JP2021136282A - Junction layer evaluation method and junction layer evaluation device - Google Patents

Abstract

To solve the problem that a junction layer cannot be evaluated quantitatively.SOLUTION: In a SiC substrate 106, a thin film heater 117 consisting of Ni-P is formed between a terminal electrode 115a and a terminal electrode 115b, a temperature probe 116 consisting of Ni-P is formed between a terminal electrode 114a and a terminal electrode 114b, and a current application passage 132 is formed between a terminal electrode 124a and a terminal electrode 124b. The SiC substrate 106 and a copper plate 104 are connected by sintered Ag paste 125. A junction layer 105 is formed in a state where an indium containing layer is formed in a layer opposed with the junction layer 105. In a terminal electrode 115, a constant current 128d is supplied from a DC power supply device 803b for TM to the thin film heater 117. A constant current 128a is supplied from a DC power supply device 803c for EM to the current application passage 132.SELECTED DRAWING: Figure 1

Description

The present invention relates to a structure of a bonding layer (solder portion, etc.) for joining a terminal electrode of a semiconductor component, an electronic component, etc. and an electrode of a printed circuit board, a method for producing the bonding layer, a method for evaluating the bonding layer, and an evaluation device for the bonding layer. It is a thing. Further, by evaluating the bonding layer, it is related to evaluation of deterioration and life of the bonding layer.

Further, the present invention relates to a structure and usage method of a heater chip used for a joint layer evaluation device, the manufacturing method, a heater chip drive method, a joint layer evaluation method using a heater chip, an evaluation device using a heater chip, and the like. ..

Currently, electronic devices tend to be smaller and thinner, and have higher functionality and accuracy. Surface mount technology is an important technology that supports this. This surface mounting technology is a technology for mounting and connecting chip parts and electronic parts centered on ICs and LSIs on a high-precision printed board, and high-density mounting and high reliability are important.

Higher precision electronic circuit boards, smaller mounting components, and narrower pitches have progressed, and joining technology between the electrodes of chip components and electronic components and the electrodes of electronic circuit boards is important. Therefore, there is a demand for a technique capable of quantitatively evaluating the bonding state of the electrode and the bonding layer between the electrodes.

JP 2012-178449

FIG. 24 is an explanatory view and a cross-sectional view of the conventional heater tip 109. FIG. 24 (a) is a plan view of the conventional heater tip 109, and FIG. 24 (b) is a cross-sectional view taken along the line AA'of FIG. 24 (a). FIG. 24 (c) is a cross-sectional view taken along the line BB'of FIG. 24 (a).
In FIG. 24, the thin film heater 117 and the temperature probe 116 are formed of Ni (nickel) -P on the surface of the base substrate 106.

Temperature probe terminal electrodes 114 are formed at both ends of the temperature probe 116. Further, thin film heater terminal electrodes 115 are formed at both ends of the thin film heater 117.

As a conventional method for diagnosing deterioration of the bonding layer between electrodes, the heater chip 109 is soldered and bonded, and a current is applied to the thin film heater terminal electrode 115 of the heater chip 109 to heat the thin film heater 117. The temperature distribution due to heat generation was measured, and deterioration of the bonding layer due to solder was detected based on the measurement data of the temperature distribution.

However, there are problems such as the Ni-P film (plating film) formed on the solder joint surface such as the back surface of the heater chip 109 being diffused and cracks being generated at the solder joint portion, and the state of the joint layer is quantitatively obtained. There was a problem that it could not be evaluated.

In the present invention, both sides of the SiC substrate 106 are roughened with femtosecond laser light or the like, and a thin film heater 117, a temperature probe 116, and a current application path 124 are formed on the roughened surface with a Ni-P film. Terminal electrodes are arranged at both ends of the thin film heater 117 and at the temperature probe 116 so that a current can be applied to the thin film heater 117 to form a heater tip 109.

A first thin film is formed on the back surface of the heater chip 109 with a Ni-P film 111, and a second thin film is formed on the thin film with In (indium) or an alloy containing In. Further, a first gold plating film is formed on the second thin film.

A third thin film is formed on the surface of the copper plate 104 with a Ni-P film 111, and a fourth thin film is formed on the thin film with In (indium) or an alloy containing In. Further, a second gold plating film is formed on the fourth thin film.
A bonding layer made of solder or the like is formed or arranged between the first gold plating film and the second gold plating film.

A predetermined constant current is applied to the thin film heater 117 as the heater chip 109, and the bonded layer made of solder or the like is heated by heat generated by the constant current, and the polished portion of the end face is observed or measured with an infrared thermography camera or the like. Observation or measurement is performed via the polyimide film 107. The temperature of the joint layer of the polished portion is measured at a plurality of points, and the temperature information ΔT between the plurality of points is obtained.

By forming a thin film or the like with In (indium) or an alloy containing In on at least one of the first thin film and the third thin film made of Ni-P film 111, solder and the like are bonded. Adhesion to the joint is improved, cracks are not generated in the joint, and the state of the joint can be measured or observed satisfactorily.

The joint layer or the like is heated by solder or the like from the heater chip 109, and the temperature of the joint layer is measured by an infrared thermography camera or the like to obtain temperature information (temperature distribution) Δ (delta) T between a plurality of points. With the temperature information ΔT, the state of the bonding layer can be quantitatively evaluated in a non-contact manner.

Based on the temperature information (temperature distribution) ΔT of the temperature distribution, it is possible to easily detect the deterioration of the bonding layer or the characteristics of the bonding layer. In addition, it is possible to easily evaluate the life of the solder joint layer and the like. In addition, the reliability of the deterioration state detection and the life evaluation is high.

It is explanatory drawing of the junction layer evaluation apparatus of this invention. It is a block diagram and sectional drawing of the heater chip of this invention. It is explanatory drawing of the manufacturing method of the heater chip of this invention. It is explanatory drawing of the junction layer evaluation apparatus of this invention. It is explanatory drawing of the junction layer evaluation apparatus of this invention. It is a flowchart of the manufacturing method of the heater chip of this invention. It is explanatory drawing of the manufacturing method of the heater chip of this invention. It is explanatory drawing of the junction layer evaluation apparatus of this invention. It is explanatory drawing of the junction layer evaluation apparatus of this invention. It is explanatory drawing of the structure and evaluation method of the joint layer evaluation apparatus of this invention. It is explanatory drawing of the operation of the joint layer evaluation apparatus of this invention. It is explanatory drawing of the operation of the joint layer evaluation apparatus of this invention. It is explanatory drawing of the evaluation method of the bonding layer of this invention. It is explanatory drawing of the evaluation method of the bonding layer of this invention. It is explanatory drawing of the evaluation method of the bonding layer of this invention. It is explanatory drawing of the thermal simulation of the bonding layer of this invention. It is explanatory drawing of the evaluation method of the bonding layer of this invention. It is a block diagram and sectional drawing of the heater chip of this invention. It is explanatory drawing of the evaluation method of the bonding layer of this invention. It is a cross-sectional SEM image of the joint portion by the conventional evaluation method. It is a cross-sectional SEM image of a joint portion in the evaluation method of the present invention. It is a reverse pole map directional map (IPF) after reflow by the evaluation method of this invention. It is a reverse pole figure direction map (IPF) after the TM test by the evaluation method of this invention. It is a block diagram and a sectional view of the conventional heater chip.

Hereinafter, with reference to the attached drawings, the configuration of the bonding layer, the evaluation method of the bonding layer, the bonding layer evaluation device, the heater chip of the present invention, and the driving method of the heater chip according to the embodiment of the present invention will be described.

In the embodiment described in the specification, it will be described as evaluating the bonding layer formed between the electrodes by soldering. However, the present invention is not limited to the bonding layer made of solder or the like.

Needless to say, it can be applied to, for example, a bonding layer bonded by silver paste or copper paste, a bonding layer formed by discharge processing, a bonding layer by high frequency induction heating, a bonding layer by electromagnetic induction heating, a bonding layer bonded by pressure bonding, and the like. stomach. The bonding layer 105 is not limited to the conductive material, and may be, for example, an organic insulating material such as an acrylic resin or an epoxy resin.

According to the present invention, a bonding layer arranged or formed between heated or overheated electrodes is observed using an infrared thermographic camera or the like. Therefore, it is not limited to electronic components having electrodes, wiring boards, and the like.

The joint layer 105 may also be referred to as a joint portion 105. The joint layer 105 is not limited to a layered shape, and may be formed or configured as a joint portion 105 three-dimensionally or independently. The present invention can also be applied to a wide variety of configurations or structures of connections.

In each drawing for explaining a mode for carrying out the invention, elements having the same function may be designated by the same reference numerals and the description thereof may be omitted. In addition, the examples of the present invention described in the present specification can be combined with each other.

The present invention comprises a first substrate, a second substrate, a first member, a heating means formed or arranged on a first surface of the first substrate, and a first of the first substrates. A current path formed or arranged on one surface, a current supply means for supplying a current to the heating means, and a connection layer arranged between the second substrate and the second surface of the first substrate. And a temperature measuring means for acquiring the temperature of the bonding layer from the infrared rays radiated from the bonding layer. The bonding layer 105 is formed in a state where a layer containing indium is formed on the layer facing the bonding layer 105.

The layer containing indium is diffused into the bonding layer or the like or alloyed with another metal when forming the bonding layer. Further, a gold plating film is formed between the layer containing indium and the bonding layer, and the gold of the gold plating film is also diffused into the bonding layer and the like.

Further, a bonding layer having a first substrate, a second substrate, a first member, and a resin member to join the second substrate and the first member is formed, and the bonding layer is in contact with the bonding layer. The joint surface is polished, the resin member is arranged so as to be in close contact with the joint surface, the first substrate is heated, the second substrate is maintained at a predetermined temperature, and a predetermined position of the joint surface is obtained. It is characterized in that the temperature information ΔT of is acquired in a non-contact manner.

