JP2021141280A - Power generation element, power generation device, electronic device, and manufacturing method of power generation element - Google Patents

Abstract

To provide a power generation element capable of ensuring a sufficient voltage for driving an integrated circuit more easily than before.SOLUTION: A power generation element that converts thermal energy into electrical energy includes a first cell having an n-type semiconductor, a first electrode portion provided on a first surface of the n-type semiconductor, a support portion that supports the first electrode portion, and the n-type semiconductor, a second electrode portion that faces the first surface in a first direction, is separated from the first electrode portion, and has a work function different from that of the first electrode portion, and an intermediate portion containing nanoparticles having a work function between a work function of the first electrode portion and a work function of the second electrode portion, provided between the first electrode portion and the second electrode portion, and the first electrode portion includes a degenerate portion in which the n-type semiconductor is degenerated.SELECTED DRAWING: Figure 2

Description

The present invention relates to a power generation element, a power generation device, an electronic device, and a method for manufacturing the power generation element.

For example, Patent Document 1 describes a thermoelectric element that utilizes an electron emission phenomenon due to absolute temperature that occurs between electrodes having a work function, and includes an emitter electrode layer, a collector electrode layer, an emitter electrode layer, and a collector electrode layer. Dispersed on the surface, the emitter electrode layer and the collector electrode layer are provided with electrically insulating spherical nanobeads that affect the collector electrode layer in a submicron sense, and the work function of the emitter electrode layer is smaller than the work function of the collector electrode layer and is spherical. A thermoelectric element having a nanobead particle size of 100 nm or less is disclosed.

A thermoelectric element that utilizes a work function difference between electrodes as disclosed in Patent Document 1 has a case where the temperature difference between electrodes is smaller than that of a thermoelectric element that utilizes a temperature difference between electrodes such as the Seebeck effect. Even so, it is possible to generate electricity.

Japanese Unexamined Patent Publication No. 2018-019042

In a conventional thermoelectric element as described in Patent Document 1 (hereinafter, this may be referred to as a power generation element), the power generation elements are connected in series in order to output power that drives an integrated circuit. Sufficient voltage for driving integrated circuits cannot be guaranteed without such complicated wiring.

One aspect of the embodiment of the present invention is to provide a power generation element capable of ensuring a sufficient voltage for driving an integrated circuit more easily than in the prior art.

A power generation element that converts thermal energy into electrical energy, and includes an n-type semiconductor, a first electrode portion provided on the first surface of the n-type semiconductor, and a support portion that supports the first electrode portion. A second electrode portion that faces the first surface in the first direction, is separated from the first electrode portion, and has a work function different from that of the first electrode portion. An intermediate portion provided between the first electrode portion and the second electrode portion and containing nanoparticles having a work function between the work function of the first electrode portion and the work function of the second electrode portion, The first electrode portion provides a power generation element including a reduced portion in which the n-type semiconductor is reduced.

A power generation device including a power generation element that converts thermal energy into electrical energy, wherein the power generation element includes an n-type semiconductor, a first electrode portion provided on a first surface of the n-type semiconductor, and a first. A first cell having a support portion that supports the electrode portion, faces the first surface in the first direction, is separated from the first electrode portion, and has a work function different from that of the first electrode portion. It is provided between the second electrode portion and the first electrode portion and the second electrode portion, and has a work function between the work function of the first electrode portion and the work function of the second electrode portion. The first electrode portion includes an intermediate portion containing the nanoparticles to be provided, and the first electrode portion provides a power generation device including a reduced portion in which the n-type semiconductor is reduced.

An electronic device including a power generation element that converts thermal energy into electrical energy and an electronic device that can be driven by using the power generation element as a power source. The power generation element is an n-type semiconductor and an n-type semiconductor. A first cell having a first electrode portion provided on the first surface of the above and a support portion for supporting the first electrode portion, facing the first surface in the first direction, and first A second electrode portion separated from the first electrode portion and having a work function different from that of the first electrode portion, and a first electrode portion provided between the first electrode portion and the second electrode portion. The first electrode portion includes an intermediate portion containing nanoparticles having a work function between the work function of Provide equipment.

A method for manufacturing a power generation element that converts thermal energy into electrical energy, in which a reduced portion is formed by decomposing a part of a first cell containing an n-type semiconductor, and a first electrode portion including the reduced portion is formed. Then, a support portion for supporting the first electrode portion is formed, the first cell and the second electrode portion are laminated, and between the work function of the first electrode portion and the work function of the second electrode portion. Provided is a method for manufacturing a power generation element, in which an intermediate portion containing nanoparticles having the work function of is formed between a first electrode portion and a second electrode portion.

