JP2021144974A - Electronic device, electronic apparatus, and mobile body - Google Patents

Abstract

To provide an electronic device, an electronic apparatus, and a mobile body with excellent reliability.SOLUTION: An electronic device includes a semiconductor device 10 including a pad 12, a base 31 where the semiconductor device 10 is fixed and a wire 29 is provided, and a bump 40 for electrically connecting the pad 12 and the wire 29. The semiconductor device 10 includes a semiconductor substrate 11 one surface 11a of which is provided with the pad 12, an inductor 13 disposed on a surface 11a of the semiconductor substrate 11, an insulating layer 14 covering the inductor 13 and formed on the surface 11a of the semiconductor substrate 11 so that the pad 12 is exposed, a resin layer 15 disposed on a surface of the insulating layer 14 on an opposite side of the semiconductor substrate 11, and a rearrangement wire 16 including a first part 17 connected electrically to the pad 12 and a second part 18 disposed on a surface of the resin layer 15 on an opposite side of the insulating layer 14. The second part 18 and the wire 29 of the base 31 are connected with the bump 40.SELECTED DRAWING: Figure 4

Description

The present invention relates to electronic devices, electronic devices, and mobile objects.

An oscillator that oscillates an oscillator such as a crystal oscillator and outputs a signal of a desired frequency is widely used in various electronic devices and systems. In order to meet the demand for miniaturization, an oscillator in which an oscillator and an integrated circuit element (IC) for oscillating the oscillator are laminated is known. For example, Patent Document 1 describes an oscillator having a structure in which an oscillator housed in a ceramic package is mounted on an IC including a voltage-controlled oscillator circuit including an inductor. Further, Patent Document 2 describes an oscillator having a structure in which an IC is mounted by FCB (Flip-chip Bonding) in a ceramic package in order to reduce the height.

JP-A-2019-97149 JP-A-2017-55280

However, as in Patent Document 1, when an inductor for a voltage control oscillation circuit is configured on an IC, it is conceivable to increase the thickness of the aluminum wiring on the uppermost layer of the IC. The thicker the aluminum, the smaller the series resistance and the better the Q value of the inductor. Further, as the distance between the inductor and the IC increases, the parasitic capacitance and the eddy current loss generated in the IC become smaller, so that the inductor is composed of the uppermost layer wiring. As a result, the aluminum PAD of the IC equipped with the inductor becomes thick. When the IC provided with the thick aluminum PAD is FCB mounted as in Patent Document 2, there is a problem that the aluminum PAD may be crushed and deformed by the pressure at the time of mounting.

The electronic device includes a semiconductor device having a pad, a base on which the semiconductor device is fixed and provided with wiring, and a bump for electrically connecting the pad of the semiconductor device and the wiring of the base. The semiconductor device covers the semiconductor substrate on which the pad is provided on one surface, an inductor formed by metal wiring and arranged on the one surface of the semiconductor substrate, and the inductor. An insulating layer formed on one surface of the semiconductor substrate so that the pad is exposed, a resin layer arranged on the surface of the insulating layer opposite to the semiconductor substrate, and the pad. A rearranged wiring having a first portion electrically connected and a second portion of the resin layer located on a surface opposite to the insulating layer of the resin layer, the second portion and the base. The wiring is joined by the bump.

The electronic device includes the above-mentioned electronic device.

The mobile body comprises the electronic device described above.

The plan view which shows the schematic structure of the electronic device which concerns on 1st Embodiment. FIG. 1 is a cross-sectional view taken along the line AA of FIG. The plan view which shows the schematic structure of the semiconductor device. FIG. 3 is a cross-sectional view taken along the line BB of FIG. The plan view which shows the schematic structure of the semiconductor device. The block diagram which shows the schematic structure of an electronic device. The cross-sectional view which shows the schematic structure of the semiconductor device of the electronic device which concerns on 2nd Embodiment. The perspective view which shows the schematic structure of the smartphone as the electronic device which comprises the electronic device which concerns on 3rd Embodiment. FIG. 5 is a perspective view showing a schematic configuration of an automobile as a mobile body including an electronic device according to a fourth embodiment.

1. 1. First Embodiment First, an oscillator 1 will be taken as an example of the electronic device according to the first embodiment, and will be described with reference to FIGS. 1 to 6.
Note that FIG. 1 illustrates a state in which the lid 39 is removed for convenience of explaining the internal configuration of the oscillator 1. Further, in FIG. 2, the cross section of the semiconductor device 10 is shown in FIG. 4 for convenience of explaining the mounting structure of the semiconductor device 10.

