation.
For example, being expressed as being coated with solid 45 in the upper surface of the first semiconductor package body 20 and connecing described in the figure
The second semiconductor package body of lamination 30 in agent 45, but solid can be also applied to the lower surface of the second semiconductor package body,
The first semiconductor described in lamination in a manner of being interposed solid between the first semiconductor package body and the second semiconductor package body
Packaging body and second semiconductor package body.
In addition, being expressed as in the figure to be provided with packaging body connection terminal in the lower surface of the second semiconductor package body 30
34 state, the second semiconductor package body of lamination 30 in the first semiconductor package body 20, but also can be with packaging body connecting pin
Son is mounted on the state in the first semiconductor package body, the second semiconductor package body of lamination in the first semiconductor package body.
In addition, being expressed as the lamination second in the first semiconductor package body 20 for have external connection terminals 23 in the figure
Semiconductor package body 30, but stack-up type semiconductor package body can be also manufactured as follows：With external connection terminals towards upper
The mode of side will be provided in the first semiconductor packages volume layer to the second semiconductor package body of the external connection terminals.
In addition, the temperature of direct contact heater 151 is expressed as periodically becoming hardening temperature from preheating temperature in the figure
Degree becomes welding temperature from hardening temperature, becomes preheating temperature from welding temperature, but the Temperature Distribution of direct contact heater
(profile) various designs can be realized according to characteristic of solid or packaging body connection terminal etc..In addition, direct contact heater
The pressure distribution of second semiconductor package body is also not limited to as shown in the figure.
In addition, being expressed as executing each manufacture to first semiconductor package body 20 being positioned on coaster 115 in the figure
Processing procedure, but be alternatively the pallet (tray) equipped with multiple semiconductor package bodies transferred or be transported to each manufacture process position and
Multiple semiconductor package bodies to being mounted in pallet execute each manufacture processing procedure.
In addition, the manufacturing method of the stack-up type semiconductor package body of the present invention can pass through transfer unit along transfer path on one side
The first semiconductor package body or the second semiconductor package body are transferred, continuously performs loading on transfer unit on one side, solid applies
Cloth, semiconductor packages volume layer, heating and inspection.Certainly or the first semiconductor package body or the second semiconductor package body,
Packaging body assembly or stack-up type semiconductor package body are transported to each process position and execute each processing procedure in different positions.
In addition, the manufacturing method of the stack-up type semiconductor package body of the present invention, which is also applicable in from outside, receives packaging body group
The technology of heating processing is only executed after dress body.
Claims (9)
1. a kind of manufacturing method of stack-up type semiconductor package body, makes the first semiconductor package body and the second semiconductor package body
By way of being electrically connected with the packaging body connection terminal between the second semiconductor package body first semiconductor package body
The manufacturing method of upper and lower lamination, the stack-up type semiconductor package body is characterized in that comprising the following steps：
(a) the step of preparing packaging body assembly, the packaging body assembly is in first semiconductor package body and institute
It states and has been interposed between the second semiconductor package body to by first semiconductor package body and second semiconductor package body
In the state of the solid of engagement and the packaging body connection terminal, first semiconductor package body and described the second half are led
Body packaging body is combined into, and (a) step comprises the following steps：
(a-1) the step of preparing first semiconductor package body, first semiconductor package body include the first packaging body base
Plate, has in a manner of covering first chip described first the first chip for being installed to the first encapsulation structure base board
It encapsulates the first sealing material of the one side of structure base board and has in the first packaging body base in a manner of being electrically connected with first chip
The external connection terminals of the another side of plate；
(a-2) the step of preparing second semiconductor package body, second semiconductor package body include the second packaging body base
Plate, has in a manner of covering second chip described second the second chip for being installed to the second encapsulation structure base board
It encapsulates the second sealing material of the one side of structure base board, have in second packaging body in a manner of being electrically connected with second chip
The packaging body connection terminal of the another side of substrate；
(a-3) the step of being coated with the solid in the first sealing material of first semiconductor package body；And
(a-4) it encapsulates structure base board with the second of second semiconductor package body and is coated on first semiconductor package body
The mode of solid contact in first sealing material is by the second semiconductor packages volume layer to first semiconductor
Step on packaging body；
(b) make contacting on one side for direct contact heater and the second semiconductor package body of the packaging body assembly, connect described
The step of touch heater is remained the hardening temperature for making the solid hardening with the set time and the solid is made to harden；
And
(c) it in the state of making the direct contact heater and the one side of second semiconductor package body contacts, is connect described
Touch heater is remained the welding temperature for making the packaging body connection terminal melting with the set time and utilizes the packaging body
Connection terminal welds the step of first semiconductor package body is with second semiconductor package body.