According to one aspect of the embodiment of the present invention, it is possible to realize a power generation element capable of ensuring a sufficient voltage for driving an integrated circuit more easily than in the conventional case.

FIG. 1 is a schematic perspective view showing a power generation element according to the present embodiment. FIG. 2 is a schematic cross-sectional view showing a cross section taken along the line AA'in FIG. FIG. 3 is a conceptual diagram of the region C in FIG. FIG. 4 is a schematic cross-sectional view showing a BB'cross section in FIG. FIG. 5 is a schematic cross-sectional view showing a case where the first cell and the second electrode portion are laminated according to the present embodiment. FIG. 6 is a flowchart showing an outline of a method for manufacturing a power generation element according to the present embodiment. FIG. 7 is a flowchart showing a method of manufacturing a power generation element according to the present embodiment. FIG. 8 is a conceptual diagram of the region C in FIG. 2 according to another embodiment. 9 (a) to 9 (d) are schematic block diagrams showing an example of an electronic device provided with a power generation element, and FIGS. 9 (e) to 9 (h) have a power generation function including the power generation element. It is a schematic block diagram which shows the example of the electronic device provided with the semiconductor integrated circuit device.

Hereinafter, one aspect of the embodiment of the present invention will be described in detail with reference to the drawings.

(Implementation)
FIG. 1 is a schematic perspective view showing a power generation element 1 according to the present embodiment. As shown in FIG. 1, a power generation element 1 which is an element for converting thermal energy into electric energy to generate an electric current is provided in a power generation device 100, and the power generation device 100 is provided with terminals 101 and 102 in addition to the power generation element 1. And wirings 103 and 104. The current flows between the first electrode portion 23 and the second electrode portion 24, which will be described later, included in the power generation element 1.

The power generation device 100 including the power generation element 1 is mounted or installed on a heat source (not shown), and the electric energy generated by the power generation element 1 based on the heat energy of the heat source is used as terminals 101, 102 and wirings 103, 104. Is output to the load R via.

One end of the load R is electrically connected to the wiring 103 via the terminal 101, and the other end of the load R is electrically connected to the wiring 104 via the terminal 102. The load R is, for example, an electrical device, and can be driven by using, for example, a power generation element 1 as a main power source or an auxiliary power source.

Examples of the heat source of the power generation element 1 include electronic devices such as a CPU (Central Processing Unit), electronic components, light emitting elements such as LEDs (Light Emitting Diodes), engines such as automobiles, production equipment in factories, human bodies, sunlight, and the like. Environmental temperature etc. can be used. Electronic devices, electronic components, light emitting elements, engines, production equipment, and the like are artificial heat sources, and the human body, sunlight, environmental temperature, and the like are natural heat sources.

Since the power generation device 100 including the power generation element 1 can be provided inside an electronic device such as an IoT (Internet of Things) device, a wearable device, and a self-supporting sensor terminal, it can be used as a substitute or an auxiliary for a battery of the electronic device. Can operate. Further, the power generation device 100 may be used for, for example, solar power generation, which handles a large amount of electric power as compared with an IoT device or the like.

The power generation element 1 alone can also be used as a temperature sensor according to the power generation principle, which is the principle of power generation by the power generation element 1. Further, the power generation element 1 alone may be provided inside the electronic device, and in this case, the power generation element 1 alone operates as a substitute or an auxiliary for the battery of the electronic device.

The side surface of the power generation element 1 is covered with a sealing member 3 which is an insulator. It is provided with a degenerate portion 4 formed by degenerating. The terminal 101 is connected to the first metal 2, and the terminal 102 is connected to the degenerate portion 4.

Degeneracy occurs, for example, by ion-implanting an n-type dopant into a semiconductor at a high concentration, or by coating a semiconductor with a material such as glass containing the n-type dopant and performing heat treatment after coating.

Here, the internal structure of the power generation element 1 will be described with reference to FIGS. 2 and 3. FIG. 2 is a schematic cross-sectional view showing a cross section taken along the line AA'in FIG. FIG. 3 is a schematic cross-sectional view showing a BB'cross section in FIG. As shown in FIGS. 2 and 3, the power generation element 1 includes a first cell 10, a second electrode portion 24, and an intermediate portion 8 containing nanoparticles.

The first cell 10 includes a non-degenerate portion 5 which is a non-degenerate n-type semiconductor, a first electrode portion 23 provided on the first surface 21 of the n-type semiconductor, and a first electrode portion 23. It has a support portion 7 for supporting. The first electrode portion 23 includes a degenerate portion 4 in which the n-type semiconductor is degenerated. The degenerate portion 4 is in contact with the support portion 7. The first cell 10 may include a degenerate portion 6 formed on a side sandwiching the non-degenerate portion 5 from the degenerate portion 4. Here, the n-type semiconductor is, for example, n-type silicon obtained by adding a pentavalent element such as phosphorus as an impurity to silicon.