For convenience of explanation, FIGS. 1 to 5 show the X-axis, the Y-axis, and the Z-axis as three axes orthogonal to each other. Further, the direction along the X axis is the "X direction", the direction along the Y axis is the "Y direction", the direction along the Z axis is the "Z direction", and the direction of the arrow is the plus direction. Further, the positive direction in the Z direction will be described as "up", and the negative direction in the Z direction will be described as "down".

As shown in FIGS. 1 and 2, the oscillator 1 according to the present embodiment includes a semiconductor device 10, a crystal oscillator 20 as a vibrating element, a package 30 containing the semiconductor device 10 and the crystal oscillator 20, and a package 30. including.

The semiconductor device 10 is an integrated circuit device called an IC (Integrated Circuit). For example, the semiconductor device 10 is an IC manufactured by a semiconductor process, and is a semiconductor chip in which a circuit element is formed on a semiconductor substrate.

The crystal oscillator 20 is a piezoelectric vibration element that generates mechanical vibration by an electric signal, and can be realized by a crystal substrate. Specifically, the crystal oscillator 20 can be realized by a crystal substrate having a cut angle of AT cut, SC cut, or the like that slides and vibrates in thickness. The oscillator 1 having the crystal oscillator 20 may be an SPXO (Simple Packaged Crystal Oscillator), a temperature-compensated oscillator (TCXO) not provided with a constant temperature bath, or a constant temperature tank type oscillator (OCXO) provided with a constant temperature bath. ) May be.

The package 30 includes, for example, a base 31 formed of ceramic or the like, a bonding material 32 formed on the upper surface of the base 31, and a mounting terminal 33 formed on the lower surface of the base 31, and a storage space inside the base 31. Has S. The semiconductor device 10 and the crystal oscillator 20 are accommodated in this accommodation space S. The accommodation space S is airtightly sealed by joining the lid 39 to the upper surface of the base 31 via a bonding material 32, and _{an inert gas such as nitrogen (N 2} ), helium (He), or argon (Ar) is released. It is in an enclosed atmospheric pressure state or a decompression state that is close to vacuum. With this package 30, the semiconductor device 10 and the crystal oscillator 20 can be suitably protected from impact, dust, heat, humidity and the like.

As shown in FIG. 2, the base 31 has a first recess 34 that opens on the upper surface and a second recess 36 that opens on the bottom surface 35 of the first recess 34.
A connection terminal 38 is arranged on the bottom surface 35 of the first recess 34, and the crystal oscillator 20 is fixed on the connection terminal 38 by a joining member 42 such as a conductive adhesive.
Wiring 29 is provided on the bottom surface 37 of the second recess 36, and the semiconductor device 10 is fixed on the wiring 29 by the conductive bumps 40. The bump 40 is a metal bump made of metal, and is, for example, a gold bump, a silver bump, a copper bump, or the like.

The connection terminal 38 provided on the bottom surface 35 of the first recess 34 is electrically connected to the wiring 29 provided on the bottom surface 37 of the second recess 36 by a through wiring or internal wiring (not shown) provided on the base 31. ing. Further, some of the wirings 29 provided on the bottom surface 37 of the second recess 36 are electrically connected to the mounting terminals 33 provided on the lower surface of the base 31 by means of through wiring or internal wiring provided on the base 31 (not shown). It is connected.

The crystal oscillator 20 is provided on both the upper and lower main surfaces of the crystal substrate 21 as a piezoelectric body, the excitation electrodes 22 provided on both the upper and lower main surfaces of the crystal substrate 21, and one end of the crystal substrate 21 in the X direction. The electrode pad 24 is included, and a lead electrode 23 that electrically connects the excitation electrode 22 and the electrode pad 24 is included. The electrode pads 24 provided on both the upper and lower main surfaces of the crystal substrate 21 are side electrodes (not shown), and the electrode pads 24 on the upper surface and the electrode pads 24 on the lower surface are electrically connected. The excitation electrode 22 provided on the upper surface of the crystal substrate 21 is electrically connected to the electrode pad 24 via the lead electrode 23 provided on the upper surface of the crystal substrate 21, and the excitation electrode 22 provided on the lower surface of the crystal substrate 21. The 22 is electrically connected to the electrode pad 24 via a lead electrode 23 provided on the lower surface of the crystal substrate 21. Therefore, it is electrically connected to the semiconductor device 10 via the connection terminal 38 or the like, and is electrically connected to the oscillation circuit 50 provided in the semiconductor device 10 described later, and the crystal oscillator by the oscillation circuit 50. 20 oscillation operations are possible.