FIG. 2 is a plan view and a cross-sectional view of the heater chip 109 of the present invention used in the joint layer evaluation device of the present invention. FIG. 2A is a plan view of the heater tip 109. 2 (b) is a cross-sectional view taken along the line AA'of FIG. 2 (a), and FIG. 2 (c) is a cross-sectional view taken along the line BB' of FIG. 2 (a).

As the base substrate 106, SiC (silicon carbide) is exemplified. SiC is a compound semiconductor material composed of silicon (Si) and carbon (C). A single crystal of SiC has high thermal conductivity, a small internal temperature distribution, and a high heat resistant temperature, which is preferable as a base substrate 106. In addition, as the base substrate 106, a glass substrate such as sapphire glass having insulating properties and good thermal conductivity, and a ceramic substrate made of alumina or silicon nitride are exemplified.

Materials such as SiC ceramics, AlN ceramics, and substrates filled with AlN (aluminum nitride) or AlN do not conduct electricity, but conduct heat well, so they can be used as the substrate 106 of the heater chip 109 of the present invention.

Further, as the base substrate 106, aluminum nitride (AlN) is exemplified. AlN is an aluminum nitride and is a colorless and transparent ceramic. Also known as aluminum night ride. AlN has a high thermal conductivity of 180 to 230 W / mK.
As the base substrate 106, BeO (beryllium oxide: commonly known as beryllium oxide) has a high thermal conductivity of 270 W / mK and can be used.

AlN may be processed into a disk shape by hot pressing or the like to make a ceramic product, but the basic is powder. It is required to control the particle size of the powder, but the reduction nitriding method can produce powders of 0.1 μm or less to about 10 μm. When used as a filler in a silicone resin or the like, the filling rate of the filler is improved by using a combination of AlN particles having different particle sizes.

In the reduction nitriding method, a _{mixture of alumina (Al 2} O ₃ ) and carbon (C) is nitrided to obtain Al N. After that, it is oxidized and the surface of AlN grains is covered with an oxide film. Compared with the direct nitriding method, the thickness of the surface oxide film is doubled to about 11 Å (angstrom). The final oxidation treatment removes the imide group (NH) and the amide group (N—H ₂ ) on the grain surface to produce pure AlN grains.

For ease of explanation herein. The base substrate 106 will be described as a substrate made of SiC. However, it goes without saying that the base substrate 106 may be any substrate as long as it has good thermal conductivity and has insulating properties or semiconductor properties.

The thickness of the base substrate 106 is preferably 0.1 mm or more and 0.8 mm or less. The thinner the base substrate 106, the easier it is for the heat from the thin film heater 117 to be transferred to the bonding layer 105. When the thickness of the base substrate 106 is thin, the temperature distribution in the bonding layer 105 is likely to occur in the portion where the thin film heater 117 is formed and the portion where the thin film heater 117 is not formed. The size of the heater tip 109 is preferably 3 mm square or more and 10 mm square or less.

In the present invention, the thermal simulation is carried out in consideration of the wiring width of the thin film heater 117 of the heater chip 109, the formation area of the bonding layer 105, and the thickness of the bonding layer 105. The size and thickness of the heater tip 109 are designed by thermal simulation. The size of the heater tip 109 is 3 mm or more and 30 mm or less for the width W1 and 3 mm or more and 30 mm or less for the width W2.
The thin film heater 117 and the temperature probe 116 are formed or configured of Ni (nickel) -P, or Ni.

A first thin film (Ni-P film 111d) by Ni-P plating is formed on the back surface of the SiC substrate 106. A second thin film 151a is formed by In plating on the first thin film. A gold plating film 112c is formed on the surface of the In plating film 151a.

The present invention is a structure of Ni-P / Au plating for soldering the conventional heater chip 109 described with reference to FIG. 24. The present invention has a structure in which a Ni—P / In / Au plating film is formed. According to the configuration of the present invention, In can be supplied into the molten solder at the time of reflow.

If In (indium) can be supplied to the molten solder, the above plating film configuration may be appropriately changed. For example, an anti-diffusion layer may be introduced between In and Au to prevent In from diffusing into the gold (Au) surface during storage of the heater tip 109. For example, a thin film made of Ni-P is exemplified.

The In plating film 151 may be only In, or may be an In alloy plating film containing two or more metals. Examples of the metal constituting the alloy include Ni, Cu, Pd, W, Mo, P, S, and Zn. The method for forming the In plating film 151 may be either an electroless plating method or an electrolytic plating method.

The above description is for the In plating film 151 on the heater chip 109 side, but as shown in FIG. 1 and the like, the In plating film 151b is also formed or arranged on the other surface of the solder layer 105. .. Needless to say, the above items can be applied to the above In plating film 151b.

FIG. 8 is an explanatory view centering on the joint portion of the joint layer evaluation device of the present invention. FIG. 8A shows a state before soldering. FIG. 8B shows the state after soldering.

As shown in FIG. 8A, a Ni-P plating film 111a is formed or arranged on the copper plate 104. The In plating film 151b is formed or arranged on the Ni-P plating film 111a. Further, the gold plating film 112a is formed or arranged on the In plating film 151b.
As shown in FIG. 8A, the In diffusion prevention film 153 may be formed or arranged on the In plating film 151b.
Examples of the In diffusion prevention film 153 include an electroless Ni-P plating film and an electrolytic Ni plating film.

FIG. 8B shows a state in which the solder layer (bonding layer) 105 is formed or arranged on the gold plating film 112a. As shown in FIG. 1, the solder layer 105 is formed or arranged between the gold plating film 112c and the gold plating film 112a.

In FIG. 1 and the like, in order to facilitate understanding of the structure and the like of the joint layer evaluation device of the present invention, the alloy film 152, the In diffusion prevention film 153 and the like as shown in FIGS. 8 (b) and 9 (b) are used. Not shown.

However, in reality, as shown in FIGS. 8 (b) and 9 (b), the gold constituting the gold plating film 112 and the In forming the In plating film 151 are soldered to form the bonding layer 105. After that, it does not remain on each film (gold-plated film, In film). Further, the alloy layer 152 does not contain In and Au. Normally, after soldering, In and Au are solid-solved in the Sn layer 105. Therefore, it is necessary to replace the film structure shown in FIG. 1 and the like with the film structure shown in FIGS. 8 and 9 to be exact.

As shown in FIG. 8B, when the solder layer (bonding layer) 105 is formed, the alloy layer 152 is formed on the Ni-P film 111a. As the alloy layer 152, (Ni, Cu) ₃ Sn ₄ is exemplified. Although not shown in FIG. 8B, a P-rich film may be formed between the solder layer (Sn) 105 and the alloy film 152.
The above items are the same for the gold-plated film 112c and the In film 151a.

As shown in FIG. 8B, the In plating film 151 and the gold (Au) plating film 112 do not remain after soldering. Further, the formed alloy film 152 does not contain In and Au. After soldering, In and Au are solid-solved in the Sn layer (solder layer) 105.

Hereinafter, the In film 151b on the copper plate 104 will be mainly described. The In film 151 is formed at the joint portion as a solder layer (joint layer) 105. Therefore, as shown in FIG. 3, the In film 151b is also arranged, formed or formed on the solder layer (bonding layer) 105 as a lower layer.

FIG. 4 is an explanatory diagram of the relationship between the In film thickness (or the film thickness of the In alloy) and the remaining Ni film thickness (relative ratio). The larger the remaining film thickness of the Ni film of the Ni-P film 111, the better the state of the bonding layer. As an example, it is desirable that the thickness of In151 is 0.1 μm or more and 10 μm or less when the solder layer is 100 μm.

The total In thickness is the sum of the film thickness of the In film 151a plated on the upper surface of the solder layer (bonding layer) 105 + the film thickness of the In film 151b plated on the lower surface of the solder layer (bonding layer) 105. The thickness.

As shown in FIG. 4, the In film thickness 151 is not effective when the film thickness is 0.1 μm or less, and the solder layer changes to the InSn layer when the film thickness is 10 μm or more, which is not preferable. By setting the In film thickness 151 in the range of 0.5 μm or more and 5 μm or less, the remaining Ni film thickness can be stabilized and a predetermined film thickness can be maintained.
The process of forming an In film between the Ni-P film 111 and the gold-plated film 112 (Ni-P / In / Au process) suppresses TM (thermomigration).
The side where heat is applied to heat (hot side: Hot side) and the opposite side (cold side: Cold side) are displayed.

FIG. 20 shows a case of a conventional Ni-P / Au process (a structure or process in which a Ni-P film (plating film) 111 and a gold plating film 112 are laminated). It is an SEM photograph of the joint portion of the copper (Cu) plate 104 and the solder layer 105 after the TM (thermomigration) test.

_{In FIG. 20, Ni 2} SnP and P-rich are formed between the solder layer (bonding layer) 105 and the hot-side copper plate 104. The gold-plated film 112a is diffused, the Ni-P film 111 becomes a Ni ₂ SnP, P-rich layer, and the Ni-P film 111 disappears. Due to the disappearance of the Ni-P film 111, cracks and the like are likely to occur at the joint.
The bonding layer in FIG. 20 is an SEM photograph between the copper plate 104 and the solder layer (bonding layer) 105, but the same is true between the solder layer (bonding layer) 105 and the heater chip 109.

FIG. 21 shows the case of the Ni-P / In (1 μm) / Au process (structure or process in which the Ni-P film (plating film) 111, the In film 151, and the gold plating film 112 are laminated) of the present invention. It is an SEM photograph of the joint portion of the copper (Cu) plate 104 and the solder layer 105 after the TM (thermomigration) test. The Ni-P film 111a, the In film 151b, and the gold-plated film 112a are laminated on the surface in contact with the bonding layer 105.
_{In FIG. 21, (Ni, Cu) 3} Sn ₄ and P-rich are generated between the copper plate 104 and the solder layer (bonding layer) 105, and Ni-P111a remains.

