JP2021122896A - Elastic membrane - Google Patents

Elastic membrane Download PDF

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JP2021122896A
JP2021122896A JP2020018163A JP2020018163A JP2021122896A JP 2021122896 A JP2021122896 A JP 2021122896A JP 2020018163 A JP2020018163 A JP 2020018163A JP 2020018163 A JP2020018163 A JP 2020018163A JP 2021122896 A JP2021122896 A JP 2021122896A
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rubber layer
layer
elastic membrane
polishing head
elastic film
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JP7061144B2 (en
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伸幸 林
Nobuyuki Hayashi
伸幸 林
康平 長谷
Kohei Hase
康平 長谷
昭洋 増根
Akihiro Masune
昭洋 増根
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Mitsubishi Cable Industries Ltd
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Abstract

To make contact pressure of a semiconductor wafer to an abrasive pad uniform, in an elastic membrane which forms a single closed space between the elastic membrane and an abrasive head.SOLUTION: A wafer holding elastic membrane 10 is fitted to an abrasive head 21 of a CMP device 20 and forms a single closed space 23 between the elastic membrane and the abrasive head 21. The elastic membrane includes: an inner rubber layer 111 made of a rubber and provided on an abrasive head-fitting side; an outer rubber layer 112 made of a rubber and provided on a wafer-holding side; and an intermediate rigid layer 113 provided between the inner rubber layer 111 and the outer rubber layer 112 and formed of a material that has a rigidity higher than those of the inner rubber layer 111 and the outer rubber layer 112.SELECTED DRAWING: Figure 2

Description

本発明は、CMP装置の研磨ヘッドに取り付けられるウエハ保持用の弾性膜に関する。 The present invention relates to an elastic film for holding a wafer attached to a polishing head of a CMP apparatus.

半導体デバイスの製造プロセスで用いられるCMP装置では、通常、研磨ヘッドにウエハ保持用の弾性膜が取り付けられる。この弾性膜は、研磨ヘッドとの間に形成される密閉空間の圧力調整により半導体ウエハを吸着して保持する。そして、弾性膜に保持された半導体ウエハは、研磨パッドに圧接されて研磨される。このとき、半導体ウエハの研磨パッドへの圧接力が不均一であると、半導体ウエハに研磨不足の部分や過研磨の部分が生じてしまうこととなる。そこで、研磨ヘッドと弾性膜との間に複数の密閉空間を区画形成し、各密閉空間毎に圧力調整を行うことにより、半導体ウエハの研磨パッドへの圧接力の均一化を図ることが行われている。例えば、特許文献1には、研磨ヘッドとの間に複数の密閉空間を区画形成した弾性膜において、隣接する密閉空間に跨がるように剛性の高いダイヤフラムを埋設したものが開示されている。 In a CMP apparatus used in a semiconductor device manufacturing process, an elastic film for holding a wafer is usually attached to a polishing head. This elastic film attracts and holds the semiconductor wafer by adjusting the pressure in the closed space formed between the elastic film and the polishing head. Then, the semiconductor wafer held by the elastic film is pressed against the polishing pad and polished. At this time, if the pressure contact force of the semiconductor wafer with the polishing pad is not uniform, a portion of the semiconductor wafer that is under-polished or a portion that is over-polished will occur. Therefore, by forming a plurality of closed spaces between the polishing head and the elastic film and adjusting the pressure for each closed space, the pressure contact force of the semiconductor wafer with the polishing pad is made uniform. ing. For example, Patent Document 1 discloses an elastic film in which a plurality of closed spaces are partitioned between the polishing head and an elastic membrane in which a diaphragm having high rigidity is embedded so as to straddle the adjacent closed spaces.