The second electrode portion 24 faces the first surface 21 in the first direction Z, is separated from the first electrode portion 23, and has a work function different from that of the first electrode portion 23. Further, even if the second electrode portion 24 is included in the second cell 11 having the degenerate portions 4 and 6 in which the n-type semiconductor is degenerated and the non-degenerate portion 5 which is the non-degenerate n-type semiconductor. good.

The intermediate portion 8 is provided between the first electrode portion 23 and the second electrode portion 24, and the nanoparticles 15 described later contained in the intermediate portion 8 are the work function of the first electrode portion 23 and the second. It has a work function between the work function of the electrode unit 24 and the work function of the electrode unit 24.

The gap portion 20 indicates a portion surrounded by the first electrode portion 23, the second electrode portion 24, and the support portion 7, and is a space isolated from the outside. The gap portion 20 has a first electrode portion 23, a second electrode portion 24, and an intermediate portion 8. The inner side of the power generation element 1 refers to a portion including the gap portion 20, and the outer side of the power generation element 1 refers to a portion separated from the gap portion 20.

As described above, in the power generation element 1 of the present embodiment, the first electrode portion 23 including the degenerate portion 4 and the second electrode portion 24 are separated by the support portion 7. Further, it is a non-degenerate portion 5 which is an n-type semiconductor possessed by the first cell 10 and the second cell 11 and conducts electricity. Therefore, wiring is not required in the power generation element 1, and it is possible to realize a power generation element in which a sufficient voltage for driving an integrated circuit can be easily secured as compared with the conventional case.

The support portion 7 is formed by, for example, dry-oxidizing a part of a degenerate portion of an n-type semiconductor. According to dry oxidation, it takes about 1 hour to form a silicon oxide film having a thickness of 50 nm at 1000 ° C. Since dry oxidation is a reaction rate-determining process, for example, with respect to a standard film thickness of 50 nm. The support portion 7 can be formed with an accuracy of about 1 nm. Therefore, by using the dry oxidation method, the gap portion 20 can be formed with high accuracy.

For example, when phosphorus or the like is used as the dopant, phosphorus or the like moves to the n-type semiconductor side due to segregation, so that the degree of degeneracy can be increased. Further, for example, dry etch, wet etch, vapor etch and the like are used to pattern the silicon oxide film.

Therefore, when the support portion 7 is formed by oxidizing silicon, the variation in the gap between the electrodes can be suppressed, and it becomes easy to stabilize the amount of electric energy generated.

Further, for example, the second electrode portion 24 may include the first metal 2, and the work function of the first metal 2 is different from the work function of the first electrode portion 23. Since the second electrode portion 24 contains the first metal 2, it becomes easy to adjust the work function between the second electrode portion 24 and the first electrode portion 23 formed by degenerating the n-type semiconductor.

Further, the first cell 10 may further have a second metal 18. In this case, the first electrode portion 23 has a degenerate portion 4 and a second metal 18 provided between the pair of support portions 7 in contact with the degenerate portion 4, and the second metal 18 is provided. The work function of is different from the work function of the second electrode unit 24.

Since the first electrode portion 23 has the second metal 18, it becomes easy to adjust the work function with the second electrode portion 24. Further, since the first electrode portion 23 has the second metal 18, the distance between the first electrode portion 23 and the second electrode portion 24 in the first direction Z (hereinafter, this is referred to as an electrode-to-electrode gap). It becomes easier to adjust (you may call it).

The thickness of the first cell 10 and the second cell 11 in the first direction Z is, for example, 10 μm or more and 1 mm or less. The width of the first cell 10 and the second cell 11 in the second direction X or the third direction Y is, for example, about 1 mm to 500 mm, and can be arbitrarily set according to the application.

The first electrode portion 23 includes, for example, a degenerate portion 4 obtained by degenerating n-type silicon having an electron affinity of 4.05 eV. The work function of n-type silicon depends on the dopingon concentration in addition to the electron affinity. The second electrode portion 24 contains a first metal 2 such as platinum having a work function value of about 5.65 eV.

In the power generation element 1, an electron emission phenomenon due to absolute temperature generated between the first electrode portion 23 and the second electrode portion 24 having a work function difference is utilized. Therefore, the power generation element 1 can convert thermal energy into electrical energy even when the temperature difference between the first electrode portion 23 and the second electrode portion 24 is small.