As shown in FIGS. 3 and 4, the semiconductor device 10 includes a semiconductor substrate 11 on which an oscillation circuit 50 and a PLL circuit 60 are formed, a pad 12, an inductor 13, an insulating layer 14, and a resin layer 15. The rearranged wiring 16 and the like are included. The semiconductor device 10 is fixed on the base 31 by bumps 40 with the surface on which the rearranged wiring 16 is arranged facing the base 31 side. Further, the semiconductor device 10 is arranged between the crystal oscillator 20 and the base 31, and is arranged so as to overlap the crystal oscillator 20 in a plan view from the Z direction. Therefore, it is possible to obtain a small oscillator 1 having a small XY surface area.

The semiconductor substrate 11 is formed with an oscillation circuit 50 that oscillates the crystal oscillator 20 and a PLL circuit 60 that operates using the oscillation signal of the oscillation circuit 50 as a reference signal. Further, although not shown, the semiconductor substrate 11 is formed with a plurality of wiring layers for electrically connecting a plurality of circuit elements constituting the oscillation circuit 50 and the PLL circuit 60.

A plurality of pads 12 are arranged on one surface 11a of the semiconductor substrate 11, and one of them is an output pad to which a clock signal from the PLL circuit 60 is output.

The inductor 13 is formed of the same metal wiring as aluminum (Al) as the pad 12, and is arranged on one surface 11a of the same semiconductor substrate 11 as the pad 12. That is, the inductor 13 is composed of metal wiring provided in the first wiring layer, which is the wiring layer closest to the base 31 than the plurality of wiring layers described above. Therefore, by mounting the semiconductor device 10 on the base 31 by FCB, it is possible to secure a distance between the excitation electrode 22 of the crystal oscillator 20 and one surface 11a of the semiconductor substrate 11 on which the inductor 13 is formed. The magnetic field of the inductor 13 blocked by the excitation electrode 22 is reduced, and the Q value of the inductor 13 can be improved.

The thickness of the metal wiring of the inductor 13 is 1 μm or more and 10 μm or less, which reduces the series resistance of the inductor 13 and improves the Q value, preferably 2 μm, which makes it easier to control the film thickness and shortens the film formation time. It is 6 μm or less. Further, the inductor 13 is electrically connected to a voltage controlled oscillation circuit 63 provided in the PLL circuit 60, which will be described later, forms a circuit configuration of an LC oscillation circuit, and oscillates as a voltage controlled oscillator (VCO). do.

The insulating layer 14 such as an oxide film is formed on one surface 11a of the semiconductor substrate 11 so as to cover the inductor 13 and expose the pad 12.
The resin layer 15 such as a polyimide resin is arranged on the surface of the insulating layer 14 opposite to the semiconductor substrate 11.

The number of the rearranged wirings 16 is the same as that of the pads 12, and the first portion 17 electrically connected to the pads 12 and the second portion 18 arranged on the surface of the resin layer 15 opposite to the insulating layer 14 are arranged. And have. The rearranged wiring 16 provided at the position of the pad 12 on which the clock signal from the PLL circuit 60 is output is used to reduce the interference between the oscillation signal of the oscillation circuit 50 and the clock signal of the PLL circuit 60. , It is arranged at a position that does not overlap with the oscillation circuit 50 in a plan view from the Z direction. Further, the rearranged wiring 16 is mainly made of copper (Cu), and the surface to which the bump 40 is joined is plated with nickel (Ni) / palladium (Pd) / gold (Au).

The semiconductor device 10 is fixed on the base 31 by joining the second portion 18 of the rearranged wiring 16 formed on the resin layer 15 with the conductive bumps 40. Further, the pad 12 of the semiconductor device 10 is electrically connected to the wiring 29 provided on the base 31 via the rearranged wiring 16 and the bump 40.

In the oscillator 1 of the present embodiment, since the second portion 18 of the rearranged wiring 16 to which the bumps 40 are bonded is formed on the resin layer 15, the pressure when FCB is mounted on the base 31 of the semiconductor device 10 is a semiconductor. Since it does not participate in the pad 12 of the device 10, deformation or breakage of the pad 12 can be suppressed. Further, the resin layer 15 can absorb the stress generated through the bump 40 due to the change in the environmental temperature and the stress and impact applied to the semiconductor device 10 at the time of mounting the FCB due to the difference in the linear expansion coefficient between the base 31 and the semiconductor device 10. It is possible to make the semiconductor device 10 less likely to be damaged.