特許第5236705号公報Japanese Patent No. 5236705

研磨ヘッドと弾性膜との間に複数の密閉空間を区画形成する構成では、研磨ヘッド及び弾性膜の構造も、半導体ウエハの研磨パッドへの圧接力を均一化するための各密閉空間毎の圧力調整も複雑となる。また、消耗品である弾性膜の研磨ヘッドへの取り付け時におけるゴミの混入や取付ミスが危惧されるのに加え、その取付に多大の作業工数がかかる。 In the configuration in which a plurality of closed spaces are partitioned between the polishing head and the elastic film, the structure of the polishing head and the elastic film is also the pressure for each closed space for equalizing the pressure contact force of the semiconductor wafer with the polishing pad. Adjustment is also complicated. In addition, there is a concern that dust may be mixed in when the elastic film, which is a consumable item, is attached to the polishing head, or an attachment error may occur, and a large amount of man-hours are required for the attachment.

本発明の課題は、研磨ヘッドとの間に単一の密閉空間を形成する弾性膜において、半導体ウエハの研磨パッドへの圧接力を均一化することである。 An object of the present invention is to equalize the pressure contact force of the semiconductor wafer with the polishing pad in the elastic film forming a single closed space with the polishing head.

本発明は、CMP装置の研磨ヘッドに取り付けられて前記研磨ヘッドとの間に単一の密閉空間を形成するウエハ保持用の弾性膜であって、研磨ヘッド取付側に設けられたゴム製の内側ゴム層と、ウエハ保持側に設けられたゴム製の外側ゴム層と、前記内側ゴム層と前記外側ゴム層との間に設けられ前記内側ゴム層及び前記外側ゴム層よりも剛性の高い材料で形成された中間剛体層とを備える。 The present invention is an elastic film for holding a wafer that is attached to the polishing head of a CMP device and forms a single closed space between the polishing head and the rubber inside, which is provided on the polishing head attachment side. A rubber layer, a rubber outer rubber layer provided on the wafer holding side, and a material provided between the inner rubber layer and the outer rubber layer and having higher elasticity than the inner rubber layer and the outer rubber layer. It includes a formed intermediate rigid layer.

本発明によれば、内側ゴム層と外側ゴム層との間に、それらよりも剛性の高い中間剛体層が設けられていることにより、研磨ヘッドとの間に単一の密閉空間を形成する弾性膜において、半導体ウエハの研磨パッドへの圧接力を均一化することができる。 According to the present invention, an intermediate rigid body layer having a higher rigidity than those is provided between the inner rubber layer and the outer rubber layer, so that the elasticity forms a single closed space between the inner rubber layer and the outer rubber layer. In the film, the pressure contact force of the semiconductor wafer with the polishing pad can be made uniform.

実施形態に係る弾性膜の斜視図である。It is a perspective view of the elastic membrane which concerns on embodiment. 実施形態に係る弾性膜の断面斜視図である。It is sectional drawing of the elastic membrane which concerns on embodiment. 実施形態に係る弾性膜がCMP装置の研磨ヘッドに取り付けられた状態を示す縦断面図である。It is a vertical cross-sectional view which shows the state which the elastic film which concerns on embodiment is attached to the polishing head of a CMP apparatus. 実施形態に係る弾性膜の膜本体の外周部を示す縦断面図である。It is a vertical cross-sectional view which shows the outer peripheral part of the membrane body of the elastic membrane which concerns on embodiment. 実施形態に係る弾性膜の変形例の膜本体の外周部を示す縦断面図である。It is a vertical cross-sectional view which shows the outer peripheral part of the membrane body of the modification of the elastic membrane which concerns on embodiment.

以下、実施形態について詳細に説明する。 Hereinafter, embodiments will be described in detail.

図1A及びBは、実施形態に係る弾性膜10を示す。実施形態に係る弾性膜10は、図2に示すように、CMP装置20の研磨ヘッド21に取り付けられて研磨パッド22で研磨する半導体ウエハWのウエハ保持用途に用いられるものである。 1A and 1B show the elastic membrane 10 according to the embodiment. As shown in FIG. 2, the elastic film 10 according to the embodiment is used for a wafer holding application of a semiconductor wafer W which is attached to a polishing head 21 of a CMP apparatus 20 and is polished by a polishing pad 22.