The power generation element 1 can convert thermal energy into electrical energy even when there is no temperature difference between the first electrode portion 23 and the second electrode portion 24. Further, the power generation element 1 can convert heat energy into electrical energy even when the same heat source is used in the first electrode portion 23 and the second electrode portion 24.

The thickness of the first electrode portion 23 and the second electrode portion 24 is, for example, 10 nm or more and 10 μm or less, preferably 10 nm or more and 1 μm or less in the first direction Z. The width of the first electrode portion 23 and the second electrode portion 24 is, for example, about 100 μm to 500 mm in the second direction X or the third direction Y, and can be arbitrarily set according to the application.

The gap between the electrodes is, for example, a finite value of 1 μm or less. The gap between the electrodes is more preferably 10 nm or more and 100 nm or less. By setting the gap between the electrodes to 10 nm or more and 100 nm or less, the amount of electric energy generated in the power generation element 1 can be increased. For example, if the gap between the electrodes is set to less than 10 nm, there is a possibility that the nanoparticles 15 cannot be maintained in a uniformly dispersed state.

Here, the details of the intermediate portion 8 will be described with reference to FIG. FIG. 3 is a conceptual diagram of the region C in FIG. The intermediate portion 8 is, for example, a portion that moves the electrons e emitted from the first electrode portion 23 or the second electrode portion 24 to the second electrode portion 24 or the first electrode portion 23. The plurality of nanoparticles 15 are dispersed in the solvent 17. The intermediate portion 8 is obtained, for example, by filling the gap portion 20 with a solvent 17 in which nanoparticles 15 are dispersed.

The nanoparticles 15 contain, for example, a conductor, and the work function value of the nanoparticles 15 is, for example, between the work function value of the first electrode unit 23 and the work function value of the second electrode unit 24. For example, the plurality of nanoparticles 15 include particles having a work function value in the range of 3.0 eV or more and 5.5 eV or less.

As a result, the electrons e emitted between the first electrode portion 23 and the second electrode portion 24 are transferred from the first electrode portion 23 to the second electrode portion 24 via the nanoparticles 15, for example. Can be moved. As a result, it is possible to increase the amount of electric energy generated as compared with the case where the nanoparticles 15 are not present in the intermediate portion 8.

As the material of the nanoparticles 15, for example, at least one of gold and silver can be selected. The intermediate portion 8 may include at least a part of nanoparticles 15 having a work function between the work function of the first electrode portion 23 and the work function of the second electrode portion 24. Therefore, as the material of the nanoparticles 15, it is also possible to select a conductive material other than gold and silver.

The particle size of the nanoparticles 15 is, for example, 2 nm or more and 10 nm or less. Further, the nanoparticles 15 may have a particle size having an average particle size of 3 nm or more and 8 nm or less, such as a median diameter. The average particle size can be measured by using a particle size distribution measuring device such as Nanotrac BEL's Nanotrac Wave II-EX150 manufactured by Microtrac BEL using a laser diffraction scattering method, for example.

The nanoparticles 15 have, for example, an insulating film 16 on the surface thereof. As an example of the material of the insulating film 16, at least one of an insulating metal compound and an insulating organic compound can be selected. Examples of the insulating metal compound include silicon oxide and alumina. Examples of the insulating organic compound include alkanethiol (for example, dodecanethiol).

The thickness of the insulating film 16 is, for example, a finite value of 20 nm or less. When such an insulating film 16 is provided on the surface of the nanoparticles 15, the electrons e are, for example, between the first electrode portion 23 and the nanoparticles 15, and between the nanoparticles 15 and the second electrode portion 24. You can easily move between them by using the tunnel effect.

When the insulating film 16 is provided, for example, improvement in the power generation efficiency of the power generation element 1 can be expected. At this time, for example, as shown by the arrow, the movement of the electron e may be promoted by utilizing the movement of the nanoparticles 15.

The solvent 17 is, for example, a liquid having a boiling point of 60 ° C. or higher. As a result, the vaporization of the solvent 17 can be suppressed even when the power generation element 1 is used in an environment where the temperature is room temperature or higher. The room temperature is, for example, 15 ° C to 35 ° C.

When the solvent 17 is a liquid having a boiling point of 60 ° C. or higher as described above, deterioration of the power generation element 1 due to vaporization of the solvent 17 can be suppressed. As an example of a liquid, at least one of an organic solvent and water can be selected. Examples of the organic solvent include methanol, ethanol, toluene, xylene, tetradecane, alkanethiol and the like. The solvent 17 is preferably a liquid having a high electrical resistance value and being insulating.