2. the manufacturing method of stack-up type semiconductor package body according to claim 1, it is characterised in that：
(b) step is using the direct contact heater with first pressure presses second semiconductor package body and passes through institute
The second semiconductor package body is stated to heat the solid.
3. the manufacturing method of stack-up type semiconductor package body according to claim 1 or 2, it is characterised in that：
(c) step is using the direct contact heater with second pressure presses second semiconductor package body and passes through institute
The second semiconductor package body is stated to heat the packaging body connection terminal.
4. the manufacturing method of stack-up type semiconductor package body according to claim 1, which is characterized in that (b) step
It comprises the following steps：
(b-1) the step of making the direct contact heater be warming up to the preheating temperature less than the hardening temperature；
(b-2) in the state of so that the one side of the direct contact heater and second semiconductor package body is contacted, from described
Preheating temperature is warming up to the step of hardening temperature；And
(b-3) the step of direct contact heater being remained into the hardening temperature with the set time.
5. the manufacturing method of stack-up type semiconductor package body according to claim 1, it is characterised in that：
(b) step makes institute in the state that the direct contact heater to be cooled to the temperature less than the hardening temperature
It states direct contact heater to contact with the one side of second semiconductor package body and be warming up to the hardening temperature, later with described
Hardening temperature is kept fixed the time.
6. the manufacturing method of stack-up type semiconductor package body according to claim 1, it is characterised in that also include following step
Suddenly：
(d) after (c) step, the direct contact heater is cooled to the step of the hardening temperature or less.
7. the manufacturing method of stack-up type semiconductor package body according to claim 6, it is characterised in that：
(d) step makes to have the coolant jacket of cooling flowing path to be contacted with the direct contact heater, passes through the cooling flowing path
And the cooling medium that circulates, to cool down the direct contact heater in a manner of thermal conductivity.
8. the manufacturing method of stack-up type semiconductor package body according to claim 1, it is characterised in that：
In (b) step and (c) step, make the one of the direct contact heater and second semiconductor package body
Face contacts, while the direct contact heater being made to be adsorbed with second semiconductor package body.
9. the manufacturing method of stack-up type semiconductor package body according to claim 1, it is characterised in that：In (b) step
In rapid and described (c) step, the direct contact heater is ceramic heater.
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| KR1020140160693A KR101619455B1 (en) | 2014-11-18 | 2014-11-18 | Method for Manufacturing Package On Package |
| KR10-2014-0160693 | 2014-11-18 |
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| CN108328562B (en) * | 2018-02-28 | 2024-05-17 | 山东盛芯电子科技有限公司 | Packaging method of pressure sensor packaging structure |
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| CN1452245A (en) * | 2002-04-19 | 2003-10-29 | 富士通株式会社 | Semiconductor device and method for manufacturing the same |
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| KR100398314B1 (en) * | 2001-07-19 | 2003-09-19 | 한국과학기술원 | High Adhesion Triple layered anisotropic conductive adhesive film |
| KR100733208B1 (en) * | 2004-10-11 | 2007-06-27 | 삼성전기주식회사 | Semiconductor package using filp-chip mounting technology |
| KR20070034200A (en) * | 2005-09-23 | 2007-03-28 | 삼성전자주식회사 | Laminated package having adhesive layer and method for manufacturing same |
| JP2011146408A (en) * | 2008-03-28 | 2011-07-28 | Nec Corp | Wiring board, semiconductor package, and method of manufacturing the wiring board |
| KR101208028B1 (en) * | 2009-06-22 | 2012-12-04 | 한국전자통신연구원 | Method of fabricating a semiconductor package and the semiconductor package |
| JP5860431B2 (en) * | 2013-04-25 | 2016-02-16 | 東京エレクトロン株式会社 | Joining apparatus, joining system, and joining method |
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| KR101619455B1 (en) | 2016-05-11 |
| TW201620082A (en) | 2016-06-01 |
| CN105609492A (en) | 2016-05-25 |
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