実施形態に係る弾性膜10は、円盤状の膜本体11と、その周縁の研磨ヘッド取付側に縦壁状に一体に設けられた筒状部12と、その上端に連続して内側に延びるように一体に設けられた環状部13とを有する浅底の円形皿状に形成されている。膜本体11、筒状部12、及び環状部13の厚さは、例えば0.3mm以上6mm以下である。 The elastic film 10 according to the embodiment is formed by a disk-shaped film body 11, a tubular portion 12 integrally provided on the polishing head mounting side of the peripheral edge thereof in a vertical wall shape, and extending inward continuously at the upper end thereof. It is formed in a shallow-bottomed circular dish shape having an annular portion 13 integrally provided on the surface. The thickness of the membrane body 11, the tubular portion 12, and the annular portion 13 is, for example, 0.3 mm or more and 6 mm or less.

実施形態に係る弾性膜10は、筒状部12及び環状部13が、それらの全周において、研磨ヘッド21に係合するように取り付けられ、且つ膜本体11が、円形の研磨パッド22の偏心位置に対向して配置されるとともに、研磨ヘッド21との間に単一の密閉空間23を形成する。そして、被研磨物である半導体ウエハWは、一方の面が研磨ヘッド21に取り付けられた弾性膜10及び他方の面が研磨パッド22にそれぞれ当接するように配置され、密閉空間23が負圧にされることにより弾性膜10に吸着されて保持され、研磨ヘッド21及び研磨パッド22がそれぞれ軸回転することにより研磨パッド22上を摺動して研磨される。 In the elastic film 10 according to the embodiment, the tubular portion 12 and the annular portion 13 are attached so as to engage with the polishing head 21 on the entire circumference thereof, and the film body 11 is eccentric of the circular polishing pad 22. It is arranged so as to face the position and forms a single closed space 23 with the polishing head 21. The semiconductor wafer W to be polished is arranged so that one surface is in contact with the elastic film 10 attached to the polishing head 21 and the other surface is in contact with the polishing pad 22, and the closed space 23 is subjected to negative pressure. By being attracted to and held by the elastic film 10, the polishing head 21 and the polishing pad 22 slide on the polishing pad 22 and are polished by rotating their axes.

実施形態に係る弾性膜10の膜本体11は、研磨ヘッド取付側に設けられたゴム製の内側ゴム層111と、ウエハ保持側に設けられたゴム製の外側ゴム層112と、それらの内側ゴム層111と外側ゴム層112との間に設けられた中間剛体層113とを備える3層積層構造を有する。内側ゴム層111の研磨ヘッド取付側に露出した表面及び外側ゴム層112のウエハ保持側に露出した表面は、いずれも平坦面である。 The film body 11 of the elastic film 10 according to the embodiment has a rubber inner rubber layer 111 provided on the polishing head mounting side, a rubber outer rubber layer 112 provided on the wafer holding side, and their inner rubbers. It has a three-layer laminated structure including an intermediate rigid body layer 113 provided between the layer 111 and the outer rubber layer 112. The surface of the inner rubber layer 111 exposed to the polishing head mounting side and the surface of the outer rubber layer 112 exposed to the wafer holding side are both flat surfaces.

内側ゴム層111及び外側ゴム層112は、架橋ゴムで形成されている。内側ゴム層111及び外側ゴム層112を形成する架橋ゴムのゴム成分としては、例えば、シリコーンゴム、クロロプレンゴム、EPDM、NBR、天然ゴム、フッ素ゴム等が挙げられる。内側ゴム層111及び外側ゴム層112は、膜本体11の膜構造の安定性の観点から、少なくともそれらを形成する架橋ゴムのゴム成分が同一であることが好ましく、同一の架橋ゴムで形成されていることがより好ましい。 The inner rubber layer 111 and the outer rubber layer 112 are formed of crosslinked rubber. Examples of the rubber component of the crosslinked rubber forming the inner rubber layer 111 and the outer rubber layer 112 include silicone rubber, chloroprene rubber, EPDM, NBR, natural rubber, and fluororubber. From the viewpoint of the stability of the film structure of the film body 11, the inner rubber layer 111 and the outer rubber layer 112 preferably have at least the same rubber component of the crosslinked rubber forming them, and are formed of the same crosslinked rubber. It is more preferable to have.