Here, the operation of the power generation element 1 will be described. When thermal energy is applied to the power generation element 1, electrons e are emitted from the first electrode portion 23 or the second electrode portion 24 to the intermediate portion 8. The emitted electrons e move from the intermediate portion 8 to the second electrode portion 24 or the first electrode portion 23. In this case, a current flows between the first electrode portion 23 and the second electrode portion 24. In this way, thermal energy is converted into electrical energy.

The amount of emitted electrons e depends not only on the thermal energy but also on the difference between the work function of the first electrode portion 23 and the work function of the second electrode portion 24. The amount of emitted electrons e tends to increase as the work function of the material is smaller.

The amount of moving electrons e can be increased, for example, by increasing the difference in work function between the first electrode portion 23 and the second electrode portion 24, or by reducing the gap between the electrodes. Therefore, the amount of electric energy generated by the power generation element 1 is at least such that the difference in work function between the first electrode portion 23 and the second electrode portion 24 is increased, or the gap between the electrodes is reduced. It can be increased by doing one.

Next, a case where the first cell 10 and the second electrode portion 24 are laminated will be described with reference to FIG. FIG. 5 is a schematic cross-sectional view showing a case where the first cell 10 and the second electrode portion 24 are laminated according to the present embodiment.

As shown in FIG. 5, the power generation element 25 has a first layer 26 having a first cell 10 and a second electrode portion 24 and a second layer 27 having a first cell 10 and a second electrode portion 24. And. The first layer 26 and the second layer 27 are laminated in the first direction Z, and the second electrode portion 24 of the first layer 26 is the first surface of the n-type semiconductor of the second layer 27. It comes into contact with the degenerate portion 6 included in the surface opposite to 21.

When the first cell 10 and the second electrode portion 24 are laminated, the first cell 10 and the second electrode portion 24 can be connected in series without extra wiring, so that the output of the power generation element 1 can be output. It becomes easy to increase the voltage. A Schottky barrier does not occur between the degenerate portion 6 and the second electrode portion 24, and the degenerate portion 6 does not require wiring to the power generation element 1 in order to conduct electricity.

Further, by adjusting the doping amount of ions to the degenerate portion 4 that functions as the first electrode portion 23, the current between the first electrode portion 23 and the second electrode portion 24 can be obtained without using the PN junction. Can be controlled.

Next, the outline of the manufacturing method of the power generation elements 1 and 25 will be described with reference to FIG. FIG. 6 is a flowchart showing an outline of the manufacturing method of the power generation elements 1 and 25 according to the present embodiment. For example, a manufacturing apparatus (not shown) that manufactures the power generation element 1 forms a degenerate portion 4 in which a part of the first cell 10 including the n-type semiconductor is degenerated (S1).

Next, the manufacturing apparatus forms the first electrode portion 23 including the degenerate portion 4 (S2), forms the support portion 7 that supports the first electrode portion 23 (S3), and forms the first cell 10 and the first cell. The electrode portions 24 of 2 are laminated (S4).

Next, the manufacturing apparatus has the first electrode portion 23 and the first electrode portion 23 and the intermediate portion 8 containing the nanoparticles having a work function between the work function of the first electrode portion 23 and the work function of the second electrode portion 24. It is formed between the electrode portion 24 and the electrode portion 24 (S5).

Next, a detailed example of the manufacturing method of the power generation elements 1 and 25 will be described with reference to FIG. 7. FIG. 7 is a flowchart showing a method of manufacturing the power generation elements 1 and 25 according to the present embodiment. First, for example, the manufacturing apparatus forms the first cell 10.

Specifically, the manufacturing apparatus degenerates by injecting ions into the first surface 21 of the substrate 12 including the non-degenerate portion 30 and the surface opposite to the first surface (S11), and the degenerate portion. Form 31,6. At this time, the non-degenerate portion remains as the non-degenerate portion 5. The dicing line described later is not degenerated.

Next, the manufacturing apparatus oxidizes the degenerate portion 31 formed on the first surface 21 (S12) to form the oxidized portion 32. When the substrate 12 is silicon, the oxide portion 32 becomes a silicon oxide film. The manufacturing apparatus performs an annealing treatment when oxidizing the degenerate portion 31. Next, the manufacturing apparatus applies the resist 33 to a predetermined region on the first surface 21 side (S13).

Next, the manufacturing apparatus scrapes the oxidized portion 32 to which the resist 33 is not applied by dry etching to form the supporting portion 7 (S14). At the time of dry etching, a dicing line for performing dicing may be formed by forming a recess in the degenerate portion 4. Next, the manufacturing apparatus removes the resist 33 (S15).