The gold (Au) of the gold plating film 112a and the In of the In plating 151b are diffused, and the Ni-P film 111a remains. The remaining Ni-P film 111 stabilizes the bonded state of the bonded portion.

The disappearance of the Ni-P layer on the Hot side is prevented, and the coarse deposition of the alloy layer on the Cold side is prevented. Therefore, the disconnection of the solder joint due to the TM test is prevented or suppressed.

Similarly, the structure of the Ni-P / In (1 μm) / Au process of the present invention is also between the base material 106 of the heater chip 109 and the solder layer (bonding layer) 105. The Ni-P film 111d, the In film 151a, and the gold-plated film 112c are laminated. This case is also the same as in FIG.

Although the thin film 111 is described as a Ni-P film, the thin film 111 may also be formed of Ni or Ni-B. The thin film 111 may be any material as long as it can be bonded to the bonding layer 105 with good adhesion. In addition to nickel (Ni), for example, tin, silver, gold, copper, lead, zinc, alloys thereof, and the like are exemplified. However, when used as the configuration of the thin film heater 117, an appropriate resistor needs to be present. This is because the thin film heater 117 or the like is used as a heat generating element.

FIG. 22 is an IPF map (reverse pole map orientation map) after reflow in the Ni-P / In (1 μm) / Au process or structure of the present invention. The C-axis of β-Sn after reflow is oriented so as to be parallel to the joint surface.

FIG. 23 is an IPF map after the TM test in the Ni-P / In (1 μm) / Au process or structure of the present invention. The C-axis of β-Sn after reflow is oriented so as to be parallel to the joint surface. This tendency is the same after the thermomigration (TM) test of FIG. 23 as well as after the reflow of FIG.

As shown by the dotted line frames in FIGS. 22 and 23, in the Ni-P / In / Au process, the C-axis of β-Sn of the solder layer after reflow is oriented so as to be parallel to the solder joint surface. In the c-axis direction of β-Sn, the diffusion of Cu and Ni in β-Sn is faster than in the a-axis direction and the b-axis direction.

In the present invention, Ni or Ni-P, which can be in close contact with the bonding layer 105 and has a relatively high resistance value because it is used as a thin film heater 117, is exemplified. Hereinafter, in the present specification or the drawings, the thin film 111 will be described as a Ni-P film 111 for the sake of simplicity.
The film thickness of the Ni-P film 111d is preferably 1 μm or more and 10 μm or less. In particular, the film thickness is preferably 2 μm or more and 6 μm or less.

The film thickness of the gold plating film 112c is 0.01 μm or more. The gold-plated film 112c has a function of preventing or suppressing oxidation or contamination of the surface of the Ni-P film 111d.

A thin film heater 117 and a temperature probe 116 are formed on the surface of the SiC substrate 106. The thin film heater 117 and the temperature probe 116 are formed of a thin film by Ni-P plating. In addition to Ni, it may be composed of or formed of platinum (Pt). In addition, zinc, tin, lead, chromium and the like can also be used. Other than metal, for example, it can be formed of carbon (C).
As shown in FIG. 5, the film thickness (μm) of the thin film heater 117 and the sheet resistance value (Ω / sq) of the thin film heater 117 of the thin film heater 117 have a substantially linear relationship.

As shown in FIG. 5, as the film thickness of the thin film heater 117 becomes thicker, the sheet resistance value (Ω / sq) tends to be relatively small and has a non-linear relationship (the film thickness (μm) of the thin film heater 117). > 10.0 (μm)). Further, when the film thickness of the thin film heater 117 becomes thin, the sheet resistance value (Ω / sq) tends to be relatively high and tends to have a non-linear relationship (the film thickness (μm) of the thin film heater 117 <0.1 (μm). )). This is probably because the surface of the SiC substrate 106 is roughened and the thin film heater 117 is formed in a curved shape.

It is preferable to adopt a region in which the film thickness of the thin film heater 117 and the sheet resistance value (Ω / sq) have a linear relationship. Therefore, the film thickness of the thin film heater 117 is preferably 0.1 (μm) or more and 7.5 (μm) or less, and the sheet resistance value (Ω / sq) is 0.25 (Ω / sq) or more. It is preferably 00 (Ω / sq). The resistance value of the thin film heater 117 is preferably 5Ω or more and 300Ω or less.

The temperature probe 116 illustrated in FIG. 2 is formed of the same material as the thin film heater 117 and in the same process process. When the thin film heater 117 is a Ni-P film, the temperature probe 116 is also formed of the Ni-P film. The temperature probe 116 is formed with a narrow wiring width to increase the resistance value over the entire length.

A constant current is applied to the temperature probe 116. By increasing the resistance value of the temperature probe 116, the change in the resistance value becomes large, and the voltage change between the terminals of the temperature probe 116 with respect to the constant current becomes large. Therefore, the sensitivity of the thin film heater 117 detected by the temperature probe 116 with respect to the temperature change becomes good. The resistance value of the temperature probe 116 is manufactured or formed to be 20 Ω or more and 1 kΩ or less.

Terminal electrodes 114a and terminal electrodes 114b are formed at both ends of the temperature probe 116. Terminal electrodes 115a and terminal electrodes 115b are formed at both ends of the thin film heater 117. A gold-plated film 112 is formed on the surface of the terminal electrode 114 and the like. A gold-plated film 112 is formed on the surface of the terminal electrode 115 and the like. The film thickness of the gold plating film 112c is 0.01 μm or more.

The gold plating film 112 is not formed on the thin film heater 117 and the temperature probe 116. This is because when the gold-plated film 112 is formed, the resistance values of the thin film heater 117 and the temperature probe 116 decrease, and the sensitivity to heat generation or temperature change decreases.

A SiO ₂ film, a SiN _x film, and a SiON film may be formed on the thin film heater 117 and the temperature probe 116 to prevent the surfaces of the thin film heater 117 and the temperature probe 116 from being oxidized or contaminated.

Although 117 is described as a thin film heater, the present invention is not limited to this. The thin film heater 117 is arranged or formed to heat the substrate 106. As an alternative to the thin film heater 117, a surface heater incorporating a nichrome wire, a heater using a Perche element, or the like may be used. The base substrate 106 can be heated by a surface heater incorporating a nichrome wire and a current flowing through a Perche element.

A lead wire 121 is soldered to the terminal electrode 114 and the terminal electrode 115, or a probe (not shown) is pressed against the terminal electrode 114, and a constant current output by the current power supply device 803 is applied to the terminal electrode 114 or the terminal electrode 115.

6 and 7 are explanatory views of a method for manufacturing the heater chip 109 of the present invention. FIG. 6 is a flowchart showing a method for manufacturing a heater chip. 7 (a) to 7 (f) are explanatory views for explaining a method of manufacturing the heater chip 109.

A mask 501 is applied to the surface of the SiC substrate 106 (FIGS. 6S11 and 7B). The mask 501 preferably contains an alkali-soluble type acrylic polymer.

Next, the surface of the SiC substrate 106 is roughened using a femtosecond laser device (FIGS. 6 S12 and 7 (c)). By irradiating the femtosecond laser beam 502 or the picosecond laser beam 502, the portions of the surface of the SiC substrate 106 corresponding to the thin film heater 117, the temperature probe 116, the terminal electrode 114, and the terminal electrode 115 are removed to form a square groove. A recess 503 is formed. The bottom surface and side surfaces of the recess 503 are roughened (roughened) by irradiation with a femtosecond laser beam 502 or the like.

The roughening by the femtosecond laser beam 502 is also carried out at the locations corresponding to the terminal electrodes 114 and the terminal electrodes 115. A Ni-P film 111 is formed at a portion to be roughened.

The terminal electrode 114 and the terminal electrode 115 have a large roughened area. The line width of the 116 parts of the temperature probe is narrow. It is preferable that the roughened state of the 116 part of the temperature probe is changed depending on the area to be roughened so as to increase the roughening (deepen the unevenness generated by the roughening).
The roughened state can be easily realized by changing or setting the laser intensity of the femtosecond laser beam 502 and the moving speed of the irradiated laser pulse.

A Ni-P film 111d is also formed on the back surface of the SiC substrate 106. Therefore, the surface of the SiC substrate 106 where the Ni-P film 111d is formed is also roughened by the femtosecond laser beam 502.

A femtosecond laser device generally generates a femtosecond laser beam 502 with a pulse width of subpicoseconds to several tens of femtoseconds. When the material is irradiated with an ultrashort pulse laser beam 502 of subpicoseconds to several tens of femtoseconds, the pulse width is sufficiently shorter than the thermal diffusion characteristic time of the material, so that light energy can be effectively applied to the irradiation unit.

As a result, the heat effect on the irradiation peripheral portion can be limited, and high-precision microfabrication can be realized. Further, since the electric field intensity of the laser beam is very high, it is possible to induce non-linear actions such as multiphoton absorption and multiphoton ionization spatially selectively only in the place where the beam is focused.

By irradiating the pulse of the femtosecond laser beam 502, the portion of the mask 501 corresponding to the portion forming the thin film heater 117 and the temperature probe 116 is removed, and the recess 503 is formed.

Wiring patterning (thin film heater 117, temperature probe 116, etc.) may be performed based on the marks formed on the surface of the mask 501. Positioning is performed based on the cross mark 130 (not shown) or the like formed on the SiC substrate 106.

The cross mark 130 formed on the SiC substrate 106 is captured by a camera, the cross mark 130 is image-recognized, the position of the cross mark 130 is compared with the design coordinates, and the patterning (thin film heater 117, temperature probe 116, etc.) position (laser light). The laser beam 502 is radiated by positioning the position to irradiate the laser beam 502.