Further, as shown in FIG. 3, a plurality of rearranged wirings 16 are provided, and in all the rearranged wirings 16, each second portion 18 is closer to the center O of the semiconductor device 10 than the first portion 17. It is placed in position. That is, the distance W1 between the second portion 18 and the center O of the semiconductor device 10 is smaller than the distance W2 between the first portion 17 and the center O of the semiconductor device 10 in a plan view from the Z direction. Therefore, since the positions where the base 31 and the bump 40 are joined are close to each other, the influence of stress caused by the change in the environmental temperature can be reduced due to the difference in the coefficient of linear expansion between the base 31 and the semiconductor device 10. As shown in FIG. 3, the center O of the semiconductor device 10 is the intersection of two diagonal lines L1 and L2 connecting the two farthest corners when the semiconductor device 10 is rectangular. When the semiconductor device 10 is not rectangular, the center of gravity of the semiconductor device 10 is set as the center O.

Further, the rearranged wiring 16 is arranged at a position that does not overlap with the inductor 13 in a plan view from the Z direction. Therefore, the parasitic capacitance generated between the rearranged wiring 16 and the inductor 13 can be reduced.

Further, as shown in FIG. 5, when a virtual straight line L3 located equidistant W3 from the rearranged wiring 16 arranged so as to sandwich the inductor 13 is defined, the inductor 13 is virtual in a plan view from the Z direction. It is arranged at a position intersecting the straight line L3. Therefore, it is possible to reduce the influence of the parasitic capacitance generated between the rearranged wiring 16 sandwiching the inductor 13 and the inductor 13.

Next, the circuit configuration of the semiconductor device 10 included in the oscillator 1 of the present embodiment will be described with reference to FIG.
As shown in FIG. 6, the semiconductor device 10 has an oscillation circuit 50 and a PLL circuit 60, and the oscillation circuit 50 and the crystal vibration are transmitted through two pads 12 provided on one surface 11a of the semiconductor substrate 11. The child 20 is electrically connected, and the crystal oscillator 20 is oscillated by the oscillation circuit 50. By synchronizing the reference clock signal RFCK output from the oscillation circuit 50 with the feedback clock signal FBCK divided by 1 / N in the PLL circuit 60, a clock signal CKQ having a frequency N times that of the reference clock signal RFCK is padded 12 Output from.

The oscillation circuit 50 oscillates the crystal oscillator 20 to generate a reference clock signal RFCK which is an oscillation signal. For example, when the oscillation frequency of the crystal oscillator 20 is fxtal, the frequency of the reference clock signal RFCK is also fxtal.

The PLL circuit 60 operates in a PLL (Phase Locked Loop) when the reference clock signal RFCK is input. For example, the PLL circuit 60 generates a clock signal CKQ having a frequency obtained by multiplying the frequency of the reference clock signal RFCK by N. That is, a high-precision clock signal CKQ whose phase is synchronized with the reference clock signal RFCK is generated. The PLL circuit 60 includes a phase comparison circuit 61, a control voltage generation circuit 62, a voltage control oscillation circuit 63, and a frequency dividing circuit 64.

The phase comparison circuit 61 performs a phase comparison between the reference clock signal RFCK and the feedback clock signal FBCK. For example, the phase comparison circuit 61 compares the phases of the reference clock signal RFCK and the feedback clock signal FBCK, and outputs a signal CQ corresponding to the phase difference between the reference clock signal RFCK and the feedback clock signal FBCK as a signal of the phase comparison result. The signal CQ corresponding to the phase difference is, for example, a pulse signal having a pulse width proportional to the phase difference.

The control voltage generation circuit 62 generates a control voltage VC based on the result of the phase comparison in the phase comparison circuit 61. For example, the control voltage generation circuit 62 generates a control voltage VC that controls the oscillation of the voltage control oscillation circuit 63 by performing a charge pump operation or a filter process based on the signal CQ of the phase comparison result from the phase comparison circuit 61. ..