Next, the manufacturing apparatus forms the first cell 10 by laminating the first metal 2 on the surface opposite to the first surface 21 and dicing it (S16). The first metal 2 is laminated by, for example, a chemical vapor deposition method or an atomic layer deposition method.

Next, the manufacturing apparatus refers to the design output power of the power generation element 1 to be manufactured, and determines whether or not it is necessary to form the first cell 10 yet (S17). When the manufacturing apparatus determines that it is necessary to form the first cell 10 and obtains a negative result in the determination in step S7 (S17: NO), the manufacturing apparatus executes steps S1 to S7 again.

When the manufacturing apparatus determines that it is not necessary to create the first cell and obtains an affirmative result in the determination in step S7 (S17: YES), the manufacturing apparatus starts forming the second cell 11. First, the manufacturing apparatus degenerates into an n-shape by injecting ions into the first surface 21 of the substrate 12 including the non-degenerate portion 30 and the surface opposite to the first surface (S18), and the degenerate portion. Form 4 and 6. At this time, the non-degenerate portion remains as the non-degenerate portion 5.

Next, the manufacturing apparatus forms the second cell 11 by laminating the first metal 2 on the surface opposite to the first surface 21 and dicing it (S19). The first metal 2 is laminated by, for example, a chemical vapor deposition method or an atomic layer deposition method.

Next, in the manufacturing apparatus, the first cell 10 and the second cell 11 are laminated by, for example, plasma bonding, and the intermediate portion 8 is formed by utilizing, for example, a capillary phenomenon (S20). When there are a plurality of first cells 10, the power generation element 25 is manufactured, and when there is one first cell 10, the power generation element 1 is created.

In the formation of the first cell, the timing of laminating the first metal 2 may be before the dry etching. Further, in the production of the second cell, the first metal 2 may be laminated on the degenerate portion 4 side as well.

Steps S11 and S15 are specific examples of steps S1 and S2, and steps S12 to S14 are specific examples of step S3. S18 and S19 are steps for producing the second electrode portion 24, and steps S18 to S20 are specific examples of steps S4 and S5.

(Other embodiments)
In the above-described embodiment, the first electrode portion 23 includes a degenerate portion 4 obtained by degenerating n-type silicon, and the second electrode portion 24 contains a first metal 2 such as platinum. However, the present invention is not limited to this.

Since it is sufficient that a work function difference occurs between the first electrode portion 23 and the second electrode portion 24, the material of the first electrode portion 23 and the material of the second electrode portion 24 are, for example, platinum or tungsten. , Aluminum, titanium, niobium, molybdenum, tantalum, rhenium and other metals.

In addition to metals, the material of the first electrode portion 23 and the material of the second electrode portion 24 are alloys, intermetallic compounds, and compounds of metal elements and non-metal elements, such as lanthanum hexaborate. It may be a metal compound of.

Further, the material of the first electrode portion 23 and the material of the second electrode portion 24 may be a non-metallic conductive material such as n-type silicon, p-type silicon, or a carbon-based material such as graphene. Further, the material of the first electrode portion 23 and the structure of the second electrode portion 24 may be a laminated structure instead of a single layer structure.

Further, in the above-described embodiment, the case where the solvent 17 is filled in the gap portion 20 has been described, but the present invention is not limited to this, and as shown in FIG. 8, the gap portion 20 has a gap portion 40. May be good. FIG. 8 is a conceptual diagram of the region C in FIG. 2 according to another embodiment.

When the intermediate portion 8 does not contain the solvent 17 but contains only the nanoparticles 15, it is not necessary to consider the vaporization of the solvent 17 even when the power generation element 1 is used in a high temperature environment. This makes it possible to suppress deterioration of the power generation element 1 in a high temperature environment.

Further, the power generation element 1 and the power generation device 100 described above can be mounted on, for example, an electronic device. Hereinafter, some embodiments of the electronic device will be described.

9 (a) to 9 (d) are schematic block diagrams showing an example of an electronic device 500 provided with a power generation element 1. 9 (e) to 9 (h) are schematic block diagrams showing an example of an electronic device 500 including a power generation device 100 including a power generation element 1.

As shown in FIG. 9A, the electronic device 500 (electric product) includes an electronic component 501 (electronic component), a main power supply 502, and an auxiliary power supply 503. Each of the electronic device 500 and the electronic component 501 is an electrical device (electrical device).

The electronic component 501 is driven by using the main power source 502 as a power source. Examples of the electronic component 501 include a CPU, a motor, a sensor terminal, lighting, and the like. When the electronic component 501 is, for example, a CPU, the electronic device 500 includes an electronic device that can be controlled by a built-in master (CPU).