The SiC substrate 106 is degreased with an acidic degreasing agent at, for example, at 45 ° C. for 5 minutes (FIG. 6S13). Predip treatment is performed using a hydrochloric acid-based aqueous solution (FIG. 6S14). The holding time is, for example, 2 minutes.

Next, the Sn-Pd catalyst 504 is applied to the surface of the recess 503 and the surface of the remaining portion of the mask 501 (FIGS. 6 S15 and 7 (d)). The Sn-Pd catalyst 504 is a colloidal particle, and a Sn-rich layer and a Sn2 + layer are sequentially formed on the surface of the core portion of Sn-Pd.

Next, activation is performed (FIG. 6 S16). By immersing the SiC substrate 106 to which the Sn-Pd catalyst 504 is applied in a hydrochloric acid-based solution, the Sn layer is removed and the internal Pd catalyst is exposed. Since the Pd catalyst is exposed, a reaction by the electroless Ni-P plating solution occurs in the portion where the Sn—Pd catalyst 504 is present.

The mask 501 is peeled off using an alkaline solution (FIGS. 6 S17 and 7 (e)). The Sn-Pd catalyst 504 does not exist in the portion of the SiC substrate 106 from which the mask 501 has been peeled off.

The mask 501 is peeled off using an alkaline solution (FIGS. 6 S17 and 7 (e)). The Sn-Pd catalyst 504 does not exist in the portion of the SiC substrate 106 from which the mask 501 has been peeled off.

Electroless Ni-P plating is performed on the surface of the SiC substrate 106 to form a thin film heater 117 and a temperature probe 116 (FIGS. 6 S18 and 7 (f)). As the electroless Ni-P plating solution, a reduction precipitation type electroless Ni-P plating solution using sodium hypophosphite as a reducing agent in the acidic region to the neutral region can be used.

As the chelating agent, malic acid, citric acid, oxycarboxylic acids such as malonic acid and tartrate, monocarboxylic acids such as acetic acid and succinic acid, and amines such as ammonia and glycine should be used alone or in combination. Can be done.
Pd that functions as a catalyst is added so that the reducing agent in the electroless Ni-P plating solution emits electrons on the SiC substrate 106.

Therefore, Ni ions in the electroless Ni plating solution are reduced by the electrons released by the oxidation reaction of the reducing agent and precipitated on the surface of the SiC substrate 106 to form the thin film heater 117 and the temperature probe 116.

According to this embodiment, Ni-P plating having good adhesion can be easily performed on a SiC substrate 106 made of a difficult-to-plating material without using a special chemical solution or photolithography technique. ..

In the present embodiment, the mask 501 is used, and the Sn-Pd catalyst 504 is left only in the roughened portion of the SiC substrate 106 corresponding to the thin film heater 117 and the temperature probe 116 to perform plating. The patterning accuracy of the temperature probe 116 is good, and surface polishing is not required.

The wiring pattern is easily formed in a state where the portion other than the portion corresponding to the wiring pattern is protected by the mask 501. Since electroless Ni-P plating 111 is performed only on the roughened portion, a thin film heater 117 or the like having a desired thickness can be formed.

A plurality of heater chips 109 are manufactured on one SiC substrate in a matrix and at the same time. After the Ni-P film is formed, each heater chip 109 is shaved (laser dicing) by irradiating the outer frame portion of each heater chip 109 with carbon dioxide laser light, YAG laser light, or the like, and is divided into individual pieces. Further, the heater chips may be divided into 109 pieces by dicing (wet) or scribe (dry).

The Ni-P plating film 111 of FIG. 7 (f) corresponds to the Ni-P plating film 111d of FIG. An In film or an In alloy film 151a is formed or arranged on the Ni-P plating film 111d. The formation of the In film 151a or the In alloy film 151a is carried out by electroplating or electroless plating technology.

A gold-plated film 112c is formed on the In film 151a or the In alloy film 151a. An In diffusion prevention film 153 is formed between the In film 151a or the In alloy film 151a and the gold plating film 112c, if necessary.

In in the In film 151a or the In alloy film 151a and Au in the gold plating film 112c do not remain after soldering. In and Au are solid-solved in the solder layer (Sn layer) 105.

In FIG. 8A, a Ni-P plating film 111a is formed on the copper plate 104, and an In film 151b or an In alloy film 151b is formed or arranged on the Ni-P plating film 111a. The formation of the In film 151b or the In alloy film 151b is carried out by electroplating or electroless plating technology.

A gold-plated film 112a is formed on the In film 151b or the In alloy film 151b. An In diffusion prevention film 153 is formed between the In film 151b or the In alloy film 151b and the gold plating film 112a, if necessary.

In in the In film 151b or the In alloy film 151b and Au in the gold plating film 112a do not remain after soldering. In and Au are solid-solved in the solder layer (Sn layer) 105.

FIG. 3 is an explanatory diagram for explaining the configuration of 104 parts of the copper plate. The copper plate 104 will be described as a substrate made of copper for the sake of brevity, but the description is not limited thereto. Any substrate, sheet or thin film having good thermal conductivity may be used, or the structure may be used.

For example, a substrate made of carbon graphite, a ceramic plate, a stainless steel plate, a nickel plate, a silver plate, a copper thin film, and a copper vapor deposition film are exemplified. In the present specification, the copper plate 104 will be described for ease of explanation.

As an example, the copper plate 104 is a copper plate of 0.1 mm or more and 2 mm or less. The copper plate 104 is preferably an oxygen-free copper plate. A Ni-P film 111a and a Ni-P film 111b are formed on the surface of the copper plate 104. The thickness and forming method of the Ni-P film 111a and the Ni-P film 111b are the same as those of the Ni-P film 111a, and thus the description thereof will be omitted.

As shown in FIGS. 3 and 9A, a Ni-P film 111a is formed or arranged on the copper plate 104. An In film or an In alloy film 151b is formed or arranged on the Ni-P film 111a. A gold-plated film 112a is formed on the In film 151b or the In alloy film 151b.

Further, as shown in FIG. 9B, a solder layer (bonding layer) 105 is formed on the gold plating film 112a of FIG. 9A. By forming the solder layer (bonding layer) 105, In of the In film 151b and Au of the gold plating film 112a are diffused, and the alloy layer 152 is formed between the solder layer 105 and the Ni-P film 111a.
A Ni-P film 111b is formed or arranged under the copper plate 104. A gold-plated film 112b is formed or arranged under the Ni-P film 111b.
The gold-plated 112b side of the copper plate 104 is thermally connected to the heating / cooling plate by thermal paste or the like.

FIG. 10 is an explanatory diagram of a configuration of a joint layer evaluation device according to an embodiment of the present invention. FIG. 10A shows the manufactured heater tip 109. As shown in FIG. 10B, the heater tip 109 of FIG. 10A is joined to the copper plate 104 by the joining layer 105.
A gold-plated film 112a is formed on the surface of the In film 151b, and a gold-plated film 112c is formed on the surface of the In film 151a.
A bonding layer 105 to be evaluated is formed between the gold plating 112c of the heater chip 109 and the gold plating 112a of the copper plate 104.

As an example, the bonding layer 105 is solder, and a solder sheet (solder cream) is screen-printed on the copper plate 104. The heater chip 109 is mounted on the solder sheet. After mounting, the copper plate 104 and the heater tip 109 are integrally put into a reflow furnace set under certain conditions. A solder paste may be used instead of the solder sheet.

The bonding layer 105 is not limited to the bonding layer made of solder or the like. Needless to say, it can be applied to, for example, a bonding layer bonded with silver paste or copper paste, a bonding layer formed by discharge processing, a bonding layer by high frequency induction heating, a bonding layer by electromagnetic induction heating, and the like. Further, the bonding layer and the insulating material that are bonded by pressing an organic substance are also bonding layers, and the temperature information ΔT can be measured by an infrared thermographic camera 108 or the like.

The infrared thermographic camera 108 can measure the two-dimensional temperature distribution of the junction layer 105 and the like. By measuring two-dimensionally, it is possible to visually express and measure the change in temperature centering on points A, B, and the like. However, for the purpose of obtaining the temperature information ΔT at a specific position such as points A and B, the temperature information ΔT can be acquired by measuring with a radiation thermometer.
In the present specification, for ease of explanation, the bonding layer 105 will be described as being formed by heating a solder cream or a solder sheet in a reflow step.
When soldering in the reflow process, a solder cream or the like is printed in advance at a designated place, and the solder cream or the like is heated and melted in a reflow furnace to join the parts.

At first glance, the solder cream appears to have been soldered normally, but the solder is still in the state of fine particles and cannot perform its normal function. By heating this in a reflow furnace, the solder that was particles are joined, and the flux is also vaporized by heat, so that it becomes the same state as normal solder and is soldered.

The temperature of the solder melted by the flow solder and the temperature of the reflow solder furnace are also different. It is important to understand the thermal resistance of the parts used and to design an appropriate process. By measuring the temperature information ΔT of the bonding layer with the bonding layer evaluation device of the present invention, the bonding layer 105 can be quantitatively evaluated and detailed design can be performed.

In the evaluation method and the bonding layer evaluation device of the bonding layer 105 of the present invention, the bonding layer 105 is heated by the heater tip 109, and the change or the heating state corresponding to the heating conditions (reflow furnace conditions) is changed. Further, the bonding layer 105 is formed by making the material mixed state of the bonding layer (mixing ratio of flux and solder, etc.) and the difference in the materials used (difference in flux or solder material, etc.) different.

The formed bonding layer 105 is measured by an infrared thermographic camera 108 to acquire a temperature distribution state, temperature information ΔT, and the like. By acquiring the temperature information ΔT, the life and bonding characteristics of the bonding layer are quantitatively evaluated.

As shown in FIG. 10B, the heater tip 109 and the copper plate 104 are joined by the joining layer 105. Next, as shown in FIG. 10 (c), the heater tip 109, the copper plate 104, and the bonding layer 105 are simultaneously polished to the CC'line from the A direction.