内側ゴム層111及び外側ゴム層112を形成する架橋ゴムのタイプAデュロメータで測定される硬さは、好ましくは10以上90以下、より好ましくは30以上75以下である。この架橋ゴムの硬さは、JIS K6253−3:2012に基づいて測定されるものである。 The hardness measured by the type A durometer of the crosslinked rubber forming the inner rubber layer 111 and the outer rubber layer 112 is preferably 10 or more and 90 or less, and more preferably 30 or more and 75 or less. The hardness of this crosslinked rubber is measured based on JIS K6253-3: 2012.

内側ゴム層111及び外側ゴム層112の厚さは、例えば0.1mm以上2mm以下である。内側ゴム層111及び外側ゴム層112の厚さは、異なっていてもよいが、膜本体11の膜構造の安定性の観点から、同一であることが好ましい。 The thickness of the inner rubber layer 111 and the outer rubber layer 112 is, for example, 0.1 mm or more and 2 mm or less. The thicknesses of the inner rubber layer 111 and the outer rubber layer 112 may be different, but are preferably the same from the viewpoint of the stability of the film structure of the film body 11.

中間剛体層113は、内側ゴム層111及び外側ゴム層112よりも剛性の高い材料で形成された円盤で構成されている。中間剛体層113を形成する材料としては、樹脂及び金属が挙げられる。樹脂としては、例えば、ポリエーテルエーテルケトン樹脂(PEEK)、ポリエチレンテレフタレート樹脂(PET)などの熱可塑性樹脂;フェノール樹脂、エポキシ樹脂などの熱硬化性樹脂等が挙げられる。金属としては、例えば、SUS304などのステンレス等が挙げられる。中間剛体層113は、樹脂層と金属層との複合材で構成されていてもよい。 The intermediate rigid body layer 113 is composed of a disk made of a material having a higher rigidity than the inner rubber layer 111 and the outer rubber layer 112. Examples of the material forming the intermediate rigid body layer 113 include a resin and a metal. Examples of the resin include thermoplastic resins such as polyetheretherketone resin (PEEK) and polyethylene terephthalate resin (PET); thermosetting resins such as phenol resin and epoxy resin. Examples of the metal include stainless steel such as SUS304. The intermediate rigid body layer 113 may be composed of a composite material of a resin layer and a metal layer.

中間剛体層113が樹脂で形成されている場合、そのタイプDデュロメータで測定される硬さは、好ましくは10以上95以下、より好ましくは50以上95以下である。この架橋ゴムの硬さは、JIS K7215−1986に基づいて測定されるものである。 When the intermediate rigid body layer 113 is made of resin, the hardness measured by the type D durometer is preferably 10 or more and 95 or less, and more preferably 50 or more and 95 or less. The hardness of this crosslinked rubber is measured based on JIS K7215-1986.

中間剛体層113の厚さは、例えば0.02mm以上2mm以下である。中間剛体層113の厚さは、内側ゴム層111及び外側ゴム層112の厚さと、同一であっても、異なっていても、どちらでもよい。 The thickness of the intermediate rigid body layer 113 is, for example, 0.02 mm or more and 2 mm or less. The thickness of the intermediate rigid body layer 113 may be the same as or different from the thickness of the inner rubber layer 111 and the outer rubber layer 112.

膜本体11の膜構造の安定性の観点からは、中間剛体層113の外径は、膜本体11の外径よりもやや小さく、したがって、中間剛体層113の外側において、内側ゴム層111と外側ゴム層112とが結合することにより、中間剛体層113が内側ゴム層111及び外側ゴム層112間に埋設されていることが好ましい。この場合、図3に示すように、中間剛体層113の外側の内側ゴム層111と外側ゴム層112との結合部分の幅a及び弾性膜10の膜本体11の厚さをtとしたとき、膜本体11の膜構造の安定性の観点からは、0.01t≦aであることが好ましい。一方、後述する半導体ウエハWの研磨パッド22への圧接力を均一化する観点からは、a≦10tであることが好ましく、a≦5tであることがより好ましく、a≦3tであることが更に好ましい。 From the viewpoint of the stability of the film structure of the film body 11, the outer diameter of the intermediate rigid body layer 113 is slightly smaller than the outer diameter of the film body 11, and therefore, on the outside of the intermediate rigid body layer 113, the inner rubber layer 111 and the outer diameter are formed. It is preferable that the intermediate rigid body layer 113 is embedded between the inner rubber layer 111 and the outer rubber layer 112 by being bonded to the rubber layer 112. In this case, as shown in FIG. 3, when the width a of the joint portion between the outer inner rubber layer 111 and the outer rubber layer 112 of the intermediate rigid body layer 113 and the thickness of the film body 11 of the elastic film 10 are t. From the viewpoint of the stability of the film structure of the film body 11, 0.01 t ≦ a is preferable. On the other hand, from the viewpoint of equalizing the pressure contact force of the semiconductor wafer W with the polishing pad 22, which will be described later, a ≦ 10t is preferable, a ≦ 5t is more preferable, and a ≦ 3t is further preferable. preferable.