The voltage control oscillation circuit 63 is an LC oscillation circuit that oscillates at the resonance frequency of the LC because it is electrically connected to the inductor 13 formed on the semiconductor substrate 11 and the capacitor formed together with the circuit element, and the control voltage. A clock signal CKQ having a frequency corresponding to VC is generated. For example, the clock signal CKQ is generated by performing an oscillation operation based on the control voltage VC from the control voltage generation circuit 62. For example, the voltage control oscillation circuit 63 generates a clock signal CKQ having a frequency that changes according to the control voltage VC by the oscillation operation. As an example, the voltage control oscillation circuit 63 has a variable capacitance element such as a varicap, and the capacitance of the variable capacitance element changes based on the control voltage VC, so that the voltage control oscillation circuit 63 is generated by the oscillation operation of the voltage control oscillation circuit 63. The frequency of the clock signal CKQ, which is an oscillation signal, changes.

The frequency dividing circuit 64 divides the clock signal CKQ and outputs the feedback clock signal FBCK. For example, the frequency divider circuit 64 outputs a signal having a frequency obtained by dividing the frequency of the clock signal CKQ by the frequency division ratio set by the frequency division ratio data as a feedback clock signal FBCK. For example, when the oscillation frequency of the voltage control oscillation circuit 63 is fvco and the frequency division ratio of the frequency division operation of the frequency division circuit 64 is N, the frequency of the feedback clock signal FBCK is fvco / N. Note that N may be an integer or a value including a decimal part.

2. Second Embodiment Next, the oscillator 1a as an electronic device according to the second embodiment will be described with reference to FIG. 7.

The oscillator 1a of the present embodiment is the same as the oscillator 1 of the first embodiment except that the shape of the rearranged wiring 16a of the semiconductor device 10a is different from that of the oscillator 1 of the first embodiment. The differences from the first embodiment described above will be mainly described, and the same matters will be omitted.

As shown in FIG. 7, the oscillator 1a has a long length in the Z direction of the first portion 17 of the rearranged wiring 16a electrically connected to the pad 12, that is, the thickness of the rearranged wiring 16a of the first portion 17 is large. thick. Therefore, the thickness of the rearranged wiring 16a at the edge of the opening of the insulating layer 14 and the resin layer 15 that exposes the pad 12 becomes thicker, and the possibility of disconnection of the rearranged wiring 16a at the edge can be reduced.

With such a configuration, the reliability of the electrical connection between the rearranged wiring 16a and the pad 12 is improved, and the same effect as that of the oscillator 1 of the first embodiment can be obtained.

3. 3. Third Embodiment Next, a smartphone 1200 will be described as an example of an electronic device provided with oscillators 1, 1a as an electronic device according to the third embodiment. In the following description, a configuration to which the oscillator 1 is applied will be illustrated and described.

As shown in FIG. 8, the smartphone 1200 incorporates the oscillator 1 described above. The control unit 1201 of the smartphone 1200 has a built-in oscillator 1 that functions as a reference clock or the like for controlling the display image of the display unit 1208.
Since such an electronic device includes the oscillator 1 described above, the effects described in the above embodiment are reflected and the performance is excellent.

In addition to the smartphone 1200, electronic devices equipped with the above-mentioned oscillator 1 include, for example, an inkjet ejection device such as an inkjet printer, a mobile phone, a laptop-type or mobile-type personal computer, a television, and a digital still camera. Video cameras, video tape recorders, various navigation devices, pagers, electronic organizers including communication functions, electronic dictionaries, calculators, electronic game devices, word processors, workstations, videophones, security TV monitors, electronic binoculars, POS terminals, school of fish Examples include detectors, various measuring devices, instruments, flight simulators, and medical devices such as electronic thermometers, blood pressure monitors, blood glucose meters, electrocardiogram measuring devices, ultrasonic diagnostic devices, and electronic endoscopes. In any case, since these electronic devices include the oscillator 1 described above, the effects described in the above embodiment are reflected and the performance is excellent.

4. Fourth Embodiment Next, an automobile 1500 will be described as an example of a mobile body including oscillators 1, 1a as an electronic device according to the fourth embodiment. In the following description, a configuration to which the oscillator 1 is applied will be illustrated and described.

As shown in FIG. 9, the automobile 1500 incorporates the oscillator 1 described above. An oscillator 1 that functions as a reference clock or the like of an electronic control unit 1502 that controls a tire 1503 is mounted on a vehicle body 1501 of an automobile 1500. In addition, the oscillator 1 also includes a keyless entry, an immobilizer, a car navigation system, a car air conditioner, an anti-lock braking system (ABS), an airbag, a tire pressure monitoring system (TPMS), and an engine control. It can be widely applied to electronic control units (ECUs) such as control devices for inertial navigation for automatic driving and battery monitors for hybrid vehicles and electric vehicles.