In the grinding process, for example, a large circular tool called a grindstone is rotated at high speed and the surface is brought into a smooth state by hitting the surface of the tool to be processed. Innumerable large abrasive grains are attached to the surface of this grindstone, and it is possible to scrape minute protrusions and the like on the surface of the object.

Preferably, the polishing is performed by CP (Cross section polisher) processing (ion milling). CP processing (ion milling) is to irradiate a sample with an unfocused broad argon ion beam and scrape the sample by utilizing a sputtering phenomenon in which sample atoms are blown off. An argon ion beam is incident on the surface of the sample to prepare the sample. In CP processing, heat is not generated on the polished surface, and there is no influence of heat on the bonding layer 105.

Next, as shown in FIG. 10D, a photosensitive polyimide film is formed on the polished surface. The photosensitive polyimide film is formed on the polished surface by a spin coating method, a slit coating method, a screen printing method, an inkjet spraying method, a spray coating method, a die coating method, a doctor knife coating method, flexographic printing, or the like. .. The portion where the photosensitive polyimide film is formed includes at least the bonding layer 105.

As shown by the arrow in FIG. 10D, the exposure is performed by irradiating an irradiation amount of 200 to 2000 mJ, ultraviolet rays, or the like through a photomask having an arbitrary pattern.

As the developing solution, an alkaline developing solution, for example, an aqueous solution of an inorganic alkali such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, or aqueous ammonia can be used. Development is carried out at about 15 ° C. to 60 ° C. for about 0.5 to 10 minutes. Heating for curing is performed at about 120 ° C. to 200 ° C. for about 30 minutes to 120 minutes.

An object emits infrared rays from its surface, and the temperature of the surface of the object is determined by the amount of infrared rays. Infrared rays also have the characteristic of carrying energy through space. The infrared thermographic camera 108 optically reads the infrared rays transmitted through this space and measures the temperature without contacting the object. The infrared thermographic camera 108 has an autofocus function.

The ratio of the actual amount of thermal radiation energy radiated by the object to be measured and the amount of thermal radiation energy of a complete radiator (blackbody) at the same temperature is called emissivity.
A perfect radiator (blackbody) absorbs all the energy incident on it and radiates energy corresponding to its temperature. The infrared thermographic camera 108 is calibrated with the emissivity of a complete radiator (blackbody) set to 1.0, and the emissivity is preset and corrected in actual object measurement.

If the constituent material or composition of the polished surface is different, the emissivity, which is the ratio of the amount of thermal radiant energy, is different. However, if the constituent material or composition of the polished surface is corrected, a difference may occur due to the correction. Also, objects with high reflectance, such as polished metal, are not suitable for measuring emissivity.

As shown in FIG. 10D, the present invention forms a photosensitive polyimide film 107 on the bonding layer 105 of the polished surface. If the emissivity of the photosensitive polyimide film 107 is measured and set in advance, the formed bonding layer 105 is not affected by the constituent materials or constituent compositions of the polished surface, and the formed bonding layer 105 is formed by an infrared thermography camera 108, a radiation thermometer, or the like. It is possible to accurately acquire the temperature distribution state, temperature information ΔT, etc. by measuring with. By acquiring the temperature information ΔT and the like, the life and bonding characteristics of the bonding layer can be quantitatively evaluated.

In the above examples, it is assumed that the photosensitive polyimide film 107 is formed on the polished surface, but the present invention is not limited to this. For example, a heat-resistant polyimide film 107 may be attached. Further, the heat-resistant polyimide film 107 may be arranged in close contact with the bonding layer 105 or the like.

Examples of the polyimide film 107 or the polyamide film 107 include Kapton (registered trademark) manufactured by DuPont of the United States, Upirex (registered trademark) manufactured by Ube Industries, and Uniamide (registered trademark) of Unitika Ltd.

Since the infrared thermography camera 108 and the radiation thermometer use infrared radiation for temperature measurement, the response speed is faster than that of a resistance temperature detector or a thermocouple. It is possible to measure the temperature of an object with a small heat capacity, an object with a small thermal conductivity, and an object with a small area. Temperature measurement can be performed without contact.

As described in FIG. 10 (c), the observation surface is polished along the CC'line. The surface is smoothed by polishing, and good observation is possible. The polished bonding layer may have high reflectance, in which case it is not suitable for measuring emissivity.

The present invention stabilizes the emissivity from the observation surface and quantitatively measures the emissivity by forming or arranging a photosensitive polyimide film, a polyimide film 107, a polyamide film 107, etc. on the surface to be polished and observed. It is configured so that it can be done.
The photosensitive polyimide film is not cured, and the emissivity can be stably measured even in the coated state.

Next, as shown in FIG. 10 (e), the copper plate 104 and the heating / cooling plate 101 are attached. For mounting, thermal paste 118 is used as an example. Thermal paste 118 exemplifies modified silicone grease. It is preferable to use this grease mixed with particles (filler) of a metal or metal oxide having high thermal conductivity.

In addition to copper, silver, aluminum and the like, alumina, magnesium oxide, aluminum nitride and the like are mainly used as particles. Disperse these simple substances or mixtures using a dispersion method commensurate with their particle diameter.

Even if an appropriate viscosity is maintained immediately after application, it may deteriorate and harden over time after use. Therefore, the solidified grease may be cracked due to the difference in the coefficient of linear expansion of the materials to be joined, and the conduction characteristics may be deteriorated.

The connection with the thermal paste 118 may be made only by pressing the upper and lower parts, but it is preferable to carry out low temperature reflow to ensure reliable adhesion, especially when a high temperature is expected.

As shown in FIG. 10 (e), the bonding layer 105 and its vicinity are observed with an infrared thermographic camera 108 or the like via a polyimide or polyamide film or film.

The infrared thermographic camera 108 is mounted on the XYZ stage 110. The XYZ (X-axis, Y-axis, Z-axis) stage 110 moves and positions in the X-axis direction (left-right direction), moves and positions in the Y-axis direction (distance between the joint layer 105 and the camera 108), and moves and positions in the Z-axis direction (up and down). (Direction) movement and positioning. The axial movement of the XYZ stage 110 has a positioning accuracy of 1 μm. It also rotates in the θ direction as needed.

Needless to say, the heating / cooling plate 101 may be mounted or loaded on the XYZ stage 110, and the heating / cooling plate 101 may be moved or positioned in the X-axis, Y-axis, and Z-axis directions.
FIG. 1 is an explanatory diagram of a bonding layer evaluation method and a bonding layer evaluation device of the present invention. A circulating water pipe 102 is arranged in the heating / cooling plate 101.

It has a chiller (cooling / heating device) 103, a heating / cooling plate 101, and a circulating water pipe 102 that circulates between the heating / cooling plate 101 and the chiller 103. The heating / cooling plate 101 is loaded with a heater chip 109 having a bonding layer 105 of an evaluation object and a copper plate 104.

A constant current Ib (see FIG. 11) is applied to the thin film heater 117 from the current power supply device 803b via the terminal electrode 115a and the terminal electrode 115b. The temperature probe 116 applies a constant current Ia (see FIG. 11) from the current power supply device 803a via the terminal electrode 114a and the terminal electrode 114b.

A constant current Ia is passed through the thin film heater 117 to heat the bonding layer 105. During the evaluation result or evaluation, the evaluation of the evaluation sample is stopped or the control method is changed.

The change in the characteristics of the evaluation sample is determined or determined by the change in the temperature information ΔT or the temperature information ΔT obtained by observing with the infrared thermographty camera 108. Alternatively, the characteristics and state of the bonding layer 105 are evaluated.
In the method for evaluating a bonded layer of the present invention, external conditions are changed or set according to deterioration of the bonded layer 105 or a change in characteristics.

For example, when the change in the bonding layer 105 is large, or when the temperature of the bonding layer 105 is higher than a predetermined value, the current Ib flowing through the heater chip 109 is reduced. In addition, the temperature of the refrigerant (water, etc.) flowing through the circulating water pipe 102 is lowered. When the change in the bonding layer 105 is small, or when the temperature of the bonding layer 105 is lower than a predetermined value, the current Ib flowing through the heater chip 109 is increased. In addition, the temperature of the refrigerant (water, etc.) flowing through the circulating water pipe 102 is raised.

The chiller 103 is configured so that the temperature of the equipment or the like can be kept constant by circulating the water or the liquid temperature of the heat medium while controlling the temperature. It is often used mainly for cooling, but it can be heated as well as cooled. It is configured so that various temperature controls can be performed.

In addition, although it is described as circulating water in this specification, it is not limited to water. Ethylene glycol, glycerin, etc. may be used, or forced air cooling may be used. The chiller 103 supplies the liquid in the circulating water pipe 102 to the heating / cooling plate 101 of the test unit, for example, by controlling the water temperature in the range of -1 ° C. to + 100 ° C. The heating / cooling plate 101 has a sufficiently large heat capacity.

Although the heating / cooling plate 101 is used in the above embodiment, the heating plate and the cooling plate may be separated and heated / cooled by using a heat source / cooling heat source other than the heating / cooling plate.

In the bonding layer evaluation method and the bonding layer evaluation device of the present invention, the bonding layer 105 is quantitatively evaluated by measuring or acquiring the temperature distribution state of the bonding layer 105 and its vicinity.

The characteristics of the bonding layer 105 and the like differ depending on the state of voids in the bonding layer 105, the alloy ratio of the solder metal material, the flux content, the type of the solder metal material, and the melting ratio of impurities in the solder metal material. These change or differ depending on the reflow conditions (temperature, time, temperature change rate) and the like.