When the electronic component 501 includes at least one such as a motor, a sensor terminal, a lighting, etc., the electronic device 500 includes an external master or an electronic device that can be controlled by a person.

The main power source 502 is, for example, a battery. Batteries also include rechargeable batteries. The positive terminal (+) of the main power supply 502 is electrically connected to the Vcc terminal (Vcc) of the electronic component 501. The negative terminal (−) of the main power supply 502 is electrically connected to the GND terminal (GND) of the electronic component 501.

The auxiliary power supply 503 is a power generation element 1. The power generation element 1 includes at least one of the power generation elements 1 described above. One end of the power generation element 1 is electrically connected to the GND terminal (GND) of the electronic component 501, the negative terminal (-) of the main power supply 502, or the wiring connecting the GND terminal (GND) and the negative terminal (-). Be connected.

The other end of the power generation element 1 is electrically connected to the Vcc terminal (Vcc) of the electronic component 501, the positive terminal (+) of the main power supply 502, or the wiring connecting the Vcc terminal (Vcc) and the positive terminal (+). Connected to.

In the electronic device 500, the auxiliary power supply 503 is used in combination with the main power supply 502, for example, as a power source for assisting the main power supply 502 or as a power source for backing up the main power supply 502 when the capacity of the main power supply 502 is exhausted. be able to. When the main power source 502 is a rechargeable battery, the auxiliary power source 503 can also be used as a power source for charging the battery.

As shown in FIG. 9B, the main power source 502 may be the power generation element 1. One end of the power generation element 1 is electrically connected to the GND terminal (GND) of the electronic component 501. The other end of the power generation element 1 is electrically connected to the Vcc terminal (Vcc) of the electronic component 501.

The electronic device 500 shown in FIG. 9B includes a power generation element 1 used as a main power source 502 and an electronic component 501 that can be driven by the power generation element 1. The power generation element 1 is an independent power source such as an off-grid power source.

Therefore, the electronic device 500 can be made, for example, a self-supporting type (hereinafter, this may be referred to as a stand-alone type). Moreover, the power generation element 1 is an energy harvesting type (hereinafter, this may be referred to as an energy harvest type). In the electronic device 500 shown in FIG. 9B, it is not necessary to replace the battery.

As shown in FIG. 9C, the electronic component 501 may include the power generation element 1. One end of the power generation element 1 is electrically connected to, for example, the GND wiring of a circuit board (not shown). The other end of the power generation element 1 is electrically connected to, for example, the Vcc wiring of the circuit board. In this case, the power generation element 1 can be used as an electronic component 501, for example, an auxiliary power supply 503.

As shown in FIG. 9D, when the electronic component 501 includes the power generation element 1, the power generation element 1 can be used as, for example, the main power source 502 of the electronic component 501. As shown in each of FIGS. 9 (e) to 9 (h), the electronic device 500 may include a power generation device 100. The power generation device 100 includes a power generation element 1 as a source of electric energy.

The embodiment shown in FIG. 9D includes a power generation element 1 in which the electronic component 501 is used as the main power source 502. Similarly, the embodiment shown in FIG. 9H includes a power generation device 100 in which the electronic component 501 is used as the main power source.

In these embodiments, the electronic component 501 has an independent power source. Therefore, the electronic component 501 can be made, for example, a self-standing type. The self-supporting electronic component 501 can be effectively used for an electronic device including, for example, a plurality of electronic components, and at least one electronic component is separated from another electronic component.

Examples of such an electronic device 500 include a sensor. The sensor includes a sensor terminal (slave) and a controller (master) away from the sensor terminal. Each of the sensor terminal and the controller is an electronic component 501.

If the sensor terminal includes the power generation element 1 or the power generation device 100, it becomes a self-supporting sensor terminal, and there is no need to supply electric power by wire. Since the power generation element 1 or the power generation device 100 is an energy harvesting type, it is not necessary to replace the battery.

The sensor terminal can also be regarded as one of the electronic devices 500. The sensor terminal regarded as the electronic device 500 further includes, for example, an IoT wireless tag in addition to the sensor terminal of the sensor.

What is common to the embodiments shown in FIGS. 9 (a) to 9 (h) is that the electronic device 500 uses a power generation element 1 that converts thermal energy into electrical energy and a power generation element 1 as a power source. It includes an electronic component 501 that can be driven by the device.

The electronic device 500 may be an autonomous type having an independent power supply (hereinafter, this may be referred to as an automatic type). Examples of autonomous electronic devices include robots and the like.