In addition to the above examples, the oscillator 1 applied to a moving body includes, for example, attitude control of a bipedal walking robot or a train, remote control of a radio-controlled aircraft, a radio-controlled helicopter, and a drone, or autonomous flight. It can be used for posture control of a body, posture control of an agricultural machine, a construction machine, etc. In any case, the effect described in the above embodiment can be reflected, and a moving body having excellent performance can be provided. can.

1,1a ... Oscillator as an electronic device, 10 ... Semiconductor device, 11 ... Semiconductor substrate, 11a ... Surface, 12 ... Pad, 13 ... inductor, 14 ... Insulation layer, 15 ... Resin layer, 16 ... Rearranged wiring, 17 ... 1st part, 18 ... 2nd part, 20 ... Crystal oscillator as a vibrating element, 21 ... Crystal substrate as a piezoelectric body, 22 ... Excitation electrode, 23 ... Lead electrode, 24 ... Electrode pad, 29 ... Wiring, 30 ... Package, 31 ... Base, 32 ... Bonding material, 33 ... Mounting terminal, 34 ... First recess, 35 ... Bottom, 36 ... Second recess, 37 ... Bottom, 38 ... Connection terminal, 39 ... Lid, 40 ... Bump, 42 ... junction member, 50 ... oscillation circuit, 60 ... PLL circuit, 61 ... phase comparison circuit, 62 ... control voltage generation circuit, 63 ... voltage control oscillation circuit, 64 ... frequency division circuit, 1200 ... smartphone as an electronic device, 1500 ... Automobile as a moving body, L1, L2 ... diagonal, L3 ... virtual straight line, O ... center, S ... accommodation space, W1, W2, W3 ... distance.

Claims (11)

Semiconductor devices with pads and
A base on which the semiconductor device is fixed and wiring is provided, and
A bump that electrically connects the pad of the semiconductor device and the wiring of the base,
With
The semiconductor device is
A semiconductor substrate having the pad on one side and
An inductor formed of metal wiring and arranged on the one side of the semiconductor substrate,
An insulating layer formed on one surface of the semiconductor substrate so as to cover the inductor and expose the pads.
A resin layer arranged on the surface of the insulating layer opposite to the semiconductor substrate, and
A rearranged wiring having a first portion electrically connected to the pad and a second portion of the resin layer arranged on a surface opposite to the insulating layer.
Including
The second portion and the wiring of the base are joined by the bump.
Electronic device. Further comprising a vibrating element located on the base and electrically connected to the semiconductor device.
An oscillating circuit that oscillates the vibrating element and a PLL circuit that operates using the oscillating signal of the oscillating circuit as a reference signal are formed on the semiconductor substrate.
The PLL circuit includes a voltage controlled oscillator circuit that is electrically connected to the inductor.
The electronic device according to claim 1. With multiple said relocation wiring
In each of the rearranged wirings, the distance between the second portion and the center of the semiconductor device is smaller than the distance between the first portion and the center of the semiconductor device in a plan view.
The electronic device according to claim 1 or 2. When a virtual straight line equidistant from the rearranged wiring arranged so as to sandwich the inductor is defined.
The inductor is arranged at a position intersecting the virtual straight line in a plan view.
The electronic device according to claim 3. The rearranged wiring is arranged at a position that does not overlap with the inductor in a plan view.
The electronic device according to any one of claims 1 to 4. The thickness of the metal wiring of the inductor is 1 μm or more and 10 μm or less.
The electronic device according to any one of claims 1 to 5. The thickness of the metal wiring of the inductor is 2 μm or more and 6 μm or less.
The electronic device according to claim 6. The vibrating element includes a piezoelectric body and an exciting electrode.
The semiconductor device is arranged between the vibrating element and the base.
The semiconductor device includes a plurality of wiring layers and has a plurality of wiring layers.
The inductor is formed of the metal wiring provided in the first wiring layer, which is the wiring layer closest to the base.
The electronic device according to claim 2. The pad is an output pad that outputs a clock signal from the PLL circuit.
The rearranged wiring is provided at a position that does not overlap with the oscillation circuit in a plan view.
The electronic device according to claim 2. The electronic device according to any one of claims 1 to 9 is provided.
Electronics. The electronic device according to any one of claims 1 to 9 is provided.
Mobile body.

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