In a normal void, a gasified flux is mainly generated by staying in the bonding layer 105. When the lead is thin or small, if the amount of solder is sufficient, it can be considerably eliminated by lengthening the melting point or higher. This is eliminated by suppressing the surface tension of the molten solder by the flux effect and releasing the gas from the inside of the bonding layer 105 by heat convection. At the same time, gas is also released from the surface of the substrate and component leads.
In BGA and CSP, which are packaged or mounted parts, solder is printed under the parts, so the generated gas tends to stay at the bottom of the parts. The gas is released from the inside of the ball to the outside as long as the
On the contrary, in the leadless parts and power-related parts, since there is no gap between the parts and the board land, the generated gas and the flux residue remain under the parts as they are and form a large void.
Voids are generated when the gas generated during mounting is not discharged to the outside due to insufficient fluidity of the solder, short melting time, or the like.

Electronic components, substrates, and solder paste absorb moisture and are generated as water vapor during reflow. The gaps between the particles generated during solder printing become voids after reflow. Printed wiring boards and electronic components have recesses, and when mounted on them, a gap is created between the recess and the component, and solder does not flow in and becomes a void. Voids in the crack path accelerate crack progression. The relationship between void occupancy and fatigue life is shown.

The bonding layer evaluation method and the bonding layer evaluation device of the present invention are effective because they can quantitatively evaluate the bonding layer 105 and the state in the vicinity of the bonding layer 105 by acquiring the temperature distribution state, temperature information ΔT, and the like. ..

The temperature information ΔT is large in and around the portion where the joint layer 105 is deteriorated by the thermal fatigue test. The temperature information ΔT changes according to the overheating (heating) state and the overheating (heating) time by the heater tip 109. By measuring the temperature distribution after the lapse of time, the life of the joint 105 can be predicted.

When the bonding layer evaluation method and the bonding layer evaluation device of the present invention are used, the occurrence of cracks can be confirmed at the initial stage of heating. Further, by using the bonding layer evaluation method and the bonding layer evaluation device of the present invention, temperature information ΔT and temperature distribution data based on the void distribution state, flux distribution state, metal or composition material of the bonding layer 105, alloy state, etc. Can be obtained or measured. The state of the junction layer 105 can be quantitatively evaluated from the acquired or measured temperature information ΔT and the temperature distribution data. In addition, the characteristics, life prediction, and failure rate of the bonding layer 105 can be quantitatively evaluated and determined.

By using the bonding layer evaluation method and the bonding layer evaluation device of the present invention, it is possible to easily grasp the remaining life of the bonding layer 105 in a non-destructive manner by calculating whether the deterioration is progressing or the progress rate. Can be calculated. It can also be applied to thermomigration (TM) tests.
In order to diagnose the deterioration of the bonding layer (bonding layer) 105, first, the temperature difference is extracted from the measurement data of the temperature distribution, and if necessary, the temperature difference over time is extracted.

After that, by analyzing the extracted data, it is possible to evaluate the characteristics of the bonding layer 105 and detect deterioration or change of the bonding layer 105. It is also possible to evaluate or predict the lifetime of the junction layer by analyzing this data.

In the case of an infrared thermography camera, it is possible to display the measurement data of the temperature distribution as an image, extract the temperature difference over time from the obtained data image, and identify the location where cracks, peeling, etc. occur. By measuring the length and size of cracks, it is possible to analyze the measurement data of the temperature distribution. In addition, it is possible to evaluate the characteristics of the bonding layer 105 and detect deterioration or change of the bonding layer 105.
FIG. 11 is an explanatory diagram of the method for evaluating the bonding layer of the present invention and the operation of the bonding layer evaluation device.

Temperature information ΔT from a radiation thermometer or an infrared thermography camera 108 is input to the control circuit 804, and the chiller 103 is controlled based on the temperature information ΔT. Alternatively, the chiller 103 is controlled so that the temperature information ΔT is set to a predetermined value.

Further, the control circuit 804 controls the XYZ stage 110, moves the infrared thermographic camera 108, and positions the infrared thermographic camera 108 at a predetermined position on the junction layer 105. In addition, the temperature information ΔT is acquired by changing the position of the bonding layer 105 at predetermined intervals.

The control circuit 804 controls the constant current circuit 802a and the switch circuit 801a of the current power supply device 803a, and applies the constant current Ia to the temperature probe 116. The constant current Ia is applied between the terminal electrode 114a and the terminal electrode 114b.

The control circuit 804 controls the constant current circuit 802b and the switch circuit 801b of the current power supply device 803b, and applies the constant current Ib to the thin film heater 117. The constant current Ia is applied between the terminal electrode 115a and the terminal electrode 115b.

The thin film heater 117 generates heat due to the constant current Ib, and the generated heat is transferred to the SiC substrate 106 to heat the bonding layer 105. The exothermic temperature of the thin film heater 117 increases the resistance of the temperature probe 116.

A thin film heater 117 is formed or arranged around the temperature probe 116. The heater tip 109 is configured so that the temperature of the thin film heater 117 and the resistance value of the temperature probe 116 have a linear relationship.

A constant current Ia is supplied to the temperature probe 116. When the resistance value of the temperature probe 116 increases, the voltage between the terminal electrode 114a and the terminal electrode 114b of the temperature probe 116 also changes in proportion to the temperature. By measuring the voltage between the terminal electrode 114a and the terminal electrode 114b of the temperature probe 116 with the voltmeter 122a, the heat generation temperature of the thin film heater 117 (the temperature of the SiC substrate 106) can be obtained.

In this specification, the refrigerant flowing through the circulating water pipe 102 will be described as circulating water, but the refrigerant is not limited to water. Ethylene glycol, glycerin, chlorofluorocarbon, etc. may be used, or forced air cooling may be used.

The chiller 103 controls the liquid in the circulating water pipe 102, for example, in the range of water temperature -1 ° C. to + 100 ° C., and supplies the liquid to the heating / cooling plate 101 of the test unit. The heating / cooling plate 101 has a sufficiently large heat capacity.

In the embodiment of the present invention, the heating / cooling plate 101 is used, but the heating plate and the cooling plate may be separated and heated / cooled by using a heat source / cooling heat source other than the heating / cooling plate.

The current power supply device 803 outputs a constant current Ia or a constant current Ib to be supplied to the thin film heater 117 or the temperature probe 116. The current power supply device 803 supplies electric power (current, voltage) to the thin film heater 117 or the temperature probe 116 in synchronization with the control signal from the control circuit 804. Further, the current power supply device 803 can set the maximum voltage value to be output.

The switch circuit 801 turns on (supplies) and turns off (cuts off) the supply of the constant current output by the current power supply device 803. The switch circuit 801 is set or controlled to be on (output a constant current) or off (cut off a constant current) based on the signal from the control circuit 804. Normally, the switch circuit 801 is turned on before the start of the test and remains on during the test of the junction layer 105.

In FIG. 11, the current power supply device 803a and the current power supply device 803b each illustrate one current power supply device. The current power supply device 803 is not limited to one each. For example, two or more current power supply devices 803a may be possessed, and two or more current power supply devices 803b may be possessed. As the number of current power supply devices 803a and current power supply devices 803b increases, a wide variety of current Ia, current Ib waveforms, or voltage waveforms can be generated.
In the embodiment of the present invention, the current power supply device 803 will be described, but the current power supply device 803 is not limited to the one that outputs a constant current.

For example, a current power supply 803 that can set the maximum voltage is used. It is exemplified that the function is made to output a predetermined constant current at a set maximum voltage under a certain condition. Further, it is exemplified that the output terminal voltage is configured so that a predetermined maximum voltage can be set when a constant current is output.

Needless to say, in the present invention, the current power supply device 803 is not a device that outputs only a constant current, but may be a power supply device that can output or set a voltage and a current.

In the embodiment of FIG. 11, it will be described that the current power supply device 803 generates a constant current, but the constant current can also be realized by adjusting the applied voltage according to the state of the resistance of the thin film heater 117. Therefore, it goes without saying that the present invention is not limited to the current power supply device 803 that outputs a current, and may be configured by a voltage output power supply device. Needless to say, it may be composed of a power supply device having a current + voltage output.

The current power supply device 803b supplies the constant current Ib to the thin film heater 117. The thin film heater 117 generates heat corresponding to the applied constant current Ib. The heat generated is transferred to the SiC substrate 106 and heats the bonding layer 105. The SiC substrate 106 has high thermal conductivity. On the other hand, the copper plate 104 is held at a constant temperature by the heating / cooling plate 101.

The upper side of the bonding layer 105 is heated by the heat of the thin film heater 117 from the SiC substrate 106 side, and the lower side of the bonding layer 105 is maintained at a constant temperature by the copper plate 104. Therefore, the temperature information ΔT is generated from the upper side to the lower side of the joint layer 105. The radiation thermometer, the infrared thermometer, 108, and the like mainly measure the temperature on the upper side of the joint layer 105 and the temperature on the lower side of the joint layer 105. The temperature difference is acquired as temperature information ΔT.

A constant current Ib is applied to the thin film heater 117, and the thin film heater 117 generates heat. A constant current Ia is applied to the temperature probe 116. The constant current Ia is a relatively small current, and the temperature probe 116 hardly or does not generate heat at the constant current Ia. A constant current Ib is applied to the thin film heater 117, and the heat generated by the thin film heater 117 heats the temperature probe 116. The temperature probe 116 acquires in advance the relationship between the voltage between the terminals of the temperature probe 116 to be heated and the temperature.

When the temperature probe 116 is heated, the voltage between the terminals of the temperature probe 116 (measured by the voltmeter 122a) changes. The control circuit 804 acquires the voltage between the terminals and adjusts the constant current Ib to be passed through the thin film heater 117 so that the SiC substrate 106 has a predetermined temperature. The constant current Ib is 0.2 A or more and 2 A or less. The setting step of the constant current Ib is preferably 1 mA or less.
In the above embodiment, the constant current Ib is adjusted by measuring the voltage between the terminals of the temperature probe 116 to adjust the constant current Ib flowing through the thin film heater 117.