半導体ウエハWの研磨パッド22への圧接力を均一化する観点からは、膜本体11の全領域に中間剛体層113が設けられ、図4に示すように、膜本体11の側面に中間剛体層113が露出していていることが好ましい。 From the viewpoint of equalizing the pressure contact force of the semiconductor wafer W with the polishing pad 22, the intermediate rigid body layer 113 is provided in the entire region of the film body 11, and as shown in FIG. 4, the intermediate rigid body layer is provided on the side surface of the film body 11. It is preferable that 113 is exposed.

なお、中間剛体層113と、内側ゴム層111及び/又は外側ゴム層112との間に接着剤層を設け、それらの間の密着性を化学的に高めてもよい。また、中間剛体層113の表面粗さを高めて、内側ゴム層111及び/又は外側ゴム層112との間の密着性を物理的に高めてもよい。 An adhesive layer may be provided between the intermediate rigid body layer 113 and the inner rubber layer 111 and / or the outer rubber layer 112 to chemically enhance the adhesion between them. Further, the surface roughness of the intermediate rigid body layer 113 may be increased to physically increase the adhesion between the inner rubber layer 111 and / or the outer rubber layer 112.

筒状部12及び環状部13は、膜本体11の内側ゴム層111及び/又は外側ゴム層112を形成するのと同一の架橋ゴムで形成されていることが好ましい。 The tubular portion 12 and the annular portion 13 are preferably formed of the same crosslinked rubber that forms the inner rubber layer 111 and / or the outer rubber layer 112 of the film body 11.

実施形態に係る弾性膜10は、例えば、プレス金型に、内側ゴム層111を形成するための未架橋ゴムシート、円盤状の中間剛体層113、及び外側ゴム層112を形成するための未架橋ゴムシートを積層して仕込み、これをプレス成形することにより製造することができる。 The elastic film 10 according to the embodiment is, for example, an uncrosslinked rubber sheet for forming an inner rubber layer 111, a disk-shaped intermediate rigid body layer 113, and an uncrosslinked rubber layer 112 for forming an outer rubber layer 112 on a press die. It can be manufactured by laminating rubber sheets, preparing them, and press-molding them.

以上の構成の実施形態に係る弾性膜10によれば、内側ゴム層111と外側ゴム層112との間に、それらよりも剛性の高い中間剛体層113が設けられていることにより、研磨ヘッド21との間に単一の密閉空間23を形成するものの、半導体ウエハWの研磨パッド22への圧接力を均一化することができる。これは、弾性膜10と研磨ヘッド21との間の単一の密閉空間23における圧力分布に従った弾性膜10の変形が高剛性の中間剛体層113により軽減され、半導体ウエハWの研磨パッド22への圧接力が均一化されるのであると考えられる。 According to the elastic film 10 according to the embodiment of the above configuration, the polishing head 21 is provided with an intermediate rigid body layer 113 having a higher rigidity than the inner rubber layer 111 and the outer rubber layer 112. Although a single closed space 23 is formed between the wafer and the wafer W, the pressure contact force of the semiconductor wafer W with the polishing pad 22 can be made uniform. This is because the deformation of the elastic film 10 according to the pressure distribution in the single closed space 23 between the elastic film 10 and the polishing head 21 is reduced by the high-rigidity intermediate rigid body layer 113, and the polishing pad 22 of the semiconductor wafer W. It is considered that the pressure contact force with the force is made uniform.