Further, the electronic component 501 including the power generation element 1 or the power generation device 100 may be an autonomous type having an independent power source. Examples of autonomous electronic components include movable sensor terminals.

Although some of the embodiments of the present invention have been described above, these embodiments are presented as examples and are not intended to limit the scope of the invention. For example, these embodiments can be combined as appropriate.

Further, the present invention can be implemented in various novel embodiments in addition to the above-mentioned several embodiments. Therefore, each of the above-described embodiments can be omitted, replaced, or modified in various ways without departing from the gist of the present invention.

Such novel forms and modifications are included in the scope and gist of the present invention, as well as in the scope of the invention described in the claims and the equivalent of the invention described in the claims.

1,25 ... Power generation element, 2 ... First metal, 3 ... Sealing member, 4, 6 ... Degenerate part, 5 ... Non-degenerate part, 7 ... Support part, 8 ... Middle part, 10 ... 1st cell, 11 ... 2nd cell, 12 ... substrate, 15 ... nanoparticles, 16 ... insulating film, 18 ... second metal, 20 ... gap part, 21 ... second Surface 1, 23 ... 1st electrode part, 24 ... 2nd electrode part.

Claims (8)

A power generation element that converts thermal energy into electrical energy.
A first having a non-degenerate portion which is a non-degenerate n-type semiconductor, a first electrode portion provided on the first surface of the n-type semiconductor, and a support portion for supporting the first electrode portion. 1 cell and
A second electrode portion that faces the first surface in the first direction, is separated from the first electrode portion, and has a work function different from that of the first electrode portion.
Nanoparticles provided between the first electrode portion and the second electrode portion and having a work function between the work function of the first electrode portion and the work function of the second electrode portion. Including middle part and
With
The first electrode portion includes a degenerate portion in which the n-type semiconductor is degenerated.
Power generation element. The power generation element according to claim 1, wherein the support portion is a partially oxidized portion of the degenerate portion. The second electrode portion contains the first metal and contains the first metal.
The work function of the first metal is larger than the work function of the first electrode portion.
The power generation element according to claim 1. The first cell further comprises a second metal.
The first electrode portion has the degenerate portion and the second metal provided between the pair of support portions in contact with the degenerate portion.
The work function of the second metal is smaller than the work function of the second electrode portion.
The power generation element according to claim 1. A first layer having the first cell and the second electrode portion, and
A second layer having the first cell and the second electrode portion,
With
The first layer and the second layer are laminated in the first direction, and the second electrode portion of the first layer is the first of the n-type semiconductor of the second layer. In contact with the degenerate part contained in the surface opposite to the surface of
The power generation element according to claim 1. A power generation device equipped with a power generation element that converts thermal energy into electrical energy.
The power generation element is
The non-degenerate part, which is an n-type semiconductor that is not degenerate,
A first electrode portion provided on the first surface of the n-type semiconductor and
A support portion that supports the first electrode portion and a support portion that supports the first electrode portion
The first cell with
A second electrode portion that faces the first surface in the first direction, is separated from the first electrode portion, and has a work function different from that of the first electrode portion.
Nanoparticles provided between the first electrode portion and the second electrode portion and having a work function between the work function of the first electrode portion and the work function of the second electrode portion. Including middle part and
With
The first electrode portion includes a degenerate portion in which the n-type semiconductor is degenerated.
Power generator. An electronic device including a power generation element that converts thermal energy into electrical energy and an electronic device that can be driven by using the power generation element as a power source.
The power generation element is
The non-degenerate part, which is an n-type semiconductor that is not degenerate,
A first electrode portion provided on the first surface of the n-type semiconductor and
A support portion that supports the first electrode portion and a support portion that supports the first electrode portion
The first cell with
A second electrode portion that faces the first surface in the first direction, is separated from the first electrode portion, and has a work function different from that of the first electrode portion.
Nanoparticles provided between the first electrode portion and the second electrode portion and having a work function between the work function of the first electrode portion and the work function of the second electrode portion. Including middle part and
With
The first electrode portion includes a degenerate portion in which the n-type semiconductor is degenerated.
Electronics. A method of manufacturing a power generation element that converts thermal energy into electrical energy.
A degenerate portion is formed by degenerating a part of the first cell containing the n-type semiconductor.
A first electrode portion including the degenerate portion is formed, and the first electrode portion is formed.
A support portion that supports the first electrode portion is formed, and a support portion is formed.
The first cell and the second electrode portion are laminated, and the first cell and the second electrode portion are laminated.
An intermediate portion containing nanoparticles having a work function between the work function of the first electrode portion and the work function of the second electrode portion is provided between the first electrode portion and the second electrode portion. Form to
Manufacturing method of power generation element.

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