The constant current Ib can also be set and adjusted by measuring the temperature of the SiC substrate 106 or the temperature of the junction 105 with a radiation thermometer, an infrared thermometer, a camera 108, or the like. The temperature information ΔT is measured by the infrared thermographic camera 108, and the constant current Ib to be passed through the thin film heater 117 is adjusted depending on whether the temperature information ΔT is a predetermined value or within a predetermined range.

It is possible to adjust the constant current Ib flowing through the thin film heater 117 by taking into account both the temperature information ΔT obtained by the infrared thermographic camera 108 or the like and the voltage between the terminals of the temperature probe 116 (measured by the voltmeter 122a). Needless to say.
The switch circuit 801b may be turned on and off, and the constant current Ib flowing through the thin film heater 117 may be turned on and off to adjust or set the heat generation of the thin film heater 117.

The heater chip 109 of the present invention exemplifies not only the configuration shown in FIG. 2 but also a wide variety of configurations. As an example, the configuration or structure of FIG. 18 is illustrated. The substrate 106 of the heater chip 109 is made of SiC, AlN, or the like. Thin film heaters 117 are formed or arranged spirally or concentrically on the surface of the substrate 106 of FIG. Similarly, the temperature probe 116 is also formed or arranged in a spiral or concentric manner.

By forming or forming the thin film heater 117 in a spiral shape or a concentric shape, the SiC substrate 106 and the like can be uniformly heated. A constant current Ib is applied to the terminal electrode 115a and the terminal electrode 115b of the thin film heater 117.

A constant current Ib is applied to the terminal electrode 115a and the terminal electrode 115b of the thin film heater 117. A constant current Ia is applied to the terminal electrode 114a and the terminal electrode 114b of the temperature probe 116.

Examples of the thin film heater 117 include a zigzag shape, a quadrangular shape, and a radial shape. Needless to say, a plurality of thin film heaters 117 may be formed or arranged on the heater chip 109. The above items are the same for the temperature probe 116.

In FIG. 11, one SiC substrate 106 and one bonding layer 105 are arranged on one copper plate 104 as in the embodiment. However, the present invention is not limited to this.

FIG. 12 shows an example in which one copper plate 104 is arranged on the heating / cooling plate 101, and a plurality of bonding layers 105 are formed on the one copper plate 104. Each bonding layer 105 is sandwiched between the heater chips 109.

The bonding layer 105a is sandwiched between the heater tip 109a and the copper plate 104. The bonding layer 105b is sandwiched between the heater tip 109b and the copper plate 104. The bonding layer 105c is sandwiched between the heater tip 109c and the copper plate 104. The bonding layer 105d is sandwiched between the heater tip 109d and the copper plate 104. The bonding layer 105e is sandwiched between the heater tip 109e and the copper plate 104.

The temperatures at points A and B of the respective bonding layers 105 are measured by an infrared thermographic camera 108 or the like. An infrared thermographic camera 108 is arranged on the XYZ stage 110, and the infrared thermographic camera 108 moves on the XYZ stage 110 to acquire temperature information ΔT at points A and B of each junction layer 105.

By making the material or composition of each bonding layer 105 (bonding layer 105a to 105e) different from each other, information (characteristics, life, etc.) of various bonding layers 105 can be obtained at the same time.

Further, by making the temperature of the heater tip 109 of each bonding layer 105 (bonding layer 105a to 105e) different, various information (characteristics, life) of the bonding layer 105 is obtained with respect to the temperature at which the bonding layer 105 is heated. Etc.) can be obtained at the same time.

Although the temperature of the bonding layer 105 is measured by the infrared thermographty camera 108, the temperature is not limited to the temperature. Needless to say, any data may be used as long as it is a value or information that is correlated or proportional to the temperature.

FIG. 13 is an explanatory diagram of the bonding layer evaluation method and the bonding layer evaluation device of the present invention. A gold-plated film 112c is formed between the Ni-P film 111d and the bonding layer 105, and a gold-plated film 112a is formed between the Ni-P film 111a and the bonding layer 105. The gold plating film disappears due to the diffusion of gold into the bonding layer 105 due to the formation of the bonding layer 105, and is not shown.

Further, in FIGS. 1, 10, 13, 14, 14, 15, 16, 16, 17 and the like, the In film 151 is shown for easy understanding, but in reality, the SEM of FIG. 21 is shown. As shown in the photograph, In is diffused, and an alloy film 152 composed _{of a P-rich film and a (Ni, Cu) 3} Sn ₄ film is formed between the bonding layer (solder layer) 105 and the Ni-P film 111. , In film 151 does not exist. Moreover, the alloy layer 153 is formed. The In film 152 may be replaced with the alloy film 152.

As shown in FIG. 13, when a constant current Ib is applied to the thin film heater 117, the thin film heater 117 generates heat, and the generated heat is transferred to the SiC substrate 106. Diffuse portion 901 is generated in the joint layer 105 by the generated heat. In the diffusion unit 901, the material and composition constituting the bonding layer 105 move or change in characteristics due to heat. In addition, cracks occur, voids expand, flux and the like flow out. Due to these changes or occurrences, the temperature state of the bonding layer 105 and the temperature information ΔT change.

Depending on the structure or material of the bonding layer 105, a difference in temperature information ΔT or temperature information ΔT peculiar to the initial state (a state in which the bonding layer 105 is heated by the thin film heater 117 and reaches a predetermined temperature) occurs. The temperature information ΔT in the initial state can be used to quantitatively evaluate the bonding layer 105 or grasp the characteristics of the bonding layer 105.

As described above, the present invention can quantitatively evaluate the bonding layer 105 or grasp the characteristics of the bonding layer 105 based on the temperature information ΔT in the initial state. Further, the bonding layer 105 is changed by heating or heating the bonding layer 105. By acquiring the temperature information ΔT, the change state can be quantitatively measured, and the life or characteristic deterioration state or the change with time can be quantitatively grasped.

The upper side of the bonding layer 105 is heated by the thin film heater 117. The copper plate 104 is maintained at a predetermined temperature by the heating / cooling plate 101. Therefore, the temperature distribution of the joint layer 105 is generated from the upper side to the lower side, and the temperature information ΔT of the joint layer 105 changes from the upper side to the lower side.

When the bonding layer 105 is uniformly formed, heat transfer becomes easy, the heat distribution becomes uniform, and the temperature information ΔT also becomes uniform. When cracks or voids are generated in the joint layer 105, heat transfer becomes small at the cracks or void portions. Therefore, the heat distribution becomes non-uniform, and the temperature information ΔT also differs in each part of the junction layer 105.

As shown in FIG. 14, when the thin film heater 117 generates heat, a temperature distribution as shown by a dotted line is generated in the bonding layer 105. The temperature distribution shows the composition, structure, and material of the bonding layer 105.

As shown in FIG. 14, the temperature at points A and B of the junction layer 105 is measured by the infrared thermographty camera 108. The temperature information ΔT is obtained from the temperatures (temperature information ΔT) at points A and B. The state of the bonding layer 105 can be quantitatively grasped from the temperature information ΔT.

In the joint layer 105, the joint layer 105 can be quantitatively evaluated by acquiring the temperature information ΔT at a plurality of locations with the infrared thermographic camera 108 and obtaining the temperature information ΔT between the plurality of points of the joint layer 105. can. Further, by heating or overheating the bonding layer 105 and comparing the temperature information ΔT after the elapse of a predetermined time with the temperature information ΔT in the initial state, the life or deterioration of the bonding layer 105 can be quantitatively measured.

In FIG. 14, it is assumed that the radiation thermometer and the infrared thermography camera 108 measure the temperature information ΔT at points A and B. In order to measure or grasp the characteristics, structure, life, etc. of the bonding layer 105 in detail, temperature information ΔT is acquired at three or more points as shown in FIG.

In FIG. 15, nine measurement points are measured at equal intervals (d / 2). d is approximately the film thickness of the bonding layer 105. As shown in FIG. 15, the temperature information ΔT is acquired in a matrix of the bonding layer 105. The temperature information ΔT between each point is obtained from the acquired temperature information ΔT of each point.
The temperature information ΔT correlates with the failure rate. FIG. 19 is an explanatory diagram schematically showing the relationship between the temperature information ΔT and the failure rate.

When the temperature information ΔT is small, the joint layer 105 is uniform, and voids, cracks, etc. are not generated or are few. When the temperature information ΔT is large, when the temperature information ΔT is non-uniform, etc., non-uniform material mixing, voids, cracks, etc. are often generated in the joint layer 105.

As shown in FIG. 19, when the temperature information ΔT is ΔT1 or less, the failure rate is up to F1 and is constant or less. However, when the temperature information ΔT is ΔT1 or more, the failure rate sharply increases when ΔT1 is exceeded.
Assuming that the joint portion 105 needs to be kept within a predetermined failure rate F2 or less, the temperature information ΔT needs to be ΔT2 or less.

By producing each bonding layer 105 and acquiring the temperature information ΔT with the infrared thermographic camera 108, the bonding layer 105 can be quantitatively evaluated and the failure rate can be grasped. Further, by heating the bonding layer 105 with the thin film heater 117, the life and deterioration of the bonding layer 105 can be quantitatively measured or grasped, and the failure rate can be predicted.

The graph of FIG. 19 is created by measuring or acquiring the temperature information ΔT of the sample of the produced joint 105 and the failure rate. By creating a graph, the failure rate can be quantitatively predicted by acquiring the temperature information ΔT of the newly produced joint portion 105 with an infrared thermographic camera 108 or the like.

FIG. 16 shows a state in which a state in which the bonding layer 105 is heated by the thin film heater 117 is thermally simulated. The thin film heater 117 creates a temperature distribution in the junction layer 105.

The thermal simulation includes the film thickness / arrangement position of the Ni-P film 111 (In film 151), the film thickness / arrangement position of the thin film heater 117, the shape / arrangement position of the heater chip 109, the current applied to the heater chip 109, and the temperature probe 116. It can be realized by setting at least one or more information among the information such as the shape / arrangement position of the above, the material or composition of the bonding layer 105, and the film thickness.