なお、上記実施形態では、弾性膜10が浅底の円形皿状に形成された構成としたが、特にこれに限定されるものではなく、例えば、弾性膜が筒状部及び環状部を有さない膜本体のみで構成されていてもよい。 In the above embodiment, the elastic membrane 10 is formed in a shallow circular dish shape, but the present invention is not particularly limited to this. For example, the elastic membrane has a tubular portion and an annular portion. It may be composed of only a non-membrane body.

本発明は、CMP装置の研磨ヘッドに取り付けられるウエハ保持用の弾性膜の技術分野について有用である。 The present invention is useful in the technical field of elastic films for holding wafers attached to the polishing head of a CMP apparatus.

10 弾性膜
11 膜本体
111 内側ゴム層
112 外側ゴム層
113 中間剛体層
12 筒状部
13 環状部
20 CMP装置
21 研磨ヘッド
22 研磨パッド
23 密閉空間
W 半導体ウエハ
10 Elastic film 11 Film body 111 Inner rubber layer 112 Outer rubber layer 113 Intermediate rigid body layer 12 Cylindrical part 13 Circular part 20 CMP device 21 Polishing head 22 Polishing pad 23 Sealed space W Semiconductor wafer

Claims (5)

CMP装置の研磨ヘッドに取り付けられて前記研磨ヘッドとの間に単一の密閉空間を形成するウエハ保持用の弾性膜であって、
研磨ヘッド取付側に設けられたゴム製の内側ゴム層と、
ウエハ保持側に設けられたゴム製の外側ゴム層と、
前記内側ゴム層と前記外側ゴム層との間に設けられ前記内側ゴム層及び前記外側ゴム層よりも剛性の高い材料で形成された中間剛体層と、
を備えた弾性膜。
An elastic film for holding a wafer, which is attached to the polishing head of a CMP apparatus and forms a single closed space between the polishing head and the polishing head.
The rubber inner rubber layer provided on the polishing head mounting side and
An outer rubber layer made of rubber provided on the wafer holding side,
An intermediate rigid body layer provided between the inner rubber layer and the outer rubber layer and formed of a material having a higher rigidity than the inner rubber layer and the outer rubber layer.
Elastic membrane with.
請求項1に記載された弾性膜において、
前記内側ゴム層及び前記外側ゴム層が同一の架橋ゴムで形成されている弾性膜。
In the elastic membrane according to claim 1,
An elastic film in which the inner rubber layer and the outer rubber layer are made of the same crosslinked rubber.
請求項1又は2に記載された弾性膜において、
前記中間剛体層が樹脂又は金属で形成されている弾性膜。
In the elastic membrane according to claim 1 or 2.
An elastic film in which the intermediate rigid body layer is made of resin or metal.
請求項1乃至3のいずれかに記載された弾性膜において、
前記中間剛体層が前記内側ゴム層及び前記外側ゴム層間に埋設されている弾性膜。
In the elastic membrane according to any one of claims 1 to 3.
An elastic film in which the intermediate rigid body layer is embedded between the inner rubber layer and the outer rubber layer.
請求項4に記載された弾性膜において、
前記中間剛体層の外側の前記内側ゴム層と前記外側ゴム層との結合部分の幅a及び弾性膜の厚さをtとしたとき、0.01t≦a≦10tである弾性膜。
In the elastic membrane according to claim 4,
An elastic film having 0.01t ≦ a ≦ 10t, where t is the width a of the joint portion between the inner rubber layer and the outer rubber layer outside the intermediate rigid body layer and the thickness of the elastic film.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013111717A (en) * 2011-11-30 2013-06-10 Ebara Corp Elastic membrane
JP2018182064A (en) * 2017-04-13 2018-11-15 三菱電線工業株式会社 Elastic film for holding wafer of cmp device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013111717A (en) * 2011-11-30 2013-06-10 Ebara Corp Elastic membrane
JP2018182064A (en) * 2017-04-13 2018-11-15 三菱電線工業株式会社 Elastic film for holding wafer of cmp device

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