The temperature information ΔT of points A, C, and B acquired by the infrared thermographty camera 108 can also be obtained by thermal simulation. It is possible to correlate the value simulated by heat with the value measured by the infrared thermographty camera 108.

As illustrated in FIG. 11, the infrared thermographty camera 108 acquires the temperature information ΔT of the end face of the junction layer 105. Using the acquired temperature information ΔT, the constant current Ib applied to the thin film heater 117 is variable or set.

It is preferable that the measurement of the infrared thermographic camera 108 and the changing constant current Ib are synchronized. The infrared thermographic camera 108 is measured in synchronization with the timing at which the constant current Ib is changed. It is also preferable to synchronize the measurement of the constant current Ib to be changed and the terminal voltage of the temperature probe 116.

As shown in FIG. 17, the setting of the constant current Ib applied to the thin film heater 117 is the temperature information ΔT at the central portion D of the bonding layer 105, which is a position (depth direction) separated by t distance from the end face. Is obtained, and it is preferable that the constant current Ib can be set by using the temperature information ΔT at the central portion D point.

The temperature information ΔT at the central point D cannot be measured directly. In the present invention, as shown in FIG. 16, a thermal simulation is performed, and as shown in FIG. 17, the temperatures at points A, B, and C are measured by thermal simulation in the lower layer of point D, which is t distance away from the end face b1. Information ΔT is obtained.

By carrying out the thermal simulation, for example, FIG. 17 (b1) shows the temperature distribution state by the thermal simulation on the b1 line, FIG. 17 (b2) shows the temperature distribution state by the thermal simulation on the b2 line, and FIG. 17 (b3) shows the temperature distribution state. It is obtained as a temperature distribution state by thermal simulation on the b3 line. Further, the temperature distribution state of the b2 line and the b3 line may be obtained by thermal simulation by using the temperature information ΔT obtained by the infrared thermography camera for the temperature distribution information of the b1 line. In this case, since the thermal simulation is based on the measured value, the temperature distribution state of the b1 line and the b3 line can be obtained more accurately.

In the present invention, the temperature information ΔT at the central portion or an arbitrary portion of the bonding layer 105 is obtained by thermal simulation, and the constant current Ib of the thin film heater 117 is controlled based on the obtained temperature information ΔT. Therefore, the temperature control can be performed with high accuracy.

The thin film heater 117 and the temperature probe 116 are formed on the upper surface of the base substrate 106, but the present invention is not limited to this. For example, the base substrate 106 may be formed on a surface in contact with the bonding layer 105. For example, at least one of the thin film heater 117 and the temperature probe 116 may be formed between the Ni-P film 111d and the base substrate 106.

In the case of this configuration, a thin film heater 117 or the like is formed on the lower surface of the base substrate 106, _{an insulating film such as SiO 2} is formed on the thin film heater 117 or the like, and a Ni-P film 111d is formed on the insulating film such as SiO 2.
It is assumed that a Ni-P film 111a and an In film 151b are formed on the copper plate 104, and a Ni-P film 111d and an In film 151a are formed on the base substrate 106.

Needless to say, an appropriate material may be selected for the joint layer 105 in a timely manner according to the type. For example, when the bonding layer 105 is solder, nickel (Ni), tin, lead, and the like are exemplified. When the bonding layer 105 is an organic substance such as an epoxy resin, a primer for an epoxy resin is exemplified. In this case, the epoxy resin primer functions not as an electrode but as a contact layer (contact layer).

In the present specification and drawings, the base substrate 106 will be described as a substrate, but the present invention is not limited thereto. The base substrate 106 may be a base film 106 as a film. At least, any configuration may be used as long as the member has an exothermic material such as a thin film heater 117 and an intermediary layer 111d for joining.

Although the copper plate 104 will be described in the present specification and drawings, the copper plate 104 is not limited to the plate. The plate may be a film or a sheet. Needless to say, it may be a thick individual member. The copper plate 104 may have any configuration as long as it has an intermediary layer 111a for joining on one surface.

The thin film heater 117 and the temperature probe 116 are not limited to thin films. Needless to say, it may be a structure made of a wire rod or the like and having a certain thickness. Examples of the thin film heater 117 include a planar heating element heater, a ceramic heater, a film heater, a planar illuminant carbon, and a heater made of a Perche element. The heater may be any heating means. Needless to say, the temperature probe 116 may be a thermocouple, a radiation thermometer, or the like.

In the present specification and the like, the heating / cooling plate 101 is arranged on the back surface of the copper plate 104 to maintain the copper plate 104 at a predetermined temperature, but the present invention is not limited to this. For example, the Ni-P film 111a and the In film 151b are directly formed on the surface of the heating / cooling plate 101, and the bonding layer 105 is arranged between the Ni-P film 111a and the Ni-P film 111d and the In film 151b of the SiC substrate 106. You may.

As a function of the copper plate 104, one is adopted to bring one side of the bonding layer 105 to a uniform predetermined temperature. Therefore, the copper plate 104 is not limited to metal. For example, a plate or sheet having high heat transfer properties such as AlN, SiC, and ceramic can be adopted. The plate 104 is a member having an area at least equal to or larger than the contact area with the bonding layer 105 and having a uniform thermal conductivity in the area.

The polyimide sheet 107 is not limited to the sheet. A plate-shaped resin member may be attached to the joint layer 105 with an adhesive or the like. Further, an acrylic resin, an epoxy resin or the like may be applied. Further, the present invention is not limited to polyimide, and a precursor polyamide or the like may be adopted.

An infrared thermography camera 108 has been exemplified as a means for measuring or acquiring a temperature. However, any one that can measure the temperature of the bonding layer 105 and its vicinity in a non-contact manner can be adopted. For example, a radiation thermometer is illustrated.
As described above, the bonding layer evaluation method and the bonding layer evaluation device of the present invention can quantitatively evaluate the evaluation, composition, life, etc. of the bonding layer.

Although the present specification has been specifically described based on the embodiments, the present invention is not limited thereto, and various modifications can be made without departing from the gist thereof.
It goes without saying that the matters or contents described in the present specification and the drawings can be combined with each other.

It is possible to easily detect the deterioration of the bonding layer between the electrodes in a non-destructive manner based on the measurement data of the temperature distribution. In addition, it is possible to easily evaluate the life of the solder joint layer or the like. It can also be used for reliability evaluation of deterioration detection and life evaluation.

101 Heating / cooling plate 102 Circulating water pipe 103 Chiller 104 Copper plate 105 Solder layer (bonding layer)
106 SiC substrate 107 Polyimide sheet (polyamide)
108 Infrared Thermografty Camera 109 Heater Tip 110 XYZ Stage 111 Ni-P Film (Plating Film)
112 Gold-plated film 114 Temperature probe terminal electrode (gold-plated film)
115 Thin film heater terminal electrode (gold plated film)
116 Temperature probe (Ni-P film)
117 Thin film heater (Ni-P film)
118 Thermal paste 119 Roughened surface 120 Masking tape 121 Lead wire 122 Voltmeter 123 Solder 124 Electromigration (EM) terminal electrode (gold plated film)
125 Sintered Ag paste filling layer 126 High temperature solder 127 Wiring 128 Current 129 Copper plate (heat dissipation plate)
130 Cross mark 131 Through hole (TH)
132 Current application path 134 Sintered Ag paste filling part 151 In film 152 Alloy film 153 In diffusion prevention film 501 Mask (including alkali-soluble type acrylic polymer)
502 Laser light (femtosecond laser light)
503 Recess 504 Sn-Pd catalyst 801 Switch circuit 802 Constant current circuit 803 Current power supply 804 Control circuit 901 Diffusion part

Claims (10)

The first board and
The second board and
The first member and
With the heating means formed or arranged on the first surface of the first substrate,
A current path formed or arranged on the first surface of the first substrate,
A current supply means for supplying an electric current to the heating means and
A connection layer arranged between the second substrate and the second surface of the first substrate,
A temperature measuring means for acquiring the temperature of the bonding layer from infrared rays radiated from the bonding layer is provided.
A bonding layer evaluation device characterized in that a layer containing indium is formed in a layer facing the bonding layer. The bonding layer evaluation device according to claim 1, wherein the first substrate is formed of silicon carbide. The bonding layer according to claim 1, wherein a position on the first surface where the heating means is formed or arranged is roughened by irradiating a femtosecond laser beam or a picosecond laser beam. Evaluation device. The bonding layer evaluation device according to claim 1, further comprising a heating or cooling means for heating the second substrate to a predetermined temperature. The bonding layer evaluation device according to claim 1, wherein at least one of the heating means and the current path is a layer made of Ni-P. It has a first substrate, a second substrate, a first member, and a resin member.
A bonding layer for joining the second substrate and the first member is formed.
Polish the joint surface that the joint layer contacts,
The resin member is arranged so as to be in close contact with the joint surface.
A method for evaluating a bonding layer, which comprises heating the first substrate, maintaining the second substrate at a predetermined temperature, and acquiring temperature information ΔT at a predetermined position on the bonding surface in a non-contact manner. .. A heater made of a thin film is formed on the first substrate.
By applying an electric current to the heater made of the thin film, the heater made of the thin film is heated.
The method for evaluating a bonding layer according to claim 6, wherein the bonding layer is heated by the heat generation. The method for evaluating a bonding layer according to claim 6, wherein the second substrate is maintained at a predetermined temperature. The method for evaluating a bonding layer according to claim 6, wherein a wiring made of Ni-P is formed on the first substrate. For the temperature information ΔT at the predetermined position of the joint surface, a plurality of points are acquired, and the temperature information ΔT is obtained.
The method for evaluating a bonding layer according to claim 6, wherein the difference in temperature information ΔT at a plurality of points is obtained.

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